Artículos de revistas: "Dielectric thin layer"

1

Lee, Sangwoo, Joonbong Lee, Jaeyoung Yang y Taekjib Choi. "Study of Etch Stop Layer on Characteristics of Amorphous Aluminum Oxide Thin Film". ECS Meeting Abstracts MA2022-01, n.º 21 (7 de julio de 2022): 2433. http://dx.doi.org/10.1149/ma2022-01212433mtgabs.

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To protect the active layer, which are inter layer dielectrics (ILD) and metal lines, from being damaged by UV laser during the etching process, etch stop layers (ESL) are used in patterning process of the integrated circuits (ICs) fabrication in back end of line (BEOL). The ESL material should have a higher etch selectivity than the active layer. Therefore, it must have a low dielectric constant and high chemical resistance. Aluminum oxide compounds (AlOx, AlOC, AlON, etc.) are highly suitable for use as ESL due to the low dielectric constant between about 4 and 9, high etch selectivity, high density (2.5-3.8 g/cm3) and pattern transfer capability. We focused on lowering the dielectric permittivity and increasing the density by controlling the precursor/reactant pulsed time of atomic layer deposition (ALD).

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2

Gagarin, Alexander, Diana Tsyganova, Andrey Altynnikov, Andrey Komlev y Roman Platonov. "An Adaptation of the Split-Cylinder Resonator Method for Measuring the Microwave Properties of Thin Ferroelectric Films in a “Thin Film—Substrate” Structure". Sensors 24, n.º 3 (24 de enero de 2024): 755. http://dx.doi.org/10.3390/s24030755.

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The split-cylinder resonator method was adapted to measure the microwave properties (dielectric permittivity and loss tangent) of thin ferroelectric films on a dielectric substrate. The mathematical model for calculating the resonance frequency of the split-cylinder resonator was adjusted for the “ferroelectric film—substrate” structure. An approach for correcting the gap effect based on calibrating with a single-layer dielectric was introduced and used to study two-layer dielectrics. The prototype of a split-cylinder resonator designed to measure single-layer dielectric plates at a frequency of 10 GHz was presented. The resonator calibration was performed using dielectric PTFE samples and fused silica, and an example of the correction function was suggested. The measurement error was estimated, and recommendations on the acceptable parameter range for the material under investigation were provided. The method was demonstrated to measure the microwave properties of a ferroelectric film on a fused silica substrate.

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3

Shih-Chang Shei, Shih-Chang Shei y Yichu Wang Shih-Chang Shei. "以三氧化二鋁為閘極絕緣層之銦鎵鋅氧薄膜電晶體之研究". 理工研究國際期刊 13, n.º 1 (abril de 2023): 1–10. http://dx.doi.org/10.53106/222344892023041301001.

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In this study focuses on the dielectric layer materials of thin film transistors (TFTs). Gate oxide was deposited using a RF Magnetron Sputtering control system. The first studied the aluminium oxide (Al2O3) dielectric layer material deposited with different oxygen flow and annealed by the furnace tube. The study found that the properties of aluminium oxide (Al2O3) thin film transistors (TFTs) after furnace tube annealing reduced the interface trap density and the roughness of the thin film after annealing. The above dielectric layer is used to make thin film transistors (TFTs) with a bottom gate structure. The characteristics of thin film transistors (TFTs) are significantly improved by higher oxygen flow and additional thermal anneal. By analyzing the structure and electrical measurement of the thin film, the influence of the dielectric layer material on the thin film transistors (TFTs) is analyzed.

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4

Sun, Xiao Hua, Ping Feng, Jun Zou y Min Wu. "Dielectric Tunable Properties of Ba_0.6Sr_0.4TiO₃ Thin Films with and without LSCO Buffer Layer". Advanced Materials Research 97-101 (marzo de 2010): 504–9. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.504.

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Barium strontium titanate Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by pulsed laser deposition (PLD) technique on Pt/TiO2/SiO2/Si substrate with and without high (100) oriented LSCO buffer layer. Crystal structure and surface morphology of BST thin films with and without LSCO buffer layer were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the LSCO buffer layer was beneficial for BST films to decrease surface roughness, dielectric loss and to increase grain size, dielectric constant, tunability and figure of merit (FOM). The influence of LSCO buffer layer on the microstructure, dielectric and tunable properties of BST thin films were analyzed. At 1M Hz, the dielectric constants of BST films with and without LSCO buffer layer are 684 and 592, respectively. The tunability of BST thin film with LSCO buffer layer was about 65.48%, which was higher than that (about 41.84%) of BST thin film without LSCO buffer layer.

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5

Niu, Jia Qi, Zhen Kun Xie, Zhen Xing Yue y Wei Qiang Wang. "Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric". Key Engineering Materials 697 (julio de 2016): 227–30. http://dx.doi.org/10.4028/www.scientific.net/kem.697.227.

