Tesis sobre el tema "Films"
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Delavaud, Gilles. "Le film par le film : films documentaires et films didactiques pour l'enseignement du cinéma : analyses et propositions". Paris 3, 1992. http://www.theses.fr/1993PA030050.
Texto completoI. A study of didactic documentary films intended for the teaching of cinema. The analyses treat, in particular, certain of the author's own productions, which supplement the text of the thesis. Ii. A study of several fiction films termed "reflexive" : to what extent may these films be considered to be documentaires on themselves?
Carter-Hansen, Jill, University of Western Sydney y of Performance Fine Arts and Design Faculty. "Travelling light - with a case for discovery : the making of the film Songs of the Immigrant Bride". THESIS_FVPA_XXX_CarterHansen_J.xml, 1997. http://handle.uws.edu.au:8081/1959.7/680.
Texto completoMaster of Arts (Hons)
Nilsson, Kristian. "Film formation of latex in dry coating films". Thesis, Karlstad University, Faculty of Technology and Science, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-1048.
Texto completoThe objective of this master thesis was to investigate the possibility to measure the gain in stiffness of the dry coating due to film formation of latex with a Dynamic Mechanic Thermal Analyzer (DMTA). This could tell when and to which extent the latex forms a film after the drying process.
Two latices with different Tg was used for the experiments, one with a Tg of 36°C, denoted hard, and the one with a Tg of 8°C, denoted soft. The hard latex was used to make coating samples that would not form a film when dried at room temperature and the soft latex was used as a reference to the coating with hard latex since it would form a film at room temperature.
It was shown that a gain in stiffness due to film formation of latex in coating can be measured with a DMTA. It was also shown that that the film forming of latex in coatings depend on time, temperature and the history of the sample. Further investigations were carried out to try to determine the time for film formation to be completed at a certain temperature.. These investigations showed that this type of trials cannot be carried out in a DMTA directly since the stiffness seemed to increase monotonically during a very ling time. This might be due to the rearrangements in the pigment structure that might affect the gain in stiffness. Therefore, a method involving oven curing was developed. Only one series of test were performed with this method due to lack of time but the method showed promising results.
Syftet med detta examensarbete var att undersöka möjligheten att använda en Dynamic Mechanic Thermal Analyzer (DMTA) för att mäta ökningen av styvhet som följd av filmbildning av latex i en torr bestrykning.
Två olika latexer användes för experimenten, en med Tg = 36°C (hård) och en med Tg = 8°C (mjuk). Den hårda latexen användes för att kunna göra tester på prover som ännu inte filmbildat när de torkat vid rumstemperatur och den mjuka latexen användes för att göra referens prover mot bestrykningen med hård latex.
Resultaten visade att det går att mäta styvhetsökning i bestrykningen som en följd av filmformation med DMTA och filmformation av latex i bestrykningen troligtvis beror på både tid, temperatur och provets historia. Ett försök att mäta vilken uppehålls tid vid en specifik temperatur som krävs för att filmbildningen skall fulländas genomfördes. Dessa försök visade att DMTA:n inte var en lämplig metod för att mäta denna tid då styvheten verkade öka under en längre tid. Detta kan bero på att pigment partiklarna packade sig tätare och på så sätt orsakade en ökning av styvheten. Därför gjordes ett annat försök som involverar ugns härdning, men på grund av tidsbrist blev det bara en mätserie utförd. Den sist nämnda metoden visade dock goda resultat och måste därför bedömas ha en potential.
Poole, Mark William. "Film noir and the films of Christopher Nolan". Master's thesis, Universidade de Aveiro, 2004. http://hdl.handle.net/10773/16688.
Texto completoFilm noir has returned as a commercially attractive genre in the last ten years following the success of Pulp Fiction. This thesis discusses the differences of style and content and reasons for these differences between the present incarnation of film noir and its predecessors. As a director whose three feature films to date all contain noir elements, the work of Christopher Nolan is contextualized with that of his contemporaries while the purpose of his expression of these elements is also considered.
O Film Noir regressou como género comercialmente atraente nos últimos dez anos e na sequência do sucesso de Pulp Fiction. Nesta tese tentamos analisar as diferenças de estilo e de conteúdo, e as razões para estas diferenças entre a incarnação actual do Film Noir e a dos seus antecessores. Enquanto realizador cujos filmes até hoje apresentados contêm elementos de Film Noir, a obra de Christopher Nolan é contextualizada com a dos seus contemporâneos, ao mesmo tempo que se analisa igualmente o objectivo da expressão destes elementos.
Kohli, Gurdeep Singh. "Film or film brand? : investigating consumers' engagement with films as brands". Thesis, Brunel University, 2017. http://bura.brunel.ac.uk/handle/2438/16312.
Texto completoNie, Jing. "Contemporary Chinese Cinema: Fifth Generation films, urban films, and Sixth Generation films". Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1061419663.
Texto completoArteaga, Loïc. "Du non-film inexploré aux films à restaurer : l'apport des documents d'archives non-film dans les processus de restauration de films muets". Thesis, Sorbonne Paris Cité, 2016. http://www.theses.fr/2016USPCC291.
Texto completoDespite its recent re-lighting, silent cinema is still threatened by disappearance, notably because of nitrate film decomposition over time. It is estimated that 80 per cent of the world cinema production from 1895 to 1929 is currently lost, which makes silent film restoration even more crucial for those that still exist. Unfortunately, a century later, those films often remain in incomplete versions, sometimes even different from the original ones. This research work falls within this scope and specifically demonstrates the essential input of non-film archival documents of the time in silent film restoration processes. Those documents from now on represent the only sources attesting the original and complete form of those films. They notably allow, by comparing them with the incomplete films, both the identification of the preserved versions and the reconstruction of the narrative spine. This theoretical reflection on film restoration guiding principles [I] is then put into practice first through our examination of the restoration elements of the non-film archive collection of the American production company Triangle Film Corporation (1915-1919) preserved by the Cinémathèque française [II] then, based on the exploitation of these elements, through our contribution to the restorations of the French versions of the western The Desert Man (La Cité du désespoir, William S. Hart, 1917) and the historical drama The Despoiler (Châtiment, Reginald Barker, 1915) [III] ; two Triangle films so far presumed lost that constitute the only film elements located in the world until now
Bentley, Christina Mitchell. ""THAT'S JUST THE WAY WE LIKE IT": THE CHILDREN'S HORROR FILM IN THE 1980'S". Lexington, Ky. : [University of Kentucky Libraries], 2002. http://lib.uky.edu/ETD/ukyengl2002t00033/00cmbthe.pdf.
