Journal articles on the topic 'Vth instability'
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Senzaki, Junji, Atsushi Shimozato, Kazutoshi Kojima, Shinsuke Harada, Keiko Ariyoshi, Takahito Kojima, Yasunori Tanaka, and Hajime Okumura. "Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces." Materials Science Forum 778-780 (February 2014): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.521.
Tadjer, Marko J., Karl D. Hobart, Eugene A. Imhoff, and Fritz J. Kub. "Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices." Materials Science Forum 600-603 (September 2008): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1147.
Sometani, Mitsuru, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, and Hajime Okumura. "Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method." Materials Science Forum 821-823 (June 2015): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.685.
Na, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, et al. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors." Nanomaterials 14, no. 5 (March 4, 2024): 466. http://dx.doi.org/10.3390/nano14050466.
Kutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Masatoshi Tsujimura, Toru Onishi, Hirokazu Fujiwara, Kensaku Yamamoto, and Takashi Kanemura. "Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs." Materials Science Forum 858 (May 2016): 607–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.607.
Senzaki, Junji, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi, and Hajime Okumura. "Electrical Properties of MOS Structures on 4H-SiC (11-20) Face." Materials Science Forum 740-742 (January 2013): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.621.
Kim, Sang Sub, Pyung Ho Choi, Do Hyun Baek, Jae Hyeong Lee, and Byoung Deog Choi. "Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7555–58. http://dx.doi.org/10.1166/jnn.2015.11167.
Okamoto, Mitsuo, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano, and Hajime Okumura. "Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET." Materials Science Forum 897 (May 2017): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.897.549.
Deb, Arkadeep, Jose Ortiz-Gonzalez, Mohamed Taha, Saeed Jahdi, Phillip Mawby, and Olayiwola Alatise. "Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs." Materials Science Forum 1091 (June 5, 2023): 61–66. http://dx.doi.org/10.4028/p-lidhbt.
Rescher, Gerald, Gregor Pobegen, and Thomas Aichinger. "Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs." Materials Science Forum 821-823 (June 2015): 709–12. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.709.
Li, Shanjie, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, and Guoqiang Li. "Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress." Applied Physics Letters 121, no. 6 (August 8, 2022): 062101. http://dx.doi.org/10.1063/5.0094957.
Koo, Sang-Mo, and Tae-Jun Ha. "Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7800–7803. http://dx.doi.org/10.1166/jnn.2015.11193.
Li, Xiangdong, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, et al. "Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization." Micromachines 14, no. 5 (May 12, 2023): 1042. http://dx.doi.org/10.3390/mi14051042.
Wu, Ruizhu, Simon Mendy, Nereus Agbo, Jose Ortiz Gonzalez, Saeed Jahdi, and Olayiwola Alatise. "Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions." Energies 14, no. 20 (October 19, 2021): 6834. http://dx.doi.org/10.3390/en14206834.
Asllani, Besar, Alberto Castellazzi, Dominique Planson, and Hervé Morel. "Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs." Materials Science Forum 963 (July 2019): 184–88. http://dx.doi.org/10.4028/www.scientific.net/msf.963.184.
Grossl Bade, Tamiris, Hassan Hamad, Adrien Lambert, Hervé Morel, and Dominique Planson. "Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs." Electronics 12, no. 11 (June 3, 2023): 2529. http://dx.doi.org/10.3390/electronics12112529.
Liu, Han-Wen, Tzu-Cheng Hung, and Bo-Xiang Huang. "(Digital Presentation) Instability of α-Si:H TFTs under Simultaneous Ultraviolet Light Illumination and Different Bias Stresses." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1262. http://dx.doi.org/10.1149/ma2022-02351262mtgabs.
Rescher, Gerald, Gregor Pobegen, and Tibor Grasser. "Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress." Materials Science Forum 858 (May 2016): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.858.481.
Go, Donghyun, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, and Jeong-Soo Lee. "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory." Micromachines 14, no. 11 (October 28, 2023): 2007. http://dx.doi.org/10.3390/mi14112007.
Lee, Sangmin, Pyungho Choi, Minjun Song, Gaeun Lee, Nara Lee, Bohyeon Jeon, and Byoungdeog Choi. "Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress." Journal of Nanoscience and Nanotechnology 21, no. 8 (August 1, 2021): 4277–84. http://dx.doi.org/10.1166/jnn.2021.19392.
