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Journal articles on the topic 'Vapour deposition'

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Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Chaudhari, Mandakini N. "Thin film Deposition Methods: A Critical Review." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (June 30, 2021): 5215–32. http://dx.doi.org/10.22214/ijraset.2021.36154.

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The aim of this review paper is to present a critical analysis of existing methods of thin film deposition. Paper discusses some thin film techniques which are advanced and popular. The advantages and disadvantages of each method are mentioned. The two major areas of interest discussed are physical and chemical vapor deposition techniques. In general, thin film is a small thickness that produces by physical vapour deposition (PVD) and chemical vapour deposition (CVD). Despite the PVD technique has a few drawbacks, it remains an important method and more beneficial than CVD technique for depositing thin films materials. It is examined that some remarkable similarities and difference between the specific methods. The sub methods which are having common principle are classified. The number of researchers attempted to explain the how the specific method is important and applicable for the deposition of thin films. In conclusion the most important method of depositing thin films is CVD. For our research work the Spray Pyrolysis technique, which is versatile and found suitable to use.

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2

BACHMANN, P. K., D. LEERS, and D. U. WIECHERT. "DIAMOND CHEMICAL VAPOUR DEPOSITION." Le Journal de Physique IV 02, no. C2 (September 1991): C2–907—C2–913. http://dx.doi.org/10.1051/jp4:19912109.

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3

Boone, D. H. "Physical vapour deposition processes." Materials Science and Technology 2, no. 3 (March 1986): 220–24. http://dx.doi.org/10.1179/mst.1986.2.3.220.

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4

Roy, S. K. "Laser chemical vapour deposition." Bulletin of Materials Science 11, no. 2-3 (November 1988): 129–35. http://dx.doi.org/10.1007/bf02744550.

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5

Mundra, S. S., S. S. Pardeshi, S. S. Bhavikatti, and Atul Nagras. "Development of an integrated physical vapour deposition and chemical vapour deposition system." Materials Today: Proceedings 46 (2021): 1229–34. http://dx.doi.org/10.1016/j.matpr.2021.02.069.

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6

Camejo, M. D., and L. L. Bonilla. "Theory of homogeneous vapour condensation and surface deposition from boundary layers." Journal of Fluid Mechanics 706 (July 6, 2012): 534–59. http://dx.doi.org/10.1017/jfm.2012.278.

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AbstractHomogeneous condensation of vapours mixed with a carrier gas in the stagnation point boundary layer flow near a cold wall is considered. There is a condensation region near the wall with supersaturated vapour. Assuming that the surface tension times the molecular area is much larger than the thermal energy far from the wall, droplets are nucleated exclusively in a narrow nucleation layer where the Zeldovich flux of clusters surpassing the critical nucleus size is at a maximum. The vapour condenses in the free molecular regime on the droplets, which are thermophoretically attracted to the wall. Unlike the narrow condensation region for heterogeneous condensation on solid particles, in the case of homogeneous condensation the condensation region is wide even when the rate of vapour scavenging by droplets is large. A singular perturbation theory of homogeneous vapour condensation in boundary layer flow approximates very well the vapour and droplet density profiles, the nucleation layer and the deposition rates at the wall for wide ranges of the wall temperature and the scavenging parameter $B$. A key point in the theory is to select a trial vapour number density profile among a one parameter family of profiles between an upper and a lower bound. The maximum of the Zeldovich flux for supercritical nuclei provides the approximate location of the nucleation layer and an approximate droplet density profile. Then the condensate number of molecules and the vapour density profile are calculated by matched asymptotic expansions that also yield the deposition rates. For sufficiently large wall temperatures, a more precise corrected asymptotic theory is given.

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7

Marinkovic, S. N. "Chemical Vapour Deposition of Diamond." Materials Science Forum 214 (May 1996): 171–78. http://dx.doi.org/10.4028/www.scientific.net/msf.214.171.

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8

DESAI, P. B., and V. G. DATE. "Physical Vapour Deposition of Beryllium." Mineral Processing and Extractive Metallurgy Review 13, no. 1 (October 1994): 145–55. http://dx.doi.org/10.1080/08827509408914107.

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9

Swinbanks, David. "Chemical vapour deposition advances superconducters." Nature 332, no. 6162 (March 1988): 295. http://dx.doi.org/10.1038/332295a0.