Texto completoTitle from document title page. Document formatted into pages; contains vii, 63 p. : ill. Includes film clips utilizing MPG files. Includes abstract. Includes bibliographical references (p. 60-62).
Reed, Amber Nicole. "Characterization of Inert Gas RF Plasma-Treated Indium Tin Oxide Thin Films Deposited Via Pulsed DC Magnetron Sputtering". Wright State University / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=wright1221763086.
Texto completoKim, Yumi. "Chasing the moon /". Online version of thesis, 2009. http://hdl.handle.net/1850/8691.
Texto completoMorales, Morales Oswaldo [UNESP]. "Construção e caracterização de células solares de filmes finos de CdS e CdTe". Universidade Estadual Paulista (UNESP), 2012. http://hdl.handle.net/11449/91965.
Texto completoCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Neste trabalho, o objeto de estudo foi células Solares CdS/CdTe. Estas células usam o filme de sulfeto de cádmio (CdS) como semicondutor do tipo n e o filme de telureto de cádmio (CdTe) como semicondutor do tipo p. O recorde mundial, alcançado no laboratório, para estas células é 16,5% de eficiência. Nos Laboratórios do Departamento de Física e Química de Unesp - Ilha Solteira, este trabalho é pioneiro na fabricação de Células Solares de CdS/CdTe. Para realizar este trabalho foi necessário melhorar o sistema de deposição por spray de SnO2:F já existente, acondicionar o sistema de banho químico para deposição do filme de CdS e implementar o sistema de sublimação para depositar a camada de CdTe. Todos estes sistemas de deposição de filmes finos foram implementados no laboratório do Grupo de Desenvolvimento e Aplicação de Materiais (GDAM). A fabricação da Célula Solar CdS/CdTe consistiu na deposição sequencial sobre vidro de a) Eletrodo condutor transparente utilizando óxido de estanho dopado com Flúor (SnO2:F) pelo método de spray, com controle automático de jato; b) deposição de sulfeto de Cádmio (CdS) pelo método de banho Químico (CBD); c) deposição de Telureto de Cádmio (CdTe) pela técnica de sublimação no espaço fechado (CSS) e d) deposição do contato metálico traseiro de prata por colocação de camada liquida e posteriormente a melhora deste contato com grafite-prata. A estrutura final destas células foi: Vidro/SnO2:F/CdS/CdTe/contato. A caracterização estrutural e óptica das camadas destas células foi realizada pelas técnicas de DRX e UV-vis; os parâmetros elétricos das células foram determinados pela construção da curva I-V. A camada CdTe da célula solar foi tratada termicamente com dicloreto de cádmio (CdCl2) para comparar a sua eficiência com outra célula que não foi tratada...
The object of this work was the study solar Cells CdS/CdTe. These cells use a cadmium sulfide film as an n-type semiconductor and a cadmium telluride film as a p- type semiconductor The world record for maximum efficiency achieved in laboratory for these cells is 16.5%. In laboratories of Departament of Physics and Chemistry of Unesp-Ilha Solteira, this work is a pioneer in the manufacture of CdS/CdTe Solar Cell. To carry out this work it was necessary to improve the existing system of Spray deposition of SnO2: F, conditioning of the system for chemical bath deposition of CdS film and manufacture the sublimation system to deposit the CdTe layer. All of these systems for the deposition of thin films were developed in the laboratory. The manufacture of CdS/CdTe solar cell consisted of sequential deposition on glass of a) transparent conductive tin oxide doped with fluorine (SnO 2:F) using automatic control system of the spray; b) deposition of cadmium sulfide (CdS) for method (CBD); c) deposition of cadmium telluride for technique in closed space sublimation (CSS) and d) the rear metallic contact of silver was deposited by placing the liquid layer and subsequent improvement of contact with graphite-silver. The final structure of cell used in this work was: glass/SnO2:F/CdS/CdTe/contact. The CdTe solar cell layer was heat treated with cadmium dichloride (CdCl2) to compare its efficiency with another cell that was not treated with cadmium dichloride. Then we investigated the performance of only putting back metal contact layer of silver of silver and silver-graphite layer, the latter was giving better results, achieving an efficiency is a well more than 5%
Gonçalves, Thaís Matiello [UNESP]. "Caracterização de filmes finos obtidos por deposição de vapor químico assistido a plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID)". Universidade Estadual Paulista (UNESP), 2012. http://hdl.handle.net/11449/99671.
