Relevant bibliographies by topics / X-ray Photoemission Spectroscopy (XPS)

Academic literature on the topic 'X-ray Photoemission Spectroscopy (XPS)'

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Published: 11 March 2023

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Journal articles on the topic "X-ray Photoemission Spectroscopy (XPS)"

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Ekanayaka, Thilini K., Hannah Kurz, Kayleigh A. McElveen, Guanhua Hao, Esha Mishra, Alpha T. N’Diaye, Rebecca Y. Lai, Birgit Weber, and Peter A. Dowben. "Evidence for surface effects on the intermolecular interactions in Fe(ii) spin crossover coordination polymers." Physical Chemistry Chemical Physics 24, no. 2 (2022): 883–94. http://dx.doi.org/10.1039/d1cp04243b.

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From X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS) it is evident that the spin state transition behavior of Fe(ii) spin crossover coordination polymer crystallites at the surface differs from the bulk.
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Zhang, Hong-Guang, Yong-Tao Li, Liang Xie, Xue-Guang Dong, and Qi Li. "Annealing temperature dependence of local atomic and electronic structure of polycrystalline La0.5Sr0.5MnO3." International Journal of Modern Physics B 29, no. 03 (January 26, 2015): 1550006. http://dx.doi.org/10.1142/s021797921550006x.

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The local atomic and electronic structure of La 0.5 Sr 0.5 MnO 3 was investigated at different annealing temperatures (TA) by X-ray absorption spectroscopy (XAS) and photoemission spectroscopy (XPS). The extended X-ray absorption fine structure indicates that the MnO 6 octahedral distortion is reduced by increasing TA. The chemical shift for the sample with TA = 1350° C measured by XPS of Mn 2p core level demonstrates the increasing of Mn 3+ ions content. From the deconvolution of valence band photoemission spectra, the number of eg electron is also proved to increase with increasing TA. It is also demonstrated that there is a strongest hybridization between O 2p and surrounding atomic orbital states in sample with TA = 1350° C , which is consistent with valence band photoemission.
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Favaro, Marco, Mattia Cattelan, Stephen W. T. Price, Andrea E. Russell, Laura Calvillo, Stefano Agnoli, and Gaetano Granozzi. "In Situ Study of Graphene Oxide Quantum Dot-MoSx Nanohybrids as Hydrogen Evolution Catalysts." Surfaces 3, no. 2 (June 16, 2020): 225–36. http://dx.doi.org/10.3390/surfaces3020017.

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Graphene quantum dots (GOQDs)-MoSx nanohybrids with different MoSx stoichiometries (x = 2 and 3) were prepared in order to investigate their chemical stability under hydrogen evolution reaction (HER) conditions. Combined photoemission/electrochemical (XPS/EC) measurements and operando X-ray absorption spectroscopy (XAS) were employed to determine the chemical changes induced on the MoSx-based materials as a function of the applied potential. This in situ characterization indicates that both MoS2 and MoS3 materials are stable under operating conditions, although sulfur terminal sites in the MoS3 nanoparticles are converted from S-dimer (S22−) to S-monomer (S2−), which constitute the first sites where the hydrogen atoms are adsorbed for their subsequent evolution. In order to complete the characterization of the GOQDs-MoSx nanohybrids, the composition and particle size were determined by X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD) and Raman spectroscopy; whereas the HER activity was studied by conventional electrochemical techniques.
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Zhu, Menglong, Lu Lyu, Dongmei Niu, Hong Zhang, Shitan Wang, and Yongli Gao. "Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film." RSC Advances 6, no. 113 (2016): 112403–8. http://dx.doi.org/10.1039/c6ra23981a.

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The effect of a MoO3 buffer layer inserted between 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS).
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Petraki, Fotini, Heiko Peisert, Johannes Uihlein, Umut Aygül, and Thomas Chassé. "CoPc and CoPcF16 on gold: Site-specific charge-transfer processes." Beilstein Journal of Nanotechnology 5 (April 25, 2014): 524–31. http://dx.doi.org/10.3762/bjnano.5.61.

