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Author: Grafiati

Published: 7 July 2024

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1

Rome, Grace, Fry Intia, Talysa Klein, Zebulon Schicht, Adele Tamboli, Emily L. Warren, and Ann L. Greenaway. "Utilizing a Transparent Conductive Encapsulant to Protect Photoelectrodes during Solar Fuel Formation." ECS Meeting Abstracts MA2023-01, no. 55 (August 28, 2023): 2705. http://dx.doi.org/10.1149/ma2023-01552705mtgabs.

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Carbon-neutral electricity is rapidly becoming available worldwide as solar and wind technologies advance, but storing energy in chemical bonds will remain a critical need for the transportation sector, as planes and other energy intensive processes will still require liquid fuels. Solar fuels, utilizing sunlight to directly convert CO2 into useful chemicals, are a renewable and net carbon-neutral way to produce needed liquid fuels. However, a common problem with photoelectrochemical solar fuel production is semiconductor degradation from submersion in aqueous environments. An ideal protective layer should 1) prevent solution from reaching the semiconductor, 2) maintain charge transfer to and from the solution, and 3) be transparent to light above the semiconductor band gap. While there presently are protective layer options that meet all three requirements, such as leaky TiO2 and MoS2, they are not easily adaptable to new semiconductor surfaces and/or to new electrochemical reactions. This can make protection difficult for newly developed photoabsorbers and catalytic reaction pairings. In this work, we demonstrate the use of transparent conductive encapsulants (TCEs) to meet these three requirements while also allowing for photoelectrode- and catalysis-agnostic adaptability. TCEs are composed of an ethyl vinyl acetate (EVA) matrix with embedded conductive metal-coated poly(methyl methacrylate) (PMMA) microspheres that can be attached to substrates through a lamination process. First, we characterize the electrochemical behavior of TCE-coated electrodes using the reduction of methyl viologen, demonstrating electrical conduction through the TCE layer. Results from a pinhole detection apparatus suggest the TCE is initially defect free and thus able to prevent solution from reaching the substrate. Then, we perform photoelectrochemical measurements of TCE-covered semiconductors to demonstrate the flexibility of this protection scheme for multiple materials. We also show the results of long-term photoelectrochemical measurements designed to probe the efficacy of TCEs as protective layers. These findings demonstrate that TCEs are an effective protective layer for a variety of photoelectrochemical applications.

2

Woods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson, and Andriy Zakutayev. "Wide Band Gap Chalcogenide Semiconductors." Chemical Reviews 120, no. 9 (April 6, 2020): 4007–55. http://dx.doi.org/10.1021/acs.chemrev.9b00600.

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3

Medvid, Arthur, Igor Dmitruk, Pavels Onufrijevs, and Iryna Pundyk. "Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation." Solid State Phenomena 131-133 (October 2007): 559–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.559.

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The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation. Nanohills which are self-organized on the surface of Si, are characterized by strong photoluminescence in the visible range of spectra with long wing in the red part of spectra. This peculiarity is explained by Quantum confinement effect in nanohillsnanowires with graded diameter. We have found a new method for graded band gap semiconductor formation using an elementary semiconductor. Graded change of band gap arises due to Quantum confinement effect.

4

LI, KEYAN, YANJU LI, and DONGFENG XUE. "BAND GAP PREDICTION OF ALLOYED SEMICONDUCTORS." Functional Materials Letters 04, no. 03 (September 2011): 217–19. http://dx.doi.org/10.1142/s179360471100210x.

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We have proposed an efficient method to quantitatively calculate the band gap values of ternary A x B 1-x C and AB x C 1-x alloyed semiconductors in terms of the dopant concentration x and some fundamental atom parameters such as electronegativity. The calculated band gap values of some typical alloyed semiconductors can agree well with the available experimental data. Taking Mg x Zn 1-x O and Cd x Zn 1-x O as examples, the composition dependent band gap values of alloys with both wurtzite and rocksalt structures were quantitatively predicted. This work provides a guideline in compositionally tuning the band gap of alloyed semiconductors, which will greatly facilitate the band gap engineering of semiconductors.

5

Nag, B. R. "Direct band-gap energy of semiconductors." Infrared Physics & Technology 36, no. 5 (August 1995): 831–35. http://dx.doi.org/10.1016/1350-4495(95)00023-r.