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In this paper, the dielectric and electrowetting properties of Pb (Zr0.4Ti0.6)O3 (PZT) ferroelectric thin film are studied as the dielectric layer in electrowetting-on-dielectric (EWOD) device. The PZT thin film is formed by spin-coating, pyrolysis and annealing. The characterization results show that PZT thin film can serve as the dielectric of EWOD with a high dielectric constant and a great electrowetting performance when used in silicon oil bath environment. To test the electrowetting effect, a EWOD device with 200nm thick PZT ferroelectric thin film dielectric layer is fabricated. The variation of contact angle between droplet and device surface achieved with DC voltage, AC voltage and AC frequency change of electrowetting on PZT are fully experimented. The EWOD device with PZT dielectric layer can manipulate water droplet at low driving voltages. This study shows the potential of using ferroelectric ceramic material as the dielectric layer in high-performance EWOD devices.

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6

Kovalchuk, N. S., A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia y D. V. Shestovski. "Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method". Doklady BGUIR 20, n.º 4 (29 de junio de 2022): 44–52. http://dx.doi.org/10.35596/1729-7648-2022-20-4-44-52.

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Researches of the electrophysical characteristics of gate dielectrics obtained by the rapid thermal processing (RTP) method by two-stage and three-stage processes have been carried out. Each photonic processing (stage) was carried out for 12 s at a constant power of halogen lamps and heating the wafers to a maximum temperature of 1250 °C. The first two stages of the process were carried out in an oxygen atmosphere, the third - in nitrogen or a forming gas. It was found that for dielectrics obtained by the process with final processing in a nitrogen atmosphere, the absolute value of the voltage of flat zones is 0.42 V less, than for insulators, formed by a two-stage process. This is the consequence of the elimination of a significant part of the defects, responsible for the presence of Coulomb centers in the dielectric layer. Carrying out photonic processing in anitrogen atmosphere at high temperatures of procedures for proceeding of the restructuring of the structure of the dielectric layer. For insulators obtained by a three-stage process with final processing in N2, an increase in dielectric strength and breakdown voltage by 1 V and 3.3 MV/cm, respectively, is observed in comparison with dielectrics, obtained by a two-stage process. An increase in dielectric strength indicates relaxation of elastic stresses of deformed bonds and compensation for dangling bonds both in the dielectric and at its interface with Si during high-temperature photonic treatment. Passivation by nitrogen atoms of deformations at the dielectric/semiconductor interface will also have a positive effect on the strength of the insulator.

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7

Bazarova, Sayana B., Ivan G. Simakov, Chingis Zh Gulgenov y Tumen Ch Ochirov. "Determination of the dielectric properties of water in a thin layer". Himičeskaâ fizika i mezoskopiâ 26, n.º 1 (2024): 85–94. http://dx.doi.org/10.62669/17270227.2024.1.8.

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A technique is proposed for determining the dielectric properties of water in a nanoscale layer at frequencies corresponding to orientation polarization. The method is based on the registration of the change in the velocity of elastic surface waves resulting from the interaction with a thin layer of a liquid. It was assumed that the dispersion of the dielectric permittivity of water in the thin layer is described by the Debye's equations of dielectric relaxation. In order to demonstrate the capabilities of the proposed method, the values of the real part of the dielectric permittivity of adsorbed water at various frequencies f (43.2; 64.8; 108; 129.6, 194.4, 302.4, 388.8 MHz) were experimentally determined at a fixed thickness of the adsorption layer h (2.2; 2.8; 3.7; 13 nm). The determination of the value of the imaginary part of the dielectric permittivity as well as the calculation of the time of dielectric relaxation, static, and high-frequency dielectric permittivities was enabled by the use of the experimental values and Debye's equations. A comparison was made between the dielectric properties of adsorbed water and those of water in the bulk liquid phase. The high-frequency dielectric permittivity of adsorbed water was found to be lower than that of water in the bulk liquid phase, while the static dielectric permittivity was significantly higher. The dielectric relaxation time of adsorbed water is dependent on the thickness of the adsorption layer and is significantly longer than that of water in the bulk liquid phase.

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8

Senior, Thomas B. A. y John L. Volakis. "Sheet simulation of a thin dielectric layer". Radio Science 22, n.º 7 (diciembre de 1987): 1261–72. http://dx.doi.org/10.1029/rs022i007p01261.

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9

Brosseau, C. "Breakdown of a thin dielectric liquid layer". IEEE Transactions on Electrical Insulation 27, n.º 6 (1992): 1217–21. http://dx.doi.org/10.1109/14.204875.

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10

Svetovoy, Vitaly B. "Casimir Forces between a Dielectric and Metal: Compensation of the Electrostatic Interaction". Physics 5, n.º 3 (25 de julio de 2023): 814–22. http://dx.doi.org/10.3390/physics5030051.

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The Casimir forces between metals or good conductors have been checked experimentally. Semiconductors and especially dielectrics have not been investigated because of the surface charges, which generate strong electrostatic forces. Here, it is proposed to study the Casimir interaction of a dielectric and metal using a thin dielectric layer deposited on an optically thick metallic substrate. If the thickness of the layer is a few tens of nanometers, the electrostatic force due to charging can be compensated for by applying an extra voltage between the metallic plates. On the other hand, the contribution of the dielectric layer to the Casimir force is sufficiently large to extract information about the interaction between the bulk dielectric and metal.

