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Literatura académica sobre el tema "Capacitors"

Autor: Grafiati

Publicado: 4 de junio de 2021

Última modificación: 9 de junio de 2025

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Artículos de revistas sobre el tema "Capacitors"

Plesca, Adrian. "Considerations About Controlled Capacitors." Journal of Electrical Engineering 61, no. 3 (May 1, 2010): 189–92. http://dx.doi.org/10.2478/v10187-010-0027-2.

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Considerations About Controlled CapacitorsA new type of thermal controlled capacitor has been developed and studied. The capacitor non-linearity depends on the control parameter — temperature. At constant temperatures, the charge versus voltage curve is non-linear and has thermal inertia. Actually, it is a new method to modify the capacitors' capacitance using the thermal field as a command parameter and brings new technical solutions for protection of electrical equipment.

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Hardiyanto, Denny, Prabakti Endramawan, Ridho Nur Taufiqul Manan, and Dyah Anggun Sartika. "Arduino Implementation for Development Digital Capacitance Meters as Laboratory Measurement Devices." SinkrOn 7, no. 3 (July 2, 2022): 784–90. http://dx.doi.org/10.33395/sinkron.v7i3.11456.

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Electronics Practicum in the Laboratory is a routine activity carried out to support student skills. Capacitors are one of the components that are often used in practice. Capacitors are one of the passive electronic components that have a magnitude value in the form of capacitance in Farad units. The capacitance value indicates the capacitor's ability to store electric charge. However, the value contained on the capacitor label is not necessarily the actual value because the capacitor has a tolerance range. Of course, this is very influential in the measurement and performance of electronic circuits that use capacitors. In addition, another factor that supports this research is that the available measuring instruments, such as the multimeter, are not yet equipped with capacitance measurements. Capacitance meters available in the market are still analog. The purpose of this study is to design a device that can measure the capacitance value of capacitors as a measurement device in a digital laboratory, namely the Digital Capacitance Meter. This device is made using Arduino Uno as a microprocessor for data processing. The method used is to apply the process of charging and discharging the capacitor. In this case, Arduino Uno activates a timer to measure the time required to charge and discharge the capacitor so that the Time Constant value is obtained. By using the formula T = 0.693RC, the capacitance value can be obtained. In testing using 3 different capacitors and 10 times testing on each capacitor, the accuracy of the device is 97.76% and a relative error of 2.24%.

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Bărbulescu, Corneliu, Dadiana-Valeria Căiman, and Toma-Leonida Dragomir. "Parameter Observer Useable for the Condition Monitoring of a Capacitor." Applied Sciences 12, no. 10 (May 12, 2022): 4891. http://dx.doi.org/10.3390/app12104891.

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Monitoring the condition of electrolytic capacitors in practical applications is a topic that has been and remains the subject of much research. This article is part of research in this area. It develops a parameter observer (PO) and proposes its use for the determination of the equivalent capacity and equivalent serial resistance of electrolytic capacitors. The observer is an integral-open-loop type second-order system, the input of which is the voltage at the capacitor terminals measured during a two-stage capacitor’s discharging process through a variable resistor. The PO estimates the so-called time constant of the discharging circuit for each of the two stages from which values the capacitor’s parameters are calculated. The use of PO is illustrated for determining the output capacitor parameters of a buck DC–DC converter. The experiments were performed with two electrolytic capacitors with the nominal values 100 μF and 470 μF. Compared with other monitoring methods that use observers, the proposed observer is faster in tracking error mitigation, e.g., 10−3 s in comparison with 5·10−3 s or more. The low computational volume of the discrete-time PO allows the prospect of implementation in real time.

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Barbulescu, Corneliu, and Toma-Leonida Dragomir. "Parameter estimation for a simplified model of an electrolytic capacitor in transient regimes." Journal of Physics: Conference Series 2090, no. 1 (November 1, 2021): 012143. http://dx.doi.org/10.1088/1742-6596/2090/1/012143.

