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Literatura académica sobre el tema "Bipolar model"

Autor: Grafiati
Publicado: 25 de mayo de 2024

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Artículos de revistas sobre el tema "Bipolar model"

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CHEN, Jun-Liang, Chang-Chun WANG y Chao CHEN. "Extended Bipolar Argumentation Model". Journal of Software 23, n.º 6 (29 de agosto de 2012): 1444–57. http://dx.doi.org/10.3724/sp.j.1001.2012.04067.

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Sulastri, Heni, Asifa Asri y Azrul Azwar. "Analogi Mekanik Model Gangguan Jiwa Bipolar". PRISMA FISIKA 9, n.º 1 (12 de abril de 2021): 30. http://dx.doi.org/10.26418/pf.v9i1.45235.

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Telah dilakukan studi pada model gangguan jiwa bipolar. Penelitian ini bertujuan menginterpretasikan tentang redaman negatif dalam model gangguan jiwa bipolar berdasarkan tinjauan mekanika, serta menentukan jenis kestabilan dan keberadaan fenomena limit cycle dari model tersebut. Perubahan kondisi suasana hati yang ekstrim dari pasien gangguan jiwa bipolar dapat dimodelkan secara matematis dengan menggunakan model osilator harmonik yang teredam negatif. Terdapat dua keadaan penderita yaitu gangguan jiwa bipolar tanpa pengobatan dan dengan pengobatan. Selanjutnya, solusi persamaan gangguan jiwa bipolar yang dituliskan dalam bentuk sistem persamaan non-linear autonomus untuk mendapatkan nilai Eigen sehingga diperoleh hasil bahwa model gangguan bipolar tanpa pengobatan dan dengan pengobatan ditinjau dari sistem yang berosilasi yaitu (dimana dan merupakan parameter), menghasilkan nilai Eigen bagian riil positif dan menunjukkan bahwa titik tersebut merupakan titik tak stabil. Pada diagram fasa yang diselesaikan secara numerik menggunakan Ordinary Differential Equation 45 (ODE45) model gangguan jiwa bipolar dengan pengobatan memiliki sebuah limit cycle yang unik. Eksistensi limit cycle ini menyebabkan orbit pada bidang fase akan menuju ke suatu lingkaran tertentu. Limit cycle inilah diinterpretasikan sebagai keberhasilan proses pengobatan, karena keadaan emosional penderita berosilasi dalam batas yang ditentukan.
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Granstrom, Kjell y Dan Stiwne. "A Bipolar Model of Groupthink". Small Group Research 29, n.º 1 (febrero de 1998): 32–56. http://dx.doi.org/10.1177/1046496498291002.

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Moradzadeh, Arash, Michael Joel Brenner, Elizabeth Whitlock, Janina Paula Delpilar Luciano, Terence Michael Myckatyn, Hunter Daniel, Alice Tong y Susan E. Mackinnon. "R416 – Bipolar Cautery: Sunderland Third Degree Nerve Injury Model". Otolaryngology–Head and Neck Surgery 139, n.º 2_suppl (agosto de 2008): P182—P183. http://dx.doi.org/10.1016/j.otohns.2008.05.570.

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Problem The prognosis of bipolar electrocautery nerve injury is unpredictable because few experiments compare it to characterized nerve injury models. Methods 16 Lewis rats were randomized to sciatic crush or bipolar cautery and at 21 days evaluated with nerve morphometry and walking tack analysis. Double transgenic Thy1-CFP/S100-GFP mice were used to serially image axonal regeneration and Schwann cells (SC) over time following injury. Results In rats, bipolar cautery injury shows greater disruption of myelin and neurofilament architecture at the injury site. There is decreased total nerve fiber counts distal to the injury (p<0.05). Walking track analysis demonstrates functional recovery after crush, but not after cautery injury. Serial imaging of mice, shows axonal regeneration starting at week 1 after crush, but late, partial axonal regeneration in the cautery group; these findings were reflected in endplate reinnervation at 42 days. Conclusion Results suggest that a Sunderland type 3 injury, characterized by slow, variable, incomplete recovery, results from a bipolar electrocautery injury. Significance Bipolar cautery injuries can be observed without immediate surgical intervention.
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Saputra, Eko, Iwan Budiwan Anwar, Rifky Ismail, J. Jamari y Emile van der Heide. "Study of Unipolar and Bipolar Hip Prostheses Using Finite Element Simulation: Contact Stress Analysis". Key Engineering Materials 739 (junio de 2017): 96–102. http://dx.doi.org/10.4028/www.scientific.net/kem.739.96.