Texto completoCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Filmes finos de carbono amorfo hidrogenado contendo silício e dopados com flúor foram produzudos pelos métodos de Deposição de Vapor Químico Assistido e Plasma (PECVD) e Deposição e Implantação Iônica por Imersão em Plasma (PIIID). Para PECVD foi utilizada uma pressão total de gases/vapor de 100 mTorr e inicialmente, 100W de potência de excitação. A proporção dos gases foi estudada, mantendo a concentração do hexametildisiloxano (HMDSO) em 75% e variando a proporção do argônio (Ar) e do hexafluoreto de enxofre (SF6). As porcentagens de flúor utilizadas na alimentação do plasma variaram em 0,6,9 e 12,5%. Visando maior concentração atômica de flúor na estrutura dos filmes, determinou-se a proporção de gases/vapor mais apropriada (75% HMDSO, 19% Ar e 6% SF6), e posteriormente, foi realizado um novo estudo da potência de excitação. Variando a potência entre 40 e 70 W, 50 W foi considerada como sendo a melhor condição de excitação para a descarga luminosa, considerando os efeitos causados pela corrosão relacionada ao flúor e a incorporação do elemento. Um estudo sobre as mesmas proporções foi realizada pela técnica de PIIID, com uma pressão total de 50 mTorr, potência de 50 W e pulsos negativos com magnitude de 800 V. Para este método o filme produzido com 12,5% de SF6 foi escolhido como sendo a melhor opção, tendo em vista que apresentou a maior quantidade atômica de flúor em sua estrutura. Posteriormente, a intensidade dos pulsos aplicados foi variada entre 544 e 14801 V, onde verificou-se que o aumento da intensidade dos pulsos resulta na diminuição da incorporação de flúor
Hydrogenated amorphous carbon films containing silicon and doped with fluorine were produced by two methods: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Deposition (PIIID). For PECVD a total pressure of 100 mTorr was used at a excitation power of 100 W. The gas/vapor proportion was studied, keeping 75% hexamethyldisiloxane and varying the argon (Ar) and sulfur hexafluoride (SF6) ratio. The following proportions of SF6) ratio. The following proportions of SF6 were examined: 0, 6, 9 and 12.5%. Aiming for the highest atomic concentration of fluorine in film structure the best condition (75% HMDSO, 19% Ar and 6% SF6) was determined and a new study of the influence of the radiofrequency power. Considering the corrosion effects gernerated by fluorine in the plasma, variation of the applied power between 40 and 70 W, allowed the selection of 50 W as the best conditions. A study employing the same proportior PIIID was performed using 50 mTorr of total pressure, an applied power of 50 W and a pulse bias of 800 V. Considering the results of the chemical characterizations, films were produced with 12.5% of SF6 in the plasma feed. Subsequently, bias voltage was varied between 544 and 1480 V, where it was observed that the increasing the pulse bias decreased the fluorine concentration in film structure
Silva, Vitor Diego Lima da [UNESP]. "Investigação de contatos elétricos e propriedades de filmes finos de SnO2 dopados com os íons terras raras Eu3+ e Ce3+". Universidade Estadual Paulista (UNESP), 2012. http://hdl.handle.net/11449/99676.
Texto completoCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
O objetivo principal deste trabalho é elucidar quais são os mecanismos de transporte de portadores de carga presentes na interface entre SnO2 e o contato metálico, pois tal conhecimento é fundamental para a aplicação na eletrônica. Além disso, é objetivo aqui também, estudar características de transporte em SnO2 dopado com alguns íons terras-raras. As amostras de SnO2 dopadas em Eu3+ e Ce3+ utilizadas nesta pesquisa foram sintetizadas a partir do método sol-gel e os filmes finos depositados pela técnica dip-coating. Os contatos estudados foram feitos a partir dos metais In, Sn e Al, depositados via evaporação resistiva. Medidas de resistência em função da temperatura nas amostras dopadas com Eu indicaram uma variação significativa da resistividade, de até 10 vezes, quando alterado o metal do contato. Isto se deve a diferença entre a função de trabalho de cada metal, que consequentemente acarreta em variação da barreira de potencial na junção metal-semicondutor. Pela característica das curvas de corrente medida em função da tensão aplicada, observou-se que os dois mecanismos de condução elétrica dominantes na interface são a emisssão termiônica, quando em baixas temperaturas e tensões de menor intensidade, e o tunelamento através da barreira, quando em temperaturas mais altas e tensões de maior intensidade. Com base nesses resultados e na aplicação do método proposto por Rhoderick estimou-se os valores da altura da barreira de potencial na junção metal-semicondutor, em 132 meV, 162 meV e 187 meV para os metais In, Al, Sn, respectivamente. Além disso, o tratamento térmico realizado nas amostras promoveu, de modo geral, a diminuição da resistividade do dispositivo devido, provavelmente, ao estreitamento da barreira de potencial e consequente aumento da...
The main goal of this work is the verification of electrical transport mechanisms of charge carriers at the interface between SnO2 and the metallic contact, because this knowledge is fundamental for electronic applications. Besides, another goal here is to investigate transport characteristics of rare-earth doped SnO2 samples doped with Eu3+ and Ce3+ used in this research were made from the sol-gel method and the thin films were deposited via dip-coating technique. The analyzed contacts were deposited from metals In, Sn and Al, via resistive evaporation technique. Resistance as function of temperature measurements applied to Eu-doped samples indicates a significant resistivity, up to 10 times, when the contact metal is varied. This is due to the differences in the work function of each metal, leading to variation in the potential barrier at interface of the metal-semiconductor junction. The characteristics of the current-voltage curves yield two dominant electrical mechanisms at the interface: thermo-ionic emission, for low temperatures and higher applied bias, and quantum tunneling through the barrier, when the temperature is higher and so is the applied bias magnitude. Based on these results and the application of the method proposed by Rhoderick, the potential barrier height of metal-semiconductor junction values were evaluated, yielding 132 meV, 162 meV and 187 meV for the metals In, Al and Sn, respectively. Besides, generally speaking, thermal annealing promotes the resistivity decrease, probably due to the potential barrier narrowing, increasing the tunneling probability. The variation of Ce3+ concentration, from 0,1% also leads to variation in the device resistivity, but this is not related to the potential at the junction interface, instead it is related with other bulk factors, as the charge... (Complete abstract click electronic access below)
Fernandes, Helmut Paulus Kleinsorgen Paes Ferreira. "Etnografias de si: a emergência dos filmes pessoais". Universidade do Estado do Rio de Janeiro, 2006. http://www.bdtd.uerj.br/tde_busca/arquivo.php?codArquivo=1026.
Texto completoAo enfocar o filme de família no contexto da produção pós-moderna, esta dissertação tem por intenção debater a questão da autenticidade, bem como o processo de legitimação cultural de sub-gêneros fílmicos afins surgidos na década de 60, como o filme diário e o filme pessoal. A proliferação deste tipo de produção uma espécie de meio-termo entre auto-etnografias e filmes de arte - desafia as ciências sociais e, mais especificamente, a antropologia visual contemporânea a compreender a emergência de novas formas audiovisuais de representação social. A partir do estudo pioneiro de Bourdieu sobre a função social da fotografia, debate-se a estetização do território familiar e a função social do filme amador.