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Interface properties of cobalt(II) phthalocyanine (CoPc) and cobalt(II) hexadecafluoro-phthalocyanine (CoPcF16) to gold are investigated by photo-excited electron spectroscopies (X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and X-ray excited Auger electron spectroscopy (XAES)). It is shown that a bidirectional charge transfer determines the interface energetics for CoPc and CoPcF16 on Au. Combined XPS and XAES measurements allow for the separation of chemical shifts based on different local charges at the considered atom caused by polarization effects. This facilitates a detailed discussion of energetic shifts of core level spectra. The data allow the discussion of site-specific charge-transfer processes.
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El Jamal, Ghada, Thomas Gouder, Rachel Eloirdi, and Mats Jonsson. "Time-dependent surface modification of uranium oxides exposed to water plasma." Dalton Transactions 50, no. 14 (2021): 4796–804. http://dx.doi.org/10.1039/d1dt00486g.

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The dynamics of water plasma induced redox changes in UO2 films are monitered with X-Ray photoelectron Photoemission (XPS) and Ultra-Violet Photoemission (UPS) spectroscopy as a function of exposure time.
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Cha, Myung Joo, Yu Jung Park, Jung Hwa Seo, and Bright Walker. "Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction." Physical Chemistry Chemical Physics 21, no. 27 (2019): 14541–45. http://dx.doi.org/10.1039/c9cp00834a.

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The electronic properties of the interface between Au and the lead halide perovskite (CH3NH3PbI3−xClx) were investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).
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Irfan, Franky So, and Yongli Gao. "Photoemission Spectroscopy Characterization of Attempts to Deposit MoO2Thin Film." International Journal of Photoenergy 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/314702.

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Attempts to deposit molybdenum dioxide (MoO2) thin films have been described. Electronic structure of films, deposited by thermal evaporation of MoO2powder, had been investigated with ultraviolet photoemission and X-ray photoemission spectroscopy (UPS and XPS). The thermally evaporated films were found to be similar to the thermally evaporated MoO3films at the early deposition stage. XPS analysis of MoO2powder reveals presence of +5 and +6 oxidation states in Mo 3d core level along with +4 state. The residue of MoO2powder indicates substantial reduction in higher oxidation states while keeping +4 oxidation state almost intact. Interface formation between chloroaluminum phthalocyanine (AlPc-Cl) and the thermally evaporated film was also investigated.
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Kim, Geonhwa, Youngseok Yu, Hojoon Lim, Beomgyun Jeong, Jouhahn Lee, Jaeyoon Baik, Bongjin Simon Mun, and Ki-jeong Kim. "AP-XPS beamline, a platform for operando science at Pohang Accelerator Laboratory." Journal of Synchrotron Radiation 27, no. 2 (January 28, 2020): 507–14. http://dx.doi.org/10.1107/s160057751901676x.

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Beamline 8A (BL 8A) is an undulator-based soft X-ray beamline at Pohang Accelerator Laboratory. This beamline is aimed at high-resolution ambient-pressure X-ray photoelectron spectroscopy (AP-XPS), soft X-ray absorption spectroscopy (soft-XAS) and scanning photoemission microscopy (SPEM) experiments. BL 8A has two branches, 8A1 SPEM and 8A2 AP-XPS, that share a plane undulator, the first mirror (M1) and the monochromator. The photon beam is switched between the two branches by changing the refocusing mirrors after the monochromator. The acceptance angle of M1 is kept glancing at 1.2°, and Pt is coated onto the mirrors to achieve high reflectance, which ensures a wide photon energy range (100–2000 eV) with high resolution at a photon flux of ∼1013 photons s−1. In this article, the main properties and performance of the beamline are reported, together with selected experiments performed on the new beamline and experimental system.
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Devan, Rupesh S., Shun-Yu Gao, Yu-Rong Lin, Shun-Rong Cheng, Chia-Er Hsu, Chia-Hao Chen, Hung-Wei Shiu, Yung Liou, and Yuan-Ron Ma. "Scanning Photoemission Spectromicroscopic Study of 4-nm Ultrathin SiO3.4 Protrusions Probe-Induced on the Native SiO2 Layer." Microscopy and Microanalysis 17, no. 6 (October 11, 2011): 944–49. http://dx.doi.org/10.1017/s1431927611011901.

