Literatura académica sobre el tema "Double Heterojunction Bipolar Transistor"
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Artículos de revistas sobre el tema "Double Heterojunction Bipolar Transistor"
Magno, R., J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, D. Park y N. A. Papanicolaou. "InAlAsSb∕InGaSb double heterojunction bipolar transistor". Electronics Letters 41, n.º 6 (2005): 370. http://dx.doi.org/10.1049/el:20058107.
Texto completoYan, B. P., C. C. Hsu, X. Q. Wang y E. S. Yang. "InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor". Electronics Letters 38, n.º 6 (2002): 289. http://dx.doi.org/10.1049/el:20020201.
Texto completoLIU, QINGMIN, SURAJIT SUTAR y ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR". International Journal of High Speed Electronics and Systems 14, n.º 03 (septiembre de 2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.
Texto completoChang, P. C., A. G. Baca, N. Y. Li, X. M. Xie, H. Q. Hou y E. Armour. "InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor". Applied Physics Letters 76, n.º 16 (17 de abril de 2000): 2262–64. http://dx.doi.org/10.1063/1.126315.
Texto completoCoquillat, D., V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel et al. "High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors". International Journal of High Speed Electronics and Systems 25, n.º 03n04 (septiembre de 2016): 1640011. http://dx.doi.org/10.1142/s0129156416400115.
Texto completoPelouard, J.-L., P. Hesto y R. Castagné. "Monte-Carlo study of the double heterojunction bipolar transistor". Solid-State Electronics 31, n.º 3-4 (marzo de 1988): 333–36. http://dx.doi.org/10.1016/0038-1101(88)90289-4.
Texto completoLew, K. L. y S. F. Yoon. "Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor". Journal of Applied Physics 89, n.º 6 (15 de marzo de 2001): 3464–68. http://dx.doi.org/10.1063/1.1343888.
Texto completoPrinz, E. J., X. Xiao, P. V. Schwartz y J. C. Sturm. "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic". IEEE Transactions on Electron Devices 39, n.º 11 (1992): 2636–37. http://dx.doi.org/10.1109/16.163484.
Texto completoYamina, Berrichi y Ghaffour Kherreddine. "Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor". International Journal of Electrical and Computer Engineering (IJECE) 5, n.º 3 (1 de junio de 2015): 525. http://dx.doi.org/10.11591/ijece.v5i3.pp525-530.
Texto completoLee, Geonyeop, Stephen J. Pearton, Fan Ren y Jihyun Kim. "Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)". Advanced Electronic Materials 5, n.º 3 (marzo de 2019): 1970015. http://dx.doi.org/10.1002/aelm.201970015.
Texto completoTesis sobre el tema "Double Heterojunction Bipolar Transistor"
Ang, Oon Sim. "Modeling of double heterojunction bipolar transistors". Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29458.
Texto completoApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
BALARAMAN, PRADEEP ARUGUNAM. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS". University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.
Texto completoFlitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors". Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.
Texto completoSchnyder, Iwan. "An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /". Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.
Texto completoZhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Texto completoLee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors". Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.
Texto completoBalaraman, Pradeep A. "Design, simulation and modelling of InP/GaAsSb/InP double heterojunction bipolar transistors". Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1069275786.
Texto completoBauknecht, Raimond. "InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems /". [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12455.
Texto completoMohiuddin, Muhammad. "InGaAs/InA1As Double Heterojunction Bipolar transistors for high-speed, low-power digital applications". Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.511942.
Texto completoSchneider, Karl. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors". Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=979772826.
Texto completoLibros sobre el tema "Double Heterojunction Bipolar Transistor"
An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits. Konstanz: Hartung-Gorre Verlag, 2005.
Buscar texto completoLam, Pui Leng. InGaAs-InAIAs N-P-N double heterojunction bipolar transistors grown by molecular beam epitaxy. Manchester: UMIST, 1995.
Buscar texto completoHammer, Urs. Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits. Konstanz: Hartung-Gorre, 2010.
Buscar texto completoChink, Hope Wuming. Emitter-up heterojunction bipolar transistor compatible laser. Ottawa: National Library of Canada, 1998.
Buscar texto completoYoung, Stephen M. A superlattice emitter structure for a heterojunction bipolar transistor. Manchester: UMIST, 1993.
Buscar texto completoXavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.
Buscar texto completoLebby, Michael Stephen. Fabrication and characterisation of the heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BICFET): Characterisations of HFETs.... Bradford, 1987.
Buscar texto completoCapítulos de libros sobre el tema "Double Heterojunction Bipolar Transistor"
Ramberg, L. P., P. M. Enquist, Y. K. Chen, F. E. Najjar, L. F. Eastman, E. A. Fitzgerald y K. L. Kavanagh. "Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors". En High-Speed Electronics, 168–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_34.
Texto completoWei, C. J., H. C. Chung, Y. A. Tkachenko y J. C. M. Hwang. "Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors". En Simulation of Semiconductor Devices and Processes, 298–301. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_72.
Texto completoPelouard, J. L., P. Hesto, J. P. Praseuth y L. Goldstein. "InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation". En High-Speed Electronics, 164–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_33.
