Tesis sobre el tema "Accumulation de charge photoinduite"
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Cruz, neto Daniel H. "Photophysical investigations of reversible charge accumulation in photocatalytic molecular systems". Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP098.
Texto completoInspired by nature’s masterpiece of evolution, the conversion of solar energy through artificial photosynthesis is one of the most promising solutions to the ongoing global energy crisis. Deploying functional artificial mimics of the photosynthetic apparatus, however, requires a deep understanding of the processes embedded in the functioning of naturally photosensitizing organisms as they provide the roadmap to realize artificial photosynthetic devices. These processes include light harvesting, charge separation, multiple charge transfer steps leading to effective charge accumulation and, finally, efficient catalysis. In this work, we investigate all of these elementary steps by employing state-of-the-art time-resolved spectroscopic approaches with the goal of exploring the photophysics of different biomimetic molecular systems devoted to the photoreduction of carbon dioxide (CO₂) to produce energy-rich solar fuels. We start with the development of a novel pump-pump-probe experimental setup that is capable of triggering and detecting the stepwise accumulation of charge through the powerful lens of a resonance-enhanced Raman scattering probe. A model system containing the methyl viologen dication (MV²⁺) as a dual electron acceptor, the prototypical [Ru(bpy)₃]²⁺ complex as a photosensitizer, and ascorbate as a reversible electron donor is used for a proof-of-concept of the technique. Indeed, with the first pump, MV•⁺ is formed and detected through its fingerprint vibrational mode at 1356 cm⁻¹. When the transient concentration of MV•⁺ peaks, we fire the second laser pump and show the possibility of tracking the reversible formation of the two-electron accumulated MV⁰ species through a unique vibrational mode at 992 cm⁻¹. We then move on to investigating catalytically active systems featuring iron porphyrin derivatives as CO₂ reduction catalysts. These porphyrins are integrated into multicomponent biomimetic systems that similarly contain [Ru(bpy)₃]²⁺ and ascorbate as photosensitizer and reversible electron donor, respectively. For the urea-functionalized derivative (FeUr), a catalyst with a hydrogen-bonding network lodged in its second coordination sphere, we provide a full mechanistic depiction of all photoinduced processes leading to charge accumulation and its activation towards CO₂. In inert atmosphere, starting from Feˡˡˡ, we report the stepwise formation of the formal Feˡ species as a result of the double pump excitation strategy. Remarkably, under catalytic conditions in the presence of CO₂, our spectroscopy-based approach provides compelling evidence that the Feˡ oxidation state of FeUr, product of two consecutive electron transfer steps, is already catalytically active, evidenced by the accumulation of the stable Feˡˡ‒CO intermediate of the CO₂ reduction cycle. Going beyond FeUr, we show that Feˡ is catalytically active irrespective of the design strategy used in the functionalization of the porphyrin macrocycle, challenging the classical picture of CO₂ reduction catalysis promoted by iron porphyrins. Finally, we move away from the prototypical [Ru(bpy)₃]²⁺ complex and dive into the photophysics of different photosensitizers based on earth-abundant elements, including copper(I)-based complexes, a perfluorinated zinc porphyrin derivative (ZnF₂₀), and a fully organic triazatriangulenium carbocationic dye (TATA⁺). Importantly, we show that the TATA⁺ dye is capable of photosensitizing charge accumulation on the active FeUr-based system, activating it towards the reduction of CO₂. The characterization of new photosensitizing units based on abundant elements is fundamental for the development of artificial photosystems with real-world applications
Di, Pietro Riccardo. "Charge accumulation spectroscopy of organic semiconductors". Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610645.
Texto completoLiu, Q. "Charge transport and accumulation around HVDC insulators". Thesis, University of Liverpool, 2017. http://livrepository.liverpool.ac.uk/3019590/.
Texto completoOlson, Carol Louise. "Charge accumulation and recombination in nanocrystalline metal oxide electrodes". Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405970.
Texto completoGlicofridis, Paul Ioannis 1973. "Subsurface Charge Accumulation imaging of the quantum Hall liquid". Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/29894.
Texto completoIncludes bibliographical references (p. 161-172).
We describe results obtained by a novel scanning technique, called Subsurface Charge Accumulation (SCA) Imaging, that enables the direct imaging of electronic systems buried inside semiconductor materials. Using SCA Imaging, we image and measure properties of a two-dimensional electron system (2DES) in a GaAs/AlGaAs heterostructure, in the regime of the integer quantum Hall effect. We observe general charging features in a plain 2DES near quantum Hall integer filling factors. We proceed by imaging low compressibility strips in the presence of an artificially created density gradient in the 2DES. We study them in detail at Landau level filling factors v = 2, 4. The strips appear significantly wider than predicted by theory and we account for the discrepancy by presenting a model that considers the disorder-induced nonzero density of states in the cyclotron gap. We also measure the charging properties of incompressible strips that form parallel to the edges of a metal gate deposited on the surface of our sample. An RC model considering charging of the 2DES across the strip, closely fits the data. This allows us to determine the longitudinal resistivity of the incompressible part of the edge state that runs parallel to the gate, for a range of filling factors. Surprisingly, the strip becomes more resistive in regions of high electronic density gradient, where its width is expected to decrease. By sensing charge from the motion of single electrons inside the 2DES we produce a topographic map of the random potential inside the integer quantum Hall liquid.
(cont.) We achieve this by creating a mobile quantum dot inside the 2DES. By scanning the dot, single electrons enter or leave it, in response to the local potential. Detection of this motion leads to the creation of a potential contour map. We find that the 2D electron screening of the random potential induced by external impurities, changes little between quantum Hall plateaus and within each plateau. We finally present preliminary results from a 2DES sample with a built-in backgate. The backgate enables us to deplete the 2DES and perform measurements in the regime of low electronic densities.
by Paul Ioannis Glicofridis.
Ph.D.
Mauseth, Frank. "Charge accumulation in rod-plane air gap with covered rod". Doctoral thesis, Norwegian University of Science and Technology, Faculty of Information Technology, Mathematics and Electrical Engineering, 2007. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-1489.
Texto completoThe focus of this work has been on hybrid insulation in inhomogeneous electric fields under lightning impulse voltage stress. The principal idea behind hybrid insulation is the intentional use of surface charges to re-distribute the electric field within an insulation system. This allows a significant part of the electric stress to be transferred from the dielectric weaker gas to the dielectric stronger solid insulation thus increasing the total electric strength of the insulation system.
The concept has been theoretically and experimentally addressed by means of a hemispheric rod covered with a layer of solid insulation. Discharge activity and surface charge accumulation have been studied in an air gap by measuring the voltage and discharge current and recording the discharge activity using a high-speed digital camera. New methods have been introduced and evaluated for the evaluation of surface charge measurements.
The experiments found that the increase in positive inception voltage was considerable compared to uncovered rods. This increase varied from 35% up to 100% depending on the electrode distance. The increase in breakdown strength is higher than the increase in inception voltage and dependent on the covered length of the rod. During the application of a lightning impulse, the discharge activity spreads upwards along the rod and out into the air gap. Positive discharges form numerous branches and bridge the air gap in most cases. Negative discharges are more diffuse, less light intensive and only form a few branches around the tip of the rod where the electric field is the strongest. Discharge activity along the insulating surface has been observed where the background field is lower than the critical electric field strength. Visible discharge activity is observed where the background field is higher than 2.3 kV/mm and 2.5 kV/mm for positive and negative impulses respectively.
During the application of lightning impulses, discharge activity starts in the air gap around the tip where the electric field is highest and spreads upwards along the rod. As expected, negative charges accumulate on the surface in the case of positive impulse voltage and vice versa. However, after more powerful discharges during negative impulse voltage application, surface charges of both polarities have been observed.
Accumulated surface charges decay exponentially with a time constant τ varying from micro-seconds to hours depending on the material properties of the solid insulation. The dominating relaxation mechanism is found to be conduction through the solid insulation.
Improved methods to calculate surface charges based on probe response for a 2D axial symmetric case have been developed and evaluated. The method that is best suited for this purpose is the λ-method with truncated singular value decomposition (TSVD) as regularization.
Surface charge calculations show that the accumulated surface charges for the used configuration typically have a maximum value of 0.6 to 1.5 µC/m² and 0.4 to 1 µC/m² after positive and negative impulses respectively. The surface charge density in the areas with the highest discharge activity is relatively uniform. Further upwards along the rod, the surface charge density is reduced relatively fast towards zero, and in some cases, it changes polarity before approaching zero.
Nikonov, Vladimir. "Influence of electrode surface charge accumulation upon partial discharge behavior". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0016/MQ53594.pdf.
Texto completoCherukupalli, Sudhakar Ellapragada. "Surface charge accumulation on spacers under switching impulses in sulphur hexafluoride gas". Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26973.
Texto completoApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
Zhou, Jianping. "A study of charge accumulation and spacer flashover in compressed gas insulation". Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/32116.
Texto completoApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
Okubo, Hitoshi, Fumihiro Endo, Naoki Hayakawa, Hiroki Kojima, Kanako Nishizawa y Diaa-Eldin A. Mansour. "Charge accumulation effects on time transition of partial discharge activity at GIS spacer defects". IEEE, 2010. http://hdl.handle.net/2237/14529.
Texto completoBonafè, Filippo. "Charge accumulation and transport in degenerately doped semiconducting polymers with mixed ionic and electronic conductivity". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/21710/.
Texto completoOkubo, Hitoshi, Diaa-Eldin A. Mansour, Hiroki Kojima, Naoki Hayakawa y Fumihiro Endo. "Surface charge accumulation and partial discharge activity for small gaps of electrode/epoxy interface in sf6 gas". IEEE, 2009. http://hdl.handle.net/2237/13944.
Texto completoLopes, Ludovic. "Transfert de charge des aquahydroxocomplexes de fer (III) : mécanismes d'oxydation radicalaire de composés aliphatiques hydroxylés photoinduite par l'ion hexaaqua fer (III), réactivité des radicaux peroxyle, rendements quantiques de photoréduction". Poitiers, 2002. http://www.theses.fr/2002POIT2269.
Texto completoThe charge transfer of main Iron(III) aquahydroxocomplexes has been studied using electronic spectrotroscopy. Confronting the results obtained with those of semi-empirical calculations, enabled to label which type of transitions, and molecular orbitals are involved. The photolysis of the hexaaquairon(III) ion was therefore explored, with aliphatic alcohols, utilised as radical cavengers. In absence of oxygen, the photoinduced degradation of these substrates provided consistent methods of quantum yield determination. The impact of peroxyl radicals on reaction pathways has also been investigated. Some new reactivities were highlighted, and assessed through kinetic modelling. Eventually, the photoreduction quantum yields of the Fe3+aq, Fe(OH)2+ and Fe(OH)2+ monomers, as well as of the Fe2(æ-OH)24+ dimer have been determined experimentally; wavelength dependence models are proposed
Amiaud, Anne-Charlotte. "Modélisation du transport électronique et de l'accumulation de la charge dans les isolants en couches minces". Thesis, Sorbonne université, 2018. http://www.theses.fr/2018SORUS004/document.
Texto completoDielectric materials can be found in numerous devices in microelectronics. They can be subjected to significant electrical stress, which impacts their lifetime. Indeed, this electrical stress can lead to dielectric breakdown or modify the component performances by charge storage. In this work, several characterization methods and physical analysis have been used in order to study the samples and identify mechanisms involved in charge transport in silicon nitride thin films. Then a simulation code has been developed to model charge transport phenomena in insulators. This model takes into account tunnel and thermal effects in the dielectric and at the dielectric-metal interfaces. The temporal and spatial evolution of physical quantities (currents, charge, electric field) in the dielectric film are calculated. Measurement results on capacitive components can be obtained thanks to simulations. This simulation tool allows testing dielectric materials according to capacitive component reliability. It may be used to define optimal properties for materials depending on applications or to assist in device design in microelectronics
Okubo, Hitoshi, Diaa-Eldin A. Mansour, Hiroki Kojima, Naoki Hayakawa y Fumihiro Endo. "Influence of accumulated surface charges on partial discharge activity at micro gap delamination in epoxy GIS spacer". IEEE, 2009. http://hdl.handle.net/2237/13942.
Texto completoBahout, Mona. "Propriétés photophysiques de complexes polypyridine de Fe(II), Ru(II) et Os(II) : mise en évidence d'une localisation de l'électron dans les états excités de complexes 4-phényl-terpyridine de Ru(II)". Paris 11, 1989. http://www.theses.fr/1989PA112389.
Texto completoBowen, Martin. "Tranport Tunnel Polarisé en Spin à l'Etat Solide". Phd thesis, Université Paris Sud - Paris XI, 2003. http://tel.archives-ouvertes.fr/tel-00003921.
Texto completoPachoumi, Olympia. "Metal oxide/organic interface investigations for photovoltaic devices". Thesis, University of Cambridge, 2014. https://www.repository.cam.ac.uk/handle/1810/246263.
Texto completoPelčák, Jaromír. "Transport elektrického náboje v tantalovém kondenzátoru". Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2012. http://www.nusl.cz/ntk/nusl-233579.
Texto completoYu-YingChen y 陳昱穎. "Study of the mechanism of charge accumulation in organic nonvolatile memories". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/6fy8kp.
Texto completo國立成功大學
光電科學與工程學系
100
Pentacene and N,N’-dioctadecy1-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) are used as active layers to fabricate organic non-volatile memory devices with various types of charge trapping layer. Several types of semiconductor film are used to determine the impact of surface morphology and electrical properties. In the first part, a single-layer structure that has a trapping layer, Polystyrene (Ps), and cross-linked poly (4-vinylphenol) (C-PVP) and a double-layer structure that has a modification layer and a trapping layer, PS + PS, C-PVP + Poly (a-methylstyrene) (PαMS), and PS + polymethylmethac- 0.rylate (PMMA) are used. The memory window of the double–layer structure is much larger than that of the single-layer structure. C-PVP + PαMS provides the largest memory window and the best stability. In the second part, three types of polyimide, namely DA7013, DA9000, and DA9000A, are used as a trapping layer to fabricate non-volatile memory devices. The main structures of DA9000 and DA9000A are the same, but DA9000A does not have a side chain and thus lacks the ability to capture carriers. DA9000A is thus unsuitable for a memory device. The opposite is true for DA9000. DA7013 exhibits an excellent n-type memory feature and durability.
KRČKA, Pavel. "Fotovoltaické dobíjecí regulátory v ostrovních systémech". Master's thesis, 2013. http://www.nusl.cz/ntk/nusl-156255.
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