Tesis sobre el tema "Détecteur à semi-conducteur"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte los 20 mejores tesis para su investigación sobre el tema "Détecteur à semi-conducteur".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Explore tesis sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.
Imbert, Laetitia. "Analyse et modélisation des performances d'un nouveau type de détecteur en médecine nucléaire : du détecteur Anger au détecteur Semi-conducteur". Phd thesis, Université de Lorraine, 2012. http://tel.archives-ouvertes.fr/tel-00763934.
Imbert, Laëtitia. "Analyse et modélisation des performances d'un nouveau type de détecteur en médecine nucléaire : du détecteur Anger au détecteur semi-conducteur". Thesis, Université de Lorraine, 2012. http://www.theses.fr/2012LORR0279/document.
Myocardial single-photon emission computed tomography (SPECT) is considered as the gold standard for the diagnosis of coronary artery disease. Developed in the 1980s with rotating Anger gamma-cameras, this technique could be dramatically enhanced by new imaging systems working with semi-conductor detectors. Two semiconductor cameras, dedicated to nuclear cardiology and equipped with Cadmium Zinc Telluride detectors, have been recently commercialized: the Discovery NM- 530c (General Electric) and the DSPECT (Spectrum Dynamics). The performances of these CZT cameras were compared: 1) by a comprehensive analysis of phantom and human SPECT images considered as normal and 2) with the parameters commonly recommended for SPECT recording and reconstruction. The results show the superiority of the CZT cameras in terms of detection sensitivity, spatial resolution and contrast-to-noise ratio, compared to conventional Anger cameras. These properties might lead to dramatically reduce acquisition times and/or the injected activities. However, the limits of these new CZT cameras, as well as the mechanism of certain artefacts, remain poorly known. That?s why we developed, with the GATE Monte Carlo simulation plateform, a specific simulator of the DSPECT camera. We validated this simulator by comparing actually recorded data with simulated data. This simulator may yet be used to optimize the recorded and reconstruction processes, especially for complex protocols such as simultaneous dual-radionuclide acquisition and kinetics first-pass studies
Imbert, Laëtitia. "Analyse et modélisation des performances d'un nouveau type de détecteur en médecine nucléaire : du détecteur Anger au détecteur semi-conducteur". Electronic Thesis or Diss., Université de Lorraine, 2012. http://www.theses.fr/2012LORR0279.
Myocardial single-photon emission computed tomography (SPECT) is considered as the gold standard for the diagnosis of coronary artery disease. Developed in the 1980s with rotating Anger gamma-cameras, this technique could be dramatically enhanced by new imaging systems working with semi-conductor detectors. Two semiconductor cameras, dedicated to nuclear cardiology and equipped with Cadmium Zinc Telluride detectors, have been recently commercialized: the Discovery NM- 530c (General Electric) and the DSPECT (Spectrum Dynamics). The performances of these CZT cameras were compared: 1) by a comprehensive analysis of phantom and human SPECT images considered as normal and 2) with the parameters commonly recommended for SPECT recording and reconstruction. The results show the superiority of the CZT cameras in terms of detection sensitivity, spatial resolution and contrast-to-noise ratio, compared to conventional Anger cameras. These properties might lead to dramatically reduce acquisition times and/or the injected activities. However, the limits of these new CZT cameras, as well as the mechanism of certain artefacts, remain poorly known. That?s why we developed, with the GATE Monte Carlo simulation plateform, a specific simulator of the DSPECT camera. We validated this simulator by comparing actually recorded data with simulated data. This simulator may yet be used to optimize the recorded and reconstruction processes, especially for complex protocols such as simultaneous dual-radionuclide acquisition and kinetics first-pass studies
Million, Marc. "Conception d'un détecteur gamma haute énergie en semi-conducteur pour cartographie gamma". Paris 7, 1999. http://www.theses.fr/1999PA077171.
Chaput, Julien. "Étude d'un détecteur CMOS hybride à semi-conducteur et comptage de photons : application à l'imagerie X". Clermont-Ferrand 1, 2005. http://www.theses.fr/2005CLF1MM11.
Rougemaille, Nicolas. "Transmission d'électrons chauds, polarisés de spin, dans des jonctions Schottky métal ferromagnétique / semi-conducteur". Phd thesis, Ecole Polytechnique X, 2003. http://tel.archives-ouvertes.fr/tel-00188153.
Martin, Gilles. "Étude des produits de fusion chargés dans un tokamak". Paris 11, 1985. http://www.theses.fr/1985PA112154.
