Literatura académica sobre el tema "AlN/Si (111)"
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Artículos de revistas sobre el tema "AlN/Si (111)"
Бессолов, В. Н., Е. В. Коненкова, T. А. Орлова y С. Н. Родин. "Начальные стадии роста полуполярного AlN на наноструктурированной Si(100) подложке". Физика и техника полупроводников 55, n.º 10 (2021): 908. http://dx.doi.org/10.21883/ftp.2021.10.51442.41.
Texto completoKoryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov y Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates". Materials 15, n.º 18 (6 de septiembre de 2022): 6202. http://dx.doi.org/10.3390/ma15186202.
Texto completoIsshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki y Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations". Materials Science Forum 600-603 (septiembre de 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.
Texto completoPortail, Marc, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski et al. "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth". Crystals 12, n.º 11 (10 de noviembre de 2022): 1605. http://dx.doi.org/10.3390/cryst12111605.
Texto completoRiah, Badis, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag y Mohamed Abdou Djouadi. "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer". Coatings 11, n.º 9 (3 de septiembre de 2021): 1063. http://dx.doi.org/10.3390/coatings11091063.
Texto completoZhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak y Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.
Texto completoShubina, K. Yu, D. V. Mokhov, T. N. Berezovskaya, E. V. Pirogov, A. V. Nashchekin, Sh Sh Sharofidinov y A. M. Mizerov. "Separation of AlN layers from silicon substrates by KOH etching". Journal of Physics: Conference Series 2086, n.º 1 (1 de diciembre de 2021): 012037. http://dx.doi.org/10.1088/1742-6596/2086/1/012037.
Texto completoКукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова y В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si". Физика твердого тела 59, n.º 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.
Texto completoDagher, Roy, Rami Khazaka, Stephane Vézian, Monique Teissiere, Adrien Michon, Marcin Zielinski, Thierry Chassagne, Yvon Cordier y Marc Portail. "Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers". Materials Science Forum 821-823 (junio de 2015): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.1003.
Texto completoGoswami, Ramasis, Syed Qadri, Neeraj Nepal y Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures". Coatings 11, n.º 4 (20 de abril de 2021): 482. http://dx.doi.org/10.3390/coatings11040482.
Texto completoTesis sobre el tema "AlN/Si (111)"
Rouissi, Zied [Verfasser], Dieter [Akademischer Betreuer] Schmeißer, Ehrenfried [Akademischer Betreuer] Zschech y Christian [Akademischer Betreuer] Pettenkofer. "Role of substrates morphology and chemistry in ALD HfO₂ on Si(111)-H terminated surfaces as model / Zied Rouissi ; Dieter Schmeißer, Ehrenfried Zschech, Christian Pettenkofer". Cottbus : BTU Cottbus - Senftenberg, 2017. http://d-nb.info/1136904441/34.
Texto completoRouag, Nadjet. "Influence de la spécialité des joints de grains sur l'anisotropie de migration des joints entourant un grain (110) 001 en présence de précipités MnS et AiN au cours des premiers stades de la recristallisation secondaire dans des tôles de Fe-3% Si, en présence de précipités AiN et MnS". Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37618298m.
Texto completoRouag, Nadjet. "Influence de la texture cristallographique et de la spécialité des joints de grains sur l'anisotropie de migration des joints entourant un grain d'orientation (110)<001> au cours des premiers stades de la recristallisation secondaire dans les toles de Fe-3% SI en présence de précipités AIN et MnS". Paris 11, 1988. http://www.theses.fr/1988PA112364.
Texto completoZang, Keyan, Lianshan Wang, Soo-Jin Chua y Carl V. Thompson. "Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)". 2003. http://hdl.handle.net/1721.1/3841.
Texto completoSingapore-MIT Alliance (SMA)
Chandan, Greeshma K. "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy". Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4237.
Texto completoSu, P. C. y 蘇柏健. "Effect of mask pattern on the c-axis texture of AlN grown on Si(111)". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/22736a.
Texto completoMohan, Lokesh. "III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy". Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4297.
Texto completoPu, Jun-Liang y 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.
Texto completo崑山科技大學
電機工程研究所
91
In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
Chen, Chien-Hsun y 陳建勳. "Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15521410380206659047.
