Relevant bibliographies by topics / Vapour-liquid-solid growth

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Vapour-liquid-solid growth'

Author: Grafiati
Published: 28 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Vapour-liquid-solid growth"

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Schönherr, Piet, Liam J. Collins-McIntyre, ShiLei Zhang, Patryk Kusch, Stephanie Reich, Terence Giles, Dominik Daisenberger, Dharmalingam Prabhakaran, and Thorsten Hesjedal. "Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires." Nanoscale Research Letters 9, no. 1 (2014): 127. http://dx.doi.org/10.1186/1556-276x-9-127.

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Li, Shisheng, Yung-Chang Lin, Wen Zhao, Jing Wu, Zhuo Wang, Zehua Hu, Youde Shen, et al. "Vapour–liquid–solid growth of monolayer MoS2 nanoribbons." Nature Materials 17, no. 6 (April 23, 2018): 535–42. http://dx.doi.org/10.1038/s41563-018-0055-z.

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Dalacu, Dan, Alicia Kam, D. Guy Austing, Xiaohua Wu, Jean Lapointe, Geof C. Aers, and Philip J. Poole. "Selective-area vapour–liquid–solid growth of InP nanowires." Nanotechnology 20, no. 39 (September 2, 2009): 395602. http://dx.doi.org/10.1088/0957-4484/20/39/395602.

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Boutarek, N., Didier Chaussende, and Roland Madar. "High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism." Materials Science Forum 556-557 (September 2007): 105–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.105.

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The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane partial pressure. Based on the vapourliquid- solid mechanism, we present a new configuration for the growth of SiC which could allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. 3C-SiC crystals exhibiting well-faceted morphology are obtained at 1100-1200°C with outstanding deposition rates, varying from 1 to 1.5 mm/h in Ti-Si melt. At 1200-1300°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si melts, with growth rates up to 200 ,m/h. Details on the experiments will be given and the potentialities of such process for the growth of bulk crystals will be discussed..
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Zha, M., L. Zanotti, G. Zuccalli, M. Ardoino, R. Capelletti, and C. Paorici. "Vapour-liquid-solid Growth and Characterisation of N-methylurea Crystals." Crystal Research and Technology 32, no. 1 (1997): 213–20. http://dx.doi.org/10.1002/crat.2170320121.

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Hashimoto, Shinobu, and Akira Yamaguchi. "Growth of Cr2O3 whiskers by the vapour-liquid-solid mechanism." Journal of Materials Science 31, no. 2 (January 1996): 317–22. http://dx.doi.org/10.1007/bf01139146.

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Shakthivel, D., W. T. Navaraj, Simon Champet, Duncan H. Gregory, and R. S. Dahiya. "Propagation of amorphous oxide nanowires via the VLS mechanism: growth kinetics." Nanoscale Advances 1, no. 9 (2019): 3568–78. http://dx.doi.org/10.1039/c9na00134d.

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Madroñero, A. "Possibilities for the vapour-liquid-solid model in the vapour-grown carbon fibre growth process." Journal of Materials Science 30, no. 8 (April 1995): 2061–66. http://dx.doi.org/10.1007/bf00353034.

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Mårtensson, T., M. Borgström, W. Seifert, B. J. Ohlsson, and L. Samuelson. "Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth." Nanotechnology 14, no. 12 (October 17, 2003): 1255–58. http://dx.doi.org/10.1088/0957-4484/14/12/004.

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Ng, I. K., and H. Suzuki. "Low temperature growth of Si nanowires via vapour–liquid–solid mechanism." Materials Research Innovations 13, no. 3 (September 2009): 192–95. http://dx.doi.org/10.1179/143307509x437590.

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Dissertations / Theses on the topic "Vapour-liquid-solid growth"

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Da, Conceicao Lorenzzi Jean Carlos. "Growth and doping of heteroepitaxial 3C-SiC layers on α-SiC substrates using Vapour-Liquid-Solid mechanism." Thesis, Lyon 1, 2010. http://www.theses.fr/2010LYO10179.

