Journal articles: 'Wide-band Input Matching'

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Huang, Zhe-Yang, Chun-Chieh Chen, and Chung-Chih Hung. "Low-noise amplifier with narrow-band and wide-band input impedance matching design." Journal of the Chinese Institute of Engineers 38, no. 5 (February 25, 2015): 603–9. http://dx.doi.org/10.1080/02533839.2015.1010452.

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Galante-Sempere, David, Javier del Pino, Sunil Lalchand Khemchandani, and Hugo García-Vázquez. "Miniature Wide-Band Noise-Canceling CMOS LNA." Sensors 22, no. 14 (July 13, 2022): 5246. http://dx.doi.org/10.3390/s22145246.

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In this paper, a wide-band noise-canceling (NC) current conveyor (CC)-based CMOS low-noise amplifier (LNA) is presented. The circuit employs a CC-based approach to obtain wide-band input matching without the need for bulky inductances, allowing broadband performance with a very small area used. The NC technique is applied by subtracting the input transistor’s noise contribution to the output and achieves a noise figure (NF) reduction from 4.8 dB to 3.2 dB. The NC LNA is implemented in a UMC 65-nm CMOS process and occupies an area of only 160 × 80 μm2. It achieves a stable frequency response from 0 to 6.2 GHz, a maximum gain of 15.3 dB, an input return loss (S11) < −10 dB, and a remarkable IIP3 of 7.6 dBm, while consuming 18.6 mW from a ±1.2 V DC supply. Comparisons with similar works prove the effectiveness of this new implementation, showing that the circuit obtains a noteworthy performance trade-off.

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BEN AMOR, MERIAM, MOURAD LOULOU, SEBASTIEN QUINTANEL, and DANIEL PASQUET. "A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD." Journal of Circuits, Systems and Computers 22, no. 02 (February 2013): 1250088. http://dx.doi.org/10.1142/s0218126612500880.

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In this paper we present the design of a fully integrated low noise amplifier for WiMAX standard with AMS 0.35 μm CMOS process. This LNA is designed to cover the frequency range for licensed and unlicensed bands of the WiMAX 2.3–5.9 GHz. The proposed amplifier achieves a wide band input and output matching with S11 and S22 lower than -10 dB, a flat gain of 12 dB and a noise figure around 3.5 dB for the entire band and from the upper to the higher frequencies. The presented wide band LNA employs a Chebyshev filter for input matching and an inductive shunt feedback for output matching with a bias current of 15 mA and a supply voltage of 2.5 V.

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Hu, Robert, and Mark S. C. Yang. "Investigation of Different Input-Matching Mechanisms Used in Wide-Band LNA Design." International Journal of Infrared and Millimeter Waves 26, no. 2 (February 2005): 221–45. http://dx.doi.org/10.1007/s10762-005-3002-4.

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Seethur, Rashmi, Siva Yellampalli, and Shreedhar H. K. "Design of Common Gate Current-Reuse Noise Cancellation UWB Low Noise Amplifier in 90nm CMOS." International Journal of Electronics, Communications, and Measurement Engineering 11, no. 1 (January 1, 2022): 1–14. http://dx.doi.org/10.4018/ijecme.312257.

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In this paper, an ultra-wide band (UWB) low noise amplifier (LNA) is implemented by using 90nm RF CMOS technology. The designed LNA achieves high flat band gain (S21) and low noise figure (NF) in the frequency of interest. The proposed LNA operates in the frequency range of 3GHz to 8GHz. In this work, wide band matching is achieved by designing common gate configuration at the input stage. The current reuse and noise cancellation techniques are introduced to improve flat band gain and minimize both noise figure and power consumption. The noise figure is improved by cancelling dominant noise sources with additional hardware. The proposed LNA attains flat band gain of 26.5dB and input matching less than -12dB for entire UWB band. This work achieves noise figure of 2.1dB to 2.59dB in frequency band of interest. Additionally, power consumption of the circuit is 20mW at 1.8V supply voltage.

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ALAVI-RAD, HOSEIN, SOHEYL ZIABAKHSH, and MUSTAPHA C. E. YAGOUB. "A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS." Journal of Circuits, Systems and Computers 22, no. 07 (August 2013): 1350052. http://dx.doi.org/10.1142/s0218126613500527.

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In this paper, an ultra-wide band 0.18 μm CMOS common-gate low-noise amplifier (LNA) is presented. Designed in the ultra-wide band frequency range of 3.1–10.6 GHz, it uses a current-reused technique with modified input matching. This approach allowed obtaining a flat broadband gain of 12.75 ± 0.83 dB with an input reflection coefficient less than -5.5 dB, an output reflection coefficient less than -7 dB, and a noise figure less than 3.7 dB. Furthermore, the proposed low-power LNA consumes only 12.14 mW (excluding buffer) from a 1.2 V supply voltage.

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Heo, Bo-Ram, and Ickjin Kwon. "A Dual-Band Wide-Input-Range Adaptive CMOS RF–DC Converter for Ambient RF Energy Harvesting." Sensors 21, no. 22 (November 10, 2021): 7483. http://dx.doi.org/10.3390/s21227483.

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In this paper, a dual-band wide-input-range adaptive radio frequency-to-direct current (RF–DC) converter operating in the 0.9 GHz and 2.4 GHz bands is proposed for ambient RF energy harvesting. The proposed dual-band RF–DC converter adopts a dual-band impedance-matching network to harvest RF energy from multiple frequency bands. To solve the problem consisting in the great degradation of the power conversion efficiency (PCE) of a multi-band rectifier according to the RF input power range because the available RF input power range is different according to the frequency band, the proposed dual-band RF rectifier adopts an adaptive configuration that changes the operation mode so that the number of stages is optimized. Since the optimum peak PCE can be obtained according to the RF input power, the PCE can be increased over a wide RF input power range of multiple bands. When dual-band RF input powers of 0.9 GHz and 2.4 GHz were applied, a peak PCE of 67.1% at an input power of −12 dBm and a peak PCE of 62.9% at an input power of −19 dBm were achieved. The input sensitivity to obtain an output voltage of 1 V was −17 dBm, and the RF input power range with a PCE greater than 20% was 21 dB. The proposed design achieved the highest peak PCE and the widest RF input power range compared with previously reported CMOS multi-band rectifiers.

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PINO, J. DEL, SUNIL L. KHEMCHANDANI, ROBERTO DÍAZ-ORTEGA, R. PULIDO, and H. GARCÍA-VÁZQUEZ. "ON-CHIP INDUCTORS OPTIMIZATION FOR ULTRA WIDE BAND LOW NOISE AMPLIFIERS." Journal of Circuits, Systems and Computers 20, no. 07 (November 2011): 1231–42. http://dx.doi.org/10.1142/s0218126611007852.