Texto completo國立清華大學
材料科學工程學系
94
A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of GaN is obtained for the SixNy mesh patterned Si(111) as the substrate. And better quality of GaN is achieved for smaller mesh size. The in-plane stress exhibits a U shape distribution across the “window” region, supported by the Raman shift of the GaN E2(TO) mode. This indicates a stress relaxation abruptly occurring near the edge of the “window” region due to the free standing surface (11-bar01) or (112-bar2). The in-plane stress is almost relaxed at the corner of the “window” region due to three free standing surfaces (11-bar01), (112-bar2), and (101-bar1). The maximum in-plane stress is located near the surface of the multilayers at the center of the “window” region, supported by the Raman measurements and the failure observations. The role of the SixNy mesh in the stress relaxation is discussed. The band gap shift in the 80 x 80 micrometer square crack-free GaN/AlN multilayers on the mesh patterned Si(111) was characterized by cathodoluminescence (CL) and Raman techniques. The GaN band gap derived from CL spectra depends on the spatial point inside a mesh, which changes from 3.413 eV (at center), to 3.418 eV (at edge), and to 3.426 eV (at corner). The band gap shift is attributed to the variation of tensile stress inside the mesh, confirmed by Raman mapping. The shift of GaN band gap per unit stress is determined to be 0.03 eV/GPa. Scanning photoelectron microscopy (SPEM) was applied to extract chemical images of the GaN/AlN multilayers within the mesh. The SPEM images study of the GaN/AlN multilayers on a mesh patterned Si(111) is dependent on the local charging. The V-defect on the surface of GaN can be observed by SPEM images and is determined to be Ga terminated surface.
Chowdhury, Arun Malla. "Self-powered Broadband and Ultrafast Photoresponse using InN and InGaN grown on AlN/Si (111) by Plasma-assisted Molecular Beam Epitaxy". Thesis, 2020. https://etd.iisc.ac.in/handle/2005/5411.
Texto completoLibros sobre el tema "AlN/Si (111)"
Jefferson, Thomas A., James G. Mead y Carl C. Kinze. Nomenclature of the Larger Toothed Whales (Odontocetes): A Historical Review. Washington, D.C.: Smithsonian Institution Scholarly Press, 2023. http://dx.doi.org/10.5479/si.21954029.
Texto completoBekunda, Mateete, Irmgard Hoeschle-Zeledon y Jonathan Odhong, eds. Sustainable agricultural intensification: a handbook for practitioners in East and Southern Africa. Wallingford: CABI, 2022. http://dx.doi.org/10.1079/9781800621602.0000.
Texto completoGariglio, S., M. S. Scheurer, J. Schmalian, A. M. R. V. L. Monteiro, S. Goswami y A. D. Caviglia. Surface and Interface Superconductivity. Editado por A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.7.
Texto completoAelenei, Laura. ADHD la adult. Interferente cu tulburarile de personalitate. Editura Universitara, 2021. http://dx.doi.org/10.5682/9786062812393.
Texto completoPacheco, Juan Carlos. Emociones para un nuevo mundo : con una reflexión sobre la educación a futuros docentes de primera infancia en la Universidad. Universidad Libre Sede Principal, 2022. http://dx.doi.org/10.18041/978-628-7580-11-4.
Texto completoMeyer, James. All I Worry about Is My Rottweiler and Like Maybe 3 Other People: 110 Game Sheets - SeaBattle Sea Battle Blank Games - Soft Cover Book for Kids for Traveling & Summer Vacations - Mini Game - Clever Kids - 110 Lined Pages - 6 X 9 in - 15. 24 X 22. 86 Cm - Si. Independently Published, 2019.
Buscar texto completoWiek, Till. Not All Good Looking People Are Celebrities, This One Here Is a Nurse: 110 Game Sheets - 660 Tic-Tac-Toe Blank Games - Soft Cover Book for Kids for Traveling & Summer Vacations - Mini Game - Clever Kids - 110 Lined Pages - 6 X 9 in - 15. 24 X 22. 86 Cm - Si. Independently Published, 2019.
Buscar texto completoBoletín de Precios Forestales, Junio 2019. INFOR, 2019. http://dx.doi.org/10.52904/20.500.12220/29151.
Texto completoNeffa, Julio César y Elena Margarita Denda, eds. Trabajo y salud de los no docentes de la UNLP. Editorial de la Universidad Nacional de La Plata (EDULP), 2017. http://dx.doi.org/10.35537/10915/62261.
Texto completoWatt, Gary. Equity & Trusts Law Directions. Oxford University Press, 2019. http://dx.doi.org/10.1093/he/9780198804703.001.0001.
Texto completoCapítulos de libros sobre el tema "AlN/Si (111)"
Carow-Watamura, U., D. V. Louzguine y A. Takeuchi. "Au-Ge-Si (101)". En Physical Properties of Ternary Amorphous Alloys. Part 1: Systems from Ag-Al-Ca to Au-Pd-Si, 368–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-03481-7_116.