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11

Kim, Min-Jin, Cheol-Jun Kim y Bo-Soo Kang. "Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film". Nanomaterials 13, n.º 14 (24 de julio de 2023): 2146. http://dx.doi.org/10.3390/nano13142146.

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Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, which is composed of the hafnia and the dielectrics. The phenomena are known to be affected mainly by oxygen vacancies of hafnia. Dielectric layers, which are often metal oxides, are also prone to be affected by oxygen vacancies. To study the effect of the dielectric layer on the wake-up and the split-up phenomena, we fabricated ferroelectric thin-film capacitors with dielectric layers of various thicknesses and measured their field-cycling behaviors. We found that the movement of oxygen vacancies in the dielectric layer was predominantly affected by the polarization state of the ferroelectric layer. In addition, the mechanism of the field-cycling behavior in the bilayer is similar to that in ferroelectric thin films. Our results can be applied in ferroelectric applications that use dielectric layers.

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12

Xu, Haiyang, Xingwei Ding, Jie Qi, Xuyong Yang y Jianhua Zhang. "A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor". Coatings 11, n.º 8 (15 de agosto de 2021): 969. http://dx.doi.org/10.3390/coatings11080969.

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In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

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13

RATHEE, KANTA y B. P. MALIK. "STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW". International Journal of Modern Physics: Conference Series 22 (enero de 2013): 564–69. http://dx.doi.org/10.1142/s2010194513010672.

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Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

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14

Sharma, Yogesh, Elizabeth Skoropata, Binod Paudel, Kyeong Tae Kang, Dmitry Yarotski, T. Zac Ward y Aiping Chen. "Epitaxial Stabilization of Single-Crystal Multiferroic YCrO3 Thin Films". Nanomaterials 10, n.º 10 (21 de octubre de 2020): 2085. http://dx.doi.org/10.3390/nano10102085.

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We report on the growth of stoichiometric, single-crystal YCrO3 epitaxial thin films on (001) SrTiO3 substrates using pulsed laser deposition. X-ray diffraction and atomic force microscopy reveal that the films grew in a layer-by-layer fashion with excellent crystallinity and atomically smooth surfaces. Magnetization measurements demonstrate that the material is ferromagnetic below 144 K. The temperature dependence of dielectric permittivity shows a characteristic relaxor-ferroelectric behavior at TC = 375–408 K. A dielectric anomaly at the magnetic transition temperature indicates a close correlation between magnetic and electric order parameters in these multiferroic YCrO3 films. These findings provide guidance to synthesize rare-earth, chromite-based multifunctional heterostructures and build a foundation for future studies on the understanding of magnetoelectric effects in similar material systems.

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15

SEKHAR, M. CHANDRA. "STRUCTURAL AND DIELECTRIC PROPERTIES OF Ba0.5Sr0.5TiO3 THIN FILMS GROWN ON LAO WITH HOMO-EPITAXIAL LAYER FOR TUNABLE APPLICATIONS". International Journal of Modern Physics B 18, n.º 15 (20 de junio de 2004): 2153–68. http://dx.doi.org/10.1142/s0217979204025270.

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The epitaxial, single phase (100) Ba 0.5 Sr 0.5 TiO 3 (BST) films with thin interfacial layer of BST (x=0.4) were deposited on LAO (100) substrates using Pulse Laser Deposition (PLD). These films were characterized in terms of their phase formation and structural growth characteristics using X-ray diffraction and Atomic Force Microscopy respectively. The dielectric properties are strongly affected by the substrate type, post deposition annealing time, and temperature. In order to verify all these properties, thin interfacial-buffer layers of BST (10, 20, 50 nm) were introduced to relieve the stress induced between the film and the substrate. The variations of dielectric constant and ferroelectric properties of as deposited films are discussed in detail. The high tunability, low dielectric loss and low leakage current of these films make them attractive candidates for fabricating tunable dielectric devices. The observed dielectric properties of the BST-films are attributed to homo-epitaxial interfacial layer, which is responsible for the increase in the dielectric constant and tunability.

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16

Kim, Dae-Cheol y Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de marzo de 2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.

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We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).

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17

Gong, Hui Ling, Xiao Hui Wang, Shao Peng Zhang, Xin Ye Yang y Long Tu Li. "Microstructures and Highly Accelerated Lifetime Test of X5R Type BaTiO₃-Based Ni-MLCC with Ultra-Thin Active Layers". Key Engineering Materials 602-603 (marzo de 2014): 695–99. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.695.

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Microstructure control in thin-layer multilayer ceramic capacitors (MLCCs) is one of the challenges for increasing capacitive volumetric efficiency and high voltage dielectric properties. In this paper, the X5R-MLCCs with ultra-thin dielectric layers (~1.2 μm) owning uniform grain size distribution were prepared by wet casting process. The microstructures and dielectric properties of the MLCCs were investigated. The existence of core-shell structure was proved by transmission electron microscopy observation and energy dispersive spectroscopy analysis. The existence of core-shell structure makes the temperature coefficient of capacitance (TCC) performance meet X5R standard. Moreover, a highly accelerated lifetime test (HALT) result shows that MLCCs with ultra-thin layers under high electric field are more easily to fail with increasing test temperatures. And the results reveal that the activation energy is similar to the value reported for mid-dielectric constant dielectrics.

