Tesis sobre el tema "Field-effect doping"
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Nukala, Prathyusha. "Development of Silicon Nanowire Field Effect Transistors". Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103364/.
Texto completoLiu, Shiyi. "Understanding Doped Organic Field-Effect Transistors". Kent State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301.
Texto completoRandell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.
Texto completoPeriwal, Priyanka. "VLS growth and characterization of axial Si-SiGe heterostructured nanowire for tunnel field effect transistors". Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT045.
Texto completoAfter more than 30 years of successful scaling of MOSFET for increasing the performance and packing density, several limitations to further performance enhancements are now arising, power dissipation is one of the most important one. As scaling continues, there is a need to develop alternative devices with subthreshold slope below 60 mV/decade. In particular, tunnel field effect transistors, where the carriers are injected by quantum band to band tunneling mechanism can be promising candidate for low-power design. But, such devices require the implementation of peculiar architectures like axial heterostructured nanowires with abrupt interface. Using Au catalyzed vapor-liquid-solid synthesis of nanowires, reservoir effect restrains the formation of sharp junctions. In this context, this thesis addresses the growth of axial Si and Si1-xGex heterostructured nanowire with controlled interfacial abruptness and controlled doping using Au catalyzed VLS growth by RP-CVD. Firstly, we identify the growth conditions to realize sharp Si/Si1-xGex and Si1-xGex/Si interfacial abruptness. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter or growth conditions. Secondly, we study the problematics involved by the addition of dopant atoms and focus on the different approaches to realize taper free NWs. We discuss the influence of growth parameters (gas fluxes (Si or Ge), dopant ratio and pressure) on NW morphology and carrier concentration. With our growth process, we could successfully grow p-I, n-I, p-n, p-i-n type junctions in NWs. Thirdly, we present scanning probe microscopy to be a potential tool to delineate doped and hetero junctions in these as-grown nanowires. Finally, we will integrate the p-i-n junction in the NW in omega gate configuration
Sundararajan, Abhishek. "A STUDY ON ATOMICALLY THIN ULTRA SHORT CONDUCTING CHANNELS, BREAKDOWN, AND ENVIRONMENTAL EFFECTS". UKnowledge, 2015. http://uknowledge.uky.edu/physastron_etds/27.
Texto completoKrishnan, Bharat. "DEVELOPMENT OF SIMULATION FRAMEWORK FOR THE ANALYSIS OF NON-IDEAL EFFECTS IN DOPING PROFILE MEASUREMENT USING CAPACITANCE ? VOLTAGE TECHNIQUE". MSSTATE, 2005. http://sun.library.msstate.edu/ETD-db/theses/available/etd-04082005-092339/.
Texto completoShin, Nara [Verfasser], Karl [Gutachter] Leo, Stefan [Gutachter] Mannsfeld y Sebastian [Gutachter] Reineke. "Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes / Nara Shin ; Gutachter: Karl Leo, Stefan Mannsfeld, Sebastian Reineke". Dresden : Technische Universität Dresden, 2019. http://d-nb.info/1230578196/34.
Texto completoYoo, Kyung-Dong. "Two-dimensional dopant profiling for shallow junctions by TEM and AFM". Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342122.
Texto completoWinkler, Felix [Verfasser], Johann W. [Gutachter] Bartha y Christian [Gutachter] Wenger. "Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System / Felix Winkler ; Gutachter: Johann W. Bartha, Christian Wenger". Dresden : Technische Universität Dresden, 2020. http://d-nb.info/122731227X/34.
Texto completoWehrfritz, Peter. "Herstellung und Charakterisierung von Feldeffekttransistoren mit epitaktischem Graphen". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-172853.
Texto completoIngram, Ian David Victor. "New materials and processes for flexible nanoelectronics". Thesis, University of Manchester, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.588129.
Texto completoKleemann, Hans. "Organic Electronic Devices - Fundamentals, Applications, and Novel Concepts". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-105059.
Texto completoProcházka, Pavel. "Příprava grafenu a výzkum jeho fyzikálních vlastností". Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-371775.
Texto completoChicot, Gauthier. "Effet de champs dans le diamant dopé au bore". Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01062250.
Texto completoOgier, Jean-Luc. "Optimisation de structures et de technologies pour la réalisation de drain-source de transistors MOS submicroniques". Université Joseph Fourier (Grenoble), 1993. http://www.theses.fr/1993GRE10167.
