Relevant bibliographies by topics / Varactors

Academic literature on the topic 'Varactors'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Varactors"

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Agrawal, Prannoy, Daniel Kienemund, Dominik Walk, Stipo Matic, Nicole Bohn, Kevin Häuser, Thomas Fink, et al. "Suppression of Acoustic Resonances in BST-Based Bulk-Ceramic Varactors by Addition of Magnesium Borate." Crystals 11, no. 7 (July 6, 2021): 786. http://dx.doi.org/10.3390/cryst11070786.

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This work presents a method for reducing acoustic resonances in ferroelectric barium strontium titanate (BST)-based bulk ceramic varactors, which are capable of operation in high-power matching circuits. Two versions of parallel-plate varactors are manufactured here: one with pure BST and one with 10 vol-% magnesium borate, Mg3B2O6 (MBO). Each varactor includes a 0.85-mm-thick ferroelectric layer. Acoustic resonances that are present in the pure BST varactor are strongly suppressed in the BST-MBO varactor and, hence, the Q-factor is increased over a wide frequency range by the addition of small amounts of a low-dielectric-constant (LDK) MBO. Although the tunability is reduced due to the presence of non-tunable MBO, the increased Q-factor extends the varactor’s availability for low-loss and high-power applications.
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Lee, Milim, Jaeyong Lee, and Changkun Park. "Layout of MOS Varactor with Improved Quality Factor for Cross-Coupled Differential Voltage-Controlled Oscillator Applications." Electronics 12, no. 6 (March 14, 2023): 1385. http://dx.doi.org/10.3390/electronics12061385.

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In this study, we designed an MOS varactor for application in the differential voltage-controlled oscillator (VCO). To improve the quality factor of the MOS varactor, we proposed a symmetric layout technique of the MOS varactor with reduced parasitic components. Compared with the typical MOS varactor layout, the metal line for the interconnection of the MOS varactors that is inevitable in the typical MOS varactors for the cross-coupled VCO was minimized to reduce the parasitic resistance. In addition, with the reduced interconnection metal line, the overall size of the proposed MOS varactor was also reduced compared with the typical one. To verify the feasibility of the proposed MOS varactor structure, the typical and proposed MOS varactors were designed using a 180 nm RFCMOS process. Compared to the typical MOS varactor, the measured quality factor of the proposed MOS varactor was improved by approximately 32% at the operating frequency of 5.0 GHz. Additionally, we successfully verified that the parasitic capacitance induced by the lossy silicon substrate was reduced in the proposed MOS varactor structure.
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Li, Ming, Rony E. Amaya, Robert G. Harrison, and N. Garry Tarr. "Investigation of CMOS Varactors for High-GHz-Range Applications." Research Letters in Electronics 2009 (2009): 1–4. http://dx.doi.org/10.1155/2009/535809.

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This paper explores a variety of different CMOS varactor structures for RF and MMICs. A typical 0.18 μm CMOS foundry process was used as the study platform. The varactors' capacitance-voltage characteristics and cutoff frequencies have been examined up to 55 GHz. The primary aim of this work is to design varactors that can improve nonlinear-transmission-line (NLTL) pulse-compression circuits. The results should also be valuable for other applications up to millimeter wavelengths.
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Hsieh, Yu-Li, Liann-Be Chang, Ming-Jer Jeng, Chung-Yi Li, Chien-Fu Shih, Hung-Tsung Wang, Zi-Xin Ding, Chia-Ning Chang, Hao-Zong Lo, and Yuan-Po Chiang. "Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors." Materials 13, no. 21 (November 4, 2020): 4956. http://dx.doi.org/10.3390/ma13214956.

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Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.
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Song, Jing-Pan, Xin-Yi Wang, Feng Wei, and Xiao-Wei Shi. "Electronically Reconfigurable Varactor-Loaded HMSIW Bandpass Filter." Frequenz 72, no. 5-6 (April 25, 2018): 227–30. http://dx.doi.org/10.1515/freq-2016-0345.

