Literatura académica sobre el tema "Amorphous-amorphous interfaces"
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Artículos de revistas sobre el tema "Amorphous-amorphous interfaces"
Huang, L., Z. Q. Chen, W. B. Liu, P. Huang, X. K. Meng, K. W. Xu, F. Wang y T. J. Lu. "Enhanced irradiation resistance of amorphous alloys by introducing amorphous/amorphous interfaces". Intermetallics 107 (abril de 2019): 39–46. http://dx.doi.org/10.1016/j.intermet.2019.01.007.
Texto completoChu, V., M. Fang y B. Drevillon. "Insituellipsometric study of amorphous silicon/amorphous silicon‐carbon interfaces". Journal of Applied Physics 69, n.º 5 (marzo de 1991): 3363–65. http://dx.doi.org/10.1063/1.348534.
Texto completoWei, Shaosheng, Xiaohua Yu y Dehong Lu. "First-Principles Calculation of the Bonding Strength of the Al2O3-Fe Interface Enhanced by Amorphous Na2SiO3". Materials 15, n.º 13 (22 de junio de 2022): 4415. http://dx.doi.org/10.3390/ma15134415.
Texto completoCésari, C., G. Nihoul, J. Marfaing, W. Marine y B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium". Surface Science Letters 162, n.º 1-3 (octubre de 1985): A613. http://dx.doi.org/10.1016/0167-2584(85)90329-9.
Texto completoCésari, C., G. Nihoul, J. Marfaing, W. Marine y B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium". Surface Science 162, n.º 1-3 (octubre de 1985): 724–30. http://dx.doi.org/10.1016/0039-6028(85)90972-0.
Texto completoCheng, Z. Y., Jing Zhu, X. H. Liu, Xi Wang y G. Q. Yang. "Microstructure of TiN films and interfaces formed by ion-beam-enhanced deposition and simple physical vapor deposition". Journal of Materials Research 10, n.º 4 (abril de 1995): 995–99. http://dx.doi.org/10.1557/jmr.1995.0995.
Texto completoRoy, M., P. Sengupta, A. K. Tyagi y G. B. Kale. "Investigations on Silicon/Amorphous-Carbon and Silicon/Nanocrystalline Palladium/Amorphous-Carbon Interfaces". Journal of Nanoscience and Nanotechnology 8, n.º 8 (1 de agosto de 2008): 4295–302. http://dx.doi.org/10.1166/jnn.2008.an37.
Texto completoHerth, S., H. Rösner, A. A. Rempel, H. E. Schaefer y R. Würschum. "Positrons as chemically sensitive probes in interfaces of multicomponent complex materials: Nanocrystalline Fe90Zr7B3". International Journal of Materials Research 94, n.º 10 (1 de octubre de 2003): 1073–78. http://dx.doi.org/10.1515/ijmr-2003-0196.
Texto completoHohensee, Gregory T., Mousumi M. Biswas, Ella Pek, Chris Lee, Min Zheng, Yingmin Wang y Chris Dames. "Pump-probe thermoreflectance measurements of critical interfaces for thermal management of HAMR heads". MRS Advances 2, n.º 58-59 (2017): 3627–36. http://dx.doi.org/10.1557/adv.2017.503.
Texto completoAvishai, Amir, Christina Scheu y Wayne D. Kaplan. "Amorphous Films at Metal/Ceramic Interfaces". Zeitschrift für Metallkunde 94, n.º 3 (marzo de 2003): 272–76. http://dx.doi.org/10.3139/146.030272.
Texto completoTesis sobre el tema "Amorphous-amorphous interfaces"
Kast, Matthew. "Towards Tunable and Multifunctional Interfaces: Multicomponent Amorphous Alloys and Bilayer Stacks". Thesis, University of Oregon, 2017. http://hdl.handle.net/1794/22288.
Texto completoHassanali, Ali. "WATER AT MOLECULAR INTERFACES: STRUCTURE AND DYNAMICS NEAR BIOMOLECULES AND AMORPHOUS SILICA". The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1275314943.
Texto completoMews, Mathias [Verfasser], Bernd [Gutachter] Rech, i. Cabarrocas Pere [Gutachter] Roca y Bernd [Gutachter] Szyszka. "Interfaces in amorphous/crystalline silicon heterojunction solar cells / Mathias Mews ; Gutachter: Bernd Rech, Pere Roca i Cabarrocas, Bernd Szyszka". Berlin : Technische Universität Berlin, 2016. http://d-nb.info/1156181437/34.
Texto completoRoss, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras". Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.
Texto completoLidbaum, Hans. "Transmission Electron Microscopy for Characterization of Structures, Interfaces and Magnetic Moments in Magnetic Thin Films and Multilayers". Doctoral thesis, Uppsala universitet, Experimentell fysik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-107941.