Elangovan, Surya, Stone Cheng, and Edward Yi Chang. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications." Energies 13, no. 10 (May 21, 2020): 2628. http://dx.doi.org/10.3390/en13102628.
Lim, Sang Chul, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim, and Tae Hyoung Zyung. "Instability of OTFT with Organic Gate Dielectrics." Solid State Phenomena 124-126 (June 2007): 407–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.407.
LEE, YONG K. "CONTROLLING INSTABILITIES OF HYDROGENERATED a-Si:H TFT UNDER BIAS TEMPERATURE STRESSING." Modern Physics Letters B 22, no. 04 (February 10, 2008): 263–68. http://dx.doi.org/10.1142/s0217984908014730.
Lee, Seung-Hun, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo-Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang, and Jeong Hwan Kim. "Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications." Materials 12, no. 1 (January 3, 2019): 137. http://dx.doi.org/10.3390/ma12010137.
Park, Jee Ho, Sohyung Lee, Hee Sung Lee, Sung Ki Kim, Kwon-Shik Park, and Soo-Young Yoon. "Correlation between spin density and Vth instability of IGZO thin-film transistors." Current Applied Physics 18, no. 11 (November 2018): 1447–50. http://dx.doi.org/10.1016/j.cap.2018.08.016.
Gonzalez, Jose Ortiz, Olayiwola Alatise, and Philip A. Mawby. "Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs." Materials Science Forum 963 (July 2019): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.963.749.
Wang, Kai Yu, Cai Ping Wan, Wen Hao Lu, Nian Nian Ge, and Heng Yu Xu. "Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors." Key Engineering Materials 950 (July 31, 2023): 133–38. http://dx.doi.org/10.4028/p-fagd0d.
Elangovan, Surya, Edward Yi Chang, and Stone Cheng. "Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress." Energies 14, no. 8 (April 13, 2021): 2170. http://dx.doi.org/10.3390/en14082170.
Murakami, Eiichi, Takahiro Furuichi, Tatsuya Takeshita, and Kazuhiro Oda. "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V." Materials Science Forum 924 (June 2018): 711–14. http://dx.doi.org/10.4028/www.scientific.net/msf.924.711.
Idris, Muhammad I., Ming Hung Weng, H. K. Chan, A. E. Murphy, Dave A. Smith, R. A. R. Young, Ewan P. Ramsay, David T. Clark, Nick G. Wright, and Alton B. Horsfall. "Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors." Materials Science Forum 897 (May 2017): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.897.513.
Li, Jiye, Yuqing Zhang, Hao Peng, Huan Yang, Lei Lu, and Shengdong Zhang. "9.2: Mechanism of H2O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs." SID Symposium Digest of Technical Papers 54, S1 (April 2023): 94–97. http://dx.doi.org/10.1002/sdtp.16230.
Huang, Sen, Shu Yang, John Roberts, and Kevin J. Chen. "Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement." physica status solidi (c) 9, no. 3-4 (February 29, 2012): 923–26. http://dx.doi.org/10.1002/pssc.201100302.
Neema, Vaibhav, Kuldeep Raguwanshi, Ambika Prasad Shah, and Santosh Kumar Vishvakarma. "Vth Extraction Based Run Time Transistor Width (TWOS) Module for On-Chip Negative Bias Temperature Instability (NBTI) Mitigation." Sensor Letters 17, no. 5 (May 1, 2019): 385–92. http://dx.doi.org/10.1166/sl.2019.4103.
Cho, Sanghyun, Seohan Kim, Doyeong Kim, Moonsuk Yi, Junseok Byun, and Pungkeun Song. "Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors." Coatings 9, no. 1 (January 15, 2019): 44. http://dx.doi.org/10.3390/coatings9010044.
Florentin, Matthieu, Mihaela Alexandru, Aurore Constant, Bernd Schmidt, and Philippe Godignon. "10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters." Materials Science Forum 806 (October 2014): 121–25. http://dx.doi.org/10.4028/www.scientific.net/msf.806.121.
Bai, Zhi Qiang, Xiao Yan Tang, Chao Han, Yan Jing He, Qing Wen Song, Yi Fan Jia, Yi Men Zhang, and Yu Ming Zhang. "The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET." Materials Science Forum 954 (May 2019): 144–50. http://dx.doi.org/10.4028/www.scientific.net/msf.954.144.
Wang, Dapeng, Mamoru Furuta, Shigekazu Tomai, and Koki Yano. "Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors." Nanomaterials 10, no. 9 (September 9, 2020): 1782. http://dx.doi.org/10.3390/nano10091782.
Jung, Seyeon, Taehoon Sung, Sein Lee, and J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Lee, Geon Hee, Jang Kwon Lim, Sang Mo Koo, and Mietek Bakowski. "Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD." Materials Science Forum 1091 (June 5, 2023): 55–59. http://dx.doi.org/10.4028/p-nnor4r.
Ruderman, M. S., E. Verwichte, R. Erdélyi, and M. Goossens. "Dissipative instability of the MHD tangential discontinuity in magnetized plasmas with anisotropic viscosity and thermal conductivity." Journal of Plasma Physics 56, no. 2 (October 1996): 285–306. http://dx.doi.org/10.1017/s0022377800019279.
Slobounov, Semyon, Cheng Cao, Niharika Jaiswal, and Karl M. Newell. "Neural basis of postural instability identified by VTC and EEG." Experimental Brain Research 199, no. 1 (August 5, 2009): 1–16. http://dx.doi.org/10.1007/s00221-009-1956-5.
Franck Severin Ando, Amalaman. "Milieu Institutionnel, Sexe Et Stabilité Émotionnelle/Névrosisme Chez Des Orphelins Et Enfants Vulnérables Du Fait Du VIH À Abidjan." European Scientific Journal, ESJ 18, no. 14 (April 30, 2022): 116. http://dx.doi.org/10.19044/esj.2022.v18n14p116.
Ali, Amjad, Ahmad Naveed, Tahir Rasheed, Tariq Aziz, Muhammad Imran, Ze-Kun Zhang, Muhammad Wajid Ullah, et al. "Methods for Predicting Ethylene/Cyclic Olefin Copolymerization Rates Promoted by Single-Site Metallocene: Kinetics Is the Key." Polymers 14, no. 3 (January 24, 2022): 459. http://dx.doi.org/10.3390/polym14030459.
Aktershev, Yuriy, Sergey Vasichev, and Vladimir Veremeenko. "Precision Four-Quadrant Current Source Vch-500-12r For Superconducting Solenoids." Siberian Journal of Physics 12, no. 2 (June 1, 2017): 138–41. http://dx.doi.org/10.54362/1818-7919-2017-12-2-138-141.
Nandi, Abhijit, Manisha, Vandana Solanki, Vishvanath Tiwari, Basavaraj Sajjanar, Muthu Sankar, Mohini Saini, Sameer Shrivastava, S. K. Bhure, and Srikant Ghosh. "Protective Efficacy of Multiple Epitope-Based Vaccine against Hyalomma anatolicum, Vector of Theileria annulata and Crimean–Congo Hemorrhagic Fever Virus." Vaccines 11, no. 4 (April 21, 2023): 881. http://dx.doi.org/10.3390/vaccines11040881.
Renz, Arne Benjamin Benjamin, Oliver J. Vavasour, Peter Michael Gammon, Fan Li, Tianxiang Dai, Guy W. C. Baker, Nicholas E. Grant, et al. "(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1065. http://dx.doi.org/10.1149/ma2022-01191065mtgabs.
Ortel, Thomas L., Karen D. Moore, Mirella Ezban, and William H. Kane. "Effect of Heterologous Factor V Heavy Chain Sequences on the Secretion of Recombinant Human Factor VIII." Thrombosis and Haemostasis 75, no. 01 (1996): 036–44. http://dx.doi.org/10.1055/s-0038-1650218.
Singh, N. "Space-time evolution of electron-beam driven electron holes and their effects on the plasma." Nonlinear Processes in Geophysics 10, no. 1/2 (April 30, 2003): 53–63. http://dx.doi.org/10.5194/npg-10-53-2003.
Besnier, Niko. "Les politiques identitaires entre le local et le global : la mobilisation transgenre aux îles Tonga (Pacifique sud)." Ethnologie française Vol. 54, no. 1 (February 26, 2024): 117–33. http://dx.doi.org/10.3917/ethn.241.0117.
Vargas, Carlos Alberto, and Hector Andres Tinoco. "Electrical Performance of a Piezo-inductive Device for Energy Harvesting with Low-Frequency Vibrations." Actuators 8, no. 3 (July 16, 2019): 55. http://dx.doi.org/10.3390/act8030055.