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18

Wang, Wei Qiang, Jia Qi Niu y Yan Su. "BaTiO₃/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems". Solid State Phenomena 281 (agosto de 2018): 616–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.616.

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We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting effect, the variation of droplet contact angle achieved with DC voltage, AC voltage and AC frequency change are fully experimented. The EWOD device with nanocomposite dielectric layer also manipulates water droplet at low driving voltages. This study shows the potential of using ferroelectric nanocomposite film as the dielectric layer in high-performance EWOD devices.

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19

Skettrup, Torben. "Three-layer approximation of dielectric thin film systems". Applied Optics 28, n.º 14 (15 de julio de 1989): 2860. http://dx.doi.org/10.1364/ao.28.002860.

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20

Rychetský, I., N. Novotná y M. Glogarová. "Dielectric response of ferroelectric liquid crystal thin layer". Le Journal de Physique IV 10, PR7 (mayo de 2000): Pr7–119—Pr7–122. http://dx.doi.org/10.1051/jp4:2000724.

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21

Lyly Nyl, Ismail, Mohamad Hafiz Mohd Wahid, Zulkefle Habibah, Sukreen Hana Herman y Mohamad Rusop Mahmood. "Dielectric Properties of PVDF-TrFE/PMMA: TiO₂ Multilayer Dielectric Thin Films". Advanced Materials Research 576 (octubre de 2012): 582–85. http://dx.doi.org/10.4028/www.scientific.net/amr.576.582.

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This paper reports on the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film. Two samples were fabricated on ITO substrates; one with PVDF-TrFE only and another PMMA:TiO2 on PVDF-TrFE on (PVDF-TrFE/PMMA:TiO2). Both samples were produced by spin coating method. Dielectric properties were characterized using impedance spectroscopic. Dielectric constant, k, capacitance and dielectric loss, tan δ values of PMMA:TiO2/PVDF-TrFE were measured in the frequency range 0 – 50 kHz. The result for dielectric loss did not show any significant different between the samples with and without nanocomposite PVDF-TrFE layer. However, the dielectric constant are affected when depositing a nanocomposite PVDF-TrFE layer on PMMA:TiO2. The dielectric constant is decreased by 0.3 from 7.9 to 7.6.

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22

Koo, Jae Bon, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang y Kyung Soo Suh. "Pentacene Organic Thin-Film Transistors with Dual-Gate Structure". Solid State Phenomena 124-126 (junio de 2007): 383–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.383.

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We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

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23

Ko, Jieun, Su Jeong Lee, Kyongjun Kim, EungKyu Lee, Keon-Hee Lim, Jae-Min Myoung, Jeeyoung Yoo y Youn Sang Kim. "A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors". Journal of Materials Chemistry C 3, n.º 17 (2015): 4239–43. http://dx.doi.org/10.1039/c5tc00067j.

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An ionic liquid–polymer (IL–PVP) dielectric layer with robust mechanical strength and flexibility was fabricated by a chemical interaction between the ionic liquid and polymer. This dielectric layer allowed operation of flexible thin film transistors with high performance.

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24

Jia, Dongdong, C. Shaffer, S. Pickering, A. Goonewardene y Xiao-Jun Wang. "Behavior of TiO2 Thin Film in a Nanocapacitor". Journal of Nanoscience and Nanotechnology 8, n.º 3 (1 de marzo de 2008): 1234–37. http://dx.doi.org/10.1166/jnn.2008.18175.

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Gold and platinum nanocapacitors have been fabricated using a magnetron sputtering technique. TiO2 is used as a dielectric material to separate the metal layers which act as the parallel plates for the capacitors. The thickness for metal films and TiO2 layer is 80 nm and 400 nm, respectively. Capacitance of the nanocapacitors has been measured and dielectric constant of TiO2 calculated. Both capacitance and dielectric constant are observed to have strong frequency dependence.

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25

Rao, Wei, Ding Guo Li y Hong Chun Yan. "Effects of Individual Layer Thickness on the Structure and Electrical Properties of Sol-Gel-Derived Ba_0.8Sr_0.2TiO₃ Thin Films". Advanced Materials Research 621 (diciembre de 2012): 23–26. http://dx.doi.org/10.4028/www.scientific.net/amr.621.23.

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Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol– gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was <20 nm.

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26

Na, Moonkyong, Hoyyul Park y Myeongsang Ahn. "Dielectric Properties of Polymer Thin Films for the Organic Gate Dielectric Layer". Molecular Crystals and Liquid Crystals 510, n.º 1 (14 de septiembre de 2009): 223/[1357]—231/[1365]. http://dx.doi.org/10.1080/15421400903066414.

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27

WESSELINOWA, J. M. y S. TRIMPER. "LAYER POLARIZATIONS AND DIELECTRIC SUSCEPTIBILITIES OF ANTIFERROELECTRIC THIN FILMS". Modern Physics Letters B 17, n.º 25 (30 de octubre de 2003): 1343–47. http://dx.doi.org/10.1142/s0217984903006359.