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Abstract The real capacitors’ behaviour in electric circuits modelled by a single capacity deviates from the ideal one. In order to find better compromises between precision and simplicity, different C-R-L models are used. In these models, C, R, L are called equivalent parameters and take constant values. Under these assumptions, the capacitors are modelled as lumped parameter subsystems although it is well known that the real capacitors are essentially distributed parameter systems. As highlighted in this paper, the capacitors are also time-variant subsystems. To prove this, we use two types of experimental data: data measured during the capacitor’s discharge process and data obtained from frequency characteristics. The article proposes two estimation methods of equivalent values for the model parameters C and R based on their time variance highlighted by the experimental data. The estimation methods use a system of equations associated with the discharging of capacitors, respectively, with the frequency characteristics via polynomial regression. The experiments were carried out with an electrolytic polymer capacitor rated 220 μF, 25 V, 2.5 A rms, 85 °C, designed mainly for energy storage and filtering, the results being confirmed by experiments performed on other similar capacitors.

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Jeong, Sunwoo, Akeem Bayo Kareem, Sungwook Song, and Jang-Wook Hur. "ANN-Based Reliability Enhancement of SMPS Aluminum Electrolytic Capacitors in Cold Environments." Energies 16, no. 16 (August 21, 2023): 6096. http://dx.doi.org/10.3390/en16166096.

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Due to their substantial energy density and economical pricing, switching-mode power supplies (SMPSs) often utilize electrolytic capacitors. However, their ability to function at low temperatures is essential for dependable operation in several sectors, including telecommunications, automotive, and aerospace. This study includes an experimental evaluation of how well standard SMPS electrolytic capacitors operate at low temperatures. This paper investigates the suitability of standard electrolytic capacitors used in switched-mode power supplies (SMPSs) for low-temperature applications. The experimental evaluation exposed the capacitors to temperatures ranging from −5 °C to −40 °C, assessing capacitance (Cp), impedance (Z), dissipation factor (DF), and equivalent series resistance (ESR) at each temperature. The capacitor’s time-domain electrical signals were analyzed using the Pearson correlation coefficient to extract discriminative features. These features were input into an artificial neural network (ANN) for training and testing. The results indicated a significant impact of low temperatures on capacitor performance. Capacitance decreased with lower temperatures, while the ESR and leakage current increased, affecting stability and efficiency. Impedance was a valuable diagnostic tool for identifying potential capacitor failure, showing a 98.44% accuracy drop at −5 °C and 88.75% at the peak temperature, indicating proximity to the manufacturer’s specified limit. The study suggests further research and development to improve the performance of electrolytic capacitors in SMPS systems under cold conditions, aiming to boost efficiency and reliability.

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Butnicu, Dan. "A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study." Micromachines 14, no. 1 (January 15, 2023): 221. http://dx.doi.org/10.3390/mi14010221.

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Many recent studies have revealed that PoL (Point of Load) converters’ output capacitors are a paramount component from a reliability point of view. To receive the maximum degree of reliability in many applications, designers are often advised to derate this capacitor—as such, a careful comprehending of it is required to determine the converter’s overall parameters. PoL converters are commonly found in many electronic systems. Their most important requirements are a stable output voltage with load current variation, good temperature stability, low output ripple voltage, and high efficiency and reliability. If the electronic system in question must be portable, a small footprint and volume are also important considerations—both of which have recently been well accomplished in eGaN transistor technologies. This paper provides details on how derating an output capacitor—specifically, a conductive tantalum polymer surface-mount chip, as this type of capacitor represented a step forward in miniaturization and reliability over previously existing wet electrolytic capacitors—used within a discrete eGaN-FET-based PoL buck converter determines the best performance and the highest MTBF. A setup based on an EPC eGaN FET transistor enclosed in a 9059/30 V evaluation board with a 12 V input voltage/1.2 V output voltage was tested in order to achieve the study’s main scope. Typical electrical performance and reliability data are often provided for customers by manufacturers through technical papers; this kind of public data is often selected to show the capacitors in a favorable light—still, they provide much useful information. In this paper, the capacitor derating process was presented to give a basic overview of the reliability performance characteristics of tantalum polymer capacitor when used within a DC–DC buck converter’s output filter. Performing calculations of the capacitor’s failure rate based on taking a thermal scan of the capacitor’s capsule surface temperature, the behavior of the PoL converter was evaluated.

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Bao, Changqing, Hongjia Zhu, and Jiayu Liu. "Introduction of parasitic capacitance and methods of reducing its capacitance." Applied and Computational Engineering 85, no. 1 (July 31, 2024): 141–47. http://dx.doi.org/10.54254/2755-2721/85/20240686.

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This paper aims to introduce some basic knowledge of parasitic capacitors and how to reduce the impact of parasitic capacitors in theory and in practice. In the production and processing and daily life, people will be more or less to the use of capacitors. The main function of a capacitor is to store electrical energy when it is connected to its charging circuit. When disconnected from the charging circuit, it can consume stored energy, so it can be used like a temporary battery. However, not all capacitors are good for people, such as parasitic capacitors. Parasitic capacitor is an unavoidable and usually unnecessary capacitor that exists between electronic component or parts of a circuit simply because they are close to each other. Therefore, parasitic capacitance is an important problem in high-frequency circuits and is often a limiting factor in the frequency and bandwidth of electronic component and circuits. However, complete elimination of parasitic capacitors is not possible, only through a number of methods to reduce.

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Naoi, K. "‘Nanohybrid Capacitor’: The Next Generation Electrochemical Capacitors." Fuel Cells 10, no. 5 (July 9, 2010): 825–33. http://dx.doi.org/10.1002/fuce.201000041.

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ANANDA MOHAN, P. V. "CAPACITOR FLOATATION SCHEME USING ONLY OTAs AND GROUNDED CAPACITORS." Journal of Circuits, Systems and Computers 05, no. 02 (June 1995): 181–97. http://dx.doi.org/10.1142/s021812669500014x.

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Zhang, Xing Hai, Bo Wen Zhang, Wei Feng Han, Ji Xing Sun, Guang Ning Wu, and Guo Qiang Gao. "Research on Overvoltage of Parallel Capacitors in 500kv Substation and its Protection Parameters." Applied Mechanics and Materials 303-306 (February 2013): 1920–24. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1920.

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In order to make it clear for explosion accidents of parallel capacitors occurred in 500kV substations in Sichuan power network one after another, the authors calculate and analyze the distribution of overvoltage caused by breakdown of elements within the capacitor bank. Dissecting the insulation of faulty capacitors, severe ageing of insulation is discovered; this phenomenon proves that the overvoltage on partial element should be the main factor influencing the insulating performance of capacitors. To ensure the reliable operation of parallel capacitors the setting value of unbalanced current protection at the neutral point of double star connection is modified by the calculated value of unbalanced current of 35kV capacitor bank in which there are six parallel groups of capacitors and in each group seven capacitors are connected in series.

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Tesis sobre el tema "Capacitors"

Wynne, Edward McFaddin. "Determination of the Shelf Life of Aluminum Electrolytic Capacitors." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3104/.

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The aluminum electrolytic capacitor is used extensively in the electric utility industry. A factor limiting the storage of spare capacitors is the integrity of the aluminum oxide dielectric, which over time breaks down contributing to a shelf life currently estimated at one nuclear power electric generating station to be approximately five years. This project examined the electrical characteristics of naturally aged capacitors of several different styles to determine if design parameters were still within limits. Additionally, the effectiveness of a technique known as “Reforming” was examined to determine its impact on those characteristics.

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Bereza, Bill Carleton University Dissertation Engineering Electrical. "A switched-capacitor circuit technique used to measure capacitor mismatch and explore capacitor and opamp nonlinearity." Ottawa, 1988.

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Yang, Fan. "Characterization of HFO2 Capacitors." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/YangF2003.pdf.

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Cousins, Jesse. "Simulation of the Variability in Microelectronic Capacitors having Polycrystalline Dielectrics with Columnar Microstructure." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/CousinsJL2003.pdf.

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Donahoe, Daniel Noel. "Moisture in multilayer ceramic capacitors." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2189.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Mechanical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Larsson, Oscar. "Polyelectrolyte-Based Capacitors and Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67852.

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Polymers are very attractive materials that can be tailored for specific needs and functionalities. Based on their chemical structure, they can for instance be made electrically insulating or semiconducting with specific mechanical properties. Polymers are often processable from a solution, which enables the use of conventional low-cost and high-volume manufacturing techniques to print electronic devices onto flexible substrates. A multitude of polymer-based electronic and electrochemical devices and sensors have been developed, of which some already has reached the consumer market. This thesis focuses on polarization characteristics in polyelectrolyte-based capacitor structures and their role in sensors, transistors and supercapacitors. The fate of the ions in these capacitor structures, within the polyelectrolyte and at the interfaces between the polyelectrolyte and various electronic conductors (a metal, a semiconducting polymer or a network of carbon nanotubes), is of outermost importance for the device function. The humidity-dependent polarization characteristics in a polyelectrolyte capacitor are used as the sensing probe for wireless readout of a passively operated humidity sensor circuit. This sensor circuit can be integrated into a printable low-cost passive sensor label. By varying the humidity level, limitations and possibilities are identified for polyelectrolyte-gated organic field-effect transistors. Further, the effect of the ionic conductivity is investigated for polyelectrolyte-based supercapacitors. Finally, by using an ordinary electrolyte instead of a polyelectrolyte and a high-surface area (supercapacitor) gate electrode, the device mechanisms proposed for electrolyte-gated organic transistors are unified.