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One of phenomena which cannot be avoided in the hip prosthesis due to sliding contact as a product of human activity is wear on the surface of contact interaction Wear in the bipolar model is more complicated than the unipolar model. There are two contact interaction in the bipolar model, while the unipolar model has only one contact interaction. Wear on the liner and cup surfaces of the bipolar model itself can be early estimated by investigation the contact stresses due to their contact interactions. The contact stress on the liner surface of unipolar model can be estimated using analytical method. However, the estimation of contact stress on the liner and cup surface of the bipolar model using analytical method still need to consider. The aiming of this paper is to study the contact stresses on the liner and cup surfaces in the bipolar model of hip prosthesis using the finite element simulation. There are three model of hip prostheses which are simulated in this research, i.e. the unipolar, bipolar and big head unipolar models. The result showed that the maximum contact stress on the liner surface of bipolar model is higher than the unipolar model. The maximum contact stress on the cup surface of the bipolar model is lower than the big head unipolar model. Based on this results, it can be concluded that the contact stress on the liner and cup surfaces of the bipolar model cannot be estimated using analytical method.
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Filipowicz, Katarzyna, Tomasz Misiak y Tomasz Tokarski. "Bipolar growth model with investment flows". Economics and Business Review 2 (16), n.º 3 (30 de septiembre de 2016): 32–56. http://dx.doi.org/10.18559/ebr.2016.3.4.

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Najm, F. "VBIC95: an improved bipolar transistor model". IEEE Circuits and Devices Magazine 12, n.º 2 (marzo de 1996): 11–15. http://dx.doi.org/10.1109/101.485907.

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Chen, Xiu Qing y Li Chen. "The bipolar quantum drift-diffusion model". Acta Mathematica Sinica, English Series 25, n.º 4 (25 de marzo de 2009): 617–38. http://dx.doi.org/10.1007/s10114-009-7171-2.

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Li, Zhi-Yun y Frank H. Shu. "A Quantitative Model for Bipolar Molecular Outflows". International Astronomical Union Colloquium 163 (1997): 757. http://dx.doi.org/10.1017/s0252921100043815.

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AbstractSince their first discovery in 1980, nearly 200 bipolar molecular outflows have now been observed. These outflows appear to be a ubiquitous phenomenon in the star formation process, although their origin remains unclear. Here, we adopt the thin-shell model of Shu, Ruden, Lada, & Lizano (1991, ApJL, 370, 31) in which bipolar molecular outflows are the swept-up ambient material by powerful winds from central young stellar objects. Besides explaining many observed features of bipolar sources, such as shape, velocity, and the typical extent, this model also naturally accounts for the so-called “Hubble law” of velocity field. However, it was criticized by Masson & Chernin (1992, ApJ, 387, L47) on the ground that much less mass is observed at the high velocity end of some bipolar outflows than expected from this thin-shell model, unless the wind and/or the ambient medium are extremely anisotropic. We show that the extreme anisotropy is in fact inevitable both in the wind and in the ambient medium, because of the presence of dynamically important magnetic fields.The wind is anisotropic because it is magneto-centrifugally driven, and the frozen-in toroidal field tends to collimate the flow toward the rotation axis. This effect is studied using the well-known “method of characteristics” and we conclude that a MHD wind always has two components: a well-collimated jet and a wind-angle wind. It is the wide-angle wind component that will interact with the ambient medium and produce bipolar molecular outflows. The ambient core medium is anisotropic because it arises from lower-density, magnetically-supported molecular clouds through ambipolar diffusion. Using self-similarity technique, we model the “pivotal state” of star formation, which divides the core formation phase and the core collapse (accretion) phase. We find that pivotal states have toroid-like density contours in general, with lower-density regions around the magnetic axis (where matter drains more easily).When these anisotropics induced by magnetic fields are taken into account properly, the main argument against the wind-angle wind-driven, thin-shell model for bipolar molecular outflows disappears. Indeed, we show that the empirical mass-velocity relation found by Masson & Chernin and others for bipolar outflows provides the best quantitative supporting evidence for the thin-shell theory!
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Agustin Widyowati, Katmini y Predito Prihantoro. "Application the Cognitive-Behavioral Model of Relapse in Preventing Bipolar Relapse at RSI. Madinah Tulungagung". Journal Of Nursing Practice 7, n.º 2 (29 de abril de 2024): 241–51. http://dx.doi.org/10.30994/jnp.v7i2.392.

