Artículos de revistas: "Accumulation de charge photoinduite"

1

Russo, Christopher J. y Richard Henderson. "Charge accumulation in electron cryomicroscopy". Ultramicroscopy 187 (abril de 2018): 43–49. http://dx.doi.org/10.1016/j.ultramic.2018.01.009.

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2

Olsson, L. Ö., C. B. M. Andersson, M. C. Håkansson, J. Kanski, L. Ilver y U. O. Karlsson. "Charge Accumulation at InAs Surfaces". Physical Review Letters 76, n.º 19 (6 de mayo de 1996): 3626–29. http://dx.doi.org/10.1103/physrevlett.76.3626.

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3

Gao, Mingze, Jiangkun Sun, Sheng Yu, Jun Feng, Xingjing Ren, Yongmeng Zhang, Xuezhong Wu y Dingbang Xiao. "Investigation of the Charge Accumulation Based on Stiffness Variation of the Micro-Shell Resonator Gyroscope". Micromachines 14, n.º 9 (8 de septiembre de 2023): 1755. http://dx.doi.org/10.3390/mi14091755.

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In capacitive microelectromechanical system (MEMS) devices, the application of dielectric materials causes long-term charging problems in the dielectric layers or substrates, which especially affect the repeatability and stability of high-performance devices. Due to the difficulties of observation and characterization of charge accumulation, an accurate characterization method is needed to study the effect of charge and propose suppression methods. In this paper, we analyze the influence of charge accumulation on the MSRG and propose a characterization method for charge accumulation based on stiffness variation. Experiments are carried out to characterize the charge accumulation in MSRG, and the effect of temperature on the process is also investigated. In the experiment, the charge accumulation is characterized accurately by the variation of the frequency split and stiffness axes. Furthermore, the acceleration of the charge accumulation is observed at high temperatures, as is the higher additional voltage from the charge accumulation.

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4

Bonn, Annabell G. y Oliver S. Wenger. "Photoinduced Charge Accumulation in Molecular Systems". CHIMIA International Journal for Chemistry 69, n.º 1 (25 de febrero de 2015): 17–21. http://dx.doi.org/10.2533/chimia.2015.17.

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5

Ireland, Peter M. "Contact charge accumulation and separation discharge". Journal of Electrostatics 67, n.º 2-3 (mayo de 2009): 462–67. http://dx.doi.org/10.1016/j.elstat.2009.01.014.

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6

Lai, Yundong, Hui Jiang, Yufei Han y Jinyu Tang. "Characteristics of Surface Charge Accumulation on Spacers and Its Influencing Factors". Electronics 13, n.º 7 (30 de marzo de 2024): 1294. http://dx.doi.org/10.3390/electronics13071294.

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Charge accumulation usually happens on the surface of spacers under DC operation, which is susceptible to inducing surface flashover. In order to explore the surface charge accumulation mechanisms and the influences of dielectric conductivity, gas ion mobility, and temperature field on the surface charges, a time-varying charge density model at the gas–solid interface of spacers was established. The results of the simulation show that the discontinuity of the current density between the spacer bulk side and the gas ion flow is the fundamental reason for the charge accumulation on the spacer surface. Additionally, the value of current density fluxes at the interface continues to decrease with the change of the electric field, and the progress of charge transfer gradually stabilizes. Moreover, the dielectric conductivity directly affects the charge accumulation process, and there is a critical conductivity in which the effect of charge conduction in dielectrics counteracts that of gas-phase charge deposition, theoretically. When the conductivity is higher than the critical conductivity, the solid-side charge conduction is the main source of the surface charge accumulation, while the gas-phase charge deposition on the gas side plays a dominant role when the conductivity is lower than the critical conductivity. The charge accumulation is not significantly affected by gas ion mobility when the temperature is evenly distributed. However, under the temperature field with gradient distribution, the current density fluxes at the interface change, causing the polarity reverse of the accumulated charge. In the high-temperature region, the volume current density surges simultaneously with the conductivity, leading to a higher density of surface charge accumulation. Lastly, the design of spacers needs to keep the current densities on both sides of the interface as similar as possible in order to avoid excessive charge gathering in localized areas.