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6

Keßler, P., K. Lorenz, and R. Vianden. "Implanted Impurities in Wide Band Gap Semiconductors." Defect and Diffusion Forum 311 (March 2011): 167–79. http://dx.doi.org/10.4028/www.scientific.net/ddf.311.167.

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Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are already very successful on a commercial scale. Indium in nitride ternary and quaternary alloys plays a special role; however, the mechanisms leading to more efficient light emission in In-containing nitrides are still under debate. Therefore, the behaviour of In in GaN and AlN, the nitride semiconductor with the largest bandgap is an important field of study. In is also an important impurity in another wide band gap semiconductor – the II-VI compound ZnO where it acts as an n-type dopant. In this context the perturbed angular correlation technique using implantation of the probe111In is a unique tool to study the immediate lattice environment of In in the wurtzite lattice of these wide band gap semiconductors. For the production of GaN and ZnO based electronic circuits one would normally apply the ion implantation technique, which is the most widely used method for selective area doping of semiconductors like Si and GaAs. However, this technique suffers from the fact that it invariably produces severe lattice damage in the implanted region, which in nitride semiconductors has been found to be very difficult to recover by annealing. The perturbed angular correlation technique is employed to monitor the damage recovery around implanted atoms and the properties of hitherto known impurity – defect complexes will be described and compared to proposed structure models.

7

Jin, Haiwei, Li Qin, Lan Zhang, Xinlin Zeng, and Rui Yang. "Review of wide band-gap semiconductors technology." MATEC Web of Conferences 40 (2016): 01006. http://dx.doi.org/10.1051/matecconf/20164001006.

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8

Woods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson, and Andriy Zakutayev. "Correction to Wide Band Gap Chalcogenide Semiconductors." Chemical Reviews 120, no. 15 (August 3, 2020): 8035. http://dx.doi.org/10.1021/acs.chemrev.0c00643.

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9

Cam, Hoang Ngoc, Nguyen Van Hieu, and Nguyen Ai Viet. "Excitons in direct band gap cubic semiconductors." Annals of Physics 164, no. 1 (October 1985): 172–88. http://dx.doi.org/10.1016/0003-4916(85)90007-7.

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10

Salvatori, S. "Wide-band gap semiconductors for noncontact thermometry." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 1 (2001): 219. http://dx.doi.org/10.1116/1.1342007.

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11

Pearton, S. J., C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, et al. "Wide band gap ferromagnetic semiconductors and oxides." Journal of Applied Physics 93, no. 1 (January 2003): 1–13. http://dx.doi.org/10.1063/1.1517164.

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12

LI, KEYAN, YANJU LI, and DONGFENG XUE. "BAND GAP ENGINEERING OF CRYSTAL MATERIALS: BAND GAP ESTIMATION OF SEMICONDUCTORS VIA ELECTRONEGATIVITY." Functional Materials Letters 05, no. 02 (June 2012): 1260002. http://dx.doi.org/10.1142/s1793604712600028.

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We have developed empirical equations to quantitatively calculate the band gap values of binary ANB8-N and ternary ABC2 chalcopyrite semiconductors from the general viewpoint of chemical bonding processes upon electronegativity (EN). It is found that the band gap of crystal materials is essentially determined by the binding energy of chemical bonds to the bonding electrons, which can be effectively described by the average attractive abilities of two bonded atoms to their valence electrons and the delocalization degree of the valence electrons. The calculated band gap values of a large number of compounds can agree well with the available experimental data. This work provides us an efficient approach to quantitatively predict the band gap values of inorganic crystal materials on the basis of fundamental atom parameters such as EN, atomic radius, etc.

13

Lund, Mark W. "More than One Ever Wanted to Know about X-Ray Detectors Part VI: Alternate Semiconductors for Detectors." Microscopy Today 3, no. 5 (June 1995): 12–13. http://dx.doi.org/10.1017/s1551929500066116.

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X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconductors have been developed as x-ray detectors. In this article I will talk about narrow band gap semiconductors. Next time I will discuss large band gap semiconductors.

14

Zhao, Yang-Yang, and Si-Yuan Sheng. "The electronic and optical properties of Cs2BX6 (B = Zr, Hf) perovskites with first-principle method." PLOS ONE 18, no. 12 (December 22, 2023): e0292399. http://dx.doi.org/10.1371/journal.pone.0292399.

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The electronic structures and absorption properties of Cs2BX6 halide compounds are investigated with first principle calculation and exchange correlation functional of GGA-PBE. Pressure and halogen ion doping are employed to regulate band gap. All materials suffer transition from indirect to direct band gap semiconductors but with different phase transition pressure. Structural and band structure calculating results show that the value of phase transition pressure is mainly determined by the volume of octahedron. When the volume of vacancy octahedron is much less than B-ion octahedron, the lowest band point of B-d orbitals transforms to Γ point, then the indirect semiconductors transform into direct band gap semiconductors. Calculating results of optical absorption implied that the systems have obvious blue shift, which result in the optical properties reduced. Based on suitable band gap and higher absorption coefficient, Cs2ZrI4Br2 can be an ideal candidate for perovskites solar cells.

15

Pramanik, Md Bappi, Md Abdullah Al Rakib, Md Abubakor Siddik, and Shorab Bhuiyan. "Doping Effects and Relationship between Energy Band Gaps, Impact of Ionization Coefficient and Light Absorption Coefficient in Semiconductors." European Journal of Engineering and Technology Research 9, no. 1 (January 18, 2024): 10–15. http://dx.doi.org/10.24018/ejeng.2024.9.1.3118.

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The doping process is very important in semiconductor technology that is widely used in the production of electronic devices. The effects of doping on the resistivity, mobility and energy band gap of semiconductors are significant and can greatly impact the performance of electronic devices. This thesis aims to investigate the impact of doping on the resistivity, mobility, energy band gap, impact of ionization coefficient, and light absorption coefficient of semiconductors. The study involves an in-depth analysis of the electronic properties of doped semiconductors and their behavior in various conditions. This thesis will provide a comprehensive understanding of the impact of doping on the electronic properties of semiconductors. The energy band gap, impact of ionization coefficient, and Light absorption coefficient were observed in this thesis. In the experimental result, the relation between energy band gap and atomic density, light absorption coefficient and atomic density, impact ionization and atomic density, impact ionization coefficient and Light absorption coefficient, resistivity and mobility has been found.

16

Tu, Haoran, Jing Zhang, Zexuan Guo, and Chunyan Xu. "Biaxial strain modulated the electronic structure of hydrogenated 2D tetragonal silicene." RSC Advances 9, no. 72 (2019): 42245–51. http://dx.doi.org/10.1039/c9ra08634j.

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Hydrogenation can open the band gap of 2D tetragonal silicene, α-SiH is semiconductors with a direct band gap of 2.436 eV whereas β-SiH is indirect band gap of 2.286 eV. The band gap of α-SiH, β-SiH and γ-SiH can be modulated via biaxial strain.

17

Krivosheeva, A. V., and V. L. Shaposhnikov. "The structure and optical properties of semiconductor nitrides MgSiN<sub>2</sub>, MgGeN<sub>2</sub>, ZnSiN<sub>2</sub>, ZnGeN<sub>2</sub>." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 58, no. 4 (January 1, 2023): 424–30. http://dx.doi.org/10.29235/1561-2430-2022-58-4-424-430.

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Theoretical modeling within LDA, GGA, and PBE approximations was herein performed to determine the electronic band structures of MgGeN2, MgSiN2, ZnGeN2, and ZnSiN2 nitride compounds and their optical properties. It is established that the compounds with germanium are direct-gap semiconductors with the band gap values of 3.0 eV (MgGeN2) and 1.7 eV (ZnGeN2), while the silicon-based compounds are indirect-gap semiconductors with the band gap values of 4.6 eV (MgSiN2) and 3.7 eV (ZnSiN2). Optical properties analysis showed the prospects of using MgGeN2 and ZnGeN2 in optoelectronics.

18

Gusakov, Vasilii E. "A New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method." Solid State Phenomena 242 (October 2015): 434–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.434.

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Within the framework of the density functional theory, the method was developed to calculate the band gap of semiconductors. We have evaluated the band gap for a number of monoatomic and diatomic semiconductors (Sn, Ge, Si, SiC, GaN, C, BN, AlN). The method gives the band gap of almost experimental accuracy. An important point is the fact that the developed method can be used to calculate both localized states (energy deep levels of defects in crystal), and electronic properties of nanostructures.

19

Laks, D. B., Chris G. Van de Walle, Gertrude F. Neumark, and Sokrates T. Pantelides. "Native Defect Compensation in Wide-Band-Gap Semiconductors." Materials Science Forum 83-87 (January 1992): 1225–34. http://dx.doi.org/10.4028/www.scientific.net/msf.83-87.1225.

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20

John, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors." MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.

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ABSTRACTThe changes are brought in the elemental semiconductors Si and Ge by replacing them with II-VI and III-V binary analogs or their ternary analogs I-III-VI2 chalcopyrides and II-IV-V2 pnictides respectively. Such compounds exhibit transitions from their parent compound in terms of nature of band gaps (Eg) as indirect to direct in addition to the changes in the values of the Eg. These changes have direct consequence in their optical properties with degenerate states being lifted leading to crystal field splitting and so on. The Eg in ternary bulk semiconducting materials is engineered as a function of certain structural parameters such as anion position parameter (u), tetragonal compression parameter (η) through effective alloying. The contributions to Eg due to these effects are studied as band gap anomalies. The present paper discusses the results of the band gap engineering in some of the bulk ABC2(A= Cd; B=Si,Ge,Sn; C= P,As) semiconductors using theoretical methods. The influence of each of A, B and C atom is also discussed. The dependence of morphology of nano semiconducting particles and the band gap on the chemical environment, temperature is reported by us. The confinement energy of a compound which is the difference in energy between the bulk and nano forms is investigated.

21

Hebda, Maciej, Grażyna Stochel, Konrad Szaciłowski, and Wojciech Macyk. "Optoelectronic Switches Based on Wide Band Gap Semiconductors." Journal of Physical Chemistry B 110, no. 31 (August 2006): 15275–83. http://dx.doi.org/10.1021/jp061262b.

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22

Khurgin, Jacob B. "Band gap engineering for laser cooling of semiconductors." Journal of Applied Physics 100, no. 11 (2006): 113116. http://dx.doi.org/10.1063/1.2395599.

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23

Pong, C., N. M. Johnson, R. A. Street, J. Walker, R. S. Feigelson, and R. C. De Mattei. "Hydrogenation of wide‐band‐gap II‐VI semiconductors." Applied Physics Letters 61, no. 25 (December 21, 1992): 3026–28. http://dx.doi.org/10.1063/1.107998.

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24

Sontakke, Kirti, Nischhal Yadav, and S. Ghosh. "Transient Brillouin gain in direct band gap semiconductors." Journal of Physics: Conference Series 365 (May 18, 2012): 012043. http://dx.doi.org/10.1088/1742-6596/365/1/012043.

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25

Goldbach, Andreas, Marie-Louise Saboungi, Lennox E. Iton, and David L. Price. "Approach to band gap alignment in confined semiconductors." Journal of Chemical Physics 115, no. 24 (December 22, 2001): 11254–60. http://dx.doi.org/10.1063/1.1416125.

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26

Iliadis, A. A., R. D. Vispute, T. Venkatesan, and K. A. Jones. "Ohmic metallization technology for wide band-gap semiconductors." Thin Solid Films 420-421 (December 2002): 478–86. http://dx.doi.org/10.1016/s0040-6090(02)00834-9.

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27

Mahanti, S. D., Khang Hoang, and Salameh Ahmad. "Deep defect states in narrow band-gap semiconductors." Physica B: Condensed Matter 401-402 (December 2007): 291–95. http://dx.doi.org/10.1016/j.physb.2007.08.169.

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28

Ram, R. S., O. M. Prakash, and A. N. Pandey. "Photoacoustic determination of energy band gap of semiconductors." Pramana 28, no. 3 (March 1987): 293–97. http://dx.doi.org/10.1007/bf02845606.

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29

Walsh, Aron, John Buckeridge, C. Richard A. Catlow, Adam J. Jackson, Thomas W. Keal, Martina Miskufova, Paul Sherwood, et al. "Limits to Doping of Wide Band Gap Semiconductors." Chemistry of Materials 25, no. 15 (July 31, 2013): 2924–26. http://dx.doi.org/10.1021/cm402237s.

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30

Singh, M., and P. R. Wallace. "Inter-band magneto-optics in narrow-gap semiconductors." Journal of Physics C: Solid State Physics 20, no. 14 (May 20, 1987): 2169–81. http://dx.doi.org/10.1088/0022-3719/20/14/018.

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31

Jain, S. C., J. M. McGregor, and D. J. Roulston. "Band‐gap narrowing in novel III‐V semiconductors." Journal of Applied Physics 68, no. 7 (October 1990): 3747–49. http://dx.doi.org/10.1063/1.346291.

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32

Jones, Tony C. "Precursors for wide band gap II–VI semiconductors." Euro III-Vs Review 3, no. 3 (June 1990): 32–33. http://dx.doi.org/10.1016/0959-3527(90)90220-n.

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33

Henriques, A. B., S. Obukhov, L. C. D. Gonçalves, B. Yavich, and A. B. Henriques. "Band Gap Renormalization in Periodically Delta-Doped Semiconductors." physica status solidi (a) 164, no. 1 (November 1997): 133–36. http://dx.doi.org/10.1002/1521-396x(199711)164:1<133::aid-pssa133>3.0.co;2-c.

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34

Das, Atanu, and Arif Khan. "Carrier Concentrations in Degenerate Semiconductors Having Band Gap Narrowing." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 193–98. http://dx.doi.org/10.1515/zna-2008-3-413.

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The density-of-states effective mass approximation and the conduction-band effective mass approximation are employed to formulate carrier concentrations and the diffusivity-mobility relationship (DMR) for heavily doped n-semiconductors exhibiting band gap narrowing. These are very suitable for the investigation of electrical transport also in heavily doped p-semiconductors. Numerical calculations indicate that the DMR depends on a host of parameters including the temperature, carrier degeneracy, and the non-parabolicity of the band structure.

35

Xu, Chunyan, Jing Zhang, Ming Guo, and Lingrui Wang. "Modulation of the electronic property of hydrogenated 2D tetragonal Ge by applying external strain." RSC Advances 9, no. 40 (2019): 23142–47. http://dx.doi.org/10.1039/c9ra04655k.

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α- and β-GeH are semiconductors with direct band gap of 0.953 eV and indirect gap of 2.616 eV, respectively. Direct band gap of α-GeH reduces from 2.008 to 0.036 eV as strain increase from −7 to 7%, indirect band gap of β-GeH is changed slightly.

36

Chu, Jun‐hao, Zheng‐yu Mi, and Ding‐yuan Tang. "Band‐to‐band optical absorption in narrow‐gap Hg1−xCdxTe semiconductors." Journal of Applied Physics 71, no. 8 (April 15, 1992): 3955–61. http://dx.doi.org/10.1063/1.350867.

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37

Wang, R. Z., B. Wang, H. Wang, H. Zhou, A. P. Huang, M. K. Zhu, H. Yan, and X. H. Yan. "Band bending mechanism for field emission in wide-band gap semiconductors." Applied Physics Letters 81, no. 15 (October 7, 2002): 2782–84. http://dx.doi.org/10.1063/1.1511809.

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38

Apostolova, Iliana, Angel Apostolov, and Julia Wesselinowa. "Band Gap Tuning in Transition Metal and Rare-Earth-Ion-Doped TiO2, CeO2, and SnO2 Nanoparticles." Nanomaterials 13, no. 1 (December 28, 2022): 145. http://dx.doi.org/10.3390/nano13010145.

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The energy gap Eg between the valence and conduction bands is a key characteristic of semiconductors. Semiconductors, such as TiO2, SnO2, and CeO2 have a relatively wide band gap Eg that only allows the material to absorb UV light. Using the s-d microscopic model and the Green’s function method, we have shown two possibilities to reduce the band-gap energy Eg—reducing the NP size and/or ion doping with transition metals (Co, Fe, Mn, and Cu) or rare earth (Sm, Tb, and Er) ions. Different strains appear that lead to changes in the exchange-interaction constants, and thus to a decrease in Eg. Moreover, the importance of the s-d interaction, which causes room-temperature ferromagnetism and band-gap energy tuning in dilute magnetic semiconductors, is shown. We tried to clarify some discrepancies in the experimental data.

39

Klimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (August 29, 2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.

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The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gapEg= 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg= 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with widerEgwere obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequatep-type conductivity.

40

Lin, Der-Yuh, Hung-Pin Hsu, Cheng-Wen Wang, Shang-Wei Chen, Yu-Tai Shih, Sheng-Beng Hwang, and Piotr Sitarek. "Temperature-Dependent Absorption of Ternary HfS2−xSex 2D Layered Semiconductors." Materials 15, no. 18 (September 11, 2022): 6304. http://dx.doi.org/10.3390/ma15186304.

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In this study, we present the investigation of optical properties on a series of HfS2−xSex crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20–300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS2−xSex were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.

41

Li, Guowei, Ren Su, Jiancun Rao, Jiquan Wu, Petra Rudolf, Graeme R. Blake, Robert A. de Groot, Flemming Besenbacher, and Thomas T. M. Palstra. "Band gap narrowing of SnS2superstructures with improved hydrogen production." Journal of Materials Chemistry A 4, no. 1 (2016): 209–16. http://dx.doi.org/10.1039/c5ta07283b.

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42

Moram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.

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ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

43

Huo, Sitong, Shuqing Zhang, Qilin Wu, and Xinping Zhang. "Feature-Assisted Machine Learning for Predicting Band Gaps of Binary Semiconductors." Nanomaterials 14, no. 5 (February 28, 2024): 445. http://dx.doi.org/10.3390/nano14050445.

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Abstract:

The band gap is a key parameter in semiconductor materials that is essential for advancing optoelectronic device development. Accurately predicting band gaps of materials at low cost is a significant challenge in materials science. Although many machine learning (ML) models for band gap prediction already exist, they often suffer from low interpretability and lack theoretical support from a physical perspective. In this study, we address these challenges by using a combination of traditional ML algorithms and the ‘white-box’ sure independence screening and sparsifying operator (SISSO) approach. Specifically, we enhance the interpretability and accuracy of band gap predictions for binary semiconductors by integrating the importance rankings of support vector regression (SVR), random forests (RF), and gradient boosting decision trees (GBDT) with SISSO models. Our model uses only the intrinsic features of the constituent elements and their band gaps calculated using the Perdew–Burke–Ernzerhof method, significantly reducing computational demands. We have applied our model to predict the band gaps of 1208 theoretically stable binary compounds. Importantly, the model highlights the critical role of electronegativity in determining material band gaps. This insight not only enriches our understanding of the physical principles underlying band gap prediction but also underscores the potential of our approach in guiding the synthesis of new and valuable semiconductor materials.

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TREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Abstract:

Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.

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Bagraev, Nikolai T., A. D. Bouravleuv, A. A. Gippius, L. E. Klyachkin, and A. M. Malyarenko. "Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors." Defect and Diffusion Forum 194-199 (April 2001): 679–86. http://dx.doi.org/10.4028/www.scientific.net/ddf.194-199.679.

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Panday, Suman Raj, and Maxim Dzero. "Interacting fermions in narrow-gap semiconductors with band inversion." Journal of Physics: Condensed Matter 33, no. 27 (May 28, 2021): 275601. http://dx.doi.org/10.1088/1361-648x/abfc6e.

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Mitrovic, Ivona Z., Harry Finch, Leanne A. H. Jones, Vinod R. Dhanak, Adrian N. Hannah, Reza Valizadeh, Arne Benjamin B. Renz, Vishal Ajit Shah, Peter Michael Gammon, and P. A. Mawby. "(Invited) Rare Earth Oxides on Wide Band Gap Semiconductors." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1072. http://dx.doi.org/10.1149/ma2022-01191072mtgabs.

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Abstract:

Globally, most recent power electronics converter and device technology has been driven by the unprecedented demand seen within the automotive sector [1]. The latter demands power converters with near 100% energy efficiency, lightweight, compact and reliable. Wide band gap (WBG) semiconductor materials such as GaN and 4H-SiC have emerged as contenders to replace Si in many power electronics applications. Currently, GaN devices based on the high electron mobility transistor (HEMT) architecture are limited commercially to a maximum of 650 V [2,3]. GaN HEMTs have traditionally suffered from a poor thermal conductivity and the “current collapse” phenomenon, limiting their ability to operate within harsh environments. On the other hand, 4H-SiC has a few reliability issues that limit its ubiquitous application in the automotive sector [2]. Currently the GaN based Metal-Insulator-Semiconductor (MIS)-HEMT device is seen to demonstrate superior performance in power electronics applications over the Schottky gate counterpart, due to its inherently lower gate leakage current, together with the ability to provide larger forward gate voltage swing by engineering the threshold voltage between depletion and enhancement mode operation and also an improved gate-drain breakdown voltage. High band gap gate dielectric materials are preferable as they can provide higher tunnelling barriers for electrons and holes, which result in lower gate leakage current. Furthermore, high dielectric constant (high-k) material is also necessary for improved electrostatic control over the channel and improved on-current, which in-turn results in higher transconductance. In terms of SiC based devices, the use of SiO2 proves to be a bottleneck in exploiting full potential of SiC due to the low value of dielectric constant of SiO2 [4]. Since the oxide is subjected to an electric field that is ~2.5x the field in the semiconductor, the breakdown of SiO2 occurs first, and hence causes the breakdown of SiO2/4H-SiC based devices well below the critical electric field of SiC. This shortcoming led to the exploration of high-k dielectrics as gate stacks in 4H-SiC MIS based devices as well as for surface passivation. It is worth noting that SiO2 is the only dielectric commercially used for SiC devices largely due to the unavailability of a reliable high-k dielectric alternative. Most published results focus on use of Al2O3 and HfO2 films [5], however they have yet to become used mainstream in 4H-SiC devices. In this paper, two rare earth high-k oxides, Y2O3 and Sc2O3, both with dielectric constant >10, have been studied in terms of their suitability as gate dielectrics on GaN and 4H-SiC. The oxide films were prepared by radio frequency (RF) magnetron sputtering (Sc2O3) and ion gun sputtering (Y2O3). The substrates were cleaned with Kr ions with anode current of ~ 50 mA and accelerating voltage of 3 kV for 1-2 hours. Then metallic Y was sputtered using pressure of 1.5 x 10-5 mbar and current of 26 mA, which was followed by exposure to O2 to form Y2O3 films. Sc2O3 films were deposited using Moorfields nano-PVD (physical vapour deposition) equipment with circular Sc2O3 target of 99.99% purity using RF power of 60 W and a gas flow of 0.5 sccm for 3 nm film and 3 sccm for 40 nm film. The films were also deposited simultaneously on Si to be used as reference samples for variable angle spectroscopic ellipsometry (VASE) measurements to ascertain their thickness and optical properties. The X-ray photoelectron spectroscopy (XPS) was used to characterise comprehensively the oxide/semiconductor interface. The capacitance voltage measurements on MIS stacks were used to determine permittivity of deposited oxides. The complete band alignment of oxide/WBG semiconductor as well as comprehensive comparison to state of the art data will be presented and discussed in full paper. Acknowledgement. The UKIERI IND/CONT/G/17-18/18 and F.No.184-1/2018(IC) project funded by the British Council; UKRI GCRF GIAA award 2018/19 and EP/P510981/1, funded by the EPSRC, UK. References. [1] http://www.yole.fr/Compound_Semiconductor_Monitor_Q1.aspx. [2] Li et al., Materials 14, 5831 (2021); [3] Gonzalez et al. IEEE Trans. Ind. Electron. 67, 7375 (2020); [4] A. Siddiqui et al., J. Mater. Chem. C 9, 5055 (2021); [5] Bencherif et al., Appl. Phys. A 126, 854 (2020).

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Edgar, J. H. "Prospects for device implementation of wide band gap semiconductors." Journal of Materials Research 7, no. 1 (January 1992): 235–52. http://dx.doi.org/10.1557/jmr.1992.0235.

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Laks, D. B., C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides. "Role of native defects in wide-band-gap semiconductors." Physical Review Letters 66, no. 5 (February 4, 1991): 648–51. http://dx.doi.org/10.1103/physrevlett.66.648.

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Kalt, H., and M. Rinker. "Band-gap renormalization in semiconductors with multiple inequivalent valleys." Physical Review B 45, no. 3 (January 15, 1992): 1139–54. http://dx.doi.org/10.1103/physrevb.45.1139.

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