Relevant bibliographies by topics / W-band Coplanar Waveguide Power Amplifier

Academic literature on the topic 'W-band Coplanar Waveguide Power Amplifier'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'W-band Coplanar Waveguide Power Amplifier.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "W-band Coplanar Waveguide Power Amplifier"

1

Lee, Jong-Wook, and Sang-Moo Heo. "A Ka-band CMOS power amplifier using new substrate-shielded coplanar waveguide." Microwave and Optical Technology Letters 50, no. 11 (November 2008): 2815–17. http://dx.doi.org/10.1002/mop.23827.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

SCHLECHTWEG, M. "HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 393–411. http://dx.doi.org/10.1142/s0129156400000404.

Full text
Abstract:
For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.
APA, Harvard, Vancouver, ISO, and other styles
3

Amin, Najam Muhammad, Lianfeng Shen, Zhi-Gong Wang, Muhammad Ovais Akhter, and Muhammad Tariq Afridi. "60 GHz-Band Low-Noise Amplifier." Journal of Circuits, Systems and Computers 26, no. 05 (February 8, 2017): 1750075. http://dx.doi.org/10.1142/s021812661750075x.

Full text
Abstract:
This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.
APA, Harvard, Vancouver, ISO, and other styles
4

Akinin, V. E., O. V. Borisov, K. A. Ivanov, Yu V. Kolkovskiy, V. M. Minnebaev, and Al V. Redka. "AIR-COOLED 350 W X-BAND SOLID-STATE POWER AMPLIFIER." Electronic engineering Series 2 Semiconductor devices 258, no. 3 (2020): 43–52. http://dx.doi.org/10.36845/2073-8250-2020-258-3-43-52.

Full text
Abstract:
In this paper we present the results of the design and production of an air-cooled X-band solid-state power amplifier based on AlGaN/GaN/SiC Schottky FET. The power amplifier includes: preliminary power amplifier, output power amplifiers, set of secondary power supplies, digital control unit, monitoring system for the power amplifier performance, set of microwave power waveguide combiners.
APA, Harvard, Vancouver, ISO, and other styles
5

Rymanov, V., M. Palandöken, S. Dülme, T. Tekin, and A. Stöhr. "Compact Photonic Package for High-Power E-Band (60–90 GHz) Photoreceiver Modules." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000883–86. http://dx.doi.org/10.4071/isom-2013-thp43.

Full text
Abstract:
In this work, we present a novel photonic package for high-power photoreceiver modules operating within the E-band (60–90 GHz). The developed Kovar package features a compact size of only 6×3.5×2 cm3 and comprises an optical single-mode fiber (SMF) input, DC bias supply connections and a WR-12 output for coupling out of the radio frequency (RF) signal. As integration platform, a RF laminate submount with implemented planar bias-T based upon grounded coplanar waveguide (GCPW) transmission line circuitry is used for efficient mmW propagation, concluding in a GCPW-to-WR-12-transition. Finite element method (FEM) simulations have been carried out to analyze the frequency range of interest. Besides applied adhesive and wire bonding approaches for assembly inside the package, the RF submount exhibits sections for hybrid integration of single components, e.g. of a high-frequency waveguide photodiode. Optionally, up to two high-electron-mobility-transistor (HEMT) power amplifiers can be integrated within the GCPW circuitry. In addition, the RF laminate is mounted on a brass platform. For uniform thermal expansion within the module, a Peltier element is integrated. Concerning the saturation output power of given HEMT amplifiers, e.g. in the order of +17.5 dBm, corresponding power levels are achievable for packaged devices. For instance, an output RF power of only −19.5 dBm within the 71–76 GHz band is required from the photodiode in conjunction with two cascaded HEMT amplifiers, which results in a total gain of ~37 dB. A small series of the introduced device has been already fabricated. First experimental achievements with in-house fabricated modules will be presented.
APA, Harvard, Vancouver, ISO, and other styles
6

