Literatura académica sobre el tema "Anderson-Mott transition"
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Artículos de revistas sobre el tema "Anderson-Mott transition"
Belitz, D. y T. R. Kirkpatrick. "The Anderson-Mott transition". Reviews of Modern Physics 66, n.º 2 (1 de abril de 1994): 261–380. http://dx.doi.org/10.1103/revmodphys.66.261.
Texto completoLadieu, F., M. Sanquer y J. P. Bouchaud. "Depinning transition in Mott-Anderson insulators". Physical Review B 53, n.º 3 (15 de enero de 1996): 973–76. http://dx.doi.org/10.1103/physrevb.53.973.
Texto completoDobrosavljević, V. "TYPICAL-MEDIUM THEORY OF MOTT–ANDERSON LOCALIZATION". International Journal of Modern Physics B 24, n.º 12n13 (20 de mayo de 2010): 1680–726. http://dx.doi.org/10.1142/s0217979210064563.
Texto completoAguiar, M. C. O., V. Dobrosavljević, E. Abrahams y G. Kotliar. "Disorder screening near the Mott–Anderson transition". Physica B: Condensed Matter 403, n.º 5-9 (abril de 2008): 1417–19. http://dx.doi.org/10.1016/j.physb.2007.10.213.
Texto completoDobrosavljević, V. y G. Kotliar. "Mean Field Theory of the Mott-Anderson Transition". Physical Review Letters 78, n.º 20 (19 de mayo de 1997): 3943–46. http://dx.doi.org/10.1103/physrevlett.78.3943.
Texto completoBelitz, D. y T. R. Kirkpatrick. "Order parameter description of the Anderson-Mott transition". Zeitschrift f�r Physik B Condensed Matter 98, n.º 4 (diciembre de 1995): 513–26. http://dx.doi.org/10.1007/bf01320853.
Texto completoBelitz, D. y T. R. Kirkpatrick. "Anderson-Mott transition as a quantum-glass problem". Physical Review B 52, n.º 19 (15 de noviembre de 1995): 13922–35. http://dx.doi.org/10.1103/physrevb.52.13922.
Texto completoKirkpatrick, T. R. y D. Belitz. "Anderson-Mott Transition as a Random-Field Problem". Physical Review Letters 74, n.º 7 (13 de febrero de 1995): 1178–81. http://dx.doi.org/10.1103/physrevlett.74.1178.
Texto completoSHANKAR, R. "SOLVABLE MODEL OF A METAL-INSULATOR TRANSITION". International Journal of Modern Physics B 04, n.º 15n16 (diciembre de 1990): 2371–94. http://dx.doi.org/10.1142/s0217979290001121.
Texto completoBelitz, D. y T. R. Kirkpatrick. "Anderson-Mott transition in a magnetic field: Corrections to scaling". Physical Review B 62, n.º 3 (15 de julio de 2000): 1655–59. http://dx.doi.org/10.1103/physrevb.62.1655.
Texto completoTesis sobre el tema "Anderson-Mott transition"
Pai, R. V., A. Punnoose y R. A. Römer. "The Mott-Anderson transition in the disordered one-dimensional Hubbard model". Universitätsbibliothek Chemnitz, 1998. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-199801405.
Texto completoSordi, Giovanni. "Mott-Hubbard transition in strongly correlated electron systems". Paris 11, 2008. http://www.theses.fr/2008PA112160.
Texto completoI study the Mott metal-insulator transition within the dynamical mean-field theory in two schematic Hamiltonians widely used to describe the strongly correlated electron systems : the Hubbard model and the periodic Anderson model. The scenario for the transition in the Hubbard model is reviewed and the analysis of the photoemission spectra near the transition is presented in detail. The doping driven Mott transition in the periodic Anderson model is discussed with respect to the one realized in the Hubbard model. The main finding is a qualitatively different scenario for electron or hole driven transitions. In the former case the transition is expectedly similar to the first order transition of the Hubbard model. However, in the latter case, a second order transition is found. Thus I demonstrate that the transition scenario of the Hubbard model is not generic for the periodic Anderson model
Pezzoli, Maria Elisabetta. "Disorder and Interaction: ground state properties of the disordered Hubbard model". Doctoral thesis, SISSA, 2008. http://hdl.handle.net/20.500.11767/4178.
