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Journal articles on the topic 'Vapour-liquid-solid growth'

Author: Grafiati

Published: 28 June 2021

Last updated: 9 February 2022

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1

Schönherr, Piet, Liam J. Collins-McIntyre, ShiLei Zhang, Patryk Kusch, Stephanie Reich, Terence Giles, Dominik Daisenberger, Dharmalingam Prabhakaran, and Thorsten Hesjedal. "Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires." Nanoscale Research Letters 9, no. 1 (2014): 127. http://dx.doi.org/10.1186/1556-276x-9-127.

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2

Li, Shisheng, Yung-Chang Lin, Wen Zhao, Jing Wu, Zhuo Wang, Zehua Hu, Youde Shen, et al. "Vapour–liquid–solid growth of monolayer MoS2 nanoribbons." Nature Materials 17, no. 6 (April 23, 2018): 535–42. http://dx.doi.org/10.1038/s41563-018-0055-z.

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3

Dalacu, Dan, Alicia Kam, D. Guy Austing, Xiaohua Wu, Jean Lapointe, Geof C. Aers, and Philip J. Poole. "Selective-area vapour–liquid–solid growth of InP nanowires." Nanotechnology 20, no. 39 (September 2, 2009): 395602. http://dx.doi.org/10.1088/0957-4484/20/39/395602.

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4

Boutarek, N., Didier Chaussende, and Roland Madar. "High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism." Materials Science Forum 556-557 (September 2007): 105–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.105.

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The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane partial pressure. Based on the vapourliquid- solid mechanism, we present a new configuration for the growth of SiC which could allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. 3C-SiC crystals exhibiting well-faceted morphology are obtained at 1100-1200°C with outstanding deposition rates, varying from 1 to 1.5 mm/h in Ti-Si melt. At 1200-1300°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si melts, with growth rates up to 200 ,m/h. Details on the experiments will be given and the potentialities of such process for the growth of bulk crystals will be discussed..

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5

Zha, M., L. Zanotti, G. Zuccalli, M. Ardoino, R. Capelletti, and C. Paorici. "Vapour-liquid-solid Growth and Characterisation of N-methylurea Crystals." Crystal Research and Technology 32, no. 1 (1997): 213–20. http://dx.doi.org/10.1002/crat.2170320121.

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6

Hashimoto, Shinobu, and Akira Yamaguchi. "Growth of Cr2O3 whiskers by the vapour-liquid-solid mechanism." Journal of Materials Science 31, no. 2 (January 1996): 317–22. http://dx.doi.org/10.1007/bf01139146.

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7

Shakthivel, D., W. T. Navaraj, Simon Champet, Duncan H. Gregory, and R. S. Dahiya. "Propagation of amorphous oxide nanowires via the VLS mechanism: growth kinetics." Nanoscale Advances 1, no. 9 (2019): 3568–78. http://dx.doi.org/10.1039/c9na00134d.

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8

Madroñero, A. "Possibilities for the vapour-liquid-solid model in the vapour-grown carbon fibre growth process." Journal of Materials Science 30, no. 8 (April 1995): 2061–66. http://dx.doi.org/10.1007/bf00353034.

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9

Mårtensson, T., M. Borgström, W. Seifert, B. J. Ohlsson, and L. Samuelson. "Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth." Nanotechnology 14, no. 12 (October 17, 2003): 1255–58. http://dx.doi.org/10.1088/0957-4484/14/12/004.

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10

Ng, I. K., and H. Suzuki. "Low temperature growth of Si nanowires via vapour–liquid–solid mechanism." Materials Research Innovations 13, no. 3 (September 2009): 192–95. http://dx.doi.org/10.1179/143307509x437590.

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11

Jafari Jam, Reza, Axel R. Persson, Enrique Barrigón, Magnus Heurlin, Irene Geijselaers, Víctor J. Gómez, Olof Hultin, Lars Samuelson, Magnus T. Borgström, and Håkan Pettersson. "Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates." Nanoscale 12, no. 2 (2020): 888–94. http://dx.doi.org/10.1039/c9nr08025b.

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We report on the synthesis of InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour–liquid–solid growth. We also demonstrate growth of InP nanowire p–n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates.

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12

Jeong, H., T. E. Park, H. K. Seong, M. Kim, U. Kim, and H. J. Choi. "Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism." Chemical Physics Letters 467, no. 4-6 (January 2009): 331–34. http://dx.doi.org/10.1016/j.cplett.2008.11.022.