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L'utilisation récente d'une voie originale de croissance cristalline basée sur les mécanismes vapeur-liquide-solide (VLS) à partir d'un bain Ge-Si a permis des améliorations importantes de la qualité cristalline des couches minces hétéroépitaxiales de SiC-3C sur substrats sur substrat α-SiC(0001). Ce travail a pour but d'approfondir les connaissances sur cette technique de croissance, d'améliorer le procédé et de déterminer les propriétés du matériau élaboré. La première partie est dédiée à la compréhension et la maîtrise des différents mécanismes impliqués dans la croissance de SiC-3C par VLS. Cela a notamment permis la détermination des paramètres limitant la taille des échantillons et la démonstration des avantages à utiliser des alliages fondus contant 50 at% de Ge au lieu de 75 at%. Une étude de la croissance latérale sur substrats patternés a donné des indications intéressantes pouvant être intégrées dans le modèle d'élimination des macles. L'incorporation intentionnelle et non intentionnelle de dopants de type n et p pendant la croissance VLS a été suivie. Pour le dopage n, nous avons démontré l'existence d'un lien clair entre l'impureté N et la stabilisation du polytype SiC-3C. En outre, nous avons réussi à abaisser le dopage résiduel n des couches en dessous de 1x1017 cm-3. Pour le dopage p, le meilleur élément n'est pas le Ga mais l'Al, même s'il doit être ajouté à un alliage de type Si-Ge pour éviter l'homoépitaxie. Enfin, ces couches ont été caractérisées optiquement et électriquement par différentes techniques. Les mesures C-V et G-V ont permis d'estimer une concentration très faible (7×109 cm-2) de charges fixes dans l'oxyde SiO2 ainsi qu'une densité d'états d'interface aussi basse que 1.2×1010 cm-2eV-1 à 0.63 eV sous la bande de conduction. Ces valeurs record sont une très bonne base pour le développement d'un composant de type MOSFET en SiC-3C
Recently, the use of an original growth approach based on vapour-liquid-solid (VLS) mechanism with Ge-Si melts has led to significant improvement of the crystalline quality of the 3C-SiC thin layers heteroepitaxially grown on α-SiC(0001) substrate. This work tries to deepen the knowledge of such specific growth method, to improve the process and to determine the properties of the grown material. The first part was dedicated to the understanding and mastering of the various mechanisms involved in 3C-SiC growth by VLS mechanism. This led to the determination of the parameters limiting sample size and the demonstration of the benefits of using 50 at% Ge instead of 75 at% Ge melts. A study of lateral enlargement on patterned substrates gave some interesting hints which can be integrated in the model of twin defect elimination. The incorporation of non intentional and intentional n- and p-type dopants during VLS growth was studied. For n-type doping, a clear link between N impurity and 3C polytype stability was demonstrated. Besides, high purity layers with residual n-type doping below 1x1017 cm-3 were achieved. For p-type doping, the best element was shown to be Al and not Ga, even if it has to be alloyed with Ge-Si melts to avoid homoepitaxial growth. Finally, these layers were characterised by several optical and electrical means like Raman spectroscopy, low temperature photoluminescence, deep leveltransient spectroscopy and MOS capacitors measurements. Very low concentrationsof fixed oxide charges estimated about 7×109 cm-2 and interface states densities Dit equal to 1.2×1010 cm-2eV-1at 0.63 eV below the conduction band have been achieved. These record values are a very good base toward 3C-SiC MOSFET
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Stanislav, Silvestr. "Příprava nízkodimenzionálních III-V polovodičů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Lekhal, Kaddour. "Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V." Phd thesis, Université Blaise Pascal - Clermont-Ferrand II, 2013. http://tel.archives-ouvertes.fr/tel-00844400.

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Cette thèse est consacrée à l'étude de l'outil d'épitaxie HVPE (Hydride Vapour Phase Epitaxy) pour la synthèse avec et sans catalyseur de nanofils semiconducteurs GaN et GaAs. Une étude systématique de l'influence des conditions expérimentales sur la croissance des fils de GaN est effectuée, afin de démontrer la faisabilité de cette croissance sur la surface des substrats saphir plan-c et silicium sans aucun traitement de la surface préalablement à la croissance. Nous avons démontré la croissance par VLS-HVPE, de nanofils de GaN de diamètres constants de 40 à 200 nm, de longueurs supérieures à 60 μm et présentant des qualités optique et cristallographique remarquables. Pour les nanofils de GaAs, la stabilité, inédite, de la phase cubique zinc-blende pour des diamètres de 10 nm a été démontrée par le procédé de croissance VLS-HVPE sur des longueurs de quelques dizaines de micromètres. Les mécanismes de croissance sont discutés à partir des diagrammes de phase et de la physique de la croissance HVPE qui met en oeuvre des précurseurs gazeux chlorés. Pour les semiconducteurs III-V, cette étude permet d'envisager des applications liées aux nanofils longs qui jusque là n'étaient exploitées que pour le silicium. Ces travaux montrent que dans le contexte des Nanosciences, la HVPE, outil épitaxial à fortes vitesses de croissance, mérite une audience élargie, et peut s'inscrire comme un outil complémentaire efficace aux procédés MOVPE et MBE pour le façonnage contrôlé de la matière à l'échelle nanométrique.
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Awaluddin, Amir. "Fundamental studies of chemical vapour deposition processes : Far-IR synchrotron studies of the adsorption of tim oxide precursors on tin oxide and direct liquid injection CVD growth of titania thin films on silicon." Thesis, University of Salford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.272929.

