Relevant bibliographies by topics / XPS

Academic literature on the topic 'XPS'

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Published: 4 June 2021
Last updated: 7 September 2024

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Journal articles on the topic "XPS"

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Khyzhun, O. Yu, Yu M. Solonin, and V. D. Dobrovolsky. "Electronic structure of hexagonal tungsten trioxide: XPS, XES, and XAS studies." Journal of Alloys and Compounds 320, no. 1 (May 2001): 1–6. http://dx.doi.org/10.1016/s0925-8388(00)01454-7.

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Ribeiro, Emerson Schwingel, Maria Suzana P. Francisco, Yoshitaka Gushikem, and José Eduardo Gonçalves. "Princípios básicos de XAS e XPS." Revista Chemkeys, no. 2 (September 17, 2018): 1–23. http://dx.doi.org/10.20396/chemkeys.v0i2.9610.

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Os princípios básicos das espectroscopias de absorção e fotoeletrônica de raios-X (XAS e XPS) e seus principais equipamentos e métodos de tratamento de dados utilizados são introduzidos. É dada ênfase aos estudos das propriedades eletrônica e estrutural de materiais inorgânicos descrevendo alguns exemplos da literatura. Essas técnicas fornecem diferentes informações. A XPS permite a investigação da superfície, sendo principalmente usada na investigação de mudanças química e estrutural dos elementos presentes na superfície do material estudado. Por outro lado, a XAS fornece informações do volume (bulk) da amostra e sonda a ordem a curto alcance ao redor do átomo de interesse. Os exemplos descritos mostram que essas técnicas são complementares na caracterização de materiais.
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Kotani, A., K. Okada, S. Tanaka, and Y. Seino. "Theory of Cu 2pcore XPS, XES and XAS in high-Tcsuperconducting materials." Physica Scripta 41, no. 4 (April 1, 1990): 569–73. http://dx.doi.org/10.1088/0031-8949/41/4/043.

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Khyzhun, O. Yu, E. A. Zhurakovsky, A. K. Sinelnichenko, and V. A. Kolyagin. "Electronic structure of tantalum subcarbides studied by XPS, XES, and XAS methods." Journal of Electron Spectroscopy and Related Phenomena 82, no. 3 (December 1996): 179–92. http://dx.doi.org/10.1016/s0368-2048(96)03057-5.

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Khyzhun, O. Yu. "XPS, XES and XAS studies of the electronic structure of tungsten oxides." Journal of Alloys and Compounds 305, no. 1-2 (June 2000): 1–6. http://dx.doi.org/10.1016/s0925-8388(00)00697-6.

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Ebel, H., M. F. Ebel, and H. Krocza. "Quantitative surface analysis by XPS and XAS." Surface and Interface Analysis 12, no. 2 (July 1988): 137–43. http://dx.doi.org/10.1002/sia.740120214.

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Mohai, M. "XPS MultiQuant: multimodel XPS quantification software." Surface and Interface Analysis 36, no. 8 (August 2004): 828–32. http://dx.doi.org/10.1002/sia.1775.

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Zampieri, G., M. Abbate, F. Prado, A. Caneiro, and E. Morikawa. "XPS and XAS spectra of CaMnO3 and LaMnO3." Physica B: Condensed Matter 320, no. 1-4 (July 2002): 51–55. http://dx.doi.org/10.1016/s0921-4526(02)00618-x.

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Nagra, Hassan, Nipon Deka, Marco Favaro, Axel Knop-Gericke, and Rik Mom. "The Chemistry of Interfacial Ions: In Situ XPS and XAS." ECS Meeting Abstracts MA2023-02, no. 55 (December 22, 2023): 2665. http://dx.doi.org/10.1149/ma2023-02552665mtgabs.

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The choice of electrolyte ions has significant impact on the performance of electrochemical systems, affecting properties such as the electrocatalytic activity and capacitance. To understand how ions influence electrochemical processes, a key step is to determine the chemical behavior of ions at the electrode-electrolyte interface. Here, I will show how X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption spectroscopy (XAS) allow one to obtain such information. Traditionally, these techniques are vacuum-based, only providing a detailed chemical analysis before or after electrochemistry. However, advanced spectro-electrochemical cell design now makes it possible to interface the vacuum needed for XPS and soft XAS with wet electrochemical environments, enabling us to study the electrode-electrolyte interface during electrocatalytic reactions. Using recent case studies from my group, I will show how operando XPS and soft XAS are able to detect the interfacial ion concentration, the hydration shell structure of the ions, and the electrostatic potential in the double layer. These insights allowed us, for example, to follow the intercalation of Na+ ions into NiFeOx and IrOx in alkaline electrolytes, and to obtain a measure of the double layer layer thickness at a RuOx electrode in 0.1 M H2SO4. Finally, I will give a perspective on how to bring operando XPS from the synchrotron to the laboratory, which will be an important step towards widespread implementation of the technology. Figure 1
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Atuchin, V. V., I. B. Troitskaia, O. Yu Khyzhun, V. L. Bekenev, and Yu M. Solonin. "Electronic Structure of h-WO3 and CuWO4 Nanocrystals, Harvesting Materials for Renewable Energy Systems and Functional Devices." Applied Mechanics and Materials 110-116 (October 2011): 2188–93. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.2188.

