Tesis sobre el tema "Electro-optic devices"
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DeRose, Christopher Todd. "Electro-Optic Polymers: Materials and Devices". Diss., The University of Arizona, 2009. http://hdl.handle.net/10150/195650.
Texto completoTaboada, John Martin. "Polymer electro-optic and thermo-optic devices for optical interconnects /". Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3023563.
Texto completoChoy, Wallace Chik-Ho. "Modelling of acousto-optic and electro-optic quantum-wells modulation devices". Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843772/.
Texto completoWallace, Chik-Ho Choy. "Modelling and electro-optic quantum-wells modulation devices". Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267967.
Texto completoChen, Jianxiao. "Tunable electro-optic devices for fiber optical RF signal processing". Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3203495.
Texto completoTitle from first page of PDF file (viewed March 1, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
Mason, Karen B. "An electro-optic logic system employing liquid crystal display devices". Thesis, University of Manchester, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329084.
Texto completoJobanputra, Manish C. "Investigation of Organic Thin Films for Application in Electro-Optic Devices". University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1017755544.
Texto completoGan, Haiyong. "Electro-optic Polymer Based Fabry-Perot Interferometer Devices for Optoelectronic Applications". Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/195839.
Texto completoWu, Xiaohua. "Field simulation and calibration in external electro-optic sampling /". *McMaster only, 1996.
Buscar texto completoTulli, Domenico. "Micro-nano structured electro-optic devices in LiNbO3 for communication and sensing". Doctoral thesis, Universitat Politècnica de Catalunya, 2012. http://hdl.handle.net/10803/81118.
Texto completoUno de los materiales que permite el avance de la tecnología de dispositivos ópticos integrados es el niobato de litio (LiNbO3). Se trata de un cristal ferro-eléctrico, con excelentes propiedades electro-ópticas, acusto-ópticas y no lineales. Además, es posible fabricar guías de onda de bajas pérdidas mediante las técnicas de intercambio protónico (PE) y difusión de titanio. El objetivo principal de este trabajo es el desarrollo y la introducción tanto de las técnicas avanzadas de micro-nano fabricación para el niobato de litio como de nuevos dispositivos ópticos integrados para las comunicaciones ópticas y la detección de campo eléctricos de alto voltaje. La técnicas de fabricación desarrolladas incluyen inversión de dominios mediante la técnica de poling de alto voltaje, grabado, bonding y capas delgadas. Desde el punto de vista de los dispositivos, la inversión de dominios ha sido utilizada para mejorar la respuesta electro-óptica de los moduladores en LiNbO3 en términos de ancho de banda (BW) y voltaje de control (Vπ). En comparación con los moduladores comerciales actuales de un único dominio, con esta técnica es posible obtener mayores anchos de banda y menores voltajes de control resultando en un aumento del 50% del producto BW·Vπ. Para demonstrar la eficacia de la técnica desarrollada, se ha fabricado un modulador Mach-Zehnder chirp-free poniendo los brazos del interferómetro en dos regiones de dominios opuestos. De las mediciones efectuadas se han obtenidos valores de voltaje de control de 2V y ancho de banda de 15 GHz. Estos resultados muestran que los dispositivos desarrollados pueden reducir el coste total de funcionamiento, ya que permiten el uso de controladores económicos de Si-Ge que operan en el rango de los 2V. Otro aspecto de este trabajo se enfoca en el desarrollo de dispositivos para medir, de forma exacta, altos campos eléctricos, que normalmente son generados en las centrales eléctricas y en las líneas de transmisión. Por este motivo, se han desarrollado dos sensores de campo eléctrico mediante las técnicas de micro-fabricación anteriormente mencionadas. El primer dispositivo está basado en una guía fabricada mediante intercambio protónico en LiNbO3 z-cut, diseñada a la frecuencia de corte y centrada en una región de dominio invertido de 10 micras de ancho y 10mm de largo. El rendimiento del dispositivo se ha demostrado detectando campos a baja frecuencia con amplitudes de hasta 2.6MV/m y campos a la frecuencia de 1.1GHz con amplitudes desde 19V/m hasta 23kV/m. El segundo dispositivo se ha fabricado mediante bonding directo de un sustrato de LiNbO3 encima de una guía PE diseñada a la frecuencia de corte y centrada en una región de dominio invertido de 10 micras de ancho y 10mm de largo. El dispositivo se ha caracterizado a baja frecuencia y ha sido posible medir campos eléctricos de hasta 2MV/m con un aumento de sensibilidad comparado con el primer dispositivo fabricado sin la técnica del bonding. Estos resultados muestran que los dispositivos desarrollados pueden ser utilizados para mediciones de campos eléctricos intensos en condiciones peligrosas sin ningún riesgo para el operador. Después de una breve introducción en el Capítulo 1 de esta Tesis, las propiedades del LiNbO3 se discuten en el Capítulo 2, prestando especial atención a sus características ópticas y electro-ópticas. El Capítulo 3 presenta las técnicas de micro fabricación desarrolladas durante este trabajo sobre sustratos de 3 pulgadas. En particular, se presentan las técnicas de fabricación de guías mediante intercambio protónico, de inversión de dominios mediante poling de alto voltaje, de bonding de LiNbO3 con diferentes sustratos (LiNbO3 , SiO2, Si) y la fabricación de capas delgadas. El Capítulo 4 ofrece una introducción sobre los moduladores interferométricos Mach-Zehnder de onda propagada, presentando sus principales características. Además se presenta una nueva estructura de modulador basada sobre inversión de dominios y los resultados obtenidos. El Capítulo 5 empieza con una introducción sobre los sensores de campo eléctrico y después se presentan dos nuevos sensores de campo eléctrico completamente ópticos fabricados en LiNbO3 z-cut. Los dispositivos están basados en las técnicas de intercambio protónico, inversión de dominios y bonding directo. Finalmente, en el Capítulo 6 se presentan las conclusiones y posibles desarrollos futuros que pueden contribuir al aumento del impacto de este trabajo en las industrias de comunicaciones ópticas y de detección.
Musgrave, Bronje. "Electro-optic studies of the flexoelectric effect in chiral nematic liquid crystals". Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313146.
Texto completoLauermann, Matthias [Verfasser]. "Silicon-organic hybrid devices for high-speed electro-optic signal processing / Matthias Lauermann". Karlsruhe : KIT Scientific Publishing, 2018. http://www.ksp.kit.edu.
Texto completoLi, Chao. "Silicon-based optical microresonator devices : polygonal microdisk channel filters and electro-optic modulators/switches /". View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LI.
Texto completoSodagar, Majid. "Enabling integrated nanophotonic devices in hybrid cmos-compatible material platforms for optical interconnection". Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53952.
Texto completoLu, Xuejun. "High performance thermo-optic switch and electro-optic modulator based on polymeric multi-mode waveguides with high device packing density for optical network applications". Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3034934.
Texto completoZuo, Yiying 1974. "Design, analysis, and implementation of multi-port refraction based electro-optic switches". Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=103035.
Texto completoAlthough rectangular geometry is extensively employed in EO devices, nonrectangular scanners have demonstrated better deflection performance. Two new nonrectangular geometries capable of further enhancing the deflection performance of EO beam scanners, proposed in this dissertation, were constructed. Their parabola and half-horn geometries provide 2-3 degrees of steering, which is 2-3 times greater than the steering provided by rectangular deflectors.
EO deflectors based on the parabola and the half-horn geometries, which can provide larger deflection angles, were built. These devices demonstrated a deflection angle of 3.1°, less than 5 dB of insertion loss from fiber to fiber, and -40 dB of crosstalk.
Two packaged optical switches using rectangular EO deflectors were demonstrated. By combining these EO deflectors with fiber collimators and high voltage packaging, high speed optical switches were built and characterized. The switch design was based on a 500mum z-cut LiTaO3 single crystal wafer fabricated using the domain inversion method. The 1x2 switch had a maximum deflection angle of 1.22° with an applied voltage of 1.1 kV and the 1x4 switch had a maximum deviation angle of 2.14°, with an applied voltage of 1 kV. The average insertion loss and crosstalk figures were 2.36 dB and -36 dB, respectively. The worst case switching time was 86 ns.
Lentine, Anthony L. "Issues in the design of self electro-optic effect devices for optical signal processing". Thesis, Heriot-Watt University, 1993. http://hdl.handle.net/10399/1474.
Texto completoMohsin, Muhammad Verfasser], Joachim [Akademischer Betreuer] [Knoch y Wilfried [Akademischer Betreuer] Mokwa. "Graphene based Electro Optic and Digital Logic Devices / Muhammad Mohsin ; Joachim Knoch, Wilfried Mokwa". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1161809007/34.
Texto completoMohsin, Muhammad [Verfasser], Joachim [Akademischer Betreuer] Knoch y Wilfried [Akademischer Betreuer] Mokwa. "Graphene based Electro Optic and Digital Logic Devices / Muhammad Mohsin ; Joachim Knoch, Wilfried Mokwa". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1161809007/34.
Texto completoEvans, Jonathan W. "Beam Switching of an Nd:YAG Laser Using Domain Engineered Prisms in Magnesium Oxide Doped Congruent Lithium Niobate". University of Dayton / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1281366442.
Texto completoHAGEN, JOSHUA A. "INVESTIGATION OF MARINE DERIVED DNA FOR USE AS A CLADDING LAYER IN ELECTRO-OPTIC DEVICES". University of Cincinnati / OhioLINK, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1078432550.
Texto completoAn, Dechang. "Electro-optic polymer-based monolithic waveguide devices with multi-functions of amplification switching and modulation". Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3035933.
Texto completoBhattacharjee, Sanchali. "Novel concepts in the design and synthesis of organic nonlinear optical and electro-optic materials /". Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8605.
Texto completoRuege, Alexander Charles. "Electro-Optic Ring Resonators in Integrated Optics For Miniature Electric Field Sensors". The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1322521235.
Texto completoLauermann, Matthias [Verfasser] y C. [Akademischer Betreuer] Koos. "Silicon-organic hybrid devices for high-speed electro-optic signal processing / Matthias Lauermann ; Betreuer: C. Koos". Karlsruhe : KIT-Bibliothek, 2018. http://d-nb.info/1153828596/34.
Texto completoGutiérrez, Campo Ana María. "Development of integrated silicon photonics modulation devices for digital and analog applications". Doctoral thesis, Universitat Politècnica de València, 2013. http://hdl.handle.net/10251/33330.
Texto completoLa fotónica de silicio es una de las tecnologías fotónicas que está experimentando un crecimiento más excitante y rápido en los últimos años. La característica más destacada de esta tecnología es su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos ¿complementary metal-oxide semiconductor¿ (CMOS) ampliamente utilizados en la industria microelectrónica. Otra motivación es la disponibilidad de circuitos de guía de ondas planas de silicio sobre aislante (SOI) de alta calidad que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el SiO2 (n = 1,45). Esto abre las puertas a la miniaturización y a la integración a gran escala de dispositivos fotónicos lo que resulta en circuitos fotónicos integrados para una amplia gama de aplicaciones y mercados, desde telecomunicaciones ópticas a dispositivos bio-fotónicos o sensores de fibra precisos. Los moduladores ópticos son elementos básicos fundamentales para la transmisión de señales a alta velocidad y el procesado de información en cualquier solución de interconexión fotónica. El trabajo desarrollado en esta tesis, como parte del los objetivos del proyecto Europeo HELIOS en el que está enmarcada, se centra fundamentalmente en realizar moduladores compactos y eficientes, integrados en chips de silicio. La tesis consiste en 3 capítulos principales así como una sección de conclusiones del trabajo conseguido. El capítulo uno está destinado a dar una descripción general de los beneficios del uso de la fotónica de silicio, mostrando sus retos y oportunidades, así como a dar una visión profunda de todos los aspectos relacionados con la modulación electro-óptica. El capítulo dos está dedicado a desarrollar moduladores de silicio de altas prestaciones para aplicaciones digitales. Específicamente, se presentan nuevas estructuras ópticas diferentes a las convencionales con el objetivo de mejorar el rendimiento de la modulación o al menos algunos parámetros críticos en la modulación. El tercer capítulo se dedica a las aplicaciones analógicas. Se describe el concepto de la fotónica de microondas, así como diferentes investigaciones llevadas a cabo en el ámbito analógico para su aplicación en el campo de la fotónica integrada de microondas, todas ellas usando moduladores electro-ópticos de silicio compatibles con los procesos de fabricación CMOS, lo que valida el potencial de la fotónica de silicio como un prometedor enfoque para permitir el desarrollo de aplicaciones de la fotónica integrada de microondas. Por último, las conclusiones sobre el trabajo realizado se proporcionan en el Capítulo 4.
Gutiérrez Campo, AM. (2013). Development of integrated silicon photonics modulation devices for digital and analog applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/33330
TESIS
Zanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects". Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.
Texto completo[ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma.
[CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum.
I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place.
Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377
TESIS
Hernandez, Gerardo Rodriguez. "Study of mixed mode electro-optical operations of Ge2Sb2Te5". Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:5bb8c1f5-2f4b-4eb0-a61a-3978af04211f.
Texto completoBhatambrekar, Nishant. "Realizing a fractional volt half-wave voltage in Mach-Zehnder modulators using a DC biased push-pull method and synthesis and characterization of indole based NLO chromophores for improving electro-optic activity /". Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/11606.
Texto completoSmith, Kevin H. "In-fiber Optical Devices Based on D-fiber". BYU ScholarsArchive, 2005. https://scholarsarchive.byu.edu/etd/291.
Texto completoLe, Hung Manh y n/a. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics". Griffith University. School of Science, 1997. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20070403.094305.
Texto completoLe, Hung. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics". Thesis, Griffith University, 1997. http://hdl.handle.net/10072/366817.
Texto completoThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Science
Science, Environment, Engineering and Technology
Full Text
Desmulliez, Marc P. Y. "Self-electro-optic-effect-device response analysis for optical computing". Thesis, Heriot-Watt University, 1995. http://hdl.handle.net/10399/767.
Texto completoNoot, Christopher David John. "The electro-optic properties of liquid crystalline materials for optical device applications". Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.416918.
Texto completoMhaouech, Imed. "Étude du transport de charges dans le niobate de lithium massif et réalisation de fonctions électro-optiques dans le niobate de lithium périodiquement polarisé". Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0032/document.
Texto completoThe first part of this thesis is devoted to the modeling of transport phenomena in the LN. From a critical analysis of the usual band models, we show their inadequacy in the case of LN and we propose a hopping model based on the theory of small polarons. We first study by Monte-Carlo simulation the population decay of bound polarons NbLi4+ in deep traps FeLi3+. We show that the traps (FeLi3+) have particularly large effective radii, which increase further at decreasing temperature, and considerably limit the diffusion lengths of the polarons. The results of simulations are then compared with experimental results obtained by different techniques; Light-induced absorption, Raman, Holographic storage and Pump-Probe. The second part of this thesis is devoted to electro-optical applications in the periodically poled LN (PPLN). Under the effect of an electrical voltage, the refractive index of the PPLN is periodically decreased and increased, thus forming an electrically activatable index grating. A first component using the electro-optical effect in PPLN has been developed and demonstrated experimentally. In this component, the light is deflected under the effect of the electrical voltage by the index grating. This Bragg deflector achieves a diffraction efficiency of close to 100% with a low drive voltage of the order of 5 V. A second component has also been proposed, where light propagates perpendicularly to the domain walls of the PPLN. In this configuration an electro-optic Bragg reflector can be realized
Lam, Ping Koy y Ping Lam@anu edu au. "Applications of Quantum Electro-Optic Control and Squeezed Light". The Australian National University. Faculty of Science, 1999. http://thesis.anu.edu.au./public/adt-ANU20030611.170800.
Texto completoKvavle, Joshua Monroe. "A System Level Approach to D-Fiber Electric Field Sensing". Diss., CLICK HERE for online access, 2009. http://contentdm.lib.byu.edu/ETD/image/etd3155.pdf.
Texto completoXu, Yang-Cheng y 許洋誠. "Fabrication of GaAs electro-optic devices". Thesis, 1991. http://ndltd.ncl.edu.tw/handle/04249158515403572834.
Texto completoLi, Wan-Jing y 李婉靖. "Wide-Tunable Microring Devices by Electro-Optic Modulation". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/fxpet4.
Texto completo國立臺北科技大學
光電工程系研究所
101
This thesis designs a new widely tunable integrated-optic microring filter. As the electric field is applied, the homeotropically-aligned positive Δε NLC with non-rubbed alignment layers is auto-realigned along the radial electric field produced by applying voltage on the ring electrodes. The uniform distributions of liquid crystal along the circular path of the microring waveguide make the propagating optical field at any position sense the maximum refractive index change of the liquid crystal. This effect makes the resonant wavelength of the produced microring filter be widely tuned by small applied voltages. The transmission spectrum for the TE and TM polarization are measured around the wavelength 1550nm. The dependence of the resonant wavelength on the applied voltage is discussed. The threshold voltages for both polarizations are 4.5V. When the applied voltage increases from 4.5V to 16V, the resonant wavelength has a red shift for TE mode and a blue shift for TM mode. The tuning ranges for TE and TM modes can be as large as 10.1nm and 23.1nm. The tuning rate for TE and TM modes are 0.903nm/V and -1.946nm/V. The features of the devices include low modulation voltage, wide wavelength tuning range, and fabrication compatibility.
Chen, Po-Ting y 陳柏廷. "Study of Electro-Optic Modulation on LiNbO3 Microdisk Devices". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/89mfs3.
Texto completo國立臺北科技大學
光電工程系研究所
102
This thesis studies the use of electro-optic effect to modulate the resonant wavelength of the LiNbO3 microdisk. The device is fabricated by using ion implantation and chemical etching on the -z surface of LiNbO3 to produce undercut microdisk structure. The electrode on the top of the undercut microdisk cannot be wired out. In order to solve this problem, the suspended wire is produced by using optical lithography, vacuum coating, and chemical etching to connect the top electrode to the pad to form the electro-optically modulated LiNbO3 microdisk. The LiNbO3 microtoroid device is proposed to be produced by use the back-side surface thermal reflow process. Gravity and surface tension effect at the temperature, which approaches the melting point of the LiNbO3, are utilized to form the microtoroid structures. By The microtoroid characteristics are measured by using the tapered fiber coupling method. The 20μm-diameter microtoroid devices, which is treated for 9hrs using the back-side thermal reflow, has the quality factor as high as 5.9×104, which facilitates the optical second-harmonic generation on LiNbO3. The LiNbO3 elliptical microdisk device is important to achieve a directional emission microdisk laser. This work discusses the influence of the coupling position of the tapered fiber on the transmission spectra of elliptical microdisk. Experimental results show that the fiber coupling position decides whether the resonance modes can be excited. Small curvature radius on the elliptical microdisk makes the optical field in tapered fiber more easily couple into an elliptical microdisk due to its larger evanescent field range. As to the resonance wavelength and the free spectral range, the fiber position has little influence.
Yi-HsiangHsu y 徐易翔. "Design of Lithium Niobate Electro-Optic and Corrugated Waveguide Devices". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/kf3y9r.
Texto completo國立成功大學
微電子工程研究所
104
We have successfully fabricated a long-period waveguide gratings (LPWG) on lithium niobate (LiNbO3), of which cladding layer, waveguide core and phase gratings are all produced by proton exchange method. This device fabricated is a common rejection-band filter with grating pitch and grating length respectively set at 50 and 450µm. The spectral response of LPWGs are then evaluated by using optical spectrum analyzer. The result of TM transmission spectrum shows that a resonant dip with contrast of ~14.324dB occurred at wavelength λ of ~1567.04nm and FWHM of ~3.88nm are obtained. In order to analyze the dependence of resonance wavelength on temperature, a heater is placed under the device sample to control its operating temperature. Consequently, a phenomenon of blue-shift is observed as the temperature increases from RT to 50℃.
Lin, Shih-ting y 林士廷. "Fabrication and Carriers Transport Studying for Organic Electro-optic Devices". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/97873602838789296499.
Texto completo國立成功大學
光電科學與工程研究所
95
The main purpose of this dissertation is to study new fabrication processes and mechanism of carrier transport for organic optoelectronic devices. The investigations in this thesis include four parts: 1) study of polarized luminescence from organic material aligned by ion-beam-processed poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), 2) polymer light-emitting diodes with thermal inkjet printed PEDOT:PSS, 3) excimer laser irradiation induced suppression of off-state leakage current in organic thin-film transistors (OTFTs), and 4) controllable threshold voltage OTFTs by O2 plasma treatment on surface of polyurethane dielectrics. The brief descriptions of four parts are as follows, (1) Study of polarized luminescence from organic material aligned by ion-beam-processed poly(3,4-ethylenedioxythiophene): polystyrenesulfonate Currently organic light-emitting diodes (OLEDs) have attracted a lot of interests as a new display technology. In the first part, we prepare a polarized OLEDs based on 4,4’-Bis[2-9(-ethyl-3-carbazoyl)vinylenyl]-1,1’-biphenyl (BECVB), which emitted polarized blue light, aligned by ion-beam-processed and rubbing-processed hole- injecting/-transport poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer. A rubbing polyimide and photoalignment polyimide were also used to align BECVB. The dichroic ratios of linearly polarized photoluminescence of BECVB films aligning by various techniques were compared. (2)Polymer light-emitting diodes with thermal inkjet printed PEDOT:PSS In the second part, PEDOT:PSS films, prepared by inkjet-printing and spin-coating methods, have been studied using atomic force microscopy, micro-Raman spectroscopy, photoelectron spectroscopy, and four-point probe conductivity measurements. Electrical conductivity of the inkjet-printed film was enhanced by a factor of around 10 when compared to a spin-coating film. The improved conductivity was attributed to longer effective conjugation length of PEDOT chains in inkjet-printing PEDOT:PSS films as suggested by their micro-Raman spectroscopy. PEDOT:PSS films formed by the inkjet-printing method are appropriate for use as an anode for simplification of the fabrication process of polymer light-emitting diodes whose performance is about 1.2 cd/A. (3)Excimer laser irradiation induced suppression of off-state leakage current in organic transistors We report the suppression of the OFF-state leakage current and subthreshold swing (SS) in inkjet-printed poly(3-hexylthiophene) (P3HT) thin-film transistors with asymmetric work function source and drain electrodes. Indium-tin-oxide (ITO) material was used as source/drain electrodes and the source electrode was irradiated by KrF excimer laser. The dominant mechanisms for the suppressive IOFF could be attributed to the increase in the work function of ITO source irradiated by the excimer laser. Lower trap state density formed on the laser-irradiated source electrode. Holes could be easily injected into the channel at small lateral electric field resulting in smaller threshold voltage and SS. (4)Adjust threshold voltage device by O2 plasma treatment on polyurethane modified dielectrics Threshold voltage is one of the most important parameters for OTFTs. In the fourth part, we provide a new method to control the threshold voltage. A polyurethane (PU) films play the gate dielectric layers within OTFTs. The PU layer formed by spin coating and then the surface of PU treated under O2 plasma. Finally, organic polymer P3HT was inkjet-printed on the surface of PU to complete an OTFT. The threshold voltage of OTFTs increases with increasing the power of the O2 plasma. Additionally, the on-off ratio of OTFTs enhances three orders when the power of O2 plasma is above 500 W. Therefore, the method of O2 plasma treatment could effectively enhance the performance of OTFTs.
翁國斌. "Electro — Optic Characteristics of Homogeneously Aligned ECB Color Liquid — Crystal Devices". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/26572744468119799618.
Texto completo國立臺灣科技大學
高分子工程系
92
This study investigated the electro-optic characteristics of horizontal aligned ECB (Electrically Controlled Birefringence; ECB) color liquid crystal device. The experiment consisted of two parts. The first was, by changing the cell thickness (3μm, 5μm, 7μm, 10μm), incident wavelength (632.8nm, 514nm), and liquid crystal refraction anisotropy (E7( n)=0.223, ZLI-2293( n)=0.1322), to measure the electro-optic characteristics, including transmission, color shift, angle of view, and contrast. The second part used lithographic and etching technology to produce saw-tooth electrode shape on the ITO conductive layer of glass substrate, then measured the electro-optic characteristics, including transmission, angle of view, and contrast. Before electrified, the cell thickness and transmission under different liquid crystal refraction anisotropy were measured. The results showed that the long axis of liquid crystal molecule formed an angle with cross- polarized strip, and created varied hues of light with different transmission. When voltage was applied on cell with different thickness to reach maximum transmission, thicker cell required greater driving power to reach the maximum transmission, and the maximum transmission was even lower than the thin cell thickness. Thicker cell also required greater driving power to reach the same color as on thinner cell. In terms of the contrast under ECB display model, the contrast was about 20, and it would decrease as the cell thickness decreases. Use of lithographic and etching technology to produce saw-tooth electrode shape on the conductive layer of glass substrate could produce contrast as high as 140, and no reverse of gray scale on ± angle of view.
Peng, Guan-Lun y 彭冠綸. "Study of LiNbO3 Microdisk Devices with High-Efficiency Electro-Optic Modulation". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/q8rh3u.
Texto completo國立臺北科技大學
光電工程系
106
This thesis proposes a novel high-efficiency electro-optical (EO) modulated lithium niobate (LiNbO3) microdisk resonant device with the characteristics of high-efficiency EO modulation and high quality factors by a newly designed circular electrode with a contracted diameter on the microdisk connected to a suspended wire structure. The traditional EO modulators on z-cut LiNbO3 used SiO2 as a buffer layer to isolate evanescent fields from the electrodes to reduce the light absorption of the metal electrodes for reduction of the insertion loss of the components. However, because the thickness of the LiNbO3 microdisk is only 0.4 μm, the evanescent field greatly extends to the periphery of the microdisk is large. Even the SiO2 layer with the thickness up to 0.8 μm still causes serious light absorption and hinders the resonance of the light field in the microdisk. In this thesis, the shrunk top electrode and the surrounding ring electrode were fabricated on and around the microdisk respectively, and the suspended wire is designed to connect the shrunk electrode to the electrode pad outside the microdisk. By shrinking the top electrode to the un-extended range of the fundamental mode light field, not only the absorption loss of the fundamental mode is reduced, but also the light field of the high-order radial modes can be absorbed such that the resonant light field is in a single mode radial mode. This electrode design can produce a high-efficiency electro-optical modulation of resonance wavelength when a voltage is applied, and at the same time, avoid light absorption of the metal electrode, which result in the optical loss of resonance modes and the degradation of quality factor. The experimental results show that the TE resonant mode of the 20 μm microdisk device has an intrinsic quality factor of 3.04×104 when no shrinkage electrode is added. After adding top electrodes of diameter 13 μm and 15 μm, the intrinsic quality factors were 2.17×104 and 1.51×104, respectively, with only a slight decrease. The electro-optical modulation rates are 28.23 pm/V and 29.20 pm/V for the microdisk devices with the diameter of the top electrode 13 μm and 15 μm. and the microdisk/electrode spacing 1 μm. Compared with the largest EO modulation rate in the current literature (3.41pm/V, Opt. Express 25(1), 124-129, 2017), the EO modulation rate of the microdisk device proposed in this thesis can be increased by up to 8.28 and 8.56 times. In the study of ZnO-diffusion-tuned LiNbO3 microdisk devices, the main purpose is to selectively tune the radial modes in the microdisk. Due to the light field of lower-order radial modes distributed on the microdisk periphery and that of higher-order radial modes extending toward the microdisk center, different radial modes could be affected by diffusing the ZnO film on the microdisk periphery and the microdisk center or edge of microdisk. The resultant refractive index distribution can be used to control the resonant characteristic of higher-order and lower-order radial modes. The results for TE mode shows that the tuning rates are -0.12nm/hr, -0.16nm/hr, and -0.18nm/hr for the ring diffusion region with width 2, 3 and 4 m, respectively. For the central diffusion region with the diameter of 10, 12 m, the tuning rates were -0.12nm/hr and 0.10nm/hr, respectively.
Lin, Che-Yun. "Silicon integrated nanophotonic devices for on-chip optical interconnects". Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5720.
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Nevers, Corey A. "Electro-optic characterization of SrS-based alternating current thin-film electroluminescent devices". Thesis, 1999. http://hdl.handle.net/1957/34180.
Texto completoGraduation date: 2000
Lee, Beom Suk 1974. "Novel EO polymer-based micro- and nano photonic devices for analog and digital communications". Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-2673.
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Chiou, Yu-Huei y 邱玉蕙. "Optical Absorption Properties of Antisymmetric Coupled Wells and Their Application to Self-Electro-Optic-Effect Devices". Thesis, 1996. http://ndltd.ncl.edu.tw/handle/31707600744022812676.
Texto completoChang, Jui-Wen y 張瑞文. "The investigation and development of the electro-optic quasi-phase matching photonic devices in lithium niobate". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/68308118895670368009.
Texto completo國立中央大學
光電科學與工程學系
102
Under the influence of the electric field in the direction of crystallographic z axis of the periodically poled lithium niobate (PPLN), a periodically varying permittivity along the crystallographic x axis will be produced. Such a device is called EO PPLN grating which can cause the reciprocal vector to compensate the phase mismatch between the incident extraordinary beam and its first order Bragg diffracted extraordinary beam in the device. In this dissertation, we developed a theoretical model to investigate and analyze the Bragg diffraction behavior of a Gaussian beam that interacts with such a device. This model can also be used to evaluate the performance of volume gratings in an optical system. For an electric field along the crystallographic y axis of the PPLN, the polarization state of the light which propagates along x axis in the PPLN can be modulated efficiently, and it has been explored and exploited to demonstrate efficient and fast polarization-mode converter (PMC). In this dissertation, we integrated two PPLN EO PMCs with a PPLN optical parametric gain medium in a monolithic LiNbO3 to achieve unique spectral manipulations in an optical parametric oscillator (OPO) system. With this kind of EO effect in, say an, annealed proton-exchanged PPLN waveguides, we report the design and experimental demonstration of electro-optically active TM-guided to TE-radiation mode converters. The devices demonstrated in this research have the potential for practical application. To further integrate the devices with other PPLN or APPLN structure with different optical functions in a monolithic LiNbO3 crystal, such devices can find many applications in optical communications or an electro-optic Q-switched and wavelength-tunable laser system.
Mendes, James Kevin. "Sine burst waveform aging and electro-optic characterization of ALE ZnS:Mn ACTFEL devices for head-mounted active matrix displays". Thesis, 1997. http://hdl.handle.net/1957/34306.
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