Bibliografías temáticas / Diode à avalanche à photon unique

Literatura académica sobre el tema "Diode à avalanche à photon unique"

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Publicado: 6 de julio de 2024

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  1. Artículos de revistas
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  4. Actas de conferencias

Artículos de revistas sobre el tema "Diode à avalanche à photon unique":

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Finkelstein, H., M. J. Hsu y S. C. Esener. "Dual-junction single-photon avalanche diode". Electronics Letters 43, n.º 22 (2007): 1228. http://dx.doi.org/10.1049/el:20072355.

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Kodet, Jan, Ivan Prochazka, Josef Blazej, Xiaoli Sun y John Cavanaugh. "Single photon avalanche diode radiation tests". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (diciembre de 2012): 309–12. http://dx.doi.org/10.1016/j.nima.2011.11.001.

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Lee, Changhyuk, Ben Johnson y Alyosha Molnar. "Angle sensitive single photon avalanche diode". Applied Physics Letters 106, n.º 23 (8 de junio de 2015): 231105. http://dx.doi.org/10.1063/1.4922526.

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Zappa, F., A. Gulinatti, P. Maccagnani, S. Tisa y S. Cova. "SPADA: single-photon avalanche diode arrays". IEEE Photonics Technology Letters 17, n.º 3 (marzo de 2005): 657–59. http://dx.doi.org/10.1109/lpt.2004.840920.

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Chen, Zhen, Bo Liu, Guangmeng Guo, Kangjian Hua y Weiqiang Han. "Photon Counting Heterodyne With a Single Photon Avalanche Diode". IEEE Photonics Technology Letters 33, n.º 17 (1 de septiembre de 2021): 931–34. http://dx.doi.org/10.1109/lpt.2021.3098553.

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Tisa, S., F. Zappa, A. Tosi y S. Cova. "Electronics for single photon avalanche diode arrays". Sensors and Actuators A: Physical 140, n.º 1 (octubre de 2007): 113–22. http://dx.doi.org/10.1016/j.sna.2007.06.022.

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Li, Yichen, Majid Safari, Robert Henderson y Harald Haas. "Optical OFDM With Single-Photon Avalanche Diode". IEEE Photonics Technology Letters 27, n.º 9 (1 de mayo de 2015): 943–46. http://dx.doi.org/10.1109/lpt.2015.2402151.

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Li, Li‐Qiang y Lloyd M. Davis. "Single photon avalanche diode for single molecule detection". Review of Scientific Instruments 64, n.º 6 (junio de 1993): 1524–29. http://dx.doi.org/10.1063/1.1144463.

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Dalla Mora, Alberto, Alberto Tosi, Simone Tisa y Franco Zappa. "Single-Photon Avalanche Diode Model for Circuit Simulations". IEEE Photonics Technology Letters 19, n.º 23 (diciembre de 2007): 1922–24. http://dx.doi.org/10.1109/lpt.2007.908768.

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Lacaita, A., M. Ghioni y S. Cova. "Double epitaxy improves single-photon avalanche diode performance". Electronics Letters 25, n.º 13 (1989): 841. http://dx.doi.org/10.1049/el:19890567.

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Artículos de revistas Tesis

Tesis sobre el tema "Diode à avalanche à photon unique":

1

B??rub??, Beno??t-Louis. "Conception de matrices de diodes avalanche ?? photon unique sur circuits int??gr??s CMOS 3D". Thèse, Universit?? de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.