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13

Huo, Kaifu, Yanwen Ma, Yemin Hu, Jijiang Fu, Bin Lu, Yinong Lu, Zheng Hu, and Yi Chen. "Synthesis of single-crystalline α-Si3N4nanobelts by extended vapour–liquid–solid growth." Nanotechnology 16, no. 10 (August 26, 2005): 2282–87. http://dx.doi.org/10.1088/0957-4484/16/10/050.

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14

Ganesha, R., D. Arivuoli, and P. Ramasamy. "Vapour-Liquid-Solid Mechanism of Growth of Whiskers of Some Semiconducting Compounds." Crystal Research and Technology 26, no. 3 (1991): K60—K63. http://dx.doi.org/10.1002/crat.2170260326.

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15

O'Dowd, B. J., T. Wojtowicz, S. Rouvimov, X. Liu, R. Pimpinella, V. Kolkovsky, T. Wojciechowski, et al. "Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires." Journal of Applied Physics 116, no. 6 (August 14, 2014): 063509. http://dx.doi.org/10.1063/1.4893021.

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16

Zhang, Jian, Qiushi Wang, Feng Wang, Xiaohui Chen, Weiwei Lei, Qiliang Cui, and Guangtian Zou. "Plasma-assisted self-catalytic vapour–liquid–solid growth of β-SiC nanowires." Journal of Physics D: Applied Physics 42, no. 3 (January 8, 2009): 035108. http://dx.doi.org/10.1088/0022-3727/42/3/035108.

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17

Yang, Wenlong, Jiao Liu, Xiaofang Lai, Zhihua Zhang, Bingsheng Du, Jing Wu, and Jikang Jian. "Self-confined vapour-liquid-solid growth of SnS/SiOx core/shell nanowires." Journal of Crystal Growth 548 (October 2020): 125839. http://dx.doi.org/10.1016/j.jcrysgro.2020.125839.

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18

Ferro, Gabriel. "Overview of 3C-SiC Crystalline Growth." Materials Science Forum 645-648 (April 2010): 49–54. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.49.

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The objective of this review is to set the present state of the art of 3C-SiC crystalline growth by emphasizing the new and promising trends related to this polytype elaboration. The need of high quality 3C seed is showed to be more important than for other polytypes, in order to avoid β→ transformation during high temperature bulk growth. The effect of various parameters, such as supersaturation, gas phase composition, strain or impurities, is discussed. Recent results obtained using vapour-liquid-solid mechanism and continuous feed vapour phase transport are bringing new insight on 3C-SiC stability and setting new standards of material quality.

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19

Vuong, S. T., and S. S. Sadhal. "Growth and translation of a liquid-vapour compound drop in a second liquid. Part 1. Fluid mechanics." Journal of Fluid Mechanics 209 (December 1989): 617–37. http://dx.doi.org/10.1017/s0022112089003241.

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The fluid dynamics associated with a compound drop consisting of a vapour bubble, partly surrounded by its own liquid in another immiscible liquid is considered. The fluid motion is analysed in the limit of Stokes flow and at the same time the surface tension forces are considered to be large enough to allow the interfaces to have uniform curvature. The flow field consists of translation and growth that can arise from change of phase.An exact analytical solution for the axisymmetric flow field is obtained. The important results of physical interest are the drag force and the flow behaviour. In the case without growth, the drag force lies between the bubble and the solid-sphere limits for a sphere of the same volume as the total liquid and vapour dispersed phase. The maximum drag force is observed when the liquid and vapour volumes are nearly the same. This is the effect of weak circulation due to the smaller available space as compared with a spherical drop. With growth this effect appears to be enhanced. The flow streamlines exhibit secondary vortices in the dispersed phase when there is growth. The velocity field and the drag results here are applied to the heat transfer problem for the compound drop in Part 2 of this two-part series.

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20

Kumar, Arun, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, and Massimo Longo. "MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires." Coatings 11, no. 6 (June 15, 2021): 718. http://dx.doi.org/10.3390/coatings11060718.

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We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour–liquid–solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core–shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core–shell diameters in the range of 50–130 nm and an average length up to 7 µm.

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21

Lorenzzi, Jean, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole, and Gabriel Ferro. "Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas." Materials Science Forum 679-680 (March 2011): 111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.111.

