Bibliografías temáticas / Epitaxial Deposition

Literatura académica sobre el tema "Epitaxial Deposition"

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Publicado: 6 de septiembre de 2023

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Artículos de revistas sobre el tema "Epitaxial Deposition"

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Wang, Wenliang, Yulin Zheng, Yuan Li, Xiaochan Li, Liegen Huang, Zhuoran Li, Zhenya Lu y Guoqiang Li. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates". CrystEngComm 19, n.º 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.

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High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.
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Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello y Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering". Journal of Materials Research 7, n.º 10 (octubre de 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.
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Duan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng y Hui Shen. "APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells". Advanced Materials Research 295-297 (julio de 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.

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We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO2 layers of the pretreated substrates.
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M C Ávila, Renan, Roney C da Silva y Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition". Physics & Astronomy International Journal 7, n.º 2 (3 de abril de 2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.

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To achieve the epitaxial thin films deposition, it is necessary to use properly oriented substrates, with or without buffer layers, matching the lattice parameters of the epitaxial thin film we want to grow. In this work, the deposition of epitaxial Bi2SiO5(200) and BiFeO3(001) thin films on Si(001) substrates by pulsed electron deposition (PED) technique is reported without special substrate preparation. The deposition of epitaxial BSO(200) and T-BFO(001) directly onto Si(001) substrates during a single target deposition process is relevant and presents enormous potential to reduce costs and improve practicality, interface quality and BFO integration efficiency with Si(001) substrates.
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Wijaranakula, W., P. M. Burke, L. Forbes y J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon". Journal of Materials Research 1, n.º 5 (octubre de 1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.

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Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.
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Chung, Jun Ki, Won Jeong Kim, Sung Gap Lee y Cheol Jin Kim. "Growth and Characterization of BaZrO3 Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate". Key Engineering Materials 336-338 (abril de 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.

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Superconducting YBa2Cu3O7-δ(YBCO) films were grown on MgO single crystalline substrates using a BaZrO3 (BZO) buffer layer deposited by a pulsed laser deposition (PLD). Deposition condition has been optimized to obtain good epitaxial BZO film followed by deposition of YBCO superconducting films. The crystallinity and microstructure of epitaxial YBCO/ BZO/ MgO (00l) films were investigated by a two-dimensional x-ray diffraction and a field emission scanning electron microscope. The in-plane (φ-scan) measurements for the BZO films (200 ~ 500 nm thick) grown on MgO substrates revealed a narrow full width half maximum (0φ = 2o). The XRD results exhibited that YBCO films with a BZO buffer layer were well oriented in the [00l] direction perpendicular to the substrate surface. The BZO films also showed homogeneous and dense surface morphologies. By the deposition of a subsequent BZO buffer layer, YBCO was grown epitaxially on MgO with results showing a critical current density (Jc) of ~ 3.3 × 106 A/cm2 and a critical temperature (Tc) of 86 K.
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Zhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk y John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films". Journal of Materials Research 9, n.º 6 (junio de 1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.

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MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.
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Duan, Ying Wen. "Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition". Advanced Materials Research 936 (junio de 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.

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Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.
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Lin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin y Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template". RSC Advances 6, n.º 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.

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Li, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen y Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition". Modern Physics Letters B 11, n.º 02n03 (30 de enero de 1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.

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c-axis-oriented BaTiO 3 :Ce/YBa 2 Cu 3 O 7-x bilayers have been epitaxially grown on the SrTiO 3(100) substrates by pulsed laser deposition. The crystal structure and epitaxial orientation of the films have been analyzed by the XRD θ/2θ, ω and ϕ scans, and the results indicate that the bilayer thin films have high degree of c-axis-oriented epitaxial crystalline structure. The surface morphology of the thin films was revealed by scanning electron microscopy (SEM). The ferroelectricity of the BaTiO 3 :Ce thin films was verified by the P-E hysteresis loop.
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Tesis sobre el tema "Epitaxial Deposition"

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Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition". Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-164106.

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This thesis deals with the synthesis and characterization of Ge-Te-Sb (GST) thin films. The films were deposited using a Pulsed Laser Deposition (PLD) method and mainly characterized with XRD, SEM, AFM and TEM. For amorphous and polycrystalline films, un-etched Si(100) was used. The amorphous films showed a similar crystallization behavior as films deposited with sputtering and evaporation techniques. When depositing GST on un-etched Si(100) substrates at elevated substrate temperatures (130-240°C), polycrystalline but highly textured films were obtained. The preferred growth orientation was either GST(111) or GST(0001) depending on if the films were cubic or hexagonal. Epitaxial films were prepared on crystalline substrates. On KCl(100), a mixed growth of hexagonal GST(0001) and cubic GST(100) was observed. The hexagonal phase dominates at low temperatures whereas the cubic phase dominates at high temperatures. The cubic phase is accompanied with a presumed GST(221) orientation when the film thickness exceeds ~70 nm. Epitaxial films were obtained with deposition rates as high as 250 nm/min. On BaF2(111), only (0001) oriented epitaxial hexagonal GST films are found, independent of substrate temperature, frequency or deposition background pressure. At high substrate temperatures there is a loss of Ge and Te which shifts the crystalline phase from Ge2Sb2Te5 towards GeSb2Te4. GST films deposited at room temperature on BaF2(111) were in an amorphous state, but after exposure to an annealing treatment they crystallize in an epitaxial cubic structure. Film deposition on pre-cleaned and buffered ammonium fluoride etched Si(111) show growth of epitaxial hexagonal GST, similar to that of the deposition on BaF2(111). When the Si-substrates were heated directly to the deposition temperature films of high crystal-line quality were obtained. An additional heat treatment of the Si-substrates prior to deposition deteriorated the crystal quality severely. The gained results show that PLD can be used as a method in order to obtain high quality epitaxial Ge-Sb-Te films from a compound target and using high deposition rates.
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Ryu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /". free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.

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Ye, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source". Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.

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Woo, Juhyun. "Growth of epitaxial zirconium carbide layers using pulsed laser deposition". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013064.

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Vasilic, Rastko. "Epitaxial growth by monolayer restricted galvanic displacement". Diss., Online access via UMI:, 2006.

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Stallcup, Richard E. "Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films". Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2446/.

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Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and it was found that it was highly temperature dependent. Etching with a diamond sample temperature of 200° C produced (100) surfaces that are atomically rough with no large pits, indicating that the hydrogen etch was isotropic at 200° C. Atomic hydrogen etching of the surface with a sample temperature of 500° C produced etch-pits and vacancy islands indicating an anisotropic etch at 500° C. With a sample temperature of 1000° C during the hydrogen etch, the (100) surface was atomically smooth with no pits and few single atomic vacancies, but with vacancy rows predominantly in the direction of the dimer rows, indicating that the 1000° C etch was highly anisotropic. Raman spectroscopy was used as a temperature probe, and for determining film quality.
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Zaia, Gilberto Vitor. "Epitaxial growth of Si and 3C-SiC by chemical vapor deposition". [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966630424.

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Nutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena". Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.

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Fuel cells as green and sustainable energy sources are at the heart of future Hydrogen Economy. Current research is focused on creating highly active, stable and low content Pt catalysts to improve fuel cell performance up to standards suitable for commercialization. The development of bimetallic Pt structures is the most promising route for achieving this goal. Besides the lower-noble metal content, combination of Pt with other metal at the nano-scale .can result in enhancement of catalytic activity due to the combination of geometric and electronic effects. The main aim of this work is the development of a surface limited redox replacement (SLRR) protocol for the design of epitaxial Pt-films with atomic scale control of the structure. SLRR exploits underpotentially deposited (UPD) layer as sacrificial layer that is replaced by more-noble Pt through a surface-controlled limited red-ox (galvanic) reaction. Different from previously developed SLRR protocols this work explores the one-cell configuration setup as an alternative to improve the efficiency and quality of the growth. The conditions for growth have been optimized and monitored with automated control of the SLRR cycles. The successful growth of Pt films on Au has been demonstrated for SLRR growth via Pb UPD. The electrochemical characterisation showed that using Pb UPD as sacrificial layer produces epitaxial Pt films of high quality with no significant roughness evolution up to 10 layers. Scanning tunnelling microscopy (STM) examination of the morphology has shown that Pt was deposited in clusters of 5-10 nm size, homogeneously and uniformly distributed over the surface. Electrochemical quartz crystal microbalance (EQCM) showed high deposition , yield and the Pt(II):Pb replacement stoichiomentric ratio higher than expected 1 : 1, suggesting an extra reduction power present in the system. The compositional analysis of Pt layers grown by SLRR suggests incorporation of minimum 4 at% of Pb. The SLRR protocol for the homoepitaxial growth of Pt thin films using adsorbed H i.e. under potentially deposited H (H-UPD) has been developed. This work presents first application of the SLRR protocol using a nonmetal UPD system. EQCM experiments demonstrated steady displacement kinetics and a yield equal to the expected stoichiometric Pt(II):H exchange ratio (1 :2). Electrochemical and STM characterization of Pt films showed that the growth via SLRR of H-UPD results in increase of the surface roughness with the number of replacement steps. The roughness of SLRR deposited Pt films has been compared with films grown in the same solution at two constant overpotentials: with and without adsorbed H floating on the surface. The results showed clear advantages of using . the SLRR of H-UPD approach which generated films with two times lower roughness and better quality then the ones grown potentiostatically. The generality of the SLRR approach using H-UPD is validated by growth of Pt films on Pd ultrathin films on Au. The Pt films of well-defined thickness and structure grown by SLRR of Pb UPD have been used in a fundamental study of Pt dissolution during formic acid oxidation (FAO). A quantitative analysis of long term durability tests of Pt films has been conducted by potential cycling over an extended potential range. Direct proportionality between overall life and thickness of the catalyst has been observed. The characteristic stages of the activity decay were correlated with the characteristic electrochemical behaviour during FAO and the surface morphology examined by the atomic force microscopy. An average Pt dissolution rate of 1.90±O.33 ng.cm-2.cycle-1 has been determined during FAO which . was almost four times faster than the rate under the same conditions in the background solution. This study suggests that Pt dissolution mechanism during FAO is influenced in by reaction intermediates and processes on the surface.
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Gower, Aaron E. (Aaron Elwood). "Integrated model-based run-to-run uniformity control for epitaxial silicon deposition". Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16787.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.
Also available online at the MIT Theses Online homepage
Includes bibliographical references (p. 241-247).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under the pressure of economic forces and product performance requirements. This thesis addresses these issues and describes the concept of an "Equipment Cell," which integrates sensors and data processing software around an individual piece of semiconductor equipment. Distributed object technology based on open standards is specified and utilized for software modules that analyze and improve semiconductor equipment processing capabilities. A testbed system for integrated, model-based, run-to-run control of epitaxial silicon (epi) film deposition is developed, incorporating a cluster tool with a single-wafer epi deposition chamber, an in-line epi film thickness measurement tool, and off-line thickness and resistivity measurement systems. Automated single-input-single-output, run-to-run control of epi thickness is first demonstrated. An advanced, multi-objective controller is then developed (using distributed object technology) to provide simultaneous epi thickness control on a run-to-run basis using the in-line sensor, as well as combined thickness and resistivity uniformity control on a lot-to-lot basis using off-line thickness and resistivity sensors.
(cont.) Control strategies are introduced for performing combined run-to-run and lot-to-lot control, based on the availability of measurements. Also discussed are issues involved with using multiple site measurements of multiple film characteristics, as well as the use of time-based inputs and rate-based models. Such techniques are widely applicable for many semiconductor processing steps.
by Aaron Elwood Gower-Hall.
Ph.D.
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Yamaguchi, Iwao. "Preparation of epitaxial oxide films on sapphire substrates by metal organic deposition". 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/124565.

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Libros sobre el tema "Epitaxial Deposition"

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J, Bachmann Klaus y United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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J, Bachmann Klaus y United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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J, Bachmann Klaus y United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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Ionized-cluster beam deposition and epitaxy. Park Ridge, N.J., U.S.A: Noyes Publications, 1988.

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Thin-film deposition: Principles and practice. New York: McGraw-Hill, 1995.

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Fischer, Roland A. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Berlin: Springer, 2010.

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Texas Engineering Extension Service StaffTEEX. Epitaxial Deposition. TEEX/Technology and Economic Development, 2001.

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The 2006-2011 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. Icon Group International, Inc., 2005.

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Parker, Philip M. The 2007-2012 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. ICON Group International, Inc., 2006.

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Hogberg, Hans. Low-Temperature Deposition of Epitaxial Transition Metal Carbide Films and Superlattices Using C60 As Carbon Source. Uppsala Universitet, 1999.

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Capítulos de libros sobre el tema "Epitaxial Deposition"

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Lange, Fred. "Epitaxial Films". En Chemical Solution Deposition of Functional Oxide Thin Films, 383–405. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_16.

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Craciun, V. y R. K. Singh. "Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films". En Atomistic Aspects of Epitaxial Growth, 511–24. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_40.

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Sammelselg, V., J. Karlis, A. Kikas, J. Aarik, H. Mändar y T. Uustare. "Nanoscopic Study of Zirconia Films Grown by Atomic Layer Deposition". En Atomistic Aspects of Epitaxial Growth, 583–91. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_46.

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Nishino, S., K. Takahashi, Y. Kojima y J. Saraie. "Epitaxial Growth of 6H-SiC by Chemical Vapor Deposition". En Springer Proceedings in Physics, 363–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84402-7_54.

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Bhat, Ishwara B. "Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition". En Springer Handbook of Crystal Growth, 939–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_28.

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Boer, W. B. "Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe". En Advances in Rapid Thermal and Integrated Processing, 443–63. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-015-8711-2_16.

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Pardo, J. A., J. Santiso, C. Solis, G. Garcia y A. Figueras. "Pulsed Lased Deposition of MIEC Sr4Fe6O13±δ Epitaxial Thin Films". En Mixed Ionic Electronic Conducting Perovskites for Advanced Energy Systems, 265–72. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2349-1_25.

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Arthur, John R. "Physical and Chemical Methods for Thin-Film Deposition and Epitaxial Growth". En Specimen Handling, Preparation, and Treatments in Surface Characterization, 239–93. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/0-306-46913-8_8.

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Ponczak, Brian H., James D. Oliver, Soon Cho y Gary W. Rubloff. "In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition". En Materials Science Forum, 121–24. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.121.

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Yamada, Isao. "Film Deposition with Cluster Beams: An Alternate Path to Epitaxial, Crystalline Films". En Physics and Chemistry of Finite Systems: From Clusters to Crystals, 1193–202. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-2645-0_164.

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Actas de conferencias sobre el tema "Epitaxial Deposition"

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Wang, Zhan Jie, Li Jun Yan, Hiroyuki Kokawa y Ryutaro Maeda. "In situ deposition of epitaxial PZT films by pulsed laser deposition". En Smart Materials, Nano-, and Micro-Smart Systems, editado por Alan R. Wilson. SPIE, 2004. http://dx.doi.org/10.1117/12.581399.

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Muenchausen, Ross E. "Pulsed laser deposition: prospects for commercial deposition of epitaxial thin films". En High-Power Laser Ablation, editado por Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321616.

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Susto, Gian Antonio, Alessandro Beghi y Cristina De Luca. "A Predictive Maintenance System for Silicon Epitaxial Deposition". En 2011 IEEE International Conference on Automation Science and Engineering (CASE 2011). IEEE, 2011. http://dx.doi.org/10.1109/case.2011.6042421.

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Yuehu Wang, Yuming Zhang, Yimen Zhang, Renxu Jia y Da Chen. "SiC epitaxial layers grown by chemical vapor deposition". En 2008 8th International Workshop on Junction Technology (IWJT '08). IEEE, 2008. http://dx.doi.org/10.1109/iwjt.2008.4540053.

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Yihwan Kim, Yi-Chiau Huang, Errol Sanchez y Schubert Chu. "Thermal chemical vapor deposition of epitaxial germanium tin alloys". En 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874699.

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Darwish, Abdalla, Simeon Wilson y Brent Koplitz. "Pulsed laser deposition of epitaxial BaFeO 3 thin films". En SPIE Photonic Devices + Applications, editado por Shizhuo Yin y Ruyan Guo. SPIE, 2011. http://dx.doi.org/10.1117/12.914083.

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Eden, J. G., V. Tavitian y C. J. Kiely. "Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition". En 1988 Los Angeles Symposium--O-E/LASE '88, editado por Peter P. Chenausky, Roland A. Sauerbrey y James H. Tillotson. SPIE, 1988. http://dx.doi.org/10.1117/12.944386.

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Alexandrov, Dimiter, Jonny Tot, Robert Dubreuil, Francisco Miguel Morales, Jose Manuel Manuel, Juan Jesus Jimenez, Bertrand Lacroix et al. "Low temperature epitaxial deposition of GaN on LTCC substrates". En 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA). IEEE, 2017. http://dx.doi.org/10.1109/wipda.2017.8170501.

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Sorokin, Michael V., Ishaq Ahmad, Anatole N. Khodan y Samson O. Aisida. "Pulsed laser deposition of epitaxial films: : phase-field description". En 2022 19th International Bhurban Conference on Applied Sciences and Technology (IBCAST). IEEE, 2022. http://dx.doi.org/10.1109/ibcast54850.2022.9990074.

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Wu, Sudong, Makoto Kambara y Toyonobu Yoshida. "Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition". En Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.015068.

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Informes sobre el tema "Epitaxial Deposition"

1

Hamblen, David G., David B. Fenner, Peter A. Rosenthal, Joseph Cosgrove y Pang-Jen Kung. Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1995. http://dx.doi.org/10.21236/ada360082.

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Taga, N., M. Maekawa, Y. Shigesato, I. Yasui y T. E. Haynes. Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), mayo de 1996. http://dx.doi.org/10.2172/257414.

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Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer y E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, diciembre de 1997. http://dx.doi.org/10.21236/ada338206.

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Davis, R. F., H. H. Lamb y S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, junio de 1998. http://dx.doi.org/10.21236/ada353949.

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Bailey, William. MBE Deposition of Epitaxial Fe1-xVx Films for Low-Loss Ghz Devices; Atomic-Scale Engineering of Magnetic Dynamics. Fort Belvoir, VA: Defense Technical Information Center, agosto de 2006. http://dx.doi.org/10.21236/ada459301.

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Newman, A., P. S. Krishnaprasad, S. Ponczak y P. Brabant. Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor. Fort Belvoir, VA: Defense Technical Information Center, enero de 1998. http://dx.doi.org/10.21236/ada441006.

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