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Background: Mental health has a low early mortality rate, but contributes the most to disability and recurrence is an indicator of successful treatment of mental disorders, including bipolar. Bipolar relapse is caused by many factors or high-risk situations. Purpose: The purpose of this study was to analyze the determinants of bipolar relapse from a cognitive-behavioral model of relapse. Method: This research was conducted at Islamic Hospital of Madinah Tulungagung used a correlational design with a cross sectional approach to 108 respondents who were taken using a simple random sampling technique. The exogenous variables were genetics, age of onset, gender, occupation, marriage, family support, social capital, stigma, self-efficacy, motivation, medication adherence and the endogenous variable was bipolar relapse, using a questionnaire and analyzed path analysis. Results: Genetics, occupation, social capital, self-efficacy, motivation, medication adherence, community stigma and family support have a direct effect on bipolar relapse with a p-value <0.05. Community stigma has an indirect effect on bipolar relapse through medication adherence with a path coefficient (b) of 11.35. Family support has an indirect effect on bipolar relapse through medication adherence (b = 8.9), motivation (b = 11.89) and self-efficacy (b = 18.26). The most effective way to prevent bipolar relapse is family support which has an indirect effect on bipolar relapse through self-efficacy. Conclusion: Family support is expected to increase self-efficacy so that it is effective in preventing bipolar relapse.
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Tesis sobre el tema "Bipolar model"

1

Atkinson, Juan Pablo. "Cost model for bipolar plate manufacture". Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/71625.

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Thesis (MScEng)--Stellenbosch University, 2012.
ENGLISH ABSTRACT: This thesis gives a cost model for the manufacture of bipolar plates in South Africa. The methods for the manufacture considered are machining, using a micro-milling machine, and compression moulding. The focus of this thesis is on compression moulding. Details of the work done towards developing and validating the models are described, and then the cost models are discussed in detail. The results of the analysis done using the cost model is given with attention paid to the effect of changing design parameters, such as channel size and flow field area, and of the cost of production for both methods over various production volumes. The thesis concludes that compression moulding becomes the better option for production volumes greater than 324 bipolar plates, with a cost that eventually reaches close to R140 per plate for high enough production volumes (over 5000). The cost to produce 1000 plates using compression moulding is estimated at R294 per plate. An increase of the channel size gives a small reduction in the total cost, while the increase in cost with an increase in flow field area is large.
AFRIKAANSE OPSOMMING: Hierdie tesis gee 'n koste-model vir die vervaardiging van bipolêre plate in Suid- Afrika. Die vervaardigingsmetodes wat oorweeg word, is masjinering deur 'n mikro-freesmasjien en persvorming. Die fokus van hierdie tesis is op persvorming. Die besonderhede van die ontwikkeling en validering van die modelle word beskryf, en daarna word die modelle in besonderhede beskryf. Die resultate van 'n analise wat met die koste-model gedoen is, word daarna gegee, met die oorweging van die verandering van ontwerp-parameters soos die vloeikanaalgrootte en vloeiveld-area, en van die koste van vervaardiging vir beide metodes vir verskeie produksievolumes. Die tesis kom tot die slotsom dat persvorming die voorkeurproses is vir produksievolumes groter as 324 bipolêre plate, met 'n koste wat tot naastenby R140 per plaat daal vir hoë produksievolumes (meer as 5000). Die koste om 1000 plate met persvorming te maak, word op R294 per plaat beraam. 'n Toename in kanaalgrootte gee 'n klein vermindering in die totale koste, terwyl die toename in koste groot is wanneer die vloeiveld-area toeneem.
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2

Lamontagne, Maurice. "Development of a statistical model for NPN bipolar transistor mismatch". Link to electronic thesis, 2007. http://www.wpi.edu/Pubs/ETD/Available/etd-053007-105648/.

