Literatura académica sobre el tema "Electronic devices"

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Artículos de revistas sobre el tema "Electronic devices"

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Bokka, Naveen, Venkatarao Selamneni, Vivek Adepu, Sandeep Jajjara y Parikshit Sahatiya. "Water soluble flexible and wearable electronic devices: a review". Flexible and Printed Electronics 6, n.º 4 (1 de diciembre de 2021): 043006. http://dx.doi.org/10.1088/2058-8585/ac3c35.

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Abstract Electronic devices that are biodegradable, water soluble and flexible and are fabricated using biodegradable materials are of great importance due to their potential application in biomedical implants, personal healthcare etc. Moreover, despite the swift growth of semiconductor technologies and considering a device’s shell life of two years, the subject of electronic waste (E-waste) disposal has become a major issue. Transient electronics is a rapidly expanding field that solves the issue of E-waste by destroying the device after usage. The device disintegration can be caused by a multitude of triggering events, an example is that the device totally dissolves and/or disintegrates when submerged in water. This technology enables us to utilize electronic devices for a set amount of time before quickly destroying them, lowering E-waste significantly. This review will highlight the recent advancement in water-soluble flexible electronic devices with more focus on functional materials (water insoluble), fabrication strategies and transiency understanding with special importance on areas where these devices exhibit potential application in flexible and wearable electronic devices which includes field effect transistors, photodetectors, memristors and sensors for personal healthcare monitoring.
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Lewis, James R., Patrick M. Commarford, Peter J. Kennedy y Wallace J. Sadowski. "Handheld Electronic Devices". Reviews of Human Factors and Ergonomics 4, n.º 1 (octubre de 2008): 105–48. http://dx.doi.org/10.1518/155723408x342880.

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From PDAs to cell phones to MP3 players, handheld electronic devices are ubiquitous. Human factors engineers and designers have a need to remain informed about advances in research on user interface design for this class of devices. This review provides human factors research summaries and research-based guidelines for the design of handheld devices. The major topics include anthropometry (fitting the device to the hand), input (types of device control and methods for data entry), output (display design), interaction design (one-handed use, scrolling, menu design, image manipulation, and using the mobile Web), and data sharing (among users, devices, and networks). Thus, this review covers the key aspects of the design of handheld devices, from the design of the physical form of the device through its hardware and software, including its behavior in networks.
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Deswal, Chirag, Nikit T. Nagrare, Gaurav Singh, Himanshu Sharma y Bindu Garg. "Controlling Electronic Appliances Using Remote Devices". Paripex - Indian Journal Of Research 3, n.º 5 (15 de enero de 2012): 40–43. http://dx.doi.org/10.15373/22501991/may2014/14.

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Xing, Junjie, Shixian Qin, Binglin Lai, Bowen Li, Zhida Li y Guocheng Zhang. "Top-Gate Transparent Organic Synaptic Transistors Based on Co-Mingled Heterojunctions". Electronics 12, n.º 7 (29 de marzo de 2023): 1596. http://dx.doi.org/10.3390/electronics12071596.

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The rapid development of electronics and materials science has driven the progress of various electronic devices, and the new generation of electronic devices, represented by wearable smart products, has introduced transparent new demands on the devices. The ability of biological synapses to enhance or inhibit information when it is transmitted is thought to be the biological mechanism of artificial synaptic devices. The advantage of the human brain over conventional computers is the ability to perform efficient parallel operations when dealing with unstructured and complex problems. Inspired by biologically powerful neural networks, it is important to simulate biological synaptic functions on a single electronic device, and organic artificial synaptic transistors are artificially intelligent and very suitable artificial synaptic devices. Therefore, this paper proposes an organic artificial synaptic transistor with transparency (≥75%), provides a new solution for transparent top-gate synapses, and shows their promise for the next generation of organic electronics.
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Jawade, Shubham. "Thermal Analysis of Microchannels Heat Sink using Super-hydrophobic Surface". International Journal for Research in Applied Science and Engineering Technology 9, n.º 9 (30 de septiembre de 2021): 654–57. http://dx.doi.org/10.22214/ijraset.2021.38024.