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7

ZHANG, JIA-WEI, TIAN-HAO LI y WEI ZHANG. "SIMULATION OF SURFACE CHARGE DISSIPATION OF INSULATING BACKSHEETS FOR FLEXIBLE PHOTOVOLTAIC MODULE UNDER VARIOUS TEMPERATURE CONDITIONS". Surface Review and Letters 27, n.º 11 (8 de julio de 2020): 1950230. http://dx.doi.org/10.1142/s0218625x19502305.

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Because of excellent mechanical properties, thermal insulation and ideal radiation resistance, polyimide (PI) is one of the best choices as a flexible solar backsheet in photovoltaic systems. In this study, accumulation characteristics of surface charge of PI backsheet under temperature-controlled corona polarization were investigated both theoretically and experimentally. In order to investigate the surface charge accumulation of PI backsheet under the effect of different temperatures, finite element method (FEM) was used. The mechanisms by which the temperature influenced accumulation and decay processes of the surface charge of the PI backsheet were investigated. The results show that the carrier mobility of PI backsheet increased in the stages of charge accumulation and charge decay, which then has an indirect effect on the dynamic characteristics of the surface charge. Charge accumulation decreases with the increase of temperature, and both accumulation process and decay process occurred simultaneously. The results of this study provide theoretical support for the modification of PI backsheet. At the same time, a practical theoretical method for modeling and simulating the charge diffusion of insulating PI backsheet under the influence of temperature was explored.

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8

Wang, Wenqu, Yu Gao y Huicun Zhao. "The Effect of a Metal Particle on Surface Charge Accumulation Behavior of Epoxy Insulator with Zoning Coating". Energies 15, n.º 13 (28 de junio de 2022): 4730. http://dx.doi.org/10.3390/en15134730.

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Epoxy insulators are widely used in Gas-Insulated Transmission Lines (GILs), playing a significant role in electrical insulation and mechanical support. The metal particles generated during the production and operation of the equipment aggravate surface charge accumulation on the insulator, causing surface flashover. Therefore, it is necessary to study the suppression strategy of charge accumulation. In this paper, a downsized disc insulator was taken as the research object to investigate the effect of zoning coating on charge suppression with the presence of a linear aluminum metal particle under negative DC voltage. The zoning coating method was achieved by painting coatings with different conductivities in three areas on the insulator surface to regulate the charge. The inhibition mechanism of zoning coating on the charge accumulation in the presence of a linear metal particle was analyzed with the assistance of numerical simulation. The results showed that negative charges were accumulated in the nonplanar region as there was no metal particle, and the existence of metal particles led to the significant accumulation of positive charge speckles in the nonplanar region. The application of zoning coating could significantly inhibit the charge accumulation in the nonplanar area of the insulator and the charge injection from the grounded electrode to reduce the charge density. Under −25 kV, the maximum charge density on the insulator with the zoning coating was 48.1% lower than that without the coating, and the inhibition effect increased by 57.9% when the metal particle was introduced. This paper provides a new way to suppress the charge accumulation on the insulator surface.

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9

Liang, Fangwei, Hanhua Luo, Xianhao Fan, Xuetong Li y Xu Wang. "Review of Surface Charge Accumulation on Insulators in DC Gas-Insulated Power Transmission Lines: Measurement and Suppression Measures". Energies 16, n.º 16 (17 de agosto de 2023): 6027. http://dx.doi.org/10.3390/en16166027.

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Gas-insulated power transmission lines (GILs) can replace cables and overhead transmission lines, playing an important role in DC transmission systems. However, the influence of surface charge accumulation on insulation reliability cannot be ignored as the operational voltage of the DC GIL increases. In this paper, the measurement methods for the insulator surface potential are summarized, including, dust maps, the Pockels effect method, and the electrostatic probe method. Then, a typical surface charge inversion algorithm is introduced. The main influencing factors of surface charge accumulation are analyzed, such as the applied voltage, insulation gas, insulator shape, and temperature. The charge accumulation pathway is revealed. Furthermore, methods for inhibiting the accumulation of surface charges and promoting the dissipation of accumulated charges are introduced to reduce the surface charges on insulators. Finally, the development direction of DC GIL insulators is predicted. We anticipate that the online monitoring of surface charge distribution, clarifying the percentage of charge accumulation pathways, and optimizing the insulator casting process will be the research directions for the insulator surface charge topic in the future. This article provides a comprehensive understanding of the surface charges of GIL insulators and a reference for the insulation design of DC GILs.