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Iyer, Indira G. "Implementation of bipolar transistor model in a waveform relaxation simulator". Ohio : Ohio University, 1989. http://www.ohiolink.edu/etd/view.cgi?ohiou1182437646.

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Arreguit, Xavier. "Compatible lateral bipolar transistors in CMOS technology : model and applications /". [S.l.] : [s.n.], 1989. http://library.epfl.ch/theses/?nr=817.

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Ghosh, Sudip. "Electronical model evaluation and development of compact model including aging for InP heterojunction bipolar transistors (HBTs)". Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14451/document.

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Les technologies de transistors bipolaires à hétérojonctions (HBT) ont montré leur efficacité pour permettre aux circuits de traiter les grands signaux au delà de 100Gbit/s pour les réseaux optiques Ethernet. Pour assurer ce résultat, une bonne fiabilité doit être garantie. Des tests de vieillissements accélérés sous contraintes thermiques et électrothermiques sont réalisés et analysés avec les outils de simulation physique Sentaurus TCAD afin d’obtenir les lois de vieillissement physiques. Le modèle compact HICUM niveau 2, basé sur la physique, est utilisé pour modéliser précisément le composant avant vieillissement, puis pour ajuster les caractéristiques intermédiaires pendant le vieillissement. L’évolution des paramètres du modèle est décrit avec des équations appropriées pour obtenir un modèle électrique compact du vieillissement basé sur la physique. Les lois de vieillissement et les équations d’évolutions des paramètres avec le temps de contrainte sont implantées dans le modèle électrique de vieillissement en langage Verilog-A, ce qui permet de simuler l’impact des mécanismes de défaillances sur le circuit en conditions opérationnelles
Modern InP Heterojunction Bipolar Transistors (HBT) technology has shown its efficiency for making large signal ICs working above 100 Gbits/s for Ethernet optical transport network. To full-fill this expectation, a good reliability has to be assured. Accelerated aging tests under thermal and electro-thermal stress conditions are performed and analyzed with Sentaurus TCAD device simulation tools to achieve the physical aging laws. The physics based advanced bipolar compact model HICUM Level 2 is used for precise modeling of the devices before aging. The HICUM parameters are extracted to fit the intermediate characterizations during aging. The evolution of the model parameters is described with suitable equations to achieve a physics based compact electrical aging model. The aging laws and the parameter evolution equations with stress time are implemented in compact electrical aging model in Verilog-A languages which allows us to simulate the impact of device failure mechanisms on the circuit in operating conditions
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6

Carroll, James M. "The psychometrics of a bipolar valence activation model of self-reported affect". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ56520.pdf.

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Essmann, Erich C. "A cost model for the manufacture of bipolar plates using micro milling". Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/20319.

