Literatura académica sobre el tema "Er luminescence"
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Artículos de revistas sobre el tema "Er luminescence"
Gao, Dangli, Jie Gao, Feng Gao, Qingqing Kuang, Yong Pan, Yafei Chen y Zhengwei Pan. "Quintuple-mode dynamic anti-counterfeiting using multi-mode persistent phosphors". Journal of Materials Chemistry C 9, n.º 46 (2021): 16634–44. http://dx.doi.org/10.1039/d1tc04568g.
Texto completoIshikawa, Yukari, Junichi Niitsuma, Shigeru Tanaka, Dai Nezaki, Mitsuhiro Okamoto, Masashi Yamashita, Takashi Sekiguchi y Noriyoshi Shibata. "Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films". Key Engineering Materials 301 (enero de 2006): 189–92. http://dx.doi.org/10.4028/www.scientific.net/kem.301.189.
Texto completoMoskvitina, E. A., V. A. Vorobiev y B. M. Bolotin. "Study of Luminescent Properties of CaNb2O6:Yb, Er, Tm". Herald of the Bauman Moscow State Technical University. Series Natural Sciences, n.º 3 (90) (junio de 2020): 78–87. http://dx.doi.org/10.18698/1812-3368-2020-3-78-87.
Texto completoWang, Zhuo, Guotao Sun, Jiabo Chen, Yao Xie, Hong Jiang y Lining Sun. "Upconversion Luminescent Humidity Sensors Based on Lanthanide-Doped MOFs". Chemosensors 10, n.º 2 (7 de febrero de 2022): 66. http://dx.doi.org/10.3390/chemosensors10020066.
Texto completoPan, Er, Gongxun Bai, Yutao Peng, Liang Chen y Shiqing Xu. "Promoting luminescence of Yb/Er codoped ferroelectric composite by polarization engineering for optoelectronic applications". Nanophotonics 8, n.º 12 (17 de septiembre de 2019): 2215–23. http://dx.doi.org/10.1515/nanoph-2019-0230.
Texto completoMar’ina, Ul’ana A., Viktor A. Vorob’ev y Alexandr P. Mar’in. "CaSnO 3: Yb 3+, Er 3+, Ho 3+ system synthesis and study of its luminescence under IR excitation". Modern Electronic Materials 4, n.º 2 (1 de junio de 2018): 71–75. http://dx.doi.org/10.3897/j.moem.4.2.38545.
Texto completoOfuchi, H., D. Kawamura, J. Tsuchiya, N. Matsubara, M. Tabuchi, Y. Fujiwara y Y. Takeda. "Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS". Journal of Synchrotron Radiation 5, n.º 3 (1 de mayo de 1998): 1061–63. http://dx.doi.org/10.1107/s0909049597018566.
Texto completoRonzhin, N., E. Posokhina, O. Mogilnaya, A. Puzyr, J. Gitelson y V. Bondar. "CYTOCHROME P450 SYSTEM MAY BE INVOLVED IN THE LIGHT EMISSION OF HIGHER FUNGI". Russian Journal of Biological Physics and Chemisrty 7, n.º 2 (15 de noviembre de 2022): 320–24. http://dx.doi.org/10.29039/rusjbpc.2022.0522.
Texto completoLuo, Jianxin, Chunyan Zhang, Changhong Li, Hanxiang Hu y Bonian Hu. "Multiplicate sensitization of novel near-infrared luminescent linear copolymers based on Er, Nd and Yb-complexes". RSC Adv. 4, n.º 101 (2014): 57393–401. http://dx.doi.org/10.1039/c4ra08093a.
Texto completoCarl, Frederike, Leonie Birk, Bettina Grauel, Monica Pons, Christian Würth, Ute Resch-Genger y Markus Haase. "LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals". Nano Research 14, n.º 3 (16 de octubre de 2020): 797–806. http://dx.doi.org/10.1007/s12274-020-3116-y.
Texto completoTesis sobre el tema "Er luminescence"
Chen, Thomas D. (Thomas Duhwa). "Energy transfer and luminescence enhancement in Er-doped silicon". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9536.
Texto completoAlso issued in pages.
Includes bibliographical references (leaves 143-152).