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Wang, Tong. "Electrospun carbon nanofibers for electrochemical capacitor electrodes." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/22563.

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Thesis (Ph. D.)--Textile and Fiber Engineering, Georgia Institute of Technology, 2007.<br>Committee Chair: Satish Kumar; Committee Member: Anselm Griffin; Committee Member: John D. Muzzy; Committee Member: Ravi Bellamkonda; Committee Member: Rina Tannenbaum.

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Muthana, Prathap. "Design of high speed packages and boards using embedded decoupling capacitors." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-05102007-121240/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Prof Madhavan Swaminathan, Committee Chair ; Prof Rao Tummala, Committee Co-Chair ; Prof David Keezer, Committee Member ; Dr. Mahadevan Iyer, Committee Member ; Prof Suresh Sitaraman, Committee Member ; Prof William A. Doolittle, Committee Member.

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Száraz, Ildikó. "Chemical reactions in aluminium electrolytic capacitors /." Luleå, 2003. http://epubl.luth.se/1402-1544/2003/05.

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Krause, Andreas. "Ultrathin CaTiO3 Capacitors: Physics and Application." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-144522.

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Scaling of electronic circuits from micro- to nanometer size determined the incredible development in computer technology in the last decades. In charge storage capacitors that are the largest components in dynamic random access memories (DRAM), dielectrics with higher permittivity (high-k) were needed to replace SiO2. Therefore ZrO2 has been introduced in the capacitor stack to allow sufficient capacitance in decreasing structure sizes. To improve the capacitance density per cell area, approaches with three dimensional structures were developed in device fabrication. To further enable scaling for future generations, significant efforts to replace ZrO2 as high-k dielectric have been undertaken since the 1990s. In calculations, CaTiO3 has been identified as a potential replacement to allow a significant capacitance improvement. This material exhibits a significantly higher permittivity and a sufficient band gap. The scope of this thesis is therefore the preparation and detailed physical and electrical characterization of ultrathin CaTiO3 layers. The complete capacitor stacks including CaTiO3 have been prepared under ultrahigh vacuum to minimize the influence of adsorbents or contaminants at the interfaces. Various electrodes are evaluated regarding temperature stability and chemical reactance to achieve crystalline CaTiO3. An optimal electrode was found to be a stack consisting of Pt on TiN. Physical experiments confirm the excellent band gap of 4.0-4.2 eV for ultrathin CaTiO3 layers. Growth studies to achieve crystalline CaTiO3 indicate a reduction of crystallization temperature from 640°C on SiO2 to 550°C on Pt. This reduction has been investigated in detail in transmission electron microscopy measurements, revealing a local and partial epitaxial growth of (111) CaTiO3 on top of (111) Pt surfaces. This preferential growth is beneficial to the electrical performance with an increased relative permittivity of 55 with the advantage of a low leakage current comparable to that in amorphous CaTiO3 layers. A detailed electrical analysis of capacitors with amorphous and crystalline CaTiO3 reveals a relative permittivity of 30 for amorphous and an excellent value of 105 for fully crystalline CaTiO3. The permittivity exhibits a quadratic dependence with applied electric field. Crystalline CaTiO3 shows a 1-3% drop in capacitance density and permittivity at a bias voltage of 1V, which is significantly lower compared to all results for SrTiO3 capacitors measured elsewhere. A capacitance equivalent thickness (CET) below 1.0 nm with current densities 1×10−8 A/cm2 have been achieved on carbon electrodes. Finally, CETs of about 0.5 nm with leakage currents of 1 × 10−7 A/cm2 on top of Pt/TiN fulfill the 2016 DRAM requirements following the ITRS road