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10

Shimakawa, Hajime, Akiko Kumada, Kunihiko Hidaka, Takanori Yasuoka, Yoshikazu Hoshina y Motoharu Shiiki. "Surface Charge Accumulation of DC-GIS Spacer". IEEJ Transactions on Power and Energy 140, n.º 6 (1 de junio de 2020): 548–49. http://dx.doi.org/10.1541/ieejpes.140.548.

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11

Gierus, A. V. y T. G. Gierus. "Charge accumulation effects in quantum-well structures". Semiconductors 40, n.º 6 (junio de 2006): 681–86. http://dx.doi.org/10.1134/s1063782606060133.

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12

Feng Wang, Yuchang Qiu, W. Pfeiffer y E. Kuffel. "Insulator surface charge accumulation under impulse voltage". IEEE Transactions on Dielectrics and Electrical Insulation 11, n.º 5 (octubre de 2004): 847–54. http://dx.doi.org/10.1109/tdei.2004.1349790.

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13

(George)Yu, Zhao-Zhi y Keith Watson. "Two-step model for contact charge accumulation". Journal of Electrostatics 51-52 (mayo de 2001): 313–18. http://dx.doi.org/10.1016/s0304-3886(01)00071-7.

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14

Garab, Gy, Zs Rozsa y Govindjee. "Carbon dioxide affects charge accumulation in leaves". Naturwissenschaften 75, n.º 10 (octubre de 1988): 517–19. http://dx.doi.org/10.1007/bf00361289.

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15

Jing, T., P. H. F. Morshuis y F. H. Kreuger. "Mechanisms of surface charge accumulation in SF6". Archiv für Elektrotechnik 77, n.º 2 (enero de 1994): 151–55. http://dx.doi.org/10.1007/bf01578538.

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16

Gu, Wenhao, Fei Teng, Yaozhu Chu, An Zhang y Zain Ul Abideen. "An interesting charge accumulation process of Bi12O15Cl6". Journal of Electroanalytical Chemistry 846 (agosto de 2019): 113169. http://dx.doi.org/10.1016/j.jelechem.2019.05.051.

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17

Boev, S. G. y V. A. Paderin. "Charge accumulation in dielectrics irradiated by protons". Soviet Physics Journal 30, n.º 5 (mayo de 1987): 425–29. http://dx.doi.org/10.1007/bf00900096.

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18

Gritsenko, N. I., I. N. Gulenko y N. V. Moshel'. "Charge transport and accumulation in liquid crystals". Soviet Physics Journal 32, n.º 7 (julio de 1989): 507–10. http://dx.doi.org/10.1007/bf00896120.

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19

Boyev, S. G. y A. P. Tyutnev. "Space charge accumulation in electron irradiated PMMA". Journal of Electrostatics 26, n.º 2 (agosto de 1991): 175–85. http://dx.doi.org/10.1016/0304-3886(91)90014-7.

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20

Jin, Rui, Xiaoyan Liu, Gang Du, Jinfeng Kang y Ruqi Han. "Effect of trapped charge accumulation on the retention of charge trapping memory". Journal of Semiconductors 31, n.º 12 (diciembre de 2010): 124016. http://dx.doi.org/10.1088/1674-4926/31/12/124016.

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21

Huan, Bai, Guangmao Li, Gang Du, Jun Xiong y Wenxiong Mo. "Effect of Semiconductive Layer on Space Charge Accumulation in XLPE". E3S Web of Conferences 204 (2020): 02004. http://dx.doi.org/10.1051/e3sconf/202020402004.

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Long time DC pressure on high voltage cables will lead to the accumulation of space charge in XLPE cables, thus endangering cable insulation. In order to study the effect of the thickness of semiconducting layer on the space charge in XLPE, the space charge in 10kV and 220kV XLPE sample with different thickness of semiconducting layer was measured and compared based on PEA method. Firstly, the samples were pressurized to the specified voltage, then kept this voltage for 30 minutes, then depressurized to 0, and lastly maintained for 90 minutes. The variation of space charge distribution during the pressurized stage was analyzed with the space charge density as the characteristic parameter. The results show that the space charge near the anode and cathode is accumulated by the semi-conductive coating during the period of maintaining pressure; the thicker the semi-conductive layer is, the more obvious the accumulation of space charge is; the longer the time of maintaining pressure, the more space charge accumulates.

