Literatura académica sobre el tema "Extrinsic Semiconductors"
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Artículos de revistas sobre el tema "Extrinsic Semiconductors"
Yang, Jin-Peng, Hai-Tao Chen y Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, n.º 24 (28 de junio de 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Texto completoZeitler, U. y A. G. M. Jansen. "Extrinsic magnetoresistance in semiconductors". Physica B: Condensed Matter 204, n.º 1-4 (enero de 1995): 90–94. http://dx.doi.org/10.1016/0921-4526(94)00247-s.
Texto completoGösele, Ulrich M. y Teh Y. Tan. "Point Defects and Diffusion in Semiconductors". MRS Bulletin 16, n.º 11 (noviembre de 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.
Texto completoLiboff, Richard L. "Quasiclassical mobility for extrinsic semiconductors". Journal of Physics and Chemistry of Solids 46, n.º 11 (enero de 1985): 1327–30. http://dx.doi.org/10.1016/0022-3697(85)90134-9.
Texto completoMazzeo, M. P. y L. Restuccia. "Thermodynamics of n-type extrinsic semiconductors". Energy 36, n.º 7 (julio de 2011): 4577–84. http://dx.doi.org/10.1016/j.energy.2011.02.055.
Texto completoKatzengruber, B., M. Krupa y P. Szmolyan. "Bifurcation of traveling waves in extrinsic semiconductors". Physica D: Nonlinear Phenomena 144, n.º 1-2 (septiembre de 2000): 1–19. http://dx.doi.org/10.1016/s0167-2789(00)00030-0.
Texto completoRidgway, M. C., C. J. Glover, G. de M. Azevedo, S. M. Kluth, K. M. Yu y G. J. Foran. "Structure in amorphous semiconductors: Extrinsic and intrinsic". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 238, n.º 1-4 (agosto de 2005): 294–301. http://dx.doi.org/10.1016/j.nimb.2005.06.066.
Texto completoBordovskiĭ, G. A., R. A. Castro y E. I. Terukov. "Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors". Technical Physics Letters 32, n.º 11 (noviembre de 2006): 913–15. http://dx.doi.org/10.1134/s1063785006110010.
Texto completoKartheuser, E., J. Schmit y R. Evrard. "Theory of extrinsic oscillatory photoconductivity in polar semiconductors". Journal of Applied Physics 63, n.º 3 (febrero de 1988): 784–88. http://dx.doi.org/10.1063/1.340070.
Texto completoWu, Chhi-Chong y Jensan Tsai. "Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors". Journal of Low Temperature Physics 73, n.º 1-2 (octubre de 1988): 53–78. http://dx.doi.org/10.1007/bf00681743.
Texto completoTesis sobre el tema "Extrinsic Semiconductors"
Spina, Carla. "Zinc oxide semiconducting nanocrystals : scaffolds for intrinsic and extrinsic defects". Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=115869.
Texto completoWu, Wen. "Modeling the extrinsic resistance and capacitance of planar and non-planar MOSFETs /". View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUW.
Texto completoTang, Xinghai. "Intrinsic and extrinsic parameter fluctuation limits on gigascale integration (GSI)". Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/13305.
Texto completoMICHELI, PAOLA R. de. "Analise termografica e espectrofotometrica do clareamento dental extrinseco utilizando laser de diodo e sistema de LED. Estudo in vitro". reponame:Repositório Institucional do IPEN, 2004. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11197.
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Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)
IPEN/D-MPLO
Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo
Delacourt, Bruno. "Étude du dopage extrinsèque dans CdHgTe pour la réalisation de photodiodes infrarouges". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY110.
Texto completoInfrared photodiodes, which are based on narrow gap semiconductors, permit collection of carriers generated by photons impact but also by thermal agitation. This agitation create a parasitic dark current deteriorating device performance. In order to minimize this dark current, the key parameter to maximize is the minority carrier lifetime. In high operating temperature (HOT) context, it open the possibility to increase the operating temperature of photonic infrared detectors. For the mid-wave infrared window, the goal is to work at 150−180 K instead of 80−120 K currently. This would allow significant progress in terms of energy consumption, power and thus autonomy and reliability of the systems. The objective of this thesis is to experimentally determine the theoretical limits of the minority carrier lifetime in HgCdTe and in a III-V semiconductor. For this, a photoluminescence decay measurement bench as well as a data extraction method making possible to discriminate the recombination mechanisms from the evolution of the signal as a function of the level of carrier injection in the sample were developed. In parallel, a set of characterizations was carried out to assist the development of technologies addressing the HOT context
Davidová, Lenka. "Diagnostika polovodičových materiálů metodou EBIC". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-319289.
Texto completoLibros sobre el tema "Extrinsic Semiconductors"
Solymar, L., D. Walsh y R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.