Er-doped silicon (Si:Er) is a promising light emitting material for silicon microphotonics. A study of Si:Er excitation/de-excitation mechanisms and luminescence enchancement is presented in this thesis. A model based on impurity Auger and nonradiative nmltiphonon transitions (NRl\·IPT) is shown to describe the temperature quenching of the photoluminescence (PL) intensity from 4K to 300K This model asserts that the nonradiative Auger process is mainly responsible for the temperature quenching below lOOK, and NRMPT backtransfer process is mainly responsible for the temperature quenching above lOOK. Junction photocufrei1t · spectmscopy (JPCS) measurements confirmed the existence of a backtransfer mechanism that grows with temperature in accordance to the model. In order to circumvent the onset of nonradiative transitions at higher temperatures, spontaneous emission enhancement in nrnltilayer Si/Si02 microcavities was explored as a means to increase the PL intensity. Because multilayer microcavity structures cannot be constructed using single crystal silicon, Er-doped polysilicon (poly-Si:Er) was developed as a light emitting material for these microcavities. The poly-Si:Er material exhibited a luminescence very similar to that of Er in single crystal silicon. By crystallizing poly-Si:Er from amorphous material and performing a post-anneal hydrogenation, a reasonably high PL intensity, which was limited by the excitation power, was attained. Microacavities with poly-Si:Er were fabricated and measured for the first time. Cavity quality factors of -60-300 were measured, and an Er enhancement of -20x was observed. A -lOx enhancement of a small background emission from the polysilicon was also observed. The observed enhancement factors match well with computed enhancement factors derived from electric field intensity distribution within the microcavity structure. Exploratory work in optical gain from Si:Er waveguides and vertically coupled ring resonntors was conducted. A fiber coupling technique for low temperature waveguide transmission experiments was developed for the gain experiments. The transmission spectrum of a 3-cm long waveguide was measured at temperatures down to 125K. Because the temperature could not be lowered without debonding the fiber, a net gain could not be observed in this particular waveguide. The application of stimulated emission in Si:Er devices is analyzed and discussed.
by Thomas Duhwa Chen.
Ph.D.
ROGARD, STEPHANIE. "Contribution a l'etude de verres fluores dopes a l'erbium : dosage de er#3#+ dans des fibres optiques actives en zblan, mise en evidence de contraintes dans des pzg : er#3#+ evapores". Le Mans, 1997. http://www.theses.fr/1997LEMA1010.
Texto completoChen, Kevin M. (Kevin Ming) 1974. "Electrical breakdown and luminescence from erbium oxide and Er-doped silicon thin films". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9816.
Texto completoHussain, Syed Sajjad. "Elaboration, caractérisation structurale et luminescence de dépots AIN dopés Er obenus par PVD magnétron RF". Thesis, Nancy 1, 2010. http://www.theses.fr/2010NAN10060/document.
Texto completoThe work presented here is a contribution to the study of the photoluminescence (PL) properties of a rare earth ions (Erbium) inserted inside wide gap matrices (AlN) of different morphologies and deposited as thin films. A physical vapour deposition magnetron rf technique has been used to obtain thin layers of aluminium nitride whose crystalline morphologies are ranging from the classical columnar morphology to the nanocrystalline state or amorphous. One shows how, the higher the magnetron power, the larger are the columnar crystallites and how the use of a negative polarization on the silicon substrates allows obtaining nano crystallized layers. Different doping rates (from 0.1 to 6 at. %) have been achieved using a Al+Er composite target.The PL of the Er atom at 1.54 [micro]m has been studied versus the process parameters and so as a function of the different AlN morphologies. It was shown that the maximum of PL emission is achieved for a rate of 1 atomic %. PL intensity was shown to increase with the magnetron power and decrease with the polarization intensity of the substrates. These two results demonstrate that PL intensity is strongly correlated to the matrix morphology. The larger the crystallites, the most efficient are the PL emission allows evidencing the role of the non radiative defects crystalline fields in the crystallites. The role of the defects was confirmed by time resolved photoluminescence measurements and by PL measurements performed on annealed samples or at low temperature. The decrease of PL with temperature is very weak, making this way the material very promising for optoelectronic and photonic applications
LHOMER, CHRISTOPHE. "Proprietes electriques et optiques de terres rares (yb, er) dans les semiconducteurs iii-v. Mecanisme d'excitation de la luminescence". Rennes, INSA, 1991. http://www.theses.fr/1991ISAR0006.
Texto completoNascimento, Cristiane. "Propriétés structurales et optiques de verres et couches minces borates des systèmes TR : Y2O3-Al2O3-B2O3 ET TR:Y2O3-CaO-B2O3 (TR=Nd, Er)". Université Joseph Fourier (Grenoble), 2007. http://www.theses.fr/2007GRE10101.