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La photod??tection est un sujet de recherche tr??s actif encore de nos jours et l???industrie, particuli??rement de la physique des hautes ??nergies et de l???imagerie m??dicale, est en qu??te de d??tecteurs avec une plus grande sensibilit??, de meilleures r??solutions temporelles et une plus grande densit?? d???int??gration. Pour ces raisons, les photodiodes avalanche ?? photon unique (Single photon avalanche diode, ou SPAD) suscitent beaucoup d???int??r??t depuis quelques ann??es pour ses performances en temps et sa grande photosensibilit??. Les SPAD sont des photodiodes avalanche op??r??es au-dessus de la tension de claquage et un photoporteur atteignant la r??gion de multiplication peut ?? lui seul d??clencher une avalanche soutenue de porteurs et entra??ner le claquage de la jonction. Un circuit d??tecte le courant divergent et l?????touffe en abaissant la polarisation de la jonction sous la tension de claquage. Le circuit recharge ensuite la jonction en r??appliquant la tension initiale permettant la d??tection d???un nouveau photon. Dans le but d???augmenter le nombre de photons simultan??s d??tectables, les SPAD s???int??grent en matrice. Cependant, dans le cas o?? une matrice de SPAD et leurs circuits d?????touffement s???int??grent sur le m??me substrat, la surface photosensible devient limit??e par l???espace qu???occupent les circuits d?????touffement. Dans le but d???augmenter leur r??gion photosensible, les matrices de SPAD peuvent s???int??grer en trois dimensions (3D) avec leurs circuits d?????touffement. Ce projet porte sur le d??veloppement de matrices de SPAD en technologie CMOS HV 0,8 ??m de Teledyne DALSA d??di??es ?? une int??gration 3D avec leurs circuits d?????touffement actifs. Les r??sultats de caract??risation montrent que les SPAD atteignent une r??solution temporelle de 27 ps largeur ?? mi hauteur (LMH), poss??dent un taux de comptage en obscurit?? (DCR, ou Dark Count Rate) de 3 s[indice sup??rieur -1]??m[indice sup??rieur -2] et ont une probabilit?? de photod??tection (PDP) de 49 %. De plus, une m??thode d???isolation utilisant un puits p a ??t?? d??velopp??e. Les SPAD con??us avec cette m??thode ont un facteur de remplissage pouvant atteindre 54 % et une probabilit?? de diaphonie de 6,6 % ?? une tension exc??dentaire ?? la tension de claquage (V[indice inf??rieur E]) de 4 V.
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Bérubé, Benoît-Louis. "Conception de matrices de diodes avalanche à photon unique sur circuits intégrés CMOS 3D". Thèse, Université de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.

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La photodétection est un sujet de recherche très actif encore de nos jours et l’industrie, particulièrement de la physique des hautes énergies et de l’imagerie médicale, est en quête de détecteurs avec une plus grande sensibilité, de meilleures résolutions temporelles et une plus grande densité d’intégration. Pour ces raisons, les photodiodes avalanche à photon unique (Single photon avalanche diode, ou SPAD) suscitent beaucoup d’intérêt depuis quelques années pour ses performances en temps et sa grande photosensibilité. Les SPAD sont des photodiodes avalanche opérées au-dessus de la tension de claquage et un photoporteur atteignant la région de multiplication peut à lui seul déclencher une avalanche soutenue de porteurs et entraîner le claquage de la jonction. Un circuit détecte le courant divergent et l’étouffe en abaissant la polarisation de la jonction sous la tension de claquage. Le circuit recharge ensuite la jonction en réappliquant la tension initiale permettant la détection d’un nouveau photon. Dans le but d’augmenter le nombre de photons simultanés détectables, les SPAD s’intègrent en matrice. Cependant, dans le cas où une matrice de SPAD et leurs circuits d’étouffement s’intègrent sur le même substrat, la surface photosensible devient limitée par l’espace qu’occupent les circuits d’étouffement. Dans le but d’augmenter leur région photosensible, les matrices de SPAD peuvent s’intégrer en trois dimensions (3D) avec leurs circuits d’étouffement. Ce projet porte sur le développement de matrices de SPAD en technologie CMOS HV 0,8 µm de Teledyne DALSA dédiées à une intégration 3D avec leurs circuits d’étouffement actifs. Les résultats de caractérisation montrent que les SPAD atteignent une résolution temporelle de 27 ps largeur à mi hauteur (LMH), possèdent un taux de comptage en obscurité (DCR, ou Dark Count Rate) de 3 s[indice supérieur -1]µm[indice supérieur -2] et ont une probabilité de photodétection (PDP) de 49 %. De plus, une méthode d’isolation utilisant un puits p a été développée. Les SPAD conçus avec cette méthode ont un facteur de remplissage pouvant atteindre 54 % et une probabilité de diaphonie de 6,6 % à une tension excédentaire à la tension de claquage (V[indice inférieur E]) de 4 V.
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Sicre, Mathieu. "Study of the noise aging mechanisms in single-photon avalanche photodiode for time-of-flight imaging". Electronic Thesis or Diss., Lyon, INSA, 2023. http://www.theses.fr/2023ISAL0104.