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22

Li, Zhonglei, Jingang Su, Boxue Du, Zhaohao Hou y Chenlei Han. "Inhibition Effect of Graphene on Space Charge Injection and Accumulation in Low-Density Polyethylene". Nanomaterials 8, n.º 11 (20 de noviembre de 2018): 956. http://dx.doi.org/10.3390/nano8110956.

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Space charge injection and accumulation is attracting much attention in the field of dielectric insulation especially for electronic devices, power equipment and so on. This paper proposes using the inhibition effect of graphene for the injection and accumulation of space charge in low-density polyethylene (LDPE). Scanning electron microscope (SEM) and transmission electron microscopy (TEM) images were employed to observe the dispersion of graphene with a two-dimensional structure in LDPE. The time-dependent space charge dynamic behaviors of graphene/LDPE nanocomposites with the filler content of 0, 0.003, 0.005, 0.007 and 0.01 wt % were characterized by the pulsed electro-acoustic (PEA) test at 40, 60 and 80 °C, and the charge mobility was evaluated by its depolarization processes. The experimental results show that for the undoped LDPE film, large amounts of space charges were injected from the electrodes into samples, especially at 60 and 80 °C. The graphene/LDPE nanocomposites with a filler content of 0.005 wt % could markedly suppress the space charge injection and accumulation even at 80 °C, which is attributed to the large quantities of graphene-polymer in interface regions. These interface regions introduced numbers of deep trap sites within the forbidden band of nanocomposites, which can reduce the de-trapping rate of charges and suppress the space charge accumulation in the polymer bulks. The graphene/LDPE nanocomposites are suggested for dielectric applications, intending the inhibition of space charge injection and accumulation.

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23

Xing, Zhaoliang, Chong Zhang, Haozhe Cui, Yali Hai, Qingzhou Wu y Daomin Min. "Space Charge Accumulation and Decay in Dielectric Materials with Dual Discrete Traps". Applied Sciences 9, n.º 20 (11 de octubre de 2019): 4253. http://dx.doi.org/10.3390/app9204253.

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Charge trapping and de-trapping properties can affect space charge accumulation and electric field distortion behavior in polymers. Dielectric materials may contain different types of traps with different energy distributions, and it is of interest to investigate the charge trapping/de-trapping dynamic processes in dielectric materials containing multiple discrete trap centers. In the present work, we analyze the charge trapping/de-trapping dynamics in materials with two discrete traps in two cases where charges are injected continuously or only for a very short period. The time dependent trapped charge densities are obtained by the integration of parts in the case of continuous charge injection. In the case of instantaneous charge injection, we simplify the charge trapping/de-trapping equations and obtain the analytical solutions of trapped charge densities, quasi-free charge density, and effective carrier mobility. The analytical solutions are in good agreement with the numerical results. Then, the space charge dynamics in dielectric materials with two discrete trapping centers are studied by the bipolar charge transport (BCT) model, consisting of charge injection, charge migration, charge trapping, de-trapping, and recombination processes. The BCT outputs show the time evolution of spatial distributions of space charge densities. Moreover, we also achieve the charge densities at the same position in the sample as a function of time by the BCT model. It is found that the DC poling duration can affect the energy distribution of accumulated space charges. In addition, it is found that the coupling dynamic processes will establish a dynamic equilibrium rather than a thermodynamic equilibrium in the dielectric materials.

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24

Yan, Zhiyu, Hong Zhao, Baozhong Han, Jiaming Yang y Junqi Chen. "The suppression of space charge accumulation in CB/LDPE nanocomposites and its association with molecule relaxation". e-Polymers 18, n.º 1 (26 de enero de 2018): 49–56. http://dx.doi.org/10.1515/epoly-2017-0111.