Texto completoLn this work, we studied the structural and luminescent properties of rare earth (RE) doped amorphous borate materials containing yttrium, where RE = Nd'+, Er'+. For this purpose, bulk glasses and amorphous thin films ofthe systems Y,O, - Al,O, - B,O, (Y ALB) and Y,O, - CaO - B,O, (YCAB) were produced and their properties were investigated by thermal analysis (OTA, OSC, TG), x-ray diffraction, vibration al spectroscopy measurements (Raman and infrared reflectance), photoluminescence and m-lines spectroscopy. The bulk samples were synthesized by the conventional melting/molding method and the multilayer thin films were obtained by spin-coating sol-gel solutions. The Y ALB g1asses exhibited a higher glass transition temperature (Tg) than the YCAB glasses, 707 - 717°C and 613 - 649°C, respectively. The YALB xerogels obtained from the sol-gel solutions also presented a Tg, between 713-716°e. The glasses and thin films presented a complex borate structure, composed by a variety of superstructural units, such as metaborate rings and chains, pyroborate and orthoborate units. We found that the erbium doped glas ses and thin films presented a broad band emission of about 54 - 66 nm for the 411312 , > 4115/2 transition (1530 - 1535 nm). A maximum radiative lifetime of 425 Jls was obtained for the less doped glass samples (0,1 mol%). The neodymium doped glasses also presented a large bandwidth (38 nm), larger than values found for phosphate glasses (21-25 nm). The m-lines spectroscopy showed that the erbium glassy thin films behave as planar monomode waveguides when deposited on silica substrates, and the obtained refraction indices were about 1,59 - 1,65
Ma, Lidong. "Investigation of multicolored and white light emission from IR-excited nano-particles:". Thesis, Boston College, 2021. http://hdl.handle.net/2345/bc-ir:109229.
Texto completoThesis advisor: Pradip Bakshi
The search for multicolored light produced by some IR laser-excited luminescent nano-powders has revealed, for laser power exceeding a threshold value, the emission of white light (WL) with black-body characteristics. I am directing my research to the study of the physical parameters that may influence the threshold power of the laser and the efficiency of the WL emission. A typical compound that I will investigate will consist of nano-powders of SrZrO3 doped with Yb. The parameters of relevance may include Yb concentration, pressure, temperature, size of nano-crystals, exciting power and wavelength of the laser, dynamical parameters such as decay and build-up patterns. The aim of my research will be both theoretical and experimental: theoretical for I will try to uncover the mechanism of the WL production and experimental for the possible application as efficient light sources of systems similar to the ones that I will investigate (oxide nano-powders doped with lanthanide or transition metal ions). The “new” light sources in the market (fluorescence lights sources, and LED lamps) beat the Edison bulbs in efficiency, but they do not produce the black-body emission of the Edison bulbs that is most pleasing to the eye. The search for efficient black-body type of sources is still on and we want to be a part of it
Thesis (PhD) — Boston College, 2021
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
Milori, Debora Marcondes Bastos Pereira. "Caracterização do LiNbO3:Er+3 como meio ativo para lasers de estado sólido através dos espectros de absorção/emissão polarizada e medida dos tempos de vida de luminescência". Universidade de São Paulo, 1989. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-19052009-104534/.
Texto completoThis work consists in the optical characterization of LiNbO3:Er3+ single crystals, aiming to verify the possibility of this system being an active media for laser. The absorption and emission results were satisfactory, being compatible enough with the theoretical model adopted. The luminescence lifetime of the 4S3/2 - 4I15/2 e 4F9/2 - 4I15/2 transitions was measured at the ambient and liquid nitrogen temperature, showing that they are possible candidates for laser transitions. The behavior of the undesirable OH- and Fe2+ impurities was also studied through thermal treatment. The control of these concentrations was done using the EPR and optical absorption techniques and the results showed it is possible to eliminate such impurities in a totally controlled way.
Klier, Dennis Tobias [Verfasser] y Michael Uwe [Akademischer Betreuer] Kumke. "Upconversion luminescence in Er-codoped NaYF4 nanoparticles : fundamental photophysics and optimization for life science applications / Dennis Tobias Klier ; Betreuer: Michael Uwe Kumke". Potsdam : Universität Potsdam, 2016. http://d-nb.info/1218401028/34.