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In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two different deposition techniques were used and compared: vapour-liquid-solid (VLS) mechanism and chemical vapour deposition (CVD). The results in terms of surface morphology evolution and the polytype formation using these growth techniques were studied and compared. It was observed both 4H lateral growth from the mesa sidewalls and 3C enlargement on top of the mesas, the former being faster with CVD and VLS. Only VLS technique allowed elimination of twin boundaries for proper orientation of the mesa sidewalls.

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22

Jegenyes, Nikoletta, Jean Lorenzzi, Véronique Soulière, Jacques Dazord, François Cauwet, and Gabriel Ferro. "Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature." Materials Science Forum 645-648 (April 2010): 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.127.

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Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

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23

Chaussende, D., G. Ferro, and Y. Monteil. "Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE." Journal of Crystal Growth 234, no. 1 (January 2002): 63–69. http://dx.doi.org/10.1016/s0022-0248(01)01651-7.

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24

Sannodo, Naoki, Asuka Osumi, Kenichi Kaminaga, Shingo Maruyama, and Yuji Matsumoto. "Vapour–liquid–solid-like growth of high-quality and uniform 3C–SiC heteroepitaxial films on α-Al2O3(0001) substrates." CrystEngComm 23, no. 8 (2021): 1709–17. http://dx.doi.org/10.1039/d0ce01793k.

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We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi₂ flux in nanoscale.

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25

Lorenzzi, Jean, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, and Gabriel Ferro. "3C-SiC MOS Based Devices: From Material Growth to Device Characterization." Materials Science Forum 679-680 (March 2011): 433–36. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.433.

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In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (Dit)can be drastically decreased down to 1.2  1010 eV-1cm-2 at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.

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26

Vo-Ha, Arthur, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, Véronique Soulière, Dominique Planson, Christian Brylinski, and Gabriel Ferro. "p-Doped SiC Growth on Diamond Substrate by VLS Transport." Materials Science Forum 740-742 (January 2013): 331–34. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.331.

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This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results.

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27

Jayavel, R., T. Mochiku, S. Ooi, and K. Hirata. "Vapour–liquid–solid (VLS) growth mechanism of superconducting Bi–Sr–Ca–Cu–O whiskers." Journal of Crystal Growth 229, no. 1-4 (July 2001): 339–42. http://dx.doi.org/10.1016/s0022-0248(01)01177-0.

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28

Vo-Ha, A., D. Carole, M. Lazar, D. Tournier, F. Cauwet, V. Soulière, N. Thierry-Jebali, et al. "Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport." Thin Solid Films 548 (December 2013): 125–29. http://dx.doi.org/10.1016/j.tsf.2013.09.030.

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29

Ferro, Gabriel, and Christophe Jacquier. "Growth by a vapour–liquid–solid mechanism: a new approach for silicon carbide epitaxy." New J. Chem. 28, no. 8 (2004): 889–96. http://dx.doi.org/10.1039/b316410c.

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30

Ying-Jie, Xing, Yu Da-Peng, Xi Zhong-He, and Xue Zeng-Quan. "Investigation of the growth process of Si nanowires using the vapour-liquid-solid mechanism." Chinese Physics 11, no. 10 (October 2002): 1047–50. http://dx.doi.org/10.1088/1009-1963/11/10/315.

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31

Jayavel, R., T. Mochiku, S. Ooi, and K. Hirata. "Studies on the growth aspects of Bi2Sr2CaCu2O8+δ whiskers by vapour–liquid–solid mechanism." Physica C: Superconductivity 357-360 (September 2001): 345–49. http://dx.doi.org/10.1016/s0921-4534(01)00243-x.

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32

Bagal, Vivekanand S., Girish P. Patil, Sachin R. Suryawanshi, Mahendra A. More, and Padmakar G. Chavan. "Vapour–liquid–solid‐assisted growth of cadmium telluride nanowires and their field emission properties." Micro & Nano Letters 11, no. 3 (March 2016): 160–63. http://dx.doi.org/10.1049/mnl.2015.0411.

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33

Carole, Davy, Arthur Vo Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, Dominique Tournier, François Cauwet, et al. "Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport." Materials Science Forum 740-742 (January 2013): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.177.

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This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using Vapour-Liquid-Solid (VLS) transport at temperature ≤ 1100°C. Focus was made on the nucleation step by observing the evolution of the growth as a function of growth duration with variable Si-content of the Al-Si liquid phase. Addition of propane during the initial heating ramping-up not only avoids liquid de-wetting but also allows good starting of the epitaxial growth. Additionally, it was observed that, by increasing the silicon content in the liquid, the morphology of the grown SiC is improved, and no parasitic Al4C3 inclusions are formed. Limiting the growth rate is found to be essential for getting controlled smooth growth process.

