Relevant bibliographies by topics / Wide bandgap device

Academic literature on the topic 'Wide bandgap device'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Wide bandgap device"

1

Anderson, Travis J., Jennifer K. Hite, and Fan Ren. "Ultra-Wide Bandgap Materials and Device." ECS Journal of Solid State Science and Technology 6, no. 2 (2017): Y1. http://dx.doi.org/10.1149/2.0151702jss.

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Firdaus, Yuliar, Qiao He, Lia Muliani, Erlyta Septa Rosa, Martin Heeney, and Thomas D. Anthopoulos. "Charge transport and recombination in wide-bandgap Y6 derivatives-based organic solar cells." Advances in Natural Sciences: Nanoscience and Nanotechnology 13, no. 2 (May 11, 2022): 025001. http://dx.doi.org/10.1088/2043-6262/ac6c23.

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Abstract The power conversion efficiency of nonfullerene-based organic solar cells (OSCs) has recently exceeded 18%, thanks to the constant effort to identify the key properties governing the OSCs performance and development of better photovoltaic materials. With its superior properties, low-bandgap Y6 and its derivatives have emerged as one of the most popular nonfullerene acceptors (NFAs) for OSCs. In most cases, these low bandgap NFAs were based mainly on the most widely used and successful end-group 1,1-dicyanomethylene-3-indanone (IC). On the other hand, wide-bandgap Y6 derivatives are still scarce. Attempts to increase the NFA’s bandgap by incorporating electron-rich end-groups often end up with NFAs with poor performance. In this work, we compare two wide-bandgap Y6 derivatives with different end-groups, and their distinct device performance is correlated with their charge transport and recombination properties. Electronic measurements on solar cell devices and device physics results are presented to discuss charge transport and recombination within the device.
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Sugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.

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In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.
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Kumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.

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Abstract: Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 applications in devices are also discussed. Finally, a conclusion will be offered and future research perspectives on this key semiconducting material.
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Kumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.

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Abstract: Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 applications in devices are also discussed. Finally, a conclusion will be offered and future research perspectives on this key semiconducting material.
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Liyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.

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AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of holes at the interface, which increased recombination and limits the VOC. This recombination should be exacerbated for wider bandgap absorbers such as CZT and CMT. In this study, we use numerical simulations with SCAPS-1D software to investigate the band alignment in the front contacts for wider bandgap CdTe based absorbers. Results show that by replacing the CdS with a wide bandgap emitter layer, the VOC can be greatly improved, though under certain conditions, the fill factor remains sensitive to the location of the emitter conduction band. As a result, different transparent front contacts were also investigated to determine a device structure required to produce a high performance CZT or CMT top-cell for tandems devices.
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Yuan, Chao, Riley Hanus, and Samuel Graham. "A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures." Journal of Applied Physics 132, no. 22 (December 14, 2022): 220701. http://dx.doi.org/10.1063/5.0122200.

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Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and versatile tools for the characterization of wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductor thermal transport properties and device temperatures, respectively. This Review begins with the basic principles and standard implementations of pump–probe TR and TTI techniques, illustrating that when analyzing WBG and UWBG materials or devices with pump–probe TR or TTI, a metal thin-film layer is often required. Due to the transparency of the semiconductor layers to light sources with sub-bandgap energies, these measurements directly on semiconductors with bandgaps larger than 3 eV remain challenging. This Review then summarizes the general applications of pump–probe TR and TTI techniques for characterizing WBG and UWBG materials and devices where thin metals are utilized, followed by introducing more advanced approaches to conventional pump–probe TR and TTI methods, which achieve the direct characterizations of thermal properties on GaN-based materials and the channel temperature on GaN-based devices without the use of thin-film metals. Discussions on these techniques show that they provide more accurate results and rapid feedback and would ideally be used as a monitoring tool during manufacturing. Finally, this Review concludes with a summary that discusses the current limitations and proposes some directions for future development.
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Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.

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Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E) has invested in WBG semiconductors over the past ten years targeting the barriers to widespread adoption of WBGs in power electronics including material and device development. Under ARPA-E projects, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of WBGs. This includes super-junction devices and light triggered photoconductive devices for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Advanced WBG device ideas are additionally being explored including 3D device structures, WBG integrated circuits, and neutron detectors The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.
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Rahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee, and Siddharth Rajan. "High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.