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Les diodes à avalanche à photon unique (SPAD) sont utilisées pour les capteurs à temps de vol afin de déterminer la distance d'une cible. Cependant, ils sont sujets à des déclenchements parasites par des porteurs de charge générés de manière parasitaire, quantifiés en tant que taux de comptage dans l’obscurité (DCR), ce qui peut compromettre la précision de la distance mesurée. Pour résoudre ce problème, une méthodologie de simulation a été mise en place pour évaluer le DCR. Cela est réalisé en simulant la probabilité de claquage d'avalanche, intégrée avec le taux de génération de porteurs de charge à partir de défauts. Cette méthodologie permet d'identifier les sources potentielles de DCR avant stress. Pour garantir l'intégrité des mesures de distance sur une longue période, il est nécessaire de prédire le niveau de DCR dans diverses conditions d'exploitation. La méthodologie de simulation susmentionnée est utilisée pour identifier les sources potentielles de DCR après stress. Pour un modèle cinétique précis de dégradation de type porteurs chauds (HCD), il est essentiel de considérer non seulement la distribution d'énergie des porteurs, mais également la distribution de l'énergie de dissociation de la liaison Si-H à l'interface Si/SiO2. La probabilité de dissociation d'ionisation d'impact est utilisée pour modéliser le processus de création de défauts, qui présente une dépendance temporelle sous-linéaire en raison de l'épuisement progressif des précurseurs de défauts. Une mesure précise de la distance nécessite de distinguer le signal du bruit ambiant et du plancher de DCR. L'impact de DCR peut être estimé en considérant la réflectance de la cible et les conditions d'éclairage ambiant. En résumé, ce travail utilise une méthodologie de caractérisation et de simulation approfondie pour prédire le DCR dans les dispositifs de type SPAD le long de sa durée de vie, permettant ainsi d'évaluer son impact sur les mesures de distance
Single-Photon Avalanche Diode (SPAD) are used for Time-of-Flight (ToF) sensors to determine distance from a target by measuring the travel time of an emitted pulsed signal. These photodetectors work by triggering an avalanche of charge carriers upon photon absorption, resulting in a substantial amplification which can be detected. However, they are subject to spurious triggering by parasitic generated charge carriers, quantified as Dark Count Rate (DCR), which can compromise the accuracy of the measured distance. Therefore, it is crucial to identify and eliminate the potential source of DCR. To tackle this issue, a simulation methodology has been implemented to assess the DCR. This is achieved by simulating the avalanche breakdown probability, integrated with the carrier generation rate from defects. The breakdown probability can be simulated either in a deterministically, based on electric-field streamlines, or stochastically, by means of drift-diffusion simulation of the random carrier path. This methodology allows for the identification of the potential sources of pre-stress DCR by comparing simulation results to experimental data over a wide range of voltage and temperature. To ensure the accuracy of distance range measurements over time, it is necessary to predict the DCR level under various operating conditions. The aforementioned simulation methodology is used to identify the potential sources of post-stress DCR by comparing simulation results to stress experiments that evaluate the principal stress factors, namely temperature, voltage and irradiance. Furthermore, a Monte-Carlo study has been conducted to examine the device-to-device variation along stress duration. For an accurate Hot-Carrier Degradation (HCD) kinetics model, it is essential to consider not only the carrier energy distribution function but also the distribution of Si−H bond dissociation energy distribution at the Si/SiO2 interface. The number of available hot carriers is estimated from the carrier current density according to the carrier energy distribution simulated by means of a full-band Monte-Carlo method. The impact-ionization dissociation probability is employed to model the defect creation process, which exhibits sub-linear time dependence due to the gradual exhaustion of defect precursors. Accurate distance ranging requires distinguishing the signal from ambient noise and the DCR floor, and ensuring the target’s accumulated photon signal dominates over other random noise sources. An analytical formula allows to estimate the maximum distance ranging using the maximum signal strength, ambient noise level, and confidence levels. The impact of DCR can be estimated by considering the target’s reflectance and the ambient light conditions. In a nutshell, this work makes use of a in-depth characterization and simulation methodology to predict DCR in SPAD devices along stress duration, thereby allowing the assessment of its impact on distance range measurements
4

Panglosse, Aymeric. "Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux". Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.