map of 2012<br>Die Verkleinerung von elektronischen Bauelementen hin zu nanometerkleinen Strukturen beschreibt die unglaubliche Entwicklung der Computertechnologie in den letzten Jahrzehnten. In Ladungsspeicherkondensatoren, den größten Komponenten in Arbeitsspeichern, wurden dafür Dielektrika benötigt, die eine deutlich höhere Permittivität als SiO2 besitzen. ZrO2 wurde als geeignetes Dielektrikum eingeführt, um eine ausreichende Kapazität bei kleiner werdenen Strukturen sicherzustellen. Zur weiteren Verbesserung der Kapazitätsdichte pro Zellfläche konnten 3D Strukturen in die Chipherstellung integriert werden. Seit den 1990ern wurden parallel bedeutende Anstrengungen unternommen, um ZrO2 als Dielektrikum durch Materialien mit noch höherer Permittivität zu ersetzen. Nach Berechnungen stellt nun CaTiO3 eine mögliche Alternative dar, die eine weitere Verbesserung der Kapazität ermöglicht. Das Material besitzt eine deutlich höhere Permittivität und eine ausreichend große Bandlücke. Diese Arbeit beschäftigt sich deshalb mit Herstellung und detaillierter physikalischer und elektrischer Charakterisierung von extrem dünnen CaTiO3 Schichten. Zusätzlich wurden diverse Elektroden bezüglich ihrer Temperaturstabilität und der chemischen Stabilität untersucht, um kristallines CaTiO3 zu herhalten. Als eine optimale Elektrode stellte sich Pt auf TiN heraus. Physikalische Experimente an extrem dünnen CaTiO3 Schichten bestätigen die Bandlücke von 4,0-4,2 eV. Wachstumsuntersuchungen an kristallinem CaTiO3 zeigen eine Reduktion der Kristallisationstemperatur von 640°C auf SiO2 zu 550°C auf Pt. Diese Reduktion wurde detailliert mittels Transmissionselektronenmikroskopie untersucht. Es konnte für einige Schichten ein partielles lokales epitaktischesWachstum von (111) CaTiO3 auf (111) Pt gemessen werden. Dieses Vorzugswachstum ist vorteilhaft für die elektrischen Eigenschaften durch eine gesteigerte Permittivität von 55 bei gleichzeitig geringem Leckstrom vergleichbar zu amorphen Schichten. Eine genaue elektrische Analyse von Kondensatoren mit amorphen und kristallinem CaTiO3 ergibt eine Permittivität von 30 für amorphe und bis zu 105 für kristalline CaTiO3 Schichten. Die Permittivität zeigt eine quadratische Abhängigheit von der angelegten Spannung. Kristallines CaTiO3 zeigt einen 1-3% Abfall der Permittivität bei 1V, der wesentlich geringer ausfällt als vergleichbare Werte für SrTiO3. Eine zu SiO2 vergleichbare Schichtdicke (CET) von unter 1,0 nm mit Stromdichten von 1×10−8 A/cm2 wurde auf Kohlenstoffsubstraten erreicht. Mit Werten von 0,5 nm bei Leckstromdichten von 1×10−7 A/cm2 auf Pt/TiN Elektroden erfüllen die CaTiO3 Kondensatoren die Anforderungen der ITRS Strategiepläne für Arbeitsspeicher ab 2016

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Libros sobre el tema "Capacitors"

Malison, Andrew F. Capacitors. Washington, DC: Office of Industries, U.S. International Trade Commission, 1994.

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Schulz, Alexander L. Capacitors: Theory, types, and applications. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Components, Philips. Electrolytic capacitors: Data handbook. London: Philips Components, 1994.

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Components, Philips. Film capacitors: Data handbook. London: Philips Components, 1993.

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Components, Philips. Variable capacitors: Data handbook. London: Philips Components, 1993.

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Denson, William K. Reliable application of capacitors. Rome, NY (201 Mill St., Rome 13440-6916): The Center, 1996.

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Components, Philips. Ceramic capacitors: Data handbook. London: Philips Components, 1993.

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IEEE Power Engineering Society. Transmission and Distribution Committee. and Insitute of Electrical and Electronics Engineers., eds. IEEE guide for application of shunt power capacitors. New York: Institute of Electrical and Electronics Engineers, 1993.

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Kaiser, Cletus J. The capacitor handbook. New York: Van Nostrand Reinhold, 1993.

