Tesis sobre el tema "Fiabilité RF"
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Maris, Ferreira Pietro. "Méthodologie de conception AMS/RF pour la fiabilité : conception d'un frontal RF fiabilisé". Phd thesis, Télécom ParisTech, 2011. http://pastel.archives-ouvertes.fr/pastel-00628802.
Texto completoGares, Mohamed. "Etude de la fiabilité des transistors RF LDMOS de puissance en mode pulsé pour des applications hyperfréquences". Rouen, 2008. http://www.theses.fr/2008ROUES003.
Texto completoSince their early implementation, the length of pulses and the cyclic report/ratio did not cease increasing in order to increase the radar performances. These strong requirements of operation increased the quantity of pressure applied to the transistors, which constitue the modules of power in the radars and have a direct impact over their life times. A thorough knowledge of this impact is necesary for a better estimation of the reliability of modules and transistors, which make it up. It is for all these reasons that a study was committed to work out new investigation methods of the power RF components under RF pulses conditions for a radar application. A transistor RF LDMOS was retained for our first tests in accelerated ageing under various conditions (DC, RF, temperature and TOS). Electric characterizations (I-V, C-V and [S] parameters) were carried out. Thus, a complete examination of these critical electric parameters is exposed and analysed. All electric parameter drift after an accelerated ageing are studied and discussed. According to the analysis of these results, one notes that the lower the temperature is, the more important the drifts int the significant electric parameters. In order to understand the physical degradation phenomena inside the structure, we performed a 2-D physical simulation (Silvaco-Atlas). Finally, the degradation mechanism proposed for RF LDMOS is the interface states creation by the hot carriers (traps)
Duong, Quynh Huong. "Conception, caractérisation et modélisation : contribution à la fiabilité de micro-commutateurs RF MEMS". Lille 1, 2007. http://www.theses.fr/2007LIL10166.
Texto completoMardivirin, David. "Etude des mécanismes mis en jeu dans la fiabilité des micro-commutateurs MEMS-RF". Limoges, 2010. https://aurore.unilim.fr/theses/nxfile/default/e321f18e-23a9-4448-99a0-73476cf2cc9d/blobholder:0/2010LIMO4054.pdf.
Texto completoThe work presented in this manuscript focus on the characterization and analysis of failure mechanisms that appear in a new family of microwave components and RF MEMS (RadioFrequency Micro-Electro-Mechanical Systems). If these components have quickly attracted a lot of hopes to solve a large number of locks on new communication architectures, it appeared that the reliability of these components has greatly slowed their industrial development. Moreover, these micro-switches result from a multi-physics coupling which added a high complexity and difficulty of understanding how they work and thus their reliability. Currently, numerous and intense efforts are made by the scientific community (university and industry), as this issue was left open many questions and unresolved problems. This thesis aims to contribute on this area, both on experimental, theoretical and technological plans
Hai, Joycelyn. "fiabilité rf en technologie soi cmos : modélisation et application à un amplificateur de puissance". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT033.
Texto completoThe development of SOI CMOS technology has greatly contributed to the rapid evolution of RF/mmW communication systems which play a critical role in the deployment of 5G networks. To meet the performance targets of 5G specifications, complex modulation schemes use high peak-to-average-power (PAPR) levels that are generated by the power amplifier (PA). The high-power levels, in turn, impact the device reliability due to the voltage handling limits of modern CMOS technology. At early design stages, accurate aging models can be leveraged to assess the trade-off between performance and reliability in consideration of the targeted RF mission profile. The two dominant CMOS reliability mechanisms found in RF PA mission profiles are hot-carrier injection (HCI) and off-state time-dependent dielectric breakdown (off-TDDB). The first part of this thesis aims to consolidate the HCI aging model using well-established RF/mmW aging methodology by performing model-to-hardware correlation (MHC) at accelerated DC and 28GHz RF stress conditions for different PA cell topologies. The MHC, validated for fresh and degraded PA device, is then used to perform a simulation-based sensitivity analysis to evaluate the impact of different model card parameters on the accuracy of RF HCI modeling. The results showed that both fresh and degradation model precision affects the RF degradation estimation, which highlights the significance of a degradation model described by physical effects of the device. The second part of this thesis focuses on the validity of RF modeling approach for off-state reliability (HCI degradation and TDDB). An integrated test structure generating off-state RF stress waveforms at DC, 500MHz and 1GHz to evaluate the frequency dependence in off-state reliability modeling has been designed. Time-power law parametric degradation has been observed in DC and RF (500MHz and 1GHz) off-state HCI stress measurements, suggesting the validity of quasi-static modeling approach for off-state HCI degradation. On the other hand, off-state RF TDDB characterization demonstrate increasing time-to-breakdown with increasing frequency, in particularly a gain factor of x2 at 1GHz compared to DC TDDB. This study was then extended to on and off-state RF HCI stress sequences revealing negligible interaction between the two degradation mechanisms, resulting in an additive degradation modeling approach. The last part of this thesis provides proof of concept to demonstrate aging compensation of a 28GHz RF PA. This is done by implementing the design of a negative feedback loop for on-chip adaptive body bias control in FDSOI technology which partially compensates the threshold voltage drift induced by RF HCI stress
Torres, Matabosch Nuria. "Design for reliability applied to RF-MEMS devices and circuits issued from different TRL environments". Toulouse 3, 2013. http://thesesups.ups-tlse.fr/1943/.