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In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.

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Bonenberger, Christopher M. A., and Klaus W. Kark. "A Broadband Impedance-Matching Method for Microstrip Patch Antennas Based on the Bode-Fano Theory." Frequenz 72, no. 7-8 (June 26, 2018): 373–80. http://dx.doi.org/10.1515/freq-2018-0037.

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Abstract Considering the narrow bandwidth of microstrip antennas, but also their applicability in upcoming technologies, this paper addresses the problem of wide-band matching, the theoretical bounds on the matching bandwidth and low-cost and low-complexity matching strategies. In this context the Bode-Fano bounds of single mode, linearly polarized aperture-coupled microstrip antennas is evaluated, optimized and compared to the theoretical bounds on matching bandwidth of other common feeding technologies. A detailed study of the input impedance of aperture-coupled patch antennas shows how to widen the Fano bounds. Based on this, a straight-forward and effective method to optimize the Fano bound is given. After optimization of the antennas input impedance, basic matching techniques can be applied, to exploit the enlarged bandwidth potential. As an example a $\lambda/4$-transformer as matching element is proposed. Design equations and simulation and measurement results of X-band prototypes are given as verification.

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Hu, Shan Wen, Tao Chen, Huai Gao, Long Xing Shi, and G. P. Li. "An Advanced Traveling Wave Matching Network for DC-12GHz Variable Gain Amplifier Design." Applied Mechanics and Materials 321-324 (June 2013): 331–35. http://dx.doi.org/10.4028/www.scientific.net/amm.321-324.331.

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A traveling wave matching (TWM) network is proposed for broadband variable gain amplifier design. The TWM network lessens input return loss and noise figure dependence on VGA’s gain, which is adjusted by biasing of the gain control circuit. A wide band (DC to 12 GHz) VGA with the novel TWM network as input matching is implemented in 2μm InGaP/GaAs HBT (fT of 29.5GHz) technology with die size of 1×2 mm2. As gain control voltage sweeps, the VGA shows a gain tuned from -15 dB to 15 dB and an average noise figure ranging from 8dB to 6.5dB, while S11 (lower than -20dB) and S22 (lower than -10dB) almost unchanged over the operation frequency band.

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Elmeligy, Karim, and Hesham Omran. "Fast Design Space Exploration and Multi-Objective Optimization of Wide-Band Noise-Canceling LNAs." Electronics 11, no. 5 (March 5, 2022): 816. http://dx.doi.org/10.3390/electronics11050816.

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Design optimization of RF low-noise amplifiers (LNAs) remains a time-consuming and complex process. Iterations are needed to adjust impedance matching, gain, and noise figure (NF) simultaneously. The process can involve more iterations to adjust the non-linear behavior of the circuit which can be represented by the input-referred third-order intercept (IIP3). In this work, we present a variation-aware automated design and optimization flow for a wide-band noise-canceling LNA. We include the circuit non-linearity in the optimization flow without using a simulator in the loop. By describing the transistors using precomputed lookup tables (LUTs), a design database that contains 200,000 design points is generated in 3 s only without non-linearity computation and 10 s when non-linearity is taken into account. Using a gm/ID-based correct-by-construction design procedure, the generated design points automatically satisfy proper biasing, input matching, and gain matching requirements. The generated database enables the designer to visualize the design space and explore the design trade-offs. Moreover, multi-objective optimization across corners for a given set of specifications is applied to find the Pareto-optimal fronts of the design figures-of-merit. We demonstrate the presented flow using two design examples in a 65 nm process and the results are verified using Cadence Spectre.

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Lee, J. Y., J. H. Ham, Y. S. Lee, and T. Y. Yun. "CMOS LNA for full-band ultra-wideband systems using a simple wide input matching network." IET Microwaves, Antennas & Propagation 4, no. 12 (2010): 2155. http://dx.doi.org/10.1049/iet-map.2010.0096.

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Ribate, Mohamed, Rachid Mandry, Jamal Zbitou, Larbi El Abdellaoui, Ahmed Errkik, Mohamed Latrach, and Ahmed Lakhssassi. "Design of L-S band broadband power amplifier using microstip lines." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 5 (October 1, 2020): 5400. http://dx.doi.org/10.11591/ijece.v10i5.pp5400-5408.

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This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.

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Sung, Ha-Wuk, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, and Dong-Wook Kim. "C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness." Journal of Electromagnetic Engineering and Science 22, no. 6 (November 30, 2022): 678–85. http://dx.doi.org/10.26866/jees.2022.6.r.137.

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In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the transistor and series resistor-capacitor (RC) feedback between the gate and the drain of the transistor, we obtained stable amplifier operation and a compromised impedance trace for both input impedance matching and noise matching while suppressing performance degradation of the maximum available gain and minimum noise figure. The developed low-noise amplifier MMIC, which implements simple matching circuits by using biasing elements as matching elements, had a linear gain of more than 21.4 dB and a noise figure of less than 1.91 dB in the wide bandwidth of 4.3–7.4 GHz. Under the single-tone power test, the low-noise amplifier MMIC had an output P1dB of 14.3–20.1 dBm, and the two-tone intermodulation distortion measurement exhibited an input third-order intercept point (IIP3) of 2.2–5.6 dBm in the same frequency range as the above.

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Abbasizadeh, Hamed, Arash Hejazi, Behnam Samadpoor Rikan, Sang Yun Kim, Jongseok Bae, Jong Min Lee, Jong Ho Moon, et al. "A High-Efficiency and Wide-Input Range RF Energy Harvester Using Multiple Rectenna and Adaptive Matching." Energies 13, no. 5 (February 25, 2020): 1023. http://dx.doi.org/10.3390/en13051023.

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In this paper, a Radio Frequency (RF) energy harvester (EH) system for Internet of Things (IoT)-related applications is presented. The proposed EH architecture operates at 5.2 GHz band and utilizes multiple rectenna. This approach enhances the efficiency of the whole system over a wide dynamic RF input range. In the presented circuit, configuration of the rectenna is controlled by Field-Programmable Gate Array (FPGA) with respect to the input power level of the received RF input signal. In addition, an automatic adaptive matching based on the configuration of the rectenna, level of the received signal, and load current adjusts the matching network. The rectenna is realized through the Radio Frequency-Direct Current (RF-DC) converter composed of two Schottky diodes and generates the output DC voltage. Finally, a buck-boost converter provides the flattened and fixed voltage for the IoT and wearable devices. The 5.2 GHz band reconfigurable system demonstrates 67% high efficiency and 6.1 V output DC voltage where the power level of RF input is +20 dBm. The main application of the proposed structure is for charging wearable smart devices such as a smart watch and bracelet.

