Academic literature on the topic 'XPS'
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Journal articles on the topic "XPS"
Khyzhun, O. Yu, Yu M. Solonin, and V. D. Dobrovolsky. "Electronic structure of hexagonal tungsten trioxide: XPS, XES, and XAS studies." Journal of Alloys and Compounds 320, no. 1 (May 2001): 1–6. http://dx.doi.org/10.1016/s0925-8388(00)01454-7.
Full textRibeiro, Emerson Schwingel, Maria Suzana P. Francisco, Yoshitaka Gushikem, and José Eduardo Gonçalves. "Princípios básicos de XAS e XPS." Revista Chemkeys, no. 2 (September 17, 2018): 1–23. http://dx.doi.org/10.20396/chemkeys.v0i2.9610.
Full textKotani, A., K. Okada, S. Tanaka, and Y. Seino. "Theory of Cu 2pcore XPS, XES and XAS in high-Tcsuperconducting materials." Physica Scripta 41, no. 4 (April 1, 1990): 569–73. http://dx.doi.org/10.1088/0031-8949/41/4/043.
Full textKhyzhun, O. Yu, E. A. Zhurakovsky, A. K. Sinelnichenko, and V. A. Kolyagin. "Electronic structure of tantalum subcarbides studied by XPS, XES, and XAS methods." Journal of Electron Spectroscopy and Related Phenomena 82, no. 3 (December 1996): 179–92. http://dx.doi.org/10.1016/s0368-2048(96)03057-5.
Full textKhyzhun, O. Yu. "XPS, XES and XAS studies of the electronic structure of tungsten oxides." Journal of Alloys and Compounds 305, no. 1-2 (June 2000): 1–6. http://dx.doi.org/10.1016/s0925-8388(00)00697-6.
Full textEbel, H., M. F. Ebel, and H. Krocza. "Quantitative surface analysis by XPS and XAS." Surface and Interface Analysis 12, no. 2 (July 1988): 137–43. http://dx.doi.org/10.1002/sia.740120214.
Full textMohai, M. "XPS MultiQuant: multimodel XPS quantification software." Surface and Interface Analysis 36, no. 8 (August 2004): 828–32. http://dx.doi.org/10.1002/sia.1775.
Full textZampieri, G., M. Abbate, F. Prado, A. Caneiro, and E. Morikawa. "XPS and XAS spectra of CaMnO3 and LaMnO3." Physica B: Condensed Matter 320, no. 1-4 (July 2002): 51–55. http://dx.doi.org/10.1016/s0921-4526(02)00618-x.
Full textNagra, Hassan, Nipon Deka, Marco Favaro, Axel Knop-Gericke, and Rik Mom. "The Chemistry of Interfacial Ions: In Situ XPS and XAS." ECS Meeting Abstracts MA2023-02, no. 55 (December 22, 2023): 2665. http://dx.doi.org/10.1149/ma2023-02552665mtgabs.
Full textAtuchin, V. V., I. B. Troitskaia, O. Yu Khyzhun, V. L. Bekenev, and Yu M. Solonin. "Electronic Structure of h-WO3 and CuWO4 Nanocrystals, Harvesting Materials for Renewable Energy Systems and Functional Devices." Applied Mechanics and Materials 110-116 (October 2011): 2188–93. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.2188.
Full textDissertations / Theses on the topic "XPS"
El, Kazzi Mario. "ETUDE PAR PHOTOEMISSION (XPS & XPD) D'HETEROSTRUCTURES D'OXYDES FONCTIONNELS EPITAXIES SUR SILICIUM." Phd thesis, Ecole Centrale de Lyon, 2007. http://tel.archives-ouvertes.fr/tel-00321458.
Full textDans ce contexte, l'objectif principal de ma thèse a été de mener une étude approfondie des propriétés physicochimiques et structurales de couches fines d'oxydes élaborées par Epitaxie par Jets Moléculaires (EJM) sur substrat silicium ou oxyde, en utilisant la spectroscopie de photoélectrons (XPS) et la diffraction de photoélectrons (XPD).