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Ce travail porte sur la modélisation pour la simulation et la prédiction desparamètres de performance des photodiodes à avalanche polarisée en mode Geiger en technologieCMOS, ou SPADs CMOS, pour Lidars spatiaux. Ce travail de thèse vise à développerune méthodologie basée sur : des modèles de la physique du semi-conducteur, des mesuresfournissant des informations sur le procédé technologique visé et des outils commerciaux desimulation. Ceci, dans le but de simuler les paramètres de performance des SPADs en serapprochant autant que possible de la réalité du procédé technologique afin d’améliorer lesprédictions. Des SPADs ont été conçues et caractérisées de manière à acquérir les paramètresde performances et les confronter aux résultats de simulation pour valider notre approche.De plus, la conception des SPADs s’est faite en regard des spécifications Lidar du CNESet d’Airbus Defence and Space en vue d’obtenir des structures permettant d’améliorer nosconnaissances en matière de : compréhension des mécanismes physiques, conception et méthodede caractérisation des SPADs CMOS. Ceci, dans l’intention d’étudier la possibilitéd’intégrer ces détecteurs dans leurs futurs systèmes Lidars spatiaux
This work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
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Rumbley, Sarah (Sarah E. ). "Photon-efficient computational imaging with single-photon avalanche diode (SPAD) arrays". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/106005.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 77-78).
Single-photon avalanche diodes (SPADs) are highly sensitive photodetectors that enable LIDAR imaging at extremely low photon flux levels. While conventional image formation methods require hundreds or thousands of photon detections per pixel to suppress noise, a recent computational approach achieves comparable results when forming reflectivity and depth images from on the order of 1 photon detection per pixel. This method uses the statistics underlying photon detections, along with the assumption that depth and reflectivity are spatially correlated in natural scenes, to perform noise censoring and regularized maximum-likelihood estimation. We expand on this research by adapting the method for use with SPAD arrays, accounting for the spatial non-uniformity of imaging parameters and the effects of crosstalk. We develop statistical models that incorporate these non-idealities, and present a statistical method for censoring crosstalk detections. We show results that demonstrate the performance of our method on simulated data with a range of imaging parameters.
by Sarah Rumbley.
M. Eng.
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Neri, Lorenzo. "Time Resolved Single Photon Imaging Device with Single Photon Avalanche Diode". Thesis, Università degli Studi di Catania, 2011. http://hdl.handle.net/10761/183.