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AbstractSpace charge accumulation within insulating material poses a threat to the reliability in the operation of DC power cables. To investigate the influence of carbon black (CB) on the space charge accumulation of low density polyethylene (LDPE), both conductive carbon black (C-CB) and insulating carbon black (I-CB) were employed as filler particles. The space charge distributions of LDPE and CB/LDPE nanocomposites were obtained by the pulsed electro-acoustic (PEA) method. Additionally, dynamic mechanical analysis (DMA) and thermally stimulated current (TSC) spectroscopy were applied to explore the mechanism of improving space charge performance. Both the C-CB/LDPE and I-CB/LDPE nanocomposites can effectively suppress space charge accumulation. It was concluded that the improvement in space charge characteristics of CB/LDPE nanocomposites was attributable to the interaction between the CB particles and the LDPE, which reduces the number of defects formed from molecules participating in α relaxation and decreases the density of traps within the LDPE.

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25

Zhao, Wei, Huaqiang Li, Wenpeng Li, Xin Chen, Lisheng Zhong y Jinghui Gao. "Charge Accumulation in the Homo-Crosslinked-Polyethylene Bilayer". Materials 15, n.º 9 (21 de abril de 2022): 3024. http://dx.doi.org/10.3390/ma15093024.

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The homo-crosslinked-polyethylene (H-XLPE) bilayer simplifies the returned insulation structure of the factory joint in submarine cables, and its dielectric property is key to the reliability of the power transmission system. In this paper, we investigated the charge accumulation phenomenon in a secondary thermocompression H-XLPE bilayer using the pulse electro-acoustic method. The charge accumulation reduces its overall breakdown strength when compared with XLPE. According to X-ray diffraction measurement and thermal analysis results, the specimen forms a homo-junction region between the bilayers, which has overlapping spherulites with a thick lamella, high crystallinity, and high surface free energy. The charge accumulation can be ascribed to fused lamellas and the crystal imperfection of the homo-junction region, which restricts the charge transport process and exhibits a higher number of deep traps. This study emphasizes the importance of the homo-junction region in the H-XLPE bilayer, which should be considered in the design and operation of factory joint insulation.

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26

Shimotani, Hidekazu, Haruhiko Asanuma, Jun Takeya y Yoshihiro Iwasa. "Electrolyte-gated charge accumulation in organic single crystals". Applied Physics Letters 89, n.º 20 (13 de noviembre de 2006): 203501. http://dx.doi.org/10.1063/1.2387884.

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27

Zhu, Feng, Haibo Wang, De Song, Kun Lou y Donghang Yan. "Charge transport in accumulation layers of organic heterojunctions". Applied Physics Letters 93, n.º 10 (8 de septiembre de 2008): 103308. http://dx.doi.org/10.1063/1.2980023.

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28

Olson, Carol L. y Ian Ballard. "Charge Accumulation and Polarization in Titanium Dioxide Electrodes". Journal of Physical Chemistry B 110, n.º 37 (septiembre de 2006): 18286–90. http://dx.doi.org/10.1021/jp0616664.

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29

Kumykov, Tembulat. "Charge accumulation in thunderstorm clouds: fractal dynamic model". E3S Web of Conferences 127 (2019): 01001. http://dx.doi.org/10.1051/e3sconf/201912701001.

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The paper considers a fractal dynamic charge accumulation model in thunderstorm clouds in view of the fractal dimension. Analytic solution to the model equation has been found. Using numerical calculations we have shown the relationship between the charge accumulation and the medium with the fractal structure. A comparative study of thunderstorm electrification mechanisms have been performed.

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30

Guan, Li y Xiaobo Chen. "Photoexcited Charge Transport and Accumulation in Anatase TiO2". ACS Applied Energy Materials 1, n.º 8 (19 de julio de 2018): 4313–20. http://dx.doi.org/10.1021/acsaem.8b00944.

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31

Chen, X. Y., H. Zhu y S. D. Wang. "Charge accumulation dynamics in organic thin film transistors". Applied Physics Letters 97, n.º 24 (13 de diciembre de 2010): 243301. http://dx.doi.org/10.1063/1.3526374.

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32

Szamota-Leandersson, K., R. Bugoi, M. Göthelid, G. Le Lay y U. O. Karlsson. "Pb induced charge accumulation on InAs(111)B". Surface Science 601, n.º 15 (agosto de 2007): 3246–52. http://dx.doi.org/10.1016/j.susc.2007.05.058.

