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Libros sobre el tema "Electronic semiconductor"

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Publicado: 6 de septiembre de 2023

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1

Semiconductor and electronic devices. 3a ed. New York: Prentice-Hall, 1993.

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2

L, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart and Winston, 1991.

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3

L, Grung B., ed. Semiconductor-device electronics. Philadelphia: Holt, Rinehart, and Winston, 1991.

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4

Semiconductor power electronics. New York: Van Nostrand Reinhold, 1986.

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5

1946-, Margaritondo Giorgio, ed. Electronic structure of semiconductor heterojunctions. Milano [Italy]: Jaca Book, 1988.

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6

Margaritondo, Giorgio, ed. Electronic Structure of Semiconductor Heterojunctions. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5.

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7

Mönch, Winfried. Electronic Properties of Semiconductor Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06945-5.

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8

Borris, John P. Semiconductor devices using Electronic Workbench. Englewood Cliffs, N.J: Prentice Hall, 1996.

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9

Semiconductor devices for electronic tuners. New York: Gordon and Breach, 1991.

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10

Winfried, Mönch, ed. Electronic structure of metal-semiconductor contacts. Dordrecht: Kluwer Academic, 1990.

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11

Marie, Xavier y SpringerLink (Online service), eds. Semiconductor Modeling Techniques. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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12

Hozer, Leszek. Semiconductor ceramics. New York: Ellis Horwood, 1994.

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13

Mönch, Winfried, ed. Electronic Structure of Metal-Semiconductor Contacts. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0657-0.

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14

Monch, Winfried. Electronic Structure of Metal-Semiconductor Contacts. Dordrecht: Springer Netherlands, 1990.

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15

S, Brown April, ed. Theory of modern electronic semiconductor devices. New York: John Wiley, 2002.

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16

T, Grahn H., ed. Semiconductor superlattices: Growth and electronic properties. Singapore: World Scientific, 1995.

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17

Jaecklin, André A. Power Semiconductor Devices and Circuits. Boston, MA: Springer US, 1992.

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18

Julian, Serda, ed. Semiconductor manufacturing technology. Upper Saddle River, NJ: Prentice Hall, 2001.

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19

A, Jackson Kenneth y Schröter W, eds. Handbook of semiconductor technology. Weinheim: Wiley-VCH, 2000.

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20

Wolkenstein, T. Electronic Processes on Semiconductor Surfaces during Chemisorption. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3656-7.

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21

Ihn, Thomas. Electronic Quantum Transport in Mesoscopic Semiconductor Structures. New York, NY: Springer New York, 2004. http://dx.doi.org/10.1007/b97630.

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22

Reliability of electronic packages and semiconductor devices. New York: McGraw-Hill, 1997.

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23

Volḱenshteĭn, F. F. Electronic processes on semiconductor surfaces during chemisorption. NewYork: Consultants Bureau, 1991.

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24

Electronic processes on semiconductor surfaces during chemisorption. New York: Consultants Bureau, 1991.

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25

Semiconductor nanostructures: Quantum states and electronic transport. Oxford: Oxford University Press, 2010.

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26

Semiconductor devices: Basic principles. New York: Wiley, 2001.

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27

Singh, Jasprit. Semiconductor devices: An introduction. New York: McGraw-Hill, 1994.

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28

Semiconductor devices: An introduction. New York: McGraw-Hill, 1994.

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29

Ramunas, Katilius y Matulionis A. 1946-, eds. Microwave noise in semiconductor devices. New York: J. Wiley, 2001.

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30

Hester, Edward y Robyn Margulies. World electronic components. Cleveland: Freedonia Group, 2000.

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31

Dubey, G. K. Power semiconductor controlled drives. London: Prentice-Hall, 1989.

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32

Dubey, G. K. Power semiconductor controlled drives. Englewood Cliffs, N.J: Prentice Hall, 1989.

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33

Sanders, G. Semiconductor Electronic Devices. Springer, 1998.

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34

Boer, Karl W. Survey of Semiconductor Physics: Electronic Transport in Semiconductors. John Wiley & Sons, 2002.

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35

Basu, Prasanta Kumar, Bratati Mukhopadhyay y Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

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Resumen
Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.
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36

Wolf, E. L. Atoms, Molecules, Crystals and Semiconductor Devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0005.

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Properties of matter and of electronic devices are described, starting with Bohr’s model of the hydrogen atom. Motion of electrons in a periodic potential is shown to allow energy ranges with free motion separated by energy ranges where no propagating states are possible. Metals and semiconductors are described via Schrodinger’s equation in terms of their structure and their electrical properties. Energy gaps and effective masses are described. The semiconductor pn junction is described as a circuit element and as a photovoltaic device. We now extend Schrodinger’s method to more familiar matter, in the form of atoms, molecules and semiconductors. The solar cell, that produces electrical energy from Sunlight, in fact requires a sophisticated understanding of the semiconductor PN junction.
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37

A, Jackson Kenneth y Wolfgang Schröter. Handbook of Semiconductor Technology, Volume 2: Processing of Semiconductors. Wiley & Sons, Limited, John, 2008.

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38

A, Jackson Kenneth y Wolfgang Schröter. Handbook of Semiconductor Technology, Volume 2: Processing of Semiconductors. Wiley & Sons, Incorporated, John, 2020.

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39

Mönch, Winfried. Electronic Properties of Semiconductor Interfaces. Springer Berlin / Heidelberg, 2010.

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40

Watanabe, Seiichi. Semiconductor Devices for Electronic Tuners. Taylor & Francis Group, 2020.

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41

Electronic Materials and Semiconductor Devices. Alpha Science International, Limited, 2013.

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42

Watanabe, Seiichi. Semiconductor Devices for Electronic Tuners. Taylor & Francis Group, 2020.

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43

Watanabe, Seiichi. Semiconductor Devices for Electronic Tuners. Taylor & Francis Group, 2021.

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44

Margaritondo, Giorgio. Electronic Structure of Semiconductor Heterojunctions. Springer, 2012.

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45

Electronic Structure of Semiconductor Heterojunctions. Springer, 2011.

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46

Electronic Properties of Semiconductor Interfaces. Springer, 2004.

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47

Mönch, Winfried. Electronic Properties of Semiconductor Interfaces. 2004.

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48

Watanabe, Seiichi. Semiconductor Devices for Electronic Tuners. Taylor & Francis Group, 2020.

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49

Watanabe, Seiichi. Semiconductor Devices for Electronic Tuners. Taylor & Francis Group, 2020.

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50

Mönch, Winfried. Electronic Structure of Metal-Semiconductor Contacts. Springer, 2011.

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