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The polarization and susceptibility of thin antiferroelectric films are presented using a Green's function technique within an Ising model in a transverse field. Both quantities vary with the numbers of layers. Whereas at low temperatures the suceptibilty of the surface layer increases stronger than that of the second layer, the polarization of the surface is smaller compared to the polarization of the second layer. Such behavior has no counterpart in ferroelectric thin films. The effect is attributed to inhomogeneous thermal fluctuations.

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28

Huang, Ting, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari y Junming Liu. "Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition". Semiconductor Science and Technology 37, n.º 2 (16 de diciembre de 2021): 025005. http://dx.doi.org/10.1088/1361-6641/ac3e05.

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Abstract In this work, we systematically investigated the carrier transport of hysteresis-free amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO2) x (Al2O3) y gate dielectrics with different composition and permittivity by atomic layer deposition. A dielectric surface morphology dominated interface scattering carrier transport mechanism is demonstrated, and the effect of the dielectric polarization and the interface states on the carrier mobility is discovered in TFT devices gated by high quality dielectrics with negligible charge trap effect. Accordingly, an a-IGZO TFT gated by (HfO2)0.5(Al2O3)0.5 dielectric with the smoothest surface exhibits the best performance in terms of a preferable field-effect mobility of 18.35 cm2 V−1 s−1, a small subthreshold swing of 0.105 V decade−1, a high on/off current ratio of 4.6 × 106, and excellent stability under positive bias stress.

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29

Chen, Siting, Yuzhi Li, Yilong Lin, Penghui He, Teng Long, Caihao Deng, Zhuo Chen et al. "Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance". Coatings 10, n.º 4 (24 de abril de 2020): 425. http://dx.doi.org/10.3390/coatings10040425.

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Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

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Bahrami, Amin, Jun Yang, Xingwei Ding, Panpan Zhao, Shiyang He, Sebastian Lehmann, Mikko Laitinen et al. "Low-Temperature Atomic Layer Deposition of High-K SbO _x for Thin Film Transistors". ECS Meeting Abstracts MA2023-02, n.º 29 (22 de diciembre de 2023): 1436. http://dx.doi.org/10.1149/ma2023-02291436mtgabs.

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SbO x thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbO x thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbO x dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbO x dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, I on/I off ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (N trap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbO x boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.

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31

Libera, Matthew y Martin Chen. "Multilayered Thin-Film Materials for Phase-Change Erasable Storage". MRS Bulletin 15, n.º 4 (abril de 1990): 40–45. http://dx.doi.org/10.1557/s0883769400059947.

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Phase-change erasable optical recording uses a focused laser beam as a heat source to reversibly switch a micron-sized area in a thin film between the amorphous and crystalline states. A bit of information is stored as an amorphous spot in a crystalline background, and the state of the bit is determined by the differing optical properties of the amorphous and crystalline phases. This concept was first demonstrated in 1971 and then, after about a decade of exploratory work, the field accelerated throughout the 1980s at several research laboratories. Currently the subject of number of reviews, the field of phase-change materials promises to broaden and intensify in the 1990s.The active layer, where the storage occurs, is typically a tellurium-based alloy with a variety of solute species. Early work studied the recording properties of single-layered films, but it has been clearly shown that multilayered films, where the active layer is sandwiched between two or more dielectric layers, have superior recording properties and resistance to irreversible damage caused by laser heating. The dielectric layers (typically SiO2, Si3N4, or ZnS) provide barriers to active-layer oxidation and contamination, help prevent the hole formation associated with ablative write-once storage methods, and act as crucibles and heat sinks which contain the molten spot and influence its cooling properties, respectively. A typical multilayer structure is shown in the cross-sectional transmission electron micrograph of Figure 1.

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32

Zhou, X. Y., Yun Zhou, G. Y. Wang, Y. Wang, Helen Lai Wah Chan, C. L. Choy y Guo Zhong Cao. "Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy". Advanced Materials Research 79-82 (agosto de 2009): 823–26. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.823.

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(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

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33

Said, R. A. y M. Hamid. "Scattering by a thin multicoated perfectly conducting spherical shell with a circular aperture". Canadian Journal of Physics 70, n.º 2-3 (1 de febrero de 1992): 164–72. http://dx.doi.org/10.1139/p92-022.

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An analytic solution is presented for the problem of an infinitely thin perfectly conducting spherical shell with a circular aperture of arbitrary angle cut into the shell, filled with a dielectric, and coated by different thicknesses of spherical dielectric layers. The fields in all regions are expanded in terms of spherical wave functions and the boundary conditions of the continuity of the tangential fields at the dielectric–dielectric and dielectric–free-space boundaries are applied to express the expansion coefficients of the first dielectric layer in terms of the scattering coefficients. To approximate the modal expansion coefficients, the least-square error method is applied to the equations resulting from matching the fields through the aperture. Different numerical results for the simple case of a single coating layer are obtained in the form of amplitude patterns for the aperture and scattered fields versus angle as well as the backward- and forward-scattering cross sections for different loadings as functions of cavity size.

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34

Khound, Sagarika, Jayanta K. Sarmah y Ranjit Sarma. "Hybrid La₂O₃-cPVP Dielectric for Organic Thin Film Transistor Applications". ECS Journal of Solid State Science and Technology 11, n.º 1 (1 de enero de 2022): 013007. http://dx.doi.org/10.1149/2162-8777/ac4a7e.

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In this work, we have studied the electrical performance of cross-linked polyvinyl phenol (cPVP) modified lanthanum oxide (La2O3) bilayer dielectric film in pentacene thin film transistors (TFT). A simple spin-coating and room temperature operated cross-linking reaction of the hydroxyl moieties of PVP and the nitrogen groups of PMF were carried out to form the cross-linked PVP. The deposition of a thin 30 nm cPVP layer over the La2O3 layer provided a low leakage current (<10−7 A cm−2), causing a reduction in the interface trap density. Besides, the modified surface properties of the La2O3 layer were favorable for the growth of pentacene organic semiconductors. As a result, the current on-off ratio and the sub-threshold slope was improved from 104 and 1.0 V/decade to 105 and 0.67 V/decade. The La2O3∕cPVP pentacene TFT operated at −10 V also exhibited improvement in the field-effect mobility to 0.71 cm2 Vs−1 from 0.48 cm2 Vs−1 for the single-layer La2O3 (130 nm) device. Thus, our work demonstrates that the rare earth oxide La2O3 with cPVP is an excellent dielectric system in the context of emerging transistors with hybrid polymer gate dielectrics.

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35

Ugwu, Emmanuel Ifeanyi. "Perovskite Oxide Material Based Thin Films Prospect and Applicability". Nanomedicine & Nanotechnology Open Access 8, n.º 3 (2023): 1. http://dx.doi.org/10.23880/nnoa-16000240.

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In this current dispensation and quest for material thin film that exhibits ranges of applications in various areas due to its wide spectrum of attractive properties such ferroelectricity, piezoelectricity, ferromagnetism dielectric, magnotoresistance, multiferroic with high efficiency in solar energy conversion couple with the fact that some are good for passivation of layer of metals and then invariably minimizes metal corrosion

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36

Soum, Veasna, Yunpyo Kim, Sooyong Park, Mary Chuong, Soo Ryu, Sang Lee, Georgi Tanev, Jan Madsen, Oh-Sun Kwon y Kwanwoo Shin. "Affordable Fabrication of Conductive Electrodes and Dielectric Films for a Paper-based Digital Microfluidic Chip". Micromachines 10, n.º 2 (7 de febrero de 2019): 109. http://dx.doi.org/10.3390/mi10020109.

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In order to fabricate a digital microfluidic (DMF) chip, which requires a patterned array of electrodes coated with a dielectric film, we explored two simple methods: Ballpoint pen printing to generate the electrodes, and wrapping of a dielectric plastic film to coat the electrodes. For precise and programmable printing of the patterned electrodes, we used a digital plotter with a ballpoint pen filled with a silver nanoparticle (AgNP) ink. Instead of using conventional material deposition methods, such as chemical vapor deposition, printing, and spin coating, for fabricating the thin dielectric layer, we used a simple method in which we prepared a thin dielectric layer using pre-made linear, low-density polyethylene (LLDPE) plastic (17-μm thick) by simple wrapping. We then sealed it tightly with thin silicone oil layers so that it could be used as a DMF chip. Such a treated dielectric layer showed good electrowetting performance for a sessile drop without contact angle hysteresis under an applied voltage of less than 170 V. By using this straightforward fabrication method, we quickly and affordably fabricated a paper-based DMF chip and demonstrated the digital electrofluidic actuation and manipulation of drops.

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37

Li, Yang, Biao Xu, Song Xia y Peng Shi. "Microwave dielectric properties and optical transmittance of SrTiO3/ZnTiO3 heterolayer thin films fabricated by sol–gel processing". Journal of Advanced Dielectrics 10, n.º 06 (12 de noviembre de 2020): 2050027. http://dx.doi.org/10.1142/s2010135x20500277.

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SrTiO3/ZnTiO3 heterolayered thin films were fabricated by spin coating Sr–Ti and Zn–Ti sol–gel precursors on fused silica substrate. The SrTiO3 and ZnTiO3 were coated alternatively to form ABAB heterolayered thin films. The thickness of individual layers was tailored by controlling the coating layers. The structure characterization of the thin films showed independent structure of each layer while the microwave dielectric properties and optical band gaps can be tuned by changing the layer configuration. The effects of the layer configuration on the dielectric and optical properties were studied.

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38

Ihlemann, J., J. Békési, J. H. Klein-Wiele y P. Simon. "Processing of Dielectric Optical Coatings by Nanosecond and Femtosecond UV Laser Ablation". Laser Chemistry 2008 (16 de octubre de 2008): 1–6. http://dx.doi.org/10.1155/2008/623872.

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Microprocessing of dielectric optical coatings by UV laser ablation is demonstrated. Excimer laser ablation at deep UV wavelengths (248 nm, 193 nm) is used for the patterning of thin oxide films or layer stacks. The layer removal over extended areas as well as sub-μm-structuring is possible. The ablation of SiO2, Al2O3, HfO2, and Ta2O5 layers and layer systems has been investigated. Due to their optical, chemical, and thermal stability, these inorganic film materials are well suited for optical applications, even if UV-transparency is required. Transparent patterned films of SiO2 are produced by patterning a UV-absorbing precursor SiOx suboxide layer and oxidizing it afterwards to SiO2. In contrast to laser ablation of bulk material, in the case of thin films, the layer-layer or layer-substrate boundaries act as predetermined end points, so that precise depth control and a very smooth surface can be achieved. For large area ablation, nanosecond lasers are well suited; for patterning with submicron resolution, femtosecond excimer lasers are applied. Thus the fabrication of optical elements like dielectric masks, pixelated diffractive elements, and gratings can be accomplished.

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39

Dam, V. A. T., M. A. Blauw, S. H. Brongersma y R. van Schaijk. "Gas Sensing with Atomic Layer Deposited Dielectric Thin Film". Key Engineering Materials 605 (abril de 2014): 71–74. http://dx.doi.org/10.4028/www.scientific.net/kem.605.71.

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A metal-insulator-semiconductor (MIS) capacitor with La2O3 dielectric is proposedin this work as a sensor for measuring CO2 in air. In this device, a 10 nm thick La2O3 dielectriclayer, which serves as a CO2 sensitive material, was atomic-layer-deposited (ALD) on p-typesilicon. Change in the at band voltage (VFB) of the MIS capacitor due to the reactionbetween CO2 and oxide layer and its interfaces, is used as the gas sensitive parameter of thesensor. The deposition temperature for the La2O3 layer has been optimized for maximizingCO2 sensitivity. The process ow including post annealing (rapid thermal annealing) has beenoptimized to allow further possibility to integrate the sensor with CMOS read-out circuitries. The sensor shows a sensitivity of 84 mV per decade to CO2 in air in a concentration rangefrom 300-5000 ppm at ambient temperature with a response time (t90) of 34 minutes.

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40

Choi, Seungbeom, Kyung-Tae Kim, Sung Park y Yong-Hoon Kim. "High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric". Materials 12, n.º 6 (13 de marzo de 2019): 852. http://dx.doi.org/10.3390/ma12060852.

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In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

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41

Reinheimer, Timo, Tim P. Mach, Kevin Häuser, Michael J. Hoffmann y Joachim R. Binder. "Dielectric Behavior of Thin Polymerized Composite Layers Fabricated by Inkjet-Printing". Nanomaterials 13, n.º 3 (21 de enero de 2023): 441. http://dx.doi.org/10.3390/nano13030441.

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A detailed study of the dielectric behavior of printed capacitors is given, in which the dielectric consists of a thin (<1 µm) ceramic/polymer composite layer with high permittivities of εr 20–69. The used ink contains surface-modified Ba0.6Sr0.4TiO3 (BST), a polymeric crosslinking agent and a thermal initiator, which allows the immediate polymerization of the ink during printing, leading to homogenous layers. To validate the results of the calculated permittivities, different layer thicknesses of the dielectric are printed and the capacitances, as well as the loss factors, are measured. Afterwards, the exact layer thicknesses are determined with cross sectional SEM images of ion-etched samples. Then, the permittivities are calculated with the known effective area of the capacitors. Furthermore, the ink composition is varied to obtain different ceramic/polymer ratios and thus different permittivities. The packing density of all composites is analyzed via SEM to show possible pores and validate the target ratio, respectively. The correlation between the chosen ratio and the measured permittivity is discussed using models from the literature. In addition, the leakage current of some capacitors is measured and discussed. For that, the dielectric was printed on different bottom electrodes as the nature of the electrode was found to be crucial for the performance.

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42

Zhu, Jun, Jun Luo, Qing Meng Zhang, Qun Tang y Jun Du. "Gold Thin Film as Transition Layer in Electrode Design of Na₂O−PbO−Nb₂O₅−SiO₂ Glass-Ceramic Capacitors". Materials Science Forum 687 (junio de 2011): 457–62. http://dx.doi.org/10.4028/www.scientific.net/msf.687.457.

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The electrical properties and microstructure of Na2O−PbO−Nb2O5−SiO2 glass-ceramic capacitors with pre-sputtered gold film as the transition layer in electrode design were investigated. SEM observation and EDS analysis showed that the presence of gold transition layer would eliminate enormously the Ag diffusion into the dielectric layer, resulting in a smooth and dense interface contact with less porous defects near the electrode/dielectric layer region. The electrical property results indicated that the leakage current and dielectric loss had decreased by about an order of magnitude and 20%, respectively. These results were explained by the weakened diffusion of silver into dielectric layer due to the presence of gold transition layer in between the silver paste/dielectric interface.

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43

Zhang, Nana, Di Wang, Jie Wang, Hong Fang, Bin He, Jinrui Guo, Yue Han et al. "Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method". Coatings 11, n.º 12 (3 de diciembre de 2021): 1491. http://dx.doi.org/10.3390/coatings11121491.

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The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.