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— The electronic structure of hexagonal WO3 and triclinic CuWO4 nanocrystals, prospective materials for renewable energy production and functional devices, has been studied using the X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) methods. The present XPS and XES results render that the W 5d-and O 2p-like states contribute throughout the whole valence-band region of the h-WO3 and CuWO4 nanocrystalline materialls, however maximum contributions of the O 2p-like states occur in the upper, whilst the W 5d-like states in the lower portions of the valence band, respectively.
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Dissertations / Theses on the topic "XPS"

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El, Kazzi Mario. "ETUDE PAR PHOTOEMISSION (XPS & XPD) D'HETEROSTRUCTURES D'OXYDES FONCTIONNELS EPITAXIES SUR SILICIUM." Phd thesis, Ecole Centrale de Lyon, 2007. http://tel.archives-ouvertes.fr/tel-00321458.

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Cette thèse se situe dans un des axes principaux de l'INL qui a pour objectif de développer des procédés de fabrication de films minces d'oxydes monocristallins, épitaxiés sur silicium. Ces oxydes pourraient remplacer les oxydes de grille amorphes de type SiOxNy ou HfSixOyNz et répondre au cahier des charges de la « Road Map » de l'ITRS dans les futures filières CMOS sub 22nm. L'intérêt de maîtriser l'épitaxie d'oxydes sur silicium va bien au-delà de l'application au CMOS. Un tel savoir faire serait une brique technologique essentielle pour pouvoir développer des filières d'intégration monolithique sur silicium.

Dans ce contexte, l'objectif principal de ma thèse a été de mener une étude approfondie des propriétés physicochimiques et structurales de couches fines d'oxydes élaborées par Epitaxie par Jets Moléculaires (EJM) sur substrat silicium ou oxyde, en utilisant la spectroscopie de photoélectrons (XPS) et la diffraction de photoélectrons (XPD).

Nous avons étudié dans un premier temps la relaxation de films minces de LaAlO3 et de BaTiO3 épitaxiés sur des substrats de SrTiO3(001). Nous avons montré qu'au-dessous d'une certaine épaisseur critique ces deux oxydes sont contraints de façon pseudomorphiques sur SrTiO3(001). De plus nous avons clairement mis en évidence une forte augmentation de la déformation ferroélectrique pour une couche contrainte de BaTiO3.

Dans un deuxième temps, nous avons aussi étudié la croissance de LaAlO3 sur Si(001). LaAlO3 est amorphe pour des températures de croissance en dessous de 500°C. Pour des températures supérieures il y a formation de silicates à l'interface qui empêche la cristallisation. Pour surmonter cette difficulté, des procédés d'ingénierie d'interface ont été développés pour limiter les réactions interfaciales et réussir la croissance épitaxiale. Ils sont basés sur l'utilisation de couches tampons interfaciales d'oxydes comme SrO, SrTiO3 et Al2O3.

Enfin, nous avons comparé les modes de croissance et la stabilité d'interface d'Al2O3 et de Gd2O3 épitaxiés sur Si(111) et Si(001). Les résultats prouvent que la croissance de ces deux oxydes sur Si(111) a une orientation suivant [111]. Par contre sur Si(001) le mécanisme de croissance est plus complexe avec des relations d'épitaxie et des orientations inhabituelles.
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Kazzi, Mario El. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully, Ecole centrale de Lyon, 2007. http://www.theses.fr/2007ECDL0028.