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Abstract: Electronics devices are the major part of modern technology and with the rapid growth of miniaturizations of electronic devices, the heat dissipation from these devices have been the objective for researchers. This heat dissipation has to done effectively otherwise this will affect the life of device and will result decrement in efficiency. Increasing the heat transfer rates from electronic devices has long been a quest. Microchannel heat sink is one of the best option for removing heat from the electronics devices due to its compact size which provides high surface area to volume ratio that enables higher heat transfer rates. Microchannels are the flow passages having hydraulic diameter ranges from 10 micrometer (µm) to 200µm. Microchannel heat sink enhances the feasibility of electronics device. Microchannels with hydrophobic surface are a promising candidate for cooling of electronics devices, as hydrophobic surface can be used to create friction free regions with a channel which effectively reduce pumping power, flow pressure drop and frictional factor compared to Microchannel without Hydrophobic surface. This paper deals with the detailed behavior of Microchannel with hydrophobic surface. In this work, rectangular cross section with 0.8 mm (800 micron) hydraulic diameter super hydrophobic microchannel is used. Keywords: Microchannel, Hydrophobic surface, Heat transfer rate, Frictional factor.
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Kaur, Inderpreet, Shriniwas Yadav, Sukhbir Singh, Vanish Kumar, Shweta Arora y Deepika Bhatnagar. "Nano Electronics: A New Era of Devices". Solid State Phenomena 222 (noviembre de 2014): 99–116. http://dx.doi.org/10.4028/www.scientific.net/ssp.222.99.

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The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.
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Dasgupta, Abhijit, Donald Barker y Michael Pecht. "Reliability Prediction of Electronic Packages". Journal of the IEST 33, n.º 3 (1 de mayo de 1990): 36–45. http://dx.doi.org/10.17764/jiet.2.33.3.722130658127865r.

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The electronics industry traditionally addresses the issue of life-cycle prediction of electronic devices as a constant failure rate problem by assuming that a burn-in period has been completed and that wear-out will not occur within the designed service life of the device. Although some electrical characteristics of electronic devices may exhibit early and random failures, the majority of failures in electronic packages are due to mechanical failure mechanisms such as fracture, fatigue, and corrosion. These failures are primarily wear-out phenomena rather than statistically random phenomena and hence cannot be characterized as a constant failure-rate process during any significant segment of the life of the device. This article provides an overview of the state-of-the-art in generating analytical models for fatigue life estimation due to mechanical wear-out, and to critically examine the applicability of these models in the reliability prediction of electronic packages.
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Rav Acha, Moshe, Elina Soifer y Tal Hasin. "Cardiac Implantable Electronic Miniaturized and Micro Devices". Micromachines 11, n.º 10 (29 de septiembre de 2020): 902. http://dx.doi.org/10.3390/mi11100902.

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Advancement in the miniaturization of high-density power sources, electronic circuits, and communication technologies enabled the construction of miniaturized electronic devices, implanted directly in the heart. These include pacing devices to prevent low heart rates or terminate heart rhythm abnormalities (‘arrhythmias’), long-term rhythm monitoring devices for arrhythmia detection in unexplained syncope cases, and heart failure (HF) hemodynamic monitoring devices, enabling the real-time monitoring of cardiac pressures to detect and alert for early fluid overload. These devices were shown to prevent HF hospitalizations and improve HF patients’ life quality. Pacing devices include permanent pacemakers (PPM) that maintain normal heart rates, defibrillators that are capable of fast detection and the termination of life-threatening arrhythmias, and cardiac re-synchronization devices that improve cardiac function and the survival of HF patients. Traditionally, these devices are implanted via the venous system (‘endovascular’) using conductors (‘endovascular leads/electrodes’) that connect the subcutaneous device battery to the appropriate cardiac chamber. These leads are a potential source of multiple problems, including lead-failure and systemic infection resulting from the lifelong exposure of these leads to bacteria within the venous system. One of the important cardiac innovations in the last decade was the development of a leadless PPM functioning without venous leads, thus circumventing most endovascular PPM-related problems. Leadless PPM’s consist of a single device, including a miniaturized power source, electronic chips, and fixating mechanism, directly implanted into the cardiac muscle. Only rare device-related problems and almost no systemic infections occur with these devices. Current leadless PPM’s sense and pace only the ventricle. However, a novel leadless device that is capable of sensing both atrium and ventricle was recently FDA approved and miniaturized devices that are designed to synchronize right and left ventricles, using novel intra-body inner-device communication technologies, are under final experiments. This review will cover these novel implantable miniaturized cardiac devices and the basic algorithms and technologies that underlie their development. Advancement in the miniaturization of high-density power sources, electronic circuits, and communication technologies enabled the construction of miniaturized electronic devices, implanted directly in the heart. These include pacing devices to prevent low heart rates or terminate heart rhythm abnormalities (‘arrhythmias’), long-term rhythm monitoring devices for arrhythmia detection in unexplained syncope cases, and heart failure (HF) hemodynamic monitoring devices, enabling the real-time monitoring of cardiac pressures to detect and alert early fluid overload. These devices were shown to prevent HF hospitalizations and improve HF patients’ life quality. Pacing devices include permanent pacemakers (PPM) that maintain normal heart rates, defibrillators that are capable of fast detection and termination of life-threatening arrhythmias, and cardiac re-synchronization devices that improve cardiac function and survival of HF patients. Traditionally, these devices are implanted via the venous system (‘endovascular’) using conductors (‘endovascular leads/electrodes’) that connect the subcutaneous device battery to the appropriate cardiac chamber. These leads are a potential source of multiple problems, including lead-failure and systemic infection that result from the lifelong exposure of these leads to bacteria within the venous system. The development of a leadless PPM functioning without venous leads was one of the important cardiac innovations in the last decade, thus circumventing most endovascular PPM-related problems. Leadless PPM’s consist of a single device, including a miniaturized power source, electronic chips, and fixating mechanism, implanted directly into the cardiac muscle. Only rare device-related problems and almost no systemic infections occur with these devices. Current leadless PPM’s sense and pace only the ventricle. However, a novel leadless device that is capable of sensing both atrium and ventricle was recently FDA approved and miniaturized devices designed to synchronize right and left ventricles, using novel intra-body inner-device communication technologies, are under final experiments. This review will cover these novel implantable miniaturized cardiac devices and the basic algorithms and technologies that underlie their development.
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Prime, Dominic y Shashi Paul. "Gold Nanoparticle Based Electrically Rewritable Polymer Memory Devices". Advances in Science and Technology 54 (septiembre de 2008): 480–85. http://dx.doi.org/10.4028/www.scientific.net/ast.54.480.

