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Artículos de revistas sobre el tema "Enhancement Mode HEMTs"

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Autor: Grafiati
Publicado: 6 de septiembre de 2023

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1

Wang, Chih Hao, Liang Yu Su, Finella Lee y Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices". Applied Mechanics and Materials 764-765 (mayo de 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.
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2

Sohn, Y. J., B. H. Lee, M. Y. Jeong y Y. H. Jeong. "Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs". Electronics Letters 37, n.º 5 (2001): 322. http://dx.doi.org/10.1049/el:20010208.

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3

Chvála, Aleš, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová y Ján Kuzmík. "Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs". Journal of Circuits, Systems and Computers 28, supp01 (1 de diciembre de 2019): 1940009. http://dx.doi.org/10.1142/s0218126619400097.

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This paper presents monolithic integrated InAlN/GaN NAND and NOR logic cells comprising depletion-mode, enhancement-mode and dual-gate enhancement-mode high electron mobility transistors (HEMTs). The designed NAND and NOR logic cells consist of the depletion-mode and enhancement-mode HEMT transistors integrated onto a single die. InAlN/GaN-based NAND and NOR logic cells with good static and dynamic performance are demonstrated for the first time. Calibrated static and dynamic electrophysical models are proposed for 2D device simulations in Sentaurus Device environment. Sentaurus Device mixed-mode setup interconnects the transistors to NAND and NOR logic circuits which allows analysis and characterization of the devices as a complex system. Circuit models of depletion-mode, enhancement-mode and dual-gate HEMTs are designed and calibrated by experimental results and 2D device simulations. The proposed models exhibit highly accurate results.
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4

Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu y Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate". Materials Science Forum 1014 (noviembre de 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.

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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described. The research status and problems of E-mode AlGaN/GaN HEMT devices fabricated by p-GaN gate technology are summarized. The advances of p-GaN gate technology, and focuses on how these research results can improve the power characteristics and reliability of E-mode AlGaN/GaN HEMT by optimizing device structure and improving process technology, are discussed.
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5

Shuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, K. M. Lau y K. J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate". IEEE Transactions on Electron Devices 53, n.º 6 (junio de 2006): 1474–77. http://dx.doi.org/10.1109/ted.2006.873881.

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6

Jia, Shuo, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau y Kevin J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate". physica status solidi (c) 3, n.º 6 (junio de 2006): 2368–72. http://dx.doi.org/10.1002/pssc.200565119.

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7

Eisenbeiser, K., R. Droopad y Jenn-Hwa Huang. "Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates". IEEE Electron Device Letters 20, n.º 10 (octubre de 1999): 507–9. http://dx.doi.org/10.1109/55.791925.

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8

Lee, Jaesun, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S. Flynn y George R. Brandes. "Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate". Solid-State Electronics 47, n.º 11 (noviembre de 2003): 2081–84. http://dx.doi.org/10.1016/s0038-1101(03)00245-4.

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9

Kumar, V., A. Kuliev, T. Tanaka, Y. Otoki y I. Adesida. "High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate". Electronics Letters 39, n.º 24 (2003): 1758. http://dx.doi.org/10.1049/el:20031124.

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10

Liu, Shenghou, Yong Cai, Guodong Gu, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng et al. "Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs". IEEE Electron Device Letters 33, n.º 3 (marzo de 2012): 354–56. http://dx.doi.org/10.1109/led.2011.2179003.

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11

Si, Quan, Hao Yue, Ma Xiaohua, Xie Yuanbin y Ma Jigang. "Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment". Journal of Semiconductors 30, n.º 12 (diciembre de 2009): 124002. http://dx.doi.org/10.1088/1674-4926/30/12/124002.

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12

Ito, M., S. Kishimoto, F. Nakamura y T. Mizutani. "Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer". physica status solidi (c) 5, n.º 6 (mayo de 2008): 1929–31. http://dx.doi.org/10.1002/pssc.200778451.

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13

Tsai, M.-K., S.-W. Tan, Y.-W. Wu, W.-S. Lour y Y.-J. Yang. "Depletion-mode and enhancement-mode InGaP/GaAs -HEMTs for low supply-voltage applications". Semiconductor Science and Technology 17, n.º 2 (11 de enero de 2002): 156–60. http://dx.doi.org/10.1088/0268-1242/17/2/312.