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34

Carole, Davy, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, Pierre Brosselard, Véronique Soulière, Laurent Auvray, Gabriel Ferro, and Christian Brylinski. "Buried Selective Growth of p-Doped SiC by VLS Epitaxy." Materials Science Forum 717-720 (May 2012): 169–72. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.169.

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Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

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35

Vo-Ha, Arthur, Mickaël Rebaud, Mihai Lazar, Alexandre Tallaire, Véronique Soulière, Gabriel Ferro, and Davy Carole. "Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport." Materials Science Forum 806 (October 2014): 33–37. http://dx.doi.org/10.4028/www.scientific.net/msf.806.33.

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This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

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36

Jacquier, Christophe, Gabriel Ferro, Phillippe Godignon, Josep Montserrat, Olivier Dezellus, and Yves Monteil. "Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate." Materials Science Forum 457-460 (June 2004): 241–44. http://dx.doi.org/10.4028/www.scientific.net/msf.457-460.241.

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37

Suryawanshi, Sachin R., Prashant K. Bankar, Mahendra A. More, and Dattatray J. Late. "Vapour–liquid–solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour." RSC Advances 5, no. 80 (2015): 65274–82. http://dx.doi.org/10.1039/c5ra10160c.

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Single crystalline ultra long In₂Se₃ nanowires have been grown via thermal evaporation route on Au/Si substrates and explored its field emission investigations at ∼1 × 10⁻⁸ mbar.

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38

Lorenzzi, Jean, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, and Gabriel Ferro. "Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate." Materials Science Forum 717-720 (May 2012): 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.165.

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In this work we report on SiC epitaxial growth by vapour-liquid-solid (VLS) mechanism on on-axis 4H-SiC(0001) substrates which were previously patterned to form mesa structures. The liquid phase was set to Al70Si30. At 1100°C, it led to very high homoepitaxial lateral growth (140 µm/h) with pronounced spiral growth and in plane anisotropy of growth rate. Upon temperature increase to 1200 °C, this spiral growth was suppressed and the lateral growth was further increased up to 180 µm/h. The in-plane versus out-of-plane anisotropy of growth rate was found to be as high as 60 at this temperature and 46 at 1100°C.

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39

Berckmans, Stéphane, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Véronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin, and Christian Brylinski. "Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport." Materials Science Forum 679-680 (March 2011): 99–102. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.99.

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In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

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40

Vasiliauskas, Remigijus, Maya Marinova, Mikael Syväjärvi, Alkyoni Mantzari, Ariadne Andreadou, Jean Lorenzzi, Gabriel Ferro, Efstathios K. Polychroniadis, and Rositza Yakimova. "Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds." Materials Science Forum 645-648 (April 2010): 175–78. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.175.

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Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

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41

Vo-Ha, Arthur, Mickaël Rebaud, Davy Carole, Mihai Lazar, Alexandre Tallaire, Véronique Soulière, Jose Carlos Pinero, Daniel Araújo, and Gabriel Ferro. "3C-SiC Seeded Growth on Diamond Substrate by VLS Transport." Materials Science Forum 778-780 (February 2014): 234–37. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.234.

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This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An epitaxial relationship of grown SiC with the seed was succesfully achieved when inserting a silicidation step before the VLS growth. This silicidation consists in the formation of a SiC intermediate layer on the diamond substrate by solid-state reaction with a silicon layer deposited at 1000 or 1350 °C. On the 1350°C formed SiC buffer layer, p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. For the 1000°C buffer layer, the SiC deposit after VLS growth is much denser but mostly polycrystalline. Interfacial reactivity and diffusion are considered to explain the obtained results.

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42

Chaussende, Didier, Michel Pons, and Roland Madar. "Gas Fed Top-Seeded Solution Growth of Silicon Carbide." Materials Science Forum 527-529 (October 2006): 111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.111.