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In this presentation, we will review recent work on the integration of high permittivity dielectrics with wide and and ultra-wide bandgap semiconductor devices to obtain improved high power and high frequency applications. We will first discuss the use of such structures for vertical power devices. The high permittivity dielectrics help to reduce surface fields and therefore prevent tunnel leakage from Schottky barriers [1]. Insertion of high permittivity dielectrics can also enable better field termination in high voltage vertical devices [2]. We will discuss recent results using such high permittivity dielectrics in vertical device structures based on Gallium Oxide, leading to high vertical electric fields up to 5.7 MV/cm being sustained in the structure. We will discuss the application of these high permittivity dielectrics for three-terminal high frequency [3] and high voltage [4,5] wide bandgap transistor applications. In lateral transistors built from wide and ultra-wide bandgap semiconductors, gate breakdown and non-uniform electric fields lead to average device breakdown fields that are significantly lower than material limits. We will show how high permittivity dielectrics inserted between the gate and drain can prevent gate breakdown, and also create much more uniform electric field profiles. An analytical model to explain this will be presented and compared with 2-dimensional device simulations. Finally, we will show experimental results for lateral devices from the high Al-composition AlGaN [6], -Ga2O3[7], and AlGaN/GaN [8] material systems, where in each case, we are able to achieve state-of-art breakdown performance for devices such as lateral Schottky diodes and transistors. For example, we have achieved up to 8.3 MV/cm field in high Al-content AlGaN devices, >5.5 MV/cm in -Ga2O3-based transistors, and >3 MV/cm lateral electric field in AlGaN/GaN HEMTs. The high breakdown fields also enable us to achieve state-of-art switching figures of merit in these devices. The authors acknowledge funding from NNSA ETI Consortium, AFOSR GAME MURI Program (Program Manager Dr. Ali Sayir), AFOSR (Program Manager Dr. Kenneth Goretta) NSF ECCS- and the DARPA DREAM program (Program Manger Dr. YK Chen), managed by ONR (Program Manager Dr. Paul Maki) for support of the work. References [1] Xia, Zhanbo, et al. "Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field." Applied Physics Letters 115.25 (2019): 252104. [2] Lee, Hyun-Soo, et al. "High-permittivity dielectric edge termination for vertical high voltage devices." Journal of Computational Electronics 19.4 (2020): 1538-1545. [3] Xia, Zhanbo, et al. "Design of transistors using high-permittivity materials." IEEE Transactions on Electron Devices 66.2 (2019): 896-900. [4] Kalarickal, Nidhin Kurian, et al. "Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors." IEEE Transactions on Electron Devices 68.1 (2020): 29-35. [5] Hanawa, Hideyuki, et al. "Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-k Passivation Layer." IEEE Transactions on Electron Devices 61.3 (2014): 769-775. [6] Razzak, Towhidur, et al. "BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm." Applied Physics Letters 116.2 (2020): 023507. [7] Kalarickal, Nidhin Kurian, et al. "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm." IEEE Electron Device Letters 42.6 (2021): 899-902. [8] Rahman, Mohammad Wahidur, et al. "Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance." Applied Physics Letters 119.1 (2021): 013504.
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Cheng, Zhe. "(Invited, Digital Presentation) Thermal Conductance across Heterogeneously Integrated Interfaces for Thermal Management of Wide and Ultra-Wide Bandgap Electronics." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1318. http://dx.doi.org/10.1149/ma2022-01311318mtgabs.

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Thermal management is important for wide and ultra-wide bandgap power electronics because overheating degrades device reliability and performance. High thermal conductivity substrates such as SiC and diamond facilitate heat dissipation of these devices while the thermal boundary resistance between devices and substrates accounts for a large portion of the total thermal resistance, which prevents devices from taking the full advantage of the high thermal conductivity of the substrates. Recently, heterogeneously integrated wide and ultra-wide bandgap semiconductor interfaces are found to have low thermal boundary resistances, which provides a new degree of freedom to design and fabricate thermally conductive interfaces for thermal management of related power devices. For example, GaN can be bonded with single crystal SiC or single crystal diamond directly at room temperature. β-Ga2O3 can be bonded with SiC with or without Al2O3 interfacial layers. Compared with growth, the bonded interfaces are not limited by lattice mismatch. Moreover, the room-temperature bonding process discussed in this talk can possibly eliminate the effects of thermal stress existed in high temperature growth or bonding techniques. Recent progresses in this sub-area will be discussed in this talk, especially thermal conductance across surface-activated bonded GaN and β-Ga2O3 interfaces measured by time-domain thermoreflectance (TDTR) and the effects of thermal boundary resistance values on device temperatures. Finally, the potential challenges will also be pointed out, for instance, high-throughput thermal measurements of buried interfaces, thermal property-structure relations of interfaces bonded under different conditions, theoretical understanding of interfacial thermal transport, and device demonstrations.
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Dissertations / Theses on the topic "Wide bandgap device"

1

Sathyanarayanan, Arvind Shanmuganaathan. "Analysis of Reflected Wave Phenomenon on Wide Bandgap Device Switching Performance." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu149273424426787.

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Shao, Ye. "Study of wide bandgap semiconductor nanowire field effect transistor and resonant tunneling device." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1448230793.

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Mahadik, Nadeemullah A. "Non-destructive x-ray characterization of wide-bandgap semiconductor materials and device structures." Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3404.

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Thesis (Ph.D.)--George Mason University, 2008.
Vita: p. 104. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Mar. 17, 2009). Includes bibliographical references (p. 99-103). Also issued in print.
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Deshpande, Amol Rajendrakumar. "Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625.

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Hontz, Michael Robert. "Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067.

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Swenberg, Johanes F. N. McGill T. C. McGill T. C. "Development of wide-bandgap II-VI semiconductor light-emitting device technology based on the graded injector design /." Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10122007-142152.

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Rafique, Subrina. "Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga2O3 by Low Pressure Chemical Vapor Deposition." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762.

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Allen, Noah Patrick. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2004. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model is developed to explain better the temperature dependent performance typically associated with a multi-Gaussian distribution of barrier heights at the metal-semiconductor interface [Section 3.1]. Application of this model gives researches a means of understanding not only the effective barrier distribution at the MS interface but also its voltage dependence. With this information, the consequence that material growth and device fabrication methods have on the electrical characteristics can be better understood. To show its applicability, the new model is applied to Ru/GaN Schottky diodes annealed at increasing temperature under normal laboratory air, revealing that the origin of excess reverse leakage current is attributed to the low-side inhomogeneous barrier distribution tail [Section 3.2]. Secondly, challenges encountered during MOCVD growth of low-doped GaN drift layers for high-voltage operation are discussed with focus given to ongoing research characterizing deep-level defect incorporation by deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) [Section 3.3 and 3.4]. It is shown that simply increasing TMGa so that high growth rates (>4 µm/hr) can be achieved will cause the free carrier concentration and the electron mobilities in grown drift layers to decrease. Upon examination of the deep-level defect concentrations, it is found that this is likely caused by an increase in 4 deep level defects states located at E C - 2.30, 2.70, 2.90 and 3.20 eV. Finally, samples where the ammonia molar flow rate is increased while ensuring growth rate is kept at 2 µm/hr, the concentrations of the deep levels located at 0.62, 2.60, and 2.82 eV below the conduction band can be effectively lowered. This accomplishment marks an exciting new means by which the intrinsic impurity concentration in MOCVD-grown GaN films can be reduced so that >20 kV capable devices could be achieved.
Doctor of Philosophy
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Allen, Noah P. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model is developed to explain better the temperature dependent performance typically associated with a multi-Gaussian distribution of barrier heights at the metal-semiconductor interface [Section 3.1]. Application of this model gives researches a means of understanding not only the effective barrier distribution at the MS interface but also its voltage dependence. With this information, the consequence that material growth and device fabrication methods have on the electrical characteristics can be better understood. To show its applicability, the new model is applied to Ru/GaN Schottky diodes annealed at increasing temperature under normal laboratory air, revealing that the origin of excess reverse leakage current is attributed to the low-side inhomogeneous barrier distribution tail [Section 3.2]. Secondly, challenges encountered during MOCVD growth of low-doped GaN drift layers for high-voltage operation are discussed with focus given to ongoing research characterizing deep-level defect incorporation by deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) [Section 3.3 and 3.4]. It is shown that simply increasing TMGa so that high growth rates (>4 µm/hr) can be achieved will cause the free carrier concentration and the electron mobilities in grown drift layers to decrease. Upon examination of the deep-level defect concentrations, it is found that this is likely caused by an increase in 4 deep level defects states located at E C - 2.30, 2.70, 2.90 and 3.20 eV. Finally, samples where the ammonia molar flow rate is increased while ensuring growth rate is kept at 2 µm/hr, the concentrations of the deep levels located at 0.62, 2.60, and 2.82 eV below the conduction band can be effectively lowered. This accomplishment marks an exciting new means by which the intrinsic impurity concentration in MOCVD-grown GaN films can be reduced so that >20 kV capable devices could be achieved.
Doctor of Philosophy
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10

Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.

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Books on the topic "Wide bandgap device"

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Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Konstanz: Hartung-Gorre, 2007.

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Szweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.

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Ferro, Gabriel. 2010 wide bandgap cubic semiconductors: From growth to devices : proceedings of the E-MRS Symposium F, Strasbourg, France, 8-10 June 2010. Edited by European Materials Research Society. Meeting, American Institute of Physics, and European Science Foundation. Melville, N.Y: American Institute of Physics, 2010.

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Symposium on Wide Bandgap Semiconductors and Devices (1995 Chicago, Ill.). Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). Pennington, NJ: Electrochemical Society, 1995.

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Philadelphia, Pa ). State-of-the-Art Program on Compound Semiconductors (36th 2002. State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II: Proceedings of the international symposia. Pennington, NJ: Electrochemical Society, 2002.

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State-of-the-Art, Program on Compound Semiconductors (47th 2007 Washington DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Pennington, NJ: Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (45rd 2006 Cancun, Mex.). State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 / editors, F. Ren ... [et al.]. Pennington, NJ: Electrochemical Society, 2006.

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Book chapters on the topic "Wide bandgap device"

1

Mazumder, S. K., A. Mojab, and H. Riazmontazer. "Optically-Switched Wide-Bandgap Power Semiconductor Devices and Device-Transition Control." In Physics of Semiconductor Devices, 57–65. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_14.

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Rafiqul Islam, Md, Roisul H. Galib, Montajar Sarkar, and Shaestagir Chowdhury. "Wide-Bandgap Semiconductor Device Technologies for High-Temperature and Harsh Environment Applications." In Harsh Environment Electronics, 1–29. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527813964.ch1.

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Kawakami, Yoichi, Satoshi Kamiyama, Gen-Ichi Hatakoshi, Takashi Mukai, Yukio Narukawa, Ichirou Nomura, Katsumi Kishino, et al. "Photonic Devices." In Wide Bandgap Semiconductors, 97–230. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_3.

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Miyamoto, Hironobu, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe, Akio Hiraki, Hirohisa Hiraki, Hideomi Koinuma, and Masao Katayama. "Electronic Devices." In Wide Bandgap Semiconductors, 231–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_4.

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Kumano, Hidekazu, Ikuo Suemune, Katsumi Kishino, Shizuo Fujita, Adarsh Sandhu, Nobuo Suzuki, and Kazuhiro Ohkawa. "Novel Nano-Heterostructure Materials and Related Devices." In Wide Bandgap Semiconductors, 281–327. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_5.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "MOS Transistors and Field Controlled Wide Bandgap Devices." In Semiconductor Power Devices, 341–90. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_9.

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Cavenett, B. C., K. A. Prior, S. Y. Wang, and J. Simpson. "Wide Bandgap II–VI Light Emitting Devices." In Optical Information Technology, 103–9. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78140-7_12.

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Singh, Rajan, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "RF Performance of Ultra-wide Bandgap HEMTs." In Emerging Trends in Terahertz Solid-State Physics and Devices, 49–63. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_4.

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Shimada, Ryoko, Ümit Özgür, and Hadis Morkoç. "Polariton Devices Based on Wide Bandgap Semiconductor Microcavities." In Nanoscale Photonics and Optoelectronics, 47–64. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7587-4_3.

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Gupta, K. M., and Nishu Gupta. "Overview of Crystals, Bonding, Imperfections, Atomic Models, Narrow and Wide Bandgap Semiconductors and, Semiconductor Devices." In Advanced Semiconducting Materials and Devices, 41–85. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_2.

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Conference papers on the topic "Wide bandgap device"

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"Wide bandgap." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994509.

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"Wide Bandgap Devices." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373634.

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"Wide bandgap devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354926.

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"Wide bandgap devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548291.

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"Wide bandgap devices." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551903.

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"Emerging wide-bandgap devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175547.

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"Wide-bandgap power devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548465.

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"Energy and wide bandgap." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872390.

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"Power and wide bandgap." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175533.

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"Wide bandgap/high speed devices." In 2012 70th Annual Device Research Conference (DRC). IEEE, 2012. http://dx.doi.org/10.1109/drc.2012.6257057.

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Reports on the topic "Wide bandgap device"

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Crawford, M. H., W. W. Chow, A. F. Wright, S. R. Lee, E. D. Jones, J. Han, and R. J. Shul. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), April 1999. http://dx.doi.org/10.2172/5901.

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Elhadj, S. Laser-Based Defect Reduction in Wide Bandgap Semiconductors Used in Radiation-Voltaics Devices: Radiation Hardening and Annealing. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1571731.

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