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We have studied a new optical sensor characterized by performances that will extend the capabilities of several new physical investigation techniques. Our imaging device is based on a two-dimensional array of Single Photon Avalanche Diode (SPAD), sensitive to the single photon with a subnanosecond timing precision. It is able to perform a continuous photon acquisition without the necessity to break to perform the readout process. Moreover it is not damageable by intense light sources. The proposed solution constitutes a step forward for all Time Correlated Single Photon Counting analysis, as Fluorescence Lifetime Imaging Microscopy, Dynamic Light Scattering, 3D Camera, Particle Imaging Velocimetry and Adaptive Optics. An electric characterization of the single SPAD has been carried out to perform multiple readout strategies, and an electric model has been used to perform the simulation of different two-dimensional electric array configurations. We have also deeply studied the source of the counting distortion of the single passive quenched SPAD and have been able to extend the dynamic range of four order of magnitude and to use the dead time saturation as a compression feature for data produced by our imaging sensor. The dead time compensation laws established in Literature have been extended over the steady state analysis to include the time dependent source and any type of dead time. The acquisition electronics, the sensor calibration and the imaging reconstruction algorithm have been performed on a working prototype. The device has been tested with many experimental setups, developed to evaluate the features and the limits of our technological solutions.
Abbiamo studiato un nuovo sensore ottico caratterizzato da prestazioni che estenderanno le funzionalita' di molte nuove tecniche di indagine fisica. Il nostro dispositivo si basa su una matrice bidimensionale di Single Photon Avalanche Diode (SPAD), in grado di fornire il tempo di arrivo di ogni singolo fotone con una precisione del decimo di nanosecondo. Il nostro apparato e' in grado di acquisire là ¢ arrivo dei fotoni con continuita', senza interruzioni dovute al processo di lettura, ed e' inoltre resistente a fonti di luce eccessiva che costituiscono una limitazione per i normali dispositivi a singolo fotone. La soluzione proposta costituisce un passo in avanti per tutte le analisi basate sulla correlazione temporale a singolo fotone, come la Fluorescence Lifetime Imaging Microscopy, Dynamic Light Scattering, 3D Camera, Particle Imaging Velocimetry e Adaptive Optics. Grazie allo studio delle caratteristiche elettriche del singolo SPAD e' stato possibile individuare varie strategie di lettura. Il modello elettrico sviluppato e' stato inoltre utilizzato per simulare diverse configurazioni elettriche della matrici bidimensionali di sensori. Abbiamo studiato le caratteristiche funzionali del singolo SPAD ponendo l'attenzione sui fenomeni che alterano la linearita' di ri-sposta, siamo stati cosi' in grado di estendere di quattro ordini di grandezza il suo intervallo di utilizzo, e di utilizzare la saturazione come una funzione di compressione dei dati prodotti dal sensore. Le equazioni presentate estendono la correzione degli effetti del tempo morto, gia' presenti in letteratura, dallà ¢ analisi del caso stazionario a quello delle sorgenti variabili nel tempo, e sono inoltre estendibili a qualunque configurazione di tempo morto. La produzione di un prototipo funzionante ha compreso inoltre la realizzazione dell'elettronica di acquisizione, dell'algoritmo di calibrazione del sensore e di ricostruzione delle immagini. Il dispositivo e' stato testato realizzando diversi esperimenti, che hanno permesso di valutare le caratteristiche e i limiti delle soluzioni tecnologiche adottate.
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Fisher, Edward Michael Dennis. "Parallel reconfigurable single photon avalanche diode array for optical communications". Thesis, University of Edinburgh, 2015. http://hdl.handle.net/1842/11690.

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There is a pressing need to develop alternative communications links due to a number of physical phenomena, limiting the bandwidth and energy efficiency of wire-based systems or economic factors such as cost, material-supply reliability and environmental costs. Networks have moved to optical connections to reduce costs, energy use and to supply high data rates. A primary concern is that current optical-detection devices require high optical power to achieve fast data rates with high signal quality. The energy required therefore, quickly becomes a problem. In this thesis, advances in single-photon avalanche diodes (SPADs) are utilised to reduce the amount of light needed and to reduce the overall energy budget. Current high performance receivers often use exotic materials, many of which have severe environmental impact and have cost, supply and political restrictions. These present a problem when it comes to integration; hence silicon technology is used, allowing small, mass-producible, low power receivers. A reconfigurable SPAD-based integrating receiver in standard 130nm imaging CMOS is presented for links with a readout bandwidth of 100MHz. A maximum count rate of 58G photon/s is observed, with a dynamic range of ≈ 79dB, a sensitivity of ≈ −31.7dBm at 100MHz and a BER of ≈ 1x10−9. We investigate the properties of the receiver for optical communications in the visible spectrum, using its added functionality and reconfigurability to experimentally explore non-ideal influences. The all-digital 32x32 SPAD array, achieves a minimum dead time of 5.9ns, and a median dark count rate (DCR) of 2.5kHz per SPAD. High noise devices can be weighted or removed to optimise the SNR. The power requirements, transient response and received data are explored and limiting factors similar to those of photodiode receivers are observed. The thesis concludes that data can be captured well with such a device but more electrical energy is needed at the receiver due to its fundamental operation. Overall, optical power can be reduced, allowing significant savings in either transmitter power or the transmission length, along with the advantages of an integrated digital chip.
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Webster, Eric Alexander Garner. "Single-Photon Avalanche Diode theory, simulation, and high performance CMOS integration". Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/17987.