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Cette thèse se situe dans un des axes principaux de l’INL qui a pour objectif de développer des procédés de fabrication de films minces d’oxydes monocristallins, épitaxiés sur silicium. Ces oxydes pourraient remplacer les oxydes de grille amorphes de type SiOxNy ou HfSixOyNz et répondre au cahier des charges de la « Road Map » de l’ITRS dans les futures filières CMOS sub 22nm. L’intérêt de maîtriser l’épitaxie d’oxydes sur silicium va bien au-delà de l’application au CMOS. Un tel savoir faire serait une brique technologique essentielle pour pouvoir développer des filières d’intégration monolithique sur silicium. Dans ce contexte, l’objectif principal de ma thèse a été de mener une étude approfondie des propriétés physicochimiques et structurales de couches fines d’oxydes élaborées par Epitaxie par Jets Moléculaires (EJM) sur substrat silicium ou oxyde, en utilisant la spectroscopie de hotoélectrons (XPS) et la diffraction de photoélectrons (XPD). Nous avons étudié dans un premier temps la relaxation de films minces de LaAlO3 et de BaTiO3 épitaxiés sur des substrats de SrTiO3(001). Nous avons montré qu'au-dessous d’une certaine épaisseur critique ces deux oxydes sont contraints de façon pseudomorphiques sur SrTiO3(001). De plus nous avons clairement mis en évidence une forte augmentation de la déformation ferroélectrique pour une couche contrainte de BaTiO3. Dans un deuxième temps, nous avons aussi étudié la croissance de LaAlO3 sur Si(001). LaAlO3 est amorphe pour des températures de croissance en dessous de 500°C. Pour des températures supérieures il y a formation de silicates à l'interface qui empêche la cristallisation. Pour surmonter cette difficulté, des procédés d’ingénierie d’interface ont été développés pour limiter les réactions interfaciales et réussir la croissance épitaxiale. Ils sont basés sur l’utilisation de couches tampons interfaciales d’oxydes comme SrO, SrTiO3 et Al2O3. Enfin, nous avons comparé les modes de croissance et la stabilité d’interface d’Al2O3 et de Gd2O3 épitaxiés sur Si(111) et Si(001). Les résultats prouvent que la croissance de ces deux oxydes sur Si(111) a une orientation suivant [111]. Par contre sur Si(001) le mécanisme de croissance est plus complexe avec des relations d’épitaxie et des orientations inhabituelles
This thesis is on one of the main INL axes, the goal of which is to develop the growth procedures of thin oxide single crystal on silicon. These oxides are meant to replace the presently used amorphous gate oxide (SiOxNy and HfSixOyNz) by a high-κ oxide in future “sub 22nm” CMOS. Besides, the interest in controlling the growth of these oxides goes far beyond this oxide gate application. This know-how would be a technological breakthrough to develop monolithic integration on silicon. In this context, the main objective of my thesis has been to study the physico-chemical and structural properties of thin oxide layers grown by Molecular Beam Epitaxy (MBE) on silicon or oxide substrate. We have used X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). First, the stress relaxation of LaAlO3 and BaTiO3 grown on SrTiO3 (001) substrate has been investigated. We have proved that below a critical thickness this two oxides can be grown pseudomorphically and that beyond a plastic relaxation occurs. In addition, we have evidenced that the ferroelectric deformation is strongly enhanced in strained BaTiO3 thin films. Second, we have studied the LaAlO3 growth on Si(001). LaAlO3 is amorphous for growth temperature below 500°C. For higher temperature, the formation of silicates at the interface prevents the crystallization. Thus, an interface engineering strategy has been set up to avoid these interfacial reactions and to succeed an epitaxial growth,. Using SrO, SrTiO3 and Al2O3 as buffer Finally, a comparison of the growth mode and interface stability has been done between Al2O3 and Gd2O3 grown either on Si(111) or Si(001) substrates. Results show that this two oxides grow along the [111] direction on Si(111). However, on Si(001), the growth mechanism is more complex leading to unusual orientations and epitaxial relationships
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Kazzi, Mario Hollinger Guy. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully : Ecole Centrale de Lyon, 2007. http://bibli.ec-lyon.fr/exl-doc/melkazzi.pdf.

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Martins, Emanuel. "X-ray spectroscopic study of the electronic structure of sulfur compounds." Thesis, Queen Mary, University of London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283717.

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FLAMENT, OLIVIER. "Etude xps des interfaces polyimide/isolant." Paris 7, 1990. http://www.theses.fr/1990PA077034.

