Literatura académica sobre el tema "Chalcopyrite compounds"
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Artículos de revistas sobre el tema "Chalcopyrite compounds"
Kumari, Jyoti, Shalini Tomar, Sukhendra Sukhendra, Banwari Lal Choudharya, Upasana Rani y Ajay Singh Verma. "Fundamental Physical Properties of LiInS2 and LiInSe2 Chalcopyrite Structured Solids". 3, n.º 3 (28 de septiembre de 2021): 62–69. http://dx.doi.org/10.26565/2312-4334-2021-3-09.
Texto completoKhan, Karina, Kamal N. Sharma, Amit Soni y Jagrati Sahariya. "First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds". Physica Scripta 98, n.º 3 (15 de febrero de 2023): 035821. http://dx.doi.org/10.1088/1402-4896/acb8ee.
Texto completoDietrich, M., A. Burchard, D. Degering, M. Deicher, J. Kortus, R. Magerle, A. Möller, V. Samokhvalov, S. Unterricker y R. Vianden. "Quadrupole Interaction in Ternary Chalcopyrite Semiconductors: Experiments and Theory". Zeitschrift für Naturforschung A 55, n.º 1-2 (1 de febrero de 2000): 256–60. http://dx.doi.org/10.1515/zna-2000-1-245.
Texto completoYalikun, Alimujiang, Ming-Hsien Lee y Mamatrishat Mamat. "Theoretical investigation on the promotion of second harmonic generation from chalcopyrite family AIGaS2 to AIIGa2S4". RSC Advances 9, n.º 71 (2019): 41861–67. http://dx.doi.org/10.1039/c9ra09109b.
Texto completoBairamov, B. H., V. Yu Rud' y Yu V. Rud'. "Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2". MRS Bulletin 23, n.º 7 (julio de 1998): 41–44. http://dx.doi.org/10.1557/s0883769400029080.
Texto completoVijayalakshmi, D. y G. Kalpana. "First principle calculations on structural, electronic, and magnetic properties of CdMAs2 (M = Sc, Ti, V) chalcopyrites". Canadian Journal of Physics 95, n.º 11 (noviembre de 2017): 1031–36. http://dx.doi.org/10.1139/cjp-2016-0364.
Texto completoChandra, S., Anita Sinha y V. Kumar. "Electronic and elastic properties of AIIB2IIIC4VI defect-chalcopyrite semiconductors". International Journal of Modern Physics B 33, n.º 28 (10 de noviembre de 2019): 1950340. http://dx.doi.org/10.1142/s0217979219503405.
Texto completoValeri-Gil, M. L. y C. Rincón. "Thermal conductivity of ternary chalcopyrite compounds". Materials Letters 17, n.º 1-2 (julio de 1993): 59–62. http://dx.doi.org/10.1016/0167-577x(93)90148-q.
Texto completoGrechenkov, Jurij, Aleksejs Gopejenko, Dmitry Bocharov, Inta Isakoviča, Anatoli I. Popov, Mikhail G. Brik y Sergei Piskunov. "Ab Initio Modeling of CuGa1−xInxS2, CuGaS2(1−x)Se2x and Ag1−xCuxGaS2 Chalcopyrite Solid Solutions for Photovoltaic Applications". Energies 16, n.º 12 (20 de junio de 2023): 4823. http://dx.doi.org/10.3390/en16124823.
Texto completoAikawa, Kosei, Mayumi Ito, Atsuhiro Kusano, Ilhwan Park, Tatsuya Oki, Tatsuru Takahashi, Hisatoshi Furuya y Naoki Hiroyoshi. "Flotation of Seafloor Massive Sulfide Ores: Combination of Surface Cleaning and Deactivation of Lead-Activated Sphalerite to Improve the Separation Efficiency of Chalcopyrite and Sphalerite". Metals 11, n.º 2 (2 de febrero de 2021): 253. http://dx.doi.org/10.3390/met11020253.
Texto completoTesis sobre el tema "Chalcopyrite compounds"
Yoodee, Kajornyod. "Crystallographic and band structure properties of some I-III-VI2 chalcopyrite compounds and alloys". Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4670.
Texto completoHergert, Frank. "Chemical formation reactions for Cu(In,Ga)Se2 and other chalcopyrite compounds an in-situ x-ray diffraction study and crystallographic models /". [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=983606056.