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Jaffal, Ali. "Single photon sources emitting in the telecom band based on III-V nanowires monolithically grown on silicon." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI019.

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Une source de photons uniques (SPU) dans la bande télécom, épitaxiées sur un substrat de silicium (Si), est le Saint Graal pour réaliser des dispositifs CMOS compatibles pour les technologies de l'information optiques. Pour atteindre cet objectif, nous proposons la croissance monolithique de Boîte Quantiques-Nanofils (BQ-NFs) InAs/InP sur des substrats de silicium par épitaxie par jet moléculaire (EJM) en utilisant la méthode vapeur-liquide-solide (VLS). Au début, nous avons concentré nos efforts sur l'optimisation des conditions de croissance afin d'obtenir une densité de NF ultra-faible sans effort avant ou après la croissance, ce qui nous permet d'exciter optiquement un seul BQ-NF sur l'échantillon tel qu'il a été épitaxiées et de préserver la croissance monolithique sur le silicium. Par la suite, nous avons porté notre attention sur l'amélioration de l'extraction de la lumière de la BQ InAs du guide d'onde InP NF vers l'espace libre pour obtenir une source lumineuse avec un profil d'émission en Champ Lointain (CL) gaussien afin de coupler efficacement les photons individuels à une fibre optique monomode. Cela a été réalisé en contrôlant la géométrie de NF pour obtenir des NFs en forme d'aiguille avec un très petit angle de conicité et un diamètre de NF adapté pour supporter un guide d'onde monomode. Une telle géométrie a été produite avec succès en utilisant un équilibre induit par la température sur les croissances axiale et radiale pendant la croissance des NFs catalysée par l'or. Des mesures optiques ont confirmé la nature mono-photonique des photons émis avec g2(0) = 0,05 et un profil d'émission gaussien en CL avec un angle d'émission θ = 30°. Pour obtenir des performances optimales, nous avons ensuite abordé une question cruciale dans cette géométrie de NF représentée par l'état de polarisation inconnu des photons émis. Pour résoudre ce problème, une solution consiste à intégrer un seul BQ dans un NF avec une section asymétrique optimisée pour inhiber un état de polarisation et améliorer l'efficacité d'émission de l'autre. Une stratégie de croissance originale a été proposée, permettant d'obtenir des photons à haut degré de polarisation linéaire parallèle à l'axe allongé des NFs asymétriques. Enfin, l'encapsulation des BQ-NFs dans des guides d'ondes en silicium amorphe (a-Si) a ouvert la voie à la production des dispositifs des SPU entièrement intégrés sur Si dans un avenir proche
A telecom band single photon source (SPS) monolithically grown on silicon (Si) substrate is the Holy Grail to realize CMOS compatible devices for optical-based information technologies. To reach this goal, we propose the monolithic growth of InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) method. In the beginning, we have focused our efforts on optimizing the growth conditions aiming at achieving ultra-low NWs density without any pre-growth or post-growth efforts allowing us to optically excite a single QD-NW on the as-grown sample and to preserve the monolithic growth on silicon. Subsequently, we have turned our attention on enhancing the InAs QD light extraction from the InP NW waveguide towards the free space to achieve a bright source with a Gaussian far-field (FF) emission profile to efficiently couple the single photons to a single-mode optical fiber. This was done by controlling the NW geometry to obtain needlelike-tapered NWs with a very small taper angle and a NW diameter tailored to support a single mode waveguide. Such a geometry was successfully produced using a temperature-induced balance over axial and radial growths during the gold-catalyzed growth of the NWs. Optical measurements have confirmed the single photon nature of the emitted photons with g2(0) = 0.05 and a Gaussian FF emission profile with an emission angle θ = 30°. For optimal device performances, we have then tackled a crucial issue in such NW geometry represented by the unknown polarization state of the emitted photons. To solve this issue, one solution is to embed a single QD in a NW with an asymmetrical cross-section optimized to inhibit one polarization state and to improve the emission efficiency of the other one. An original growth strategy was proposed permitting us to obtain highly linearly polarized photons along the elongated axis of the asymmetrical NWs. Finally, the encapsulation of the QD-NWs within amorphous silicon (a-Si) waveguides have opened the path to produce fully integrated SPSs devices on Si in the near future
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Book chapters on the topic "Vapour-liquid-solid growth"