Focusing on the home movies in the context of post-modern culture, this dissertation intends to debate the question of authenticity, as well as the process of cultural legitimation of filmic sub-genres originated in the sixties: the diary film and the personal film. The proliferation of this type of film production something in-between the autoethnographies and the art films challenges the social sciences and, more specifically, the contemporary visual anthropology to understand the appearance of new audiovisual forms of social representation. The important work of Bourdieu on the social rules of photography is a starting point to debate the aesthetics of private family domain and the social rules of amateur film
Suttle, Helene. "Thin film vapour barrier systems on vacuum-planarized polyester films". Thesis, University of Oxford, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555308.
Texto completoSmith, Justin T. "Cult films and film cults in British cinema 1968-86". Thesis, University of Portsmouth, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.429782.
Texto completoLathrop, Benjamin A. "Cult films and film cults : the evil dead to Titanic /". Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1090934488.
Texto completoHeiman, Christopher James. "LAKESIDE: AN INDEPENDENT STUDENT FILM". Kent State University Honors College / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ksuhonors1313072280.
Texto completoRen, Huilin. "Current Voltage Characteristics of a Semiconductor Metal Oxide Sensor". Fogler Library, University of Maine, 2001. http://www.library.umaine.edu/theses/pdf/RenH2001.pdf.
Texto completoJúnior, Antonio Riul. "Filmes de Langmuir e Langmuir-Blodgett de polianilina processada com ácidos funcionalizados". Universidade de São Paulo, 1995. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-08112013-151141/.
Texto completoLangmuir-Blodgett (LB) films were fabricated from parent polyaniline (PANI), which was made soluble in chloroform by being doped with functionalized acids. Optimized conditions for LB film deposition were only reached after a systematic processability study in which use was made of camphor sulfonic acid (CSA), dodecylbenzene sulfonic acid (DBSA), toluene sulfonic acid (TSA) and of N-methyl pyrrolidinone (NMP) and m-cresol as plasticizers. Solutions of high molecular weight PANI were spread on acidic, aqueous subphases (pH = 2), thus forming the so-called Langmuir monolayer. These monolayer were transferred onto solid substrates (bk7 glass) in the form of Z-type films, i.e. deposition was successful only in the upstrokes. This means that hydrophilic groups must protrude from the water surface in the Langmuir film. The LB films were characterized using UV-vis spectroscopy, cyclic voltammeter, surface potential and conductivity measurements. The optical and electroactive properties of the deposited LB films were essentially the same as those obtained with spin-coated PANI films. The absorbance of the polaronic peak increases linearly with the number of deposited layers, demonstrating that each layer contributed an equal amount of material to the LB film. The films conductivity was of the order of 10-4 S/cm, which is below the values of spin coated PANI films processed with CSA or DBSA, but higher than some published values for LB films from polyaniline
Dobiášová, Andrea. "Strukturní a transportní vlastnosti semi-IPN hydrogelů na bázi polyvinylalkoholu". Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2021. http://www.nusl.cz/ntk/nusl-449409.
Texto completoMagnani, Matthew Daniel. "Martin Scorsese, Quentin Tarantino, and the Crime Films of the Nineteen Nineties". Thesis, University of North Texas, 1996. https://digital.library.unt.edu/ark:/67531/metadc278623/.
Texto completoTorres, Bruno Bassi Millan. "Filmes finos do ácido poli 3-tiofeno acético". Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/88/88131/tde-26072012-115856/.
Texto completoPolythiophene acetic acid (PTAA) is a versatile polythiophene derivative. Its solubility in some organic solvents and in basic aqueous solutions makes it attractive for processing thin films, an important feature for the fabrication of devices and sensors. In this thesis, we investigate the formation of PTAA films using the layer-by-layer (LbL) and the Langmuir- Blodgett (LB) techniques. The LbL films were prepared with poly(allylamine hydrochloride) (PAH) and poly(diallydimethylammonium chloride) (PDAC), with film growth depending on the pH of the solutions and type of polycation, thus indicating that the growth mechanism depends on polymer-polymer interactions. The conformation of the PTAA molecules in solid state was correlated with that in solution, in a kind of memory effect. The surface energy of the films was not affected by the film architecture or different conformations. The film morphology was characterized with AFM images using concepts of fractal geometry and statistics. The fractal dimension was similar for all films, and therefore the overall growth obeys the same process regardless of the deposition conditions. Nevertheless, films obtained at acidic pH exhibited larger grain size and correlation lengths than those produced at basic pHs, suggesting deposition of more coiled chains. It was also possible to fabricate selfsustained films without apparent PTAA degradation from the PAH/PTAA LbL films, upon thermal crosslinking of carboxylic acid and amine groups. This is the first report of such films with a polythiophene derivative. LB films of PTAA were obtained without co-spreading materials, but the deposition conditions need to be optimized. To explore the high chemical affinity between PTAA and compounds containing sulfur and heavy metals, some films were used for spectroscopic and electrochemical detection. The UV-Vis and photoluminescence spectra indicated that the metals affect only the excited states, leading to fluorescence quenching after long exposure times and without specificity for the metals. The FTIR spectra pointed to salts in the films. Pb+2 and Hg+2 ions could be detected using cyclic voltammetry, but their simultaneous detection was hampered by the irreversibility of the electrochemical processes which caused broadening of the oxi-reduction peaks.
Constantino, Carlos José Leopoldo. "Filmes de Langmuir e Langmuir-Blodgett de ligninas". Universidade de São Paulo, 1995. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-18062008-083333/.