Texto completoStephan, Christiane [Verfasser]. "Structural trends in off stoichiometric chalcopyrite type compound semiconductors / Christiane Stephan". Berlin : Freie Universität Berlin, 2011. http://d-nb.info/1025939549/34.
Texto completoKessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition". Paris 7, 1988. http://www.theses.fr/1988PA077189.
Texto completoTang, Li-Chuan y 唐立權. "Theoretical and experimental studies of second-order nonlinear optical properties for various polyhedron distortions in ternary halides and some chalcopyrite compounds". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/56630959983291752567.
Texto completo國立交通大學
光電工程系所
97
Microstructures, electronic structures, linear- and nonlinear-optical properties of the crystals with two main polyhedron categories are examined in this study by using both the first principles calculation and the experimental methods. The studied crystals include the rhombohedral ternary halides (ABX$_3$ (A=Cs, Rb, B=Ge, X=Cl, Br, I)), the wide-bandgap ternary nitrides($A^{II}B^{IV}N_2$ ($A^{II}=Be, Mg$, $B^{IV}=C, Si, Ge$)), and chalcopyrite AgGaS$_2$, AgGaSe$_2$, and AgGa(S$_x$Se$_{1-x}$)$_2$. \\ First, one of the most important parts, systematic studies based on first-principles calculations of second-order optical susceptibilities as well as the dielectric function for CsGeX$_3$ (X=Cl, Br, and I; CGX) are presented. The relation between structural properties and the optoelectronic responses are examined. The structural factors, $\Delta \alpha$, $d_{Ge}$, $d_X$ are proposed to describe the degree of distortion from an ideal perovskite structure. $\Delta \alpha$ and $d_{Ge}$ increase when the halide anions are changed from Cl to I; while halide anion displacement, $d_X$, decreases. The structural distortion effect on these rhombohedral CGX crystals is analyzed via the first-principles calculations. The dielectric function and the second harmonic generation (SHG) response coefficient also increase with increasing $\Delta \alpha$ and $d_{Ge}$. The direct bandgaps, $E_G$, of CsGeX$_3$ all occur at the $R$-point, $\Delta E_R$. The experimental bandgaps of CGX crystals become smaller, i.e. $E^{CGC}_G$(3.67eV)$>E^{CGB}_G$(2.32eV)$>E^{CGI}_G$(1.53eV), as the $\Delta \alpha$ and $d_{Ge}$ increase, i.e. $d^{CGC}_{Ge}
Hergert, Frank [Verfasser]. "Chemical formation reactions for Cu(In,Ga)Se2 and other chalcopyrite compounds : an in-situ X-ray diffraction study and crystallographic models / vorgelegt von Frank Hergert". 2007. http://d-nb.info/983606056/34.
Texto completoChen, Shih-Cin y 陳世欽. "Preparation and Characterization of Chalcopyrite I-III-VI Group Ternary Compound CuGaSe2 and CuInSe2 polycrystalline thin films by printing processes". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/fb5ps5.
Texto completo國立虎尾科技大學
材料科學與綠色能源工程研究所
101
In this experiment, we use non-vacuum process to prepare CuInSe2 and CuGaSe2 these two different materials as the absorber layers for photovoltaic devices. First of all, copper, indium, gallium, and selenium with different ratios were smelted into CuInSe2 and CuGaSe2 ternary alloys. The ink was prepared using ball milling and was printed onto a glass substrate to form a precursor layer by spin coating. Then, the samples were treated with rapid thermal annealing (RTA) process within a furnace, and the obtained film has a structure of chalcopyrite. Energy dispersive spectroscopy (EDS) and (ICP) measurements were used to detect the change of its composition, surface and cross-section morphologies were determined by scanning electron microscopy (SEM) images, the changes of the composition were measured by X-ray diffraction (XRD) spectra, and the band gap variation was obtained by UV-Vis spectra. From the experimental results, the thin film turns into a chalcopyrite structure after annealing, the composition of copper content increases with increasing heat treatment temperature, the half-height width of XRD spectra becomes narrower, and the crystal grains become larger. It is found that CuInSe2 thin film with chalcopyrite structure can be obtained by heating at 600oC, and CuGaSe2 has the best quality with the heat treatment temperature of 650oC. The bandgaps of CuInSe2 and CuGaSe2 after annealing were 1.04 and 1.73 eV, respectively.
Libros sobre el tema "Chalcopyrite compounds"
Rössler, U., ed. New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8.