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This thesis explores Single-Photon Avalanche Diodes (SPADs), which are solid-state devices for photon timing and counting, and concentrates on SPADs integrated in nano-scale CMOS. The thesis focuses on: the search for new theory regarding Geiger-mode operation; proving the utility of calibrated Technology Computer- Aided Design (TCAD) tools for accurately simulating SPADs for the first time; the investigation of how manufacture influences device operation; and the integration of high performance SPADs into CMOS which rival discrete devices. The accepted theories of SPAD operation are revisited and it is discovered that previously neglected minority carriers have many significant roles such as determining: after-pulsing, Dark Count Rate (DCR), bipolar “SPAD latch-up,” nonequilibrium DCR, and “quenching”. The “quenching” process is revisited and it is concluded that it is the “probability time” of ≈100-200ps, and not the previously thought latching current that is important. SPADs are also found to have transient negative differential resistance. The new theories of SPADs are also supported by steady-state 1D, 2D and 3D TCAD simulations as well as novel transient simulations and videos. It is demonstrated as possible to simulate DCR, Photon Detection Efficiency (PDE), guard ring performance, breakdown voltage, breakdown voltage variation, “quenching,” and transient operation of SPADs with great accuracy. The manufacture of SPADs is studied focusing on the operation and optimisation of guard rings and it is found that ion implantation induced asymmetry from the tilt and rotation/twist is critical. Where symmetric, guard rings fail first along the <100> directions due to enhanced mobility. Process integration rules are outlined for obtaining high performance SPADs in CMOS while maintaining compatibility with transistors. The minimisation of tunnelling with lightly-doped junctions and the reduction of ion implantation induced defects by additional annealing are found essential for achieving low DCR. The thesis demonstrates that it is possible to realise high performance SPADs in CMOS through the innovation of a “Deep SPAD” which achieves record PDE of ≈72% at 560nm with >40% PDE from 410-760nm, combined with 18Hz DCR, <60ps FWHM timing resolution, and <4% after-pulsing which is demonstrated to have potential for significant further improvement. The findings suggest that CMOS SPAD-based micro-systems could outperform existing photon timing and counting solutions in the future.
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Chitnis, Danial. "Single photon avalanche diodes for optical communications". Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:5fd582dd-8167-4fe4-88f8-871ba905ade1.

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In order to improve the sensitivity of an optical receiver, the gain and the collection area of the photo-detectors within the receiver should be increased. Detectors with internal gain such as avalanche photodiodes (APD) are usually used to increase the sensitivity of the receiver. One problem with APDs is the sensitivity of their gain to their bias voltage, which makes them challenging to be fabricated in a standard CMOS process due to variations in their gain. However, when an APD is biased over its breakdown voltage, it is sensitive to a single photon, hence, referred to as a single photon avalanche diodes (SPAD). The SPADs are photon-counting detectors, which are less sensitive to their bias voltage, and can be integrated with rest of the electronic circuitry that form an optical receiver. An avalanche diode requires dedicated circuits to be operated in the SPAD mode. These circuits make the diode insensitive to an incident photon for a duration that is known as deadtime. Unfortunately, The collection area of the PD, APD, and SPADs are limited to their capacitance. Hence, a large photo-detector leads to a larger capacitance, which reduces the bandwidth of the receiver. In this thesis, a photon counting optical receiver based on an array of SPADs is proposed which increases the collection area with a low output capacitance. The avalanche diode and peripheral circuits which operate and readout-out the SPAD array are fabricated in the commercially available UMC 0.18 μm CMOS process. Initially, the avalanche diode is tested and characterised. A high performance circuit is then designed and tested which is able to achieve short deadtimes up to 4 ns. Once the photon counting operation of the SPAD is verified, a numerical model is developed to investigate the influence of several factors, including the deadtime, on the performance of the photon-counting detector in a communication link. Based on the simulation results, which show the advantages of an array over a single detector, a prototype detector array of 64 asynchronous SPADs is designed and tested. This array uses a high-speed readout mechanism which is inspired by the current steering digital-to-analogue converters. Bit error ratio tests (BERT) verify the photon counting capability of the proposed detector, and a bit error rate of 1E-3 has been achieved at data rate of 100 Mbps. In addition, the array of SPAD is compatible with a front-end of conventional optical receiver which uses a photodiode as a photo detector.
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Devita, Marie. "Mesure et dangerosité des métaux nobles pour les photodétecteurs à avalanche à photon unique". Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAD029/document.