Texto completoThis thesis is intended to deal with reliability of RF-MEMS devices (switches, in particular) from a designer point of view using different fabrication process approaches. This means that the focus will be on how to eliminate or alleviate at the design stage the effects of the most relevant failure mechanisms in each case rather than studying the underlying physics of failure. The detection of the different failure mechanisms are investigated using the RF performance of the device and the developed equivalent circuits. This novel approach allows the end-user to infer the evolution of the device performance versus time going one step further in the Design for Reliability in RF-MEMS. The division of the fabrication process has been done using the Technology Readiness Level of the process. It assesses the maturity of the technology prior to incorporating it into a system or subsystem. An analysis of the different R&D approaches will be presented by highlighting the differences between the different levels in the TRL classification. This thesis pretend to show how reliability can be improved regarding the approach of the fabrication process starting from a very flexible one (LAAS-CNRS as example of low-TRL) passing through a component approach (CEA-Leti as example of medium-TRL) and finishing with a standard co-integrated CMOS-MEMS process (IHP example of high TRL)
Torres-Matabosch, Nuria. "Design pour la fiabilité applique aux composants et circuits RF-MEMS dans différents environnements TRL". Phd thesis, Université Paul Sabatier - Toulouse III, 2013. http://tel.archives-ouvertes.fr/tel-00797045.
Texto completoTsamados, Dimitrios. "Conception et caractérisation de microsystèmes électromécaniques : étude et fiabilité des capacités accordables des MEMS RF". Grenoble INPG, 2005. http://www.theses.fr/2005INPG0016.
Texto completoIn the last years radio-frequency micro-electromechanical systems (RF MEMS) have become very promising components for the improvement of the performances of highfrequency circuits. The possibility of integrating them with standard CMOS devices is a decisive advantage. On the other hand, the reliability of these RF MEMS components still constitutes a major drawback that frequently inhibits their industrialisation. In this thesis, a study of the operation of capacitive RF MEMS is carried out. We present the CMOS-compatible technology adopted for the fabrication and the reliability problems related to it. Specific characterisation tools for the reliability study are also presented. We propose an analytical modelling of the electromechanical behaviour of capacitif RF MEMS which is then compared to finite element 3D analysis. The electrical tests of the tuneable capacitors have revealed various reliability problems, like time-dependent electromechanical characteristics as well as their strong dependence on temperature. The role of the test environment and the resulting difficulties in the interpretation of the experimental data are also demonstrated
Lemoine, Emilien. "Quality and Reliability of RF-MEMS Switches for Space Applications". Thesis, Limoges, 2014. http://www.theses.fr/2014LIMO0062/document.
Texto completoThe thesis deals with reliability of tiny electro-mechanical components called MEMS. MEMS stands for Micro-Electro-Mechanical Systems. These components, designed for switching applications, are suitable candidates for telecommunications due to their low power consumption, Radio-Frequencies (RF) performances, compactness and lightness. A MEMS is fabricated using processes of integrated circuit manufacturing that makes its cost relatively low. Few of these components are commercially available and more are expected to be in the market as soon as reliability issues will be solved. Reliability issues studied in the thesis regard mechanical creep and acceleration factors. The mechanical creep occurs in our suspended structures whilst enduring a constant force, it results in deformation of structures and shift of parameters. Two innovative test benches are developed to assess mechanical creep in RF-MEMS switches. The acceleration factors are keys to conduct accelerated testings and predict lifetime of RF-MEMS switches. Parameters such as bias voltage, input-to-output voltage, temperature are varied to assess lifetime of switches and extract these acceleration factors
Fillit, Chrystelle. "Développement d’un banc de thermographie infrarouge pour l’analyse in-situ de la fiabilité des microsystèmes". Thesis, Saint-Etienne, EMSE, 2011. http://www.theses.fr/2011EMSE0600/document.