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Kaiser, Cletus J. The capacitor handbook. 2nd ed. Olathe, KS: CJ Pub., 1995.

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Capítulos de libros sobre el tema "Capacitors"

Morris, Noel M. "Capacitors and capacitor circuits." In Mastering Electronic and Electrical Calculations, 86–107. London: Macmillan Education UK, 1996. http://dx.doi.org/10.1007/978-1-349-13705-3_5.

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Bartlett, Jonathan. "Capacitors." In Electronics for Beginners, 235–53. Berkeley, CA: Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5979-5_16.

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May, Colin. "Capacitors." In Passive Circuit Analysis with LTspice®, 261–312. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-38304-6_7.

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Barnes, John R. "Capacitors." In Robust Electronic Design Reference Book, 86–125. New York, NY: Springer US, 2004. http://dx.doi.org/10.1007/1-4020-7830-7_8.

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Powell, Richard F. "Capacitors." In Testing Active and Passive Electronic Components, 21–43. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-3.

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Breithaupt, Jim. "Capacitors." In Physics, 204–17. London: Macmillan Education UK, 1999. http://dx.doi.org/10.1007/978-1-349-14825-7_16.

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Bhushan, Manjul, and Mark B. Ketchen. "Capacitors." In Microelectronic Test Structures for CMOS Technology, 107–38. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9377-9_4.

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Waygood, Adrian. "Capacitors." In An Introduction to Electrical Science, 245–50. Second edition. | Abingdon, Oxon; New York, NY: Routledge,: Routledge, 2018. http://dx.doi.org/10.1201/9781351190435-23.

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Voltmer, David. "Capacitors." In Fundamentals of Electromagnetics 1: Internal Behavior of Lumped Elements, 91–134. Cham: Springer International Publishing, 2007. http://dx.doi.org/10.1007/978-3-031-79414-8_2.

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Sayood, Khalid. "Capacitors." In Understanding Circuits, 53–66. Cham: Springer International Publishing, 2005. http://dx.doi.org/10.1007/978-3-031-02016-2_4.

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Actas de conferencias sobre el tema "Capacitors"

Nguyen, Dat T., and Frank Huang. "Stacked Polysilicon/Metal Capacitors Failure Analysis." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0262.

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Abstract Poly/metal stacked capacitors present challenges in terms of capacitor access and defect localization. As for defect localization, liquid crystal or thermal localization (also OBIRCH/TIVA) and passive voltage contrast (PVC) are used. PVC was found to be effective in terms of finding the bad stacked capacitor and a bad capacitor within the stack. This paper highlights brief process steps in 3-layer polysilicon/metal stacked capacitors. It discusses FA on stacked capacitors, providing information on fault isolation and capacitor access. It presents a case study on differentiating defective capacitors which failing due to vertical shorting. Internal probing between the capacitors within a stack allowed the differentiation between capacitor leakage and capacitor-capacitor shorting. For capacitor leakage, the defect can be identified by parallel lapping to remove the upper capacitor plate. For capacitor-capacitor short, if there is no visual defect seen, Pt chemical etch can be applied for PVC inspection.

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Shavezipur, Mohammad, Amir Khajepour, and Seyed Mohammad Hashemi. "A Novel Highly Tunable Butterfly-Type MEMS Capacitor." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-42556.

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MEMS parallel-plate tunable capacitors are widely used in different devices such as tunable filters and resonators because of their simple structures, high Q-factors and small sizes. However, these capacitors have low tuning range with nonlinear and highly sensitive capacitance-voltage (C-V) responses. In this paper the development of novel tunable capacitor designs exhibiting highly linear C-V responses, is presented. The designs use segmentation technique to produce lumped flexibility in capacitor’s structure. A numerical model is developed to simulate the behavior of the capacitor. When a actuation voltage is applied, the structural rigidity of the plate produces resistive force which balances the electrostatic force, causes nodal displacements and changes the capacitance. It is shown that by optimizing the shape of segments (from rectangular to trapezoidal) and adding flexible steps located under the segments, a low sensitive linear C-V response could be achieved, while maintaining high tunability. The results of numerical simulation for the capacitors designed for PolyMUMPs process demonstrate that by optimization of the segments shape and structural stiffness a combination of high tunability over 100% and highly linear C-V response is achievable.