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Les métaux nobles (Au, Ag, Pt, Ir, Pd et Ru) sont utilisés en salle blanche pour la réalisation de dispositifs électroniques ou peuvent être apportés par les équipements de fabrication (composants d’alliage par exemple). Il a été montré qu’ils pouvaient impacter fortement les dispositifs. Il est alors nécessaire de procéder au contrôle des équipements pour diagnostiquer au plus tôt une contamination. Or, il n’existe pas de technique industrielle pour leur suivi et ce à des niveaux d’au moins 5.109 at.cm-2 - recommandation ITRS. Il se pose la question de la pertinence de ces recommandations en fonction des types de dispositifs (SPAD notamment). Dans un premier temps, les travaux ont consisté à développer une technique physico-chimique pour l’analyse des métaux nobles sur silicium par VPD-DC-ICPMS. Enfin, leur dangerosité vis-à-vis des équipements et des dispositifs a été évaluée d’après leur comportement en température et le DCR généré sur SPAD
Noble metals (Au, Ag, Pt, Ir, Pd and Ru) are used for the fabrication of microelectronics devices or can be brought by manufacturing tools (alloy components for example). It is well known that these impurities are detrimental to the efficiency of the devices. This implies a real and present need for control of their introduction in clean rooms to diagnose as soon as possible a contamination. Yet, there are no industrial technique for their follow-up at levels about 5.109 at.cm-2 - ITRS recommendations. The relevance of these recommendations according to the electronic device (SPAD in particular) could be questioned. At first, this study consisted in developing a physicochemical technique for the analysis of noble metals on Si wafers by VPD-DC-ICPMS. Then, their dangerousness towards tools and devices was established according to their behavior in temperature and the DCR generated on SPAD devices
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Capítulos de libros sobre el tema "Diode à avalanche à photon unique":

1

Davis, Lloyd M. y Li-Qiang Li. "Ultrasensitive Sub-Nanosecond Time-Gated Detection Using a Single Photon Avalanche Diode". En Applications of Photonic Technology, 483–88. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-9247-8_92.

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Niclass, Cristiano, Maximilian Sergio y Edoardo Charbon. "A Single Photon Avalanche Diode Array Fabricated in Deep-Submicron CMOS Technology". En Design, Automation, and Test in Europe, 401–13. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-6488-3_29.

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Chu, Tong, Guilan Feng, Tianqi Zhao y Chunlan Lin. "Research Progress of Single Photon Avalanche Diode with Low Dark Count Rate". En Lecture Notes in Electrical Engineering, 1–9. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4110-4_1.

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Zheng, Jiyuan, Shaoliang Yu, Jiamin Wu, Yuyan Wang, Chenchen Deng y Zhu Lin. "A Novel In-Sensor Computing Architecture Based on Single Photon Avalanche Diode and Dynamic Memristor". En Artificial Intelligence, 489–500. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-20503-3_39.

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Durini, Daniel, Uwe Paschen, Werner Brockherde y Bedrich J. Hosticka. "Silicon based single-photon avalanche diode technology for low-light and high-speed applications". En Photodetectors, 37–71. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-08-102795-0.00002-5.

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Durini, Daniel, Uwe Paschen, Alexander Schwinger y Andreas Spickermann. "Silicon based single-photon avalanche diode (SPAD) technology for low-light and high-speed applications". En Photodetectors, 345–71. Elsevier, 2016. http://dx.doi.org/10.1016/b978-1-78242-445-1.00011-7.