Texto completoMorais, Evandro Augusto de [UNESP]. "Fotoluminescência e transporte elétrico em 'SNO IND. 2' dopado com os íons terras-raras 'ER POT. 3'/' e 'EU POT. 3'/'". Universidade Estadual Paulista (UNESP), 2008. http://hdl.handle.net/11449/100909.
Texto completoCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Através do processo sol-gel, foi sintetizado o material semicondutor dióxido de estanho ('SNO IND. 2') dopado com as terras-raras 'ER' e 'EU', sendo obtidas amostras na forma de xerogéis (pós) e filmes finos, neste último caso pela técnica de emersão. A introdução das terras-raras provoca desordens estruturais no material e impede o crescimento dos cristalitos, cujo tamanho varia entre 5-20NM, devido a segregação dos terras-raras na superfície das partículas, o que está relacionado a sua baixa solubilidade em 'SNO IND. 2'. A análise das propriedades ópticas mostra emissão eficiente dos íons terras-raras 'ER POT. 3'/' e 'EU POT. 3'/' quando introduzidos nesta matriz. A emissão é confirmada tanto por excitação direta destes íons, como por processos de transferência de energia, tanto correspondente ao bandgap da matriz como a transição 'INTPOT. 2 F IND. 7/2 de íon 'YB POT. 3'/' em amostras codopadas com 'ER POT. 3'/' e 'YB POT. 3'/'. A análise por fotoluminescência permite distinguir terras-raras em sítios substitucionais a 'SN POT. 4'/' ou em centros na superfície das partículas. A investigação das propriedades elétricas mostra um aumento de resistividade de até seis ordens de magnitude em relação a filmes não dopados. Isto está relacionado com o carácter aceitador de íons 'ER POT. 3'/' e 'EU POT. 3'/' em 'SNO IND. 2', que é naturalmente tipo-N, oque acarreta alta compensação de carga e também barreiras de potencial intergranulares que diminuem a mobilidade eletrônica. Foi investidada também a captura de elétrons fotoexcitados por centros de 'ER' e 'EU' termicamente ativados. À medida que se aumenta a temperatura e a concentração de 'ER' e 'EU', maior é a taxa de captura. Do modelo proposto, foram obtidos parâmetros importantes, como de captura devido aos defeitos dominantes.
The semiconductor material tin dioxide ('SNO IND. 2') has been produced by the sol-gel process, doped with the rare-earth 'ER' and 'EU'. Samples are obtained in the from of xerogels (powder) and thin films, in this latter case by the dip-coating technique. The incorporation of rare-earth ions promotes structural disorder in the material, which avoids the crystallite growth due to segregation of rare-earth ions to the surface, which is related to the low solubility in the 'SNO IND. 2' matrix. The crystallite size is in the range 5-20NM. Analysis of optical properties shows efficient emission of rare-earth ions 'ER POT. 3'/' and 'EU POT. 3'/', whem introduced in this matrix. This emission is confirmed either by direct excitation of ions, as well as by energy transfer processes, corresponding to the matrix bandgap or to the transition 'INTPOT. 2 F IND. 7/2 of íon 'YB POT. 3'/' ion in samples codoped with 'ER POT. 3'/' and 'YB POT. 3'/'. Photoluminescence spectra allow distinguishing rare-earth ions in substitutional sites of 'SN' and particles surface located centers. Investigation of electrical properties show a resitivity increase up to 6 orders of magnitude compared to undoped films. This behavior is related with the acceptor like character of 'ER POT. 3'/' and 'EU POT. 3'/' in 'SNO IND. 2', which is naturally a N-type material, leading to a high charge compensation degree and also to intergrain potential barriers that decrease the electronic mobility. It has also been investigated the capture of photogenerated electrons by ER' and 'ER' thermally activated centers. When the temperature is raised or the ER' or 'EU' concentratin is increased the capture ratebecomes faster. From a proposed model, some very relevent parameters are obtained, scu as the capture barrier due to the dominating defect.
Capítulos de libros sobre el tema "Er luminescence"
Liu, Min, Sheng Wu Wang, Jian Zhang, Li Qiong An y Li Dong Chen. "Preparation and Upconversion Luminescence of YAG: Er3+ Powders". En High-Performance Ceramics III, 517–20. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-959-8.517.
Texto completoTakahei, K., P. Whitney, H. Nakagome y K. Uwai. "Photo- and Electro-Luminescence of Rare Earth (Er, Yb)-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition". En Springer Proceedings in Physics, 382–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_78.