Texto completoLangmuir monolayers and Langmuir-Blodgett (LB) films were fabricated from lignins extracted from Pinus caribaea hondurensis and sugar cane bagasse using the organosolv processo Nine types of pinus lignins were obtained by employing different solvents. The lignins of sugar cane bagasse were extracted using only one solvent but the material was fractioned into six fractions according to the molecular sizes. The resulting lignins were then less polydisperse than the pinus lignins. Langmuir monolayers were spread onto ultrapure water subphases and characterized by surface pressure and surface potential measurements. In all cases, non-monomolecular aggregates are formed when the monolayer is compressed beyond the collapse pressure, which is denoted by large hysteresis in pressurearea isotherms. For the low molecular weight lignins, stable multilayer structures are formed even before collapse. In the less polydisperse bagasse lignins, the average area per molecule increases linearly with the molecular weight. Monolayers from both pinus and bagasse lignins could be transferred onto glass substrates, thus forming the first ever reported Langmuir-Blodgett (LB) films of these materials. By controlling the dipping speed one can build-up different types of LB film which can be y-type with deposition occurring in both upstrokes and downstrokes and also Z or x-type if transfer occurs only in the upstrokes or downstrokes, respectively. The deposited LB films were characterized by surface potential and ellipsometric measurements. The surface potential of pinus films is positive whereas that of bagasse lignins is negative. This sign inversion was surprising since the monolayer surface potentials were always positive for all materials, even though they were higher for the Pinus lignins. The reason for the inversion is the negative contribution of the film/substrate interface which surpass the small, positive contribution from the dipole moments in the bagasse lignins. The ellipsometric data showed that the lignin molecules assume a three-dimensional arrangement, even within a single layer. The LB film appears to be a highly porous structure, with a thickness of 60 Á per layer.
Tam, Dickson Tai Shun. "An investigation on effect of Mn-doping on dielectric property of barium strontium stannate titanate". access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21175135a.pdf.
Texto completoAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.
Yeung, Kwok Fai. "An investigation on effect of Mn-doping on dielectric property of barium strontium stannate titanate". access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21175317a.pdf.
Texto completoAt head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.
Wang, Dong. "Fatigue behavior of thin Cu films film thickness and interface effects /". Karlsruhe : Forschungszentrum Karlsruhe, 2007. http://d-nb.info/98578797X/34.
Texto completoHan, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors". Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.
Texto completoDanino, Regina. "Experimental film : Catholic and feminist readings of my films (2010-2016)". Thesis, University of Westminster, 2017. https://westminsterresearch.westminster.ac.uk/item/q32q8/experimental-film-catholic-and-feminist-readings-of-my-films-2010-2016.
Texto completoMcSweeney, Terence. "'Beyond the frame' : the films and film theory of Andrei Tarkovsky". Thesis, University of Essex, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502183.
Texto completoCrudden, Eamon Gerard. "Mob films/ hybrid spaces : autodocumentary film and the anti-globalization movement". Thesis, Queen's University Belfast, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534710.
Texto completoAl-Ati, Tareq. "Oxygen permeation of virgin HDPE films versus recycled HDPE films /". Online version of thesis, 1994. http://hdl.handle.net/1850/11875.
Texto completoZANONI, RAYMOND. "BRILLOUIN SPECTROSCOPY OF LANGMUIR-BLODGETT FILMS (THIN FILMS, ELASTIC CONSTANTS)". Diss., The University of Arizona, 1986. http://hdl.handle.net/10150/183852.
Texto completoBiasotto, Glenda [UNESP]. "Síntese e caracterização de nanoestruturas e filmes finos de 'BI' 'FE' 'OIND.3' modificado com samário visando aplicação em memórias de múltiplos estados". Universidade Estadual Paulista (UNESP), 2010. http://hdl.handle.net/11449/92062.
Texto completoCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
O termo multiferróico (ou ferroeletromagnético) é utilizado para descrever materiais que apresentam duas ou mais das propriedades ferróicas primárias (ferroeletricidade, ferromagnetismo ou ferroelasticidade) ocorrendo na mesma fase. Tais materiais são conhecidos desde a década de 60, entretanto, sua potencial aplicação no armazenamento de informações tem despertado grande interesse da comunidade cientifica nos últimos anos. O BiFeO3 tem recebido especial atenção devido à coexistência de propriedades ferroelétricas e magnéticas. Devido a este acoplamento novas possibilidades de armazenamento de dados, em elementos de memória ferroelétrica, podem ser criadas de forma não destrutiva. Este material proporciona uma alternativa para substituição de compostos ferroelétricos e piezelétricos livres de chumbo, sendo ambientalmente favorável. A ferrita de bismuto é um dos candidatos, por ser um material ferroelétrico com temperatura de Curie (TC) relativamente alta 1000 K e por exibir comportamento antiferromagnético com temperatura de Neel (TN) 643 K. Estas características fazem com que este material apresente um grande valor de polarização espontânea Ps. Nessa linha de estudo, a pesquisa buscou obter filmes finos e nanoestruturas de BiFeO3 puro e dopado com Sm. Os filmes finos foram depositados sobre substrato de Pt/TiO2/SiO2/Si utilizando spin coating e solução precursora preparada pelo método dos precursores poliméricos, tratados a 500oC por 2h. Os difratogramas de raios X (DRX) e a microscopia de força atômica (AFM) mostraram que os filmes não apresentam fase secundária, a microestrutura tem tamanho de grão homogêneo e distribuição uniforme na superfície. A histerese ferroelétrica dos filmes de BFO puro, apresentaram valores de (Pr) 2,93 C/cm2 e campo coercitivo...
The term multiferroic (or ferroeletromagnetic) is used to describe materials that have two or more properties ferroic primary (ferroelectricity, ferromagnetism or ferroelasticity) occurring at the same phase. This kind of materials are known since the 60's, however, its potential application in the information store has been much interest from the scientific community in recent years. The BiFeO3 has received special attention due to the coexistence of ferroelectric and magnetic properties. Because of this coupling new possibilities for data storage in ferroelectric memory elements can be created in a non-destructive. This material provides an alternative replacement for ferroelectric and piezoelectric compounds of lead-free and environmentally excellent. The bismuth ferrite is a candidate for being a ferroelectric material with high Curie temperature (Tc) 1000 K and exhibit antiferromagnetic behavior with Neel temperature (TN). These characteristics make this material presents a large value of spontaneous polarization Ps. In this line of study, the research sought to obtain thin films and nanostructures BiFeO3 pure and doped with Sm. The thin films were deposited on Pt/TiO2/SiO2/Si substrates using spin coating and precursor solution prepared by the polymeric precursors treated at 500oC for 2 hours. The X-ray diffraction (XRD) and atomic force microscopy (AFM) showed that the films do not exhibit secondary phase, the microstructure is homogeneous grain size and uniform distribution on the surface. The hysteresis of films BFO pure showed values of (Pr) 2.93 C/cm2 and coercive field (Ec) of 7.4 kV / cm for an applied electric field of 15 kV / cm. The doped with samarium showed an increase in the value of remanent polarization with increasing dopant concentration. The BFO nanostructures and doped with... (Complete abstract click electronic access below)
Morales, Morales Oswaldo. "Construção e caracterização de células solares de filmes finos de CdS e CdTe /". Ilha Solteira : [s.n.], 2012. http://hdl.handle.net/11449/91965.