Texto completoOver the last few years, considerable effort has gone into the study of the failure mechanisms and reliability of MicroElectroMechanical Systems (MEMS). MEMS performance and reliability are affected by many parameters, such as the complex physical interactions between thermo-mechanical deformation, current flow, high power actuation and contact heating. In particular, temperature is a key issue for the design of a low loss and reliable MEMS. In order to improve device reliability it is essential to understand the thermal behaviours of RF-MEMS under standard or harsh current conditions. In this work, we present a new approach to investigate the failure mechanism of MEMS. An original set-up has been developed to localise and measure the heat loss of MEMS during actuation. Thermal characterization has been performed using infrared thermography to investigate the thermal sensitivity of MEMS. A brand new infrared bench was developed for temperature distribution measurement. An infrared camera, operating in the 1,5 - 5 µm bandwidth, was coupled to a new specific optic to reach an enhanced spatial resolution better than 2 µm/pixel. This work presents several results obtained on different advanced RF-MEMS including RF-MEMS switches where failure mechanism had been diagnosed
Ivira, Brice. "Fiabilité des résonateurs de type BAW pour les applications dans le secteur des télécommunications". Grenoble INPG, 2006. http://www.theses.fr/2006INPG0184.
Texto completoImpact of high temperatures and important humidity atmosphere on Bulk Acoustic Wave (BA W) resonators is determined by means of RF characterizations, X-rays diffraction and fluorescence. Afterwards, the TCF ofvarious BA W technologies is determined well above temperature specifications of wireless systems. To improve thermal stability of structures, temperature compensation is studied in a theorical manner. Furthermore, for studying self. Heating aspects, an RF power bench was specially designed for this project in order to measure, in real time, the reflection coefficient at resonator's input. An infrared camera having a spatial resolution as good as 2 /lm/pixel allows us mapping accurately temperature. Finally, comparison between 3D FEM analysis and IR measures is done
Matmat, Mohamed. "Pour une approche complète de l'évaluation de fiabilité dans les microsystèmes". Phd thesis, INSA de Toulouse, 2010. http://tel.archives-ouvertes.fr/tel-00538717.
Texto completoIghilahriz, Salim. "Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS". Phd thesis, Université de Grenoble, 2014. http://tel.archives-ouvertes.fr/tel-01060162.
Texto completoChetibi-RIah, Mouna. "Caractérisation et modélisation électrothermique non linéaire des transistors hyperfréquences de puissance « RF Si-LDMOSFETs pour l’étude de la fiabilité". Rouen, 2009. http://www.theses.fr/2009ROUES015.
Texto completoThis work deals with electrothermal modelling of LDMOS power transistor for the study of reliability in radar applications. In a first part, we presented the characteristics of MOS transistors, and particularly the LDMOS, compared to bipolar transistors. We studied the influence of the temperature rise in semiconductor components on their relevant physical quantities. Finally, we explained the basics of the reliability of power transistors and we discussed ways and mechanisms of failure and the main laws of acceleration of failure (temperature, current density, injection of hot carriers). In a second part, the whole process of extraction of electrothermal model of an LDMOS is presented in detail. This study was based on the MET model deemed most appropriate for RF LDMOS power transistor. The reliability bench used to perform accelerated ageing tests has been described in chapter three. The goal is the understanding of the degradation of the reliability of such components in pulsed mode. Thus, all the electrical and RF parameters drifts after accelerated ageing tests have been studied and discussed
Fillit, Chrystelle. "Développement d'un banc de thermographie infrarouge pour l'analyse in-situ de la fiabilité des microsystèmes". Phd thesis, Ecole Nationale Supérieure des Mines de Saint-Etienne, 2011. http://tel.archives-ouvertes.fr/tel-00788682.
Texto completoMardivirin, David. "ETUDE DES MECANISMES MIS EN JEU DANS LA FIABILITE DES MICRO-COMMUTATEURS MEMS-RF". Phd thesis, Université de Limoges, 2010. http://tel.archives-ouvertes.fr/tel-00608495.
Texto completoLamhamdi, Mohamed. "Développement d'outils d'analyse des matériaux pour l'étude du chargement des diélectriques : application à la fiabilité des micro-commutateurs RF à actionnement électrostatique". Toulouse 3, 2008. http://thesesups.ups-tlse.fr/470/.