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Boutarek, N., Didier Chaussende, and Roland Madar. "High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism." In Materials Science Forum, 105–8. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.105.

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Soueidan, Maher, Gabriel Ferro, François Cauwet, L. Mollet, Christophe Jacquier, Ghassan Younes, and Yves Monteil. "Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature." In Silicon Carbide and Related Materials 2005, 271–74. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.271.

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Sultana, Jenifar, Somdatta Paul, Anupam Karmakar, and Sanatan Chattopadhyay. "Investigating the Growth-Time Dependent Comparative Performance of Vapour-Liquid-Solid (VLS) Grown p-CuO/n-Si Thin Film Hetero-Junction Solar Cells." In Springer Proceedings in Physics, 157–64. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3908-9_18.

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Tinker, Peter B., and Peter Nye. "Solute Interchange between Solid, Liquid, and Gas Phases in the Soil." In Solute Movement in the Rhizosphere. Oxford University Press, 2000. http://dx.doi.org/10.1093/oso/9780195124927.003.0007.

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We noted in chapter 1 that the concentration of solute in the soil solution is buffered by solute adsorbed on the soil surfaces. We also show in chapter 4 that the overall mobility of ions is related to their amounts and mobilities in the solid and solution. In this chapter, we focus on the soil solution concentration, primarily to show how the factors controlling it can be incorporated in models of the growth of crops and the leaching of nutrients or pollutants, such as those described in chapters 10 and 11. We examine the general principles governing the interchange of solutes between all phases in the soil, dealing first with inorganic ions, especially plant nutrients and heavy metals; and later with organic solutes, including biocides, which may also occur in the vapour phase. We also consider the reactions between metal ions and other organic or inorganic ions in solution to form complexes, such as CuOH+. The method of displacing the pore solution from a column of soil with ethanol, introduced by Ischtscherikow (1907), has been examined by Moss (1963, 1969). He found, in accord with theory (section 3.1.3), that the activity ratios (K)/(Ca + Mg)1/2 and (K)/(Ca)1/2 determined in the displaced solutions remained constant over considerable changes in soil moisture level to the point of saturation. He also found that the activity ratio (K)/(Ca + Mg)1/2 in the extracts from a wide range of soils agreed well with the activity ratio determined by the null point method of Beckett & Craig (1964). In this method, the soil is shaken with dilute CaCl2 solution containing graded amounts of potassium, and the activity ratio at which the soil does not gain or lose potassium to the solution is determined. Ethanol appears to displace solution from the fine as well as the coarse pores, and successive fractions, devoid of alcohol, have the same composition. For small samples of soil, it is more convenient to add a heavy liquid that is immiscible with water, and extract the solution by centrifuging (Kinniburgh & Miles 1983). Suction methods are useful for following changes in composition of moist soils. They should be used with care since they change the pressure of CO2 and hence the concentration of the bicarbonate ion.
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Conference papers on the topic "Vapour-liquid-solid growth"

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Uchino, T., C. H. de Groot, P. Ashburn, K. N. Bourdakos, and D. C. Smith. "Ge-catalyzed Vapour-Liquid-Solid growth of Carbon Nanotubes." In ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/essder.2006.307676.

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Lorenzzi, J., V. Soulière, F. Cauwet, D. Carole, G. Ferro, Gabriel Ferro, and Paul Siffert. "Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrate." In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518276.

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Mandal, Subrata, Subhrajit Sikdar, Rajib Saha, Anupam Karmakar, and Sanatan Chattopadhyay. "Investigating the impact of growth time on the electrical performance of vapour-liquid-solid (VLS) grown Ge/n-Si hetero-junction." In 2020 International Symposium on Devices, Circuits and Systems (ISDCS). IEEE, 2020. http://dx.doi.org/10.1109/isdcs49393.2020.9262999.

