Dissertations / Theses on the topic 'Write data'
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Walter, Sarah. "Parallel read/write system for optical data storage." Diss., Connect to online resource, 2005. http://wwwlib.umi.com/cr/colorado/fullcit?p1425767.
Full textIbanez, Luis Daniel. "Towards a read/write web of linked data." Nantes, 2015. http://archive.bu.univ-nantes.fr/pollux/show.action?id=9089939a-874b-44e1-a049-86a4c5c5d0e6.
Full textThe Linked Data initiative has made available millions of pieces of data for querying through a federation of autonomous participants. However, the Web of Linked data suffers of problems of data heterogeneity and quality. We cast the problem of integrating heterogeneous data sources as a Local-as-View mediation (LAV) problem, unfortunately, LAV may require the execution of a number of “rewritings” exponential on the number of query subgoals. We propose the Graph-Union (GUN) strategy to maximise the results obtained from a subset of rewritings. Compared to traditional rewriting execution strategies, GUN improves execution time and number of results obtained in exchange of higher memory consumption. Once data can be queried data consumers can detect quality issues, but to resolve them they need to write on the data of the sources, i. E. , to evolve Linked Data from Read/Only to Read-Write. However, writing among autonomous participants raises consistency issues. We model the Read-Write Linked Data as a social network where actors copy the data they are interested into, update it and publish updates to exchange with others. We propose two algorithms for update exchange: SU-Set, that achieves Strong Eventual Consistency (SEC) and Col-Graph, that achieves Fragment Consistency, stronger than SEC. We analyze the worst and best case complexities of both algorithms and estimate experimentally the average complexity of Col-Graph, results suggest that is feasible for social network topologies
Horne, Ross J. "Programming languages and principles for read-write linked data." Thesis, University of Southampton, 2011. https://eprints.soton.ac.uk/210899/.
Full textWang, Frank Zhigang. "Advanced magnetic thin-film heads under read-while-write operation." Thesis, University of Plymouth, 1999. http://hdl.handle.net/10026.1/2353.
Full textBai, Daniel Zhigang. "Micromagnetic Modeling of Write Heads for High-Density and High-Data-Rate Perpendicular Recording." Research Showcase @ CMU, 2004. http://repository.cmu.edu/dissertations/922.
Full textSöderbäck, Karl. "Organizing HLA data for improved navigation and searchability." Thesis, Linköpings universitet, Databas och informationsteknik, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176029.
Full textKalezhi, Josephat. "Modelling data storage in nano-island magnetic materials." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/modelling-data-storage-in-nanoisland-magnetic-materials(9b449925-1a39-4711-8d55-82e6d8ac215c).html.
Full textAmur, Hrishikesh. "Storage and aggregation for fast analytics systems." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50397.
Full textVysocký, Ondřej. "Optimalizace distribuovaného I/O subsystému projektu k-Wave." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2016. http://www.nusl.cz/ntk/nusl-255408.
Full textHernane, Soumeya-Leila. "Modèles et algorithmes de partage de données cohérents pour le calcul parallèle distribué à haut débit." Thesis, Université de Lorraine, 2013. http://www.theses.fr/2013LORR0042/document.
Full textData Handover is a library of functions adapted to large-scale distributed systems. It provides routines that allow acquiring resources in reading or writing in the ways that are coherent and transparent for users. We modelled the life cycle of Dho by a finite state automaton and through experiments; we have found that our approach produced an overlap between the calculation of the application and the control of the data. These experiments were conducted both in simulated mode and in real environment (Grid'5000). We exploited the GRAS library of the SimGrid toolkit. Several clients try to access the resource concurrently according the client-server paradigm. By the theory of queues, the stability of the model was demonstrated in a centralized environment. We improved, the distributed algorithm for mutual exclusion (of Naimi and Trehel), by introducing following features: (1) Allowing the mobility of processes (ADEMLE), (2) introducing shared locks (AEMLEP) and finally (3) merging both properties cited above into an algorithm summarising (ADEMLEP). We proved the properties, safety and liveliness, theoretically for all extended algorithms. The proposed peer-to-peer system combines our extended algorithms and original Data Handover model. Lock and resource managers operate and interact each other in an architecture based on three levels. Following the experimental study of the underlying system on Grid'5000, and the results obtained, we have proved the performance and stability of the model Dho over a multitude of parameters
He, Zhenyu. "Writer identification using wavelet, contourlet and statistical models." HKBU Institutional Repository, 2006. http://repository.hkbu.edu.hk/etd_ra/767.
Full textSmith, Cynthia Miller. "A Direct-Write Three-Dimensional Bioassembly Tool for Regenerative Medicine." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1335%5F1%5Fm.pdf&type=application/pdf.
