Books on the topic 'Wind band gap Semiconductors'

To see the other types of publications on this topic, follow the link: Wind band gap Semiconductors.

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 26 books for your research on the topic 'Wind band gap Semiconductors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse books on a wide variety of disciplines and organise your bibliography correctly.

1

1953-, Prelas Mark Antonio, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Research Workshop on Wide Band Gap Electronic Materials: Diamond, Aluminum Nitride, and Boron Nitride (1994 : Minsk, Belarus), eds. Wide band gap electronic materials. Dordrecht: Kluwer Academic Publishers, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

United States. National Aeronautics and Space Administration., ed. Further improvements in program to calculate electronic properties of narrow band gap materials: Final report. [Washington, DC: National Aeronautics and Space Administration, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Yang, Fan. Electromagnetic band gap structures in antenna engineering. New York: Cambridge University Press, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

T͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS (1998 Strasbourg, France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France, June 16-19, 1998. Amsterdam: Elsevier, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Yi-Gao, Sha, and United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Yi-Gao, Sha, and United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Trieste ICTP-IUPAP Semiconductor Symposium (7th 1992). Wide-band-gap semiconductors: Proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Edited by Van de Walle, Chris Gilbert. Amsterdam: North-Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Symposium, L. on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France 16-19 June 1998. Amsterdam: Elsevier, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

United States. National Aeronautics and Space Administration., ed. Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport. Bellingham, Wash: Society of Photo-Optical Instrumentation Engineers, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
11

T͡Sidilʹkovskiĭ, I. M. Ėlektronnyĭ spektr besshchelevykh poluprovodnikov. Sverdlovsk: Akademii͡a nauk SSSR, Uralʹskoe otd-nie, 1991.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
12

Vernon, Stanley. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research: Annual subcontract report, 15 April 1988-14 June 1990. Golden, Colo: National Renewable Energy Laboratory, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
13

1992), Trieste IUPAP-ICTP Semiconductor Symposium (7th. Wide-band-gap semiconductors: Proceedings of the seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Amsterdam: North Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
14

Wide-Band-Gap Semiconductors. Elsevier, 1993. http://dx.doi.org/10.1016/c2009-0-10257-x.

Full text
APA, Harvard, Vancouver, ISO, and other styles
15

C. G. Van de Walle. Wide-Band-gap Semiconductors. Elsevier Science & Technology Books, 2012.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
16

Pearton, Stephen J. Processing of 'Wide Band Gap Semiconductors. Elsevier Science & Technology Books, 2000.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
17

Gupta, Tapan Kumar. Band gap narrowing in heavily doped silicon. 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
18

Pearton, Stephen J. Processing of Wide Band Gap Semiconductors (Materials and Processing Technology). Noyes Publications, 2000.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
19

Wide band gap semiconductors: Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
20

Morkoç, Hadis. Handbook of Nitride Semiconductors and Devices, Vol. 2: Electronic and Optical Processes in Wide Band Gap Semiconductors. Springer, 2007.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
21

Heterojunction band discontinuities: Physics and device applications. Amsterdam: North-Holland, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
22

Walle, Chris G. Van De. Wide-Band-Gap Semiconductors: Proceedings of the Seventh Trieste Ictp-Iupap Semiconductor Symposium : International Centre for Theoretical Physics T. North-Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
23

Wang, Fei, Zheyu Zhang, and Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
24

Wang, Fei, Zheyu Zhang, and Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
25

Srivastava, Ashok, and Saraju Mohanty. Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
26

Basu, Prasanta Kumar, Bratati Mukhopadhyay, and Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

Full text
APA, Harvard, Vancouver, ISO, and other styles
Abstract:
Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.

To the bibliography