Texto completoHamidi, Sakr Amer. "Thin films of polythiophenes oriented by epitaxy and high-temperature rubbing : correlations with optical, charge-transport and thermoelectrical properties". Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAE019.
Texto completoThe aim of this thesis is to study the effect of alignment and morphological control on polythiophene thin films and to correlate this control with the optical, charge transport and thermoelectric properties. Since semiconducting polymers are inherently anisotropic by nature, studying these polymers in the aligned state was essential to understand their properties. This study could be achieved by employing two techniques that are successful in orienting polymers in thin films. High-temperature rubbing (HTR) along with directional epitaxial crystallization (DEC) produced highly oriented polythiophene thin films with order parameters reaching 0.87 and crystallinities up to 65%. HTR was a successful method to control crystal sizes in rubbed poly(3-hexyl-thiophene) P3HT films. By this method, the equilibrium melting temperatures of other poly(3-alkyl-thiophene) P3ATs were calculated. We learned that the free excitonic bandwidth depends on the crystal dimensions in the rubbed thin films. We also learned that the planarity of tie-chains linking consecutive crystalline domains plays a very important role in field-effect mobility. We also discuss the peculiar morphology of poly(3-butyl-thiophene) (P3BT) and the role of the butyl side groups. Then DEC method was proposed to orient poly(3-dioctylphenyl-thiophene) (PDOPT) thin films. We examined the effect of molecular weight of PDOPT on the level of crystallinity and alignment. Consequently, this relation provided fundamental information that helped us refine the crystal structure of PDOPT. Finally, a versatile method to produce highly aligned conducting polymers was proposed. HTR followed by P-type doping proved to be an excellent way to produce highly aligned conducting thin films with enhanced thermoelectric properties. This thesis brings value to the importance of morphology control and the alignment of semiconducting thin films to understand the various properties of these highly anisotropic systems
Fromm, Felix Jonathan. "Raman-Spektroskopie an epitaktischem Graphen auf Siliziumkarbid (0001)". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-165167.
Texto completoFiori, Alexandre. "Nouvelles générations de structures en diamant dopé au bore par technique de delta-dopage pour l'électronique de puissance : croissance par CVD et caractérisation". Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00967208.
Texto completoNdoye, Coumba. "Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures". Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/46321.
Texto completoMaster of Science
Kondratenko, Kirill. "Structural and charge transporting properties of pure liquid crystalline organic semiconductors and composites for applications in organic electronics". Thesis, Littoral, 2019. http://www.theses.fr/2019DUNK0536.
Texto completoThis thesis is dedicated to various aspects of liquid crystalline (LC) organic semiconductors (OSCs) in regard to their applications in the field of organic electronics. The first part of this work deals with a well-known LC OSC based on phenyl-naphtalene. Two major ways of performance improvement are proposed and investigated : stabilization of LC structure by in situ photo-polymerization and introduction of electron acceptor doping impurity. In the first case, the influence of polymer network on mesophase order and charge transport is investigated by conventional experimental techniques and Time-Of-Flight (TOF) mobility measurements. Fot the doped materials, ab initio calculations are employed to predict their spectroscopic properties which is exhaustively compared with the experimental data obtained by optical and vibrational spectroscopy. The charge transport is studied by TOF method in the mesophase, while crystalline phase is investigated via conductive atomic force microscopy. A prototype of organic field effect transistor (OFET) is prepared to obtain an estimate of performance for a relevant real-world application. The second part of this work includes design and synthesis of a novel LC semiconductor based on anthracene, additional attention is made to obtain an easy-to-make and low production cost material. Noval molecule is fully characterized : molecular structure is confirmed by relevant techniques ; frontier molecular energy levels are studied by optical spectroscopy and cyclic voltammetry and confronted to values obtaines via ab initio calculations ; mesophase properties are investigated by optical microscopy and scanning calorimetry. charge transporting properties are characterized by means of an OFET device : it is found that new anthracene-molecule exhibits significant improvement of field-effect hole mobility over previously studied phenyl naphtalene derivative. Finally, photoconductive properties of the novel material are addressed in order to investigate its potential applications to organic phototransistors
Tocci, Gabriele. "Performance estimation and Variability from Random Dopant Fluctuations in Multi-Gate Field Effect Transistors : a Simulation Study". Thesis, KTH, Integrerade komponenter och kretsar, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-93419.
Texto completoGILLMANN, GILBERT. "Dopage plan silicium dans l'arseniure de gallium". Paris 6, 1988. http://www.theses.fr/1988PA066256.