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The growth of SiC crystals or epilayers from the liquid phase has already been reported for many years. Even if the resulting material can be of very high structural quality and the possibility to close micropipes was demonstrated, handling the liquid phase still is a challenge. Moreover, it is highly difficult to stabilize the C dissolution front and then to stabilize the growth front over a long growth time. Based on the Vapour-Liquid-Solid mechanism, we present a new configuration for the growth of SiC single crystal which should allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. The process consists in a modified top seeded solution growth method, in which the liquid is held under electromagnetic levitation and fed from the gas phase. In a Co-Si solution fed from a propane flow at 1350°C, thick epitaxial layers of 4H-SiC have been grown at 28 0m/h. The potentiality of this new process will be discussed in the paper.

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Kennedy, O. W., E. R. White, M. S. P. Shaffer, and P. A. Warburton. "Vapour-liquid-solid growth of ZnO-ZnMgO core–shell nanowires by gold-catalysed molecular beam epitaxy." Nanotechnology 30, no. 19 (February 22, 2019): 194001. http://dx.doi.org/10.1088/1361-6528/ab011c.

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Ahlén, Niklas, Mats Johnsson, Ann-Kristin Larsson, and Bo Sundman. "On the carbothermal vapour–liquid–solid (VLS) mechanism for TaC, TiC, and TaxTi1–xC whisker growth." Journal of the European Ceramic Society 20, no. 14-15 (December 2000): 2607–18. http://dx.doi.org/10.1016/s0955-2219(00)00121-7.

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Musin, I. R., N. Shin, and M. A. Filler. "Diameter modulation as a route to probe the vapour–liquid–solid growth kinetics of semiconductor nanowires." J. Mater. Chem. C 2, no. 17 (2014): 3285–91. http://dx.doi.org/10.1039/c3tc32038c.

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Kim-Hak, Olivier, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Davy Carole, Patrick Chaudouët, Olivier Dezellus, Didier Chaussende, Jean Claude Viala, and Christian Brylinski. "Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase." Materials Science Forum 645-648 (April 2010): 163–66. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.163.

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The influence of nitrogen impurity on the stabilization of 3C-SiC polytype has been studied during vapour-liquid-solid (VLS) growth on 6H-SiC(0001) seed with Si-Ge melt. By changing the partial pressure of N2 during growth, it was found that the proportion of 3C-SiC inside the grown material increases with N2 partial pressure. 6H inclusions are only found for high purity (low N2 content) conditions. The possible interactions proposed to explain this effect are divided in two effects: i) lattice parameter modification and ii) surface induced lateral enlargement variation. A combination of both effects is suspected.

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Soueidan, Maher, Gabriel Ferro, François Cauwet, L. Mollet, Christophe Jacquier, Ghassan Younes, and Yves Monteil. "Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature." Materials Science Forum 527-529 (October 2006): 271–74. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.271.

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The vapour-Liquid-Solid mechanism was used for growing epitaxial SiC layers on onaxis 6H-SiC and 4H-SiC substrates. By feeding Al70Si30 melts with propane, homoepitaxial growth was demonstrated down to 1100°C on both polytypes. At this temperature, the surface morphology is rough and non uniform with spiral growth forming large hillocks at the places where screw dislocations emerge from the substrate. Raman spectroscopy confirms the absence of the 3C-SiC polytype and shows the high Al doping of the layers. This growth temperature of 1100°C is the lowest one ever reported for growing homoepitaxial layers on low tilt angle SiC substrates. Increasing the temperature to 1200°C eliminates these hillocks but creates other morphological features due to fast substrate etching at this high temperature before growth starts.

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Taurino, A., and M. A. Signore. "Concurrent growth of InSe wires and In2O3tulip-like structures in the Au-catalytic vapour-liquid-solid process." Materials Research Express 2, no. 6 (June 5, 2015): 065001. http://dx.doi.org/10.1088/2053-1591/2/6/065001.

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Bettge, Martin, Scott MacLaren, Steve Burdin, Jian-Guo Wen, Daniel Abraham, Ivan Petrov, and Ernie Sammann. "Low-temperature vapour–liquid–solid (VLS) growth of vertically aligned silicon oxide nanowires using concurrent ion bombardment." Nanotechnology 20, no. 11 (February 25, 2009): 115607. http://dx.doi.org/10.1088/0957-4484/20/11/115607.

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Gumaste, J. L., S. K. Singh, P. K. Sahoo, and R. K. Galgali. "Synthesis of TiC Fibres from TiO2Containing Raw Materials by Vapour-Liquid-Solid (V-L-S) Growth Method." Transactions of the Indian Ceramic Society 62, no. 2 (April 2003): 97–99. http://dx.doi.org/10.1080/0371750x.2003.11012084.

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