Texto completoCoorientador: Victor Ciro Solano Reynoso
Banca: José Humberto Dias da Silva
Banca: Norberto Luiz Amsei Júnior
Resumo: Neste trabalho, o objeto de estudo foi células Solares CdS/CdTe. Estas células usam o filme de sulfeto de cádmio (CdS) como semicondutor do tipo n e o filme de telureto de cádmio (CdTe) como semicondutor do tipo p. O recorde mundial, alcançado no laboratório, para estas células é 16,5% de eficiência. Nos Laboratórios do Departamento de Física e Química de Unesp - Ilha Solteira, este trabalho é pioneiro na fabricação de Células Solares de CdS/CdTe. Para realizar este trabalho foi necessário melhorar o sistema de deposição por spray de SnO2:F já existente, acondicionar o sistema de banho químico para deposição do filme de CdS e implementar o sistema de sublimação para depositar a camada de CdTe. Todos estes sistemas de deposição de filmes finos foram implementados no laboratório do Grupo de Desenvolvimento e Aplicação de Materiais (GDAM). A fabricação da Célula Solar CdS/CdTe consistiu na deposição sequencial sobre vidro de a) Eletrodo condutor transparente utilizando óxido de estanho dopado com Flúor (SnO2:F) pelo método de spray, com controle automático de jato; b) deposição de sulfeto de Cádmio (CdS) pelo método de banho Químico (CBD); c) deposição de Telureto de Cádmio (CdTe) pela técnica de sublimação no espaço fechado (CSS) e d) deposição do contato metálico traseiro de prata por colocação de camada liquida e posteriormente a melhora deste contato com grafite-prata. A estrutura final destas células foi: Vidro/SnO2:F/CdS/CdTe/contato. A caracterização estrutural e óptica das camadas destas células foi realizada pelas técnicas de DRX e UV-vis; os parâmetros elétricos das células foram determinados pela construção da curva I-V. A camada CdTe da célula solar foi tratada termicamente com dicloreto de cádmio (CdCl2) para comparar a sua eficiência com outra célula que não foi tratada... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The object of this work was the study solar Cells CdS/CdTe. These cells use a cadmium sulfide film as an n-type semiconductor and a cadmium telluride film as a p- type semiconductor The world record for maximum efficiency achieved in laboratory for these cells is 16.5%. In laboratories of Departament of Physics and Chemistry of Unesp-Ilha Solteira, this work is a pioneer in the manufacture of CdS/CdTe Solar Cell. To carry out this work it was necessary to improve the existing system of Spray deposition of SnO2: F, conditioning of the system for chemical bath deposition of CdS film and manufacture the sublimation system to deposit the CdTe layer. All of these systems for the deposition of thin films were developed in the laboratory. The manufacture of CdS/CdTe solar cell consisted of sequential deposition on glass of a) transparent conductive tin oxide doped with fluorine (SnO 2:F) using automatic control system of the spray; b) deposition of cadmium sulfide (CdS) for method (CBD); c) deposition of cadmium telluride for technique in closed space sublimation (CSS) and d) the rear metallic contact of silver was deposited by placing the liquid layer and subsequent improvement of contact with graphite-silver. The final structure of cell used in this work was: glass/SnO2:F/CdS/CdTe/contact. The CdTe solar cell layer was heat treated with cadmium dichloride (CdCl2) to compare its efficiency with another cell that was not treated with cadmium dichloride. Then we investigated the performance of only putting back metal contact layer of silver of silver and silver-graphite layer, the latter was giving better results, achieving an efficiency is a well more than 5%
Mestre
Gonçalves, Thaís Matiello. "Caracterização de filmes finos obtidos por deposição de vapor químico assistido a plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID) /". Sorocaba, 2012. http://hdl.handle.net/11449/99671.