Much literature has been concerned with the planning component of robotic systems; this work has generally stressed generation of plans of action and considered the execution of these plans only as a secondary problem. This approach has practically restricted the planning problem to offline considerations or backstage intervention during the "action phase". Successfully applied in various fields, this approach has shown to have shortcomings for problems where planning and acting need to be interwoven to ensure correct behavior. This is the case in the application of decisional knowledge in the control of robotic systems. It therefore seems necessary to provide a suitable framework in which to express and use such knowledge. The subject of this thesis is the APSIS system, which is such a framework. APSIS is a production system and inference engine. Its characteristics are described and the uses explained through concrete examples. A user's manual may be found at the end of the thesis
Amor, Sarrah. "Étude des défauts dans les alliages de semi-conducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport : application aux photo-détecteurs U". Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0286/document.
Gallium nitride (GaN) and its ternary and quaternary alloys are attracting more and more interest in the scientific and industrial communities for their potential for use in high frequency electronic devices, for transistors with high electronic mobility, for UV photo-detection and new-generation solar cells. The outcome of these new components is still be seen to be limited in many areas, mainly due to the lack of control of electrical contacts implementation techniques. It is in this context that this thesis takes place.Although the main objective of this thesis deals with the study of the electrically active defects in high band gap B(AlGa)N semiconductor alloys and their role in the transport properties, the production of ohmic and Schottky contacts is an essential step in the realization of the devices under study. For the Ohmic contacts, we have deposited Ti/Al/Ti/Au (15/200/15/200) layers by thermal evaporation. Using the Transfer Length Method (TLM), we obtained specific contact resistances in the order of 3x10-4Wcm2. The Circular TLM has also confirmed this result. Besides, a theoretical modelling has been carried out to analyse the experimental measurements. Schottky diodes were then produced by depositing 150 nm platinum (Pt) metal contacts. An ideality factor of 1.3 and a barrier height of 0.76 eV were obtained. On the other hand, a study of transport mechanisms has been performed. It allowed us to demonstrate the existence of the direct tunnelling and the Thermionic Field Emission, in addition to the conventional thermionic effect. This result was underpinned by current and capacity measurements as a function of temperature. For photo detectors, we performed the same measurements of current and capacity in darkness and under illumination at suitable wavelengths. These measurements allowed understanding the internal gain that was observed on the samples. Furthermore, they show the effect of the thermally active mechanisms whose activation energies were determined by the Arrhenius technique. Using the Deep-Level Transient Spectroscopy (DLTS) technique followed up the study of the electrically active defects. This technique has recently been implemented in the laboratory. It allowed us to perform measurements under different conditions including various reverse bias, different frequencies, and different voltage pulse amplitudes and durations. One of the important results is the possibility of characterizing both majority and minority traps by simply changing the polarization conditions, as opposed to the usual procedures where an additional optical excitation is often necessary to increase the concentration of the minority carriers. In accordance with most of the encountered literature results, we found 6 electron traps all located below 0.9 eV of the conduction band, 3 hole traps in the 0.6-0.7 eV range above the valence band and one hole trap distributed at the interface. A rigorous procedure was developed and confirmed our results obtained by the standard Arrhenius technique
Papadopoulos, Georgios. "Development and characterization of novel electronics for the search of dark matter for DAMIC-M". Electronic Thesis or Diss., Sorbonne université, 2022. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2022SORUS238.pdf.
There is plenty of astrophysical and cosmological evidence for the existence of dark matter. The DAMIC-M experiment is devoted to the search for light dark matter and other hidden sector candidates, through their direct interaction with the electrons or the nucleus of silicon atoms in the bulk of scientific-grade Charge-Coupled Devices (CCDs). A kilogram-sized target mass will be installed at the Modane underground laboratory which offers an excellent low background environment for such a rare-event search. One of the key features of the DAMIC-M detectors is the skipper readout, which allows for multiple non-destructive pixel charge measurements, reaching a readout noise of a fraction of an electron. This exquisite ability in terms of readout resolution can be limited by the radioactive background and the noise introduced by the external electronics. To support this undertaking a new custom acquisition system is developed by the collaboration. This thesis describes the advancements in the three main modules I contributed to, that compose the new system. A control board provides the necessary signals to the CCD that allow the exposure of the device, the transfer of the pixel charge to a readout amplifier, and its conversion to an analog signal. A front-end amplifier improves the signal-to-noise ratio and preprocesses the CCD output signal, and an analog-to-digital converter performs the transition to the digital domain. The new electronics are not yet ready but there has been much progress towards a complete acquisition system. Tests with several individual pieces have been successfully tested with CCDs as well as a preliminary version of a pure DAMIC-M system
Galiano, Xavier. "Détecteurs thermiques non refroidis en YBaCuO semi-conducteur pour l'imagerie infrarouge et térahertz". Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066633/document.