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Chang, Yi Cheng, Meng Ting Hsu, and Yu Chang Hsieh. "Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology." Applied Mechanics and Materials 479-480 (December 2013): 1014–17. http://dx.doi.org/10.4028/www.scientific.net/amm.479-480.1014.

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In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

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Li, J. Y., W. J. Lin, M. P. Houng, and L. S. Chen. "A Low Power Consumption and Wide-Band Input Matching CMOS Active Balun for UWB System Applications." Journal of Electromagnetic Waves and Applications 24, no. 11-12 (January 1, 2010): 1449–57. http://dx.doi.org/10.1163/156939310792149641.

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Hu, R. "An 8-20-GHz wide-band LNA design and the analysis of its input matching mechanism." IEEE Microwave and Wireless Components Letters 14, no. 11 (November 2004): 528–30. http://dx.doi.org/10.1109/lmwc.2004.837063.

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Ramya, T. Rama Rao, and Revathi Venkataraman. "Concurrent Multi-Band Low-Noise Amplifier." Journal of Circuits, Systems and Computers 26, no. 06 (March 5, 2017): 1750104. http://dx.doi.org/10.1142/s0218126617501043.

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With rapid expansions of wireless communications, requirements for transceivers that support concurrent multiple services are continuously increasing and demanding design of a concurrent low-noise amplifier (LNA) with low noise figure (NF), high gain, and high linearity over a wide frequency range for various wireless applications. The proposed work focuses on a concurrent multi-band LNA that works at navigational frequencies, namely, of 1.2[Formula: see text]GHz and 1.5[Formula: see text]GHz, wireless communication frequencies, namely, of 2.45[Formula: see text]GHz and 3.3[Formula: see text]GHz, dedicated short range communication (DSRC) frequency of 5.8[Formula: see text]GHz for the vehicular communication applications. This circuit has a distinct input matching network which resonates at all desired five frequency bands and is achieved by adapting frequency transformation method. To accomplish simultaneous reception of the desired penta-band, the output matching is designed with simple LC matching network with the aid of load-pull methodology.

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Gao, Mingming, Gaoyang Xu, and Jingchang Nan. "Design of Concurrent Tri-Band High-Efficiency Power Amplifier Based on Wireless Applications." Electronics 11, no. 21 (October 30, 2022): 3544. http://dx.doi.org/10.3390/electronics11213544.

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To meet the existing requirements of multiband communication and improve the efficiency and performance of communication RF modules, a concurrent tri-band high-efficiency power amplifier operating in three frequency bands is proposed. The input and output impedance values of concurrent power amplifier is analyzed, and the input and output-matching circuit and bias circuit are designed. Through the impedance compensation principle, the impedance matching of three frequency bands is realized, and the amplifier can maintain high power and high efficiency at three arbitrary wide interval frequencies. To this end, a simultaneous tri-band power amplifier is designed and tested by using transistor CGH40010F. The experimental results show that the peak power of the designed simultaneous tri-band high-efficiency power amplifier is more than 10 W, the power-added efficiency reaches 55~69%, and the amplification gain is about 10 dB at three frequency bands of 2.2, 2.6, and 3.5 GHz. The design of concurrent tri-band high-efficiency power amplifier is flexible, the calculation of microstrip line parameters is simple, and it can work in three frequency bands simultaneously. It provides an effective structure scheme for designing concurrent power amplifiers in transmitting systems.

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Naumovich, N. M., A. P. Joubko, M. V. Davydov, and O. S. Maltsev. "WIDEBAND TRANSFORMER FOR MATCHING OF LOW-IMPEDANCE LOADS IN VERY HIGH FREQUENCY RANGE." Doklady BGUIR, no. 7-8 (December 29, 2019): 43–49. http://dx.doi.org/10.35596/1729-7648-2019-126-8-43-49.

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The article presents the results of preliminary research in the wideband transformer development for matching low-ohms loads in the very high frequency band with the use of a coupled transmission lines. The transmission line was produced with the using of a polyimide in the form of flexible printed circuit board. This way may be useful for wideband matching different cascades with custom values of input and output impedance in the wide band of frequencies and powers with use of a defining impedance capability with a load character in mind. On the first stage, the computer simulation of transformer with a transformer ratio 4:1 in the band (40–240 MHz) was completed for limiting values of input and output resistances – 50 and 12,5 Ohms respectively. Results of simulation give us the data about constructive parameters of the transmission line. The measurement technique for insertion loss was worked out. The reason of that is an impossibility of appliance standard methods with using a network vector analyzer. The prototyping was done and values of the standing wave ratio and inserting losses were obtained for different levels of the input power. According to received data, it can be affirmed, that the manufactured transformer provides the standing wave ratio better (lower) that two. Inserting losses vary from 0,02 to 1,54 dB depending from a input power level (1– 1000 mW). The obtained results afford ground for working continuation in this field – a development of wideband transformers for matching of low-ohms loads.

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Manjula, S., M. Malleshwari, and M. Suganthy. "Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver." International Journal of Engineering & Technology 7, no. 2.24 (April 25, 2018): 448. http://dx.doi.org/10.14419/ijet.v7i2.24.12132.

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This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance. For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.

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Doo, Jihoon, Jongyoun Kim, and Jinho Jeong. "D-Band Frequency Tripler Module Using Anti-Parallel Diode Pair and Waveguide Transitions." Electronics 9, no. 8 (July 27, 2020): 1201. http://dx.doi.org/10.3390/electronics9081201.

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In this paper, D-band (110–170 GHz) frequency tripler module is presented using anti-parallel GaAs Schottky diode pair and waveguide-to-microstrip transitions. The anti-parallel diode pair is used as a nonlinear device generating harmonic components for Q-band input signal (33–50 GHz). The diode is zero-biased to eliminate the bias circuits and thus minimize the number of circuit components for low-cost hybrid fabrication. The anti-parallel connection of two identical diodes effectively suppresses DC and even harmonics in the output. Furthermore, the first and second harmonics of Q-band input signal are cut off by D-band rectangular waveguide. Input and output impedance matching networks are designed based on the optimum impedances determined by harmonic source- and load-pull simulations using the developed nonlinear diode model. Waveguide-to-microstrip transitions at Q- and D-bands are also designed using E-plane probe to package the frequency tripler in the waveguide module. The compensation circuit is added to reduce the impedance mismatches by bond-wires connecting two separate substrates. The fabricated frequency tripler module produces a maximum output power of 5.4 dBm at 123 GHz under input power of 20.5 dBm. A 3 dB bandwidth is as wide as 22.5% from 118.5 to 148.5 GHz at the input power of 15.0 dBm. This result corresponds to the excellent bandwidth performance with a conversion gain comparable to the previously reported frequency tripler operating at D-band.