Texto completoAhmad, Md Mufassal, Md Faiaad Rahman y Tahmid Aziz Chowdhury. "Performance Analysis of MgF2-Si3N4 and MgF2-Ta2O5 Double-Layer Anti-reflection Coating on Heterojunction Bipolar Transistor Solar Cell". En Lecture Notes in Electrical Engineering, 285–94. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1978-6_25.
Texto completoDubon-Chevallier, C., P. Desrousseaux, A. M. Duchenois, C. Besombes, J. Dangla, C. Bacot y D. Ankri. "Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison". En High-Speed Electronics, 151–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_30.
Texto completoCressler, John D. "Silicon-Germanium Heterojunction Bipolar Transistor". En Device and Circuit Cryogenic Operation for Low Temperature Electronics, 69–84. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_4.
Texto completoSu, L. M., N. Grote, P. Schumacher y D. Franke. "Implanted-collector InGaAsP/InP Heterojunction Bipolar Transistor". En ESSDERC ’89, 275–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_57.
Texto completoDas, Arnima, Maitreyi Ray Kanjilal y Payel Biswas. "Frequency Response of Si/SiGe Heterojunction Bipolar Transistor". En Computational Advancement in Communication Circuits and Systems, 339–44. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2274-3_37.
Texto completoAsbeck, P. M. "Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits". En Picosecond Electronics and Optoelectronics, 32–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_5.
Texto completoTeeter, Douglas A., Jack R. East, Richard K. Mains y George I. Haddad. "A Numerical Large Signal Model for the Heterojunction Bipolar Transistor". En Computational Electronics, 43–46. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_7.
Texto completoActas de conferencias sobre el tema "Double Heterojunction Bipolar Transistor"
Yu-Qiu Chen y Shiou-Ying Cheng. "An InP/InGaAs double heterojunction bipolar transistor". En 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061115.
Texto completoDiouf, I., P. Nouvel, L. Varani, A. Penarier, N. Diakonova, D. Coquillat, V. Nodjiadjim et al. "Double-Heterojunction Bipolar Transistor as THz Detector for Communications". En 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. http://dx.doi.org/10.1109/irmmw-thz50926.2021.9566983.
Texto completoCoquillat, D., V. Nodjiadjim, A. Konczykowska, M. Riet, N. Dyakonova, C. Consejo, F. Teppe, J. Godin y W. Knap. "InP double heterojunction bipolar transistor as sub-terahertz detector". En 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2014. http://dx.doi.org/10.1109/irmmw-thz.2014.6956515.
Texto completoLiu, Min, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou y Lifan Wu. "Geometrical scaling effects in InP/InGaAs double heterojunction bipolar transistor". En 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021230.
Texto completoCoquillat, D., V. Nodjiadjim, A. Konczykowska, N. Dyakonova, C. Consejo, S. Ruffenach, F. Teppe et al. "InP double heterojunction bipolar transistor for detection above 1 THz". En 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327777.
Texto completoArabhavi, Akshay Mahadev, Sara Hamzeloui, Filippo Ciabattini, Olivier Ostinelli y Colombo R. Bolognesi. "Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors". En 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.j-3-01.
Texto completoBolognesi, C. R., A. M. Arabhavi, W. Quan, O. Ostinelli, X. Wen y M. Luisier. "Advances in InP Double Heterojunction Bipolar Transistors". En 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.d-5-01.
Texto completoOkada, Y., K. Tada, R. J. Simes, L. A. Coldren y J. L. Merz. "GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator". En 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-c-6.
Texto completoHIDAKA, Osamu, Kouhei MORIZUKA y Hiroshi MOCHIZUKI. "Thermal Runaway Tolerance in Double Heterojunction Bipolar Transistors". En 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.d-2-3.
Texto completoZhou, Xingbao, Shouli Zhou, Hao Wen, Hongliang Ren, Guiyong Huang, Jun Xu y Yuhua Wang. "Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor". En 2014 IEEE 9th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2014. http://dx.doi.org/10.1109/iciea.2014.6931447.
Texto completoInformes sobre el tema "Double Heterojunction Bipolar Transistor"
Rodwell, Mark, M. Urtega, D. Scott, M. Dahlstrom y Y. Betser. Ultra High Speed Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, enero de 2000. http://dx.doi.org/10.21236/ada413790.
Texto completoMiller, D. L. y P. M. Asbeck. Fundamental Aspects of Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, julio de 1986. http://dx.doi.org/10.21236/ada171225.
Texto completoGillespie, James K. AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development. Fort Belvoir, VA: Defense Technical Information Center, octubre de 2001. http://dx.doi.org/10.21236/ada415646.
Texto completoPatrizi, G. A., M. L. Lovejoy, R. P. Jr Schneider, H. Q. Hou y P. M. Enquist. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Office of Scientific and Technical Information (OSTI), diciembre de 1995. http://dx.doi.org/10.2172/212553.
Texto completoLong, Stephen I., Herbert Kroemer y M. A. Rao. Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. Fort Belvoir, VA: Defense Technical Information Center, octubre de 1986. http://dx.doi.org/10.21236/ada174580.
Texto completoMitchell, Gregory A. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 2011. http://dx.doi.org/10.21236/ada552934.
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