Artículos de revistas sobre el tema "CARRIER RELIABILITY"
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NASEH, SASAN y M. JAMAL DEEN. "RF CMOS RELIABILITY". International Journal of High Speed Electronics and Systems 11, n.º 04 (diciembre de 2001): 1249–95. http://dx.doi.org/10.1142/s0129156401001088.
Texto completoZHAO, Lijuan. "Reliability Design of Shearer's Planet Carrier". Journal of Mechanical Engineering 55, n.º 8 (2019): 192. http://dx.doi.org/10.3901/jme.2019.08.192.
Texto completoCheng, Junji y Xingbi Chen. "Hot-carrier reliability in OPTVLD-LDMOS". Journal of Semiconductors 33, n.º 6 (junio de 2012): 064003. http://dx.doi.org/10.1088/1674-4926/33/6/064003.
Texto completoJie Liao, Cher Ming Tan y Geert Spierings. "Hot-Carrier Reliability of Power SOI EDNMOS". IEEE Transactions on Power Electronics 25, n.º 7 (julio de 2010): 1685–91. http://dx.doi.org/10.1109/tpel.2010.2041255.
Texto completoSoares, C. Guedes y A. P. Teixeira. "Structural reliability of two bulk carrier designs". Marine Structures 13, n.º 2 (marzo de 2000): 107–28. http://dx.doi.org/10.1016/s0951-8339(00)00004-6.
Texto completoKoeppel, Gaudenz y Göran Andersson. "Reliability modeling of multi-carrier energy systems". Energy 34, n.º 3 (marzo de 2009): 235–44. http://dx.doi.org/10.1016/j.energy.2008.04.012.
Texto completoSugiharto, D. S., C. Y. Yang, Huy Le y J. E. Chung. "Beating the heat [CMOS hot-carrier reliability]". IEEE Circuits and Devices Magazine 14, n.º 5 (1998): 43–51. http://dx.doi.org/10.1109/101.721519.
Texto completoHwang, Hyunsang, Jack Lee, Pierre Fazan y Chuck Dennison. "Hot-carrier reliability characteristics of narrow-width MOSFETs". Solid-State Electronics 36, n.º 4 (abril de 1993): 665–66. http://dx.doi.org/10.1016/0038-1101(93)90284-w.
Texto completoAur, S. y Ping Yang. "IVB-6 hot-carrier reliability of trench transistor". IEEE Transactions on Electron Devices 34, n.º 11 (noviembre de 1987): 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.
Texto completoMinehane, S., S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson y B. Mason. "Direct parameter extraction for hot-carrier reliability simulation". Microelectronics Reliability 37, n.º 10-11 (octubre de 1997): 1437–40. http://dx.doi.org/10.1016/s0026-2714(97)00081-4.
Texto completoRafı́, J. M. y F. Campabadal. "Hot-carrier reliability in deep-submicrometer LATID NMOSFETs". Microelectronics Reliability 40, n.º 4-5 (abril de 2000): 743–46. http://dx.doi.org/10.1016/s0026-2714(99)00300-5.
Texto completoMustafa, Samah A. "Reliability of Trigonometric Transform-based Multi-Carrier Scheme". ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 6, n.º 2 (22 de diciembre de 2018): 49. http://dx.doi.org/10.14500/aro.10312.
Texto completoZhao, Xilin, Fei Liu, Bo Fu y Na Fang. "Reliability analysis of hybrid multi-carrier energy systems based on entropy-based Markov model". Proceedings of the Institution of Mechanical Engineers, Part O: Journal of Risk and Reliability 230, n.º 6 (diciembre de 2016): 561–69. http://dx.doi.org/10.1177/1748006x16663056.
Texto completoHou, Changbo, Jie Zhang, Yonggui Yuan, Jun Yang y Libo Yuan. "Reliability Demodulation Algorithm Design for Phase Generated Carrier Signal". IEEE Transactions on Reliability 71, n.º 1 (marzo de 2022): 127–38. http://dx.doi.org/10.1109/tr.2021.3125068.
Texto completoHokazono, A., S. Balasubramanian, K. Ishimaru, H. Ishiuchi, Chenming Hu y Tsu-Jae King Liu. "MOSFET hot-carrier reliability improvement by forward-body bias". IEEE Electron Device Letters 27, n.º 7 (julio de 2006): 605–8. http://dx.doi.org/10.1109/led.2006.877306.
Texto completoUraoka, Y., N. Tsutsu, Y. Nakata y S. Akiyama. "Evaluation technology of VLSI reliability using hot carrier luminescence". IEEE Transactions on Semiconductor Manufacturing 4, n.º 3 (1991): 183–92. http://dx.doi.org/10.1109/66.85938.
Texto completoQuader, K. N., E. R. Minami, Wei-Jen Ko, P. K. Ko y Chenming Hu. "Hot-carrier-reliability design guidelines for CMOS logic circuits". IEEE Journal of Solid-State Circuits 29, n.º 3 (marzo de 1994): 253–62. http://dx.doi.org/10.1109/4.278346.