Texto completoRavichandran, Karthik. "Nano-scale process and device simulation". Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1125340288.
Texto completoLudemann, Michael. "In situ Raman-Spektroskopie an Metallphthalocyaninen: Von ultradünnen Schichten zum organischen Feldeffekttransistor". Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-206568.
Texto completoLin, Tzer Min y 林澤民. "Graded Multi-delta Doping Field Effect Transistor". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/62058468005186454091.
Texto completoChen, Jenq-Shyan y 陳政賢. "Investigation of InGaP/GaAs δ-doping Camel-Gate Field-Effect Transistors". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/19403957016661292797.
Texto completo國立高雄師範大學
物理學系
91
In this article, a new δ-doping field-effect transistor utilizing an InGaP/GaAs camel-gate structure was fabricated and demonstrated. In this device, a low doped GaAs layer together with an n+-GaAs and an ultra-thin p+-InGaP layers form a high-barrier camel gate structure. The device employments of n+-GaAs/p+-InGaP/n-GaAs heterostructure gate and the δ-doping channel with heavy-doping level were used to improve transconductance linearity and enhance current drivability. For a 1 x 100 μm2 device, the experiment results show a drain saturation current of 112 mA, a maximum transconductance of 240 mS/mm, and a large VGS swing larger than 3.5 V with the transconductance higher than 200 mS/mm. The measured breakdown voltage is about 33 V. In addition, the measured unity current gain frequency ƒt is 22 GHz. Besides, an analytical model related to drain saturation current, transcondutance, potiential barrier height, gate-to-source depletion capacitance, and unity current gain frequency is developed to discuss the device performances. On the other hand, the simple analytical model related to drain I-V characteristic is also established. We also find that the experimental results are consistent with theoretical analysis.
Lin, K. W. y 林坤緯. "Investigation of InGaP/InGaAs/GaAs Step-Compositioned Doping-Channel Field-Effect Transistor". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/26060909650930207025.
Texto completo國立成功大學
電機工程學系
85
In this thesis, we propose a novel structure of In0.49 Ga0.51 P/In GaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET). Due to the presence of V-shaped like energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. The physical properties of the SDCCFET are investigated in detailed experimentially and theoretically. In theoretically, we can clearly find the distribution of wave functions and electron density in the In GaAs V-shaped like channel. In addition, compared with triangle structure, the modulation of threshold voltage is obtained, too. Based on the theoretical analysis, the properties of each layer and the characteristics of interface may be obtained. This can improve the device performance.
Movva, Hema Chandra Prakash. "Self-aligned graphene field effect transistors with surface transfer doped source/drain access regions". Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5788.
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Cheng, Ching-Ping y 鄭建平. "Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/33a256.
Texto completo國立東華大學
電機工程學系
107
In this paper ,we simulate Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors. First, we simulate different gate-source overlap/underlap structures in a fixed source concentration gradient and observe their I-V characteristics. Next, we simulated five different SDGs for each gate-source overlap/underlap structure and observed their device characteristics. The simulation results show that gate-source overlap structure has better device characteristics than gate-source underlap structure, but the device characteristics do not significantly improve with the increase of the overlap length. On the other hand, the SDG has Hardly affected on the device characteristics in the gate-source overlap structure, and the larger the SDG in the gate-source underlap structure, the better the device characteristics.
Chao, Yi-Ting y 趙怡婷. "Investigation of channel profile on the performance of InGaP/InGaAs pseudomorphic doping-channel field-effect transistors". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67388089979246328959.