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Thesis (MScEng)--Stellenbosch University, 2012.
ENGLISH ABSTRACT: In a move towards cleaner and more sustainable energy systems, hydrogen as an energy carrier and hydrogen fuel cells as energy converters are receiving increasing global attention. Considering the vital role that platinum plays in the operation of hydrogen fuels cells, South Africa stands to gain enormously as the world’s leading platinum group metals supplier. Therefore, in order to benefit across the whole value chain, it is imperative to develop the capability to manufacture hydrogen fuel cell stacks locally. This project addresses this imperative, in part, by building a framework to evaluate the manufacturing performance of one of the more costly components of the hydrogen fuel cell stack. More specifically, this project builds a cost evaluation model (or cost model) for the manufacture of bipolar plates using micro milling. In essence, the model characterises manufacturing cost (and time) as a function of relevant inputs. The model endeavours to be flexible in accommodating relevant contributing cost drivers such as tool life and manufacturing time. Moreover, the model lays the groundwork, from a micro milling perspective, for a comparison of different manufacturing methods for bipolar plates. The approach taken in building the cost model is a fundamental one, owing to the lack of historical cost data for this particular process. As such, manufacturing knowledge and experimentation are used to build the cost model in a structured way. The process followed in building the cost model begins with the formulation of the cost components by reviewing relevant examples from literature. Thereafter, two main cost drivers are comprehensively addressed. Tool life is characterised experimentally as a function of cutting parameters and manufacturing time is characterised as a function of relevant inputs. The work is then synthesized into a coherent cost model. Following the completion of the cost model, analysis is done to find the near-optimal combination of machine cutting parameters. Further, analysis is done to quantify the sensitivity of manufacturing cost to design changes and production volumes. This attempts to demonstrate how typical managerial issues can be addressed using the cost model format. The value of this work must be seen in terms of its practical contribution. That is, its contribution to the development of the capability to manufacture hydrogen fuel cells locally. By understanding the effect of relevant input factors on manufacturing cost, ‘upstream’ design and development activities can be integrated with ‘downstream’ manufacturing activities. Therefore, this project supports the development of manufacturing capability by providing a mechanism to control cost throughout the process.
AFRIKAANSE OPSOMMING: In die soeke na skoner, meer volhoubare energie bronne word die fokus op waterstof, as energie draer, en waterstof brandstofselle, as energie omskakelaars, al meer verskerp. Deur die sleutelrol van platinum in die werking van waterstof brandstofselle in ag te neem, word Suid-Afrika, as die wêreld se grootste platinum verskaffer, in `n uitstekende posisie geplaas om voordeel te trek uit hierdie geleentheid. Om dus as land voordeel te trek uit die proses in geheel, is dit van kardinale belang om die vermoë te ontwikkel om waterstof brandstofsel stapels op eie bodem te vervaardig. Hierdie projek adresseer gedeeltelik hierdie noodsaaklikheid, deur `n raamwerk te bou wat die vervaardigingsoptrede van een van die meer duursame komponente van die waterstof brandstofsel stapel evalueer. Meer spesifiek, bou hierdie projek `n koste evaluerings model (of koste model) vir die vervaardiging van bipolêre plate deur die gebruik van mikro-masjienering. In wese kenmerk hierdie model vervaardigings kostes (en tyd) as `n funksie van relevante insette. Hierdie model poog om buigsaam te wees met die in ag neming van relevante bydraende kostedrywers soos buitelleeftyd en vervaardigingstyd. Daarbenewens lê hierdie model die grondwerk, vanuit `n mikro masjienerings oogpunt, vir die vergelyking van verskillende vervaardingings metodes vir bipolêre plate. Die benadering wat gevolg word in die bou van die koste model is fundamenteel as gevolg van die gebrek van historiese data vir hierdie spesifieke proses. As sodanig word vervaardigings kennis en eksperimentering gebruik om die koste model in `n gestruktueerde wyse te bou. Die proses gevolg in die bou van die koste model begin met die formulering van die koste komponente deur die hersiening van relevante voorbeelde vanuit die literatuur. Daarna word twee hoof koste drywers deeglik geadresseer. Buitelleeftyd word ekperimenteel gekenmerk as funksie van masjieneringsparameters en vervaardigingstyd word gekenmerk as `n funksie van relevante insette. Die werk word dan gesintetiseer in `n samehangende koste model. Wat volg op die voltooiing van die koste model is `n analise om die optimale kombinasie masjieneringsparameters te vind. Daaropvolgens word analises gedoen om die sensitiwiteit van vervaardigingskoste onderworpe aan ontwerpsveranderings en produksie volumes te kwantisfiseer. Dit poog om te demostreer hoe tipiese bestuursproblem geadresseer kan word deur die koste model formaat te gebruik. Die waarde van hierdie werk moet in die lig van die praktiese bydrae daarvan gesien word, menende, die bydrae tot die ontwikkeling van die vermoë om waterstof brandstofselle in Suid-Afrika te vervaardig. Deur die effek van relevante inset faktore op vervaardigingskoste te verstaan, kan ‘stroom-op’ ontwerp en ontwikkelings aktiwiteite geïntegreer word met ‘stroom-af’ vervaardigings aktiwiteite. Dus, hierdie projek ondersteun die ontwikkeling van vervaardigingsvermoëns deur `n meganisme te voorsien om kostes oor die omvang van die proses te beheer.
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Linder, Martin. "DC Parameter Extraction and Modeling of Bipolar Transistors". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3172.