Texto completoLee, Woosung y Hyunsang Hwang. "Hot carrier reliability characteristics of a bend-gate MOSFET". Solid-State Electronics 44, n.º 6 (junio de 2000): 1117–19. http://dx.doi.org/10.1016/s0038-1101(00)00004-6.
Texto completoMomose, Hisayo Sasaki, Shin-ichi Nakamura, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Toyota Morimoto, Yasuhiro Katsumata y Hiroshi Iwai. "Hot-carrier reliability of ultra-thin gate oxide CMOS". Solid-State Electronics 44, n.º 11 (noviembre de 2000): 2035–44. http://dx.doi.org/10.1016/s0038-1101(00)00101-5.
Texto completoFang, Lang, Xiaoning Zhang, Keshav Sood, Yunqing Wang y Shui Yu. "Reliability-aware virtual network function placement in carrier networks". Journal of Network and Computer Applications 154 (marzo de 2020): 102536. http://dx.doi.org/10.1016/j.jnca.2020.102536.
Texto completoQu, Long, Maurice Khabbaz y Chadi Assi. "Reliability-Aware Service Chaining In Carrier-Grade Softwarized Networks". IEEE Journal on Selected Areas in Communications 36, n.º 3 (marzo de 2018): 558–73. http://dx.doi.org/10.1109/jsac.2018.2815338.
Texto completoDózsa, L. "On the reliability of minority carrier injection DLTS spectra". physica status solidi (a) 94, n.º 2 (16 de abril de 1986): 735–43. http://dx.doi.org/10.1002/pssa.2210940240.
Texto completoMeehan, Alan, Paula O'Sullivan, Paul Hurley y Alan Mathewson. "Hot-carrier reliability lifetimes as predicted by Berkeley's model". Quality and Reliability Engineering International 11, n.º 4 (1995): 269–72. http://dx.doi.org/10.1002/qre.4680110410.
Texto completoLiu, Hong Mei y Li Juan Zhao. "Fatigue Analysis of Planet Carrier Based on Collaborative Simulation". Advanced Materials Research 189-193 (febrero de 2011): 1910–13. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1910.
Texto completoSALDANHA, JOHN P., DAWN M. RUSSELL y JOHN E. TYWORTH. "A Disaggregate Analysis of Ocean Carriers' Transit Time Performance". Transportation Journal 45, n.º 2 (2006): 39–60. http://dx.doi.org/10.2307/20713633.
Texto completoSALDANHA, JOHN P., DAWN M. RUSSELL y JOHN E. TYWORTH. "A Disaggregate Analysis of Ocean Carriers' Transit Time Performance". Transportation Journal 45, n.º 2 (2006): 39–60. http://dx.doi.org/10.5325/transportationj.45.2.0039.
Texto completoZhao, Jinghao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou y Qi Guo. "A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation". International Journal of Materials, Mechanics and Manufacturing 7, n.º 2 (abril de 2019): 100–104. http://dx.doi.org/10.18178/ijmmm.2019.7.2.439.
Texto completoHokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, C. D. Young, G. Bersuker, J. C. Lee y Hyunsang Hwang. "Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs". IEEE Electron Device Letters 27, n.º 8 (agosto de 2006): 662–64. http://dx.doi.org/10.1109/led.2006.878041.
Texto completoLin, Wei Shin. "The Reliability Analysis of a Vacuum Forming Mold for IC Packing Bag". Advanced Materials Research 136 (octubre de 2010): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.136.114.
Texto completoFoschini, G. J. "Reliability of the repelling carrier method of implementing optical FDMA". IEEE Transactions on Communications 37, n.º 12 (1989): 1275–81. http://dx.doi.org/10.1109/26.44199.
Texto completoMaricau, Elie y Georges Gielen. "Efficient Variability-Aware NBTI and Hot Carrier Circuit Reliability Analysis". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 29, n.º 12 (diciembre de 2010): 1884–93. http://dx.doi.org/10.1109/tcad.2010.2062870.
Texto completoPing-Chung Li y I. N. Hajj. "Computer-aided redesign of VLSI circuits for hot-carrier reliability". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 15, n.º 5 (mayo de 1996): 453–64. http://dx.doi.org/10.1109/43.506133.
Texto completoKueing-Long Chen, S. A. Saller, I. A. Groves y D. B. Scott. "Reliability Effects on MOS Transistors Due to Hot-Carrier Injection". IEEE Journal of Solid-State Circuits 20, n.º 1 (febrero de 1985): 306–13. http://dx.doi.org/10.1109/jssc.1985.1052307.
Texto completoKueing-Long Chen, S. A. Saller, I. A. Groves y D. B. Scott. "Reliability effects on MOS transistors due to hot-carrier injection". IEEE Transactions on Electron Devices 32, n.º 2 (febrero de 1985): 386–93. http://dx.doi.org/10.1109/t-ed.1985.21953.
Texto completoBrisbin, Douglas, Andy Strachan y Prasad Chaparala. "Optimizing the hot carrier reliability of N-LDMOS transistor arrays". Microelectronics Reliability 45, n.º 7-8 (julio de 2005): 1021–32. http://dx.doi.org/10.1016/j.microrel.2004.11.054.