Texto completoFagas, Georgios. "Vibrational properties of complex solids". Thesis, Lancaster University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321898.
Texto completoVarache, Renaud. "Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells". Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112279/document.
Texto completoThe interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 °C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport
Luo, Haoming. "High frequency thermomechanical study of heterogeneous materials with interfaces". Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI130.
Texto completoHeat transfer is actually intimately related to the sound propagation (acoustic transfer) in materials, as in insulators and semi-conductors the main heat carriers are acoustic phonons. The concept of the presence of interfaces has been largely exploited for efficiently manipulating phonons from long-wavelength to nanometric wavelengths, i.e., frequencies in THz regime, responsible for thermal transport at room temperature. In this thesis, the finite element method is used to perform transient analysis of wavepacket propagation in different mediums. I started with a parametric study of attenuation of acoustic wave-packets in a 2D semi-infinite elastic system with periodic circular interfaces. Three key parameters are investigated, including rigidity contrast, interface density and phonon wavelength. Different energy transfer regimes (propagative, diffusive, and localized) are identified allowing to understand the phonon contribution to thermal transport. Besides the circular interfaces, mechanical response and acoustic attenuation for different types of interfaces are also investigated, such as Eshelby’s inclusion, dendritic shape inclusion and porous materials with ordered/disordered holes. In order to extend the study to amorphous materials, I also considered a heterogeneous medium with random rigidities distributed in space according to a Gaussian distribution based on the theory of heterogeneous shear elasticity of glasses. Finally yet importantly, viscoelastic constitutive laws are proposed to take into account the frequency-dependent intrinsic phonon attenuation in glasses, with the aim of reproducing such intrinsic attenuation using a homogeneous viscous medium. Finite element simulation confirms that a continuum model may strictly follow the atomistic attenuation (G) for a well-calibrated macroscopic linear viscoelastic constitutive law. Compared with the experimental data in a-SiO2, our second constitutive law reproduces qualitatively and quantitatively the three regimes of acoustic attenuation versus frequency : successively Γ∝ω^2,ω^4,ω^2
Zhu, Kai Schiff Eric A. "Interface modulation spectroscopy and doping physics in amorphous silicon". Related Electronic Resource: Current Research at SU : database of SU dissertations, recent titles available full text, 2003. http://wwwlib.umi.com/cr/syr/main.
Texto completoGandy, Amy S. "A Transmission Electron Microscopy study of the Interaction between Defects in Amorphous Silicon and a Moving Crystalline/Amorphous Interface". Thesis, University of Salford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502784.
Texto completoLibros sobre el tema "Amorphous-amorphous interfaces"
Wilfried G. J. H. M. Sark. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.
Buscar texto completoSukirno. Ion beam induced interface motion and impurity relocation in amorphous layers on SI. Salford: University of Salford, 1991.
Buscar texto completoCapítulos de libros sobre el tema "Amorphous-amorphous interfaces"
Blank-Bewersdorff, Margret, Uwe Köster y Gabriele Bewernick. "Metallic Amorphous/Crystalline Interfaces". En Controlled Interphases in Composite Materials, 667–75. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-7816-7_61.
Texto completoHerman, Frank y Philippe Lambin. "Interfaces Between Crystalline and Amorphous Tetrahedrally Coordinated Semiconductors". En Tetrahedrally-Bonded Amorphous Semiconductors, 469–82. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5361-2_40.
Texto completoChakraverty, B. K. "Dislocation Mediated Pseudo-Melting at Silicon-Metal Interfaces". En Physical Properties of Amorphous Materials, 261–75. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-2260-1_8.
Texto completoSchlapbach, Louis. "Hydrogen at Metallic Surfaces and Interfaces". En Hydrogen in Disordered and Amorphous Solids, 397–421. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4899-2025-6_33.
Texto completoTosi, M. P. "Liquid Surfaces and Solid-Liquid Interfaces". En Amorphous Solids and the Liquid State, 125–56. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4757-9156-3_5.
Texto completoRavindra, N. M., D. Fathy, O. W. Holland y J. Narayan. "Si — SiO2 Interfaces — a Hrtem Study". En The Physics and Technology of Amorphous SiO2, 279–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_38.
Texto completoNovio, Fernando y Daniel Ruiz-Molina. "Coordination Polymers for Medical Applications: Amorphous versus Crystalline Materials". En Hybrid Organic-Inorganic Interfaces, 661–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527807130.ch15.
Texto completoWool, R. P. "Strength and Entanglement Development at Amorphous Polymer Interfaces". En The IMA Volumes in Mathematics and Its Applications, 169–87. New York, NY: Springer New York, 1987. http://dx.doi.org/10.1007/978-1-4612-1064-1_10.