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AbstractA varactor-loaded half-mode substrate integrated waveguide (HMSIW) reconfigurable bandpass filter (BPF) is proposed in this paper. The proposed BPF is composed of complementary split-ring resonators (CSRRs) and varactors. Meanwhile, a nonmetalized via is employed in the center of the CSRR. It is noted that the varactor is embedded into the nonmetalized via, which can significantly reduce the tunable filter size. By changing the reverse bias voltage of the varactor, the resonant frequency of the proposed filter can be adjusted. Moreover, low insert loss (IL) and wide tuning range can be achieved. In order to validate its practicability, a BPF with the frequency ranging from 1.9 GHz to 2.5 GHz is fabricated and good agreement between the simulated and measured results is observed.
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Abdulazhanov, Sukhrob, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, and Gerald Gerlach. "RF-Characterization of HZO Thin Film Varactors." Crystals 11, no. 8 (August 18, 2021): 980. http://dx.doi.org/10.3390/cryst11080980.

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A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
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Kienemund, Daniel, Nicole Bohn, Thomas Fink, Mike Abrecht, Walter Bigler, Joachim R. Binder, Rolf Jakoby, and Holger Maune. "Design and demonstration of acoustically optimized, fully-printed, BST MIM varactors for high power matching circuits." International Journal of Microwave and Wireless Technologies 10, no. 5-6 (April 17, 2018): 620–26. http://dx.doi.org/10.1017/s1759078718000387.

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AbstractThis work addresses the piezoelectric induced reduction of quality factor in fully-printed metal-insulator-metal (MIM) barium strontium titanate (BST) thick film varactors designed for high power operation. An acoustically optimized varactor design is presented and compared to a non-optimized high-power varactor. The design is utilized to present a narrowband acoustic suppression technique based on defined weights. The acoustically optimized varactor consists of 162 varactor cells in a capacitive matrix. The cells in the matrix are interconnectable allowing for a variable unbiased capacitance and power rating. Due to this setup, surface acoustic waves are interrupted, and the reduced size of the cells allows for a reduced BST layer thickness, shifting the acoustic resonance away from the operational frequency. Therefore, an inverted behavior in comparison to the high-power varactor is observed with an increasing quality factor with biasing voltage. Compared to the high-power varactor, the acoustically optimized varactor design shows a 40% increased quality factor in biased state. By applying the narrowband acoustic suppression technique, an increase in quality factor of 145% is achieved compared to the unsuppressed design. In comparison to the high-power varactor, the acoustical suppressed design shows an increase in quality factor of 480% at the first acoustic resonance frequency.
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Vikulin, I. M., V. N. Litvinenko, S. V. Shutov, A. I. Maronchuk, A. N. Demenskiy, and V. I. Glukhova. "Enhancing parameters of silicon varactors using laser gettering." Технология и конструирование в электронной аппаратуре, no. 2 (2018): 29–32. http://dx.doi.org/10.15222/tkea2018.2.29.

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The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors. The mechanisms of the laser gettering effect on the parameters of varactors are analyzed.
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Малеев, Н. А., М. А. Бобров, А. Г. Кузьменков, А. П. Васильев, М. М. Кулагина, С. Н. Малеев, С. А. Блохин, В. Н. Неведомский, and В. М. Устинов. "Эпитаксиальные структуры InGaAs/InAlAs/AlAs для гетеробарьерных варакторов с низким током утечки." Письма в журнал технической физики 44, no. 19 (2018): 16. http://dx.doi.org/10.21883/pjtf.2018.19.46678.17413.

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AbstractThe quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm^2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).
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Shih, Chien-Fu, Yu-Li Hsieh, Liann-Be Chang, Ming-Jer Jeng, Zi-Xin Ding, and Shao-An Huang. "Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application." Crystals 10, no. 4 (April 10, 2020): 292. http://dx.doi.org/10.3390/cryst10040292.