Nous avons étudié dans un premier temps la relaxation de films minces de LaAlO3 et de BaTiO3 épitaxiés sur des substrats de SrTiO3(001). Nous avons montré qu'au-dessous d'une certaine épaisseur critique ces deux oxydes sont contraints de façon pseudomorphiques sur SrTiO3(001). De plus nous avons clairement mis en évidence une forte augmentation de la déformation ferroélectrique pour une couche contrainte de BaTiO3.
Dans un deuxième temps, nous avons aussi étudié la croissance de LaAlO3 sur Si(001). LaAlO3 est amorphe pour des températures de croissance en dessous de 500°C. Pour des températures supérieures il y a formation de silicates à l'interface qui empêche la cristallisation. Pour surmonter cette difficulté, des procédés d'ingénierie d'interface ont été développés pour limiter les réactions interfaciales et réussir la croissance épitaxiale. Ils sont basés sur l'utilisation de couches tampons interfaciales d'oxydes comme SrO, SrTiO3 et Al2O3.
Enfin, nous avons comparé les modes de croissance et la stabilité d'interface d'Al2O3 et de Gd2O3 épitaxiés sur Si(111) et Si(001). Les résultats prouvent que la croissance de ces deux oxydes sur Si(111) a une orientation suivant [111]. Par contre sur Si(001) le mécanisme de croissance est plus complexe avec des relations d'épitaxie et des orientations inhabituelles.
Kazzi, Mario El. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully, Ecole centrale de Lyon, 2007. http://www.theses.fr/2007ECDL0028.
Full textThis thesis is on one of the main INL axes, the goal of which is to develop the growth procedures of thin oxide single crystal on silicon. These oxides are meant to replace the presently used amorphous gate oxide (SiOxNy and HfSixOyNz) by a high-κ oxide in future “sub 22nm” CMOS. Besides, the interest in controlling the growth of these oxides goes far beyond this oxide gate application. This know-how would be a technological breakthrough to develop monolithic integration on silicon. In this context, the main objective of my thesis has been to study the physico-chemical and structural properties of thin oxide layers grown by Molecular Beam Epitaxy (MBE) on silicon or oxide substrate. We have used X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). First, the stress relaxation of LaAlO3 and BaTiO3 grown on SrTiO3 (001) substrate has been investigated. We have proved that below a critical thickness this two oxides can be grown pseudomorphically and that beyond a plastic relaxation occurs. In addition, we have evidenced that the ferroelectric deformation is strongly enhanced in strained BaTiO3 thin films. Second, we have studied the LaAlO3 growth on Si(001). LaAlO3 is amorphous for growth temperature below 500°C. For higher temperature, the formation of silicates at the interface prevents the crystallization. Thus, an interface engineering strategy has been set up to avoid these interfacial reactions and to succeed an epitaxial growth,. Using SrO, SrTiO3 and Al2O3 as buffer Finally, a comparison of the growth mode and interface stability has been done between Al2O3 and Gd2O3 grown either on Si(111) or Si(001) substrates. Results show that this two oxides grow along the [111] direction on Si(111). However, on Si(001), the growth mechanism is more complex leading to unusual orientations and epitaxial relationships
Kazzi, Mario Hollinger Guy. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully : Ecole Centrale de Lyon, 2007. http://bibli.ec-lyon.fr/exl-doc/melkazzi.pdf.
Full textMartins, Emanuel. "X-ray spectroscopic study of the electronic structure of sulfur compounds." Thesis, Queen Mary, University of London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283717.
Full textFLAMENT, OLIVIER. "Etude xps des interfaces polyimide/isolant." Paris 7, 1990. http://www.theses.fr/1990PA077034.
Full textDwyer, V. M. "Elastic scattering in quantitative Auger/XPS analysis." Thesis, University of York, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374164.