Full textKurniawan, Budi. "Offline writer identification system using multiple neural networks." Phd thesis, Department of Electrical Engineering, 1998. http://hdl.handle.net/2123/9392.
Full textShao, Cheng. "Multi-writer consistency conditions for shared memory objects." Texas A&M University, 2007. http://hdl.handle.net/1969.1/85806.
Full textLee, Yi-An, and 李翼安. "Data Compression Ratio-aware Routing for Multiple E-Beam Direct Write Systems." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x59xpu.
Full text國立臺灣大學
電子工程學研究所
105
Along with the advancement of technology, the feature size of Integrated Circuits(IC) are shrinking down day after day, but the resolution of the ArF laser is not enough to support next generation lithography. Electron beam lithography have a role to play in next generation lithography with its characteristic of high-accuracy. In order to support the accuracy of Electron beam, the massive data size of the circuit has to be delivered to the E-beam emitter. However, circuits nowadays have become more complicated. In order to synchronize the operation of Electron beam lithography with data transmission, the successfulness of this process relies on the speed of data transmission, which is not sufficiently fast even with technologies today. So in practice, the massive circuit data should be compressed before transmitted by optic fibers, and then decompressed on the chip of E-beam machines. In this thesis, considering the data arrangement after rasterization, we proposed a method to improve router. Besides, we modify data compression algorithm to support the particular arrangement of data. The results of experiments show that we not only improve data compression ratio with our proposed algorithms but establish a procedure of data transformation for multiple electron beam direct write systems.
Chiu, Yu-Hsiang, and 邱煜翔. "Data Compression Ratio-aware Detailed Routing for Multiple E-Beam Direct Write Systems." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/49819815702155267265.
Full text國立臺灣大學
電子工程學研究所
104
The feature size of Integrated Circuits(IC) are shrinking down along with the advancement of technology, but the resolution of the ArF laser is far from the target for next generation lithography. Electron beam (E-beam) lithography, with its high-accuracy characteristic, is very likely to become the main role in next generation lithography. Because of the accuracy of E-beam, the exact information of the circuit has to be delivered to the E-beam emitter. However, circuits nowadays has become so complicated that the successfulness of this process relies on the speed of data transmission, which is not sufficiently fast even with technologies today. So in practice, data should be compressed first, transmitted by optic fibers, and then decompressed in the E-beam machines. In this thesis, we proposed a detailed routing method to improve data compression quality before applying the actual compression algorithm. The results of experiments show that, with one particular data compression algorithm, LineDiff Entropy, chosen, we improve data compression ratio with our proposed detailed router. And we can conclude that considering data compression ratio in physical design phase is a field worth studying.
Wang, Yueh-yi, and 王岳宜. "Architecture Design and RTL Implementation of SA-110 Compatible IMMU and Data Write Buffer." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/03762313072137020886.
Full text國立交通大學
資訊工程系
87
SA-110 is a 32-bit general-purpose RISC microprocessor with a 16KB instruction cache (Icache), a 16KB write-back data cache (Dcache), two memory management units (IMMU and MMU), separate 32-entry translation look-aside buffers (ITLB and DTLB), and an 8-entry write buffer combined on a single chip. ITLB and DTLB can map segments, small pages, and large pages respectively. This thesis presents architecture design and RTL implementation of IMMU and Data Write Buffer in SA-110 microprocessor. In this design, the IMMU supports a conventional two-level page table structure and has a dedicated 32-entry ITLB to cache its page table, accelerating the time required. As for the Write Buffer, we design its control logic and the interfaces between Bus Interface Unit and between Dcache. The functions of content's flushing and merging for the Write Buffer are also fulfilled. At last, we implement our design and simulate it to verify each module's functions correctly using Verilog-XL.
Lu, Yi-Ying, and 呂易穎. "K-Grouping: A Machine-Learning-based Data Classifier to Reduce the Write Amplification in SSDs." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/88vr3x.
Full text國立臺灣科技大學
電子工程系
107
Solid-state drives (SSDs) composed of flash memory have the advantages of non-volatility, fast speed, shock resistance, low-power consumption, and small size. In recent years, the SSDs have been using as data storage for various devices widely. Two critical characteristics of flash memory are that it does not support the in-place update for the data, and it must write data in units of a page and erase data in units of a block. Due to the two characteristics, when a block is selected as a victim block to erase, we need to move the remaining valid pages from the victim block to another free block. Therefore, how to reduce the amount of valid page movement is a crucial issue for SSDs. By performing data classification, it can sufficiently concentrate the distribution of invalid pages in the flash memory and reduce the data movement cost. This thesis proposes a method to design an adaptive data classifier for different workloads based on the machine learning algorithm. The classifier writes the requests with the same characteristics in the same group of data blocks. Through such a design, it can improve the performance of SSDs by reducing the live page copying and further decreasing the write amplification.