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The AlGaN/GaN materials with a wide band gap, high electron mobility, and high breakdown voltage are suitable for manufacturing high-power and high-frequency electronic devices. In this study, metal Schottky contact electrodes of different dimensions are prepared on AlGaN/GaN wafers to fabricate metal–semiconductor–metal (MSM) varactors. Voltage-dependent capacitance and breakdown voltages of the varactors are measured and studied. The corresponding breakdown mechanisms of varactors with different electrode gaps are proposed. Furthermore, an anti-surge application using GaN-based MSM varactors in a signal transmission module is demonstrated, and its surge suppression capability is shown. We believe that our study will be beneficial in developing surge protection circuits for RF applications.
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Dissertations / Theses on the topic "Varactors"

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Mahdavi, Sareh. "RF power amplifiers and MEMS varactors." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=112576.

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This thesis is concerned with the design and implementation of radio frequency (RF) power amplifiers and micro-electromechanical systems---namely MEMS varactors. This is driven by the many wireless communication systems which are constantly moving towards increased integration, better signal quality, and longer battery life.
The power amplifier consumes most of the power in a receiver/transmitter system (transceiver), and its output signal is directly transmitted by the antenna without further modification. Thus, optimizing the PA for low power consumption, increased linearity, and compact integration is highly desirable.
Micro-electromechanical systems enable new levels of performance in radio-frequency integrated circuits, which are not readily available via conventional IC technologies. They are good candidates to replace lossy, low Q-factor off-chip components, which have traditionally been used to implement matching networks or output resonator tanks in class AB, class F, or class E power amplifiers. The MEMS technologies also make possible the use of new architectures, with the possibility of flexible re-configurability and tunability for multi-band and/or multi-standard applications.
The major effort of this thesis is focused on the design and fabrication of an RF frequency class AB power amplifier in the SiGe BiCMOS 5HP technology, with the capability of being tuned with external MEMS varactors. The latter necessitated the exploration of wide-tuning range MEMS variable capacitors, with prototypes designed and fabricated in the Metal-MUMPS process.
An attempt is made to integrate the power amplifier chip and the MEMS die in the same package to provide active tuning of the power amplifier matching network, in order to keep the efficiency of the PA constant for different input power levels and load conditions.
Detailed simulation and measurement results for all circuits and MEMS devices are reported and discussed.
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Brown, Dustin Anthony. "Novel Approaches to Ferroelectric and Gallium Nitride Varactors." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1398902436.

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Duchamp, Jean-Marc. "Etude et conception de structures périodiques, type lignes de transmission non linéaires, pour des applications de multiplication de fréquences en bandes V." Chambéry, 2004. http://www.theses.fr/2004CHAMS051.

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L'explosion des besoins en débits numériques des utilisateurs implique la mise en œuvre de techniques d'interconnexion de réseaux performantes. Les besoins de bande passante, à coût faible, nécessitent l'étude de nouveaux dispositifs de communication sans fils à des fréquences de plus en plus élevées. La bande de fréquences, dite bande V est une plage fréquentielle encore libre et qui présente l'avantage de limiter la propagation hertzienne à quelques centaines de mètres ce qui est bien adapté aux liaisons dites du "dernier kilomètre". La génération de fréquences au-delà de quelques dizaines de GHz, est basée sur l'utilisation de composants électroniques à résistance négative. L'inconvénient principal de cette solution est que la puissance générée diminue rapidement lorsque la fréquence de fonctionnement augmente. La solution alternative envisagée repose sur l'association d'un oscillateur et d'un multiplieur de fréquences micro-onde. La multiplication est obtenue grâce à des varactors. Leur association en réseaux périodiques concentre la puissance transmisse quelques fréquences. L'apparition de nouveaux varactors "symétriques" : les varactors hétéro structures (HBV) nécessitent une nouvelle approche des critères de choix des non-linéarités. Les performances fréquentielles de la structure de propagation sur laquelle seront répartis les varactors ont également fait l'objet d'une analyse. L'étude comparative des coefficients de propagation pour une ligne micro ruban, un guide d'onde coplanaire et une Fin-line a permis de mettre en évidence les avantages et inconvénients de chacune de ces structures autour de 60 GHz. Les définitions de nouveaux modèles électriques permettant la prise en compte des différentes pertes dans les structures périodiques ont pu être validé par des réalisations. L'étude de la répartition de la non-linéarité le long de la structure de propagation a également démontré l'intérêt des structures périodiques. L'ensemble des ces résultats a conduit à la définition d'une topologie de ligne de propagation non linéaire optimale qui multiplie une fréquence de 20 GHz par trois. Cette ligne repose sur une structure de guide d'onde co-planaire chargée périodiquement par des HBV avec un rendement de puissance de 2Q% pour une bande passante de plus de 30 %
Ln spite of high growth in telecommunications equipment performances, numerical information demands have never been so strong. The need of low cost bandwidth implies to study new wireless networks with higher frequencies. The V-band frequencies (circa 60 GR) corresponds to a non-allocated frequency range which main advantage is to be perfectly adapted for the last mile transmission between providers and users. Frequencies generation higher than tell GR is based on the use of negative resistances electronic components such as tunnel effect or Gunn effect. The micro-waves power generated by the oscillator directly depends from the negative resistance variation dynamics. However, the power generated reduces rapidly when frequency increases (1/f3 variation). A microwave frequency multiplier associated to the oscillator forms a good alternative. Non-linear components such as varactors allow harmonic generations. Furtherrnore, if we integrate them in periodical networks, the output power increases owing to the fact that the input frequency is concentrated in fewer harmonics. The aim of this PhD is to define structural and technological solutions that optimise frequency multiplier periodical networks (Periodically loaded non-linear transmission lines). The use of new heterostructure-barrier varactors (HBV's) implies a brand new approach of the NL varactors selection criteria. A new method allowing the comparison between the HBV non-linearity performances bas been designed. A comparative study of the propagation parameters of 3 linear transmission lines (micro-strip, coplanar wave guide and Fin-line) points out the pro and cons of each structure in the selected 60 GR frequency band. New electrical models taking into account the various losses in the periodical structures have also been design and realise. The study of the non-linearity distribution along the transmission line shows the advantage of the PL structure. Finally, these various results permit the design and realisation of a frequency tripler with 60 GR output frequency based on NL transmission line. This optimal line is a coplanar wave-guide transmission line periodically loaded by HBV's. Fourteen sections produce for this frequency tripler a 20% efficiency output, power for a 30% bandwidth
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Price, Tony S. "Nonlinear Properties of Nanoscale Barium Strontium Titanate Microwave Varactors." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4390.

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Barium strontium titanate thin film varactors have been widely investigated for the purpose of creating tunable front-ends for RF and microwave systems. There is an abundance of literature observing the capacitance-voltage behavior and methods on improving tunability. However, there is a lack of thorough investigations on the nonlinear behavior, specifically the third order intermodulation distortion, and the parameters that impact it. There is also a research void that needs to be filled for nanoscale barium strontium titanate varactors as nanotechnology becomes increasingly prevalent in the design of RF and microwave components. This work aims to advance the understanding of nonlinear properties of barium strontium titanate varactors. Temperature and voltage impacts on the third order intermodulation distortion products of BST varactors are observed by two-tone measurements. The material properties of the films are correlated with the nonlinear behavior of the varactors. Additionally, size reduction capabilities are shown by fabricating planar barium strontium titanate interdigital varactors with nanoscale size gaps between the electrodes. Modeling techniques are also investigated.
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Yue, Hailing. "Design and Optimization of Barium Strontium Titanate Ferroelectric Varactors." University of Dayton / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1348779036.

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Kim, Jang-Yong. "Processing and On-Wafer Test of Ferroelectric Film Microwave Varactors." Doctoral thesis, Stockholm : Information and Communication Technology (ICT), Kungl. Tekniska högskolan (KTH), 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4226.

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Maget, Judith. "Varactors and inductors for integrated RF circuits in standard MOS technologies." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=967584388.

