Bibliografías temáticas / C40-TiSi2

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Literatura académica sobre el tema "C40-TiSi2"

Autor: Grafiati
Publicado: 25 de mayo de 2024

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Artículos de revistas sobre el tema "C40-TiSi2"

1

Zhang, Z.-B., S.-L. Zhang, D.-Z. Zhu, H.-J. Xu y Y. Chen. "Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study". Journal of Materials Research 17, n.º 4 (abril de 2002): 784–89. http://dx.doi.org/10.1557/jmr.2002.0115.

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Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °C led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si2 also began to transform into C54 (Mo,Ti)Si2 at 600 °C. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 °C. However, a small amount of (Mo,Ti)5Si3 was still present in the vicinity of the sample surface. Upon annealing at 650 °C, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si2 on top of TiSi2. Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.
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2

Chen, S. Y., Z. X. Shen, K. Li, A. K. See y L. H. Chan. "Synthesis and characterization of pure C40 TiSi2". Applied Physics Letters 77, n.º 26 (25 de diciembre de 2000): 4395–97. http://dx.doi.org/10.1063/1.1329864.

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3

Quintero, A., M. Libera, C. Cabral, C. Lavoie y J. M. E. Harper. "Mechanisms for enhanced C54–TiSi2 formation in Ti–Ta alloy films on single-crystal Si". Journal of Materials Research 14, n.º 12 (diciembre de 1999): 4690–700. http://dx.doi.org/10.1557/jmr.1999.0635.

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The mechanisms are studied for enhanced formation of C54–TiSi2 at about 700 °C when rapid thermal annealing at 3 °C/s in N2 is performed on 32-nm-thick codeposited Ti–5.9 at.% Ta on Si(100) single-crystal substrates. The enhancement is related to an increased C54–TiSi2 nucleation rate due to the development of a multilayered microstructure. The multilayer microstructure forms at temperatures below 600 °C with the formation of an amorphous disilicide adjacent to the Si substrate and a M5Si3 (M = Ti, Ta) capping layer. This amorphous disilicide crystallizes at higher temperatures to C49–TiSi2. The multilayer microstructure introduces an additional interface that increases the area available for the heterogeneous nucleation of C54. The capping layer is identified as hexagonal Ti 5Si3 or its isomorphous compound (Ti1–xTax)5Si3. Crystal simulations demonstrate that C54(040) has a lattice mismatch of 6–7% relative to Ti5Si3(300) suggesting that a pseudomorphic epitaxial relationship may lower the interfacial energy between these two phases and reduce the energy barrier for C54 nucleation. A C40 disilicide phase was also observed at temperatures above that required to form C54–TiSi2 suggesting that, in the present experiments, the C40 phase does not play a major role in catalyzing C54 formation.
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4

Li, K., S. Y. Chen y Z. X. Shen. "Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation". Applied Physics Letters 78, n.º 25 (18 de junio de 2001): 3989–91. http://dx.doi.org/10.1063/1.1378309.

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5

Yu, T., S. C. Tan, Z. X. Shen, L. W. Chen, J. Y. Lin y A. K. See. "Structural study of refractory-metal-free C40 TiSi2 and its transformation to C54 TiSi2". Applied Physics Letters 80, n.º 13 (abril de 2002): 2266–68. http://dx.doi.org/10.1063/1.1466521.

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6

Quintero, A., M. Libera, C. Cabral, C. Lavoie y J. M. Harper. "Templating Effects On C54-Tisi2 Formation In Ternary Reactions." Microscopy and Microanalysis 4, S2 (julio de 1998): 666–67. http://dx.doi.org/10.1017/s143192760002345x.

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Titanium disilicide (C54-TiSi2) is a low resistivity silicide (15 - 20 μΩ-cm) and is widely used in the device industry. It is formed at about 750-850 °C when thin layers (∽30- lOOnm) of Ti on poly- or single-crystal Si substrates are subjected to rapid thermal annealing (3 °C/sec) in a controlled atmosphere (N2). During the anneal, other Ti silicides such as Ti5Si3, Ti5Si4 ,TiSi and C49-TiSi2 may form prior to the desirable C54-TiSi2.Some attempts have been made to promote low-temperature C54-TiSi2 formation. Depositing a Mo (l-2nm) interlayer between Ti and Si has been reported to decrease the C54 formation temperature by 100 °C.2 Codepositing Ti with Ta, Nb or Mo has successfully decreased the formation temperature by about 150 °C.3 These findings have been interpreted in terms of a template mechanism which facilitates formation of C54 by advantageous lattice matching between similar planes in C54 and a hexagonal ternary (Ti- X-Si, X=Ta, Nb, Mo) C40 precursor phase.
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7

Esposito, L., S. Kerdilès, M. Gregoire, P. Benigni, K. Dabertrand, J. G. Mattei y D. Mangelinck. "Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature". Journal of Applied Physics 128, n.º 8 (agosto de 2020): 085305. http://dx.doi.org/10.1063/5.0016091.

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8

Wang, R. N., J. Y. Feng y Y. Huang. "Effects of intermediate phase C40 TiSi2 on the formation temperature of C54 TiSi2 with a Ta interlayer". Journal of Crystal Growth 253, n.º 1-4 (junio de 2003): 280–85. http://dx.doi.org/10.1016/s0022-0248(03)01012-1.

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9

Káňa, T., Mojmír Šob y V. Vitek. "Transformation Paths in Transition-Metal Disilicides". Key Engineering Materials 465 (enero de 2011): 61–64. http://dx.doi.org/10.4028/www.scientific.net/kem.465.61.

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We suggest and investigate three possible displacive transformation paths between the ideal C11b, C40 and C54 structures in MoSi2, VSi2 and TiSi2 by calculating ab initio total energies along these paths. An estimate of transition temperatures based on the calculated energy barriers leads to values comparable with the melting temperatures of the disilicides studied. This confirms their high temperature stability and indicates that if a phase transformation between C11b, C40 and C54 structures of the disilicides takes place, then its prevailing mechanism should be diffusional rather than martensitic like. During the transformations studied, atoms come as close together as, for example, in configurations with interstitials. Hence, the present ab initio results can also help in fitting adjustable parameters of semi-empirical interatomic potentials for the transition-metal disilicides, in particular of the repulsion at short separations of atoms.
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10

Via, F. La, F. Mammoliti y M. G. Grimaldi. "Reaction of the Si/Ta/Ti system: C40 TiSi2 phase formation andin situkinetics". Journal of Applied Physics 91, n.º 2 (15 de enero de 2002): 633–38. http://dx.doi.org/10.1063/1.1421212.

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