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L'etude des interfaces, pour la comprehension des phenomenes d'adherence, entre le polyimide pmda-oda (pyromellitic dianhydride-oxydianiline) et des substrats isolants (al#2o#3 et si#3n#4) est abordee a partir de la technique xps (x-ray photoelectron spectroscopy). Une calibration du spectrometre pour l'obtention de resultats quantitatifs est prealablement effectuee, la methode permettant l'obtention de mesures quantitatives reproductibles qui tiennent compte des conditions operatoires. L'utilisation de depots de polyimide en films minces (<5 nm) a permis de mettre en evidence des differences entre des temps de recuit de 1 h et 5 h a 240#oc au niveau de l'interface polymere-substrat. En effet, parallelement a l'imidisation du polyimide, des variations importantes sont constatees dans le niveau c#1#s (diminution du pic du aux imides, apparition d'un pic supplementaire) et le niveau n#1#s (augmentation de la quantite de liaisons c=n par rapport au polyimide de reference). Ces variations sont attribuees a la formation de liaisons substrat-polymere de type al-o-c pour les substrats d'alumine. Pour les substrats de nitrure, ces changements sont significatifs pour les substrats non traites et traites par plasma o#2, alors que pour ceux ayant subi un traitement d'adherence avec la -aps (-aminopropyltriethoxysilane) aucune difference n'est revelee entre les deux types de recuit. Des tests de pelage ont ete effectues pour les differents cas. Ils mettent en evidence que le recuit prolonge du polyimide (5 h) ameliore l'adherence sur les nitrures non traites ou oxydes par plasma; ceci correlant bien avec la caracterisation par esca de liaisons substrat-polymere
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Dwyer, V. M. "Elastic scattering in quantitative Auger/XPS analysis." Thesis, University of York, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374164.

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Ferrah, Djawhar. "Etude des propriétés physico-chimiques d'interfaces par photoémission." Thesis, Ecully, Ecole centrale de Lyon, 2013. http://www.theses.fr/2013ECDL0048/document.