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Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This interest can be attributed to the low cost, easy processing steps and simple device structures of organic electronics when compared to conventional silicon and inorganic electronics. In the field of organic electronic memories, non-volatile, rewritable polymer memory devices (PMDs) have shown promise as a future technology where cost and compatibility with flexible substrates are important factors. In this paper PMDs based on active layers containing an admixture of polystyrene, gold nanoparticles and 8-hydroxyquinoline will be presented, showing the devices’ electrical characteristics and memory performance attributes, and where possible discussing possible mechanisms of operation.
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PARK, YOON-SOO. "RECENT ADVANCES AND FUTURE TRENDS IN MODERN ELECTRONICS". International Journal of High Speed Electronics and Systems 10, n.º 01 (marzo de 2000): 1–4. http://dx.doi.org/10.1142/s0129156400000039.

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We discuss recent advances in various fields of modern electronic and optoelectronic devices. The major trends in electronics point to the nanoscale, to giga to terahertz operation, and to very low power consumption. These trends will require the development of advanced physics concepts and new device processing and characterization techniques. Various novel material systems will be researched. These approaches will greatly improve the performance of the electronic devices, and novel devices will further improve the level of human life as they have done before.
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Tesis sobre el tema "Electronic devices"

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Sergueev, Nikolai. "Electron-phonon interactions in molecular electronic devices". Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=102171.