林勇維. "Analysis and Design of Data-Aware Dynamic Supply Write-Assist Scheme for Cross-Point 8T SRAM." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/52172197104937269628.
Full text國立交通大學
電子研究所
99
With fastest access speed among semiconductor memories, embedded Static Random Access Memory (SRAM) plays an important role in various System-on-Chip (SoC) designs. Due to its large ratio, low voltage operation capability of SRAM can lower the total system power significantly. But technology scaling, variation severely degrades functionality of digital circuit. In this thesis, a Data-Aware dynamic supply Write-Assist scheme is proposed and implemented with 128Kb cross-point 8T SRAM. This technique improves Write margin over 20% on average at operating voltage ranges from 0.5V to 0.8V, and features good anti-variation ability with minimum area overhead. Meanwhile, Write performance improves to pico-second scale, otherwise would fail if no Write assist technique is applied, on average at operating voltage ranges from 0.5V to 0.8V. Simulation results show that chip operation speed achieves 474MHz at VDD = 0.6V.
Tang, Chin-Khai, and 陳晉凱. "Layout Data Compression Algorithm and Its Hardware Decoder Design for Multiple Electron-Beam Direct-Write Systems." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/92474890780302941846.
Full text國立臺灣大學
電子工程學研究所
104
The advances in optical projection lithography have ensured the steady continuation of Moore''s law. However, the wavelength of light sources has reached the lowest limit of 193-nm, and optical diffraction has become a major problem. Thus, other cost effective solutions are urgently needed. Electron-beam maskless lithography is a powerful technology capable of very-high resolution writing. However, electron-beam maskless lithography suffers from slow electron-beam scanning process and low throughput. In recent years, new research on multiple electron-beam direct-write systems that use massively parallel electron-beam emitters to achieve fast scanning process and high WPH has gained popularity. In multiple electron-beam direct-write systems, one of the technical challenges is to transfer very large amounts of electron-beam layout data that controls electron-beam emitters from the data centers to multiple electron-beam direct-write systems. Furthermore, due to the enormous data transfer rates, a large number of hardware decoders are required in multiple electron-beam direct-write systems. Each hardware decoder must be able to decompress EBL data at high data rates, and the hardware resource requirements should be low so that the cost of implementing and operating the multiple electron-beam direct-write systems can be minimized. In this dissertation, a lossless electron-beam layout data compression algorithm, LineDiff Entropy, and its low-complexity high-performance hardware decoder for multiple electron-beam direct-write lithography systems are proposed. The algorithm compares consecutive data scanlines and encodes the data based on the change/no-change of pixel values and the lengths of pixel sequences. Then, the compaction steps of data omission, merging, and encoding of consecutive long identical scanlines are applied. Then, custom prefix codes are assigned to data with high occurrence frequency. The hardware decoder is designed as three circuit blocks that perform entropy decoding, de-compaction, and electron-beam layout data generation through parallel outputs. The hardware decoder only requires minimum resource.The results demonstrate that our algorithm can achieve excellent compression performance and that the hardware decoder can decompress data at very high data rates.
Chang, chi-Shin, and 張琦昕. "40nm 1.0Mb 6T Pipeline SRAM with Step-Up Word- Line and Adaptive-Data-Aware Write-Assist Design." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/38003850682518485852.
Full text國立交通大學
電子研究所
100
More and more memory is used in today’s electronic products, and consequently the design of memory is becoming crucial. SRAM is usually used in high-performance microprocessor cache and embedded system applications because it has highest operating speed than other memory family. Conventional 6T SRAM use “thincell” layout to achieve high density, so it becomes the mainstream of SRAM design. However, with recently CMOS technology scaling, the greatest barrier to achieving high yield is process variation. The process variation is especially serious for high density SRAM because of the small device size and large capacity. This will seriously degrade the SRAM cell operating margin in advanced technology node. In the low-voltage operation, the conventional 6T SRAM is almost impossible to survive. For the 6T SRAM in the advanced process, in order to promote the survival probability, we proposed Read/Write assist circuit techniques. The proposed Step-Up Word-Line technique improves Read Static Noise Margin with acceptably loss of read speed and Write margin. The Write ability and Write performance are enhanced by a column based Adaptive-Data-Aware Write-Assist scheme. We also use Pipeline scheme to increase the operating speed. In this work, we implement a 1.0Mb high-performance 6T SRAM with 2 stages Pipeline with a single supply voltage in the 40nm Low-Standby-Power bulk complementary metal-oxide semiconductor technology. The chip can operate across wide voltage range from 1.2V to 0.7V, with operating frequency of 800MHz@1.2V and 25oC.