Bessemoulin, A., H. Massler, A. Hulsmann, and M. Schlechtweg. "Ka-band high-power and driver MMIC amplifiers using GaAs PHEMTs and coplanar waveguides." IEEE Microwave and Guided Wave Letters 10, no. 12 (2000): 534–36. http://dx.doi.org/10.1109/75.895094.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Schwantuschke, Dirk, Christian Haupt, Rudolf Kiefer, Peter Brückner, Matthias Seelmann-Eggebert, Axel Tessmann, Michael Mikulla, Ingmar Kallfass, and Rüdiger Quay. "A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs." International Journal of Microwave and Wireless Technologies 4, no. 3 (March 14, 2012): 267–74. http://dx.doi.org/10.1017/s1759078712000177.

Full text
Abstract:
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
APA, Harvard, Vancouver, ISO, and other styles
8

He, Yue, Xian Jin Deng, Cheng Wang, and Bin Lu. "W-Band Quadrupler Based on Multi-Chip Module and Schottky Barrier Diodes." Key Engineering Materials 645-646 (May 2015): 80–85. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.80.

Full text
Abstract:
This paper reports a W-band solid-state quadrupler based on multi-chip module and nonlinear schottky barrier diodes. The quadruple consists of Q-band doubler and amplifier, branched-guide coupler and two parallel W-band doublers that are power-combined in-phase using T-juntion at output waveguide, and each W-band doubler channel includes two schottky barrier diodes featuring two anodes on a 127um-thick quartz substrate. The power-combined strategy decreases the size of W-band quadrupler to 56mm×33mm×20mm and increases the maximum stable output power by twice with regard to the traditional W-band doubler. The measured output power of the quadrupler is greater than 20mW over the 80 to 90 GHz and 40mW within 80.6 to 86.6 GHz with above 12% 3dB bandwidth when driven with 2mW input power at 300K. The spectrum of output signal is tested and analyzed to obtain the purity and noise performance of signal.
APA, Harvard, Vancouver, ISO, and other styles
9

Shin, Im-Hyu, Choul-Young Kim, Man-Hee Lee, Ji-Han Joo, Sang-Joo Lee, and Dong-Wook Kim. "A Ka-Band 8 W Power Amplifier Module Using 4-Way Waveguide Power Combiners with High Isolation." Journal of Korean Institute of Electromagnetic Engineering and Science 23, no. 2 (February 29, 2012): 262–65. http://dx.doi.org/10.5515/kjkiees.2012.23.2.262.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Song, Kaijun, Fan Zhang, Shunyong Hu, and Yong Fan. "Ku-band 200-W Pulsed Power Amplifier Based on Waveguide Spatially Power-Combining Technique for Industrial Applications." IEEE Transactions on Industrial Electronics 61, no. 8 (August 2014): 4274–80. http://dx.doi.org/10.1109/tie.2013.2284137.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "W-band Coplanar Waveguide Power Amplifier"

1

Jian, Lian, and 簡練. "Coplanar Waveguide Ka-Band Low Noise and Power Amplifier." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/42144569586141553843.

Full text
Abstract:
碩士
國立交通大學
電信工程系
89
This thesis presents the design and fabrication of Ka-band low noise and power amplifiers. HMIC (Hybrid Microwave Integrated Circuits) and CPW (Coplanar Waveguide) structures are used in this design. The amplifiers are matched with series open stub and shunt short stub. Working frequency is 28GHz and suitable for LMDS application. The method of designing LNA and PA is explained in this thesis. Noise figure and output power are designed optimally. Noise figure of the LNA is 1.5dB and gain of 27dB . Output power of the PA is achieved 22.4dBm with 20% PAE.
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "W-band Coplanar Waveguide Power Amplifier"