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Krishnamurthi, Kathiravan Carleton University Dissertation Engineering Electronics. "Heterostructure varactors on InP and GaAs for millimeter-wave frequency triplers." Ottawa, 1995.

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Lieu, Anthony D. "A New Architecture For Low-Voltage Low-Phase-Noise High-Frequency CMOS LC Voltage-Controlled Oscillator." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7109.

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Presented in this work is a novel design technique for a low-phase-noise high-frequency CMOS voltage-controlled oscillator. Phase noise is generated from electrical noise near DC, the oscillation frequency, and its harmonics. In CMOS technology, low-frequency flicker noise dominates the close-in phase noise of the VCO. The proposed technique minimizes the VCO phase noise by seeking to eliminate the effect of flicker noise on the phase noise. This is accomplished by canceling out the DC component of the impulse sensitivity function (ISF) corresponding to each flicker-noise source, thus preventing the up-conversion of low-frequency noise into phase noise. The proposed circuit topology is a modified version of the complementary cross-coupled transconductance VCO, where additional feedback paths are introduced such that a designer can choose the feedback ratios, transistor sizes, and bias voltages to achieve the previously mentioned design objectives. A step-by-step design algorithm is presented along with a MATLAB script to aid in the computation of the ISFs and the phase noise of the VCO. Using this algorithm, a 5-GHz VCO was designed and fabricated in a 0.18μm CMOS process, and then tested for comparison with simulated results.
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Perrier, Anne-Laure. "Conception et réalisation d’adaptateurs d’impédances et de diviseurs de puissance miniatures et accordables par varactors." Chambéry, 2006. http://www.theses.fr/2006CHAMS034.

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Pour faire face à l'encombrement de certains systèmes hyperfréquences, la conception de dispositifs accordables est une solution exploitée actuellement. Les adaptateurs d'impédances et les diviseurs de puissance sont des éléments fréquemment utilisés respectivement pour l'adaptation de transistors ou d'antennes et pour la réalisation de réseaux d'antennes à balayage. Basés généralement sur le principe de la ligne quart d'onde, ces dispositifs sont encombrants et ont une bande passante limitée et fixe. Dans cette thèse, nous avons développé une étude théorique et conçu des adaptateurs d'impédances et diviseurs de puissance accordables à l'aide de varactors. Nous avons pu réaliser des dispositifs compacts, non plus basés sur la ligne quart d'onde, mais sur le principe d'une ligne de transmission haute impédance chargée par des capacités. Deux méthodes sont présentées pour optimiser et mesurer un adaptateur d'impédances miniature et accordable. Puis nous présentons plusieurs diviseurs de puissance miniatures. Les uns sont fixes, les autres accordables en fréquence, en isolation ou en puissance. .
To decrease the size of some radio-frequency systems, the design of tunable devices is a solution currently exploited. The tuners and the power dividers are devices frequently used respectively for the transistor or antenna matching and for the realization of phase array antenna. Generally based on the principle of the quarter wave line, these bulky devices present limited and fixed bandwidth. In this thesis, we developed a theoretical study and designed of tunable and miniaturized tuners and power dividers using varactors. We show we could realized compact devices not based on the classical quarter wave line but on the principle of a high characteristic impedance transmission line charged by capacitors. Two methods are presented to optimize and measure a miniature and tunable tuner. Then we present several miniature power dividers. The ones are fixed, the other are tunable in frequency, isolation or power. .
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Books on the topic "Varactors"

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Gutiérrez, Íñigo, Juan Meléndez, and Erik Hernández. Design and Characterization of Integrated Varactors for RF Applications. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/9780470035924.

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Garca, Iñigo Gutiérrez. Design and characterisation of integrated varactors for RF applications. Chichester: John Wiley & Sons, 2006.

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1974-, Meléndez Juan, and Hernández Erik, eds. Design and characterization of integrated varactors for RF applications. Chichester, West Sussex, England: Wiley, 2007.

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United States. National Aeronautics and Space Administration., ed. [Building an LO source at 1036 GHz for a receiver]: Final technical report. [Washington, DC: National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. [ Building an LO source at 1036 GHz for a receiver]: Final technical report. [Washington, DC: National Aeronautics and Space Administration, 1995.

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Gutierrez, Inigo, Juan Meléndez, and Erik Hernández. Design and Characterization of Integrated Varactors for RF Applications. Wiley & Sons, Limited, John, 2007.

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Gutierrez, Inigo, Juan Meléndez, and Erik Hernández. Design and Characterization of Integrated Varactors for RF Applications. Wiley & Sons, Incorporated, John, 2007.

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Gutierrez, Inigo, Juan Meléndez, and Erik Hernández. Design and Characterization of Integrated Varactors for RF Applications. Wiley, 2007.

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Gutierrez, I. G., Erik Hernandez, Juan Ndez, Inigo Gutierrez, and Juan Melendez. Design and Characterization of Integrated Varactors for RF Applications. Wiley & Sons, Incorporated, John, 2007.

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Solymar, L., D. Walsh, and R. R. A. Syms. Principles of semiconductor devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0009.

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p–n junctions are examined initially and the potential distribution in the junction region is derived based on Poisson’s equation. Next the operation of the transistor is discussed, both in terms of the physics and of equivalent circuits. Potential distributions in metal–semiconductor junctions are derived and the concept of surface states is introduced. The physics of tunnel junctions is discussed in terms of their band structure. The properties of varactor diodes are described and the possibility of parametric amplification is touched upon. Further devices discussed are field effect transistors, charge-coupled devices, controlled rectifiers, and the Gunn effect. The fabrication of microelectronic circuits is discussed, followed by the more recent but related field of micro-electro-mechanical systems. The discipline of nanoelectronics is introduced including the role of carbon nanotubes. Finally, the effect of the development of semiconductor technology upon society is discussed.
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Book chapters on the topic "Varactors"

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Lippens, D., X. Melique, S. Arscott, T. David, V. Duez, J. Carbonell, P. Mounaix, O. Vanbesien, and F. Mollot. "High Performance Heterostructure Barrier Varactors." In Terahertz Sources and Systems, 53–67. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0824-2_4.

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Gevorgian, Spartak, and Andrei Vorobiev. "Substrates, Varactors and Passive Components." In Engineering Materials and Processes, 115–73. London: Springer London, 2009. http://dx.doi.org/10.1007/978-1-84882-507-9_4.

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Chatterjee, Shouri, Kong Pang Pun, Nebojša Stanić, Yannis Tsividis, and Peter Kinget. "Weak Inversion MOS Varactors for Tunable Integrators." In Analog Circuit Design Techniques at 0.5 V, 49–60. Boston, MA: Springer US, 2007. http://dx.doi.org/10.1007/978-0-387-69954-7_3.

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Mendes, Luís, Eduardo J. Solteiro Pires, Paulo B. de Moura Oliveira, José A. Tenreiro Machado, Nuno M. Fonseca Ferreira, João Caldinhas Vaz, and Maria J. Rosário. "Design Optimization of Radio Frequency Discrete Tuning Varactors." In Lecture Notes in Computer Science, 343–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01129-0_38.

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Pires, E. J. Solteiro, Luís Mendes, P. B. de Moura Oliveira, J. A. Tenreiro Machado, João C. Vaz, and Maria J. Rosário. "Design of Radio-Frequency Integrated CMOS Discrete Tuning Varactors Using the Particle Swarm Optimization Algorithm." In Distributed Computing, Artificial Intelligence, Bioinformatics, Soft Computing, and Ambient Assisted Living, 1231–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02481-8_184.

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Zhu, Zeqin, Gennady Gildenblat, James Victory, and Colin C. McAndrew. "Surface-Potential-Based MOS Varactor Model." In Compact Modeling, 327–55. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8614-3_11.

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Straelhi, C., J. V. Bouvet, and D. Goral. "p-i-n and varactor diodes." In The Microwave Engineering Handbook, 183–212. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-4552-5_9.