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Kaya, Adnan. "Wide-band compact microwave transistor amplifier methodology and the analysis of its input-matching mechanism using negative impedance converter." Microwave and Optical Technology Letters 50, no. 1 (2007): 192–97. http://dx.doi.org/10.1002/mop.23046.

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Nguyen Huu Tho. "A 1.8 to 4 GHz inductor-less highly linear CMOS LNA for wire-less receivers." Journal of Military Science and Technology, no. 76 (December 12, 2021): 11–20. http://dx.doi.org/10.54939/1859-1043.j.mst.76.2021.11-20.

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This paper presents an inductor-less wide-band highly linear low-noise amplifier (LNA) for wire-less receivers. The inductor-less LNA consists of a complementary current-reuse common source ampliﬁer combined with a low-current active feedback to obtain wide range input impedance matching and low noise figure. In our LNA, a degeneration resistor is utilized to improve linearity of the LNA. Furthermore, we designed a bypass mode for the LNA to extend the range of its applications. The proposed LNA is implemented in 28 nm CMOS process. It has a gain of 14.9 dB and a bandwidth of 2.2 GHz. The noise ﬁgure (NF) is 1.95 dB and the third-order input intercept point (IIP3) is 24.8 dBm at 2.3 GHz. It consumes 17.2 mW at a 0.9-V supply and has an area of 0.011 mm2.

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Hoi, Tran Van, Ngo Thi Lanh, Nguyen Xuan Truong, Nguyen Huu Duc, and Bach Gia Duong. "Design of a Front-End for Satellite Receiver." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 5 (October 1, 2016): 2282. http://dx.doi.org/10.11591/ijece.v6i5.10480.

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<p>This paper focuses on the design and implementation of a front-end for a Vinasat satellite receiver with auto-searching mechanism and auto-tracking satellite. The front-end consists of a C-band low-noise block down-converter and a L-band receiver. The receiver is designed to meet the requirements about wide-band, high sensitivity, large dynamic range, low noise figure. To reduce noise figure and increase bandwidth, the C-band low-noise amplifier is designed using T-type of matching network with negative feedback and the L-band LNA is designed using cascoded techniques. The local oscillator uses a voltage controlled oscillator combine phase locked loop to reduce the phase noise and select channels. The front-end has successfully been designed and fabricated with parameters: Input frequency is C-band; sensitivity is greater than -130 dBm for C-band receiver and is greater than -110dBm for L-band receiver; output signals are AM/FM demodulation, I/Q demodulation, baseband signals.</p>

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Hoi, Tran Van, Ngo Thi Lanh, Nguyen Xuan Truong, Nguyen Huu Duc, and Bach Gia Duong. "Design of a Front-End for Satellite Receiver." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 5 (October 1, 2016): 2282. http://dx.doi.org/10.11591/ijece.v6i5.pp2282-2290.

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<p>This paper focuses on the design and implementation of a front-end for a Vinasat satellite receiver with auto-searching mechanism and auto-tracking satellite. The front-end consists of a C-band low-noise block down-converter and a L-band receiver. The receiver is designed to meet the requirements about wide-band, high sensitivity, large dynamic range, low noise figure. To reduce noise figure and increase bandwidth, the C-band low-noise amplifier is designed using T-type of matching network with negative feedback and the L-band LNA is designed using cascoded techniques. The local oscillator uses a voltage controlled oscillator combine phase locked loop to reduce the phase noise and select channels. The front-end has successfully been designed and fabricated with parameters: Input frequency is C-band; sensitivity is greater than -130 dBm for C-band receiver and is greater than -110dBm for L-band receiver; output signals are AM/FM demodulation, I/Q demodulation, baseband signals.</p>

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Morshed, Khaled M., Debabrata K. Karmokar, and Karu P. Esselle. "Antennas for Licensed Shared Access in 5G Communications with LTE Mid- and High-Band Coverage." Sensors 23, no. 4 (February 13, 2023): 2095. http://dx.doi.org/10.3390/s23042095.

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Two novel antennas are presented for mobile devices to enable them to access both licensed shared access (LSA) bands (1452–1492 and 2300–2400 MHz) and all the long-term evolution (LTE) mid (1427–2690 MHz) and high (3400–3800 MHz) bands, together with the GSM1800, GSM1900, UMTS, and 3.3 GHz WiMAX bands. These antennas do not require any passive or active lumped elements for input impedance matching. One of them is a dual-band antenna and the other is a wideband antenna. Both antennas have high efficiency in all the LSA bands, as well as the mid- and high-LTE bands, and nearly omnidirectional radiation patterns in the mid band. In the high band, the radiation patterns of the wideband antenna are less directional than those of the dual-band antenna. The wideband antenna was fabricated and tested and the measurements demonstrated that it had good wideband performance in a wide frequency range from 1.37 to 4 GHz, covering all the above-mentioned bands.

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Zhao, Jinxiang, Feng Wang, Hanchao Yu, Shengli Zhang, Kuisong Wang, Chang Liu, Jing Wan, Xiaoxin Liang, and Yuepeng Yan. "Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks." Electronics 11, no. 4 (February 18, 2022): 633. http://dx.doi.org/10.3390/electronics11040633.

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This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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Balani, Warsha, Mrinal Sarvagya, Tanweer Ali, Ajit Samasgikar, Pradeep Kumar, Sameena Pathan, and Manohara Pai M. Pai M M. "A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications." Micromachines 12, no. 12 (December 7, 2021): 1520. http://dx.doi.org/10.3390/mi12121520.

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This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

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31

Islamov, I., and E. Humbataliyev. "General Approaches to Solving Problems of Analysis and Synthesis of Directional Properties of Antenna Arrays." Advanced Electromagnetics 11, no. 4 (October 27, 2022): 22–33. http://dx.doi.org/10.7716/aem.v11i4.2060.