Full textFerrah, Djawhar. "Etude des propriétés physico-chimiques d'interfaces par photoémission." Thesis, Ecully, Ecole centrale de Lyon, 2013. http://www.theses.fr/2013ECDL0048/document.
Full textThe main objective of this thesis is to study the chemical and physical properties at the surface or at the interface between thin layers by photoemission spectroscopy (XPS), photoelectron diffraction (XPD), and time resolved photoemission (PTR) . The experiments were conducted using an Alka source at INL or soft -X ray synchrotron radiation at Soleil, the French national Synchrotron facility. The first photoemission study has been performed on platinum deposited on thin Gd2(h layers grown by Molecular Bearn Epitaxy (MBE) on Si (111) substrate. The charge transfer between Pt and 0 at the interface causes a chemical shift to higher binding energies without changing the characteristic shape of the metal XPS peak. The XPD study shows that Pt is partially crystallized into two (111)-oriented do mains on Gd20 3 (111) with the in-plane epitaxial relationships [11 0] Pt (111) / / [11 0] Gd203 (111) and [101] Pt(111)/ / [11 0] Gd20 3 (111). In addition to bi-domains formation of platinum Pt (111) on Gd20 3 (111), a new ordered phase of platinum oxide Pt02 at the Pt/ Gd203 interface have been observed. The study of the background of the polar curves depending of the morphology has shown, that the film of Pt does not wet on the oxide, due to the low energy of interaction at the interface compared to the Pt thin layer. The second study has been interested to the photoemission time-resolved study of non-reactive metal / semiconductor model system. We have studied the thin layer gold (Au) growth on silicon (Si) substrate before and during annealing in TEMPO beam line (synchrotron Soleil).The XPS study, shows before annealing the formation of silicon native oxide on heterostructure at ambient temperature. The desorption of silicon oxide during annealing at low temperature induce photoemission intensity decreases with time. The desorption of oxide and alloy formation (AuSi) induce distribution of pits with cubic form at silicon surface due to gold etching activity. The third photoemission study has concerned thin films of a few layers of graphene obtained by solid-state graphitization from 6H-SiC (0001) substrates have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). The Cls core-level has been resolved into components, which have been associated with carbon from bulk SiC, carbon from graphene and carbon at the interface graphene/ 6H-SiC (0001). Then, the intensity of each of these components has been recorded as a function of polar (azimuth) angle for several azimuth (polar) angles. These XPD measurements provide crystallographic information which clearly indicates that the graphene sheets are organized in graphite-like structure on 6H-SiC(0001), an organization that results of the shrinking of the 6H-SiC (0001) lattice after Si depletion. Finally the decoupling of graphene from 6H-SiC (0001) substrate by oxygen intercalation has been studied from the XPS point of view. Finally, photoemission study has concerned thin film of InP (phosphor indium ) islands grown by Molecular Bearn Epitaxy (MBE) on SrTi03 (001) bulk substrate have been investigated by X-ray photoelectron spectroscopy and diffraction (XPS/ XPD).Integration of III-V semi-conductor on silicon wafer, via SrTi03 buffer is currently the subject of intense research because of its potentially interesting applications in future nano-optoelectronics. The Ols, Sr3d, Ti2p, In3d, and P 2p core level area have been studied as function of azimuth angle for different polar angles. Comparison of the XPD azimuth curves of Sr3d and In3d shows that islands InP are oriented (001) with an in-plane epitaxial relationship [110] InP(001 ) // [100] SrTi03 (001). AFM images shows that InP islands are regularly dispersed on the surface. Their shape is a regularly facetted half-sphere
Blundell, Rebecca K. "XPS of quaternary ammonium and phosphonium ionic liquids." Thesis, University of Nottingham, 2016. http://eprints.nottingham.ac.uk/34589/.
Full textHung, Wing Wa. "FTIR and XPS of congruent and stoichiometric LiNbO3." HKBU Institutional Repository, 2003. http://repository.hkbu.edu.hk/etd_ra/442.
Full textIshii, Masaru. "Nanofabrication and STM/XPS Studies of Automotive Model Catalysts." Thesis, University of Reading, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485372.