Texto completoMalengreau, F., S. Hagège, R. Sporken, M. Vermeersch, R. Caudano y D. Imhoff. "Morphology and Microstructure of A1N Single Crystals on Si (111): A Combination of Surface Electron Spectroscopies and Transmission Electron Microscopies". En Ceramic Microstructures, 191–98. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_16.
Texto completoSchweitzer, George K. y Lester L. Pesterfield. "The Carbon Group". En The Aqueous Chemistry of the Elements. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195393354.003.0010.
Texto completoTallarico, Denise, Anouk Galtayries, Angelo Gobbi, Pedro Paulin Filho, Marcelo Maia Da Costa y Pedro Nascente. "SURFACE CHARACTERIZATION OF TIO2, NB2O5, AND ZRO2 THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING ON SI (111)". En Open Science Research XI, 1020–32. Editora Científica Digital, 2023. http://dx.doi.org/10.37885/230312367.
Texto completoMark, James E., Dale W. Schaefer y Gui Lin. "Introduction". En The Polysiloxanes. Oxford University Press, 2015. http://dx.doi.org/10.1093/oso/9780195181739.003.0003.
Texto completoMark, James E., Dale W. Schaefer y Gui Lin. "General Properties". En The Polysiloxanes. Oxford University Press, 2015. http://dx.doi.org/10.1093/oso/9780195181739.003.0007.
Texto completo"m na atg io n n if s i . edNw at hue ra nlphlaazcaerddsinre th su eltco in n te si xgtnioff ic d an ev telloosps in ogfn af aftliiocn te adl by drought request life and serious economic, environmental, and social sodes are conm ot m re upno it r y te odr . dTohnuorasgso istance from the inter impacts that greatly retard the development process. those that occurred in Austra s l , ias , eBvveerrendmr ents, these epi Figure 1.1 illustrates the trend of major natural dis England, the United States, and mra az niyl, ou o C th agnhatdsa , suS ch as asters between 1963 and 1992, expressed as the num in recent years are not included in these sta etriscto ic usnp tr aiiens , tboetraloafndniu sa a sters affecting 1 per cent or more of the . these disaste lrsgrboyss ty npaet , i o il n lu asltrparto in dgutcht. atFd ig ro u u re gh1t . , 2flroaondkss , aon cc dutrrro in p g ic d al ursitnogrm th siswpeerreiotdh . eTm he osCtefn re tr qeufeonrtRde isasters Drough in the Epidemiology of Disasters (Blaikie et al. s1e9a9 rc 4 h ) acfofm ec ptlienxtbiustc le onsidered by many to be the mo g more a st puenodpe le r sto th oadn of aan ll y na o tu th ra elr ha hzaazradsst , sgh ro ouwpnedthnaattutrhaeldniu sa m st beerrococfud rr reonucgehb ts y d in eccraedae and has (Hagman 1984). For example, in sub-Saharan Afri rd 62 in the 1960s to 237 during the 1980s. H se odwe fr voemr, t th oehdarvoeugahdtvseo rs fet ly heaefa fe rl cytetdommiodr -e 19t8h0asn ar 4e0 re m po il rltcead , tohneeseoff ig u th re esfm or osdtrouungdhet are misleading. Drought is people (Office of Foreign Disaster Assistance 199 ion because the sources of mos rtreopfotrhteesdesn ta attiu st riaclsad re is a in st teerrs Tmh il e li o1n99p1e -o 2plderoaungdhtre in su s lt oeudthienrnaAd fr eifciaciat ff oefc te cde02 ) 0 . national aid or donor organisations. Unless countries supplies of more than 6.7 million tonnes (SAD r C ea C l * = 1 % or more of total annual GNP". En Droughts, 34–35. Routledge, 2016. http://dx.doi.org/10.4324/9781315830896-25.
Texto completoActas de conferencias sobre el tema "AlN/Si (111)"
Hu, D. Z., R. Vöhringer, D. M. Schaadt, Jisoon Ihm y Hyeonsik Cheong. "Epitaxial growth of AlN films on Si (111)". En PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666344.
Texto completoMalin, T. V., V. G. Mansurov, Yu G. Galitsyn y K. S. Zhuravlev. "2D AlN layer formation on (111)Si surface by ammonia MBE". En 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2014. http://dx.doi.org/10.1109/3m-nano.2014.7057317.
Texto completoAkasaka, Tetsuya, Yasuyuki Kobayashi y Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers". En 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.
Texto completoYusoff, Mohd Zaki Mohd, Zainuriah Hassan, Azzafeerah Mahyuddin, Chin Che Woei, Anas Ahmad, Yushamdan Yusof y Mohd Bukhari Md Yunus. "Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE". En 2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA). IEEE, 2011. http://dx.doi.org/10.1109/isbeia.2011.6088879.
Texto completoYang, Tsung Hsi, Jet-Chung Chang, Jui Tai Ku, Shih-Guo Shen, Yi-Cheng Chen y Chun-Yen Chang. "Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure". En 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.f-1-6.
Texto completoYusoff, Mohd Zaki Mohd, Azzafeerah Mahyuddin, Zainuriah Hassan, Haslan Abu Hassan y Mat Johar Abdullah. "The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE". En 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732500.
Texto completoZhao, Yongmei, Guosheng Sun, Xingfang Liu, Jiaye Li, Wanshun Zhao, Lei Wang, Muchang Luo y Jinmin Li. "Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD". En 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306569.
Texto completoLumbantoruan, Franky, Yuan-Yee Wong, Yue-Han Wu, Wei-Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh y Edward Yi Chang. "Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD". En 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920785.
Texto completoXin Gao, Jinmin Li, Guosheng Sun, Nanhong Zhang, Lei Wang, Wanshun Zhao y Yiping Zeng. "Molecular beam epitaxial growth of GaN on 3C-SiC/Si(111) substrates using a thick AlN buffer layer". En 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511383.
Texto completoAli, Ahmad Hadi, Ahmad Shuhaimi y Zainuriah Hassan. "Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer". En 2012 IEEE 3rd International Conference on Photonics (ICP). IEEE, 2012. http://dx.doi.org/10.1109/icp.2012.6379837.
Texto completoInformes sobre el tema "AlN/Si (111)"
Vitkavage, Susan C., Eugene A. Irene y Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Fort Belvoir, VA: Defense Technical Information Center, diciembre de 1990. http://dx.doi.org/10.21236/ada231244.
Texto completoWong, Eric A. y Zehava Uni. Nutrition of the Developing Chick Embryo: Nutrient Uptake Systems of the Yolk Sac Membrane and Embryonic Intestine. United States Department of Agriculture, junio de 2012. http://dx.doi.org/10.32747/2012.7697119.bard.
Texto completoMiller, Sebastián J. BIDeconomics Chile: panorama de oportunidades. Inter-American Development Bank, abril de 2023. http://dx.doi.org/10.18235/0004860.
Texto completoTaylor, S., J. Lever, K. Burgess, R. Stroud, D. Brownlee, L. Nittler, A. Bardyn et al. Sampling interplanetary dust from Antarctic air. Engineer Research and Development Center (U.S.), febrero de 2022. http://dx.doi.org/10.21079/11681/43345.
Texto completoBonilla-Mejía, Leonardo, Luz A. Flórez, Didier Hermida, Francisco Lasso-Valderrama, Leonardo Fabio Morales y José Pulido. Estabilidad en el mercado laboral y análisis cuantitativo de algunos impactos del proyecto de ley de reforma laboral. Banco de la República, mayo de 2023. http://dx.doi.org/10.32468/rml.26.
Texto completoOcampo, José Antonio, Roberto Steiner Sampedro, Mauricio Villamizar Villegas, Bibiana Taboada Arango, Jaime Jaramillo Vallejo, Olga Lucia Acosta Navarro y Leonardo Villar Gómez. Informe de la Junta Directiva al Congreso de la República - Marzo de 2023. Banco de la República, marzo de 2023. http://dx.doi.org/10.32468/inf-jun-dir-con-rep.3-2023.
Texto completoAcosta, Diego y Jeremy Harris. Regímenes de política migratoria en América Latina y el Caribe: inmigración, libre movilidad regional, refugio y nacionalidad. Banco Interamericano de Desarrollo, julio de 2022. http://dx.doi.org/10.18235/0004362.
Texto completoEvaluación de los efectos e impactos de la tormenta tropical Eta y el huracán Iota en Honduras. Inter-American Development Bank, mayo de 2021. http://dx.doi.org/10.18235/0003310.
Texto completoInforme de Política Monetaria - Abril 2022. Banco de la República de Colombia, mayo de 2022. http://dx.doi.org/10.32468/inf-pol-mont-spa.tr2-2022.
Texto completoInforme de Política Monetaria - Octubre de 2021. Banco de la República, noviembre de 2021. http://dx.doi.org/10.32468/inf-pol-mont-spa.tr3-2021.
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