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Stein, Félix. "SPICE Modeling of TeraHertz Heterojunction bipolar transistors". Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.

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Les études qui seront présentées dans le cadre de cette thèse portent sur le développement et l’optimisation des techniques pour la modélisation compacte des transistors bipolaires à hétérojonction (TBH). Ce type de modélisation est à la base du développement des bibliothèques de composants qu’utilisent les concepteurs lors de la phase de simulation des circuits intégrés. Le but d’une technologie BiCMOS est de pouvoir combiner deux procédés technologiques différents sur une seule et même puce. En plus de limiter le nombre de composants externes, cela permet également une meilleure gestion de la consommation dans les différents blocs digitaux, analogiques et RF. Les applications dites rapides peuvent ainsi profiter du meilleur des composants bipolaires et des transistors CMOS. Le défi est d’autant plus critique dans le cas des applications analogiques/RF puisqu’il est nécessaire de diminuer la puissance consommée tout en maintenant des fréquences de fonctionnement des transistors très élevées. Disposer de modèles compacts précis des transistors utilisés est donc primordial lors de la conception des circuits utilisés pour les applications analogiques et mixtes. Cette précision implique une étude sur un large domaine de tensions d’utilisation et de températures de fonctionnement. De plus, en allant vers des nœuds technologiques de plus en plus avancés, des nouveaux effets physiques se manifestent et doivent être pris en compte dans les équations du modèle. Les règles d’échelle des technologies plus matures doivent ainsi être réexaminées en se basant sur la physique du dispositif. Cette thèse a pour but d’évaluer la faisabilité d’une offre de modèle compact dédiée à la technologie avancée SiGe TBH de chez ST Microelectronics. Le modèle du transistor bipolaire SiGe TBH est présenté en se basant sur le modèle compact récent HICUMversion L2.3x. Grâce aux lois d’échelle introduites et basées sur le dessin même des dimensions du transistor, une simulation précise du comportement électrique et thermique a pu être démontrée.Ceci a été rendu possible grâce à l’utilisation et à l’amélioration des routines et méthodes d’extraction des paramètres du modèle. C’est particulièrement le cas pour la détermination des éléments parasites extrinsèques (résistances et capacités) ainsi que celle du transistor intrinsèque. Finalement, les différentes étapes d’extraction et les méthodes sont présentées, et ont été vérifiées par l’extraction de bibliothèques SPICE sur le TBH NPN Haute-Vitesse de la technologie BiCMOS avancée du noeud 55nm, avec des fréquences de fonctionnement atteignant 320/370GHz de fT = fmax
The aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology
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Sarkar, Manju. "Lambda Bipolar Transistor (LBT) in Static Random Access Memory Cell". Thesis, Indian Institute of Science, 1995. https://etd.iisc.ac.in/handle/2005/124.

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With a view to reduce the number of components in a Static Random Access Memory (SRAM) cell, the feasibility of use of Lambda Bipolar Transistor (LBT)in the bistable element of the cell has been explored under the present study. The LBT under consideration here comprises of an enhancement mode MOSFET integrated with a parasitic bipolar transistor so as to perform as a negative resistance device. LBTs for the study have been fabricated and analysed. The devices have been shown to function at much lower voltage and current levels than those reported earlier/ and thus have been shown to be suitable for lower power applications. The issues of agreements and discrepancies of the experimental results with the original DC model of the device have been highlighted and discussed. The factors contributing to the drain current of the MOSFET in the LBT have been identified. It has also been shown that in the real case of an LBT in operation, the MOSFET in it does not function as a discrete device for the same conditions of voltages and current levels as in an LBT. As per the present study, it is assessed to be influenced by the presence of the BJT in operation and this effect is felt more at the lower current levels of operation. With a separate and tailored p-well implantation the possibility of fabrication of LBTs with a CMOS technology is established. Along with a couple of polysilicon resistors, the LBTs have been successfully made to perform in the common-collector configuration as the bistable storage element of SRAM cell (as proposed in the literature). The bistable element with the LBT in common-emitter mode also has been visualised and practically achieved with the fabricated devices. The WRITE transients for either case have been simulated for various levels of WRITE voltages and their time of hold.The speed of Writing achieved are found comparable with that of the standard SRAMs. The advantages and disadvantages of using the LBT in either mode have been highlighted and discussed. The power consumption of the bistable element with the LBT in either mode is however shown to be the same. A different approach of READING has been proposed to overcome the factors known to increase the cycle time. On the whole, under the present study, the proposal of using LBTs in the bistable storage element of the SRAM cell has been shown to be feasible. Such SRAM circuits can find possible applications in the fields where smaller circuit area is the major concern.
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Libros sobre el tema "Bipolar model"