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44

Chen, Chao Nan, Jung Jie Huang, Gwo Mei Wu y How Wen Chien. "Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication". Applied Mechanics and Materials 284-287 (enero de 2013): 225–29. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.225.

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Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.

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45

CUI, LIAN, HAIYING CUI, CHUNMEI WU, GUIHUA YANG, ZELONG HE, YULING WANG y JIXIN CHE. "DYNAMIC PROPERTIES OF DIELECTRIC SUSCEPTIBILITY IN FERROELECTRIC THIN FILMS". Surface Review and Letters 23, n.º 03 (3 de mayo de 2016): 1650010. http://dx.doi.org/10.1142/s0218625x16500104.

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In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

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46

Chou, Chun-Yi, Teng-Jan Chang, Chin-I. Wang, Chun-Yuan Wang, Yu-Tung Yin, Tsai-Fu Chung, Jer-Ren Yang, Hsin-Chih Lin y Miin-Jang Chen. "Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing". Journal of Materials Chemistry C 8, n.º 37 (2020): 13025–32. http://dx.doi.org/10.1039/d0tc02346a.

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47

Vucheva, Yordanka Dilyanova, Georgi Dobrev Kolev, Mariya Petrova Aleksandrova y Krassimir Hristov Denishev. "Investigation of MEMS Piezoelectric Transformer with PVDF Thin Layer". Materials Science Forum 856 (mayo de 2016): 356–61. http://dx.doi.org/10.4028/www.scientific.net/msf.856.356.

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This paper presents the results of experimental work on thin piezoelectric polyvinylidene fluoride (PVDF) film, used as active layer in piezoelectric transformer. PVDF film was deposited by spray deposition technique on flexible polyethylene terephthalate (PET) substrate and its thickness was measured to be 2 μm. Aluminum (Al) bottom and top contacts were deposited by vacuum thermal evaporation. The transfer function of the transformer was measured at different frequencies in the range 50 Hz – 4 MHz. It was observed that at input frequency of 1 MHz, the transfer function started to decrease, which supposed low-frequency AC/AC transformer. Dielectric losses, which characterize piezoelectric devices’ quality, were less that 0.09 in the whole frequency range. This is proof for the efficient energy conversion and stable operation of the microstructure. The work shows that the PVDF transformer performance is comparable to the existing piezoceramic based transformers, which however suffer of high dielectric losses, signal distortions and relatively low boundary frequency.

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48

Park, Chul Ho y Young Gook Son. "Electrical Properties of (Ba,Sr)TiO₃ Thin Films with Self-Seed Layer Deposited by R.F. Magnetron Sputtering". Materials Science Forum 510-511 (marzo de 2006): 1038–41. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.1038.

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Barium strontium titanate (Ba0.66Sr0.34TiO3) thin films and seed-layers were deposited on the Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method. Effects of the substrate temperature on electrical properties of BST thin films were studied. The effect of seed-layer was also studied. From the XRD results, we could confirm that the seeding layer of BST thin film plays a key role in lowering the crystallization temperature of BST thin films. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

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49

Rogers, Bridget R., Zhe Song, Robert D. Geil y Robert A. Weller. "Optimization of UHV-CVD Thin Films for Gate Dielectric Applications". Advances in Science and Technology 45 (octubre de 2006): 1351–54. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1351.

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In-situ and ex-situ spectroscopic ellipsometry (SE), atomic force microscopy (AFM), transmission electron microscopy (TEM), and time of flight medium energy backscattering (ToF MEBS), are used to investigate the properties of 30 and 60 Å ZrO2 films deposited at different temperatures on hydrogen terminated silicon (H-Si) and native silicon oxide surfaces. Results show that the initial-stage deposition of ZrO2 on H-Si and native silicon oxide surfaces are different. A 3-dimesional (3D) type nucleation process of ZrO2 on H-Si leads to high surface roughness films, while layer-by-layer deposition on native silicon oxide surfaces leads to smooth, uniform ZrO2 films. An interfacial layer, between the substrate and the metal oxide, is formed through two independent mechanisms: reaction between the starting surfaces and ZTB or its decomposition intermediates, and diffusion of reactive oxidants through the forming ZrO2 interfacial stack layer to react with the substrate.

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50

Jafari, A. y A. Rahmat. "Band structure of one-dimensional photonic crystal with graphene layers using the Fresnel coefficients method". International Journal of Modern Physics B 32, n.º 11 (16 de abril de 2018): 1850132. http://dx.doi.org/10.1142/s0217979218501321.

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In this paper, we have calculated the band structure of an instance of one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics via the Fresnel coefficients method. Then, we supposed the addition of a thin layer of graphene to each dielectric layer and the given photonic crystal (PC) composed of dielectric–graphene composites. The effects of graphene layers on the PC band structure were evaluated. We found out that according to the effective medium theory unlike the TE polarization, the electric permittivity of the dielectric layers changed at TM polarization. As such, the band structure of PC for TM polarization changed, too. Moreover, instead of bandgap related to “zero averaged refractive index” an approximately omnidirectional bandgap appeared and a related bandgap to “[Formula: see text] = 0” disappeared. In addition, a new angular gap branch appeared at a new frequency at TM polarization in which the width of gap increased as the angle increased.

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