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The work carried out the calculation and synthesis of antenna arrays used in radio-electronic complexes on unmanned aerial vehicles. The analytical model is designed to find asymptotic estimates of the polarization components of the electric field of the grating in the far zone of the carrier surface; the results obtained with its use are the initial data for constructing a technique for the numerical solution of a boundary value problem for a grating on a carrier surface in the CST MWS electrodynamic simulation environment. The synthesis of gratings with the maximum achievable coefficient of directional action is carried out with the control of radiation patterns at a given set of angles. A two-mirror antenna system has been calculated. It is shown that with an increase in the number of re-reflections taken into account, the convergence of the result for the calculated characteristics of the antenna is observed. To test the proposed method, the same antenna was calculated using the integral equation method. The comparison showed a high degree of agreement between the results obtained by two different methods. The results of the simulation based on a software algorithm designed to quantify the input matching at the input of a multichannel frequency-scanning antenna array power divider are presented. It was found that when performing wide-angle scanning in a relative frequency band of more than a few percent, the disadvantage of the known method for eliminating the normal effect is a sharp deterioration in matching in the lower and upper frequencies of the operating range. A new method is proposed based on an automated iterative process of optimizing the divider geometry, which makes it possible to obtain an acceptable match over the entire operating frequency band. The feasibility of switching from a serial power divider construction scheme to a series-parallel scheme is analyzed for wide-angle scanning in a relative frequency band of about 5%.

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32

Lee, Chieh-Sen, Chi-Lin Tsai, and Chin-Lung Yang. "Novel Cross-Type Network for Wide-Tuning-Range Reconfigurable Multiband Antennas." International Journal of Antennas and Propagation 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/741960.

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This paper presents a cross-type network design with a novel reconfigurable functionality to realize a tunable multiband antenna. By attaching a reconfigurable network at the feeding port of a broadband antenna, multi-input impedance adjustment enables the production of multimatching operating bands. Each band can be independently controlled by a single component with a considerably wide tuning range and high selectivity. The experiments in this study involved using an ultra-wideband (UWB) antenna connected to the proposed cross-type network. The tunable antenna operates in a dual band offL(1.39 to 2.34 GHz) andfH(2.1 to 3.6 GHz) with tunable frequency ratios of 168% and 132%, respectively. The average bandwidths atfLandfHare approximately 50 MHz and 148 MHz, respectively, implying narrowband operation. The measured radiation pattern revealed that the tunable antenna exhibits a nearly omnidirectional radiation pattern at both 1.8 and 3.5 GHz. The network circuit architecture can be extended to the multiband function type by adopting this matching approach. The amount of shunt matches determines the number of operation bands.

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Kim, Byungwook, and Sanggeun Jeon. "A Full Ka-Band CMOS Amplifier Using Inductive Neutralization with a Flat Gain of 13 ± 0.2 dB." Applied Sciences 12, no. 9 (May 9, 2022): 4782. http://dx.doi.org/10.3390/app12094782.

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This paper presents a CMOS wideband amplifier operating in the full Ka-band, with a low gain variation. An inductive neutralization is applied to the amplifier to compensate for the gain roll-off in the high-frequency region. Neutralization inductance is carefully determined considering the tradeoff between stability and gain. To achieve a low gain variation over the full Ka-band, the amplifier employs the frequency staggering technique in which impedance matching for three gain stages is performed at different frequencies of 26, 34, and 42 GHz. The experimental results show that a peak gain of 13.2 dB is achieved at 39.2 GHz. The 3 dB bandwidth is from 23.5 to 41.7 GHz, which fully covers the Ka-band. Especially, the gain ripple of the amplifier is only 13 ± 0.2 dB over a wide bandwidth from 26.2 to 40.2 GHz. The input and output return loss values are better than −10 dB from 26.3 to 40.1 GHz and from 25.3 to 50 GHz, respectively. The DC power consumption is 18.6 mW.

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34

Wu, Chang-Ju, I.-Fong Chen, Chia-Mei Peng, Wen-Yi Tsai, and Jwo-Shiun Sun. "A Compact Fractal-Shaped O-Ring Monopole Antenna for Modern Broadband Wireless Applications." WSEAS TRANSACTIONS ON ELECTRONICS 12 (August 24, 2021): 93–99. http://dx.doi.org/10.37394/232017.2021.12.13.

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In this letter, the design of a compact planar Fractal-shaped O-ring monopole antenna based on the Sierpinski carpet concept is studied and proposed for modern broadband wireless applications. The planar fractal-shaped O-ring monopole antenna is on the basis of Sierpinski category construction and then modifies the state of the plane inward with a radius of 27mm over the two iterations. The antenna structure is low profile and easy to be fabricated, and it has performed the simulation and measurement with the result VSWR ≤ 2 that can achieve a wide impedance bandwidth 636% from the frequency band 1.57GHz ~ 10GHz. The geometric scale factor of the Sierpinski fractal is according to the same scale element that defines the geometrical self-similarity. In our experiments, the results show that use of fractal-shaped O-ring into monopole antenna structure can effectively improve input impedance matching, and obtain a larger bandwidth and better radiation pattern, while also having predictable multi-band characteristics.

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35

Ruslan Hadi, Noor Syakirah, Zubaida Yusoff, Md Golam Sadeque, Shaiful Jahari Hashim, and Muhammad Akmal Chaudhary. "High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM." Bulletin of Electrical Engineering and Informatics 9, no. 5 (October 1, 2020): 1899–906. http://dx.doi.org/10.11591/eei.v9i5.2226.

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The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized on an FR-4 substrate to keep the cost as low as possible. A 10W GaN HEMT CGH40010 transistor from Cree has been used for this RFPA design.

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36

Kouhalvandi, Lida. "Directly Matching an MMIC Amplifier Integrated with MIMO Antenna through DNNs for Future Networks." Sensors 22, no. 18 (September 19, 2022): 7068. http://dx.doi.org/10.3390/s22187068.

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Due to the exponential growth of data communications, linearity specification is deteriorating and, in high frequency systems, impedance transformation leading to power delivering from power amplifiers (PAs) to antennas is becoming an increasingly important concept. Intelligent-based optimization methods can be a suitable solution for enhancing this characteristic in the transceiver systems. Herein, to tackle the problems of linearity and impedance transformations, deep neural network (DNN)-based optimizations are employed. In the first phase, the antenna is modeled through the DNN with using the long short-term memory (LSTM) leading to forecast the load impedances in the a wide frequency band. Afterwards, the PA is modeled and optimized through another LSTM-based DNN using Multivariate Newton’s Method where the optimal drain impedances are predicted from the first DNN (i.e., modeled antenna). The whole optimization methodology is executed automatically leading to enhance linearity specification of the whole system. For proving the novelty of the proposed method, monolithic microwave integrated circuit (MMIC) along with the multiple-input multiple-output (MIMO) antenna is designed, modeled, and optimized concurrently in the frequency band from 7.49 GHz to 12.44 GHz. The proposed method leads to enhancing the linearity of the transceiver in an effective way where DNN-based PA model gives rise to a solution for achieving the most optimal drain impedance through the modeled DNN-based antenna.

