Literatura académica sobre el tema "CARRIER RELIABILITY"
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Artículos de revistas sobre el tema "CARRIER RELIABILITY"
NASEH, SASAN y M. JAMAL DEEN. "RF CMOS RELIABILITY". International Journal of High Speed Electronics and Systems 11, n.º 04 (diciembre de 2001): 1249–95. http://dx.doi.org/10.1142/s0129156401001088.
Texto completoZHAO, Lijuan. "Reliability Design of Shearer's Planet Carrier". Journal of Mechanical Engineering 55, n.º 8 (2019): 192. http://dx.doi.org/10.3901/jme.2019.08.192.
Texto completoCheng, Junji y Xingbi Chen. "Hot-carrier reliability in OPTVLD-LDMOS". Journal of Semiconductors 33, n.º 6 (junio de 2012): 064003. http://dx.doi.org/10.1088/1674-4926/33/6/064003.
Texto completoJie Liao, Cher Ming Tan y Geert Spierings. "Hot-Carrier Reliability of Power SOI EDNMOS". IEEE Transactions on Power Electronics 25, n.º 7 (julio de 2010): 1685–91. http://dx.doi.org/10.1109/tpel.2010.2041255.
Texto completoSoares, C. Guedes y A. P. Teixeira. "Structural reliability of two bulk carrier designs". Marine Structures 13, n.º 2 (marzo de 2000): 107–28. http://dx.doi.org/10.1016/s0951-8339(00)00004-6.
Texto completoKoeppel, Gaudenz y Göran Andersson. "Reliability modeling of multi-carrier energy systems". Energy 34, n.º 3 (marzo de 2009): 235–44. http://dx.doi.org/10.1016/j.energy.2008.04.012.
Texto completoSugiharto, D. S., C. Y. Yang, Huy Le y J. E. Chung. "Beating the heat [CMOS hot-carrier reliability]". IEEE Circuits and Devices Magazine 14, n.º 5 (1998): 43–51. http://dx.doi.org/10.1109/101.721519.
Texto completoHwang, Hyunsang, Jack Lee, Pierre Fazan y Chuck Dennison. "Hot-carrier reliability characteristics of narrow-width MOSFETs". Solid-State Electronics 36, n.º 4 (abril de 1993): 665–66. http://dx.doi.org/10.1016/0038-1101(93)90284-w.
Texto completoAur, S. y Ping Yang. "IVB-6 hot-carrier reliability of trench transistor". IEEE Transactions on Electron Devices 34, n.º 11 (noviembre de 1987): 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.
Texto completoMinehane, S., S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson y B. Mason. "Direct parameter extraction for hot-carrier reliability simulation". Microelectronics Reliability 37, n.º 10-11 (octubre de 1997): 1437–40. http://dx.doi.org/10.1016/s0026-2714(97)00081-4.
Texto completoTesis sobre el tema "CARRIER RELIABILITY"
Tsarouchas, Ioannis. "Through life reliability of a bulk carrier". Thesis, University of Glasgow, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368736.
Texto completoJiang, Wenjie 1963. "Hot-carrier reliability assessment in CMOS digital integrated circuits". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47514.
Texto completoChan, Vei-Han. "Hot-carrier reliability evaluation for CMOS devices and circuits". Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36532.
Texto completoWang, Lei. "Reliability control of GNSS carrier-phase integer ambiguity resolution". Thesis, Queensland University of Technology, 2015. https://eprints.qut.edu.au/86976/1/Lei_Wang_Thesis.pdf.
Texto completoLe, Huy X. P. "Characterization of hot-carrier reliability in analog sub-circuit design". Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41379.
Texto completoIncludes bibliographical references (leaves 52-54).
by Huy X.P. Le.
M.Eng.
Kim, SeokWon Abraham 1970. "Hot-carrier reliability of MOSFETs at room and cryogenic temperature". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/28215.
Texto completoVita.
Includes bibliographical references.
Hot-carrier reliability is an increasingly important issue as the geometry scaling of MOSFET continues down to the sub-quarter micron regime. The power-supply voltage does not scale at the same rate as the device dimensions, and thus, the peak lateral E-field in the channel increases. Hot-carriers, generated by this high lateral E-field, gain more kinetic energy and cause damage to the device as the geometry dimension of MOSFETs shortens. In order to model the device hot-carrier degradation accurately, accurate model parameter extraction is critically important. This thesis discusses the model parameters' dependence on the stress conditions and its implications in terms of the device lifetime prediction procedure. As geometry scaling approaches the physical limit of fabrication techniques, such as photolithography, temperature scaling becomes a more viable alternative. MOSFET performance enhancement has been investigated and verified at cryogenic temperatures, such as at 77K. However, hot-carrier reliability problems have been shown to be exacerbated at low temperature. As the mean-free path increases at low temperature due to reduced phonon-scattering, hot-carriers become more energetic at low temperature, causing more device degradation. It is clear that various hot-carrier reliability issues must be clearly understood in order to optimize the device performance vs. reliability trade-off, both at short channel lengths and low temperatures. This thesis resolves numerous, unresolved issues of hot-carrier reliability at both room and cryogenic temperature, and develops a general framework for hot carrier reliability assessment.
by SeokWon Abraham Kim.
Ph.D.
Jiang, Liangjun. "HOT CARRIER EFFECT ON LDMOS TRANSISTORS". Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3230.
Texto completoPh.D.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Le, Huy X. P. "On the methodology of assessing hot-carrier reliability of analog circuits". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/84212.
Texto completoDas, A. G. Man Mohan. "Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits". Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4701/.
Texto completoKoeppel, Gaudenz Alesch. "Reliability considerations of future energy systems : multi-carrier systems and the effect of energy storage /". Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17058.
Texto completoLibros sobre el tema "CARRIER RELIABILITY"
Y, Tsui Paul G., ed. Hot-carrier circuit reliability simulation. Reading, Mass: Addison-Wesley, 1992.
Buscar texto completoLeblebici, Yusuf y Sung-Mo Kang. Hot-Carrier Reliability of MOS VLSI Circuits. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7.
Texto completoLeblebici, Yusuf. Hot-carrier reliability of MOS VLSI circuits. Boston: Kluwer Academic, 1993.
Buscar texto completoLeblebici, Yusuf. Hot-Carrier Reliability of MOS VLSI Circuits. Boston, MA: Springer US, 1993.
Buscar texto completoUtas, Greg. Robust communications software: Extreme availability, reliability and scalability for carrier-grade systems. Chichester: John Wiley & Sons, 2005.
Buscar texto completoFord-class carriers: Lead ship testing and reliability shortfalls will limit initial fleet capabilities : report to congressional requesters. [Washington, D.C.]: United States Government Accountability Office, 2013.
Buscar texto completoChhutiashvili, Lela. Environmental sustainability control system of economic entities. ru: INFRA-M Academic Publishing LLC., 2022. http://dx.doi.org/10.12737/1819036.
Texto completoBartoli, Gianni, Francesco Ricciardelli y Vincenzo Sepe, eds. WINDERFUL Wind and INfrastructures. Florence: Firenze University Press, 2004. http://dx.doi.org/10.36253/8884531381.
Texto completoLeonovich, Sergey, Evgeniy Shalyy, Elena Polonina, Elena Sadovskaya, Lev Kim y Valentin Dorkin. Durability of port reinforced concrete structures (Far East and Sakhalin). ru: INFRA-M Academic Publishing LLC., 2021. http://dx.doi.org/10.12737/1816638.
Texto completoOffice, General Accounting. Operation Desert Storm: Apache helicopter was considered effective in combat, but reliability problems persist : report to the Chairman, Subcommittee on Oversight and Investigations, Committee on Energy and Commerce, House of Representatives. Washington, D.C: U.S. General Accounting Office, 1992.
Buscar texto completoCapítulos de libros sobre el tema "CARRIER RELIABILITY"
Leblebici, Yusuf y Sung-Mo Kang. "Circuit Design for Reliability". En Hot-Carrier Reliability of MOS VLSI Circuits, 191–207. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_8.
Texto completoIoannou, D. E. "Hot Carrier Reliability of SOI Structures". En Physical and Technical Problems of SOI Structures and Devices, 199–210. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0109-7_18.
Texto completoScholten, A. J., B. De Vries, J. Bisschop y G. T. Sasse. "Reliability Simulation Models for Hot Carrier Degradation". En Hot Carrier Degradation in Semiconductor Devices, 477–517. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08994-2_16.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Transistor-Level Simulation for Circuit Reliability". En Hot-Carrier Reliability of MOS VLSI Circuits, 111–42. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_5.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Fast Timing Simulation for Circuit Reliability". En Hot-Carrier Reliability of MOS VLSI Circuits, 143–63. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_6.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Introduction". En Hot-Carrier Reliability of MOS VLSI Circuits, 1–13. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_1.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Oxide Degradation Mechanisms in MOS Transistors". En Hot-Carrier Reliability of MOS VLSI Circuits, 15–53. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_2.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Modeling of Degradation Mechanisms". En Hot-Carrier Reliability of MOS VLSI Circuits, 55–76. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_3.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Modeling of Damaged Mosfets". En Hot-Carrier Reliability of MOS VLSI Circuits, 77–109. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_4.
Texto completoLeblebici, Yusuf y Sung-Mo Kang. "Macromodeling of Hot-Carrier Induced Degradation in Mos Circuits". En Hot-Carrier Reliability of MOS VLSI Circuits, 165–90. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_7.
Texto completoActas de conferencias sobre el tema "CARRIER RELIABILITY"
Burnett, David y Chenming Hu. "Hot-Carrier Reliability of Bipolar Transistors". En 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363517.
Texto completoJiang, W., H. Le, J. Chung, T. Kopley, P. Marcoux y C. Dai. "Assessing circuit-level hot-carrier reliability". En 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual. IEEE, 1998. http://dx.doi.org/10.1109/relphy.1998.670509.
Texto completoWu, Xiangjun y Zongkai Yang. "Research on reliability of carrier ethernet". En Asia-Pacific Optical Communications, editado por Jianli Wang, Gee-Kung Chang, Yoshio Itaya y Herwig Zech. SPIE, 2007. http://dx.doi.org/10.1117/12.745291.
Texto completoHao, Jifa. "Hot carrier reliability in LDMOS devices". En 2017 IEEE 12th International Conference on ASIC (ASICON). IEEE, 2017. http://dx.doi.org/10.1109/asicon.2017.8252561.
Texto completoPark, Hokyung, Rino Choi, Seung Song, Man Chang, Chadwin Young, Gennadi Bersuker, Byoung Lee, Jack Lee y Hyunsang Hwang. "Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs". En 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251217.
Texto completoMittl, Steven W. y Michael J. Hargrove. "Hot Carrier Degradation in P-Channel MOSFETs". En 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363369.
Texto completoTyaginov, S. E., A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer y T. Grasser. "On the effect of interface traps on the carrier distribution function during hot-carrier degradation". En 2016 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2016. http://dx.doi.org/10.1109/iirw.2016.7904911.
Texto completoChung, James E. "Key issues in evaluating hot-carrier reliability". En Microelectronic Manufacturing 1996, editado por Ih-Chin Chen, Nobuo Sasaki, Divyesh N. Patel y Girish A. Dixit. SPIE, 1996. http://dx.doi.org/10.1117/12.250889.
Texto completoChen, Zhan y Israel Koren. "Technology mapping for hot-carrier reliability enhancement". En Microelectronic Manufacturing, editado por Ali Keshavarzi, Sharad Prasad y Hans-Dieter Hartmann. SPIE, 1997. http://dx.doi.org/10.1117/12.284706.
Texto completoAur, S. "Kinetics of Hot Carrier Effects for Circuit Simulation". En 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363367.
Texto completoInformes sobre el tema "CARRIER RELIABILITY"
La Porte, Todd R., Karlene Roberts y Gene I. Rochlin. Aircraft Carrier Operations at Sea: The Challenges of High Reliability Performance. Fort Belvoir, VA: Defense Technical Information Center, julio de 1988. http://dx.doi.org/10.21236/ada198692.
Texto completoMorrison, Robert James. SYS645 Design for Reliability Maintainability and Supportability: H12 Universal Cartridge Carrier (circa 1952). Office of Scientific and Technical Information (OSTI), enero de 2020. http://dx.doi.org/10.2172/1592836.
Texto completoMatulionis, Arvydas, H. Morkoc, U. Ozgur, J. Xie, J. H. Leach, M. Wu, X. Ni, J. Lee, X. Li y R. Katilius. Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs. Fort Belvoir, VA: Defense Technical Information Center, julio de 2010. http://dx.doi.org/10.21236/ada542888.
Texto completoNessim y Zhou. L51998 Current Status and Future Development Needs of Limit States Designs for Onshore Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), septiembre de 2003. http://dx.doi.org/10.55274/r0011219.
Texto completoChen, Qishi, Joe Zhou, Duane DeGeer, Ola Bjornoy y Richard Verley. JTM13-CCP Collapse of Corroded Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), abril de 2001. http://dx.doi.org/10.55274/r0011820.
Texto completoSOLOVYANENKO, N. I. CROSS-BORDER BUSINESS OPERATIONS IN DIGITAL ECOSYSTEMS OF THE EAEU: LEGAL ISSUES. DOI CODE, 2021. http://dx.doi.org/10.18411/0131-5226-2021-70003.
Texto completoNeuert, Mark y Smitha Koduru. PR-244-173856-R01 In-line Inspection Crack Tool Reliability and Performance Evaluation. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), junio de 2019. http://dx.doi.org/10.55274/r0011599.
Texto completoNikolova, Nikolina, Pencho Mihnev, Temenuzhka Zafirova-Malcheva, Ralitza Stamenkova, Stanislav Ivanov, Donatella Persico, Marcello Passarelli, Francesca Pozzi y Erica Volta. Intellectual Output 4: Evaluation kit for inclusion-oriented collaborative learning activities. PLEIADE Project, julio de 2023. http://dx.doi.org/10.60063/nn.2023.0089.95.
Texto completoSkow. PR-244-093703-R01 Uncertainties of In-line Inspection Crack Detection Tools Phases 1-2. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), octubre de 2014. http://dx.doi.org/10.55274/r0010828.
Texto completoXie, Gao y Olsen. PR-179-13601-R01 CFD Analysis of the Heat Transfer Characteristics and the Effect of Thermowells. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), octubre de 2013. http://dx.doi.org/10.55274/r0010818.
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