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AbstractAtomic force microscopy probe-induced large-area ultrathin SiOx (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO2 layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiOx protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiOx protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si4+, Si3+, Si2+, and Si1+ species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiOx protrusions.
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Dissertations / Theses on the topic "X-ray Photoemission Spectroscopy (XPS)"

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Droschke, Sonja. "X-Ray Photoemission Spectroscopy Characterization of Fe(II)- and Fe(III)-Phthalocyanine Molecular Films." Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-257183.

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This thesis investigates the electronic structure of iron phthalocyanine (Fe(II)Pc) andiron phthalocyanine chloride (Fe(III)PcCl) immobilized on surfaces. For this purposetwo different deposition methods are used and compared: smearing the molecularpowder under atmosphere condition and evaporation of a molecular layer inultra-high vacuum. The electronic states of FePc and FePcCl are probed withphotoelectron spectroscopy (PES) and compared in relation to the ionic state of thecentral metal (Fe). The PE spectra show that evaporation of FePcCl at around 350°Cresults in dissociation of the chlorine from the FePc molecule, which is stable at thistemperature. Mass spectroscopic measurements during heating of FePcCl in ultra-highvacuum (UHV) show a clear Cl signal for temperature still below 250°C. Theoreticalcalculations of the binding energy for Cl in FePcCl seem to indicate dissociation of theCl from the molecules.
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Doran, Brian. "Preparation and characterization of Ribonucleic acid (RNA)/inorganic materials interfaces using photoemission spectroscopy." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000385.

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Zborowski, Charlotte. "Characterization of deeply buried interfaces by Hard X-ray Photoelectron Spectroscopy." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEC025/document.

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Cette thèse vise à améliorer la méthode d'analyse du fond continu inélastique afin de l'appliquer à des cas qui présentent un intérêt technologique. En effet, ces améliorations sont cruciales car elles portent sur des critères de précision et de gain de temps, plus particulièrement pour l’étude de dispositifs présentant plusieurs couches profondément enterrées de matériaux bien distincts. Ainsi, l'analyse du fond continu inélastique associée à la spectroscopie de photoélectrons à rayons X durs (HAXPES) présente un grand intérêt car l’HAXPES permet de sonder plus profondément dans un échantillon qu'avec la spectroscopie de photoélectrons à rayons X classique (XPS). Ce présent travail porte sur des échantillons technologiquement pertinents, principalement des transistors à haute mobilité d'électrons (HEMTs), à certaines étapes cruciales de leur processus de fabrication, tels que des recuits. Il est donc très important que ces analyses soient effectuées de manière non destructive afin de préserver les interfaces enterrées. Ce sont souvent l'emplacement de phénomènes complexes qui sont critiques pour les performances du dispositif et une meilleure compréhension est une condition préalable à l’amélioration des dispositifs. Dans ce travail, les phénomènes de diffusion en profondeur sont étudiés grâce à l’analyse du fond continu inélastique associée à l’HAXPES (en utilisant le logiciel QUASES) pour des profondeurs allant jusqu'à 60 nm. Les résultats de distribution en profondeur présentent des écarts par rapport aux mesures TEM inférieures à 5%. Le choix des paramètres d'entrée de la méthode est discuté pour une large gamme d'échantillons et des règles simples en sont issues qui rendent l'analyse réelle plus facile et plus rapide à effectuer. Enfin, il a été montré que la spectromicroscopie faite avec la technique HAXPEEM peut fournir des spectres à chaque pixel utilisables pour l’analyse du fond continu inélastique. Cela peut fournir une cartographie 3D de la distribution en profondeur des éléments de manière non-destructive
This thesis aims at improving the inelastic background analysis method in order to apply it to technologically relevant samples. Actually, these improvements are utterly needed as they concern criteria of accuracy and time saving particularly for analysis of devices presenting deeply buried layers with different materials. For this purpose, the interest of the inelastic background analysis method is at its best when combined with hard X-ray photoelectron spectroscopy (HAXPES) because HAXPES allows to probe deeper in the sample than with conventional X-ray photoelectron spectroscopy (XPS). The present work deals with technologically relevant samples, mainly the high-electron mobility transistor (HEMT), at some crucial steps of their fabrication process as annealing. Actually, it is very important that these analyses shall be performed non-destructively in order to preserve the buried interfaces. These are often the location of complex phenomena that are critical for device performances and a better understanding is often a prerequisite for any improvement. In this thesis, the in-depth diffusion phenomena are studied with the inelastic background analysis technique (using the QUASES software) combined with HAXPES for depth up to 60 nm. The depth distribution results are determined with deviations from TEM measurements smaller than a typical value of 5%. The choice of the input parameters of the method is discussed over a large range of samples and simple rules are derived which make the actual analysis easier and faster to perform. Finally, it was shown that spectromicroscopy obtained with the HAXPEEM technique can provide spectra at each pixel usable for inelastic background analysis. This is a proof of principle that it can provide a 3D mapping of the elemental depth distribution with a nondestructive method
Denne afhandling har til formål at forbedre den uelastiske baggrundsanalysemetode til anvendelser i den til teknologiske industri. Faktisk er disse forbedringer absolut nødvendige, for at opnå nøjagtighed og tidsbesparelse, især for analyse af prøver med dybt begravede lag af forskellige materialer. Til det formål er interessen for den uelastiske baggrundsanalysemetode bedst i kombination med hård røntgenfotoelektron-spektroskopi (HAXPES), fordi HAXPES gør det muligt at probe dybere i prøven end med konventionel røntgenfotoelektron-spektroskopi (XPS). Dette arbejde beskæftiger sig med teknologisk relevante prøver, hovedsagelig høj-elektron mobilitetstransistor (HEMT), på nogle afgørende trin i deres fremstillingsproces som fx annealing. Faktisk er det meget vigtigt, at disse analyser udføres på en ikke-destruktiv måde for at bevare de begravede grænseflader. Det er ofte her de komplekse fysiske fænomener opstår, som er kritiske for fuktionaliteten, og en bedre forståelse af grænsefladerne er ofte en forudsætning for at kunne forbedre denne. I denne afhandling studeres de dybdegående diffusionsfænomener med den uelastiske baggrundsanalyse teknik (ved hjælp af QUASES software) kombineret med HAXPES for dybder op til 60 nm. Dybdestributionsresultaterne har afvigelser fra TEM-målinger mindre end en typisk værdi på 5%. Valget af input parametre for metoden er diskuteret på bagground af et stort udvalg af prøver samt omfattende simuleringer og enkle regler er udledt, hvilket gør den praktiske analyse nemmere og hurtigere at udføre. Endelig blev det vist, at spektromikroskopi opnået med HAXPEEM-teknikken kan tilvejebringe spektre ved hver enkelt pixel som kan anvendes til uelastisk baggrundsanalyse. Dette viser at i princippet kan en 3D-billeddannelse af den elementære dybdefordeling bestemmes ikke destruktivt
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DRERA, GIOVANNI. "ELECTRONIC STRUCTURE OF TIO2 THIN FILMS AND LAALO3-SRTIO3 HETEROSTRUCTURES: THE ROLE OF TITANIUM 3D1 STATES IN MAGNETIC AND TRANSPORT PROPERTIES." Doctoral thesis, Università degli Studi di Milano, 2012. http://hdl.handle.net/2434/168728.