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Actas de conferencias sobre el tema "Diode à avalanche à photon unique":

1

Louis, Thomas A. "Investigation of Picosecond Time-Resolved Photoluminescence in Gallium Arsenide with 3-μm Spatial Resolution". En Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.hsmt39.

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A novel instrument has recently been developed for picosecond time-resolved photoluminescence (TRPL) investigation of GaAs with 3 μm spatial resolution : the Photoluminescence Lifetime Microscope Spectrometer (PLμS). The PLμS is based on time-correlated single photon counting (TCSPC) with a single photon avalanche diode (SPAD) detector. Sensitivity of the PLμS, especially in the near infrared wavelength region (800-1000nm), is several orders of magnitude better than for synchroscan streak cameras. A signal-to-noise ratio of better than 1000:1 is typically obtained from a GaAs sample region of 3 μm diameter at room temperature and at excess carrier densities (at peak excitation) as low as 1015cm-3. As a result of the very low optical power requirements, a pulsed diode laser can be used as the excitation source. All signals are conveniently handled via optical fiber, which makes the PLμS a unique instrument for routine assessment of semiconductor materials and devices in an industrial environment.
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Zappa, Franco, Simone Tisa, Sergio Cova, Piera Maccagnani, Domenico Bonaccini Calia, Giovanni Bonanno, Massimiliano Belluso, Roberto Saletti y Roberto Roncella. "Pushing technologies: single-photon avalanche diode arrays". En SPIE Astronomical Telescopes + Instrumentation. SPIE, 2004. http://dx.doi.org/10.1117/12.552940.

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Zang, Kai, Xun Ding, Xiao Jiang, Yijie Huo, Matthew Morea, Xiaochi Chen, Ching-Ying Lu et al. "Surface textured silicon single-photon avalanche diode". En CLEO: Science and Innovations. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_si.2017.sm3k.2.

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Huang, Dong, Rong-xia Zhu, Si-yang Liu, Wei-feng Sun, Jin Wu y De-jun Ma. "SPICE modeling for single photon avalanche diode". En ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, editado por Jun Ohta, Nanjian Wu y Binqiao Li. SPIE, 2013. http://dx.doi.org/10.1117/12.2032040.

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Han, Song, Jian Zhang y Jie Song. "SSK Modulation with Single Photon Avalanche Diode". En 2016 4th International Conference on Machinery, Materials and Information Technology Applications. Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/icmmita-16.2016.34.

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Niclass, Cristiano, Marek Gersbach, Robert Henderson, Lindsay Grant y Edoardo Charbon. "A 130-nm CMOS single-photon avalanche diode". En Optics East 2007, editado por Joachim Piprek y Jian J. Wang. SPIE, 2007. http://dx.doi.org/10.1117/12.728878.

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Rech, Ivan, Angelo Gulinatti, Franco Zappa, Massimo Ghioni y Sergio Cova. "High-performance silicon single-photon avalanche diode array". En SPIE Defense, Security, and Sensing, editado por Mark A. Itzler y Joe C. Campbell. SPIE, 2009. http://dx.doi.org/10.1117/12.818516.

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Scandiuzzo, M., D. Stoppa, A. Simoni, L. Pancheri y G. F. Dalla Betta. "CMOS SINGLE PHOTON AVALANCHE DIODE FOR IMAGING APPLICATIONS". En Proceedings of the 11th Italian Conference. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812793393_0046.

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Dhouib, Hatem, Amel Neifar, Abdessattar Bouzid y Mohamed Masmoudi. "Study of a Single-Photon Avalanche Diode Models". En 2020 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS). IEEE, 2020. http://dx.doi.org/10.1109/dts48731.2020.9196074.

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Rink, S., V. Quenette, J. R. Manouvrier, A. Juge, G. Gouget, D. Rideau, R. A. Bianchi et al. "A self-sustaining Single Photon Avalanche Diode Model". En ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). IEEE, 2022. http://dx.doi.org/10.1109/essderc55479.2022.9947120.

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