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1

Smontara, Ana, and Katica Biljaković. "Thermal Properties Of ZrTe5." Molecular Crystals and Liquid Crystals 121, no. 1-4 (March 1985): 141–44. http://dx.doi.org/10.1080/00268948508074849.

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2

Eaglesham, D. J., J. Mulcahy, and J. A. Wilson. "Structural polytypes of ZrTe5." Journal of Physics C: Solid State Physics 20, no. 3 (January 30, 1987): 351–55. http://dx.doi.org/10.1088/0022-3719/20/3/006.

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3

Wang, Jingyue, Jingjing Niu, Baoming Yan, Xinqi Li, Ran Bi, Yuan Yao, Dapeng Yu, and Xiaosong Wu. "Vanishing quantum oscillations in Dirac semimetal ZrTe5." Proceedings of the National Academy of Sciences 115, no. 37 (August 27, 2018): 9145–50. http://dx.doi.org/10.1073/pnas.1804958115.

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One of the characteristics of topological materials is their nontrivial Berry phase. Experimental determination of this phase largely relies on a phase analysis of quantum oscillations. We study the angular dependence of the oscillations in a Dirac material ZrTe5 and observe a striking spin-zero effect (i.e., vanishing oscillations accompanied with a phase inversion). This indicates that the Berry phase in ZrTe5 remains nontrivial for arbitrary field direction, in contrast with previous reports. The Zeeman splitting is found to be proportional to the magnetic field based on the condition for the spin-zero effect in a Dirac band. Moreover, it is suggested that the Dirac band in ZrTe5 is likely transformed into a line node other than Weyl points for the field directions at which the spin zero occurs. The results underline a largely overlooked spin factor when determining the Berry phase from quantum oscillations.
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4

Liang, Tian, Jingjing Lin, Quinn Gibson, Satya Kushwaha, Minhao Liu, Wudi Wang, Hongyu Xiong, et al. "Anomalous Hall effect in ZrTe5." Nature Physics 14, no. 5 (March 19, 2018): 451–55. http://dx.doi.org/10.1038/s41567-018-0078-z.

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5

Li, Qiang, Dmitri E. Kharzeev, Cheng Zhang, Yuan Huang, I. Pletikosić, A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D. Gu, and T. Valla. "Chiral magnetic effect in ZrTe5." Nature Physics 12, no. 6 (February 8, 2016): 550–54. http://dx.doi.org/10.1038/nphys3648.

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6

Singh, Sukriti, Nitesh Kumar, Subhajit Roychowdhury, Chandra Shekhar, and Claudia Felser. "Anisotropic large diamagnetism in Dirac semimetals ZrTe5 and HfTe5." Journal of Physics: Condensed Matter 34, no. 22 (April 1, 2022): 225802. http://dx.doi.org/10.1088/1361-648x/ac5d19.

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Abstract Dirac semimetals, e.g., ZrTe5 and HfTe5, have been widely investigated and have exhibited various exotic physical properties. Nevertheless, several properties of these compounds, including diamagnetism, are still unclear. In this study, we measured the temperature- and field-dependent diamagnetism of ZrTe5 and HfTe5 along all three crystallographic axes (a-, b-, and c-axis). The temperature-dependent magnetization shows an anomaly, which is a characteristic of Dirac crossing. Diamagnetic signal reaches the highest value of 17.3 × 10−4 emu mol−1 Oe−1 along the van der Waals layers, i.e., the b-axis. However, the diamagnetism remains temperature-independent along the other two axes. The field-dependent diamagnetic signal grows linearly without any sign of saturation and maintains a large value along the b-axis. Interestingly, the observed diamagnetism is anisotropic like other physical properties of these compounds and is strongly related to the effective mass, indicating the dominating contribution of orbital diamagnetism in Dirac semimetals induced by interband effects. ZrTe5 and HfTe5 show one of the largest diamagnetic value among previously reported state-of-the-art topological semimetals. Our present study adds another important experimental aspect to characterize nodal crossing and search for other topological materials with large magnetic susceptibility.
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7

Mutch, Joshua, Wei-Chih Chen, Preston Went, Tiema Qian, Ilham Zaky Wilson, Anton Andreev, Cheng-Chien Chen, and Jiun-Haw Chu. "Evidence for a strain-tuned topological phase transition in ZrTe5." Science Advances 5, no. 8 (August 2019): eaav9771. http://dx.doi.org/10.1126/sciadv.aav9771.