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33

Decker, U., L. Richter y J. Bo¨s. "Aspects of radiation-induced charge accumulation in dielectrics". Radiation Physics and Chemistry (1977) 26, n.º 5 (enero de 1985): 579–81. http://dx.doi.org/10.1016/0146-5724(85)90214-6.

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34

Lim, F. N., R. J. Fleming y R. D. Naybour. "Space charge accumulation in power cable XLPE insulation". IEEE Transactions on Dielectrics and Electrical Insulation 6, n.º 3 (junio de 1999): 273–81. http://dx.doi.org/10.1109/94.775611.

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35

Gauthier, N. "Radius of curvature and charge accumulation near points". Physics Education 25, n.º 1 (1 de enero de 1990): 7. http://dx.doi.org/10.1088/0031-9120/25/1/103.

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36

Aubrey, J. E. "Charge transport and accumulation in off-axis silicon". Semiconductor Science and Technology 3, n.º 9 (1 de septiembre de 1988): 902–7. http://dx.doi.org/10.1088/0268-1242/3/9/012.

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37

Zhu, Yaqun y Paul R. Chiarot. "Surface charge accumulation and decay in electrospray printing". Journal of Physics D: Applied Physics 54, n.º 7 (28 de noviembre de 2020): 075301. http://dx.doi.org/10.1088/1361-6463/abc449.

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38

Chen, L. Y. "Charge accumulation and frequency characteristics of sequential tunneling". Physical Review B 48, n.º 7 (15 de agosto de 1993): 4914–16. http://dx.doi.org/10.1103/physrevb.48.4914.

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39

Gasworth, S. M., J. R. Melcher y M. Zahn. "Flow-induced charge accumulation in thin insulating tubes". IEEE Transactions on Electrical Insulation 23, n.º 1 (1988): 103–15. http://dx.doi.org/10.1109/14.2343.

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40

Nitta, T. y K. Nakanishi. "Charge accumulation on insulating spacers for HVDC GIS". IEEE Transactions on Electrical Insulation 26, n.º 3 (junio de 1991): 418–27. http://dx.doi.org/10.1109/14.85113.

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41

Stutz, C. E., Qianghua Xie, R. L. Jones y J. L. Brown. "Charge accumulation of quantum dots at room temperature". Journal of Electronic Materials 29, n.º 11 (noviembre de 2000): L29—L31. http://dx.doi.org/10.1007/s11664-000-0137-x.

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42

Abdel-Mottaleb, Mona M. A., Brice Moulari, Arnaud Beduneau, Yann Pellequer y Alf Lamprecht. "Surface-Charge-Dependent Nanoparticles Accumulation in Inflamed Skin". Journal of Pharmaceutical Sciences 101, n.º 11 (noviembre de 2012): 4231–39. http://dx.doi.org/10.1002/jps.23282.

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43

Nagasawa, Kenichiro, Masato Honjoh, Hiroaki Miyake, Rikio Watanabe, Yasuhiro Tanaka y Tatsuo Takada. "Charge Accumulation in Various Electron-Beam-Irradiated Polymers". IEEJ Transactions on Electrical and Electronic Engineering 5, n.º 4 (18 de junio de 2010): 410–15. http://dx.doi.org/10.1002/tee.20553.

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44

Pachoumi, Olympia, Iyad Nasrallah y Henning Sirringhaus. "Charge Accumulation Spectroscopy for Investigating Organic Photovoltaic Stability". Small Methods 1, n.º 1-2 (10 de noviembre de 2016): 1600007. http://dx.doi.org/10.1002/smtd.201600007.

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45

Ye, Tong, Junze Li y Dehui Li. "Charge‐Accumulation Effect in Transition Metal Dichalcogenide Heterobilayers". Small 15, n.º 42 (26 de agosto de 2019): 1902424. http://dx.doi.org/10.1002/smll.201902424.

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46

Zare, Mohammad, Loghman Jamilpanah, Ali Sadeghi, Majid Ghanaatshoar y Majid Mohseni. "Enhancing magnetoimpedance response by anisotropic surface-charge accumulation". Journal of Magnetism and Magnetic Materials 593 (marzo de 2024): 171838. http://dx.doi.org/10.1016/j.jmmm.2024.171838.