Full textBooks on the topic "XPS"
Crist, B. Vincent. Handbook of monochromatic XPS spectra. Chichester: John Wiley, 2000.
Find full textNational Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Find full textNational Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Find full textNational Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.
Find full textPuppe, Frank, ed. XPS-99: Knowledge-Based Systems. Survey and Future Directions. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/b72142.
Full text1948-, Briggs D., ed. High resolution XPS of organic polymers: The Scienta ESCA300 database. Chichester [England]: Wiley, 1992.
Find full textV, Pepper Stephen, and United States. National Aeronautics and Space Administration., eds. Interfacial chemistry of a perfluoropolyether lubricant studied by XPS and TDS. [Washington, DC: National Aeronautics and Space Administration, 1992.
Find full textIBM Data Management Solutions Education Services. Working with IBM Informix XPS 8.40 features: Course 765, version 2. [United States?]: IBM, 2002.
Find full textPetkovic, Dus an. INFORMIX-Universal-Server: Das objekt-relationale Datenbanksystem, mit OnLine-XPS und ODS. Bonn: Addison-Wesley-Longman, 1997.
Find full textDeutsche Tagung Expertensysteme (2nd 1993 Hamburg, Germany). Expertensysteme 93: 2. Deutsche Tagung Expertensysteme (XPS-93), Hamburg, 17.-19. Februar 1993. Berlin: Springer-Verlag, 1993.
Find full textBook chapters on the topic "XPS"
Gooch, Jan W. "XPS." In Encyclopedic Dictionary of Polymers, 817. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_12921.
Full textBauch, Jürgen, and Rüdiger Rosenkranz. "XPS - Röntgenphotoelektronenspektroskopie." In Physikalische Werkstoffdiagnostik, 68–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53952-1_34.
Full textMittelbach, Henning. "Expert Systems XPS." In TURBO-PASCAL in Beispielen, 195–212. Wiesbaden: Vieweg+Teubner Verlag, 1997. http://dx.doi.org/10.1007/978-3-322-87185-5_11.
Full textMonkman, A. P., D. Bloor, G. C. Stevens, and J. C. H. Stevens. "XPS Studies of Polyaniline." In Springer Series in Solid-State Sciences, 295–300. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83833-0_55.
Full textKhyzhun, O. Yu, Yu M. Solonin, and V. D. Dobrovolsky. "Electronic Structure of HyWO3 and WOx Studied by the XPS, XES, and XAS Methods." In Hydrogen Materials Science and Chemistry of Metal Hydrides, 405–14. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0558-6_39.
Full textBubert, Henning, John C. Rivière, and Wolfgang S. M. Werner. "X-Ray Photoelectron Spectroscopy (XPS)." In Surface and Thin Film Analysis, 7–41. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch2.
Full textTyson, Herb. "Publishing as PDF and XPS." In Microsoft® Word 2010 Bible, 489–96. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118983966.ch29.
Full textQu, Jun, and Harry M. Meyer. "X-Ray Photoelectron Spectroscopy (XPS)." In Encyclopedia of Tribology, 4133–38. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_1222.
Full textAndrade, Joseph D. "X-ray Photoelectron Spectroscopy (XPS)." In Surface and Interfacial Aspects of Biomedical Polymers, 105–95. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_5.
Full textVedrine, J. C. "Photoelectron Spectroscopies: XPS and UPS." In Catalyst Characterization, 467–96. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4757-9589-9_17.
Full textConference papers on the topic "XPS"
Gerber, Bob. "Informix online XPS." In the 1995 ACM SIGMOD international conference. New York, New York, USA: ACM Press, 1995. http://dx.doi.org/10.1145/223784.223877.
Full textLiu, Li, and Wenting Xv. "XPS study on epoxy/Ni interface." In High Density Packaging (ICEPT-HDP). IEEE, 2009. http://dx.doi.org/10.1109/icept.2009.5270603.