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A phase transition between topologically distinct insulating phases involves closing and reopening the bandgap. Near the topological phase transition, the bulk energy spectrum is characterized by a massive Dirac dispersion, where the bandgap plays the role of mass. We report measurements of strain dependence of electrical transport properties of ZrTe5, which is known to host massive Dirac fermions in the bulk due to its proximity to a topological phase transition. We observe that the resistivity exhibits a pronounced minimum at a critical strain. We further find that the positive longitudinal magnetoconductance becomes maximal at the critical strain. This nonmonotonic strain dependence is consistent with the switching of sign of the Dirac mass and, hence, a strain-tuned topological phase transition in ZrTe5.
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8

Tang, Fangdong, Peipei Wang, Peng Wang, Yuan Gan, Le Wang, Wei Zhang, and Liyuan Zhang. "Multi-carrier transport in ZrTe5 film." Chinese Physics B 27, no. 8 (August 2018): 087307. http://dx.doi.org/10.1088/1674-1056/27/8/087307.

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9

Smontara, Ana, Katica Biljaković, Marko Miljak, and Takashi Sambongi. "Thermal and magnetic measurements on ZrTe5." Physica B+C 143, no. 1-3 (November 1986): 267–69. http://dx.doi.org/10.1016/0378-4363(86)90114-2.

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10

Sambongi, T., K. Biljakovic, A. Smontara, and L. Guemas. "Structural modification and heat capacity of ZrTe5." Synthetic Metals 10, no. 3 (January 1985): 161–68. http://dx.doi.org/10.1016/0379-6779(85)90187-0.

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11

Behera, Prakash, Manju Mishra Patidar, Sumit Bera, U. P. Deshpande, R. Venkatesh, and V. Ganesan. "Transport and thermal properties of polycrystalline ZrTe5." Journal of Applied Physics 127, no. 23 (June 21, 2020): 235110. http://dx.doi.org/10.1063/1.5131556.

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12

You, Le, Zi-Yue Zhang, and Yi-Xiang Wang. "Magneto-optic signatures in the gapped Dirac semimetal with mixed linear and parabolic dispersions of ZrTe5." New Journal of Physics 23, no. 12 (December 1, 2021): 123033. http://dx.doi.org/10.1088/1367-2630/ac3e1a.

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Abstract In this paper, we give a systematic theoretical study on the Landau levels (LLs) and magneto-optical conductivity Re(σ αα ) in a gapped Dirac semimetal model with mixed linear and parabolic dispersions under a magnetic field, which was recently proposed by Jiang et al (2020 Phys. Rev. Lett. 125 046403) to explain the experimental magnetoinfrared spectroscopy in the three-dimensional ZrTe5 crystal. We find that the strong magnetic field can drive the LLs become noninverted and thus the strong topological insulator phase in ZrTe5 turns to be a trivial insulator. In the different magnetic field regions, the density of states and Re(σ αα ) can exhibit distinct signatures. Moreover, when the magnetic field is weak, a qualitative relation in Re(σ zz ) between the peaks at the saddle points is revealed as Re $?> ( σ z z ζ n ) > Re ( σ z z Γ ) , which is in good agreement with the experiment.
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13

Konstantinova, Tatiana, Lijun Wu, Weiguo Yin, Jing Tao, Genda Gu, Igor Zaliznyak, and Yimei Zhu. "Photoinduced Topological Insulator to Dirac Semimetal Transition in ZrTe5." Microscopy and Microanalysis 27, S1 (July 30, 2021): 2718–19. http://dx.doi.org/10.1017/s1431927621009570.

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14

Wang, Wei, Xiaoqian Zhang, Yafei Zhao, Huanfeng Xu, QiangSheng Lu, Chang Liu, Xiaoying Hu, et al. "The metal-insulator transition in ZrTe5 induced by temperature." AIP Advances 8, no. 12 (December 2018): 125110. http://dx.doi.org/10.1063/1.5064732.