Texto completoBanca: José Humberto da Silva
Banca: Douglas S. Galvão
O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi
Resumo: Filmes finos de carbono amorfo hidrogenado contendo silício e dopados com flúor foram produzudos pelos métodos de Deposição de Vapor Químico Assistido e Plasma (PECVD) e Deposição e Implantação Iônica por Imersão em Plasma (PIIID). Para PECVD foi utilizada uma pressão total de gases/vapor de 100 mTorr e inicialmente, 100W de potência de excitação. A proporção dos gases foi estudada, mantendo a concentração do hexametildisiloxano (HMDSO) em 75% e variando a proporção do argônio (Ar) e do hexafluoreto de enxofre (SF6). As porcentagens de flúor utilizadas na alimentação do plasma variaram em 0,6,9 e 12,5%. Visando maior concentração atômica de flúor na estrutura dos filmes, determinou-se a proporção de gases/vapor mais apropriada (75% HMDSO, 19% Ar e 6% SF6), e posteriormente, foi realizado um novo estudo da potência de excitação. Variando a potência entre 40 e 70 W, 50 W foi considerada como sendo a melhor condição de excitação para a descarga luminosa, considerando os efeitos causados pela corrosão relacionada ao flúor e a incorporação do elemento. Um estudo sobre as mesmas proporções foi realizada pela técnica de PIIID, com uma pressão total de 50 mTorr, potência de 50 W e pulsos negativos com magnitude de 800 V. Para este método o filme produzido com 12,5% de SF6 foi escolhido como sendo a melhor opção, tendo em vista que apresentou a maior quantidade atômica de flúor em sua estrutura. Posteriormente, a intensidade dos pulsos aplicados foi variada entre 544 e 14801 V, onde verificou-se que o aumento da intensidade dos pulsos resulta na diminuição da incorporação de flúor
Abstract: Hydrogenated amorphous carbon films containing silicon and doped with fluorine were produced by two methods: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Deposition (PIIID). For PECVD a total pressure of 100 mTorr was used at a excitation power of 100 W. The gas/vapor proportion was studied, keeping 75% hexamethyldisiloxane and varying the argon (Ar) and sulfur hexafluoride (SF6) ratio. The following proportions of SF6) ratio. The following proportions of SF6 were examined: 0, 6, 9 and 12.5%. Aiming for the highest atomic concentration of fluorine in film structure the best condition (75% HMDSO, 19% Ar and 6% SF6) was determined and a new study of the influence of the radiofrequency power. Considering the corrosion effects gernerated by fluorine in the plasma, variation of the applied power between 40 and 70 W, allowed the selection of 50 W as the best conditions. A study employing the same proportior PIIID was performed using 50 mTorr of total pressure, an applied power of 50 W and a pulse bias of 800 V. Considering the results of the chemical characterizations, films were produced with 12.5% of SF6 in the plasma feed. Subsequently, bias voltage was varied between 544 and 1480 V, where it was observed that the increasing the pulse bias decreased the fluorine concentration in film structure
Mestre
Biasotto, Glenda. "Síntese e caracterização de nanoestruturas e filmes finos de 'BI' 'FE' 'OIND.3' modificado com samário visando aplicação em memórias de múltiplos estados /". Araraquara : [s.n.], 2010. http://hdl.handle.net/11449/92062.
Texto completoBanca: Laudemir Carlos Varanda
Banca: Talita Mazon Anselmo
Resumo: O termo multiferróico (ou ferroeletromagnético) é utilizado para descrever materiais que apresentam duas ou mais das propriedades ferróicas primárias (ferroeletricidade, ferromagnetismo ou ferroelasticidade) ocorrendo na mesma fase. Tais materiais são conhecidos desde a década de 60, entretanto, sua potencial aplicação no armazenamento de informações tem despertado grande interesse da comunidade cientifica nos últimos anos. O BiFeO3 tem recebido especial atenção devido à coexistência de propriedades ferroelétricas e magnéticas. Devido a este acoplamento novas possibilidades de armazenamento de dados, em elementos de memória ferroelétrica, podem ser criadas de forma não destrutiva. Este material proporciona uma alternativa para substituição de compostos ferroelétricos e piezelétricos livres de chumbo, sendo ambientalmente favorável. A ferrita de bismuto é um dos candidatos, por ser um material ferroelétrico com temperatura de Curie (TC) relativamente alta 1000 K e por exibir comportamento antiferromagnético com temperatura de Neel (TN) 643 K. Estas características fazem com que este material apresente um grande valor de polarização espontânea Ps. Nessa linha de estudo, a pesquisa buscou obter filmes finos e nanoestruturas de BiFeO3 puro e dopado com Sm. Os filmes finos foram depositados sobre substrato de Pt/TiO2/SiO2/Si utilizando spin coating e solução precursora preparada pelo método dos precursores poliméricos, tratados a 500oC por 2h. Os difratogramas de raios X (DRX) e a microscopia de força atômica (AFM) mostraram que os filmes não apresentam fase secundária, a microestrutura tem tamanho de grão homogêneo e distribuição uniforme na superfície. A histerese ferroelétrica dos filmes de BFO puro, apresentaram valores de (Pr) 2,93 C/cm2 e campo coercitivo... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The term multiferroic (or ferroeletromagnetic) is used to describe materials that have two or more properties ferroic primary (ferroelectricity, ferromagnetism or ferroelasticity) occurring at the same phase. This kind of materials are known since the 60's, however, its potential application in the information store has been much interest from the scientific community in recent years. The BiFeO3 has received special attention due to the coexistence of ferroelectric and magnetic properties. Because of this coupling new possibilities for data storage in ferroelectric memory elements can be created in a non-destructive. This material provides an alternative replacement for ferroelectric and piezoelectric compounds of lead-free and environmentally excellent. The bismuth ferrite is a candidate for being a ferroelectric material with high Curie temperature (Tc) 1000 K and exhibit antiferromagnetic behavior with Neel temperature (TN). These characteristics make this material presents a large value of spontaneous polarization Ps. In this line of study, the research sought to obtain thin films and nanostructures BiFeO3 pure and doped with Sm. The thin films were deposited on Pt/TiO2/SiO2/Si substrates using spin coating and precursor solution prepared by the polymeric precursors treated at 500oC for 2 hours. The X-ray diffraction (XRD) and atomic force microscopy (AFM) showed that the films do not exhibit secondary phase, the microstructure is homogeneous grain size and uniform distribution on the surface. The hysteresis of films BFO pure showed values of (Pr) 2.93 C/cm2 and coercive field (Ec) of 7.4 kV / cm for an applied electric field of 15 kV / cm. The doped with samarium showed an increase in the value of remanent polarization with increasing dopant concentration. The BFO nanostructures and doped with... (Complete abstract click electronic access below)
Mestre
Silva, Vitor Diego Lima da. "Investigação de contatos elétricos e propriedades de filmes finos de SnO2 dopados com os íons terras raras Eu3+ e Ce3+ /". Bauru : [s.n.], 2012. http://hdl.handle.net/11449/99676.
