Literatura académica sobre el tema "Atomic-resolution TEM"
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Artículos de revistas sobre el tema "Atomic-resolution TEM"
Bell, David C., Christopher J. Russo y Dmitry V. Kolmykov. "40keV atomic resolution TEM". Ultramicroscopy 114 (marzo de 2012): 31–37. http://dx.doi.org/10.1016/j.ultramic.2011.12.001.
Texto completoYagi, K., H. Sato, K. Kobayashi, Y. Nishiyama y Y. Tanaka. "TEM study of Si surfaces". Proceedings, annual meeting, Electron Microscopy Society of America 50, n.º 1 (agosto de 1992): 280–81. http://dx.doi.org/10.1017/s0424820100121806.
Texto completoLee, Yangjin, Jun-Yeong Yoon, Hu Young Jeong y Kwanpyo Kim. "Atomic-Resolution TEM Imaging of Phosphorene Protected by Graphene". Microscopy and Microanalysis 25, S2 (agosto de 2019): 1696–97. http://dx.doi.org/10.1017/s1431927619009218.
Texto completoHashimoto, Hatsujiro. "Contribution of Atomic-Level TEM to Resolution of Structure". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 1 (12 de agosto de 1990): 4–5. http://dx.doi.org/10.1017/s042482010017877x.
Texto completoCochrane, Heather D., John L. Hutchison y Donald White. "Surface studies of catalytic ceria using atomic-resolution tem". Ultramicroscopy 31, n.º 1 (septiembre de 1989): 138–42. http://dx.doi.org/10.1016/0304-3991(89)90044-2.
Texto completoKrakow, William, David P. Divincenzo, Peter A. Bancel, Eric Cockayne y Veit Elser. "High-resolution TEM of Al-Cu-Fe quasicrystals". Proceedings, annual meeting, Electron Microscopy Society of America 50, n.º 1 (agosto de 1992): 118–19. http://dx.doi.org/10.1017/s0424820100120990.
Texto completoZhang, Xiao Feng y Takeo Kamino. "Imaging Gas-Solid Interactions in an Atomic Resolution Environmental TEM". Microscopy Today 14, n.º 5 (septiembre de 2006): 16–19. http://dx.doi.org/10.1017/s1551929500058600.
Texto completoKujawa, S., B. Freitag y D. Hubert. "An Aberration Corrected (S)TEM Microscope for Nanoresearch". Microscopy Today 13, n.º 4 (julio de 2005): 16–21. http://dx.doi.org/10.1017/s1551929500053608.
Texto completoZhang, Xiao Feng. "Enabling Lab-in-Gap Transmission Electron Microscopy at Atomic Resolution". Microscopy Today 24, n.º 1 (enero de 2016): 24–29. http://dx.doi.org/10.1017/s1551929515000930.
Texto completoHasegawa, Tsuyoshi, Kunio Kobayashi, Nobuyuki Ikarashi, Kunio Takayanagi y Katsumichi Yagi. "Atomic Resolution TEM Images of the Au(001) Reconstructed Surface". Japanese Journal of Applied Physics 25, Part 2, No. 5 (20 de mayo de 1986): L366—L368. http://dx.doi.org/10.1143/jjap.25.l366.
Texto completoTesis sobre el tema "Atomic-resolution TEM"
Cochrane, Heather Dunlop. "Surface studies of catalytic cerias using atomic resolution TEM". Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.276508.
Texto completoHe, Kuang. "Synthesis and atomic resolution AC-TEM characterisation of graphene edges". Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:32b4ea72-5a60-4c1f-9d93-9d9fe1cc4382.
Texto completoLi, Siqian. "The atomic struture of inversion domains and grain boundaries in wurtzite semonconductors : an investigation by atomistic modelling and high resolution transmission electron microscopy". Thesis, Normandie, 2018. http://www.theses.fr/2018NORMC252/document.
Texto completoIn this work, we investigated two kinds of interfacial defects: inversion domain boundaries (IDBs) and grain boundaries (GB) in wurtzite semiconductors (III-nitrides, ZnO and ZnO/GaN heterostructure) using high-resolution TEM and first-principle calculations. For IDBs, theoretical calculation indicated that a head-to-head IDB with an interfacial stacking sequence of AaBbAa-AcCaA (H4) is the most stable structure in wurtzite compounds. Moreover, 2-dimensional electron gas (2DEG) and 2-dimensional hole gas (2DHG) build up in head-to-head and tail-to-tail IDBs, respectively. Considering the IDB at the ZnO/GaN heterointerface, TEM observations unveiled the H4 configuration with a -Zn-O-Ga-N interface. Moreover the theoretical investigation also confirmed stability of this interface along with the corresponding formation of a 2DHG. A detailed topological, TEM and theoretical investigation of [0001] tilt Grain Boundaries (GBs) in wurtzite symmetry has also been carried out. In GaN, it is shown that the GBs are only made of separated a edge dislocations with 4, 5/7 and 8 atoms rings. For ZnO, a new structural unit: the [101 ̅0] edge dislocation made of connected 6-8-4-atom rings is reported for the first time, in agreement with an early theoretical report on dislocations and jogs in the wurtzite symmetry
Bacia, Maria. "Comportement du carbone aux joints de grains du molybdène". Grenoble INPG, 1994. http://www.theses.fr/1994INPG4210.
Texto completoSun, Xingsheng. "A Computational Framework for Long-Term Atomistic Analysis of Solute Diffusion in Nanomaterials". Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/85242.