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15

Chi, Hang, Cheng Zhang, Genda Gu, Dmitri E. Kharzeev, Xi Dai, and Qiang Li. "Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5." New Journal of Physics 19, no. 1 (January 12, 2017): 015005. http://dx.doi.org/10.1088/1367-2630/aa55a3.

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16

Yuan, Xiang, Cheng Zhang, Yanwen Liu, Awadhesh Narayan, Chaoyu Song, Shoudong Shen, Xing Sui, et al. "Observation of quasi-two-dimensional Dirac fermions in ZrTe5." NPG Asia Materials 8, no. 11 (November 2016): e325-e325. http://dx.doi.org/10.1038/am.2016.166.

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17

Nenoff, Tina M., David X. Rademacher, Mark A. Rodriguez, Wenlong Yu, and Wei Pan. "Single-Crystal Synthesis and Characterization of Copper-Intercalated ZrTe5." Crystal Growth & Design 20, no. 2 (December 9, 2019): 699–705. http://dx.doi.org/10.1021/acs.cgd.9b01125.

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18

Zhou, Yonghui, Juefei Wu, Wei Ning, Nana Li, Yongping Du, Xuliang Chen, Ranran Zhang, et al. "Pressure-induced superconductivity in a three-dimensional topological material ZrTe5." Proceedings of the National Academy of Sciences 113, no. 11 (February 29, 2016): 2904–9. http://dx.doi.org/10.1073/pnas.1601262113.

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As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Using resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement, and theoretical calculations enable a complete understanding of the emerging exotic properties in 3D topological materials under extreme environments.
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19

Wang, Jingyue, Jingjing Niu, Xinqi Li, Xiumei Ma, Yuan Yao, and Xiaosong Wu. "Facile and fast growth of high mobility nanoribbons of ZrTe5." Chinese Physics B 29, no. 6 (June 2020): 068102. http://dx.doi.org/10.1088/1674-1056/ab889a.

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20

McIlroy, D. N., S. Moore, Daqing Zhang, J. Wharton, B. Kempton, R. Littleton, M. Wilson, T. M. Tritt, and C. G. Olson. "Observation of a semimetal–semiconductor phase transition in the intermetallic ZrTe5." Journal of Physics: Condensed Matter 16, no. 30 (July 17, 2004): L359—L365. http://dx.doi.org/10.1088/0953-8984/16/30/l02.

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21

Wang, Cong, Haifeng Wang, Y. B. Chen, Shu-Hua Yao, and Jian Zhou. "First-principles study of lattice thermal conductivity in ZrTe5 and HfTe5." Journal of Applied Physics 123, no. 17 (May 7, 2018): 175104. http://dx.doi.org/10.1063/1.5020615.

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22

Tang, Fangdong, Yafei Ren, Peipei Wang, Ruidan Zhong, John Schneeloch, Shengyuan A. Yang, Kun Yang, et al. "Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe5." Nature 569, no. 7757 (May 2019): 537–41. http://dx.doi.org/10.1038/s41586-019-1180-9.

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23

Hooda, M. K., and C. S. Yadav. "Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5." Applied Physics Letters 111, no. 5 (July 31, 2017): 053902. http://dx.doi.org/10.1063/1.4997460.

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24

Léonard, François, Wenlong Yu, Kimberlee C. Collins, Douglas L. Medlin, Joshua D. Sugar, A. Alec Talin, and Wei Pan. "Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5." ACS Applied Materials & Interfaces 9, no. 42 (October 11, 2017): 37041–47. http://dx.doi.org/10.1021/acsami.7b11056.

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25

Fjellvåg, H., and A. Kjekshus. "Structural properties of ZrTe5 and HfTe5 as seen by powder diffraction." Solid State Communications 60, no. 2 (October 1986): 91–93. http://dx.doi.org/10.1016/0038-1098(86)90536-3.