Texto completoBi, J. F. y K. L. Teo. Nanoscale Ge1−xMnxTe ferromagnetic semiconductors. Editado por A. V. Narlikar y Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.17.
Texto completoCapítulos de libros sobre el tema "Extrinsic Semiconductors"
Balkan, Naci y Ayşe Erol. "Intrinsic and Extrinsic Semiconductors". En Graduate Texts in Physics, 37–78. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-44936-4_2.
Texto completoGurylev, Vitaly. "Extrinsic Defects in Nanostructured Semiconductors". En Nanostructured Photocatalyst via Defect Engineering, 319–48. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81911-8_10.
Texto completoBergmann, Michael J., Stephen W. Teitsworth y Luis L. Bonilla. "Nucleation of Space-Charge Waves in an Extrinsic Semiconductor with Nonuniform Impurity Profile". En Hot Carriers in Semiconductors, 505–7. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_115.
Texto completoTeitsworth, S. W., M. J. Bergmann y L. L. Bonilla. "Space Charge Instabilities and Nonlinear Waves in Extrinsic Semiconductors". En Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, 46–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79506-0_3.
Texto completoMerle, J. C., F. Meseguer y M. Cardona. "Light Scattering in CuCl — Intrinsic and Extrinsic Effects". En Proceedings of the 17th International Conference on the Physics of Semiconductors, 1193–96. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_270.
Texto completoRoth, A. P., R. Masut, D. Morris y C. Lacelle. "Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells". En Properties of Impurity States in Superlattice Semiconductors, 271–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_21.
Texto completoGermanova, K., V. Donchev, Ch Hardalov y M. Saraydarov. "Extrinsic Surface Photovoltage Spectroscopy — An Alternative Approach To Deep Level Characterisation In Semiconductors". En Photovoltaic and Photoactive Materials — Properties, Technology and Applications, 317–20. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0632-3_30.
Texto completoWeik, Martin H. "extrinsic semiconductor". En Computer Science and Communications Dictionary, 561. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_6700.
Texto completoArdouin, B., T. Zimmer, H. Mnif, P. Fouillat, D. Berger y D. Céli. "Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination". En Simulation of Semiconductor Processes and Devices 2001, 304–7. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_68.
Texto completoCristiano, F., B. Colombeau, C. Bonafos, J. Aussoleil, G. Ben Assayag y A. Claverie. "Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon". En Simulation of Semiconductor Processes and Devices 2001, 30–33. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_6.
Texto completoActas de conferencias sobre el tema "Extrinsic Semiconductors"
van der Pol, Tom, Matthew Dyson, Kunal Datta, Stefan Meskers y René Janssen. "Photoluminescence of thin film semiconductors affected by extrinsic effects". En Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, editado por Alexandre Freundlich, Karin Hinzer y Stéphane Collin. SPIE, 2022. http://dx.doi.org/10.1117/12.2604832.
Texto completovan der Wel, P. J., J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh y Y. C. Wang. "Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors". En 2006 Reliability of Compound Semiconductors Digest. IEEE, 2006. http://dx.doi.org/10.1109/rocs.2006.323402.
Texto completoMönch, Winfried. "Adsorbate-induced Surface States and Fermi-level Pinning at Semiconductor Surfaces". En Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tuc1.
Texto completoWhitman, Charles S. "Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method". En 2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]. IEEE, 2007. http://dx.doi.org/10.1109/rocs.2007.4391067.
Texto completoPodoleanu, A. Gh. "Optical Faraday extrinsic current sensor using semimagnetic semiconductors and one down-lead optical fibre". En 13th International Conference on Optical Fiber Sensors. SPIE, 1999. http://dx.doi.org/10.1117/12.2302039.
Texto completoSatou, Akira, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii y Taiichi Otsuji. "Extraction of intrinsic and extrinsic parameters of graphene field-effect transistor from its asymmetric I–V characteristic". En 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528701.
Texto completoBuscemi, F., E. Piccinini, R. Brunetti y M. Rudan. "Intrinsic and extrinsic stability of Ovonic-switching devices". En 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292352.
Texto completoZaletaev, Nicolas B. y Vasily F. Kocherov. "Extrinsic semiconductor low-background infrared field-effect transistor of a new type". En SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, editado por Marija Strojnik y Bjorn F. Andresen. SPIE, 1995. http://dx.doi.org/10.1117/12.221389.
Texto completoPerera, A. G. U. "IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices". En 16th International Conference on Infrared and Millimeter Waves. SPIE, 1991. http://dx.doi.org/10.1117/12.2297947.
Texto completoDjenadi, R., G. Micolau, J. Postel-Pellerin, R. Laffont, J. L. Ogier, F. Lalande y J. Melkonian. "Fast extraction of extrinsic cells in a NVM array after retention under gate stress". En 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135222.
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