Texto completo國立高雄師範大學
電子工程學系
103
In this dissertation, two sets of InGaP/InGaAs pseudomorphic doping-channel field-effect transistors (DCFETs), doped by various In mole fraction in InGaAs channel, were analyzed and discussed. Through the different arrangement of channels, the device characteristics including the energy band diagrams, distribution of carrier, DC and microwave performance are investigated. Simultaneously, each of the studied devices show different device characteristics. We will study and make some inclusions at the end of this thesis. However, all the devices exhibit some good characteristics, such as high turn-on voltage, low leakage current, high current density, large swing, and high as well as linear transconductance. The studied devices show a great promise for high-speed, and high-frequency applications. First, three kinds of DCFETs, including GaAs/In0.1Ga0.9As/In0.2Ga0.8As (device A), In0.2Ga0.8As/In0.1Ga0.9As/GaAs (device B), and In0.1Ga0.9As (device C) doping channels, are studied as the total thickness of multiple channels is fixed at constant. Due to the high barrier and good carrier confinement, the device B shows a maximum drain saturation current of 52.9674 mA and a maximum transconductance value of 303.067 mS/mm. Compared with device A, though the conduction band discontinuity (ΔEc) at InGaP/In0.2Ga0.8As heterojunction in the device B is larger than that at InGaP/GaAs junction in the device A, the confinement effect for channel electrons in the device A is still good attributed to the sum of ΔEc values at three triple junctions. Moreover, in device A, a gate turn-on voltage of 0.9887V, a breakdown voltages of -10.51V, and a threshold voltages of -0.9V are obtained at equilibrium. However, the device C shows the best microwave characteristic among of the three devices. Second, the characteristics of InGaP/In0.1Ga0.9As (device C), InGaP/GaAs (device D), and InGaP/In0.2Ga0.8As (device E) DCFETs are discussed. Three kinds of DCFETs are studied as the thickness of channels is the same. Due to the highest barrier heights of the InGaP/In0.2Ga0.8As discontinuities and the best channel carrier confinement capability, the device E shows the best properties, including a maximum drain saturation current of 53.6875 mA, a maximum transconductance value of 294.576 mS/mm, and the good microwave properties in the three devices. Finally, we will make some conclusions to clarify the differences between these devices.
Chen, Chun-Hua y 陳振華. "STUDIES ON THE DOPING CHARACTERISTICS AND METAL-OXIDE- SEMICONDUCTOR FIELD EFFECT TRANSISTOR FABRICATION OF POLYANILINE CONJUGATED POLYMER". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/37709462553567501844.
Texto completo大同工學院
化學工程學系
85
In this study, studies on the characteristics of polyaniline doped withvarious acids (hydrochloric acid, sulfuric acid, phosphoric acid, p-toluenesulfonic acid monohydrate, bis(2- ethylhexyl)hydrogen phosphateand diphenyl phosphate are to be carried out. Polyaniline doped withbis(2-ethylhexyl)hydrogen phosphate and diphenyl phosphate can dissolve in common organic solvants. The FTIR characteristic bands of PANI dopedacid shift lower wavenumber than those of the PANI base form. The maximum UV-vis absorption spectra of PANI salts are located at higher wavenumber than those of the base form, which exhibit a red shift phenomena. The spin concentration of polyaniline salts can be calculated by EPR spectra. The resultsexhibit the correlation between the conductivity and spin concentration. In other worlds, the charge transport can be explained solely by the migration of paramagnetic polarons along the polymer chanis. The metal-oxide-semiconductor field-effect transistors (MOSFET) are frabricated with polyaniline doped with diphenyl phosphate as the semiconducting layer. These FETs belong to n-typetransistors and are found to be environmentally more stable than those ofother polyaniline FETs.
HUANG, Shao-Jia y 黃紹嘉. "Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/04091130890836214975.
Texto completo國立臺灣師範大學
光電科技研究所
104
Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.
HUANG, PO-HAO y 黃柏豪. "Study of Metal Oxide Semiconductor Field Effect Humidity Sensing Device Using Titanium Dioxide Sensing Film with Nitrogen Doping". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/3f56bh.
Texto completo國立高雄海洋科技大學
微電子工程研究所
102
The TiO2:N2 relative humidity sensing devices were accomplished in accordance with semiconductor structures. The optimum growth parameter of TiO2:N2 sensing film was decided to fabricate the well-defined relative humidity sensor. In this study, the optimum growth temperature of TiO2:N2 sensing film is at 27oC with well properties in the surface morphology, crystallization, and electronic transportation. By the Hall effect measurement, the TiO2:N2 sensing film is revealed the n-type in carrier type. The carrier concentration and mobility of TiO2:N2 sensing films are 3.4×1018 cm3 and 3.4 cm2/Vs respectively. The resistivity and conductivity of TiO2:N2 sensing films are also 1.8Ω-cm and 2.9/Ω-cm respectively. The TiO2:N2 relative humidity sensing devices were fabricated by using photo lithography and lift-off techniques. The adsorption time and desorption time of TiO2:N2 relative humidity sensing devices are respectively 30 seconds from 30% RH up to 90% RH and 65 seconds from 90% RH down to the 30% RH. The sensitivities of TiO2:N2 relative humidity sensing devices in hysteresis and I-V characteristics are respectively 0.12 and 10.41.