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26

Wang, Huichao, Haiwen Liu, Yanan Li, Yongjie Liu, Junfeng Wang, Jun Liu, Ji-Yan Dai, et al. "Discovery of log-periodic oscillations in ultraquantum topological materials." Science Advances 4, no. 11 (November 2018): eaau5096. http://dx.doi.org/10.1126/sciadv.aau5096.

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Quantum oscillations are usually the manifestation of the underlying physical nature in condensed matter systems. Here, we report a new type of log-periodic quantum oscillations in ultraquantum three-dimensional topological materials. Beyond the quantum limit (QL), we observe the log-periodic oscillations involving up to five oscillating cycles (five peaks and five dips) on the magnetoresistance of high-quality single-crystal ZrTe5, virtually showing the clearest feature of discrete scale invariance (DSI). Further, theoretical analyses show that the two-body quasi-bound states can be responsible for the DSI feature. Our work provides a new perspective on the ground state of topological materials beyond the QL.
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27

Guo, Zhengfeng, Honggang Gu, Mingsheng Fang, Baokun Song, Wei Wang, Xiuguo Chen, Chuanwei Zhang, Hao Jiang, Lin Wang, and Shiyuan Liu. "Complete Dielectric Tensor and Giant Optical Anisotropy in Quasi-One-Dimensional ZrTe5." ACS Materials Letters 3, no. 5 (April 12, 2021): 525–34. http://dx.doi.org/10.1021/acsmaterialslett.1c00026.

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28

Zhang, Yan-Yan, Chen Di, Yang-Yang Lv, Song-Tao Dong, Jian Zhou, Shu-Hua Yao, Y. B. Chen, Ming-Hui Lu, and Yan-Feng Chen. "One-Order Decrease of Thermal Conductivity in Nanostructured ZrTe5 and HfTe5 Crystals." Crystal Growth & Design 20, no. 2 (December 26, 2019): 680–87. http://dx.doi.org/10.1021/acs.cgd.9b01108.

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29

Ramiere, Aymeric, Fu Li, Yuexing Chen, and Yongqing Fu. "Thermoelectric properties and low thermal conductivity of nanocomposite ZrTe5 under magnetic field." Journal of Alloys and Compounds 840 (November 2020): 155651. http://dx.doi.org/10.1016/j.jallcom.2020.155651.

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30

Lv, Yang-Yang, Fan Zhang, Bin-Bin Zhang, Bin Pang, Shu-Hua Yao, Y. B. Chen, Liwang Ye, Jian Zhou, Shan-Tao Zhang, and Yan-Feng Chen. "Microstructure, growth mechanism and anisotropic resistivity of quasi-one-dimensional ZrTe5 crystal." Journal of Crystal Growth 457 (January 2017): 250–54. http://dx.doi.org/10.1016/j.jcrysgro.2016.04.042.

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31

Ge, Jun, Da Ma, Yanzhao Liu, Huichao Wang, Yanan Li, Jiawei Luo, Tianchuang Luo, et al. "Unconventional Hall effect induced by Berry curvature." National Science Review 7, no. 12 (July 15, 2020): 1879–85. http://dx.doi.org/10.1093/nsr/nwaa163.

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Abstract Berry phase and Berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state systems. In this paper, we report the finding of novel nonzero Hall effect in topological material ZrTe5 flakes when the in-plane magnetic field is parallel and perpendicular to the current. Surprisingly, both symmetric and antisymmetric components with respect to magnetic field are detected in the in-plane Hall resistivity. Further theoretical analysis suggests that the magnetotransport properties originate from the anomalous velocity induced by Berry curvature in a tilted Weyl semimetal. Our work not only enriches the Hall family but also provides new insights into the Berry phase effect in topological materials.
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32

Luo, Liang, Di Cheng, Boqun Song, Lin-Lin Wang, Chirag Vaswani, P. M. Lozano, G. Gu, et al. "A light-induced phononic symmetry switch and giant dissipationless topological photocurrent in ZrTe5." Nature Materials 20, no. 3 (January 18, 2021): 329–34. http://dx.doi.org/10.1038/s41563-020-00882-4.