Full textHolzinger, Michael. "Characterization of oxidized SWCNTs by XPS." In STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES: XVI International Winterschool on Electronic Properties of Novel Materials. AIP, 2002. http://dx.doi.org/10.1063/1.1514082.
Full textRodrigue, D., J. Riga, and J. J. Verbist. "XPS study of the leucoemeraldine stability." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834831.
Full textHATTORI, Takeo. "XPS Studies on Oxidation of Si." In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.a-1-1.
Full textHATTORI, Takeo. "XPS Characterization of SiO2/Si Interfaces." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-v-2.
Full textKennemore, Charles M., and Ursula J. Gibson. "XPS analysis of IAD fluoride films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mq2.
Full textLuzhnyi, Ivan, Egor Shcherbakov, Tetyana Bystrenko, Oleksiy Bystrenko, and Oleg Khyzhun. "Electronic structure of cubic and rhombohedral tantalum carbide phases: DFT calculations and X-ray photoelectron and X-ray emission spectroscopy measurements." In IXth INTERNATIONAL SAMSONOV CONFERENCE “MATERIALS SCIENCE OF REFRACTORY COMPOUNDS”. Frantsevich Ukrainian Materials Research Society, 2024. http://dx.doi.org/10.62564/m4-il2004.
Full textHossain, Mainul, Ganesh Subramanian, Dina Triyoso, Jeremy Wahl, Timothy Mcardle, Alok Vaid, A. F. Bello, et al. "XPS-XRF hybrid metrology enabling FDSOI process." In SPIE Advanced Lithography, edited by Martha I. Sanchez and Vladimir A. Ukraintsev. SPIE, 2016. http://dx.doi.org/10.1117/12.2219748.
Full textSharma, Shivani, and N. P. Lalla. "XPS studies on B-site disordered SrTi0.5Mn0.5O3." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980563.
Full textReports on the topic "XPS"
Holm, A., T. Ozawa, S. Kauzlarich, S. Morton, G. Waddill, W. Pickett, and J. Tobin. XPS Studies of Yb14MnSb11 and Yb14ZnSb11. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/15009723.
Full textKelly, Dan. XPS analysis of nikki N111 catalyst pellets. Office of Scientific and Technical Information (OSTI), March 2007. http://dx.doi.org/10.2172/1248092.
Full textStrunskus, T., C. Hahn, D. Frankel, and M. Grunze. Degradation of Pyromellitic Dianhydride during XPS Analysis. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada237882.
Full textWagner, C. D. NIST x-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: National Bureau of Standards, 1990. http://dx.doi.org/10.6028/nist.tn.1289.
Full textCox, L. E., J. M. Peek, and J. W. Allen. Pu 4f XPS spectra analyzed in the Anderson impurity model. Office of Scientific and Technical Information (OSTI), May 1998. http://dx.doi.org/10.2172/296778.
Full textKelly, Daniel, and April Dawn Longhair. XPS and IR Characterization of Ultra-High Molecular Weight Polyethylene. Office of Scientific and Technical Information (OSTI), May 2015. http://dx.doi.org/10.2172/1179842.
Full textBrown, J. R. Surface chemistry of two nova husky catalysts by XPS and AES/SAM. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1990. http://dx.doi.org/10.4095/304485.
Full textBrown, J. R., M. Kasrai, and G. M. Bancroft. Application of direct surface sensitive x-ray (XPS/XAS) and electron (AES/SAM) spectroscopic techniques to coal and the fossil fuel cycle. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1991. http://dx.doi.org/10.4095/304492.
Full textBrown, J. R. A semi-quantitative XPS study of model Co/Mo-alumina hydrotreating refinery catalysts. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1986. http://dx.doi.org/10.4095/302651.
Full textGellman, Andrew J. High Resolution XPS Analysis of New Lubricants and Materials for Tribology Under Extreme Conditions. Fort Belvoir, VA: Defense Technical Information Center, March 2001. http://dx.doi.org/10.21236/ada387893.
Full text