Texto completoIshikawa, Yukari, Junichi Niitsuma, Shigeru Tanaka, Dai Nezaki, Mitsuhiro Okamoto, Masashi Yamashita, Takashi Sekiguchi y Noriyoshi Shibata. "Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films". En Electroceramics in Japan VIII, 189–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-982-2.189.
Texto completoOh, Jae Suk, Sang Il Seok y Ha Kyun Jung. "Luminescent Properties in NIR Region of LaPO4:Er/LaPO4 Core/Shell Nanoparticles". En Solid State Phenomena, 471–74. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.471.
Texto completoCheng, Chang Hua, You Na Wu y Zhao Xian Xiong. "Preparation of Upconversion Luminescent NaYF4 Co-Doped with Yb3+/Er3+ via Hydrothermal Synthesis". En High-Performance Ceramics V, 394–97. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.394.
Texto completoActas de conferencias sobre el tema "Er luminescence"
Wang, Junzhuan, Zhuoqiong Shi, Yi Shi, Zhensheng Tao, Lin Pu, Lijia Pan, Rong Zhang, Youdou Zheng y Fang Lu. "Broad excitation of Er luminescence in Er-doped HfO2 films". En 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734726.
Texto completoPark, Nae-Man, Tae-Youb Kim, Sang Hyeob Kim, Gun Yong Sung, Baek-Hyun Kim, Seong-Ju Park, Kwan Sik Cho, Jung H. Shin, Jung-Kun Lee y Michael Nastasi. "Luminescence of Er-doped amorphous silicon quantum dots". En Integrated Optoelectronic Devices 2004, editado por Diana L. Huffaker y Pallab Bhattacharya. SPIE, 2004. http://dx.doi.org/10.1117/12.528148.
Texto completoFujiwara, Y., T. Ito, H. Ofuchi, J. Tsuchiya, A. Tanigawa, M. Tabuchi y Y. Takeda. "Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP". En Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711615.
Texto completoSobolev, Nikolai A., Oleg V. Aleksandrov, Mikhail S. Bresler, Oleg B. Gusev, Pavel E. Khakuashev, Yurii A. Kudryavtsev, Miroslav I. Makoviichuk et al. "Influence of impurities on luminescence of Er-doped silicon structures". En Photonics West '97, editado por E. F. Schubert. SPIE, 1997. http://dx.doi.org/10.1117/12.271042.
Texto completoWang, X. J., H. Isshiki, T. Kimura y Z. Zhou. "Enhanced Er3+ luminescence of Er silicate through Y and Yb co-doping". En 2009 6th IEEE International Conference on Group IV Photonics (GFP). IEEE, 2009. http://dx.doi.org/10.1109/group4.2009.5338287.
Texto completoLaia, A. S., A. C. Brandão-Silva, M. A. Gomes, Z. S. Macedo, M. E. G. Valério, J. J. Rodrigues y M. A. R. C. Alencar. "Er-doped Y2O3 nanocrystals for optical thermometry within biological windows". En Latin America Optics and Photonics Conference. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/laop.2022.w1c.6.
Texto completoRomanishkin, I. D., V. Yu Proydakova, S. V. Kuznetsov y D. V. Pominova. "Yb-Er-doped nanoparticles synthesis temperature effect on upconversion luminescence lifetime". En 2020 International Conference Laser Optics (ICLO). IEEE, 2020. http://dx.doi.org/10.1109/iclo48556.2020.9285676.
Texto completoAndreev, B. A., Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, E. N. Morozova, V. B. Shmagin, M. V. Stepikohova y A. N. Yablonskii. "Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy". En XI Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, editado por Alexander A. Kaplyanskii, Boris Z. Malkin y Sergey I. Nikitin. SPIE, 2002. http://dx.doi.org/10.1117/12.475319.
Texto completoToudert, J., S. Nunez-Sanchez, M. Jimenez de Castro, R. Sema, J. Cortes, C. N. Afonso, Y. Luo, C. Borca y P. Hoffmann. "Efficient luminescence response from nanoscale controlled Er-Yb distribution in Al2O3 waveguides". En 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference. IEEE, 2007. http://dx.doi.org/10.1109/cleoe-iqec.2007.4386173.
Texto completoTakahei, Kenichiro y Akihito Taguchi. "Efficient Er Luminescence Centers Formed in GaAs by MOCVD with Oxygen Codoping". En 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.d-2-6.
Texto completo