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33

Tang, Fangdong, Peipei Wang, Mingquan He, Masahiko Isobe, Genda Gu, Qiang Li, Liyuan Zhang, and Jurgen H. Smet. "Two-Dimensional Quantum Hall Effect and Zero Energy State in Few-Layer ZrTe5." Nano Letters 21, no. 14 (July 12, 2021): 5998–6004. http://dx.doi.org/10.1021/acs.nanolett.1c00958.

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34

Zhou, L., A. Ramiere, P. B. Chen, J. Y. Tang, Y. H. Wu, X. Lei, G. P. Guo, J. Q. He, and H. T. He. "Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals." New Journal of Physics 21, no. 9 (September 11, 2019): 093009. http://dx.doi.org/10.1088/1367-2630/ab3dbb.

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35

Chen, Si-Si, Xiao Li, Yang-Yang Lv, Lin Cao, Dajun Lin, Shu-Hua Yao, Jian Zhou, and Y. B. Chen. "Electrical, magneto-transport and significant thermoelectric properties of Te-rich ZrTe5+δ polycrystals." Journal of Alloys and Compounds 764 (October 2018): 540–44. http://dx.doi.org/10.1016/j.jallcom.2018.06.115.

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36

Cai, Enlin, Chun Qi, Xiaohui Hu, Long Du, Linhong Hao, Shuaiyi Zhang, Fei Lou, Maorong Wang, Tao Li, and Aifeng Wang. "Zirconium pentatelluride as saturable absorber for 2µm ultrafast solid-state laser." Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc00336a.

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High-quality 2 µm ultrafast laser is successfully developed using a zirconium pentatelluride saturable absorber mirror (ZrTe5-SAM) composed of a layered structure of ZrTe5. Continuous wave mode-locked (CWML) operation has been...
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37

Tritt, T. M., M. L. Wilson, R. L. Littleton, C. Feger, J. Kolis, A. Johnson, D. T. Verebelyi, S. J. Hwu, M. Fakhruddin, and F. Levy. "Electrical Transport Properties of the Pentatelluride Materials Hfte5 and Zrte5." MRS Proceedings 478 (1997). http://dx.doi.org/10.1557/proc-478-249.

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AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.
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38

Galeski, S., H. F. Legg, R. Wawrzyńczak, T. Förster, S. Zherlitsyn, D. Gorbunov, M. Uhlarz, et al. "Signatures of a magnetic-field-induced Lifshitz transition in the ultra-quantum limit of the topological semimetal ZrTe5." Nature Communications 13, no. 1 (December 1, 2022). http://dx.doi.org/10.1038/s41467-022-35106-7.

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AbstractThe quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D), which implies perfectly nested Fermi surfaces prone to instabilities. Whereas the QL typically requires unreachably strong magnetic fields, the topological semimetal ZrTe5 has been shown to reach the QL at fields of only a few Tesla. Here, we characterize the QL of ZrTe5 at fields up to 64 T by a combination of electrical-transport and ultrasound measurements. We find that the Zeeman effect in ZrTe5 enables an efficient tuning of the 1D Landau band structure with magnetic field. This results in a Lifshitz transition to a 1D Weyl regime in which perfect charge neutrality can be achieved. Since no instability-driven phase transitions destabilise the 1D electron liquid for the investigated field strengths and temperatures, our analysis establishes ZrTe5 as a thoroughly understood platform for potentially inducing more exotic interaction-driven phases at lower temperatures.
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39

Galeski, S., T. Ehmcke, R. Wawrzyńczak, P. M. Lozano, K. Cho, A. Sharma, S. Das, et al. "Origin of the quasi-quantized Hall effect in ZrTe5." Nature Communications 12, no. 1 (May 27, 2021). http://dx.doi.org/10.1038/s41467-021-23435-y.

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AbstractThe quantum Hall effect (QHE) is traditionally considered to be a purely two-dimensional (2D) phenomenon. Recently, however, a three-dimensional (3D) version of the QHE was reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, spectroscopic, thermoelectric and charge transport measurements on such ZrTe5 samples. The measured properties: magnetization, ultrasound propagation, scanning tunneling spectroscopy, and Raman spectroscopy, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response emerges from the interplay of the intrinsic properties of the ZrTe5 electronic structure and its Dirac-type semi-metallic character.
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40

Tajkov, Zoltán, Dániel Nagy, Konrád Kandrai, János Koltai, László Oroszlány, Péter Süle, Zsolt E. Horváth, Péter Vancsó, Levente Tapasztó, and Péter Nemes-Incze. "Revealing the topological phase diagram of ZrTe5 using the complex strain fields of microbubbles." npj Computational Materials 8, no. 1 (August 20, 2022). http://dx.doi.org/10.1038/s41524-022-00854-z.