Texto completoThe end of the 1990's was marked by an important evolution of RF and microwave electronic systems. Since then, several innovating and performing devices were developed. But, besides their very high performances, these devices did not reach a commercial success basically because of reliability problems. This study deals with the improvement of the electrostatic actuation micro switches' reliability which main failure mechanism is related to the accumulation of charges in the isolating layers during the actuation process. The thesis subject is the developing of characterization tools to evaluate the performances of different dielectrics used in RF capacitive micro switches for electronic high frequency systems. The first part aims to present some generalities on different types of RF switches, to review the charging mechanisms in dielectrics used in these components, and then to set out the detailed goals of the thesis work. The second part of our work is dedicated to the study of physico-chemical characteristics of different PECVD silicon nitride deposits used in the device's technology, and to the description of the pre-necessaries for the set up of plasma deposited materials, in order to link the layers' electrical behavior to their structure and composition. An analysis of the chemical composition and the stoechiometry of films were performed using FTIR and RBS techniques. In the third part, a MIM structure is introduced. .
Lamhamdi, Mohamed. "Développement d'outils d'analyse des matériaux pour l'étude du chargement des diélectriques: application à la fiabilité des micro-commutateurs RF à actionnement éléctrostatique". Phd thesis, Université Paul Sabatier - Toulouse III, 2008. http://tel.archives-ouvertes.fr/tel-00366723.
Texto completoRichard, Mikaël. "Développement des composants passifs pour les circuits MMICs en GaN". Paris 6, 2009. http://www.theses.fr/2009PA066677.
Texto completoMelle, Samuel. "Analyse et modélisation des phénomènes de chargement de diélectriques dans les MEMS RF : application à la fiabilité prédictive de micro-commutateurs électromécaniques micro-ondes". Phd thesis, Université Paul Sabatier - Toulouse III, 2005. http://tel.archives-ouvertes.fr/tel-00011359.
Texto completoLajmi, Rania. "Caractérisation et modélisation du vieillissement des circuits analogiques et RF en technologie 28 nm FDSOI". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT088.
Texto completoReliability of analog and mixed signal circuits fabricated using complementary metaloxide semiconductor technologies in the deep-submicrometer technology nodes is significantly affected by process, voltage and temperature (PVT) variations. Degradationinduced due to aging mechanisms like bias temperature instability, hot carrier injection leads to additional challenges in design of reliable circuits. PVT variations and aging mechanisms together lead to lifetime degradation of device and circuit performance.There are many studies in the literature of the reliability of MOS transistors. Few studies have been conducted on the impact of their reliability on circuits.This research will study the impact of the deterioration of the MOS transistors on the performance of the developed circuits for analog and mixed applications (low dropout voltage regulator LDO, phase locked loop PLL, voltage controlled oscillator VCO, digital to analog converter CAN, power amplifier PA).Degradation lifetime induces the degradation of the threshold voltage and the drain. The surveys are conducted using aging simulations supporting models of aging mechanisms developed by our team and measurements of circuits implemented in 28nmFDSOI technology. Accelerated tests were used to evaluate the aging effect. Appropriate correction techniques for overcoming aging-induced degradation of circuit performance are proposed and studied.The DC and AC performances of LDO were analyzed before and after aging. The stress induces a degradation of these performances because of the effect of the mechanism of injection of hot carriers (HCI) on the transistors and the Matching induced in the pair of transistors responsible for the regulation. The LDO was oversized to avoid severe damage. A survey of the evolution of yield before and after aging was done using Mundea WICKED tool.The jitter noise and lock time of the PLL are not affected by aging and the PLL itself corrects any degradations and deviations of its output parameters. For this, an investigation of one of its important blocks, the VCO, was made. Measurement results at 125 ° C show that the oscillation frequency of the VCO has undergone significant degradation. While the relative phase noise has not been impacted.The aging effect on the digital analog converter SAR-ADC consisting of 16 TI-ADCs has occurred. Extraction of static and dynamic performances showed a significant degradation of the SNR. In order to identify the block responsible for this degradation, simulations of a single ADC were made. Aging has negligible impact on the switches while the comparator was identified as the most sensitive block. Aging impacts the time windows for each sub-block of the comparator which gives rise to a false decision of one of these blocks, hence a false signal at the output of the comparator, resulting in a code error and a degradation in the performance of the ADC.Investigation of the aging effect on the power amplifier has shown a significant degradation of the PA figures of merit under the effect of RF stress. These impairments are due to the degradation of transistor parameters such as transconductance gm and resistor rds. A solution for improving these degradations has been proposed. Based on the principle of detection and adaptive polarization, this technique makes it possible to change the polarization of the PA in order to bring the degraded performances to their fresh value.Based on this research, it is possible to conclude that the aging mechanisms of the 28nmFDSOI CMOS technology are not a major obstacle to the development of analogue and mixed signal systems. However, a careful analysis of the effects of aging at the circuit level, from the design phase, using the models developed at the transistor level and included in the simulators, is necessary.The incorporation of effective detection and performance enhancement solutions is possible for the implementation of extremely precise circuits
Ben, Hassine Nizar. "Etude de la fiabilité des composants à ondes acoustiques de volume (BAW) pour de applications radio fréquence". Phd thesis, Université Joseph Fourier (Grenoble), 2009. http://tel.archives-ouvertes.fr/tel-00442862.