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Over the past several decades, semiconductor electronic devices have been miniaturized following the remarkable "Moores law". If this trend is to continue, devices will reach physical size limit in the not too distance future. There is therefore an urgent need to understand the physics of electronic devices at nano-meter scale, and to predict how such nanoelectronics will work. In nanoelectronics theory, one of the most important and difficult problems concerns electron-phonon interactions under nonequilibrium transport conditions. Calculating phonon spectrum, electron-phonon interaction, and their effects to charge transport for nanoelectronic devices including all atomic microscopic details, is a very difficult and unsolved problem. It is the purpose of this thesis to develop a theoretical formalism and associated numerical tools for solving this problem.
In our formalism, we calculate electronic Hamiltonian via density functional theory (DFT) within the nonequilibrium Green's functions (NEGF) which takes care of nonequilibrium transport conditions and open device boundaries for the devices. From the total energy of the device scattering region, we derive the dynamic matrix in analytical form within DFT-NEGF and it gives the vibrational spectrum of the relevant atoms. The vibrational spectrum together with the vibrational eigenvector gives the electron-phonon coupling strength at nonequilibrium for various scattering states. A self-consistent Born approximation (SCBA) allows one to determine the phonon self-energy, the electron Green's function, the electronic density matrix and the electronic Hamiltonian, all self-consistently within equal footing. The main technical development of this work is the DFT-NEGF-SCBA formalism and its associated codes.
A number of important physics issues are studied in this work. We start with a detailed analysis of transport properties of C60 molecular tunnel junction. We find that charge transport is mediated by resonances due to an alignment of the Fermi level of the electrodes and the lowest unoccupied C60 molecular orbital. We then make a first step toward the problem of analyzing phonon modes of the C60 by examining the rotational and the center-of-mass motions by calculating the total energy. We obtain the characteristic frequencies of the libration and the center-of-mass modes, the latter is quantitatively consistent with recent experimental measurements. Next, we developed a DFT-NEGF theory for the general purpose of calculating any vibrational modes in molecular tunnel junctions. We derive an analytical expression for dynamic matrix within the framework of DFT-NEGF. Diagonalizing the dynamic matrix we obtain the vibrational (phonon) spectrum of the device. Using this technique we calculate the vibrational spectrum of benzenedithiolate molecule in a tunnel junction and we investigate electron-phonon coupling under an applied bias voltage during current flow. We find that the electron-phonon coupling strength for this molecular device changes drastically as the bias voltage increases, due to dominant contributions from the center-of-mass vibrational modes of the molecule. Finally, we have investigated the reverse problem, namely the effect of molecular vibrations on the tunneling current. For this purpose we developed the DFT-NEGF-SCBA formalism, and an example is given illustrating the power of this formalism.
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Kula, Mathias. "Understanding Electron Transport Properties of Molecular Electronic Devices". Doctoral thesis, KTH, Teoretisk kemi, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4500.

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his thesis has been devoted to the study of underlying mechanisms for electron transport in molecular electronic devices. Not only has focus been on describing the elastic and inelastic electron transport processes with a Green's function based scattering theory approach, but also on how to construct computational models that are relevant to experimental systems. The thesis is essentially divided into two parts. While the rst part covers basic assumptions and the elastic transport properties, the second part covers the inelastic transport properties and its applications. It is discussed how di erent experimental approaches may give rise to di erent junction widths and thereby di erences in coupling strength between the bridging molecules and the contacts. This di erence in coupling strength is then directly related to the magnitude of the current that passes through the molecule and may thus explain observed di erences between di erent experiments. Another focus is the role of intermolecular interactions on the current-voltage (I-V) characteristics, where water molecules interacting with functional groups in a set of conjugated molecules are considered. This is interesting from several aspects; many experiments are performed under ambient conditions, which means that water molecules will be present and may interfere with the experiment. Another point is that many measurement are done on self-assembled monolayers, which raises the question of how such a measurement relates to that of a single molecule. By looking at the perturbations caused by the water molecules, one may get an understanding of what impact a neighboring molecule may have. The theoretical predictions show that intermolecular e ects may play a crucial role and is related to the functional groups, which has to be taken into consideration when looking at experimental data. In the second part, the inelastic contribution to the total current is shown to be quite small and its real importance lies in probing the device geometry. Several molecules are studied for which experimental data is available for comparison. It is demonstrated that the IETS is very sensitive to the molecular conformation, contact geometry and junction width. It is also found that some of the spectral features that appear in experiment cannot be attributed to the molecular device, but to the background contributions, which shows how theory may be used to complement experiment. This part concludes with a study of the temperature dependence of the inelastic transport. This is very important not only from a theoretical point of view, but also for the experiments since it gives experimentalists a sense of which temperature ranges they can operate for measuring IETS.
QC 20100804. Ändrat titeln från: "Understanding Electron Transport Properties in Molecular Devices" 20100804.
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Kula, Mathias. "Understanding electron transport properties in molecular electronic devices /". Stockholm : Bioteknologi, Kungliga Tekniska högskolan, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4500.

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Rajagopal, Senthil Arun. "SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES". Miami University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.

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Barlow, Iain J. "Nanostructured Molecular Electronic Devices". Thesis, University of Sheffield, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.486548.

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Candidate organic semiconductor materials based on a,ro-dihexylquaterthiophene (dH4T) and a,ro-dihexylbis(phenylene)bithiophene (dHPTTP) core systems were synthesised. The tenninal positions of the alkyl substituents were substituted with, thioacetate, phosphonic acid, glycolic ester and allyl ether groups to enable the fonnation of self-assembled monolayers (SAMs) of the adsorbates onto Au, Ah03 and H-Si surfaces. These were then probed with x-ray photoelectron spectroscopy (XPS) and friction force microscopy (FFM). Analysis of the XPS spectra confirmed that the oligomers fonned monolayer films onto the respective substrates although the allyl-terminated oligomers were subject to oxidation when attached onto H-Si by thermally-initiated radical attachment. Comparison of this method with photochemical initiation highlighted a potentially competing photolysis reaction. FFM showed that the frictional properties of both the thiolate and phosphonic acid SAMs on Au and Ah03 for the oligomers depended on both the tail group polarity and the density of packing for the adsorbates, whilst the allyl-capped materials formed disordered monolayers on H-Si. Chemical patterns of the thioacetate and phosphonic acid-terminated oligomers were produced by the irradiation of methyl-tenninated alkanethiols and alkylphosphonic acids with 244 nm UV light. The irradiation and subsequent displacement of the exposed adsorbates with the dH4T and dHPTTP-based thioactetates and phosphonic acids resulted in areas of relatively high and low friction, which was imaged by FFM. The SAM photomodification process on Ah03 was monitored by XPS, and suggested C-P bond photolysis as a potential mechanism. Scanning near-field photolithography (SNP) was then used to generate dH4T and dHPTTP features into alkanethiol and phosphonate SAMs. The smallest features, of 40 nm fwhm demonstrate that SNP is a viable method for the preparation of organic semiconductors with nanometre resolution, with potential application in the production of self-assembled monolayer field-effect transistors (SAMFETs).
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Driskill-Smith, Alexander Adrian Girling. "Nanoscale vacuum electronic devices". Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621660.

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Malti, Abdellah. "Upscaling Organic Electronic Devices". Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122022.

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Conventional electronics based on silicon, germanium, or compounds of gallium require prohibitively expensive investments. A state-of-the-art microprocessor fabrication facility can cost up to $15 billion while using environmentally hazardous processes. In that context, the discovery of solution-processable conducting (and semiconducting) polymers stirred up expectations of ubiquitous electronics because it enables the mass-production of devices using well established high-volume printing techniques. In essence, this thesis attempts to study the characteristics and applications of thin conducting polymer films (<200 nm), and scale them up to thick-films (>100 μm). First, thin-films of organic materials were combined with an electric double layer capacitor to decrease the operating voltage of organic field effect transistors. In addition, ionic current-rectifying diodes membranes were integrated inside electrochromic displays to increase the device’s bistability and obviate the need for an expensive addressing backplane. This work also shows that it is possible to forgo the substrate and produce a self-standing electrochromic device by compositing the same water-processable material with nanofibrillated cellulose (plus a whitening pigment and high-boiling point solvents). In addition, we investigated the viability of these (semi)conducting polymer nanopaper composites in a variety of applications. This material exhibited an excellent combined electronic-ionic conductivity. Moreover, the conductivities in this easy-to-process composite remained constant within a wide range of thicknesses. Initially, this (semi)conducting nanopaper composite was used to produce electrochemical transistors with a giant transconductance (>1 S). Subsequently, it was used as electrodes to construct a supercapacitorwhose capacitance exceeds 1 F.
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Cao, Hui. "Dynamic Effects on Electron Transport in Molecular Electronic Devices". Doctoral thesis, KTH, Teoretisk kemi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-12676.

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HTML clipboardIn this thesis, dynamic effects on electron transport in molecular electronic devices are presented. Special attention is paid to the dynamics of atomic motions of bridged molecules, thermal motions of surrounding solvents, and many-body electron correlations in molecular junctions. In the framework of single-body Green’s function, the effect of nuclear motions on electron transport in molecular junctions is introduced on the basis of Born-Oppenheimer approximation. Contributions to electron transport from electron-vibration coupling are investigated from the second derivative of current-voltage characteristics, in which each peak is corresponding to a normal mode of the vibration. The inelastic-tunneling spectrum is thus a useful tool in probing the molecular conformations in molecular junctions. By taking account of the many-body interaction between electrons in the scattering region, both time-independent and time-dependent many-body Green’s function formula based on timedependent density functional theory have been developed, in which the concept of state of the system is used to provide insight into the correlation effect on electron transport in molecular devices. An effective approach that combines molecular dynamics simulations and first principles calculations has also been developed to study the statistical behavior of electron transport in electro-chemically gated molecular junctions. The effect of thermal motions of polar water molecules on electron transport at different temperatures has been found to be closely related to the temperature-dependent dynamical hydrogen bond network.
QC20100630
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Taher, Elmasly Saadeldin Elamin. "Electronic evaluation of organic semiconductors towards electronic devices". Thesis, University of Strathclyde, 2013. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=22541.

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Organic p-conjugated macromolecules, (polymers and oligomers) are an important class of semiconductor which are used in applications such as: field effect transistors, photovoltaics, organic light emitting diodes and electrochromic devices. The p-conjugated systems have tuneable band gaps (Eg) and redox properties, whilst offering the potential for flexibility and low cost. In this thesis, the macromolecular compounds and their low molecular weight precursors were characterised by determining their electrochemical and optical properties which were measured using a series of techniques such as: cyclic voltammetry; UV/vis spectroscopy; emission spectroscopy; spectroelectrochemistry; Raman spectroscopy and thermal analyses. Chapter 2 Presents thiophene copolymers with electroactive nitrogen heterocycles. In section 1, a series of monomers containing heteropentalene mesomeric betaine derivatives were characterized. In particular the 3,4-ethylenedioxythiophene (EDOT) derivative (9) was successfully electropolymerised, yielding a polymer with small optical and electrochemical Eg. In Section 2 the characterisation of EDTT, 3-hexylthiophene and EDOT units (17, 18 and 19 respectively) along with their benzothiadiazole (BT) copolymers are shown. Interesting changes in planarity were observed between the PEDOT and PEDTT compounds. Section 3 and 4 produced many EDOT/thiophene derivatives from phenanthroline and [Ru(bpy)2]) as the core unit. (20-26) All polymers exhibited lower electrochemical Eg when compared to their monomers. Compound 26 was polymerised with high oxidative stability to anodic conditions, however, monomer 25 did not polymerise, due to the domination of the strong RuII/RuIII oxidation process. Section 5 shows bis-EDOT pyridine based monomers (27 and 28). Monomer 28 displayed significant effect of the intramolecular charge transfer (ICT) process and lower electrochemical Eg. Three are new compounds 29, 30 and 31 in the section 6, BODIPY cores with two EDOT, thiophene and EDTT units respectively. When all were compared, Compound 29 showed red shift in the absorption spectra, due to stronger electron donating effect of EDOT. Chapter 3: In section 1 the optical and electrochemical properties of three oligofluorene substituted DPP macromolecules (32, 33, 34) and the core precursors (35, 36, 37 and 38) were investigated. The absorption spectra of all compounds in CH2Cl2 revealed two peaks attributed to p-p* transition of quaterfluorene arms and the absorption of DPP core. Compound 33 exhibited a higher LUMO level compared to the other compounds, which was attributed to the effects of the hexyldecyl and phenyl groups. Section 2 describes six new C3-symmetric compounds containing BT units and truxene core (41-46). The UV-absorption spectra of compounds 41-45, reveal an ICT band which is hypsochromically shifted in the case of compound 41 and is not resolved for compound 46. Compounds 41-44 exhibited a good agreement between electrochemical and optical Eg, while a significant difference between those of compound 46 indicates the poor HOMO-LUMO overlap. Chapter 4 A novel processing methodology was used to fabricate multi-layer organic electronic devices by employing electropolymerisation to form a PEDOT/PEDTT bi-layer. The fabricated device did not exhibit any distinctive photo-response when it was assessed in a diode configuration. This was due to inefficient charge separation at the donor- acceptor interface.
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Forsberg, Erik. "Electronic and Photonic Quantum Devices". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3476.

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In this thesis various subjects at the crossroads of quantummechanics and device physics are treated, spanning from afundamental study on quantum measurements to fabricationtechniques of controlling gates for nanoelectroniccomponents.

Electron waveguide components, i.e. electronic componentswith a size such that the wave nature of the electron dominatesthe device characteristics, are treated both experimentally andtheoretically. On the experimental side, evidence of partialballistic transport at room-temperature has been found anddevices controlled by in-plane Pt/GaAs gates have beenfabricated exhibiting an order of magnitude improvedgate-efficiency as compared to an earlier gate-technology. Onthe theoretical side, a novel numerical method forself-consistent simulations of electron waveguide devices hasbeen developed. The method is unique as it incorporates anenergy resolved charge density calculation allowing for e.g.calculations of electron waveguide devices to which a finitebias is applied. The method has then been used in discussionson the influence of space-charge on gate-control of electronwaveguide Y-branch switches.

Electron waveguides were also used in a proposal for a novelscheme of carrierinjection in low-dimensional semiconductorlasers, a scheme which altogether by- passes the problem ofslow carrier relaxation in suchstructures. By studying aquantum mechanical two-level system serving as a model forelectroabsorption modulators, the ultimate limits of possiblemodulation rates of such modulators have been assessed andfound to largely be determined by the adiabatic response of thesystem. The possibility of using a microwave field to controlRabi oscillations in two-level systems such that a large numberof states can be engineered has also been explored.

A more fundamental study on quantum mechanical measurementshas been done, in which the transition from a classical to aquantum "interaction free" measurement was studied, making aconnection with quantum non-demolition measurements.

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Libros sobre el tema "Electronic devices"

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Floyd, Thomas L. Electronic devices. 2a ed. Columbus: Merrill Pub. Co., 1988.

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Electronic devices. 5a ed. Upper Saddle River, N.J: Prentice Hall, 1999.

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Electronic devices. 4a ed. Englewood Cliffs, N.J: Prentice Hall, 1996.

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Electronic devices. 7a ed. Upper Saddle River, NJ: Pearson Prentice Hall, 2005.

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Floyd, Thomas L. Electronic devices. 5a ed. London: Prentice-Hall International, 1999.

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Engdahl, Sylvia. Electronic devices. Detroit: Greenhaven Press, 2012.

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Electronic devices. 7a ed. New Jersey: Pearson/Prentice Hall, 2004.

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Abraham, Pallas y Carr Joseph J, eds. Electronic devices. New York, N.Y: Glencoe, Macmillan/McGraw-Hill, 1993.

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Electronic devices. 6a ed. Upper Saddle River, N.J: Prentice Hall, 2002.

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Kristof, Sienicki, ed. Molecular electronics and molecular electronic devices. Boca Raton, FL: CRC Press, 1993.

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Capítulos de libros sobre el tema "Electronic devices"

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Sobot, Robert. "Electronic Devices". En Wireless Communication Electronics, 67–125. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-1117-8_4.

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Miyamoto, Hironobu, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe, Akio Hiraki, Hirohisa Hiraki, Hideomi Koinuma y Masao Katayama. "Electronic Devices". En Wide Bandgap Semiconductors, 231–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_4.

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Forster, E. "Electronic devices". En Equipment for Diagnostic Radiography, 35–43. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-4930-0_3.

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Anand, M. L. "Electronic Devices". En Modern Electronics and Communication Engineering, 33–94. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003222972-5.

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Spellman, Frank R. "Electronic Devices". En The Science of Lithium, 27–28. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003387879-7.

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Wallis, R. H. "Key Electrical Devices". En Electronic Materials, 47–65. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_6.

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Nelson, A. W. "Key Optoelectronic Devices". En Electronic Materials, 67–89. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_7.

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Chen, J., M. A. Reed, S. M. Dirk, D. W. Price, A. M. Rawlett, J. M. Tour, D. S. Grubisha y D. W. Bennett. "Molecular Electronic Devices". En Molecular Electronics: Bio-sensors and Bio-computers, 59–195. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0141-0_5.

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Sobot, Robert. "Electronic Devices: Solutions". En Wireless Communication Electronics by Example, 143–59. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02871-2_16.

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Sobot, Robert. "Electronic Devices: Problems". En Wireless Communication Electronics by Example, 19–23. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02871-2_4.

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Actas de conferencias sobre el tema "Electronic devices"

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"Electronic devices". En 8th International Multitopic Conference, 2004. Proceedings of INMIC 2004. IEEE, 2004. http://dx.doi.org/10.1109/inmic.2004.1492967.

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Zhou, Jianhua y Li Shi. "Scanning Probe Microscopy of Carbon Nanotube Electronic Devices". En ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-62318.

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Electron transport and dissipation mechanisms in single-walled carbon nanotube electronic devices are intriguing. In the past, electrostatic force microscopy and scanning thermal microscopy methods have been employed to obtain respectively the voltage and temperature profiles in carbon nanotube electronic devices. The measurement results have suggested weak electron-acoustic phonon scattering at low bias and intense optical phonon emission at high bias. However, because the thermal probe was in direct contact with the nanotubes during thermal imaging, the probe could disturb charge transport. Further, it was difficult to quantify the thermal contact between the probe and the nanotube, making it difficult to quantify the actual temperature rise in the device. We have recently overcome these problems by coating the nanotube device with a 5–10 nm thick polystyrene film. The ultra-thin uniform coating can effectively protect the nanotube device during thermal imaging without reducing the signal level. It can potentially allow us to quantify the temperature rise of the nanotube devices by calibrating the thermal probe using a nanometer scale resistance thermometer covered by the same coating. Our recent results reveal diffusive and dissipative charge transport in a possibly double wall carbon nanotube with a semiconducting outer wall. We have also observed uniform heat dissipation in a metallic single-walled carbon nanotube at an applied bias above 0.2 V. Measurements on metallic and semiconducting single wall carbon nanotubes of different lengths are currently underway in order to improve our understanding of the transport and dissipation mechanisms in carbon nanotube electronics at low biases.
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"Opto electronic devices". En 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354976.