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AbstractTopological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe5) is one of a few experimentally available materials that reside close to the boundary of a topological phase transition, allowing the switching of its invariant by mechanical strain. Here, we unambiguously identify a topological insulator–metal transition as a function of strain, by a combination of ab initio calculations and direct measurements of the local charge density. Our model quantitatively describes the response to complex strain patterns found in bubbles of few layer ZrTe5 without fitting parameters, reproducing the mechanical deformation-dependent closing of the band gap observed using scanning tunneling microscopy. We calculate the topological phase diagram of ZrTe5 and identify the phase at equilibrium, enabling the design of device architectures, which exploit the topological switching characteristics of the system.
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41

Konstantinova, T., L. Wu, W. G. Yin, J. Tao, G. D. Gu, X. J. Wang, Jie Yang, I. A. Zaliznyak, and Y. Zhu. "Photoinduced Dirac semimetal in ZrTe5." npj Quantum Materials 5, no. 1 (November 4, 2020). http://dx.doi.org/10.1038/s41535-020-00280-8.

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Abstract Novel phases of matter with unique properties that emerge from quantum and topological protection present an important thrust of modern research. Of particular interest is to engineer these phases on demand using ultrafast external stimuli, such as photoexcitation, which offers prospects of their integration into future devices compatible with optical communication and information technology. Here, we use MeV Ultrafast Electron Diffraction (UED) to show how a transient three-dimensional (3D) Dirac semimetal state can be induced by a femtosecond laser pulse in a topological insulator ZrTe5. We observe marked changes in Bragg diffraction, which are characteristic of bond distortions in the photoinduced state. Using the atomic positions refined from the UED, we perform density functional theory (DFT) analysis of the electronic band structure. Our results reveal that the equilibrium state of ZrTe5 is a topological insulator with a small band gap of ~ 25 meV, consistent with angle-resolved photoemission (ARPES) experiments. However, the gap is closed in the presence of strong spin-orbit coupling (SOC) in the photoinduced transient state, where massless Dirac fermions emerge in the chiral band structure. The time scale of the relaxation dynamics to the transient Dirac semimetal state is remarkably long, τ ~ 160 ps, which is two orders of magnitude longer than the conventional phonon-driven structural relaxation. The long relaxation is consistent with the vanishing density of states in Dirac spectrum and slow spin-repolarization of the SOC-controlled band structure accompanying the emergence of Dirac fermions.
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42

Littleton, R. T., Terry M. Tritt, B. Zawilski, J. W. Kolis, D. R. Ketchum, and M. Brooks Derrick. "Thermoelectric Figure of Merit, ZT, of Single Crystal Pentatellurides (MTe5-XSex: M = Hf, Zr and x = 0, 0.25)." MRS Proceedings 626 (2000). http://dx.doi.org/10.1557/proc-626-z3.1.

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ABSTRACTThe thermoelectric figure of merit, ZT = α2σT/λ, has been measured for pentatelluride single crystals of HfTe5, ZrTe5, as well as Se substituted pentatellurides. The parent materials, HfTe5 and ZrTe5, exhibit relatively large p- and n- type thermopower, |a| > 125 μV/K, and low resistivity, ρ ≤ 1 mΩ•cm. These values lead to a large power factor (α2σT) which is substantially increased with proper Se substitution on the Te sites. The thermal conductivity of these needle-like crystals has also been measured as a function of temperature from 10 K ≤ T ≤ 300 K. The room temperature figure of merit for these materials varies from ZT “0.1 for the parent materials to ZT ≈ 0.25 for Se substituted samples. These results as well as experimental procedures will be presented and discussed.
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43

Ji, Sanghyun, Sang-Eon Lee, and Myung-Hwa Jung. "Berry paramagnetism in the Dirac semimetal ZrTe5." Communications Physics 4, no. 1 (December 2021). http://dx.doi.org/10.1038/s42005-021-00773-3.