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37

Wang, Qiang, and Yan Zhang. "Design of a Compact UWB Antenna with Triple Band-Notched Characteristics." International Journal of Antennas and Propagation 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/892765.

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A new compact ultra-wideband (UWB) antenna with triband-notched characteristics is presented. The structure of the proposed antenna is simple and symmetric. A modified ground is introduced to obtain a wide impedance bandwidth of 2.9–13.4 GHz withS11<-10 dB. By inserting two arc-shaped slots in the radiation patch, two sharp bands of 3.3–3.7 GHz and 5.15–5.35 GHz are notched. The notch band of 7.25–7.75 GHz is achieved by etching a U-shaped slot in the ground plane. The notched bands can be controlled, respectively, while the characteristics of the proposed UWB antenna almost keep completely unchanged at the unnotched frequencies. Equivalent circuit models, surface current distributions, and input impedance are applied to analyze the principle of the proposed UWB antenna. Parametric studies are given. Simulated and measured results show that the proposed antenna has good impedance matching, stable radiation patterns, and constant gain.

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Satyanarayana, EVV, Vivek Kumar, D. Mallikarjun Reddy, T. Siva Paravathi, and J. Chandrasekhar Rao. "A compact disc loaded curved elliptical shaped ultra-wideband MIMO antenna." International Journal of Engineering & Technology 7, no. 2.7 (March 18, 2018): 597. http://dx.doi.org/10.14419/ijet.v7i2.7.10888.

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The ultra wide band (UWB) Multiple-Input- Multiple-Output (MIMO) antenna with coplanar waveguide (CPW) having size of 18 x 23 x 0.8mm3 is designed for ultra-wideband (UWB) applications. The designed MIMO antenna contains two symmetrical circular disc loaded curved elliptical monopoles on top of the substrate and common ground plane with Y slot and extended T-shaped stub on bottom of substrate. The T- shape stub is placed on the ground plane to have the better antenna impedance matching and to enhance the isolation between the two antenna ports. To further improve the isolation in between the ports 1 and 2, and also on the ground plane a Y-shaped slot is fixed. Good impedance matching (|S11| < -10dB) in the range from 2.8GHz to 12 GHz is provided by the proposed antenna, and an enhanced isolation of -27dB, low ECC of below 0.002, an acceptable gain of about 7 dBi and an efficiency of above 90%. The obtained result proves that the designed antenna is more appropriate for the portable devices.

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39

Jiang, Jun-Yi, and Hsin-Lung Su. "A Wideband Eight-Element MIMO Antenna Array in 5G NR n77/78/79 and WLAN-5GHz Bands for 5G Smartphone Applications." International Journal of Antennas and Propagation 2022 (November 16, 2022): 1–11. http://dx.doi.org/10.1155/2022/8456936.

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In this paper, a wideband eight-element multiple-input multiple-output (MIMO) antenna array for 5G smartphone applications is presented. Each antenna is composed of a dual-arm tortuous monopole radiating element with a double-stub tuner and an open slot on the ground plane. Tuning stub microstrip lines are utilized to improve impedance matching. The operating bandwidth of the single antenna element is from 3200 to 6000 MHz with three resonant frequencies. The operating bandwidth covers the 5G new radio (NR) bands (n77/n78/n79) and the WLAN-5GHz band. The isolation of the proposed MIMO antenna array is above 10 dB in the entire operating band without any isolation elements. Furthermore, the proposed MIMO array was manufactured and measured. The measured results validate that the MIMO antenna array has a wide 6-dB impedance bandwidth from 3.2 to 6 GHz and the isolations are all more than 10 dB. The total efficiency ranges from 38% to 83%. The above results show that this MIMO antenna array can support 5G applications in smartphones.

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40

Song, Ickhyun, Gyungtae Ryu, Seung Hwan Jung, John D. Cressler, and Moon-Kyu Cho. "Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking." Sensors 23, no. 15 (July 28, 2023): 6745. http://dx.doi.org/10.3390/s23156745.

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In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications. For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage–current (shunt–shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively. In addition, the cascode stage pushes the band-limiting low-frequency pole, due to the Miller capacitance, to a higher frequency. Lastly, the shunt-peaking approach is optimized for the compensation of a gain reduction at higher frequency bands. The wideband LNA proposed in this study is fabricated using a commercial 0.13 μm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit’s core active elements in the main branch. The measurement results show an operational bandwidth of 2.0–29.2 GHz, a noise figure of 4.16 dB (below 26.5 GHz, which was the measurement limit), and a total power consumption of 23.1 mW under a supply voltage of 3.3 V. Regarding the nonlinearity associated with large-signal behavior, the proposed LNA exhibits an input 1-dB compression (IP1dB) point of −5.42 dBm at 12 GHz. These performance numbers confirm the strong viability of the proposed approach in comparison with other state-of-the-art designs.

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Benyetho, Taoufik, Jamal Zbitou, Larbi El Abdellaoui, Hamid Bennis, and Abdelwahed Tribak. "A New Fractal Multiband Antenna for Wireless Power Transmission Applications." Active and Passive Electronic Components 2018 (2018): 1–10. http://dx.doi.org/10.1155/2018/2084747.

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The Microwave Power Transmission (MPT) is the possibility of feeding a system without contact by using microwave energy. The challenge of such system is to increase the efficiency of transmitted energy from the emitter to the load. This can be achieved by rectifying the microwave energy using a rectenna system composed of an antenna of a significant gain associated with a rectifier with a good input impedance matching. In this paper, a new multiband antenna using the microstrip technology and fractal geometry is developed. The fractal antenna is validated into simulation and measurement in the ISM (industrial, scientific, and medical) band at 2.45 GHz and 5.8 GHz and it presents a wide aperture angle with an acceptable gain for both bands. The final antenna is printed over an FR4 substrate with a dimension of 60 × 30 mm2. These characteristics make the antenna suitable for a multiband rectenna circuit use.

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42

Nguyen, Thuy-Linh, Yasuo Sato, and Koichiro Ishibashi. "A 2.77 μW Ambient RF Energy Harvesting Using DTMOS Cross-Coupled Rectifier on 65 nm SOTB and Wide Bandwidth System Design." Electronics 8, no. 10 (October 16, 2019): 1173. http://dx.doi.org/10.3390/electronics8101173.

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This paper proposes a structure of the μ W RF energy harvesting (RFEH) system that is used for scavenging RF power from an ambient environment. A cross-coupled rectifier (CCR) with floating sub-circuit structures was utilized in the application of dynamic threshold MOSFET (DTMOS) on Silicon on Thin Buried Oxide (SOTB) to obtain high drain conductance of the MOSFET. A wide bandwidth matching between antenna and rectifier was designed to receive energy from the orthogonal frequency division multiplexing (OFDM) RF signal with a bandwidth of 15 MHz at 950 MHz band. Realistic measurements with a 950 MHz LTE mobile phone signal from the ambient environment indicate that an average DC output power of 2.77 μ W is harvested with the proposed RFEH system at a level of −19.4 dBm input power. The proposed RFEH system exhibits the best performance when compared to that of other realistic RFEH systems and is a potential candidate for battery-less Internet of Things (IoT) applications.

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43

Yoon, Min, and Jee-Youl Ryu. "Development of Low-Noise Small-Area 24 GHz CMOS Radar Sensor." Journal of Sensors 2016 (2016): 1–12. http://dx.doi.org/10.1155/2016/8534198.

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We present a low-noise small-area 24 GHz CMOS radar sensor for automotive collision avoidance. This sensor is based on direct-conversion pulsed-radar architecture. The proposed circuit is implemented using TSMC 0.13 μm RF (radio frequency) CMOS (fT/fmax=120/140 GHz) technology, and it is powered by a 1.5 V supply. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF are used to reduce parasitic capacitance at the band of 24 GHz. The proposed sensor has low cost and low power dissipation since it is realized using CMOS process. The proposed sensor showed the lowest noise figure of 2.9 dB and the highest conversion gain of 40.2 dB as compared to recently reported research results. It also showed small chip size of 0.56 mm2, low power dissipation of 39.5 mW, and wide operating temperature range of −40 to +125°C.

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Fomin, Dmitriy G., Stanislav N. Darovskikh, Nikolay V. Dudarev, Igor I. Prokopov, and Svyatoslav V. Dudarev. "Simulation of band pass filters based on multilayer technology." Bulletin of the South Ural State University. Ser. Computer Technologies, Automatic Control & Radioelectronics 22, no. 1 (January 2022): 77–87. http://dx.doi.org/10.14529/ctcr220106.

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One of the integral parts of modern radio transmitting devices are bandpass filters that limit the out-of-band spectrum of electromagnetic radiation and the side effect of electromagnetic radiation, which is important in the framework of the dense distribution of the radio frequency band between radio services. Similar functions of bandpass filters are made as part of radio receivers and placed at the input. At the same time, they also perform the functions of a matching device between the radio receiving connection and the antenna-feeder path. Currently, there are known methods for the development of bandpass filters based on microstrip technology, which has such advantages as: a broad theoretical base, manufacturability, a wide selection of dielectric bases, and the possibility of simulation without using expensive software. At the same time, the disadvantage of microstrip technology is the need to expand the area of dielectric bases with an increase in the number of frequency-selective elements. Currently, a promising direction in the implementation of bandpass filters is their design based on a multilayer technology, which makes it possible to increase the number of frequency-selective elements without expanding the area of dielectric bases. Purpose of the study. The purpose of this article is to study the frequency-selective properties of design options for a bandpass filter based on multilayer technology, the basic element of which is a microstrip transition. Materials and methods. For the considered designs of the bandpass filter, a numerical electrodynamics simulation was carried out in the ANSYS HFSS software with an estimate of the dependence of the S-parameters in the frequency range of 0.2–4 GHz. The graphical distribution of the electromagnetic field in the microstrip transition was obtained. Results. From the results of the simulation it follows that the considered designs of the bandpass filter are characterized by good matching with a wave impedance of 50 Ohm (VSWR no more than 1.5 in a wide frequency range), low attenuation at the center frequency (no more than 0.5 dB), and by significant suppression of a signal outside its bandwidth (more than 30 dB). Conclusion. The simulation results prove the possibility of practical application of bandpass filters, developed on the basis of multilayer technology, as part of radio transmitting devices of radar and radio navigation systems.

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Qasim Hadi Kareem and Rana Ahmed Shihab. "Reconfigurable Compact Quad-port MIMO Antennas for sub-6 GHz Applications." Journal of AL-Farabi for Engineering Sciences 2, no. 1 (July 31, 2023): 10. http://dx.doi.org/10.59746/jfes.v2i1.58.

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This paper presents compact quad-port frequency reconfigurable multi-input multi-output (MIMO) antennas for 5 G applications that operate at sub-6 GHz. The proposed design provides more isolation (>13 dB) and pattern diversity using four orthogonal radiating elements. C-shaped metal is used to extend the antenna's radiating elements by inserting one positive intrinsic negative diode (PIN) in the metal. The C-shaped metal and matching stub achieve frequency reconfigurability with a consistent radiation pattern. The PIN diode's switching characteristics allow the frequency to be shifted between two communication bands. One mode (diode ON) covers 2.5 and 5 GHz, while the second mode (diode OFF) covers another dual band of 3.5 and 5.7 GHz. Substrate dimensions are only 50 x 50 x1.6 mm3, making the proposed design compact. Antenna peaks at a gain of 4.18 dB and radiation efficiencies of 80 and 94% in the four frequency bands. The antenna design is appropriate for multi-functional wireless systems and cognitive radio applications since it spans frequency bands below 6 GHz and can be reconfigurable between wide and narrow bands.

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Jalali, Mahdi, Mohammad Naser-Moghadasi, and Ramezan Ali Sadeghzadeh. "Dual circularly polarized multilayer MIMO antenna array with an enhanced SR-feeding network for C-band application." International Journal of Microwave and Wireless Technologies 9, no. 8 (May 3, 2017): 1741–48. http://dx.doi.org/10.1017/s1759078717000435.

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Wide-band circularly polarized multi-input multi-output (MIMO) antenna array with a 2 × 4 feed network was proposed for C-band application. Different unique techniques were utilized in the proposed array to enhance the antenna characteristics, such as gain, 3 dB axial ratio bandwidth (ARBW), impedance tuning, and ruinous mutual coupling effects. A miniaturized dual-feed Tai chi-shaped antenna element with a pair of feeding points and a pair of eyebrow-shaped strips was presented for enhancing circular polarization (CP) purity and impedance matching. For a better improvement of CP features, a 2*4 MIMO sequentially rotated (MIMO-SR) feed network was used to achieve broader 3 dB ARBW. Besides, the MIMO feature of the feed network could control the left- and right-handed CP, respectively. Ultimately, specific forms of slot and slit structures were applied onto the top layer of MIMO feed network that provided a high isolation between the radiating elements and array network. Furthermore, the diversity gain (DG) was studied. The extracted measured results illustrated an impedance bandwidth of 3.5–8.2 GHz at port 1 and 3.5–8.3 GHz at port 2 for VWSR < 2 and 3 dB ARBW of 4.6–7.6 GHz at port 1 and 4.6–7.5 GHz at port 2. The peak gain of 9.9 dBi was at 6 GHz.