Texto completoBanca: José Antonio Malmonge
Banca: Maximo Siu Li
O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi
Resumo: O objetivo principal deste trabalho é elucidar quais são os mecanismos de transporte de portadores de carga presentes na interface entre SnO2 e o contato metálico, pois tal conhecimento é fundamental para a aplicação na eletrônica. Além disso, é objetivo aqui também, estudar características de transporte em SnO2 dopado com alguns íons terras-raras. As amostras de SnO2 dopadas em Eu3+ e Ce3+ utilizadas nesta pesquisa foram sintetizadas a partir do método sol-gel e os filmes finos depositados pela técnica "dip-coating". Os contatos estudados foram feitos a partir dos metais In, Sn e Al, depositados via evaporação resistiva. Medidas de resistência em função da temperatura nas amostras dopadas com Eu indicaram uma variação significativa da resistividade, de até 10 vezes, quando alterado o metal do contato. Isto se deve a diferença entre a função de trabalho de cada metal, que consequentemente acarreta em variação da barreira de potencial na junção metal-semicondutor. Pela característica das curvas de corrente medida em função da tensão aplicada, observou-se que os dois mecanismos de condução elétrica dominantes na interface são a emisssão termiônica, quando em baixas temperaturas e tensões de menor intensidade, e o tunelamento através da barreira, quando em temperaturas mais altas e tensões de maior intensidade. Com base nesses resultados e na aplicação do método proposto por Rhoderick estimou-se os valores da altura da barreira de potencial na junção metal-semicondutor, em 132 meV, 162 meV e 187 meV para os metais In, Al, Sn, respectivamente. Além disso, o tratamento térmico realizado nas amostras promoveu, de modo geral, a diminuição da resistividade do dispositivo devido, provavelmente, ao estreitamento da barreira de potencial e consequente aumento da... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The main goal of this work is the verification of electrical transport mechanisms of charge carriers at the interface between SnO2 and the metallic contact, because this knowledge is fundamental for electronic applications. Besides, another goal here is to investigate transport characteristics of rare-earth doped SnO2 samples doped with Eu3+ and Ce3+ used in this research were made from the sol-gel method and the thin films were deposited via dip-coating technique. The analyzed contacts were deposited from metals In, Sn and Al, via resistive evaporation technique. Resistance as function of temperature measurements applied to Eu-doped samples indicates a significant resistivity, up to 10 times, when the contact metal is varied. This is due to the differences in the work function of each metal, leading to variation in the potential barrier at interface of the metal-semiconductor junction. The characteristics of the current-voltage curves yield two dominant electrical mechanisms at the interface: thermo-ionic emission, for low temperatures and higher applied bias, and quantum tunneling through the barrier, when the temperature is higher and so is the applied bias magnitude. Based on these results and the application of the method proposed by Rhoderick, the potential barrier height of metal-semiconductor junction values were evaluated, yielding 132 meV, 162 meV and 187 meV for the metals In, Al and Sn, respectively. Besides, generally speaking, thermal annealing promotes the resistivity decrease, probably due to the potential barrier narrowing, increasing the tunneling probability. The variation of Ce3+ concentration, from 0,1% also leads to variation in the device resistivity, but this is not related to the potential at the junction interface, instead it is related with other bulk factors, as the charge... (Complete abstract click electronic access below)
Mestre
Hauka, David Phillip. "Eschato-horror films". Thesis, University of British Columbia, 2014. http://hdl.handle.net/2429/50296.
Texto completoArts, Faculty of
Theatre and Film, Department of
Graduate
Wilkes, David John Hyde. "Optical polymer films". Thesis, University of Oxford, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534194.
Texto completoWarner, Mark Robert Edward. "Surfactant driven films". Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.415666.
Texto completoPennington, S. V. "Draining liquid films". Thesis, University of Liverpool, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291726.
Texto completoCordeiro, Cláudia Maria dos Santos. "Desenvolvimento de filmes bioactivos a partir do quitosano". Master's thesis, ISA, 2010. http://hdl.handle.net/10400.5/3141.
Texto completoAn experimental design to obtain films from chitosan was elaborated with the incorporation of crosslinker (ethylene glycol diglycidylether), nisin and glycerol. The independent variables were chitosan concentration (0,7-2,3%), acetic acid concentration (0,3-3%) and molar ratio of crosslinking/polymer (0-4). Although there was a significant effect of the single independent variables on the films properties determined throughout the study, no interaction between them was noticed. Chitosan and gelatin blend films were also produced with different proportions, as well as bi-layered films. The rheology of the filmogenic solutions showed that crosslinking only takes place during film formation, and not when the crosslinking agent was added to the solution. We observed that the value of the storage and loss modulus as well as the viscosity, increased with concentration of chitosan. The films obtained were very hydrophilic. Even though the values were relatively high, there was less water absorption capacity and solubility in water and in acid, for central values of molar ratio crosslinker/polymer. Regarding the mechanical properties of the films, the tensile strength was positively affected by the decrease of pH and the increase of molar ratio crosslinker/polymer, whereas, the elongation at rupture was only affected by the chitosan concentration. As expected, the higher the proportion of chitosan on blend and bi-layer films the closer they resembled the straight for waned chitosan films in what mechanical behavior is concerned
Kashani, Mohammad Mansour Riahi. "Formulation, development, and characterization of magnetic pastes and epoxies for thick film inductors". Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-10042006-143843/.
Texto completoGarg, Akhilesh. "Organic Self-Assembled Films for Nonlinear Optics: Film Structure, Composition and Kinetics of Film Formation". Diss., Virginia Tech, 2008. http://hdl.handle.net/10919/28872.
Texto completoPh. D.
Cao, Yuan. "Thin Cr2O3 (0001) Films and Co (0001) Films Fabrication for Spintronics". Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc822733/.
Texto completoRyan, Mark David. "A dark new world : anatomy of Australian horror films". Thesis, Queensland University of Technology, 2008. https://eprints.qut.edu.au/18351/1/Thesis.pdf.
Texto completoRyan, Mark David. "A dark new world : anatomy of Australian horror films". Queensland University of Technology, 2008. http://eprints.qut.edu.au/18351/.
Texto completoHorst, Stephen Jonathan. "Low cost fabrication techniques for embedded resistors on flexible organics at millimeter wave frequencies". Thesis, Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-11162006-171058/.
Texto completoDr. John Cressler, Committee Member ; Dr. John Papapolymerou, Committee Chair ; Dr. Manos Tentzeris, Committee Member.
Mackay, Ian. "Thin film electroluminescence /". Online version of thesis, 1989. http://hdl.handle.net/1850/10551.
Texto completo