1

Mahon, Simon J., Daniel Sjoberg, Jonas Hansryd, and Michael C. Heimlich. "W-Band Coplanar Medium Power Amplifier." In 2021 IEEE Asia-Pacific Microwave Conference (APMC). IEEE, 2021. http://dx.doi.org/10.1109/apmc52720.2021.9661866.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Tessmann, A., W. H. Haydl, M. Neumann, S. Kudszus, and A. Hulsmann. "A Coplanar W-Band Power Amplifier MMIC Using Dual-Gate HEMTs." In 1999 29th European Microwave Conference. IEEE, 1999. http://dx.doi.org/10.1109/euma.1999.338319.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Bessemoulin, Alex, Jabra Tarazi, MacCrae G. McCulloch, and Simon J. Mahon. "0.1-µm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology." In 2014 1st Australian Microwave Symposium (AMS). IEEE, 2014. http://dx.doi.org/10.1109/ausms.2014.7017336.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Zhang, Li, Jun Yao, Dajia Wa, Qing Rao, Hongsheng Zhong, and Jurgen Schmoll. "High Isolation X-Band RF MEMS Shunt Switches on Groove Etched Substrates." In 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2008. http://dx.doi.org/10.1115/micronano2008-70107.

Full text
Abstract:
Developments in RF MEMS switches have demonstrated great potential at low-loss microwave application. MEMS shunt switches have a few advantages compared to the FET or p-i-n diode counterparts due to their characteristics of low intermodulation distortion or harmonics, low DC power consumption, low insertion losses and high isolation [1][2]. RF MEMS shunt capacitive switches has shown excellent performance from Ka-band to W-band, however, they fail to perform the same in X-band for the low isolation in this frequency range. Various approaches have been introduced to address this shortcoming, such as applying high-impedance transmission line [3], using strontium titanate oxide (SrTiO3) as high relative dielectric constant material [2], etc. Aimed at X-band applications, this paper reports a novel design of a high isolation RF MEMS shunt capacitive switch which is fabricated on a groove etched substrate. Fig. 1(a) and Fig. 2(a) show the schematics of the MEMS capacitive switch. The switch is constructed on a coplanar waveguide (CPW) transmission line. When the switch is up, the switch presents a small shunt capacitance to ground, presenting an RF open. When the switch is pulled down to the center conductor by electrostatic force, the shunt capacitance increases remarkably, presenting an RF short. In this work, a short high-impedance section of transmission line is designed between the MEMS bridge and the ground plane. This increases the series inductance of the switch so as to lower the resonant frequency. The length of this line is designed to put the series resonant frequency into the frequency range of X-band. Two grooves are etched into the substrate along the center conductor between the transmission line and the ground plane. For the desired characteristic impedance, a wider center conductor width can be obtained by increasing the groove depth accordingly. Thus the CPW with grooves potentially has a lower attenuation due to conductor losses [4]. Moreover, as center conductor gets wider, the down-state shorting-circuit capacitance increases which helps to gain a higher isolation. The mechanical and RF performances of this switch have been analyzed by FEA software, IntelliSuite and HFSS. As shown in Fig. 1(b), the actuation voltage of the planar switches is 26V. The RF characteristics of the switch at down state are obtained through HFSS. In Fig. 1(c), the down state isolation reaches −54.6dB at its self-resonate frequency of 13.5GHz. Compared with the non-grooves counterpart, the designed grooves optimize the isolation performance by 7dB. The insertion loss is less than 0.2 dB from 5 to 30 GHz. Fig. 2(a) shows the serpentine folded suspension switch, its actuation voltage is 14V, shown as in Fig. 2(b). The RF response in Fig. 2(c) demonstrates that the series resonant frequency is down to 11GHz due to the inductance introduced by serpentine folded suspensions. The down state isolation is −42.8dB at 11GHz. However, it is demonstrated that the substrate grooves did not help to optimize isolation performance. This is due to the higher resistance and inductance introduced by serpentine folded suspension. This research is supported by “Hundreds Scholar Program”, Chinese Academy of Sciences.
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'W-band Coplanar Waveguide Power Amplifier' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography