Artículos de revistas sobre el tema "Electrical dopant activation"
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Kennedy, Noel, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes y Brenda Long. "Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates". Beilstein Journal of Nanotechnology 9 (6 de agosto de 2018): 2106–13. http://dx.doi.org/10.3762/bjnano.9.199.
Texto completoWang, Xiqiao, Joseph A. Hagmann, Pradeep Namboodiri, Jonathan Wyrick, Kai Li, Roy E. Murray, Alline Myers et al. "Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers". Nanoscale 10, n.º 9 (2018): 4488–99. http://dx.doi.org/10.1039/c7nr07777g.
Texto completoChung, Suk, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith y Martha R. McCartney. "Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography". IEEE Transactions on Electron Devices 56, n.º 10 (septiembre de 2009): 1919–23. http://dx.doi.org/10.1109/ted.2009.2025914.
Texto completoWeber, W. J., C. W. Griffin y J. L. Bates. "Electrical and thermal transport properties of the Y1 − x Mx CrO3 system". Journal of Materials Research 1, n.º 5 (octubre de 1986): 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.
Texto completoRanchoux, B. y J. F. Currie. "Étude des corrélations entre paramètres de préparation, caractéristiques électriques et physico-chimiques d'échantillons de a-Si : H dopés ou non". Canadian Journal of Physics 63, n.º 1 (1 de enero de 1985): 54–58. http://dx.doi.org/10.1139/p85-009.
Texto completoBrandt, Matthias, Holger von Wenckstern, Christoph Meinecke, Tilman Butz, Holger Hochmuth, Michael Lorenz y Marius Grundmann. "Dopant activation in homoepitaxial MgZnO:P thin films". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, n.º 3 (2009): 1604. http://dx.doi.org/10.1116/1.3086657.
Texto completoCifuentes, N., E. R. Viana, H. Limborço, D. B. Roa, A. Abelenda, M. I. N. da Silva, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira y J. C. González. "Electrical Properties of Polytypic Mg Doped GaAs Nanowires". Journal of Nanomaterials 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/9451319.
Texto completoSierakowski, Kacper, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi y Michal Bockowski. "High Pressure Processing of Ion Implanted GaN". Electronics 9, n.º 9 (26 de agosto de 2020): 1380. http://dx.doi.org/10.3390/electronics9091380.
Texto completoSong, Xi, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard y Daniel Alquier. "Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements". Materials Science Forum 679-680 (marzo de 2011): 193–96. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.193.
Texto completoRahim, Madatov, Najafov Arzu, Alakbarov Aydin, Tagiev Teymur y Khaliqzadeh Aydan. "Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals". Zeitschrift für Naturforschung A 74, n.º 9 (25 de septiembre de 2019): 821–25. http://dx.doi.org/10.1515/zna-2018-0475.
Texto completoOttaviani, Laurent, Stéphane Biondo, Stéphane Morata, Olivier Palais, Thierry Sauvage y Frank Torregrosa. "Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples". Materials Science Forum 645-648 (abril de 2010): 717–20. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.717.
Texto completoJamal, Raied K. "Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition". Iraqi Journal of Physics (IJP) 14, n.º 29 (3 de febrero de 2019): 37–43. http://dx.doi.org/10.30723/ijp.v14i29.218.
Texto completoMorata, Stéphane, Frank Torregrosa y Thierry Bouchet. "Simulation of Ion Implantation in SiC: Dopant Profiling and Activation". Materials Science Forum 615-617 (marzo de 2009): 449–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.449.
Texto completoWeng, Ming Hung, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore di Franco, Corrado Bongiorno, Mario Saggio y Vito Raineri. "Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC". Materials Science Forum 645-648 (abril de 2010): 713–16. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.713.
Texto completoPelaz, L., M. Aboy, P. Lopez y L. A. Marques. "Atomistic modeling of dopant implantation, diffusion, and activation". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, n.º 5 (2006): 2432. http://dx.doi.org/10.1116/1.2348726.
Texto completoChen, Z. M., S. K. Wong, P. K. John, M. Prasad y B. Y. Tong. "Crystallization and dopant activation of amorphous silicon films by light annealing". Canadian Journal of Physics 63, n.º 6 (1 de junio de 1985): 719–22. http://dx.doi.org/10.1139/p85-113.
Texto completoZhang, Xiaolong, Wipakorn Jevasuwan y Naoki Fukata. "Interfacial intermixing of Ge/Si core–shell nanowires by thermal annealing". Nanoscale 12, n.º 14 (2020): 7572–76. http://dx.doi.org/10.1039/c9nr09938g.
Texto completoStepura, A. L., O. I. Aksimentyeva y P. Yu Demchenko. "Features of the Structure and Physical-Chemical Properties of Poly-Ortho-Toluidine Doped with Toluenesulfonic Acid". Фізика і хімія твердого тіла 20, n.º 1 (1 de abril de 2019): 77–82. http://dx.doi.org/10.15330/pcss.20.1.82.
Texto completoBlanqué, Servane, R. Pérez, Narcis Mestres, Sylvie Contreras, Jean Camassel y Phillippe Godignon. "Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers". Materials Science Forum 527-529 (octubre de 2006): 795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.795.
Texto completoPanknin, D., E. Wieser, R. Grötzschel, C. E. Richter, M. Gericke, Ya V. Fattachov y I. B. Khaibullin. "Dopant distribution and electrical activation of Si implanted GaAs by short time annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (enero de 1987): 492–95. http://dx.doi.org/10.1016/s0168-583x(87)80098-8.
Texto completoQueirolo, G., C. Bresolin, D. Robba, M. Anderle, R. Canteri, A. Armigliato, G. Ottaviani y S. Frabboni. "Low temperature dopant activation of BF2 implanted silicon". Journal of Electronic Materials 20, n.º 5 (mayo de 1991): 373–78. http://dx.doi.org/10.1007/bf02670886.
Texto completoAl-Douri, Ala J., F. Y. Al-Shakily, Abdalla A. Alnajjar y Maysoon F. A. Alias. "The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films". Advances in Condensed Matter Physics 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/910967.
Texto completoAbdul Karim, Hussein Jamal y Ghuson H. Mohammed. "Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique". Iraqi Journal of Physics (IJP) 19, n.º 49 (18 de mayo de 2021): 75–81. http://dx.doi.org/10.30723/ijp.v19i49.608.
Texto completoBhabad, V. D. "Electrical, Thermoelectrical and PEC Studies of Copper Doped CdSe Thin Films". International Journal for Modern Trends in Science and Technology 6, n.º 5 (26 de mayo de 2020): 60–66. http://dx.doi.org/10.46501/ijmtst060510.
Texto completoAhmad, Afaq. "Composition-induced phase transition in a [Ag2HgI4:0.2AgI] mixed composite system doped with CuI". Open Chemistry 8, n.º 6 (1 de diciembre de 2010): 1227–35. http://dx.doi.org/10.2478/s11532-010-0098-8.
Texto completoKögler, Reinhard, Xin Ou, Nadine Geyer, Pratyush Das Kanungo, Daniel Schwen, Peter Werner y Wolfgang Skorupa. "Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy". Solid State Phenomena 178-179 (agosto de 2011): 50–55. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.50.
Texto completoSOBHY, MAGED S. "EFFECT OF Ni ON THE ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF NANOCRYSTALLITES Fe2O3/TiO2 SYSTEM". Surface Review and Letters 13, n.º 04 (agosto de 2006): 479–84. http://dx.doi.org/10.1142/s0218625x06008712.
Texto completoZographos, Nikolas y Axel Erlebach. "Process simulation of dopant diffusion and activation in germanium". physica status solidi (a) 211, n.º 1 (5 de diciembre de 2013): 143–46. http://dx.doi.org/10.1002/pssa.201300123.
Texto completoFrazzetto, Alessia, Fabrizio Roccaforte, Filippo Giannazzo, R. Lo Nigro, M. Saggio, Edoardo Zanetti y Vito Raineri. "Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC". Materials Science Forum 717-720 (mayo de 2012): 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.825.
Texto completoLee, Yao-Jen, Shang-Shiun Chuang, Fu-Kuo Hsueh, Ho-Ming Lin, Shich-Chuang Wu, Ching-Yi Wu y Tseung-Yuen Tseng. "Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing". IEEE Electron Device Letters 32, n.º 2 (febrero de 2011): 194–96. http://dx.doi.org/10.1109/led.2010.2090937.
Texto completoIrfan, M. y A. Shakoor. "Structural and electrical properties of dodecylbenzene sulphonicacid doped polypyrrole/zirconium oxide composites". Revista Mexicana de Física 65, n.º 6 Nov-Dec (31 de octubre de 2019): 607. http://dx.doi.org/10.31349/revmexfis.65.607.
Texto completoSpera, Monia, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo y Fabrizio Roccaforte. "Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings". Materials 12, n.º 21 (23 de octubre de 2019): 3468. http://dx.doi.org/10.3390/ma12213468.
Texto completoChen, Li An, En Hai Jiang, Xing Feng Zhu y Ling Fu Chen. "Novel diffusions of interstitial atoms in II–VI compounds zinc selenide". Modern Physics Letters B 29, n.º 11 (30 de abril de 2015): 1550044. http://dx.doi.org/10.1142/s021798491550044x.
Texto completoSaid, Muzalifah Mohd, Zul Atfyi Fauzan Mohammed Napiah, Faiz Arith y Zarina Mohd Noh. "NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation". Advanced Materials Research 716 (julio de 2013): 248–53. http://dx.doi.org/10.4028/www.scientific.net/amr.716.248.