Texto completoPh. D.
Interstitial diffusion in crystalline solids describes a phenomenon in which the solute constituents (e.g., atoms) move from an interstitial space of the host lattice to a neighboring one that is empty. It is a dominating feature in many important engineering applications, such as metal hydrides, lithium-ion batteries and hydrogen-induced material failures. These applications involve some key problems that might take place over long time periods (e.g., longer than 1 s), while the nanoscale behaviors and mechanisms become significant. The time scale of these problems is beyond the capability of established atomistic models, e.g., accelerated Molecular Dynamics and on-the-fly kinetic Monte Carlo. To this end, this dissertation presents the development and application of a new computational framework, referred to as Diffusive Molecular Dynamics (DMD), for the simulation of long-term interstitial solute diffusion in advanced nanomaterials. The framework includes three key components. Firstly, a DMD computational model is proposed, which accounts for three-dimensional, deformation-diffusion coupled analysis of interstitial solute mass transport. Secondly, nu- merical methods are employed to accelerate the DMD simulations while maintaining a high solution accuracy. Thirdly, a high-performance computational solver is developed to implement the DMD model and the numerical methods. Moreover, regarding its application, the DMD framework is first validated and assessed in the numerical experiments pertaining to hydrogen mass transport in palladium crystals. Then, it is employed to investigate the atomic behaviors and mechanisms involved in the long-term hydrogen absorption by palladium nanoparticles with different sizes and shapes. The two-way interaction between hydrogen absorption and lattice deformation is studied in detail.
Bansal, Ujjval. "Development of a coarsening resistant microstructure in precipitation strengthened aluminium alloys with Zr, Ta and Hf". Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5237.
Texto completoCapítulos de libros sobre el tema "Atomic-resolution TEM"
Tochigi, Eita, Bin Miao, Shun Kondo, Naoya Shibata y Yuichi Ikuhara. "TEM Characterization of Lattice Defects Associated with Deformation and Fracture in α-Al2O3". En The Plaston Concept, 133–56. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7715-1_7.
Texto completoHarano, Koji y Eiichi Nakamura. "Conformational Analysis of Organic Molecules with Single-Molecule Atomic-Resolution Real-Time Transmission Electron Microscopy (SMART-TEM) Imaging". En Molecular Technology, 339–68. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527823987.vol4_c12.
Texto completoSchmidt-Böcking, H., S. Eckart, H. J. Lüdde, G. Gruber y T. Jahnke. "The Precision Limits in a Single-Event Quantum Measurement of Electron Momentum and Position". En Molecular Beams in Physics and Chemistry, 223–45. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63963-1_12.
Texto completoKrishnan, Kannan M. "Transmission and Analytical Electron Microscopy". En Principles of Materials Characterization and Metrology, 552–692. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0009.
Texto completoUeda, O., Y. Sakuma, M. Ozeki, N. Ohtsuka y K. Nakajima. "High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy". En Control of Semiconductor Interfaces, 531–36. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50097-3.
Texto completoKrishnan, Kannan M. "Scanning Electron Microscopy". En Principles of Materials Characterization and Metrology, 693–744. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0010.
Texto completoActas de conferencias sobre el tema "Atomic-resolution TEM"
Hubbard, William A., Ho Leung Chan y B. C. Regan. "High-Resolution Conductivity Mapping with STEM EBIC". En ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0251.
Texto completoGai, Pratibha. "Atoms in action for energy, healthcare and environment using in-situ atomic resolution environmental (S)TEM". En European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.506.
Texto completode Knoop, Ludvig. "Electric Field-Induced Surface Melting of Gold at Room Temperature visualized at Atomic Resolution Using In Situ TEM". En European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1421.
Texto completoNguyen, Tai D., Michael A. O'Keefe, Roar Kilaas, Ronald Gronsky y Jeffrey B. Kortright. "Effects of Fresnel Fringes on TEM Images of Interfaces in X-Ray Multilayers". En Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.tub2.
Texto completoDemarest, James y John Bruley. "Quantitative SiGe TEM Elemental Analysis in FinFET Test Structures". En ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0120.
Texto completoWang, Qi, L. Knight y J. Thorne. "Imaging Cross Section Of X-ray Multilayer By STM". En Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.wc.5.
Texto completoLund, Mark W. "High reflectivity x-ray multilayers using reactive ion sputtering". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tuee6.
Texto completoChang, Chih-Chung, Jian-Chang Lin, Wen-Sheng Wu, Chih-Ying Tasi y Ching-Lin Chang. "A Novel Technique of Device Measurement after Cross-Sectional FIB in Failure Analysis". En ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0230.
Texto completoVahdat, Vahid, David S. Grierson, Kevin T. Turner y Robert W. Carpick. "Nano-Scale Forces, Stresses, and Tip Geometry Evolution of Amplitude Modulation Atomic Force Microscopy Probes". En ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-48653.
Texto completoWest, Paul y Natasha Starostina. "AFM Capabilities in Characterization of Particle Nanocomposites: From Angstroms to Microns". En ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17020.
Texto completoInformes sobre el tema "Atomic-resolution TEM"
Or, Dani, Shmulik Friedman y Jeanette Norton. Physical processes affecting microbial habitats and activity in unsaturated agricultural soils. United States Department of Agriculture, octubre de 2002. http://dx.doi.org/10.32747/2002.7587239.bard.
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