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Kawaji, Masahiro. "Studies of Vibration-Induced Multi-Phase Fluid Phenomena and Pulsating Heat Pipe Performance Under Microgravity." In ASME/JSME 2003 4th Joint Fluids Summer Engineering Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/fedsm2003-45664.

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High quality semi-conductor and protein crystals can be grown in space by utilizing the microgravity environment in which natural convection and sedimentation effects are suppressed. But some vibrations exist on space platforms such as Space Shuttle and International Space Station that can induce crystal and fluid motions, affecting the quality of the crystals grown in space. Since the effects of small vibrations (called g-jitter) on crystal growth are not yet precisely known in space, experimental and theoretical investigations are being conducted to better understand the vibration effects on the motion of protein crystals and solid particles in liquid-filled cells. Another topic under investigation is the operation of pulsating heat pipes under microgravity. A recent experiment performed on a parabolic airplane has shown the positive effect of reduced gravity on the pulsating motion of vapour-liquid two-phase flow and heat transport in pulsating heat pipes.
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Das, S. K., M. Bock, M. Biswas, E. McGlynn, and R. Grunwald. "Strong multiphoton-absorption-induced UV luminescence from ZnO nanorod arrays grown by vapour-liquid-solid mechanism." In 11th European Quantum Electronics Conference (CLEO/EQEC). IEEE, 2009. http://dx.doi.org/10.1109/cleoe-eqec.2009.5192301.

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Paul, Somdatta, Anindita Das, Jenifar Sultana, Anupam Karmakar, Sanatan Chattopadhyay, and Anirban Bhattacharyya. "Performance investigation of n-ZnO nanowire/p-CuO thin film heterojunction solar cell grown by chemical bath deposition and vapour liquid solid technique." In 2015 6th International Conference on Computers and Devices for Communication (CODEC). IEEE, 2015. http://dx.doi.org/10.1109/codec.2015.7893200.

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Heyes, Andrew L., Loukas Botsis, Niall R. McGlashan, and Peter R. N. Childs. "A Thermodynamic Analysis of Chemical Looping Combustion." In ASME 2011 Turbo Expo: Turbine Technical Conference and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/gt2011-45480.

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Recently, interest has grown in chemical looping combustion (CLC) because it is seen as a technique that may allow cost-effective carbon capture and storage (CCS). In CLC the overall reaction by which chemical energy is released is between a hydrocarbon and air as in conventional combustors. However, the reaction is completed in two separate oxidation and reduction steps occurring in different reaction vessels. In the oxidizer (or air reactor) an oxygen carrier, usually a metal, is exothermically oxidized in air resulting in an oxide and a hot air stream (oxygen depleted). The exhaust gasses may be expanded through a turbine to produce work, while the oxide passes to the reduction vessel (or fuel reactor). Here, it reacts with the fuel, is reduced and the metal regenerated. The metal then returns to the oxidizer to complete the loop. The exhaust gasses from the reducer contain only carbon dioxide and water so that, after expansion and work extraction, the water may be condensed leaving a stream of pure CO2 ready for storage. Hydrocarbon fuels will continue to be used for decades, so, in the face of ambitious emission reduction targets, CCS is an important technology and methods, such as CLC, that offer automatic CO2 separation (so-called inherent carbon capture) are particularly attractive. Despite this obvious advantage CLC was not originally conceived for the purposes of CCS, but rather as a means to produce pure carbon dioxide free from contamination by inert gases such as nitrogen. In the context of power generation it was then proposed as a means to improve the exergetic efficiency of energy conversion processes using hydrocarbons. Combustion is usually a highly irreversible process and necessitates the rejection of large quantities of heat from power cycles leading to the low thermal efficiency of gas turbines and the like. The two-stage reaction approach of CLC can reduce the irreversibility and the extent of heat rejection and hence provide improved cycle efficiency. Ideally, both goals would be simultaneously achieved thereby offsetting both the cost of carbon capture and of compression, transportation and storage. In the paper we present a thermodynamic analysis of CLC to illustrate its potential for improving efficiency. We will then develop a methodology for selecting oxygen carriers based on their thermodynamic properties and review several candidate materials. In particular, we will compare, from a thermodynamic perspective, solid phase oxygen carriers as used in fluidised bed based reaction systems and the liquid/vapour phase carriers previously suggested by the authors. Finally, comments on practical implementations of CLC in power plant will be presented.
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