Texto completoCapítulos de libros sobre el tema "Chalcopyrite compounds"
Solis-Marcial, O. J. y G. T. Lapidus. "Leaching of Chalcopyrite Concentrate with Organic Ligand Compounds". En T.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization, 605–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118364833.ch55.
Texto completoKistaiah, P., K. Satyanarayana Murthy y Leela Iyengar. "Correlation Between the Structural Parameters and the Thermal Conductivity of Chalcopyrite-Type Ternary Compounds". En Thermal Conductivity 18, 127–37. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4916-7_14.
Texto completoRössler, U. "AgGaS2: force constants". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_1.
Texto completoRössler, U. "AgInTe2: force constants". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 13. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_10.
Texto completoRössler, U. "ZnSe: Debye-Waller factor, temperature factor". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 226–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_100.
Texto completoRössler, U. "ZnSe: phonon dispersion curves, phonon spectra". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 228–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_101.
Texto completoRössler, U. "ZnSe: elastic constants, internal strain parameter". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 230–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_102.
Texto completoRössler, U. "ZnSe: bulk modulus, compressibility". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 233–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_103.
Texto completoRössler, U. "ZnSe: dielectric constant, effective charge". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 238–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_104.
Texto completoRössler, U. "ZnSe: phonon frequencies, Grüneisen parameters, anharmonic frequency shift and width". En New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 240–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_105.
Texto completoActas de conferencias sobre el tema "Chalcopyrite compounds"
Derollez, P., A. Laamyem, R. Fouret, B. Hennion y J. Gonzalez. "Phonons in chalcopyrite compounds". En Neutrons and numerical methods. AIP, 1999. http://dx.doi.org/10.1063/1.59491.
Texto completoMaeda, T., T. Takeichi y T. Wada. "Defect Formation Energies in Chalcopyrite-Type AgInSe2 and the Rerated Chalcopyrite Compounds by First Principles Calculations". En 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279486.
Texto completoZunger, Alex y Su-Huai Wei. "Electronic structure theory of chalcopyrite alloys, interfaces, and ordered vacancy compounds". En The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49433.
Texto completoWahnon, P., P. Palacios, K. Sanchez, I. Aguilera y J. Conesa. "AB-Initio Modeling of Intermediate Band Materials Based on Metal-Doped Chalcopyrite Compounds". En 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279347.
Texto completoVijayalakshmi, D. y G. Kalpana. "Half-metallic ferromagnetism in chalcopyrite type compounds ZnMX2 (M=Sc, V, Mn, Fe; X = P, As)". En NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4918010.
Texto completoSingh, Hardev, Mukhtiyar Singh, Manish K. Kashyap, S. K. Tripathi, Keya Dharamvir, Ranjan Kumar y G. S. S. Saini. "Ab-initio Study of Electronic Band Structures of CdBAs[sub 2] (B = Si, Ge and Sn) Chalcopyrite Compounds". En INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011). AIP, 2011. http://dx.doi.org/10.1063/1.3653663.
Texto completoSydykanov, Muratbek, Yerkin Bektay, Gaukhar Turysbekova, Adilkhan Baibatsha y Gurhan Yalcin. "APPLICATION OF BIOLEACHING OF COPPER FLOTATION TAILINGS". En 22nd SGEM International Multidisciplinary Scientific GeoConference 2022. STEF92 Technology, 2022. http://dx.doi.org/10.5593/sgem2022v/4.2/s18.03.
Texto completoExner, Ginka, Aleksandar Grigorov, Valeriy Badikov y Valentin Petrov. "Measurements of the Hardness and Young’s Modulus of the Nonlinear Optical Crystals BaGa4S7 and BaGa4Se7". En Frontiers in Optics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/fio.2022.jtu4a.8.
Texto completoExner, Ginka, Aleksandar Grigorov, Valeriy Badikov y Valentin Petrov. "Hardness and Young’s Modulus Measurements of the Nonlinear Optical Crystals BaGa2GeS6 and BaGa2GeSe6". En Advanced Solid State Lasers. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/assl.2022.jw3b.10.
Texto completoKocak, Belgin y Yasemin Oztekin Ciftci. "Analysis of the structural, electronic and optic properties of Ni doped MgSiP2 semiconductor chalcopyrite compound". En 9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9). AIP Publishing LLC, 2016. http://dx.doi.org/10.1063/1.4944245.
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