Texto completoKamal, Mehdi, Qing Xie, Massoud Pedram, Ali Afzali-Kusha y Saeed Safari. "An efficient temperature dependent hot carrier injection reliability simulation flow". Microelectronics Reliability 57 (febrero de 2016): 10–19. http://dx.doi.org/10.1016/j.microrel.2015.12.008.
Texto completoPan, Y., K. K. Ng y V. Kwong. "A novel hot carrier reliability monitor for LDD p-MOSFETs". Solid-State Electronics 37, n.º 12 (diciembre de 1994): 1961–65. http://dx.doi.org/10.1016/0038-1101(94)90063-9.
Texto completoGoguenheim, D., A. Bravaix, D. Vuillaume, M. Varrot, N. Revil y P. Mortini. "HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS". Microelectronics Reliability 38, n.º 4 (abril de 1998): 539–44. http://dx.doi.org/10.1016/s0026-2714(97)00217-5.
Texto completoHori, Takashi. "Nitrided gate-oxide CMOS technology for improved hot-carrier reliability". Microelectronic Engineering 22, n.º 1-4 (agosto de 1993): 245–52. http://dx.doi.org/10.1016/0167-9317(93)90167-4.
Texto completoYi, Peng Xing, Li Jian Dong y Yuan Xin Chen. "The Multi-Objective Optimization of the Planet Carrier in Wind Turbine Gearbox". Applied Mechanics and Materials 184-185 (junio de 2012): 565–69. http://dx.doi.org/10.4028/www.scientific.net/amm.184-185.565.
Texto completoGong, Yan Jue, Fu Zhao, Hong Bing Xin, Hui Yu Xiang, Chun Ling Meng y Yuan Zhang. "Modeling and Simulation Research of Time-Dependent Reliability Model of Tooth Carrier in Feed Mechanism". Applied Mechanics and Materials 701-702 (diciembre de 2014): 739–42. http://dx.doi.org/10.4028/www.scientific.net/amm.701-702.739.
Texto completoAstashkov, Nikolay y Yuriy Belogolov. "METHOD FOR INCREASING THE RELIABILITY OF THE PHASE SPLITTERS ELECTRIC CARRIER". Modern Technologies and Scientific and Technological Progress 1, n.º 1 (17 de mayo de 2021): 217–18. http://dx.doi.org/10.36629/2686-9896-2021-1-1-217-218.
Texto completoPereguda, Arkadij Ivanovich y Vladimir Ivanovich Belozerov. "Prediction of reliability of flow sensors of SHADR-32m heat carrier". Izvestiya Wysshikh Uchebnykh Zawedeniy, Yadernaya Energetika 2017, n.º 1 (marzo de 2017): 51–62. http://dx.doi.org/10.26583/npe.2017.1.05.
Texto completoChen, Yilong, Fan Li, Kui Li, Xue Li, Min Liu y Gang Liu. "Thermal fatigue reliability improvement of leadless ceramic chip carrier solder joints". Microelectronics Reliability 132 (mayo de 2022): 114532. http://dx.doi.org/10.1016/j.microrel.2022.114532.
Texto completoMohd Dzukhi, M. I., T. A. Musa, W. A. Wan Aris, A. H. Omar y I. A. Musliman. "RELIABILITY OF THE GPS CARRIER-PHASE FIX SOLUTION UNDER HARSH CONDITION". International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences XLVI-4/W3-2021 (11 de enero de 2022): 223–27. http://dx.doi.org/10.5194/isprs-archives-xlvi-4-w3-2021-223-2022.
Texto completoJain, S., W. T. Cochran y M. L. Chen. "Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliability". IEEE Electron Device Letters 9, n.º 10 (octubre de 1988): 539–41. http://dx.doi.org/10.1109/55.17837.
Texto completoJung, Sang-Hoon, Hee-Sun Shin y Min-Koo Han. "Defect-Free Junction TFT for Improving Reliability under Hot Carrier Stress". Physica Scripta T114 (1 de enero de 2004): 127–29. http://dx.doi.org/10.1088/0031-8949/2004/t114/032.
Texto completoChen, H. W., S. Y. Chen, C. C. Lu, C. H. Liu, F. C. Chiu, Z. Y. Hsieh, H. S. Huang et al. "Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions". ECS Transactions 16, n.º 5 (18 de diciembre de 2019): 55–65. http://dx.doi.org/10.1149/1.2981587.
Texto completoDieudonné, François, Sébastien Haendler, Jalal Jomaah y Francis Balestra. "Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs". Solid-State Electronics 48, n.º 6 (junio de 2004): 985–97. http://dx.doi.org/10.1016/j.sse.2003.12.025.
Texto completoKizilyalli, I. C., J. W. Lyding y K. Hess. "Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability". IEEE Electron Device Letters 18, n.º 3 (marzo de 1997): 81–83. http://dx.doi.org/10.1109/55.556087.
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