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47

Yablon, L. S., O. V. Morushko, B. K. Ostafiychuk, І. М. Budzulyak y О. M. Khemiy. "Effect of laser irradiation on Electrochemical Properties of composite MoS2/C". Фізика і хімія твердого тіла 17, n.º 4 (15 de diciembre de 2016): 575–81. http://dx.doi.org/10.15330/pcss.17.4.575-581.

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The paper presents the results of studies of electrochemical properties of composite MoS2/C. It is shown that the contribution to the conductivity of composites makes a charge accumulation capacitive nature inherent in high-conductive carbon, which is situated between the layers of MoS2, improved charge transfer processes during charge / discharge, and quick turnaround faradeyivski processes inherent molybdenum disulphide. Found that the highest discharge specific capacity has laser irradiated composite MoS2/C with a carbon content of 70% (209 F/g), due to the best combination of two mechanisms of charge accumulation and activation of charge carriers under the influence of laser.

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48

Alexandrov O. V., Tyapkin N. S., Mokrushina S. A. y Fomin V. N. "Effect of ionizing irradiation on charge distribution and breakdown of MOSFETs". Semiconductors 56, n.º 2 (2022): 188. http://dx.doi.org/10.21883/sc.2022.02.53051.9735.

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The effect of ionizing radiation on the formation of charges at internal SiO2-Si (substrate) and external SiO2-Sips (gate) interfacial boundaries (IFB) and on the gate breakdown of MOSFETs is studied. It is shown that with an increase in the dose of ionizing radiation near the internal interfacial boundaries, a monotonous increase of positive charge in p-MOSFETs, and the accumulation of positive charges at first, and at doses above 105 rad the accumulation of negative charges in n-MOSFETs is observed. Near the external interfacial boundaries, at low radiation doses, positive charge accumulation is observed, and at doses >106 rad, negative charge in both p- and n-MOSFETs is observed. Up to a dose of 108 rad ionizing radiation dies not have a noticeable effect on the gate breakdown voltage in both p- and n-MOSFETs at both bias polarities. The absence of influence is explained by a breakdown by mechanism of anode hole injection. Keywords: ionizing radiation, MOSFETs, charge accumulation, gate breakdown.

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Andreev, D. V. "Accumulation and Erase of Radiation-Induced Charge in MOS Structures". Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledovaniâ, n.º 6 (15 de octubre de 2024): 93–98. http://dx.doi.org/10.31857/s1028096024060137.

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It is shown that when a MOS (metal–oxide–semiconductor) structure is simultaneously exposed to radiation and high-field injection of electrons, part of the radiation-induced positive charge can be erased when interacting with injected electrons, and the density of surface states can increase. These phenomena must be taken into account when operating MOS radiation sensors in high-field charge injection modes. High-field injection modes used for post-radiation erase of positive charge in MOS sensors are analyzed. It has been established that to annihilate one hole (radiation-induced positive charge), it is necessary to inject (0.5–2) × 104 electrons into the gate dielectric; the magnitude of the electric field has almost no effect on the process of erasing the radiation-induced charge.

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50

Parfenov P. S., Korzhenevskii I. G., Babaev A. A., Litvin. A. P., Sokolova A. V. y Fedorov A. V. "Measuring the mobility of charge carriers in samples with low conductivity by the field effect transistor method using output characteristics". Technical Physics 68, n.º 4 (2023): 546. http://dx.doi.org/10.21883/tp.2023.04.55948.283-22.

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FET-based charge carrier mobility measurements in low-conductivity materials, as well as semiconductor materials with a high density of trapping states, such as nanocrystals and polycrystalline films, are highly distorted due to charge accumulation in the transistor structure. In this work, a comparative study of the measurement of the mobility of charge carrier in conductive polymers, nanocrystals and polycrystalline films, using the analysis of output and transfer characteristics, was carried out. It is shown that using output characteristics instead of transfer characteristics for calculating the charge carrier mobility helps to avoid a systematic error in the measurement. Keywords: field-effect transistor, FET, charge carrier mobility, output characteristics, transfer characteristics, charge accumulation, nanocrystals.

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