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Kollberg, E. L. "Heterostructure Varactor Diodes for Microwave and Millimetre Wave Power Generation." In Microwave Physics and Techniques, 3–13. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5540-3_1.

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Kakati, Anusmita, P. S. Ganaraj, Koushik Guha, and M. Kavicharan. "Design and Analysis of MEMS Varactor for Ka Band Applications." In Lecture Notes in Electrical Engineering, 377–87. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2308-1_39.

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Rahman, Md Atiqur, and Pankaj Sarkar. "Varactor-Loaded Tunable SIW Filter with Wide Upper Stopband Characteristic." In Proceedings of the International Conference on Computing and Communication Systems, 515–22. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4084-8_49.

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Conference papers on the topic "Varactors"

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Lee, Chun-Hsien, Shu-Hui Tsai, Chung-Hsien Lin, Ryutaro Maeda, Jiunn-Jye Tsaur, Kuan-Jen Fang, Ju-Mei Lu, Cheng-Kuo Lee, and Weileun Fang. "Development of microelectromechanical varactors." In Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, edited by Bernard Courtois, Jean Michel Karam, Steven P. Levitan, Karen W. Markus, Andrew A. O. Tay, and James A. Walker. SPIE, 2001. http://dx.doi.org/10.1117/12.425389.

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Bonetti, Stefano, Jang-Yong Kim, Sergiy I. Khartsev, and Alexander M. Grishin. "Buried Tantalate-Niobate Microwave Varactors." In 15th IEEE International Symposium on Applications of Ferroelectrics. ISAF 2006. IEEE, 2006. http://dx.doi.org/10.1109/isaf.2006.4387902.

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Zhang, Yao, Rui Ma, Yogish C. Kudva, Philippe Buhlmann, and Steven Koester. "Glucose sensing with graphene varactors." In 2016 IEEE SENSORS. IEEE, 2016. http://dx.doi.org/10.1109/icsens.2016.7808854.

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Gevorgian, S., and A. Vorobiev. "Tuneable metamaterials based on ferroelectric varactors." In 2007 European Microwave Conference. IEEE, 2007. http://dx.doi.org/10.1109/eumc.2007.4405212.

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Shakhrai, Maxim V. "Microelectromechanical (MEMS) varactors for mobile communications." In SPIE Proceedings, edited by Alexander I. Melker. SPIE, 2004. http://dx.doi.org/10.1117/12.555375.

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Marrero-Martin, M., J. Garcia, B. Gonzalez, and A. Hernandez. "Circuit models for PN integrated varactors." In 2011 Spanish Conference on Electron Devices (CDE). IEEE, 2011. http://dx.doi.org/10.1109/sced.2011.5744242.

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Roy, Anindya Lal, Anirban Bhattacharya, Ritesh Ray Chaudhuri, Joydeep Basu, and Tarun Kanti Bhattacharyya. "Small-deflection analysis of microelectromechanical varactors." In 2011 Annual IEEE India Conference (INDICON). IEEE, 2011. http://dx.doi.org/10.1109/indcon.2011.6139441.

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Magierowski, Sebastian, Takis Zourntos, Jean-Francois Bousquet, and Zhixing Zhao. "Compact parametric downconversion using MOS varactors." In 2009 IEEE MTT-S International Microwave Symposium Digest (MTT). IEEE, 2009. http://dx.doi.org/10.1109/mwsym.2009.5165962.

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Ahn, Youngjoon, Kwangsuk Han, and Hyungcheol Shin. "Physical RF modeling of Junction Varactors." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.lp2-2.

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Li, Ming, Robert G. Harrison, Rony E. Amaya, Jean-Marc Duchamp, Philippe Ferrari, and N. Garry Tarr. "CMOS varactors in NLTL pulse-compression applications." In 2007 European Microwave Conference. IEEE, 2007. http://dx.doi.org/10.1109/eumc.2007.4405467.

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Reports on the topic "Varactors"

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Lin, Jenshan, and Tatsuo Itoh. Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada253504.

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