Texto completoHorbach, J., T. Stühn, C. Mischler, W. Kob y K. Binder. "Amorphous Silica at Surfaces and Interfaces: Simulation Studies". En High Performance Computing in Science and Engineering ’03, 167–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55876-4_13.
Texto completoJhon, Mu Shik y Youngie Oh. "Interfacial Tensions at Amorphous High Polymer-Water Interfaces: Theory". En Surface and Interfacial Aspects of Biomedical Polymers, 395–420. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_11.
Texto completoActas de conferencias sobre el tema "Amorphous-amorphous interfaces"
Malyska, K., Ali Erdemir, Sergey A. Chizhik, Zygmunt Rymuza y Lukasz Ratajczyk. "Amorphous Carbon Thin Films for Interfaces in MEMS". En World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63147.
Texto completoCaputo, D., G. de Cesare, C. Manetti, A. Nascetti y R. Scipinotti. "Chromatographic System Based on Amorphous Silicon Photodiodes". En 2nd IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2007. IEEE, 2007. http://dx.doi.org/10.1109/iwasi.2007.4420008.
Texto completoRoy, Ajit K., V. Varshney, S. Ganguli, S. Sihn, J. Lee y B. Farmer. "Atomistic Scale Thermal Transport in Amorphous Materials and Its Interfaces". En ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44656.
Texto completoCaputo, D., G. de Cesare, A. Nascetti y R. Scipinotti. "Amorphous silicon balanced photodiode for application in biomolecular analysis". En 2009 3rd International Workshop on Advances in sensors and Interfaces. IEEE, 2009. http://dx.doi.org/10.1109/iwasi.2009.5184760.
Texto completoMilinović, V., K. Zhang, N. Bibić, K. P. Lieb, M. Milosavljević y P. K. Sahoo. "Ion Beam Mixing at Crystalline and Amorphous Fe/Si Interfaces". En THE PHYSICS OF IONIZED GASES: 23rd Summer School and International Symposium on the Physics of Ionized Gases; Invited Lectures, Topical Invited Lectures and Progress Reports. AIP, 2006. http://dx.doi.org/10.1063/1.2406030.
Texto completoNascetti, A., G. de Cesare y D. Caputo. "Large area hybrid detector technology based on amorphous silicon photosensors". En 2009 3rd International Workshop on Advances in sensors and Interfaces. IEEE, 2009. http://dx.doi.org/10.1109/iwasi.2009.5184763.
Texto completoPrice, Michael, Andrey Ovcharenko, Raj Thangaraj y Bart Raeymaekers. "Delamination of Ultra-Thin Diamond-Like Carbon Coatings on Magnetic Recording Heads Under Normal Loading". En ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2899.
Texto completoMenichelli, M., L. Antognini, A. Bashiri, M. Bizzarri, L. Calcagnile, M. Caprai, A. P. Caricato et al. "X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate". En 2023 9th International Workshop on Advances in Sensors and Interfaces (IWASI). IEEE, 2023. http://dx.doi.org/10.1109/iwasi58316.2023.10164611.
Texto completoMunson, Kyle y John B. Asbury. "Characterization of triplet separation and diffusion in amorphous pentacene films via ultrafast infrared spectroscopy". En Physical Chemistry of Semiconductor Materials and Interfaces XX, editado por Daniel Congreve, Christian Nielsen, Andrew J. Musser y Derya Baran. SPIE, 2021. http://dx.doi.org/10.1117/12.2594600.
Texto completode Cesare, Giampiero, Domenico Caputo y Augusto Nascetti. "Simultaneous measurement of light and temperature by a single amorphous silicon sensor". En 2015 6th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI). IEEE, 2015. http://dx.doi.org/10.1109/iwasi.2015.7184971.
Texto completoInformes sobre el tema "Amorphous-amorphous interfaces"
Carter, C. B. Crystalline-amorphous interfaces and their relation to grain boundary films. Office of Scientific and Technical Information (OSTI), febrero de 1992. http://dx.doi.org/10.2172/5738322.
Texto completoSchiff, E. A. Transport, Interfaces, and Modeling in Amorphous Silicon Based Solar Cells: Final Technical Report, 11 February 2002 - 30 September 2006. Office of Scientific and Technical Information (OSTI), octubre de 2008. http://dx.doi.org/10.2172/940635.
Texto completoCarter, C. B. Crystalline-amorphous interfaces and their relation to grain boundary films. A report for the 3-year period, 15 November 1988--14 November 1991. Office of Scientific and Technical Information (OSTI), febrero de 1992. http://dx.doi.org/10.2172/10131126.
Texto completoPisani, William, Dane Wedgeworth, Michael Roth, John Newman y Manoj Shukla. Exploration of two polymer nanocomposite structure-property relationships facilitated by molecular dynamics simulation and multiscale modeling. Engineer Research and Development Center (U.S.), marzo de 2023. http://dx.doi.org/10.21079/11681/46713.
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