In this manuscript, we are presenting the development of uncooled thermal sensors of the pyroelectric type, based on thin films of amorphous YBaCuO semiconductor, for applications in terahertz and infrared imaging. In a first part, we discuss the composition and optical properties of the YBaCuO semiconducting films. By X-ray photoelectron spectroscopy, we show the existence of a mixture of several phases and deduce the composition of the YBaCuO surface contamination layer; by ultraviolet photoelectron spectroscopy, we determine the YBaCuO work function. By optical spectroscopy, we then extract the refractive index and the absorption coefficient over a range of wavelengths spanning from ultraviolet to the near infrared. We also determine the values of optical gaps that we have correlated with the granular structure of the YBaCuO films at the micro and nanoscales. In a second part, we study the electrical transport behavior and optical response of pyroelectric detectors made from these amorphous YBaCuO thin films. The electrical contact between YBaCuO and the metal connections can be ohmic as well as rectifying. Resistivity measurements as a function of temperature show that the electric conduction is preferentially dominated by variable distance hopping of the carriers around the Fermi level. The response of the sensors in the near infrared - as a function of the modulation frequency of the source - reveal at room temperature a band-pass type behavior attributed to the pyroelectric effect, which could be interpreted by an analytical model. The device performance in terms of detectivity (1E9 cm.Hz^0.5/W) and time constant (a few microseconds) are at the state of the art
Laffosse, Elise. "Etude de la gravure assistée par plasma du semi-conducteur II-VI HgCdTe pour application à la fabrication de détecteurs infrarouge multispectraux". Toulouse, INSA, 2005. http://www.theses.fr/2005ISAT0018.
Guérin, Lucie. "Etude d'une nouvelle architecture de gamma caméra à base de semi-conducteurs CdZnTe /CdTe". Angers, 2007. https://tel.archives-ouvertes.fr/tel-01773265.
CdZnTe / CdTe semiconductor gamma ray detectors are good candidates to replace NaI(Tl) scintillation detectors for medical applications, notably for nuclear imaging. In addition to compactness, they present very good performances, in terms of energy resolution, detection efficiency and intrinsic spatial resolution. These detectors provide also an important additional information: the depth of interaction of the gamma ray into the detector. This context led LETI into developing and realizing new gamma camera architecture, based on CdZnTe / CdTe semiconductor, in order to benefit from these recent performances. During this work, we have proposed a new architecture, named HiSens (High Sensitivity), allowing to improve sensitivity (about factor 5) while preserving spatial resolution. This architecture associates CdZnTe detectors, providing depth of interaction information, with a new parallel square hole collimator geometry and uses an adapted image reconstruction method. We have evaluated HiSens architecture performances with simulation, after development of simulations software and an adapted method of iterative reconstruction, using photon depth of interaction information. A preliminary experimental validation is currently investigated at CEA-LETI in order to confirm simulations results
Heymes, Julian. "Depletion of CMOS pixel sensors : studies, characterization, and applications". Thesis, Strasbourg, 2018. http://www.theses.fr/2018STRAE010/document.
An architecture of CMOS pixel sensor allowing the depletion of the sensitive volume through frontside biasing is studied through the characterization in laboratory of a prototype. The charge collection performances confirm the depletion of a large part of the sensitive thickness. In addition, with a modest noise level, the sensor features an excellent energy resolution for photons below 20 keV at positive temperatures. These results demonstrate that such sensors are suited for soft X-ray spectroscopy and for charged particle tracking in highly radiative environment. A simplified analytical model and finite elements calculus are used to predict the depletion depth reached. An indirect measurement method to evaluate this depth is proposed. Measurements confirm predictions for a thin highly resistive epitaxial layer, which is fully depleted, and a 40micrometers thick bulk less resistive substrate, for which depletion reached 18 micrometers but which still offers correct detection over its full depth. Two sensor designs dedicated to X-ray imaging and in-brain neuroimaging on awake and freely moving rats are presented
Brionnet, Pierre. "Etude des états isomères des noyaux superlourds : cas des noyaux 257Db et 253 Lr". Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAE043/document.
