Literatura académica sobre el tema "2d-3d tcad"
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Artículos de revistas sobre el tema "2d-3d tcad"
IÑIGUEZ, BENJAMIN, ROMAIN RITZENTHALER y FRANÇOIS LIME. "COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs". International Journal of High Speed Electronics and Systems 22, n.º 01 (noviembre de 2013): 1350004. http://dx.doi.org/10.1142/s0129156413500043.
Texto completoRahimo, Munaf T., Iulian Nistor y David Green. "Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology". Materials Science Forum 1062 (31 de mayo de 2022): 539–43. http://dx.doi.org/10.4028/p-u88313.
Texto completoAguirre, P., M. Rau y A. Schenk. "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling". Solid-State Electronics 159 (septiembre de 2019): 123–28. http://dx.doi.org/10.1016/j.sse.2019.03.043.
Texto completoDash, T. P., S. Dey, S. Das, J. Jena, E. Mahapatra y C. K. Maiti. "Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node". Nanoscience & Nanotechnology-Asia 10, n.º 4 (26 de agosto de 2020): 447–56. http://dx.doi.org/10.2174/2210681209666190809101307.
Texto completoMo, Fei, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto y Masaharu Kobayashi. "A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures". Japanese Journal of Applied Physics 61, SC (9 de febrero de 2022): SC1013. http://dx.doi.org/10.35848/1347-4065/ac3d0e.
Texto completoRahimo, Munaf, Iulian Nistor y David Green. "Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept". Key Engineering Materials 945 (19 de mayo de 2023): 83–89. http://dx.doi.org/10.4028/p-g4w5h5.
Texto completoItalia, Markus, Ioannis Deretzis, Alfio Nastasi, Silvia Scalese, Antonino La Magna, Massimo Pirnaci, Daniele Pagano, Dario Tenaglia y Patrizia Vasquez. "Multiscale Simulations of Plasma Etching in Silicon Carbide Structures". Materials Science Forum 1062 (31 de mayo de 2022): 214–18. http://dx.doi.org/10.4028/p-n9v122.
Texto completoTripathi, Suman Lata. "Pocket Vertical Junction-Less U-Shape Tunnel FET and Its Challenges in Nano-Scale Regime". Advanced Science, Engineering and Medicine 11, n.º 12 (1 de diciembre de 2019): 1225–30. http://dx.doi.org/10.1166/asem.2019.2466.
Texto completoAssiouras, P., P. Asenov, A. Kyriakis y D. Loukas. "Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations". Journal of Instrumentation 15, n.º 11 (24 de noviembre de 2020): P11034. http://dx.doi.org/10.1088/1748-0221/15/11/p11034.
Texto completoSulaiman, Raed, Pradip De, Jennifer C. Aske, Xiaoqian Lin, Adam Dale, Kris Gaster, Luis Rojas Espaillat, David Starks y Nandini Dey. "A CAF-Based Two-Cell Hybrid Co-Culture Model to Test Drug Resistance in Endometrial Cancers". Biomedicines 11, n.º 5 (29 de abril de 2023): 1326. http://dx.doi.org/10.3390/biomedicines11051326.
Texto completoTesis sobre el tema "2d-3d tcad"
Bourgeat, Johan. "Etude du thyristor en technologies CMOS avancées pour implémentation dans des stratégies locale et globale de protection contre les décharges électrostatiques". Toulouse 3, 2011. http://thesesups.ups-tlse.fr/5671/.
Texto completoThe research work presented in this thesis addresses the issues related to the protection against electrostatic discharges (ESD) of integrated circuits in advanced technology nodes, CMOS45nm and CMOS32nm. The lithography dimension shrinking and the introduction of new technological process steps contribute to increase the ESD sensitivity. Excellent IC environment control together with the addition of dedicated protection circuits enable to decrease ESD failures. Thus, this research work consists to propose new protections based on the use of silicon controlled rectifier (SCR) devices. For that reason, a thorough study of the SCR behavior during ESD events has been carried out using three-dimensional TCAD simulations. This study enables the optimization of the main SCR parameters to improve its performance. To allow the SCR utilization as a local ESD protection with a power IO, a trigger circuit has been studied and firstly validated in CMOS45nm technology. Then, the trigger circuit optimization has been realized with SPICE simulations. The full protection has been developed in CMOS32nm and improved with bidirectional SCR (Triac). Finally, a new global protection strategy based on one network of three bidirectional SCRs, called "Beta-Matrix" has been investigated. A first study is focused on the development of its trigger circuit and a second one on the optimization of the "Beta-Matrix" topology. This protection strategy has been fully validated in CMOS32nm node
Postel-Pellerin, Jérémy. "Fiabilité des Mémoires Non-Volatiles de type Flash en architectures NOR et NAND". Phd thesis, Université de Provence - Aix-Marseille I, 2008. http://tel.archives-ouvertes.fr/tel-00370377.
Texto completoCapítulos de libros sobre el tema "2d-3d tcad"
Wu, Yung-Chun y Yi-Ruei Jhan. "2D MOSFET Simulation". En 3D TCAD Simulation for CMOS Nanoeletronic Devices, 19–90. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3066-6_2.
Texto completoActas de conferencias sobre el tema "2d-3d tcad"
Kaid, Achraf, Fabrice Roqueta, Jean-Baptiste Kammerer y Luc Hebrard. "Electro-thermal Modeling Method of Protection Power Diodes Using TCAD 3D / 2D approach". En 2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2019. http://dx.doi.org/10.1109/therminic.2019.8923815.
Texto completoPostel-Pellerin, J., F. Lalande, P. Canet, R. Bouchakour, F. Jeuland, B. Bertello y B. Villard. "A full 2D and 3D TCAD simulation of ultimate 22nm NAND Flash memories". En 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009). IEEE, 2009. http://dx.doi.org/10.1109/nvmt.2009.5429787.
Texto completoAguirre, P., M. Rau y A. Schenk. "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling". En 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2018. http://dx.doi.org/10.1109/ulis.2018.8354744.
Texto completoBenistant, F., M. Bazizi, L. Jiang, J. H. M. Tng y M. H. J. Goh. "Full 3D process/device simulations re-using 2D TCAD knowledge for optimizing N and P-type FinFET transistors". En 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874650.
Texto completoMorabito, Caterina, Simone Guarnieri, Marika Berardini, Luisa Gesualdi, Francesca Ferranti, Anna Reale, Giulia Ricci, Angela Catizone y Maria A. Mariggiò. "Microgravity-Induced Metabolic Response in 2D and 3D TCam-2 Cell Cultures". En Cells 2023. Basel Switzerland: MDPI, 2023. http://dx.doi.org/10.3390/blsf2023021007.
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