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Liu, Yunting, and Fang Zheng Peng. "Real DC capacitor-less active capacitors." In 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2017. http://dx.doi.org/10.1109/apec.2017.7930611.

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Gupta, Anunay, Om Prakash Yadav, Arighna Roy, Douglas DeVoto, and Joshua Major. "Degradation Modeling and Reliability Assessment of Capacitors." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6456.

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Abstract The degradation of capacitors under accelerated stress conditions occur in a monotonic and non-linear fashion. Several efforts have been made to model the degradation behavior of capacitor considering either physics-of-failure models or statistical models and subsequently estimate its reliability and lifetime parameters. But most of these models fail to reflect the physical properties of the degradation path, which varies according to several intrinsic and extrinsic factors. These factors introduce random and temporal uncertainty among the population of capacitors. The gamma stochastic process can model both type of uncertainties among the population of capacitors. In this paper, we model the capacitor degradation by non-homogeneous gamma stochastic process in which both the model parameters (shape and scale) are dependent on stress variables. The model parameters are estimated using the maximum likelihood estimation approach.

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Allen, J. J., and R. C. Reuter. "Mechanical States in Wound Capacitors: Part II — Optimization." In ASME 1989 Design Technical Conferences. American Society of Mechanical Engineers, 1989. http://dx.doi.org/10.1115/detc1989-0120.

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Abstract The winding process is encountered frequently in manufacturing, such as winding of polymer films and paper, laminated pressure vessel construction, and the manufacture of wound capacitors. The winding of capacitors will typically involve hundreds of plies of conductor and dielectric wound over a core. Due to the large number of layers, the calculation of the mechanical states within a wound capacitor is a significant computational task. Part I of this paper discussed methods for the calculation of the mechanical states within wound capacitor. The focus of Part II of this paper is the formulation and application of optimization techniques for the design of wound capacitors. The design criteria to be achieved is a specified uniform wound tension in a capacitor. The paper will formulate an optimization statement of the wound capacitor design problem, develop a technique for reducing the numerical calculation required to repeatedly analyze the capacitor which is required by the optimization algorithm, and apply the technique to an example. The following effects will be investigated using the example. 1. The ability of low order winding tension profiles, such as constant, linear, or bilinear profiles, to meet the optimization objective. 2. The usefulness and practicality of high order winding tension profiles, which require a significant number of design variables to meet the optimization objective. 3. Differential weighting of the aluminum and mylar layer wound tensions in the objective function will be investigated as a technique for achieving the optimization/design goal.

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Peters, A. "Power capacitors - new developments." In IEE Colloquium on Capacitors and Inductors for Power Electronics. IEE, 1996. http://dx.doi.org/10.1049/ic:19960346.

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Katsis, Dimosthenis C. "Performance and Reliability of High Energy Capacitors in Inverters and DC/DC Converters." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12178.

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Emerging alternative energy systems for solar and wind are growing the demand for reliable capacitor technology. Manufacturers presently base the lifetime and reliability of their capacitors on operating temperature, ripple currents, and ambient conditions. Designers of PV inverter systems used are finding that film capacitors are emphasized for their lifetime expectations. This is especially true when compared to aluminum electrolytic capacitors. This paper presents a reliability estimate based on the core temperature of a representative film capacitor. Curves showing the performance of this component in a ripple test fixture will be presented as a reliability estimate.

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Perez, Emeric, Yasser Moursy, Sami Oukassi, and Gael Pillonnet. "Silicon Capacitors Opportunities for Switched Capacitor Converter." In 2022 IEEE 23rd Workshop on Control and Modeling for Power Electronics (COMPEL). IEEE, 2022. http://dx.doi.org/10.1109/compel53829.2022.9829949.

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Koizumi, Katsuhiro, Masaru Ishizuka, and Shinji Nakagawa. "Thermal Modeling of Snap-In Type Electrolytic Capacitors in Electronic Equipment." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89052.

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The electrolytic capacitor is one of the most important components for the thermal analysis of electronic equipment. To predict component and system temperatures, the thermal flow simulation technique has been applied to thermal design in the development phase of electronic equipment. In this study, we examined a compact modeling method for electrolytic capacitors in order to simulate thermal flow based on the computational fluid dynamics (CFD) code. To obtain fundamental data for the thermal modeling method, first, we conducted experiments to identify the major thermal path of electrolytic capacitors in actual electronic equipment by using a switch mode power supply unit. Next, to verify the validity of the thermal model, a benchmark experiment was conducted to obtain actual measurement data of the temperature rise of electrolytic capacitors under various operating conditions. The thermal model of the electrolytic capacitor was presented based on the CFD code, which is a commercially available thermal flow simulation tool. In this paper, we describe in particular the snap-in type electrolytic capacitor.