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The scope of this Thesis is the study of the electronic structure of two Ti-based oxide systems, TiO2 thin films and the ultra-thin LaAlO3-SrTiO3 (LAO-STO) heterojunctions, which display remarkable physical phenomena, so far not completely understood. In both cases, the titanium-related electronic states are expected to play a fundamental role and thus have been probed by means of X-ray photoemission spectroscopies. A weak room-temperature ferromagnetism (FM) has been recently detected in slightly reduced TiO2 thin film and in other oxides, such as HfO2 and CaO; since these materials are insulating closed-shell systems, this phenomenon has been classified as "d0 magnetism". Magnetism in these compounds seems to be related to the growth methodology and ultimately to the presence of structural defects, such as oxygen vacancies. Therefore, a thorough analysis of titanium electronic states, and especially of the defect-related Ti3+ energy levels, is needed in order to understand the origin of magnetic interactions. In the first part of this Thesis, a comprehensive magnetic characterization of a set of TiO2 samples is given, together with the analysis of Ti 3d-related states carried out with X-ray photoemission (XPS) and resonant photoemission (ResPES). A set of N-doped TiO2 thin films have also been grown, in order to verify the effect of doping on the TiO2 magnetism. The hypothesis of a clustered oxygen-vacancies origin of FM is then discussed in the light of the experimental and theoretical results. Another interesting oxide system in which the stoichiometry of Ti ions play a fundamental role is the LAO-STO interface. LAO and STO, separately, are two band insulators, with an empty shell electronic structure (3d0 for STO, 4f0 for LAO) and a similar perovskite structure; however, the interface created by growing LAO on the top of STO (001) has found to become metallic, hosting a 2D electron gas. This heterostructure becomes conductive only when the STO is terminated with a TiO2 layer; therefore, the Ti-related electronic states are expected to host the metallic states. The second part of this Thesis is devoted to the study of conductive and insulating LAO-STO interfaces, carried out by XPS, X-ray absorption (XAS) and with ResPES techniques. The stoichiometry of each atomic species has been evaluated through a comparison with LAO and STO single crystals. A resonance enhancement of the conductive Ti states, associated to a small fraction of Ti3+ ions is reported and compared to theoretical calculations. On the basis of these results, the origin of metallic states in ultra-thin LAO-STO interfaces is properly addressed. In addition, a characterization of the intermixing and the disorder at the LAO-STO interface has been done through angle-resolved XPS, providing important information on the intermixing of light cations (Al, Ti) otherwise missed by X-ray diffraction techniques.
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Caro, Anne-Sophie. "Fonctionnalisation de surfaces d'acier inoxydable afin d'inhiber les premières étapes de formation d'un biofilm." Paris 6, 2008. http://www.theses.fr/2008PA066560.

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Foster, Geoffrey M. "DEFECT AND METAL OXIDE CONTROL OF SCHOTTKY BARRIERS AND CHARGE TRANSPORT AT ZINC OXIDE INTERFACES." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1524050368601169.

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Venturini, Federica. "Soft X-ray photoemission spectroscopy." Université Joseph Fourier (Grenoble), 2005. http://www.theses.fr/2005GRE10175.

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La motivation principale de cette thèse a été de déterminer les avantages et les inconvénients de l'utilisation de la spectroscopie de photoémission résolue en angle dans le domaine des rayons X mous. L'étude d'un système bien connu, Ag(001) nous permet de discuter plusieurs questions telles que le rôle de la quantité de mouvement du photon, la pertinence de l'approximation d'électron libre à l'état final, et le rôle des phonons. La polarisation de la lumière incidente a aussi été exploitée. En choisissant un tel système, nous avons aussi voulu comparer les résultats expérimentaux avec des spectres calculés de photoémission résolue en angle dans cette gamme d'énergie. Le comportement à basse température atypique des composés de Cérium est généralement imputé à l'effet Kondo. Des résultats originaux ont été obtenus en étudiant la bande de valence de trois composés monocristallins iso-structuraux de Cérium, CeCu2Ge2, CeNi2Ge2 et CeC02Ge2. La position du seuil d'absorption M5 du Cérium dans la bande d'énergie des rayons X mous est exploitée pour isoler la contribution 4f à ces spectres. De plus, l'utilisation de photons incidents d'énergie relativement élevée permet de minimiser les effets de surface. Les spectres de photoémission présentés dam cette thèse incluent des études de dépendance en température, des spectres à la résonance, des spectres résolus en angle ou bien intégrés angulairement. Les premiers sont en accord avec le modèle d'impureté unique d'Anderson, alors que les derniers suggèrent qu'il est important de prendre en compte le réseau cristallin
The main motivation behind this thesis has been to determine both the advantages and the disadvantages ofthe soft X-ray application of angle-resolved photoemission spectroscopy. The investigation of a weil known system, Ag(001), enables us to discuss several questions such as the role of the photon momentum, the applicability ofthe fiee-electron-like final state approximation and the role ofphonons. The polarisation of the incoming light has also been exploited. The choice of such a system also cornes from our des ire to compare the results with calculations of angle-resolved photoemission spectra in this energy range. The anomalous low temperature properties of Ce-based compounds are generally related to the Kondo effect. Original results have been obtained by investigating the valence band of three iso-structural single crystalline Ce compounds, CeCu2Ge2, CeNi2Ge2 and CeC02Ge2. The location of the Ce M5 absorption edge within the soft X-ray energy range is exploited in order to isolate the 4f contribution to the spectra. Added to this, the use of relatively high incoming photon energies allows minimising the surface contribution. Temperature dependent, resonant, angle-resolved and angle-integrated photoemission measurements have been performed. The former are in qualitative agreement with the single impurity Anderson model, whereas the latter suggest the importance of taking the lattice into account
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Kazzi, Mario Hollinger Guy. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully : Ecole Centrale de Lyon, 2007. http://bibli.ec-lyon.fr/exl-doc/melkazzi.pdf.