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Isberg, J., Gabriel Ferro y Paul Siffert. "Diamond Electronic Devices". En 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518277.

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Ritzkowsky, Felix, Mina R. Bionta, Marco Turchetti, Karl K. Berggren, Franz X. Kärtner y Philip D. Keathley. "Engineering the Frequency Response of Petahertz-Electronic Nanoantenna Field-Sampling Devices". En CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jw3a.56.

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Unlike atomic and bulk solid-state systems, nanoantenna-based petahertz-electronic devices offer unprecedented control over electron emission response. We show how device symmetry, nonlinearity, and driving waveform control the frequency response of petahertz-electronic optical field samplers.
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Daniel, Susan. "Biomembrane organic electronic devices". En Organic and Hybrid Sensors and Bioelectronics XIII, editado por Ruth Shinar, Ioannis Kymissis y Emil J. List-Kratochvil. SPIE, 2020. http://dx.doi.org/10.1117/12.2569287.

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Biolek, Zdenek, Viera Biolkova, Jan Voralek y Dalibor Biolek. "Digitally Emulated Electronic Devices". En 2017 Asia Modelling Symposium (AMS). 11th International Conference on Mathematical Modelling & Computer Simulation. IEEE, 2017. http://dx.doi.org/10.1109/ams.2017.36.

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"Materials for electronic devices". En Conference on Electron Devices, 2005 Spanish. IEEE, 2005. http://dx.doi.org/10.1109/sced.2005.1504420.

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"2D Electronic Devices I". En 2018 76th Device Research Conference (DRC). IEEE, 2018. http://dx.doi.org/10.1109/drc.2018.8442182.

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"2D Electronic Devices II". En 2018 76th Device Research Conference (DRC). IEEE, 2018. http://dx.doi.org/10.1109/drc.2018.8442259.

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Informes sobre el tema "Electronic devices"

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Schubert, William Kent, Paul Martin Baca, Shawn M. Dirk, G. Ronald Anderson y David Roger Wheeler. Polymer electronic devices and materials. Office of Scientific and Technical Information (OSTI), enero de 2006. http://dx.doi.org/10.2172/896554.

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Sohn, Lydia L., David Beebe y Daniel Notterman. Electronic Sensing for Microfluidic Devices. Fort Belvoir, VA: Defense Technical Information Center, octubre de 2005. http://dx.doi.org/10.21236/ada455539.

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Perrey, Arnold G., Barry A. Bell y Marshall J. Treado. Evaluation of electronic monitoring devices. Gaithersburg, MD: National Bureau of Standards, 1986. http://dx.doi.org/10.6028/nbs.ir.86-3501.

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Grubin, H. L. y J. P. Kreskovsky. Studying Quantum Phase-Based Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 1988. http://dx.doi.org/10.21236/ada200376.

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Nordman, James E. Superconductive Electronic Devices Using Flux Quanta. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1996. http://dx.doi.org/10.21236/ada310962.

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Grubin, H. L., M. Cahay y J. P. Kreskovsky. Studying Quantum Phase-Based Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1990. http://dx.doi.org/10.21236/ada226809.

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Fendler, J. Bilayer lipid membrane-supported electronic devices. Office of Scientific and Technical Information (OSTI), enero de 1989. http://dx.doi.org/10.2172/5367733.

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Zhou, Ming. Novel carbon materials for electronic devices fabrication. Office of Scientific and Technical Information (OSTI), agosto de 2015. http://dx.doi.org/10.2172/1213508.

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O'Brien, Gavin. Securing Electronic Health Records on Mobile Devices. Gaithersburg, MD: National Institute of Standards and Technology, septiembre de 2017. http://dx.doi.org/10.6028/nist.sp.1800-1.

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Ashton, E. C. y G. C. Bergeson. Electronic systems miniaturization using programmable logic devices. Office of Scientific and Technical Information (OSTI), octubre de 1990. http://dx.doi.org/10.2172/6278105.

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