1

Alioto, Massimo y Gaetano Palumbo. Model and Design of Bipolar and MOS Current-Mode Logic. Boston, MA: Springer US, 2005. http://dx.doi.org/10.1007/1-4020-2888-1.

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1958-, Young L. Trevor y Joffe Russell T. 1954-, eds. Bipolar disorder: Biological models and their clinical application. New York: M. Dekker, 1997.

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Çilingiroğlu, Uğur. Systematic analysis of bipolar and MOS transistors. Boston: Artech House, 1993.

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Schröter, Michael. Compact hierarchical bipolar transistor modeling with hicum. Singapore: World Scientific, 2010.

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Kuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.

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Kuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.

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Physical InP-based HBT models for ultimate digital circuit optimization. Konstanz: Hartung-Gorre, 2006.

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8

Inc, AeroVironment y United States. National Aeronautics and Space Administration., eds. Development of a woven-grid quasi-bipolar battery: Phase I final report. [Washington, DC: National Aeronautics and Space Administration, 1998.

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D, Cressler John, ed. Measurement and modeling of silicon heterostructure devices. Boca Raton, FL: CRC Press, 2008.

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P, Soubrié, ed. Anxiety, depression, and mania. Basel: Karger, 1991.

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Capítulos de libros sobre el tema "Bipolar model"

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Schröter, Michael y Bertrand Ardouin. "The HiCuM Bipolar Transistor Model". En Compact Modeling, 231–67. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8614-3_8.

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Dykas, Paweł, Tomasz Tokarski y Rafał Wisła. "Bipolar growth models with investment flows". En The Solow Model of Economic Growth, 126–66. London: Routledge, 2022. http://dx.doi.org/10.4324/9781003323792-7.

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Lefebvre, Vladimir A. "A Boolean Model of Bipolar Choice". En Algebra of Conscience, 165–73. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-0691-9_21.

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Pavuluri, Mani N. y Soujanya Bogarapu. "Brain Model for Pediatric Bipolar Disorder". En Biological Child Psychiatry, 39–52. Basel: KARGER, 2008. http://dx.doi.org/10.1159/000118515.

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Post, Robert M. "The Kindling/Sensitization Model and Early Life Stress". En Bipolar Disorder: From Neuroscience to Treatment, 255–75. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/7854_2020_172.

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Tzeng, Gwo-Hshiung. "Hybrid Bipolar MRDM Model For Business Analytics". En New Concepts and Trends of Hybrid Multiple Criteria Decision Making, 289–308. New York : CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315166650-20.

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Cabrit, Sylvie y Claude Bertout. "A Model of Molecular Emission in Bipolar Flows". En Circumstellar Matter, 89–92. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3887-8_19.

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Smith, Michael D. "A Model for Bipolar Sources in Molecular Clouds". En Light on Dark Matter, 319–20. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4672-9_71.

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Reznik, D. "Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors". En Simulation of Semiconductor Devices and Processes, 254–57. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_61.

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Tang, Yongchuan y Jonathan Lawry. "Bipolar Semantic Cells: An Interval Model for Linguistic Labels". En Lecture Notes in Computer Science, 60–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-24918-1_9.

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Actas de conferencias sobre el tema "Bipolar model"

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Doyen, L., X. Federspiel y D. Ney. "Improved Bipolar Electromigration Model". En 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251323.