Texto completoMoutaabbid, Hicham. "Localisation et corrélations électroniques en deux dimensions dans des nouvelles phases dérivées de 1T-VS2". Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066506/document.
Texto completoThis thesis work aims at studying the stability of the metallic and insulating phases that compete in the two-dimensional 1T-VS2 system and related compounds, Cu⅔V⅓V2S4, and Sr3V5S11. We have developed and optimized ad hoc high-pressure synthesis routes in order to stabilize the above novel phases in the form of high-quality single crystals, which enabled us to reliably investigate their electronic and transport properties. An important achievement of our study is the control of the concentration, x, of interstitial V atoms located between adjacent VS2 planes in the V1+xS2 system, which is obtained by varying synthesis pressure. This has enabled us to explore the T-x phase diagram of the system. The main result of this study is that the CDW phase observed in the stoichiometric (x=0) phase quickly disappears with x, whilst the metallic properties are enhanced. In Cu⅔V⅓V2S4, the partial substitution of V for Cu in the interstitial site is found to completely change the system into a semi-heavy fermion with pronounced Fermi-liquid characteristics down to ~20 K, where a Kondo transition occurs. These unexpected phenomena in sulfides suggest that the strength of the electronic correlations in these compounds can be tuned by simply varying the chemical nature and concentration of the intercalant atom. The moderate strength of the correlations in Cu⅔V⅓V2S4 opens the way towards a reliable theoretical description of the breakdown of the Fermi liquid regime. Electronic correlations appear to be important also to drive an insulating phase in Sr3V5S11, which should be a metal within a conventional band picture. In this case, the correlations may be enhanced by the reduced dimensionality caused by a large spacing between VS2 layers and by a 1D structural modulation of the layers. Further studies may clarify whether the Anderson’s mechanism of weak localization contributes to the stabilization of an insulating state in the pristine metallic VS2 planes
Capítulos de libros sobre el tema "Anderson-Mott transition"
Jaroszyński, J., T. Dietl, M. Sawicki, T. Wojtowicz y W. Plesiewicz. "Critical Behavior of the Hall Coefficient and Dielectric Susceptibility near the Anderson-Mott Transition in p-Hg1−xMnxTe". En High Magnetic Fields in Semiconductor Physics II, 514–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_78.
Texto completoPollak, M. y L. Friedman. "An Alternative Theory for Thermoelectric Power in Anderson-Mott Insulators". En Localization and Metal-Insulator Transitions, 347–54. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_28.
Texto completoByczuk, Krzysztof, Walter Hofstetter y Dieter Vollhardty. "ANDERSON LOCALIZATION VS. MOTT–HUBBARD METAL–INSULATOR TRANSITION IN DISORDERED, INTERACTING LATTICE FERMION SYSTEMS". En 50 Years of Anderson Localization, 473–501. WORLD SCIENTIFIC, 2010. http://dx.doi.org/10.1142/9789814299084_0020.
Texto completoActas de conferencias sobre el tema "Anderson-Mott transition"
Muller, Jens, Robert Rommel y Takahiko Sasaki. "Charge-carrier dynamics near the Mott-Anderson transition in molecular conductors". En 2015 International Conference on Noise and Fluctuations (ICNF). IEEE, 2015. http://dx.doi.org/10.1109/icnf.2015.7288537.
Texto completoFabrizio, Michele. "What can be learned about the Mott transition from the physics of Anderson impurities". En LECTURES ON THE PHYSICS OF STRONGLY CORRELATED SYSTEMS XI: Eleventh Training Course in the Physics of Strongly Correlated Systems. AIP, 2007. http://dx.doi.org/10.1063/1.2751989.
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