Texto completoKhramtsov, Igor A. y Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors". Materials 12, n.º 12 (19 de junio de 2019): 1972. http://dx.doi.org/10.3390/ma12121972.
Texto completoChandra, Aditi, Mao Takashima y Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils". MRS Advances 2, n.º 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.
Texto completoSong, Xi, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard y Daniel Alquier. "Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si". Materials Science Forum 711 (enero de 2012): 154–58. http://dx.doi.org/10.4028/www.scientific.net/msf.711.154.
Texto completoRamelow, Ulku S., Samantha N. Braganza y Gerald J. Ramelow. "Electrical conductivities of photochemically prepared polyethylene glycol dimethacrylate, reacted with iodine and lithium perchlorate dopants and activation energy determination for polymer-dopant interaction". Journal of Applied Polymer Science 112, n.º 4 (15 de mayo de 2009): 1916–26. http://dx.doi.org/10.1002/app.29759.
Texto completoLanza, F., R. Feduzi y J. Fuger. "Effects of lithium oxide on the electrical properties of CuO at low temperatures". Journal of Materials Research 5, n.º 8 (agosto de 1990): 1739–44. http://dx.doi.org/10.1557/jmr.1990.1739.
Texto completoFolkersma, Steven, Janusz Bogdanowicz, Paola Favia, Lennaert Wouters, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Former Nielsen, Lior Shiv y Wilfried Vandervorst. "Apparent size effects on dopant activation in nanometer-wide Si fins". Journal of Vacuum Science & Technology B 39, n.º 2 (marzo de 2021): 023202. http://dx.doi.org/10.1116/6.0000921.
Texto completoBazin, Anne Elisabeth, Frédéric Cayrel, Mohamed Lamhamdi, Arnaud Yvon, Jean Christophe Houdbert, Emmanuel Collard y Daniel Alquier. "Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon". Materials Science Forum 711 (enero de 2012): 213–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.213.
Texto completoMolnar, Wolfgang, Alois Lugstein, Tomasz Wojcik, Peter Pongratz, Norbert Auner, Christian Bauch y Emmerich Bertagnolli. "Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor". Beilstein Journal of Nanotechnology 3 (31 de julio de 2012): 564–69. http://dx.doi.org/10.3762/bjnano.3.65.
Texto completoTakeuchi, H., P. Ranade y Tsu-Jae King. "Suppression of boron TED by low temperature SPC anneal prior to dopant activation". IEEE Transactions on Electron Devices 49, n.º 12 (diciembre de 2002): 2343–44. http://dx.doi.org/10.1109/ted.2002.804694.
Texto completoVemuri, Rajitha N. P., Mandar J. Gadre, N. D. Theodore y T. L. Alford. "Dopant Activation in Arsenic-Implanted Si by Susceptor-Assisted Low-Temperature Microwave Anneal". IEEE Electron Device Letters 32, n.º 8 (agosto de 2011): 1122–24. http://dx.doi.org/10.1109/led.2011.2157453.
Texto completoHansen, K., E. Peiner, A. Schlachetzki y M. Von Ortenberg. "Dopant activation energy and hole effective mass in heavily Zn-Doped InP". Journal of Electronic Materials 23, n.º 9 (septiembre de 1994): 935–41. http://dx.doi.org/10.1007/bf02655368.
Texto completoPriolo, Francesco, Giovanni Mannino, Monica Miccichè, Vittorio Privitera, Enrico Napolitani y Alberto Carnera. "Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si". Applied Physics Letters 72, n.º 23 (8 de junio de 1998): 3011–13. http://dx.doi.org/10.1063/1.121524.
Texto completoKato, Juri. "The Annealing Time and Temperature Dependence of Electrical Dopant Activation in High‐Dose BF 2 Ion Implanted Silicon". Journal of The Electrochemical Society 141, n.º 11 (1 de noviembre de 1994): 3158–61. http://dx.doi.org/10.1149/1.2059294.
Texto completoBranz, Howard M. y Brian A. Gregg. "Dopant Pairing in a Molecular Semiconductor". MRS Proceedings 725 (2002). http://dx.doi.org/10.1557/proc-725-p4.2.
Texto completoKlappe, Jos G. E., István Bársony, Pierre H. Woerlee, Tom W. Ryan y P. Alkemade. "Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction". MRS Proceedings 342 (1994). http://dx.doi.org/10.1557/proc-342-363.
Texto completoChao, Y. L., S. Prussin, J. C. S. Woo y R. Scholz. "Dopant Activation in bulk germanium and Germanium-on-Insulator". MRS Proceedings 829 (2004). http://dx.doi.org/10.1557/proc-829-b9.18.
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