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14

Chen, Chao y Xing Zhao Liu. "Effects of Low-Energy Electron Irradiation on Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors". Advanced Materials Research 774-776 (septiembre de 2013): 876–80. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.876.

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The effects of low energy (1.8 MeV) electron irradiation on enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been reported. When the dose up to 1.1×1016cm-2, the saturation drain current and maximal transconductance of E-mode AlGaN/GaN HEMTs increase after irradiation. However, almost no change of threshold voltage and gate leakage current is observed. The results are explained by the creation of positive charges in the AlGaN layer by ionizing energy loss, especially the creation of N vacancies and Ga vacancies by non-ionizing energy loss. Moreover, low-energy electron irradiation could recover the electron mobility.
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15

Wan, Xin, Oliver K. Baker, Michael W. McCurdy, En Xia Zhang, Max Zafrani, Simon P. Wainwright, Jun Xu et al. "Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs". IEEE Transactions on Nuclear Science 64, n.º 1 (enero de 2017): 253–57. http://dx.doi.org/10.1109/tns.2016.2621065.

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16

Lin, Yueh Chin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang et al. "Enhancement-Mode GaN MIS-HEMTs With LaHfOxGate Insulator for Power Application". IEEE Electron Device Letters 38, n.º 8 (agosto de 2017): 1101–4. http://dx.doi.org/10.1109/led.2017.2722002.

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17

Chang, Li-Cheng, Cheng-Jia Dai y Chao-Hsin Wu. "Threshold Voltage Modulation of Enhancement-Mode InGaAs Schottky-Gate Fin-HEMTs". IEEE Electron Device Letters 40, n.º 4 (abril de 2019): 534–37. http://dx.doi.org/10.1109/led.2019.2902349.

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18

Lu, Yunyou, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li y Kevin J. Chen. "Characterization ofVT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs". physica status solidi (c) 10, n.º 11 (18 de octubre de 2013): 1397–400. http://dx.doi.org/10.1002/pssc.201300270.

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19

Kang, In-Ho, Jung-Hoon Kim, Won-Bae Kim y Jong-In Song. "Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT". Solid-State Electronics 49, n.º 1 (enero de 2005): 19–24. http://dx.doi.org/10.1016/j.sse.2004.07.006.

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20

Lin, Wei-Tse, Wen-Chia Liao, Yi-Nan Zhong y Yue-ming Hsin. "AlGaN/GaN HEMTs with 2DHG Back Gate Control". MRS Advances 3, n.º 3 (26 de diciembre de 2017): 137–41. http://dx.doi.org/10.1557/adv.2017.619.

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ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.
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21

Zhen, Zixin, Chun Feng, Quan Wang, Di Niu, Xiaoliang Wang y Manqing Tan. "Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates". IEEE Transactions on Nuclear Science 68, n.º 9 (septiembre de 2021): 2358–66. http://dx.doi.org/10.1109/tns.2021.3102980.

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22

Lee, Chun-Hsun, Wei-Ren Lin, Yu-Hsuan Lee y Jian-Jang Huang. "Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates". IEEE Transactions on Electron Devices 65, n.º 2 (febrero de 2018): 488–92. http://dx.doi.org/10.1109/ted.2017.2786479.

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23

Yong Cai, Yugang Zhou, K. J. Chen y K. M. Lau. "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment". IEEE Electron Device Letters 26, n.º 7 (julio de 2005): 435–37. http://dx.doi.org/10.1109/led.2005.851122.

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24

Mahajan, A., M. Arafa, P. Fay, C. Caneau y I. Adesida. "Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP". IEEE Transactions on Electron Devices 45, n.º 12 (1998): 2422–29. http://dx.doi.org/10.1109/16.735718.

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25

Chiu, Hsien-Chin, Chia-Hsuan Wu, Ji-Fan Chi, J. I. Chyi y G. Y. Lee. "N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator". Microelectronics Reliability 55, n.º 1 (enero de 2015): 48–51. http://dx.doi.org/10.1016/j.microrel.2014.09.026.

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26

Abbate, C., G. Busatto, A. Sanseverino, D. Tedesco y F. Velardi. "Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit". Microelectronics Reliability 100-101 (septiembre de 2019): 113454. http://dx.doi.org/10.1016/j.microrel.2019.113454.