Shin, Nara. "Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes". Doctoral thesis, 2019. https://tud.qucosa.de/id/qucosa%3A35131.
Texto completoWinkler, Felix. "Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System". 2020. https://tud.qucosa.de/id/qucosa%3A72882.
Texto completoGaspar, Diana Filipa Pereira. "Active cellulose-based substrates for application in eletronic devices". Doctoral thesis, 2019. http://hdl.handle.net/10362/77144.
Texto completoKleemann, Hans. "Organic Electronic Devices - Fundamentals, Applications, and Novel Concepts". Doctoral thesis, 2012. https://tud.qucosa.de/id/qucosa%3A25534.
Texto completoLin, Chun-Yen y 林俊言. "Effects of Dopant Activation on Poly-Silicon Tunnel Field-Effect Transistors". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/38253608707521858613.
Texto completo國立交通大學
電子物理系所
103
Tunnel field-effect transistor (TFET) is considered as a promising candidate for future ultra-low power device. It has been known that TFET exhibits ultra-low leakage current, higher on/off current ratio and lower than 60 mV/dec subthreshold swing at room temperature. This study discusses the effect of activation on polycrystalline silicon (poly-Si) TFETs by utilizing different annealing conditions. Compared with TFET annealed by SPC at 600 ℃ for 24 hours, the n-channel TFET (NTFET) annealed by 1000 ℃ spike exhibits 2.2-fold higher on current but slight degradation of average subthreshold swing (S.S.ave). For p-channel TFET (PTFET), 900-℃ 30-sec PTFET has 1.8-fold higher on current but also sight degradation of S.S.ave. These experimental results demonstrate that the higher on current is due to higher amount of dopant activation and S.S. strongly depends on the extent of dopant diffusion. On the other hand, microwave annealing (MWA) is used to activate dopant. Unlike the high temperature activation, MWA is considered as low temperature annealing which can suppress dopant diffusion. Therefore, both type of TFETs annealed by MW shows higher on/off ratio and superior S.S.. The addition, the lower threshold voltage (Vth) of MW TFET indicates higher tunneling probability due to the smaller extent of dopant diffusion. From these result, we found that MWA has potential application in future TFET technology.
Fromm, Felix Jonathan. "Raman-Spektroskopie an epitaktischem Graphen auf Siliziumkarbid (0001)". Doctoral thesis, 2014. https://monarch.qucosa.de/id/qucosa%3A20232.
Texto completoWang, Yu-Long y 王裕隆. "Improving electrical characteristics of Fin-shaped Tunneling-Field-Effect-Transistor using Microwave dopant activation and Asymmetry structure". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/45990305348300769134.
Texto completo國立清華大學
工程與系統科學系
101
The market demand for portable electric equipment increase dramatically year by year. Although transistors develop toward low cost and high density, maintaining device characteristics becomes difficult due to the device fabrication and physics limitations of the device. Designing a device that different from conventional MOSFET is a necessary way. This thesis based on Fin-shaped Tunneling Transistor which operated by quantum tunneling mechanism. Thus, compared with conventional MOSFET operated by drift mechanism, the Tunneling Transistor can achieve fast on/off characteristic. By the Fin-shaped structure, it can affect the active layer electric potential distribution by multi-direction, increasing the gate control ability and enhance the characteristics. Above the discussion, the Fin-shaped tunneling transistor is a device with high-efficiency and good transfer characteristic. In this thesis, we focus on demonstrate that microwave dopant activation technique can help TFETs to form an abrupt tunneling junction. Subthreshold slope and driving current can be greatly enhanced by microwave annealing as the dopant activation method compare to traditional rapid thermal annealing. An interesting phenomenon of negative differential conductance in the output characteristic was observed, which is attributed to hot-carrier effect at the high gate overdrive operation. A positive temperature dependence of transfer characteristic is also observed, which is related to the bandgap narrowing effect and the enhancement of the thermionic field emissions of the grain boundary states. Finally, with the geometric difference between source and drain, we demonstrate a device with high on-state current and low off-state current, simultaneously. This work shows experimental data for device’s reliability; all the data can display Fin-shaped tunneling transistor has applied to high value actually, it would become the next-generation device.
Ludemann, Michael. "In situ Raman-Spektroskopie an Metallphthalocyaninen: Von ultradünnen Schichten zum organischen Feldeffekttransistor". Doctoral thesis, 2014. https://monarch.qucosa.de/id/qucosa%3A20482.
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