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Liang, Lin y Petrosky. "A dynamic thermo-feedback model for bipolar transistor". En Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617508.

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Horak, Michal. "Double heterojunction bipolar phototransistor model". En Photonics, Devices, and Systems II, editado por Miroslav Hrabovsky, Dagmar Senderakova y Pavel Tomanek. SPIE, 2003. http://dx.doi.org/10.1117/12.498453.

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Ashton, James P., Stephen J. Moxim, Ashton D. Purcell, Patrick M. Lenahan y Jason T. Ryan. "Model for the Bipolar Amplification Effect". En 2021 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2021. http://dx.doi.org/10.1109/iirw53245.2021.9635616.

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Nakagawa, A., S. Nakamura y T. Shinohe. "Rapid Convergence Bipolar-MOS Composite Device Model - Tonadder- And Its Application To Bipolar-Mode MOSFETs(IGBT)". En [1987] NASECODE V: Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits. IEEE, 1987. http://dx.doi.org/10.1109/nascod.1987.721195.

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"Bayesian Prognostic Model for Genomic Discovery in Bipolar Disorder". En International Conference on Bioinformatics Models, Methods and Algorithms. SCITEPRESS - Science and and Technology Publications, 2014. http://dx.doi.org/10.5220/0004642100910098.

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LIOTTA, S. F. y G. MASCALI. "A HYDRODYNAMICAL MODEL FOR SILICON BIPOLAR DEVICES". En Proceedings of the 13th Conference on WASCOM 2005. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773616_0044.

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Nursuprianah, Indah, Nursanti Anggriani, Nuning Nuraini y Yudi Rosandi. "Dynamic analysis of bipolar disorder mathematical model". En THE 7TH INTERNATIONAL CONFERENCE ON BASIC SCIENCES 2021 (ICBS 2021). AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0112000.

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Scrobohaci, Joonwoo Nam y Ting-wei Tang. "A non-local hydrodynamic model for impact ionization in submicron silicon BJT's". En Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617460.

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Reaz Shaheed y Maziar. "A plasma-induced bandgap renormalization model for accurate simulation of advanced bipolar transistors". En Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617461.

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Informes sobre el tema "Bipolar model"

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Zimmerman, T. An approximate HSPICE model for orbit low noise analog bipolar NPN transistors. Office of Scientific and Technical Information (OSTI), julio de 1991. http://dx.doi.org/10.2172/5475545.

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Ovrebo, Gregory K. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model. Fort Belvoir, VA: Defense Technical Information Center, octubre de 2004. http://dx.doi.org/10.21236/ada428067.

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Liou, Chorng-Lii. An improved formulation of the temperature dependence of the Gummel-Poon bipolar transistor model equations. Portland State University Library, enero de 2000. http://dx.doi.org/10.15760/etd.6217.

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Wilk, Kacper, Ewelina Kowalewska, Maria Załuska y Michał Lew-Starowicz. The comparison of variuos models of community psychiatry – a systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, mayo de 2023. http://dx.doi.org/10.37766/inplasy2023.5.0094.

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Review question / Objective: Review aimed to determine the effectiveness of community mental health model on patients with psychological health symptoms. Intervention was compared by model used (Community mental health center, community mental health team, assertive community treatment and flexible assertive community treatment). Examined factor of effectiveness are reduction in severity of symptoms and hospitalizations, increase in the level of functioning and wellbeing, quality of life or recovery, and level of satisfaction from intervention. Condition being studied: Population of patients suffered from various conditions affecting their mental health. Most common symptoms were depressive, anxiety and psychotic disorders. Some specific disorders consisted of bipolar disorder, schizophrenic disorder, substance abuse disorder, and intellectual disabilities. Some articles focused on behavioral problems including criminal behavior.
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Wampler, William R. y Samuel Maxwell Myers. Carrier tunneling in models of irradiated heterojunction bipolar transistors. Office of Scientific and Technical Information (OSTI), agosto de 2014. http://dx.doi.org/10.2172/1171564.

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Campbell, Phillip y Steven Wix. Total dose and dose rate models for bipolar transistors in circuit simulation. Office of Scientific and Technical Information (OSTI), mayo de 2013. http://dx.doi.org/10.2172/1088097.

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