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27

Chan, Y. J. y M. T. Yang. "Enhancement and depletion-mode AlGaAs/In0.15Ga0.85As HEMTs fabricated by selective ion implantation". Electronics Letters 29, n.º 25 (1993): 2220. http://dx.doi.org/10.1049/el:19931491.

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28

Lei, Jianming, Yangyi Liu, Zhanmin Yang, Yalin Chen, Dunjun Chen, Liang Xu y Jing Yu. "An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices". Micromachines 14, n.º 8 (18 de agosto de 2023): 1633. http://dx.doi.org/10.3390/mi14081633.

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In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted via our extraction circuit based on a double-diode isolation (DDI) method using a high operating frequency of up to 1 MHz and a large drain voltage of up to 600 V; thus, the unique problem of an increase in the dynamic Rdson is presented. Then, the impact of the current operation mode on the on/off transition time is evaluated via a dual-pulse-current-mode test (DPCT), including a discontinuous conduction mode (DCM) and a continuous conduction mode (CCM); thus, the transition time is revised for different current modes. Afterward, the discrepancy between the drain current and the real channel current is qualitative investigated using an external shunt capacitance (ESC) method; thus, the losses due to device parasitic capacitance are also taken into account. After these improvements, the dynamic model will be more compatible for eGaN HEMTs. Finally, the dynamic power losses calculated via this model are found to be in good agreement with the experimental results. Based on this model, we propose a superior solution with a quasi-resonant mode (QRM) to achieve lossless switching and accelerated switching speeds.
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29

Anderson, Travis, Marko Tadjer, Michael Mastro, Jennifer Hite, Karl Hobart, Charles Eddy y Fritz Kub. "Development of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs by Selective Wet Etching". ECS Transactions 28, n.º 4 (17 de diciembre de 2019): 65–70. http://dx.doi.org/10.1149/1.3377101.

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30

Dumka, D. C., H. Q. Tserng, M. Y. Kao, E. A. Beam y P. Saunier. "High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates". IEEE Electron Device Letters 24, n.º 3 (marzo de 2003): 135–37. http://dx.doi.org/10.1109/led.2003.809048.

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31

CAI, Y. "Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage". IEICE Transactions on Electronics E89-C, n.º 7 (1 de julio de 2006): 1025–30. http://dx.doi.org/10.1093/ietele/e89-c.7.1025.

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32

Li, He, Xiao Li, Xiaodan Wang, Xintong Lyu, Haiwei Cai, Yazan M. Alsmadi, Liming Liu, Sandeep Bala y Jin Wang. "Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions". IEEE Transactions on Industry Applications 55, n.º 2 (marzo de 2019): 1807–16. http://dx.doi.org/10.1109/tia.2018.2879289.

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33

Adak, Sarosij, Sanjit Kumar Swain, Hafizur Rahaman y Chandan Kumar Sarkar. "Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs". Superlattices and Microstructures 100 (diciembre de 2016): 306–14. http://dx.doi.org/10.1016/j.spmi.2016.09.025.

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34

Dong, Yan, Zili Xie, Dunjun Chen, Hai Lu, Rong Zhang y Youdou Zheng. "Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs". International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 32, n.º 1 (31 de agosto de 2018): e2482. http://dx.doi.org/10.1002/jnm.2482.

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35

Gao, Tao, Ruimin Xu, Yuechan Kong, Jianjun Zhou, Kai Zhang, Cen Kong, Daqing Peng y Tangsheng Chen. "Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications". physica status solidi (a) 213, n.º 5 (3 de febrero de 2016): 1241–45. http://dx.doi.org/10.1002/pssa.201532805.

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36

Bi, Lan, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai et al. "Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs". Journal of Semiconductors 43, n.º 3 (1 de marzo de 2022): 032801. http://dx.doi.org/10.1088/1674-4926/43/3/032801.

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Abstract Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
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37

Михайлович, С. В., А. Ю. Павлов, К. Н. Томош y Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, n.º 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.

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AbstractA method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl_3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.
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38

Efthymiou, Loizos, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen y Florin Udrea. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs". Energies 10, n.º 3 (21 de marzo de 2017): 407. http://dx.doi.org/10.3390/en10030407.

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39

Chen, K. J., M. Yamamoto, K. Arai, K. Maezawa y T. Enoki. "Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications". Electronics Letters 31, n.º 11 (25 de mayo de 1995): 925–27. http://dx.doi.org/10.1049/el:19950603.

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40

Mahajan, A., P. Fay, C. Caneau y I. Adesida. "High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP". Electronics Letters 32, n.º 11 (1996): 1037. http://dx.doi.org/10.1049/el:19960652.

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41

Kwan, Alex Man Ho y Kevin J. Chen. "A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs". IEEE Electron Device Letters 34, n.º 1 (enero de 2013): 30–32. http://dx.doi.org/10.1109/led.2012.2224632.

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42

Chen, C. H., C. W. Yang, H. C. Chiu y Jeffrey S. Fu. "Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, n.º 2 (marzo de 2012): 021201. http://dx.doi.org/10.1116/1.3680115.

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43

Jatal, Wael, Uwe Baumann, Heiko O. Jacobs, Frank Schwierz y Jörg Pezoldt. "Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates". physica status solidi (a) 214, n.º 4 (24 de febrero de 2017): 1600415. http://dx.doi.org/10.1002/pssa.201600415.

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44

Li, Z., K. Tang, T. P. Chow, M. Sugimoto, T. Uesugi y T. Kachi. "Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs". physica status solidi (c) 7, n.º 7-8 (10 de junio de 2010): 1944–48. http://dx.doi.org/10.1002/pssc.200983460.

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45

Nanjo, Takuma, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki y Naruhisa Miura. "Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer". Japanese Journal of Applied Physics 61, SC (9 de febrero de 2022): SC1015. http://dx.doi.org/10.35848/1347-4065/ac3dca.

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Abstract An extrinsic electron induced by a dielectric (EID) AlGaN/GaN MOS high-electron-mobility transistor (HEMT) on Si substrate was designed and investigated. The EID structure with SiO2 deposition and subsequent high-temperature annealing, which induces two-dimensional electron gases (2DEGs) on fully depleted AlGaN/GaN hetero-epitaxial layers with thin AlGaN barrier layer, was applied to access and drift regions in the HEMT. The fabricated HEMT exhibited enhancement-mode operation with a specific on-resistance of 7.6 mΩ cm2 and a breakdown voltage of over 1 kV. In addition, electron state analysis using hard X-ray photoelectron spectroscopy revealed that changes in the chemical states of Al and energy level lowering at the SiO2/AlGaN interface affect the induction of 2DEG in the EID structure. The proposed HEMTs should become a strong candidate for highly reliable high-power switching devices due to the damage-less fabrication without dry etching or fluorine plasma exposure processes on the semiconductor layers.
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46

Wu, Tian-Li, Shun-Wei Tang y Hong-Jia Jiang. "Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic". Micromachines 11, n.º 2 (3 de febrero de 2020): 163. http://dx.doi.org/10.3390/mi11020163.

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In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (gm)–gate voltage (VG) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive VG. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (VTH) toward an enhancement-mode characteristic.
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47

Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin y Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator". Membranes 11, n.º 10 (23 de septiembre de 2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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Resumen
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.
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48

Lu, Lucas, Guanliang Liu y Kevin Bai. "Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications". CES Transactions on Electrical Machines and Systems 1, n.º 3 (septiembre de 2017): 283–91. http://dx.doi.org/10.23919/tems.2017.8086107.

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49

Shen, Feiyu, Ronghui Hao, Liang Song, Fu Chen, Guohao Yu, Xiaodong Zhang, Yaming Fan, Fujiang Lin, Yong Cai y Baoshun Zhang. "Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability". Applied Physics Express 12, n.º 6 (14 de mayo de 2019): 066501. http://dx.doi.org/10.7567/1882-0786/ab1cfa.

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50

Li, Yuan, Yuanfu Zhao, Alex Q. Huang, Liqi Zhang, Qingyun Huang, Ruiyang Yu, Soumik Sen, Qingxuan Ma y Yunlong He. "Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs". IET Power Electronics 13, n.º 3 (febrero de 2020): 456–62. http://dx.doi.org/10.1049/iet-pel.2019.0540.

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