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Kazzi, Mario El. "Etude par photoemission (XPS & XPD) d'hétérostructures d'oxydes fonctionnels epitaxies sur silicium." Ecully, Ecole centrale de Lyon, 2007. http://www.theses.fr/2007ECDL0028.

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Cette thèse se situe dans un des axes principaux de l’INL qui a pour objectif de développer des procédés de fabrication de films minces d’oxydes monocristallins, épitaxiés sur silicium. Ces oxydes pourraient remplacer les oxydes de grille amorphes de type SiOxNy ou HfSixOyNz et répondre au cahier des charges de la « Road Map » de l’ITRS dans les futures filières CMOS sub 22nm. L’intérêt de maîtriser l’épitaxie d’oxydes sur silicium va bien au-delà de l’application au CMOS. Un tel savoir faire serait une brique technologique essentielle pour pouvoir développer des filières d’intégration monolithique sur silicium. Dans ce contexte, l’objectif principal de ma thèse a été de mener une étude approfondie des propriétés physicochimiques et structurales de couches fines d’oxydes élaborées par Epitaxie par Jets Moléculaires (EJM) sur substrat silicium ou oxyde, en utilisant la spectroscopie de hotoélectrons (XPS) et la diffraction de photoélectrons (XPD). Nous avons étudié dans un premier temps la relaxation de films minces de LaAlO3 et de BaTiO3 épitaxiés sur des substrats de SrTiO3(001). Nous avons montré qu'au-dessous d’une certaine épaisseur critique ces deux oxydes sont contraints de façon pseudomorphiques sur SrTiO3(001). De plus nous avons clairement mis en évidence une forte augmentation de la déformation ferroélectrique pour une couche contrainte de BaTiO3. Dans un deuxième temps, nous avons aussi étudié la croissance de LaAlO3 sur Si(001). LaAlO3 est amorphe pour des températures de croissance en dessous de 500°C. Pour des températures supérieures il y a formation de silicates à l'interface qui empêche la cristallisation. Pour surmonter cette difficulté, des procédés d’ingénierie d’interface ont été développés pour limiter les réactions interfaciales et réussir la croissance épitaxiale. Ils sont basés sur l’utilisation de couches tampons interfaciales d’oxydes comme SrO, SrTiO3 et Al2O3. Enfin, nous avons comparé les modes de croissance et la stabilité d’interface d’Al2O3 et de Gd2O3 épitaxiés sur Si(111) et Si(001). Les résultats prouvent que la croissance de ces deux oxydes sur Si(111) a une orientation suivant [111]. Par contre sur Si(001) le mécanisme de croissance est plus complexe avec des relations d’épitaxie et des orientations inhabituelles
This thesis is on one of the main INL axes, the goal of which is to develop the growth procedures of thin oxide single crystal on silicon. These oxides are meant to replace the presently used amorphous gate oxide (SiOxNy and HfSixOyNz) by a high-κ oxide in future “sub 22nm” CMOS. Besides, the interest in controlling the growth of these oxides goes far beyond this oxide gate application. This know-how would be a technological breakthrough to develop monolithic integration on silicon. In this context, the main objective of my thesis has been to study the physico-chemical and structural properties of thin oxide layers grown by Molecular Beam Epitaxy (MBE) on silicon or oxide substrate. We have used X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). First, the stress relaxation of LaAlO3 and BaTiO3 grown on SrTiO3 (001) substrate has been investigated. We have proved that below a critical thickness this two oxides can be grown pseudomorphically and that beyond a plastic relaxation occurs. In addition, we have evidenced that the ferroelectric deformation is strongly enhanced in strained BaTiO3 thin films. Second, we have studied the LaAlO3 growth on Si(001). LaAlO3 is amorphous for growth temperature below 500°C. For higher temperature, the formation of silicates at the interface prevents the crystallization. Thus, an interface engineering strategy has been set up to avoid these interfacial reactions and to succeed an epitaxial growth,. Using SrO, SrTiO3 and Al2O3 as buffer Finally, a comparison of the growth mode and interface stability has been done between Al2O3 and Gd2O3 grown either on Si(111) or Si(001) substrates. Results show that this two oxides grow along the [111] direction on Si(111). However, on Si(001), the growth mechanism is more complex leading to unusual orientations and epitaxial relationships
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Doutt, Daniel R. "THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366199639.

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Books on the topic "X-ray Photoemission Spectroscopy (XPS)"

1

National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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National Institute of Standards and Technology (U.S.), ed. The NIST X-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1991.

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Crist, B. Vincent. Handbook of monochromatic XPS spectra. Chichester: John Wiley, 2000.

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Cultural heritage materials: An XPS approach. New York: Nova Science Publishers, 2012.

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1948-, Briggs D., ed. High resolution XPS of organic polymers: The Scienta ESCA300 database. Chichester [England]: Wiley, 1992.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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Grasserbauer, M. Angewandte Oberflächenanalyse: Mit SIMS Sekundär-Ionen-Massenspektrometrie, AES Auger-Elektronen-Spektrometrie, XPS Röntgen-Photoelektronen-Spektrometrie. Berlin: Springer-Verlag, 1986.

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Book chapters on the topic "X-ray Photoemission Spectroscopy (XPS)"

1

Nelson, A. J. "X-ray Photoemission Spectroscopy." In Microanalysis of Solids, 247–67. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4899-1492-7_9.

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Münder, H. "X-ray photoemission spectroscopy." In Porous Silicon Science and Technology, 277–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_16.

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Bubert, Henning, John C. Rivière, and Wolfgang S. M. Werner. "X-Ray Photoelectron Spectroscopy (XPS)." In Surface and Thin Film Analysis, 7–41. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch2.

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Qu, Jun, and Harry M. Meyer. "X-Ray Photoelectron Spectroscopy (XPS)." In Encyclopedia of Tribology, 4133–38. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_1222.

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Andrade, Joseph D. "X-ray Photoelectron Spectroscopy (XPS)." In Surface and Interfacial Aspects of Biomedical Polymers, 105–95. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_5.

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Sateesh Kumar, Ch, M. Muralidhar Singh, and Ram Krishna. "X-Ray Photo Spectroscopy (XPS)." In Advanced Materials Characterization, 37–47. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003340546-5.

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Schmal, Martin, and Carlos André C. Perez. "X-Ray Photoelectron Spectroscopy (ESCA: XPS/ISS)." In Heterogeneous Catalysis and its Industrial Applications, 251–66. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-09250-8_11.

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Storjohann, I., C. Kunz, A. Moewes, J. Voss, and M. Wulf. "Microprobe Photoemission Spectroscopy with the Hamburg Focusing Mirror Scanning Microscope." In X-Ray Microscopy III, 238–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-540-46887-5_55.

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Haasch, Richard T. "X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES)." In Practical Materials Characterization, 93–132. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-9281-8_3.

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Troć, R. "US: X-ray Photoelectron Spectroscopy (XPS) and Photoelectron Spectroscopy (PES)." In Actinide Monochalcogenides, 392–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-47043-4_57.

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Conference papers on the topic "X-ray Photoemission Spectroscopy (XPS)"

1

Nicolaï, Laurent, and Ján Minár. "XPS limit in soft X-ray photoemission spectroscopy of Ag(001)." In 1ST INTERNATIONAL CONFERENCE ON RADIATIONS AND APPLICATIONS (ICRA-2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5048885.

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Liu, Xiao Di, and Dacheng Zhang. "Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21333.

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Abstract:
Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.
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Sugimoto, Takuya, Takashi Mizokawa, Hiroki Wadati, Kou Takubo, Andrea Damascelli, Tom Z. Regier, George A. Sawatzky, et al. "X-ray Photoemission and X-ray Absorption Spectroscopy of Hexagonal Ba3CuSb2O9." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.012122.

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Chaney, Robert, Robert Cormia, and Ruth Siordia. "X-Ray Photoelectron Spectroscopy (XPS) Applications Using Microfocused X-Rays." In 30th Annual Technical Symposium, edited by Thomas W. Rusch. SPIE, 1986. http://dx.doi.org/10.1117/12.936604.

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Hamamoto, Satoru, Yuina Kanai-Nakata, Hidenori Fujiwara, Kentaro Kuga, Takayuki Kiss, Atsushi Higashiya, Atsushi Yamasaki, et al. "Linearly Polarized Hard X-Ray Photoemission Spectroscopy of PrBe13." In Proceedings of J-Physics 2019: International Conference on Multipole Physics and Related Phenomena. Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.29.012010.

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Sato, Hitoshi, Komei Tobimatsu, Arata Tanaka, Hiroyuki Nakamura, Yuki Utsumi, Kojiro Mimura, Satoru Motonami, et al. "Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS3." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.012116.

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Kobayashi, K., E. Ikenaga, J. J. Kim, M. Kobata, and S. Ueda. "Nanotechnology and Industrial Applications of Hard X-ray Photoemission Spectroscopy." In SYNCHROTRON RADIATION INSTRUMENTATION: Ninth International Conference on Synchrotron Radiation Instrumentation. AIP, 2007. http://dx.doi.org/10.1063/1.2436358.

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Hall, Charlotte, Pilar Ferrer, David C. Grinter, Ricardo Grau-Crespo, Georg Held, Maria Retuerto, and Juan Rubio-Zuazo. "An experimental and theoretical study of spinel ferrites, MFe2O4 (M = Co, Zn), by X-ray photoelectron spectroscopy." In Photoemission Spectroscopy for Materials Analysis II, edited by Rosa Arrigo, Robert Palgrave, and Philip D. King. SPIE, 2023. http://dx.doi.org/10.1117/12.2647610.

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Saito, Y., J. Iihara, T. Yonemura, K. Yamaguchi, and D. Tsurumi. "Characterization of GaAs Surface State by Hard X-ray Photoemission Spectroscopy." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-6-4.

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Ramelan, Ari Handono, Pepen Arifin, and Ewa Goldys. "GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)." In 2010 International Conference on Nanoscience and Nanotechnology (ICONN). IEEE, 2010. http://dx.doi.org/10.1109/iconn.2010.6045185.

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Reports on the topic "X-ray Photoemission Spectroscopy (XPS)"

1

Wagner, C. D. NIST x-ray photoelectron spectroscopy (XPS) database. Gaithersburg, MD: National Bureau of Standards, 1990. http://dx.doi.org/10.6028/nist.tn.1289.

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Kim, Young K., David K. Shuh, R. S. Williams, Larry P. Sadwick, and Kang L. Wang. Electronic Study of Pt-Ga Intermetallic Compounds Using X-Ray Photoemission Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada225036.

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Anders, S., T. Stammler, C. S. Bhatia, J. Stoehr, W. Fong, C. Y. Chen, and D. B. Bogy. Study of hard disk and slider surfaces using X-ray photoemission electron microscopy and near-edge X-ray absorption fine structure spectroscopy. Office of Scientific and Technical Information (OSTI), April 1998. http://dx.doi.org/10.2172/674744.

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Hsu, Lishing, Barakat Alavi, David K. Shuh, and R. S. Williams. Electronic-Structure Study of the Na-Ga and Ni-In Intermetallic Compounds Using X-Ray Photoemission Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, July 1989. http://dx.doi.org/10.21236/ada209696.

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