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L'objectif de cette thèse est d'étudier les propriétés physico-chimiques des surfaces et des interfaces des couches minces par spectroscopie de photoémission (XPS), diffraction des photoélectrons (XPD), et la photoémission résolue en temps (PTR). Les expériences sont réalisées en utilisant une source standard des rayons X AlKa à l'INL ou les rayons X mous auprès du synchrotron Soleil. La première étude sur le système Pt/ Gd203/ Si(111) a montré que le transfert de charge entre le Pt et 0 à l'interface Pt/Gd203 implique un déplacement chimique de niveau Pt4f sans modification des caractéristiques de la composante métallique des spectres XPS. L'étude XPD montre que Pt se cristallise partiellement en deux domaines : [110] Pt(111) // [110] Gd203 (111) et [101] Pt(111) / / [110] Gd203 (111). De plus, une autre phase ordonnée d'oxyde de platine Pt02 à l'interface a été observée. A travers la caractérisation de la morphologie déterminée par la technique AFM et XPD, nous avons discuté l'adhésion aux interfaces métal/oxyde. La deuxième étude traite l'évolution d'interface d'un système modèle : métal non réactive/ semi-conducteur, dépendent fortement des conditions thermodynamiques. Nous avons étudié la couche mince d'Au déposée sur le substrat Si(001) par photoémission résolue en temps (TEMPO- synchrotron Soleil). L'étude XPS, montre avant le recuit la formation de l'oxyde native Si02 sur l'heterostructure à température ambiante. La désorption de cet oxyde se produit à faible température et induit une décroissance de l'intensité des photoélectrons durant le temps de recuit. La désorption de l'oxyde Si02 et la formation de l'alliage AuSi sont responsables de la gravure et la formation des puits de forme cubique à la surface de Si due à l'activité catalytique de l'Au. La troisième étude concerne la croissance du graphène à partir de cristal de SiC(0001)- face Si par décomposition thermique. Le niveau de coeur C1s résolu en trois composantes principales sont associées au carbone de 6H-SiC, de graphène, et l'interface graphène/ 6H-SiC (0001). L'intensité de chaque composante est rapportée en fonction de l'angle polaire (azimutale) pour différents angles azimutales (polaire). Les mesures XPD fournissent des informations cristallographiques qui indiquent clairement que les feuillets de graphène sont organisés en structure graphite sur le substrat 6H-SiC (0001). Cette organisation résulte de l’effondrement de la maille de substrat. Enfin, le découplage à l'interface graphène/ 6H-SiC (0001) par l'oxygène a été étudié par XPS. La dernière étude concerne la croissance du film mince d'InP par MBE sur le substrat SrTi03 (001). L'intégration des semi-conducteurs III-V sur le Si, en utilisant la couche tampon d'oxyde SrTi03 est l'objet des intenses recherches, en raison des applications prometteuses dans le domaine de nano-optoélectronique. Les niveaux de coeur O1s, Sr3d, Ti2p, In3d, P2p ont été analysés et rapportés en fonction de l'angle azimutale à différents angles polaires. La comparaison des courbes XPD azimutales de Sr3d et In3d montre que les ilots InP sont orientées (001) avec la relation d'épitaxie; [110]InP(001 )/ / [100]! SrTi03 (001). La caractérisation morphologique par AFM montre des ilots InP facettés régulièrement dispersée à la surface
The main objective of this thesis is to study the chemical and physical properties at the surface or at the interface between thin layers by photoemission spectroscopy (XPS), photoelectron diffraction (XPD), and time resolved photoemission (PTR) . The experiments were conducted using an Alka source at INL or soft -X ray synchrotron radiation at Soleil, the French national Synchrotron facility. The first photoemission study has been performed on platinum deposited on thin Gd2(h layers grown by Molecular Bearn Epitaxy (MBE) on Si (111) substrate. The charge transfer between Pt and 0 at the interface causes a chemical shift to higher binding energies without changing the characteristic shape of the metal XPS peak. The XPD study shows that Pt is partially crystallized into two (111)-oriented do mains on Gd20 3 (111) with the in-plane epitaxial relationships [11 0] Pt (111) / / [11 0] Gd203 (111) and [101] Pt(111)/ / [11 0] Gd20 3 (111). In addition to bi-domains formation of platinum Pt (111) on Gd20 3 (111), a new ordered phase of platinum oxide Pt02 at the Pt/ Gd203 interface have been observed. The study of the background of the polar curves depending of the morphology has shown, that the film of Pt does not wet on the oxide, due to the low energy of interaction at the interface compared to the Pt thin layer. The second study has been interested to the photoemission time-resolved study of non-reactive metal / semiconductor model system. We have studied the thin layer gold (Au) growth on silicon (Si) substrate before and during annealing in TEMPO beam line (synchrotron Soleil).The XPS study, shows before annealing the formation of silicon native oxide on heterostructure at ambient temperature. The desorption of silicon oxide during annealing at low temperature induce photoemission intensity decreases with time. The desorption of oxide and alloy formation (AuSi) induce distribution of pits with cubic form at silicon surface due to gold etching activity. The third photoemission study has concerned thin films of a few layers of graphene obtained by solid-state graphitization from 6H-SiC (0001) substrates have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). The Cls core-level has been resolved into components, which have been associated with carbon from bulk SiC, carbon from graphene and carbon at the interface graphene/ 6H-SiC (0001). Then, the intensity of each of these components has been recorded as a function of polar (azimuth) angle for several azimuth (polar) angles. These XPD measurements provide crystallographic information which clearly indicates that the graphene sheets are organized in graphite-like structure on 6H-SiC(0001), an organization that results of the shrinking of the 6H-SiC (0001) lattice after Si depletion. Finally the decoupling of graphene from 6H-SiC (0001) substrate by oxygen intercalation has been studied from the XPS point of view. Finally, photoemission study has concerned thin film of InP (phosphor indium ) islands grown by Molecular Bearn Epitaxy (MBE) on SrTi03 (001) bulk substrate have been investigated by X-ray photoelectron spectroscopy and diffraction (XPS/ XPD).Integration of III-V semi-conductor on silicon wafer, via SrTi03 buffer is currently the subject of intense research because of its potentially interesting applications in future nano-optoelectronics. The Ols, Sr3d, Ti2p, In3d, and P 2p core level area have been studied as function of azimuth angle for different polar angles. Comparison of the XPD azimuth curves of Sr3d and In3d shows that islands InP are oriented (001) with an in-plane epitaxial relationship [110] InP(001 ) // [100] SrTi03 (001). AFM images shows that InP islands are regularly dispersed on the surface. Their shape is a regularly facetted half-sphere
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Blundell, Rebecca K. "XPS of quaternary ammonium and phosphonium ionic liquids." Thesis, University of Nottingham, 2016. http://eprints.nottingham.ac.uk/34589/.

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X-ray Photoelectron Spectroscopy (XPS) has been used to probe the influence of cation structure on fundamental interactions within Ionic Liquid (IL) systems. A series of tetraalkylammonium-based ILs and their phosphonium analogues have been investigated. A robust C 1s peak fitting model has been developed and described for the tetraalkylphosphonium and tetraalkylammonium families of ionic liquid, with comparisons made between the two series. Cation-anion interactions have been investigated to determine the impact of changing the cationic core from nitrogen to phosphorus on the electronic environment of the anion. Comparisons between long and short chain cationic systems, and the effect of cation conformational restriction, are also described. Additionally, a high-energy Ag Lα’ X-ray source has been utilised to probe the structure of the IL/vacuum interface using Energy-resolved XPS (ERXPS) for tetraalkylammonium- and tetraalkylphosphonium-based ILs, with comparison made to data obtained with Angle-resolved XPS (ARXPS) experiments using a standard Al Kα X-ray source. The capability of the Ag Lα’ source for IL analysis is confirmed, alongside the characterisation of previously undetected high energy core level photoelectron emissions. The effect of cation functionalisation is also studied by XPS, with a view to establish fine-tuning of charge transfer from anion to cation using electron-withdrawing substituents embedded within the alkyl side chain of the cation. Binding energy analysis indicated cation functionalisation had minimal influence on the electronic environment of the ionic head groups with respect to the non-functionalised analogues. The performance of ILs, with respect to cation functionalisation, as solvents in the Suzuki reaction is also reported in this Thesis, whereby evidence is provided for changing the nature of catalysis via cation functionalisation.
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Hung, Wing Wa. "FTIR and XPS of congruent and stoichiometric LiNbO3." HKBU Institutional Repository, 2003. http://repository.hkbu.edu.hk/etd_ra/442.

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Ishii, Masaru. "Nanofabrication and STM/XPS Studies of Automotive Model Catalysts." Thesis, University of Reading, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485372.

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Scanning Tunnelling Microscopy (STM) and X-ray Photoelectron Spectroscopy (XPS) have been used in this work at various temperatures to study the mechanism of NOx storage reaction using model catalysts based mainly on the li02 (110) and the Pt (111) surfaces. The metals Pd and 8a were deposited using metal vapour deposition (MVD». The key findings of this work are summarised below. Prior to the investigation of the 8a/Pdm02 (110) model catalyst, the NOx reactivity with the clean li02 (110) surface and Sa reactivity with li02 (110) were studied. NO and N02was adsorbed on the clean li02 (110)-(1 X2) surface in the molecule state at room temperature and dissociated 'at 373 K in the XPS. However, the amount of adsorbed NO or N02 was small, - less than 0.1 ML, and there was no evidence of or~ered structure of any reactivity between NO and li02 (110) in the STM. Upon increasing the·annealing temperature, liN was formed at 873 K by reaction of dissociated N with interstitialli3 + diffused from the bulk. On the other hand, for a small amount of 8a deposition on the li02 (110) surface, the surface was disordered, but rows of 8a were seen running in the [001] direction of the li02 substrate. Upon sintering at 1073K in UHV, a (2x2) pattern was seen in LEED that originated from the Sa, although no ordering could be seen with STM. NO and O2were adsorbed on the Pd/Sarn02 (110) model catalysts, which was prepared by the 8a deposition and then Pd deposition at 673 K. However it was less reactive due to a low NO sticking probability and it was impossible to obtain atomic resolution images of model catalysts. A new approach, using inverse catalysts, was adopted, that is, Pt (111) was used as the support and Sa was deposited at room temperature. A locally ordered (2x2) structure was obtained. In the case of the annealing temperature at 1273 K, the variety of structures were formed, which these structures might be Sa overlayer, Sa/Pt alloy and BaO. One of these structures is the banded zig-zag structure on the terrace, with the unit cell can be defined as (8 ~ J. After the introduction of O2 at· 573 K, large scale images of BaO were obtained. The average spacing is - 8.6 A, twice that expected for the (111) plane of BaO, which is due to reconstruction, resulting in the formation of (2x2) structure. There was a metastable state of a top layer of BaO/Pt (111) model catalyst at 573 K in the presence of O2, which is likely to be due to the formation of Ba02 confirmed by the atomic structure of Ba02 in the STM. Upon dosing NO and O2 at 573 K, the BaO particles grew and some growth was confirmed at step edges, especially O2 rich state. This effect is observed by an approximate increase in particle volume of 100%, which is consistent with about half of the oxide being converted to the nitrate. It is therefore postulated that a film of the nitrate effectively encapSUlates the oxide. This surface is unreactive to S02' However, when both S02 and O2 were co-dosed, the , ; atomic structure of BaO has rapidly disappeared which might be converted to the SUlphate, 8aS04, Which would result in poisoning of the real catalyst.
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Books on the topic "XPS"

1

Crist, B. Vincent. Handbook of monochromatic XPS spectra. Chichester: John Wiley, 2000.

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National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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Puppe, Frank, ed. XPS-99: Knowledge-Based Systems. Survey and Future Directions. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/b72142.

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1948-, Briggs D., ed. High resolution XPS of organic polymers: The Scienta ESCA300 database. Chichester [England]: Wiley, 1992.

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V, Pepper Stephen, and United States. National Aeronautics and Space Administration., eds. Interfacial chemistry of a perfluoropolyether lubricant studied by XPS and TDS. [Washington, DC: National Aeronautics and Space Administration, 1992.

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IBM Data Management Solutions Education Services. Working with IBM Informix XPS 8.40 features: Course 765, version 2. [United States?]: IBM, 2002.

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Petkovic, Dus an. INFORMIX-Universal-Server: Das objekt-relationale Datenbanksystem, mit OnLine-XPS und ODS. Bonn: Addison-Wesley-Longman, 1997.

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Deutsche Tagung Expertensysteme (2nd 1993 Hamburg, Germany). Expertensysteme 93: 2. Deutsche Tagung Expertensysteme (XPS-93), Hamburg, 17.-19. Februar 1993. Berlin: Springer-Verlag, 1993.

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Book chapters on the topic "XPS"

1

Gooch, Jan W. "XPS." In Encyclopedic Dictionary of Polymers, 817. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_12921.

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Bauch, Jürgen, and Rüdiger Rosenkranz. "XPS - Röntgenphotoelektronenspektroskopie." In Physikalische Werkstoffdiagnostik, 68–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53952-1_34.

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Mittelbach, Henning. "Expert Systems XPS." In TURBO-PASCAL in Beispielen, 195–212. Wiesbaden: Vieweg+Teubner Verlag, 1997. http://dx.doi.org/10.1007/978-3-322-87185-5_11.

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Monkman, A. P., D. Bloor, G. C. Stevens, and J. C. H. Stevens. "XPS Studies of Polyaniline." In Springer Series in Solid-State Sciences, 295–300. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83833-0_55.

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Khyzhun, O. Yu, Yu M. Solonin, and V. D. Dobrovolsky. "Electronic Structure of HyWO3 and WOx Studied by the XPS, XES, and XAS Methods." In Hydrogen Materials Science and Chemistry of Metal Hydrides, 405–14. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0558-6_39.

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Bubert, Henning, John C. Rivière, and Wolfgang S. M. Werner. "X-Ray Photoelectron Spectroscopy (XPS)." In Surface and Thin Film Analysis, 7–41. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch2.

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Tyson, Herb. "Publishing as PDF and XPS." In Microsoft® Word 2010 Bible, 489–96. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118983966.ch29.

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Qu, Jun, and Harry M. Meyer. "X-Ray Photoelectron Spectroscopy (XPS)." In Encyclopedia of Tribology, 4133–38. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_1222.

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Andrade, Joseph D. "X-ray Photoelectron Spectroscopy (XPS)." In Surface and Interfacial Aspects of Biomedical Polymers, 105–95. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_5.

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Vedrine, J. C. "Photoelectron Spectroscopies: XPS and UPS." In Catalyst Characterization, 467–96. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4757-9589-9_17.

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Conference papers on the topic "XPS"

1

Gerber, Bob. "Informix online XPS." In the 1995 ACM SIGMOD international conference. New York, New York, USA: ACM Press, 1995. http://dx.doi.org/10.1145/223784.223877.

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Liu, Li, and Wenting Xv. "XPS study on epoxy/Ni interface." In High Density Packaging (ICEPT-HDP). IEEE, 2009. http://dx.doi.org/10.1109/icept.2009.5270603.

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Holzinger, Michael. "Characterization of oxidized SWCNTs by XPS." In STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES: XVI International Winterschool on Electronic Properties of Novel Materials. AIP, 2002. http://dx.doi.org/10.1063/1.1514082.

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Rodrigue, D., J. Riga, and J. J. Verbist. "XPS study of the leucoemeraldine stability." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834831.

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HATTORI, Takeo. "XPS Studies on Oxidation of Si." In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.a-1-1.

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HATTORI, Takeo. "XPS Characterization of SiO2/Si Interfaces." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-v-2.

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Kennemore, Charles M., and Ursula J. Gibson. "XPS analysis of IAD fluoride films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mq2.

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Investigation of the core electron binding energies by x-ray photoelectron spectroscopy (XPS) allows the determination not only of the elemental composition of the film but also the detection of the various compounds of the constituent elements due to the measurable shift in the electron binding energies associated with chemical bonding.
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Luzhnyi, Ivan, Egor Shcherbakov, Tetyana Bystrenko, Oleksiy Bystrenko, and Oleg Khyzhun. "Electronic structure of cubic and rhombohedral tantalum carbide phases: DFT calculations and X-ray photoelectron and X-ray emission spectroscopy measurements." In IXth INTERNATIONAL SAMSONOV CONFERENCE “MATERIALS SCIENCE OF REFRACTORY COMPOUNDS”. Frantsevich Ukrainian Materials Research Society, 2024. http://dx.doi.org/10.62564/m4-il2004.

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Transition metal (TM) carbides are generally nonstoichiometric compounds crystallized within high-symmetry FCC and HCP structures. Carbides based on refractory metals of the IVb - VIb groups are of great importance for scientists and engineers because of their possibility to form intermediate phases in the region of compounds between MC phases (which crystallize in the FCC structure) and M₂C phases with HCP structure. Such intermediate carbide phases are superstructures. Unit cells of these superstructures are described in hexagonal or rhombohedral (trigonal) systems and are characterized by large values of hexagonal lattice parameter ratio [1]. In the present work we study from both experimental and theoretical approaches the electronic structure of cubic TaCₓ phases (x = 0.98 and 0.75) and rhombohedral Ta₄C₃ (C/M=0.74) and Ta₃C₂ (C/M=0.67) phases synthesized following the technique [2]. In particular, we have measured energy distributions of the C 2p- and Ta 5d-electronic states and determined experimentally the valence-band structures employing X-ray emission spectroscopy (XES) and X-ray photoelectron spectroscopy (XPS) measurements, respectively. Furthermore, the present XES and XPS data are verified theoretically by first-principles calculations of total and partial densities of states that are made using the Quantum Espresso software package. We have achieved good correspondence between the experimental and theoretical data in the present work. The present results indicate that, in the sequence TaC₀.₉₈→TaC₀.₇₅→Ta₄C₃→Ta₃C₂ the main maximum of the XPS valence-band spectra shift toward the Fermi energy. In all studied tantalum carbides, a strong hybridization between Ta 5d- and C 2p-electronic states is detected and the charge transfer occurs from tantalum atoms to carbon atoms.
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Hossain, Mainul, Ganesh Subramanian, Dina Triyoso, Jeremy Wahl, Timothy Mcardle, Alok Vaid, A. F. Bello, et al. "XPS-XRF hybrid metrology enabling FDSOI process." In SPIE Advanced Lithography, edited by Martha I. Sanchez and Vladimir A. Ukraintsev. SPIE, 2016. http://dx.doi.org/10.1117/12.2219748.

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Sharma, Shivani, and N. P. Lalla. "XPS studies on B-site disordered SrTi0.5Mn0.5O3." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980563.

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Reports on the topic "XPS"

1

Holm, A., T. Ozawa, S. Kauzlarich, S. Morton, G. Waddill, W. Pickett, and J. Tobin. XPS Studies of Yb14MnSb11 and Yb14ZnSb11. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/15009723.

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Kelly, Dan. XPS analysis of nikki N111 catalyst pellets. Office of Scientific and Technical Information (OSTI), March 2007. http://dx.doi.org/10.2172/1248092.

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Strunskus, T., C. Hahn, D. Frankel, and M. Grunze. Degradation of Pyromellitic Dianhydride during XPS Analysis. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada237882.

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Wagner, C. D. NIST x-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: National Bureau of Standards, 1990. http://dx.doi.org/10.6028/nist.tn.1289.

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Cox, L. E., J. M. Peek, and J. W. Allen. Pu 4f XPS spectra analyzed in the Anderson impurity model. Office of Scientific and Technical Information (OSTI), May 1998. http://dx.doi.org/10.2172/296778.

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Kelly, Daniel, and April Dawn Longhair. XPS and IR Characterization of Ultra-High Molecular Weight Polyethylene. Office of Scientific and Technical Information (OSTI), May 2015. http://dx.doi.org/10.2172/1179842.

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Brown, J. R. Surface chemistry of two nova husky catalysts by XPS and AES/SAM. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1990. http://dx.doi.org/10.4095/304485.

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Brown, J. R., M. Kasrai, and G. M. Bancroft. Application of direct surface sensitive x-ray (XPS/XAS) and electron (AES/SAM) spectroscopic techniques to coal and the fossil fuel cycle. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1991. http://dx.doi.org/10.4095/304492.

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Brown, J. R. A semi-quantitative XPS study of model Co/Mo-alumina hydrotreating refinery catalysts. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1986. http://dx.doi.org/10.4095/302651.

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Gellman, Andrew J. High Resolution XPS Analysis of New Lubricants and Materials for Tribology Under Extreme Conditions. Fort Belvoir, VA: Defense Technical Information Center, March 2001. http://dx.doi.org/10.21236/ada387893.

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