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47

Jeong, Jinho, Yeongmin Jang, Jongyoun Kim, Sosu Kim, and Wansik Kim. "Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines." Applied Sciences 11, no. 19 (September 28, 2021): 9017. http://dx.doi.org/10.3390/app11199017.

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In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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Roy, Sunanda, Jun Jiat Tiang, Mardeni Bin Roslee, Md Tanvir Ahmed, Abbas Z. Kouzani, and M. A. Parvez Mahmud. "Quad-Band Rectenna for Ambient Radio Frequency (RF) Energy Harvesting." Sensors 21, no. 23 (November 25, 2021): 7838. http://dx.doi.org/10.3390/s21237838.

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RF power is broadly available in both urban and semi-urban areas and thus exhibits as a promising candidate for ambient energy scavenging sources. In this research, a high-efficiency quad-band rectenna is designed for ambient RF wireless energy scavenging over the frequency range from 0.8 to 2.5 GHz. Firstly, the detailed characteristics (i.e., available frequency bands and associated power density levels) of the ambient RF power are studied and analyzed. The data (i.e., RF survey results) are then applied to aid the design of a new quad-band RF harvester. A newly designed impedance matching network (IMN) with an additional L-network in a third-branch of dual-port rectifier circuit is familiarized to increase the performance and RF-to-DC conversion efficiency of the harvester with comparatively very low input RF power density levels. A dual-polarized multi-frequency bow-tie antenna is designed, which has a wide bandwidth (BW) and is miniature in size. The dual cross planer structure internal triangular shape and co-axial feeding are used to decrease the size and enhance the antenna performance. Consequently, the suggested RF harvester is designed to cover all available frequency bands, including part of most mobile phone and wireless local area network (WLAN) bands in Malaysia, while the optimum resistance value for maximum dc rectification efficiency (up to 48%) is from 1 to 10 kΩ. The measurement result in the ambient environment (i.e., both indoor and outdoor) depicts that the new harvester is able to harvest dc voltage of 124.3 and 191.0 mV, respectively, which can be used for low power sensors and wireless applications.

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Palanisamy, Satheeshkumar, Balakumaran Thangaraju, Osamah Ibrahim Khalaf, Youseef Alotaibi, Saleh Alghamdi, and Fawaz Alassery. "A Novel Approach of Design and Analysis of a Hexagonal Fractal Antenna Array (HFAA) for Next-Generation Wireless Communication." Energies 14, no. 19 (September 28, 2021): 6204. http://dx.doi.org/10.3390/en14196204.

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The study and exploration of massive multiple-input multiple-output (MMIMO) and millimeter-wave wireless access technology has been spurred by a shortage of bandwidth in the wireless communication sector. Massive MIMO, which combines antennas at the transmitter and receiver, is a key enabler technology for next-generation networks to enable exceptional spectrum and energy efficiency with simple processing techniques. For massive MIMOs, the lower band microwave or millimeter-wave band and the antenna are impeccably combined with RF transceivers. As a result, the 5G wireless communication antenna differs from traditional antennas in many ways. A new concept of the MIMO tri-band hexagonal antenna array is being introduced for next-generation cellular networks. With a total scaling dimension of 150 × 75 mm2, the structure consists of multiple hexagonal fractal antenna components at different corners of the patch. The radiating patch resonates at 2.55–2.75, 3.45–3.7, and 5.65–6.05 GHz (FR1 band) for better return loss (S11) of more than 15 dB in all three operating bands. The coplanar waveguide (CPW) feeding technique and defective ground structure in the ground plane have been employed for effective impedance matching. The deviation of the main lobe of the radiation pattern is achieved using a two-element microstrip Taylor antenna array with series feeding, which also boosts the antenna array’s bandwidth and minimizes sidelobe. The proposed antenna is designed, simulated, and tested in far-field radiating conditions and generates tri-band S-parameters with sufficient separation and high-quality double-polarized radiation. The fabrication and testing of MIMO antennas were completed, where the measurement results matched the simulation results. In addition, the 5G smartphone antenna system requires a new, lightweight phased microwave antenna (μ-wave) with wide bandwidth and a fire extender. Because of its decent performance and compact architectures, the proposed smartphone antenna array architecture is a better entrant for upcoming 5G cellular implementations.

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Danani, S., Sheetal Punia, Ravinder Kumar, Hitesh Kumar B. Pandya, and Vinay Kumar. "Design of Stray Radiation Sensor for ITER ECE Diagnostic." EPJ Web of Conferences 277 (2023): 03010. http://dx.doi.org/10.1051/epjconf/202327703010.

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The Electron Cyclotron Emission (ECE) diagnostic has a primary role in the measurement of electron temperature profile and electron temperature fluctuations in ITER. This diagnostic shall be exposed to significant power due to unabsorbed Electron Cyclotron Heating (ECH) power in the plasma. The expected stray power loads could be a few tens of watts, and therefore, the protection of millimetre wave components is one of the design challenges of ITER ECE diagnostic. This protection system includes sensors, a band stop notch filter, and a shutter to stop the RF stray radiation from being incident on the sensitive components. The sensors will be positioned along the ECE transmission line, and shall be used for real-time power monitoring of the stray radiation. Here, we describe a novel design of a sensor for monitoring the stray radiation power. This sensor is a Schottky Diode rectenna, known for high-power and high-speed millimetre wave detection capability. It consists of a 2x2 microstrip patch antenna array, a matching circuit, a diode, and a low pass filter. The antenna array is designed analytically and optimized in CST Microwave Studio, for wide reception angle, high gain, and low side lobe levels. Furthermore, the rectifying circuit is optimized using Agilent Advanced Design System (ADS) software to get better rectification and impedance matching of the signal, thereby improving its detection sensitivity. The ADS simulation results show that the detection sensitivity is about 1000V/W for input power of -30 dBm at 170 GHz, thereby achieving the required performance of the sensor.

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Journal articles on the topic 'Wide-band Input Matching'

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