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AbstractDirac matters have attracted a lot of interest due to their unique band structure with linear band dispersions, which have great potential for technological applications. Recently, three-dimensional Dirac and Weyl semimetals have invoked distinctive phenomena originating from a non-trivial Berry phase. In this study, we prepare single crystals of TixZr1-xTe5 with a highly anisotropic Fermi surface. Our detailed electrical transport measurements reveal that the crystals show the Lifshitz transition, and Ti doping induces a band shift. Further quantum oscillation analyses demonstrate that the TixZr1-xTe5 crystals are 3D Dirac semimetals. Additionally, we observed a minimum temperature-dependent magnetic susceptibility, which is close to a peak position of electrical resistivity. This observation is interpreted in terms of the Berry paramagnetism. Our finding paves the way to determine a band topology by magnetism and also provides a platform to apply the Berry magnetism to Dirac semimetals.
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44

Tian, Yefan, Nader Ghassemi, and Joseph H. Ross. "Gap-Opening Transition in Dirac Semimetal ZrTe5." Physical Review Letters 126, no. 23 (June 11, 2021). http://dx.doi.org/10.1103/physrevlett.126.236401.

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45

Wang, Yongjian, Henry F. Legg, Thomas Bömerich, Jinhong Park, Sebastian Biesenkamp, A. A. Taskin, Markus Braden, Achim Rosch, and Yoichi Ando. "Gigantic Magnetochiral Anisotropy in the Topological Semimetal ZrTe5." Physical Review Letters 128, no. 17 (April 29, 2022). http://dx.doi.org/10.1103/physrevlett.128.176602.

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46

"(Invited) Dirac Fermions in Layered Topological Material ZrTe5." ECS Meeting Abstracts, 2017. http://dx.doi.org/10.1149/ma2017-02/29/1260.

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47

Zhang, Wenjie, Peipei Wang, Genda Gu, Xiaosong Wu, and Liyuan Zhang. "Negative longitudinal magnetothermopower in the topological semimetal ZrTe5." Physical Review B 102, no. 11 (September 22, 2020). http://dx.doi.org/10.1103/physrevb.102.115147.

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48

Monserrat, Bartomeu, and Awadhesh Narayan. "Unraveling the topology of ZrTe5 by changing temperature." Physical Review Research 1, no. 3 (December 17, 2019). http://dx.doi.org/10.1103/physrevresearch.1.033181.

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49

Li, QiYuan, YangYang Lv, JingHui Wang, Song Bao, Wei Shi, Li Zhu, WeiMin Zhao, et al. "Turning ZrTe5 into a semiconductor through atom intercalation." Science China Physics, Mechanics & Astronomy 62, no. 6 (February 25, 2019). http://dx.doi.org/10.1007/s11433-018-9329-4.

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50

Gourgout, Adrien, Maxime Leroux, Jean-Loup Smirr, Maxime Massoudzadegan, Ricardo P. S. M. Lobo, David Vignolles, Cyril Proust, et al. "Magnetic freeze-out and anomalous Hall effect in ZrTe5." npj Quantum Materials 7, no. 1 (July 2, 2022). http://dx.doi.org/10.1038/s41535-022-00478-y.

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AbstractThe ultra-quantum limit is achieved when a magnetic field confines an electron gas in its lowest spin-polarised Landau level. Here we show that in this limit, electron doped ZrTe5 shows a metal-insulator transition followed by a sign change of the Hall and Seebeck effects at low temperature. We attribute this transition to a magnetic freeze-out of charge carriers on the ionized impurities. The reduction of the charge carrier density gives way to an anomalous Hall response of the spin-polarised electrons. This behavior, at odds with the usual magnetic freeze-out scenario, occurs in this Dirac metal because of its tiny Fermi energy, extremely narrow band gap and a large g-factor. We discuss the different possible sources (intrinsic or extrinsic) for this anomalous Hall contribution.
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