Jing-CianLin and 林璟謙. "Design of a Temperature-Aware Highly Reliable Resistive Random Access Memory Controller on Data Retention and Write Error Issues." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/tmhvy6.
Full text國立成功大學
電機工程學系
102
Resistive random access memory (ReRAM) is a one of emerging non-volatility memories. Main advantages of ReRAM are low power, high speed, simple structure, and compatible with CMOS process. However, the ReRAM has reliability issues due to resistance instability at high temperature and failure during transition. The resistances of ReRAM cells drift toward intermediate state at high temperature. During write operation, some write failure errors occur because some ReRAM cells cannot change their resistances successfully. This thesis proposed a temperature-aware memory controller to deal with data retention errors and write failure errors. The proposed temperature-aware memory controller uses a temperature-aware operation scheme and an adaptive write scheme to improve the reliability of ReRAM. The temperature-aware operation scheme adjusts the ReRAM operation setting according to temperature for reducing resistance instability at the high temperature. On the other hand, the adaptive write scheme considers write-failure and data retention issues simultaneously to improve ReRAM reliability. As a result, the adaptive write scheme improves the bit-error rate (BER) of ReRAM by 96.6%. Additionally, temperature-aware operation scheme reduces the BER of ReRAM by 72.2% at 125°C. The proposed temperature-aware controller reduces the BER of ReRAM by 88.2% at 125°C.
Sun, Yu-Yang, and 孫煜洋. "The study and implementation of a hybrid DOE read/write module used in the color-inkjet high density data storage." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/m925wz.
Full text國立虎尾科技大學
機械與機電工程研究所
96
A high density optical disk storage concept using microholographic multiplexing method has become attractive to the data storage industry. A hybrid diffractive-refractive objective lens is designed and implemented in this study. It creates an extended depth of focus beam with diffraction-limited beam spot size remaining nearly unchanged throughout the recording media volume. In addition, the benefits of using hybrid optical element include (1) high numerical aperture, (2) low cost, (3) stable in volume production (3) strong optical enhancement. In this study, we first outlined the design procedure and used a commercial available computer code to eliminate the chromatic aberration in the lens design. The Taguchi method was implemented in this work to find the optimum design parameters. The hybrid lens is fabricated by the ultra-precision machine and optical performances are verified by a series of experimental works. The control program, used in the optical-storage station, was written in Visual Basic. Users can operate the motor in various speeds via this user-friendly interface.
Chen, Chien-Fu, and 陳建甫. "An 8T SRAM with Dual Data-Aware Write-Assists and Negative Read Wordline for High Cell-Stability, Speed and Area-Efficiency." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/00754860611419607580.
Full text國立清華大學
電機工程學系
101
In our livelihood, Static Random Access Memory (SRAM) appears in the almost electronics and it is required much more area than other circuits in the SoC chip. It shows the SRAM used the most power of a chip. So, how to solve the power consumption issue of SRAM and not to reduce the operating performance of SRAM is a big challenge. To make the power consumption reduce for SRAM, lower operating voltage is an useful method. But SRAM operated at low VDD suffers the following: (1) read disturb and half-select disturb (2) write ability and half-select tolerance trade off, and (3) reduced sensing margin (SM) as well as read failure and slow speeds. Previous works achieved read-disturb-free operations; but do not solve the trade-off between the half-select tolerance and write ability without time-consuming and power-consuming write-back (WB) scheme. All of this issue makes previous work can’t operate at ultra low voltage with higher speed. In this work, we proposes an 8T cell with dual data-aware write-assist (D2AW) and negative read word-line (NRWL) schemes. The column-based D2AW provides, for the first time, the solution to the trade-off between the row/column half-select (HS)-static noise margins (SNM) and the write margin (WM) thanks to the dual data-aware controls of: (1) cell-VSS (DA-CVSS) and (2) write word-line (DA-WWL). NRWL expands the RBL voltage swing and improve the read speed. A fabricated 65nm CMOS logic process 128-row 16Kb D2AW8T SRAM achieved 7.3MHz/48MHz at VDD=210mV/300mV by oscilloscope and Personal Kalos 2 testing. The figure of merit (FOM): [cell stability (CS)*cycle frequency (f)]/[cell area (A)*minimum VDD (VDDmin)] is 14+x higher than that of other low-VDDmin SRAM cells.