Texto completoBordas, Chloé. "Optimisation technologique de commutateurs MEMS RF à tenue en puissance améliorée : application à l'élaboration d'un synthétiseur d'impédance MEMS en bande K". Toulouse 3, 2008. http://thesesups.ups-tlse.fr/238/.
Texto completoCapacitive RF MicroElectroMechanical System switches present well-known interests in microwave field for a lot of applications (spatial, mobile phone). They may bring tunability to high frequency modules without all the drawbacks of active devices. However numerous problems remain unsolved like dielectric reliability, power handling and fabrication yield which slow down the industrialisation of such components. Efforts have already been done on the design, the dielectric reliability and the technological process. This last-one is not enough improved to obtain functional structures with enhanced performances and reproducibility. The purpose of this thesis work deals with the optimization of the fabrication process of capacitive RF switches with enhanced power handling and their integration in an impedance tuner for K band applications. The first section shows the fabrication process and its principal improvements. Studies on sacrificial layer and releasing method permitted to increase the RF performances and the technological yield. Moreover, new dielectrics have been investigated in order to get better switch life time. The relation between the applied power and the generated temperature is described in the second chapter. Thermal characterizations have been performed to understand the mechanical behaviours under stress. Thanks to infra-red camera, the overheating due to power has been determined. Solutions have been found and studied to absorb or prevent deformations under thermal stress. Finally, all these improvements and studies have been applied to a circuit: an impedance tuner. Its design, fabrication and characterization constitute the final chapter of this manuscript
Broue, Adrien. "Analyse multi physique des sources de défiabilisation du microcontact électrique à destination des interrupteurs MEMS". Toulouse 3, 2012. http://thesesups.ups-tlse.fr/1985/.
Texto completoResearch on electrical contact characterization for microelectromechanical system (MEMS) switches has been driven by the necessity to reach a high-reliability level for micro-switch applications. One of the main failure observed when aging devices with gold contacts is the increase of the electrical contact resistance. It is related to degradations of the surface topography caused by heating, adhesion forces, etc. In this paper we investigate the performance of gold and an alternative material, ruthenium, using a methodology dedicated to MEMS contacts: a nanoindenter is used to actuate mechanically the structure, providing an accurate control of the force applied and of the resulting displacement. The electrical resistance is measured by cross rods technique "four wires" to avoid any measurement of the wire access resistances. A high resolution source meter with programmed voltage compliance and micro voltmeter is used. The test vehicles are surface micromachined on silicon substrate. Dedicated tests and modelling are presented with 5 microm² square bumps under mechanical load (until 250microN) and electrical current (1mA-100mA). Analyses of contact force dependence, temperature dependence, adhesion forces, evolution of the contact area, creep behavior and topological modifications are discussed. Regarding the results, better understanding of micro-contact behavior related to the impact of current at low- to medium-power levels is obtained. Contact heating until the softening temperature is found to be the main factor leading to shift of mechanical properties of contact materials and topological modifications. Finally an enhanced stability of the bimetallic contact was demonstrated considering sensitivity to power increase
Benhadjala, Warda. "Fiabilité et miniaturisation des condensateurs pour l'aéronautique : de l'évaluation de composants céramique de puissance à l'étude de nanoparticules hybrides céramique / polymère pour technologies enterrées". Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR15271/document.
Texto completoThe improvement of electronic systems for the deployment of all-electric aircrafts depends on the ability of passive components, such as capacitors, to reduce their volume, weight and cost, and to increase their performance and reliability, particularly in the aeronautical environment. In this context, the objective of this thesis was to study and develop novel capacitor technologies for avionics. In the first part of this work, the evaluation of power ceramic capacitors has been discussed. Indeed, the ceramic technology appeared to be one of the few mature solutions meeting the requirements of OEMs. The characterization, the failure mode, effects and criticality analysis (FMECA) and reliability and robustness assessment of commercial components using original architectures (multi-chip capacitors) have been performed. These results have been completed by a more advanced study on the characterization of new ceramics sintered by spark plasma sintering (SPS). The colossal permittivity of these materials could allow to increase reliability and miniaturization of capacitors while maintaining high values of capacitance and voltage rating. The second part, more fundamental, is devoted to the development of core-shell ceramic/polymer nanoparticles for embedded capacitors operating at radiofrequencies. The synthesis and the physicochemical characterization of the nanocomposites as well as the manufacturing processes of the thick film capacitors are first described. A new broadband electrical characterization methodology has been developed to analyze the dielectric properties and the conduction mechanisms of the nanoparticles. The effects of the temperature and the manufacturing process on the device performance have been investigated. In addition, the durability was evaluated
Bordas, Chloe. "Optimisation technologique de commutateurs MEMS RF à tenue en puissance améliorée - Application à l'élaboration d'un synthétiseur d'impédance MEMS en bande K". Phd thesis, Université Paul Sabatier - Toulouse III, 2008. http://tel.archives-ouvertes.fr/tel-00265347.
Texto completoLahbib, Insaf. "Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive". Thesis, Normandie, 2017. http://www.theses.fr/2017NORMC256.
Texto completoThe work of this thesis focuses on the simulation of the electrical parameters degradation of MOS and bipolar transistors under static and dynamic stresses. This study was conducted using an in-house reliability simulation tool. According to the MOS or bipolar technology, the studied mechanisms were successively: Hot Carrier Injection, Bias Temperature instability, Mixed Mode and Reverse base emitter bias. The investigation was then extended to circuit-level. The effect of transistors degradation on a ring oscillator frequency and the RF performances of a low noise amplifier were investigated. The circuits were subjected to DC, AC and RF constraints. Predictability of these degradations has been validated by experimental aging tests on encapsulated and PCB-mounted demonstrators. The results of these studies proved the accuracy of the simulator and validated the quasi-static calculation method used to predict the degradation under dynamic stress. The goal of this research is to embed this predictive approach into a circuit design flow to ensure its reliability
Ruan, Jinyu Jason. "Analyse et modélisation de l'impact des décharges électrostatiques et des agressions électromagnétiques sur les microcommutateurs". Phd thesis, Université Paul Sabatier - Toulouse III, 2010. http://tel.archives-ouvertes.fr/tel-00512333.
Texto completoHeiba, Usama Zaghloul. "Nanoscale and macroscale characterization of the dielectric charging phenomenon and stiction mechanisms for electrostatic MEMS/NEMS reliability". Toulouse 3, 2011. http://thesesups.ups-tlse.fr/1428/.
Texto completoThe reliability of electrostatically actuated micro- and nano-electromechanical systems (MEMS and NEMS) is determined by several failure modes which originate from different failure mechanisms. Among various reliability concerns, the dielectric charging constitutes major failure mechanism which inhibits the commercialization of several electrostatic MEMS devices. In electrostatic capacitive MEMS switches, for example, the charging phenomenon results in shifting the electrical characteristics and leads to stiction causing the device failure. In spite of the extensive study done on this topic, a comprehensive understanding of the charging phenomenon and its relevant failure mechanisms are still missing. The characterization techniques employed to investigate this problem, though useful, have serious limitations in addition to the missing correlation between their results. On the other hand, recent studies show that tribological phenomena such as adhesion and friction are crucial in MEMS/NEMS devices requiring relative motion and could affect their performance. Since the operation of MEMS switch is based on intermittent contact between two surfaces, the movable electrode and the dielectric, critical tribological concerns may also occur at the interface and influence the device reliability. These concerns have not been investigated before, and consequently, micro/nanotribological studies are needed to develop a fundamental understanding of these interfacial phenomena. Also, the multiphysics coupling between the charging phenomena and those expected tribological effects needs to be studied. This thesis addresses the abovementioned weaknesses and presents numerous novel characterization techniques to study the charging phenomenon based on Kelvin probe force microscopy (KPFM) and, for the first time, force-distance curve (FDC) measurements. These methods were used to study plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films for application in electrostatic capacitive MEMS switches. The proposed methods are performed on the nanoscale and take the advantage of the atomic force microscope (AFM) tip to simulate a single asperity contact between the switch movable electrode and the dielectric surface. Different device structures were characterized including bare dielectric films, MIM capacitors, and MEMS switches. In addition, the charge/discharge current transients (C/DCT) and thermally stimulated depolarization current (TSDC) assessment methods were used to study the charging/discharging processes in metal-insulator-metal (MIM) capacitors. A comparison and correlation between the results from the investigated characterization techniques were performed. Moreover, a correlation between the obtained nanoscale/macroscale results and the literature reported data obtained from device level measurements of actual MEMS devices was made. The influence of several key parameters on the charging/discharging processes was investigated. This includes the impact of the dielectric film thickness, dielectric deposition conditions, and substrate. SiNx films with different thicknesses were deposited over metal layers and over silicon substrates to study the effect of the dielectric thickness. The impact of the dielectric deposition conditions was investigated through depositing SiNx films using different gas ratio, temperature, power, and RF modes. To study the influence of the substrate, SiNx layers were deposited on evaporated gold, electrochemically-deposited gold, evaporated titanium layers, and over bare silicon substrates. Fourier transform infra-red spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) material characterization techniques were used to determine the chemical bonds and compositions, respectively, of the investigated SiNx films. The obtained data from these techniques were used to explain the electrical characterization results. The impact of electrical charge injection conditions, which are the voltage amplitude, polarity and duration, was also explored. Finally, the influence of the relative humidity, environment medium, and contaminants on the charging phenomenon was studied. Furthermore, the thesis investigates different tribological phenomena at the interface between the two contacting surfaces of electrostatic MEMS switches as well as their multiphysics coupling with the dielectric charging failure mechanism. The adhesive and friction forces were measured on the nanoscale under different electrical stress conditions and relative humidity levels using an AFM to study different stiction mechanisms. In these devices, stiction can be caused by two main mechanisms: dielectric charging and meniscus formation resulting from the adsorbed water layer at the interface. The effect of each mechanism as well as their multiphysics interaction and impact on the overall adhesion or stiction was quantified. Finally, the impact of the dielectric charging on the friction force between the two contacting surfaces of the switch has been studied
Ducarouge, Benoît. "Conception et caractérisation de micro-commutateurs électromécaniques hyperfréquences de puissance : application à un circuit de commutation d'émission/réception large bande". Toulouse 3, 2005. http://www.theses.fr/2005TOU30172.
Texto completoMEMS ("Micro Electro Mechanical Systems") technologies have been successfully introduced in the past decade in order to develop smart micro-systems exhibiting high integration level, new functionalities such as reconfigurability (to switch over different standards) or self repairing ability, and high electrical performances up to millimeterwave frequencies. Moreover, new system architectures can be implemented thanks to these devices, which demonstrate the potentialities of MEMS technologies in future wireless systems. In the meantime, their multi-physic design dealing with electrostatic, mechanical and electromagnetical concerns, translates into a long and complex optimization of the MEMS-based circuits slowing their industrial use. Moreover, few studies are available on the power handling capabilities of these components, which is the key parameter to improve their integration into front-end networks. Our work, made in LAAS-CNRS, concentrates on the design and characterisation of power RF-MEMS switches and their integration into a broadband single pole double throw circuit, for front-end duplexer operating in X band. The first chapter will be dedicated to a multi-physic design methodology for capacitive electrostaticaly actuated RF-MEMS switches design. This methodology, associated with an optimized topology, enables an efficient development of MEMS components and circuits. Demonstrators have been measured and demonstrate outstanding RF performances which validate the proposed methodology. The second part of this work points out the power optimization of RF MEMS switches. A power handling prediction methodology has been proposed and used to optimize the switch described in the first chapter. Simulations have been confirmed by measurements which validate our prediction method. The measured RF MEMS power handling demonstrates the ability of this technology to be used in front-end circuits and systems. Finally, the third chapter deals with an application using the methodologies described above: a broadband (6-18 GHz) power switching circuit for front-end duplexer. This circuit has been optimized, realized and characterized and exhibits state of the art microwave and power performances over a broad frequency band
Bouly, Frédéric. "Etude d’un module accélérateur supraconducteur et de ses systèmes de régulation pour le projet MYRRHA". Thesis, Paris 11, 2011. http://www.theses.fr/2011PA112231/document.
Texto completoThe MYRRHA ( Multi-purpose hYbrid Research Reactor for High-tech Applications ) project aims at constructing an accelerator driven system (ADS) demonstrator (50 à 100 MWth) to explore the feasibility of nuclear waste transmutation. Such a subcritical reactor requires an extremely reliable accelerator which delivers a CW high power protons beam (600 MeV, 4 mA). The reference solution for this machine is a superconducting linear accelerator. This thesis presents the work - undertaken at IPN Orsay in October 2008 - on the study of a prototypical superconducting module and the feedback control systems of its cavity for the high energy part of the MYRRHA linac. First, the optimization and the design of 5-cell elliptical cavities (β=0,65), operating at 704.4 MHz, are presented. Then, the experimental work focuses on a reliability oriented study of the “cryomodule” which hold a prototypical 5-cell cavity (β=0,47). In this study, the dynamic behavior of the fast tuning system of the cavity was measured and qualified. The “field flatness” issue in “low beta” multi-cell cavity was also brought to light. Finally, a fault-tolerance analysis of the linac was carried out. Toward this goal, a model of the cavity, its RF feedback loop system and its tuning system feedback loop was developed. This study enabled to determine the RF power needs, the tuning system requirements and as well as to demonstrate the feasibility of fast fault-recovery scenarios to minimize the number of beam interruptions in the MYRRHA linac
Bouly, Frédéric. "Etude d'un module accélérateur supraconducteur et de ses systèmes de régulation pour le projet MYRRHA". Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00660392.
Texto completoPeyrou, David. "Etude théorique et expérimentale des techniques d’assemblage et de mise en boîtier pour l’intégration de microsystèmes radio-fréquences". Toulouse 3, 2006. http://www.theses.fr/2006TOU30130.
Texto completoRadio-Frequency Micro-Electro-Mechanical Systems (RF MEMS) are highly miniaturized devices intended to switch, modulate, filter or tune electrical signals from DC to microwave frequencies. RF Mems switches are characterized by their high isolation, low insertion loss, large bandwith and by their unparalleled signal linearity. Despite these benefits, RF Mems switches are not yet seen in commercial products because of reliability issues, limits in signal power handling and question in packaging. In this context, we put in evidence, a near hermetic packaging based on a micro-machined cap in Foturan sealed onto a photopatternable polymer Benzo-Cyclo-Butene (BCB) as a solution adapted to micro-switches RF. To answer the stakes in conception, we identified needs in multiphysics modelling able to generate behavioural macro-models. Finally, a demonstrator was characterised in terms of return and insertion losses measurements, which assures insignificant impact of the package on the RF losses
Oudji, Salma. "Analyse de la robustesse et des améliorations potentielles du protocole RadioFréquences Sub-GHz KNX utilisé pour l’IoT domotique". Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0121/document.
Texto completoThis thesis addresses the performance of the KNX-RF protocol used for home automation applications in terms of radiofrequency robustness in a multi-protocol environment that is potentially subject to interferences. In this work, the aim is to assess the interference problems encountered by KNX-RF using simulation models that would increase its RF reliability. Thus, a first model was developed on MATLAB / Simulink and allowed to investigate the performance and limitations of this protocol at its physical layer in an interference scenario occurring inside a multiprotocol home and building automation box/gateway. These simulations were followed by field experimental tests in an indoor environment (house) to verify the results. A second model was developed to evaluate the MAC layer mechanisms of KNX-RF through the discrete event simulator OMNeT ++/Mixim. This model includes all the mechanisms of channel access and frequency agility specified by KNX-RF standard. A frame collision scenario was simulated and several improvement proposals are discussed in this manuscript. The developed models can be used to analyze and predict in advance phase the behavior of KNX-RF in a radio-constrained environment
Broué, Adrien. "Analyse multi-physique des sources de défiabilisation du microcontact ohmique dans les interrupteurs MEMS". Phd thesis, Université Paul Sabatier - Toulouse III, 2012. http://tel.archives-ouvertes.fr/tel-00862813.
Texto completoMoultif, Niemat. "Analyse de défaillance dans les transistors de puissance grand gap par électroluminescence spectrale". Thesis, Normandie, 2017. http://www.theses.fr/2017NORMR052/document.
Texto completoSpectroscopic photon emission microscopy (SPEM) is a non-destructive technique used as a defect localizing tool and as an indicator of the failure mechanisms. This thesis presents a new system of SPEM developed to study the reliability of wide band Gap power devices notably SiC MOSFETs and AlGaN/GaN HEMTs. An overview of different fundamental aspects of the light emission defects on semiconductors devices is presented. The electroluminescence spectral analysis of high power stressed SiC MOSFETs and AlGaN/GaN HEMTs is reported and correlated with electrical and micro-structural analysis to localize the failures and identify the physical origin of the performance drift of these components
Aissi, Mohammed. "Conception de circuits WLAN 5 GHZ à résonateurs BAW-FBAR intégrés : oscillateurs et amplificateurs filtrants". Phd thesis, Université Paul Sabatier - Toulouse III, 2006. http://tel.archives-ouvertes.fr/tel-00127363.
Texto completoBen, Hassine N. "Etude de la fiabilité de composants BAW pour des applications RF". Phd thesis, 2009. http://tel.archives-ouvertes.fr/tel-00481883.
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