The study of the heavy and superheavy nuclei mass region represents one of the biggest challenge for the modern nuclear physic regarding both experimental setups and complex analysis. Moreover, the study around the transfermia nuclei (Z = 100 to 106), through the spectroscopy experiments, allows us to bring new information on the nuclear matter and its properties. Therefore, my thesis experiment was focused on the study of the 257Db nuclei. The experiment was performed on the SHELS separator using the GABRIELA setup at the JINR of Dubna (Russia). This study allows us to highlight new information regarding this nucleus, through the delayed spectroscopy method and by using the 50TI(209Bi,2n)257Db fusion evaporation reaction as well as the very good performances of the GABRIELA setup (α, γ and electron detection). This study allows us also to establish a new level scheme as well as to confirm the decay one for the 257Db and 253Lr nuclei. The second part of my thesis work was centered on the development and the characterization of Silicon detectors for the S3/SIRIUS projet (SPRIAL2, GANIL). The characterization allows us to confirm the good performances of these detectors according to the specifications. Moreover, it also highlights internal phenomena at low energy within the detector. Thus, the characterization as well as the interpretation of these phenomena will be presented
Berenguier, Baptiste. "Mesures des propriétés opto-électriques du carbure de silicium par déphasage micro-onde et sensibilité spectrale". Electronic Thesis or Diss., Aix-Marseille, 2015. http://www.theses.fr/2015AIXM4375.
Silicon carbide is a large bandgap semiconductor presenting outstanding properties in terms of temperature, radiations and chemical hardness. In particular it could allow the fabrication of ultra-violet detectors, able to work in harsh environments such as for space aplications. The 3C polytype , with it’s intermediate bandgap, could also be used in the photovoltaic field. The present work aims to study both the material and the application aspects of silicon carbide. A study of the spectral response of both pn and Schottky photodiodes with respect to the temperature and irradiation is presented. A new type of 3C-SiC/Si heterojunction solar cell is studied. Finally, a minority carrier lifetime measurement system is realised ant the results presented
Berenguier, Baptiste. "Mesures des propriétés opto-électriques du carbure de silicium par déphasage micro-onde et sensibilité spectrale". Thesis, Aix-Marseille, 2015. http://www.theses.fr/2015AIXM4375/document.
Silicon carbide is a large bandgap semiconductor presenting outstanding properties in terms of temperature, radiations and chemical hardness. In particular it could allow the fabrication of ultra-violet detectors, able to work in harsh environments such as for space aplications. The 3C polytype , with it’s intermediate bandgap, could also be used in the photovoltaic field. The present work aims to study both the material and the application aspects of silicon carbide. A study of the spectral response of both pn and Schottky photodiodes with respect to the temperature and irradiation is presented. A new type of 3C-SiC/Si heterojunction solar cell is studied. Finally, a minority carrier lifetime measurement system is realised ant the results presented
Panza, Fabien. "Développement de la spectrométrie gamma in situ pour la cartographie de site". Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00975929.
Erades, Laurent. "Nanoparticules d'oxydes semi-conducteurs : synthèse, caractérisation et application à la détection sélective de gaz". Toulouse 3, 2003. http://www.theses.fr/2003TOU30031.
Panza, Fabien. "Développement de la spectrométrie gamma in situ pour la cartographie de site". Electronic Thesis or Diss., Strasbourg, 2012. http://www.theses.fr/2012STRAE043.
The high-resolution gamma spectrometry currently provides a powerful analytical tool for performing environmental measurements. In the context of radiological characterization of a site (natural or artificial radioactivity) and for the dismantling of nuclear installations, mapping of radionuclides is an important asset. The idea is to move a HPGe spectrometer to study the site and from nuclear and position data, to identify, to locate and to quantify the radionuclides present in the soil. The development of this tool follows an intercomparaison (ISIS 2007) where an intervention / crisis exercise showed the limits of current tools. The main part of this research project has focused on mapping of nuclear data. Knowledge of the parameters of an in situ spectrum helped to create a simulator modeling the response of a spectrometer moving over contaminated soil. The simulator itself helped to develop algorithms for mapping and to test them in extreme situations and not realizable. A large part of this research leads to the creation of a viable prototype providing real-time information concerning the identity and locality as possible radionuclides. The work performed on the deconvolution of data can make in post processing a map of the activity of radionuclide soil but also an indication of the depth distribution of the source. The prototype named OSCAR was tested on contaminated sites (Switzerland and Japan) and the results are in agreement with reference measurements
Benoit, Mathieu. "Modélisation de détecteurs à base de semiconducteurs pour la spectroscopie et l'imagerie des rayons-[y] ?" Thèse, 2008. http://hdl.handle.net/1866/8019.