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Mahinay, Christopher S., Christian Reyes, Ricardo Calanog, and Raymond Mendaros. "Intricacies in the Failure Analysis of Integrated Capacitors." In ISTFA 2023. ASM International, 2023. http://dx.doi.org/10.31399/asm.cp.istfa2023p0045.

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Abstract Integrated capacitors use metal plates such as in Metal-Insulator-Metal (MIM) and Metal-Oxide-Metal (MOM) capacitors while Polysilicon and Silicon (Si) substrate for metal-oxide-semiconductor (MOS) capacitors. Three major challenges and solutions were discussed in this technical paper. First, the failure site localization of a subtle defect in the capacitor plates. To determine the specific location of the defect site, Electron Beam Induced Current (EBIC) analysis was performed while the part was biased using a nano-probe set-up under Scanning Electron Microscopy (SEM) environment. Second, Failure Mechanism contentions between Electrically Induced Physical Damage (EIPD) or Fabrication process defect particularly, for damage site that is not at the edge of the capacitor and without obvious manifestations of Fabrication process anomalies such as bulging, void, unetched material or shifts in the planarity of the die layers. To further understand the defect site, Scanning Transmission Electron Microscopy (STEM) coupled with Energy-Dispersive X-ray Spectroscopy (EDS) were utilized to obtain high magnification imaging and elemental area mapping. Third, misled conclusion to be an EIPD site manifested by burnt and reflowed metallization. The EIPD site was only a secondary effect of a capacitor dielectric breakdown. This has been uncovered after understanding the circuit connectivity, inspections of the capacitors connected to the EIPD site, fault isolation and further physical failure analysis were performed. As results of the Failure Analysis (FA), Customer and Analog Devices Incorporated (ADI) manufacturing hold lots were accurately dispositioned and related corrective actions were precisely identified and implemented.

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Informes sobre el tema "Capacitors"

Renk, Timothy Jerome, and Todd C. Monson. Ultra-thin multilayer capacitors. Office of Scientific and Technical Information (OSTI), June 2009. http://dx.doi.org/10.2172/973850.

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Yushin, Gleb. High Power Electrochemical Capacitors. Fort Belvoir, VA: Defense Technical Information Center, March 2012. http://dx.doi.org/10.21236/ada567578.

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GENERAL ATOMICS SAN DIEGO CA. High Energy Density Cryogenic Capacitors. Fort Belvoir, VA: Defense Technical Information Center, July 2006. http://dx.doi.org/10.21236/ada454866.

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Welsch, Gerhard. Titanate Capacitors for Power Electronics. Office of Scientific and Technical Information (OSTI), November 2019. http://dx.doi.org/10.2172/1580082.

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K. Xu, S. P. Ding, and T. R. Jow. Nonaqueous Electrolyte Development for Electrochemical Capacitors. Office of Scientific and Technical Information (OSTI), September 1999. http://dx.doi.org/10.2172/15050.

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Boufelfel, Ali. High Energy Density Polymer Film Capacitors. Fort Belvoir, VA: Defense Technical Information Center, October 2006. http://dx.doi.org/10.21236/ada459821.

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Clark, D. Low Temperature Effects: Surface Mount Capacitors. Office of Scientific and Technical Information (OSTI), August 1992. http://dx.doi.org/10.2172/1031795.

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Wright, R. B., and T. C. Murphy. Evaluation of SAFT America, Inc. electrochemical capacitors. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/573327.

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Seiber, Larry Eugene, Joseph Philip Cunningham, Steve S. Golik, and Gary Armstrong. Evaluation and Characterization of Magnets and Capacitors. Office of Scientific and Technical Information (OSTI), October 2006. http://dx.doi.org/10.2172/974615.

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Seiber, L. E., J. P. Cunningham, S. S. Golik, and G. Armstrong. Evaluation and Characterization of Magnets and Capacitors. Office of Scientific and Technical Information (OSTI), October 2006. http://dx.doi.org/10.2172/947390.

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