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10

Choy, K. "Chemical vapour deposition of coatings." Progress in Materials Science 48, no. 2 (2003): 57–170. http://dx.doi.org/10.1016/s0079-6425(01)00009-3.

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11

Jönsson, Ulf, Göran Olofsson, Magnus Malmqvist, and Inger Rönnberg. "Chemical vapour deposition of silanes." Thin Solid Films 124, no. 2 (February 1985): 117–23. http://dx.doi.org/10.1016/0040-6090(85)90253-6.

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12

Wahl, G., and F. Schmaderer. "Chemical vapour deposition of superconductors." Journal of Materials Science 24, no. 4 (April 1989): 1141–58. http://dx.doi.org/10.1007/bf02397041.

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13

NEU, J. C., A. CARPIO, and L. L. BONILLA. "Theory of surface deposition from boundary layers containing condensable vapour and particles." Journal of Fluid Mechanics 626 (May 10, 2009): 183–210. http://dx.doi.org/10.1017/s0022112008005624.

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Heterogeneous condensation of vapours mixed with a carrier gas in the stagnation point boundary layer flow near a cold wall is considered in the presence of solid particles much larger than the mean free path of vapour particles. The supersaturated vapour condenses on the particles by diffusion, and particles and droplets are thermophoretically attracted to the wall. Assuming that the heat of vaporization is much larger than kB∞, where ∞ is the temperature far from the wall, vapour condensation occurs in a condensation layer (CL). The CL width and characteristics depend on the parameters of the problem, and a parameter R yielding the rate of vapour scavenging by solid particles is particularly important. Assuming that the CL is so narrow that temperature, particle density and velocity do not change appreciably inside it, an asymptotic theory is found, the δ-CL theory, that approximates very well the vapour and droplet profiles, the dew point shift and the deposition rates at the wall for wide ranges of the wall temperature w and the scavenging parameter R. This theory breaks down for w very close to the maximum temperature yielding non-zero droplet deposition rate, w, M. If the width of the CL is assumed to be zero (0-CL theory), the vapour density reaches local equilibrium with the condensate immediately after it enters the dew surface. The 0-CL theory yields appropriate profiles and deposition rates in the limit as R → ∞ and also for any R, provided w is very close to w, M. Nonlinear multiple scales also improve the 0-CL theory, providing good uniform approximations to the deposition rates and the profiles for large R or for moderate R and w very close to w, M, but it breaks down for other values of w and small R.

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14

Bain, M. F., B. M. Armstrong, and H. S. Gamble. "Deposition of tungsten by plasma enhanced chemical vapour deposition." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–827—Pr8–833. http://dx.doi.org/10.1051/jp4:19998105.

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15

Tillmann, Wolfgang, Evelina Vogli, and Jan Nebel. "Deposition of Multi-Functional Coatings by Physical Vapour Deposition." Materials Science Forum 539-543 (March 2007): 1194–99. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.1194.

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Multifunctional coatings open new dimensions due to a combination of properties like high friction and wear resistance, electrical attributes, heat or corrosion protection in one system. In this study multifunctional coatings for in-situ temperature measurements on cutting inserts as well as multilayer coatings have been investigated. Corresponding metallurgical analyses together with mechanical tests are presented.

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16

Kuo, C. "The deposition of Na-β″-Al2O3 by vapour-vapour reaction." Solid State Ionics 100, no. 1-2 (September 1997): 157–63. http://dx.doi.org/10.1016/s0167-2738(97)00256-7.

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17

Pchelkin, Vyacheslav, and Tatyana Duyun. "Wear-resisting properties of multilayer coated carbide blades under different technological conditions of turning of heat-resistant steel." MATEC Web of Conferences 224 (2018): 01110. http://dx.doi.org/10.1051/matecconf/201822401110.

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Experimented results of wear-resisting properties of carbide blades with multilayer wear-resistance coatings, obtained by different processes: chemical vapor deposition and spraying by condensation from vapour (gas) phase while turning of corrosion –resistant heat-resistant steel 08Х18Н10Т are presented.

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18

Monir, Shafiul, Giray Kartopu, Vincent Barrioz, Dan Lamb, Stuart J. C. Irvine, Xiaogang Yang, and Yuriy Vagapov. "Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment." Applied Sciences 10, no. 5 (March 3, 2020): 1734. http://dx.doi.org/10.3390/app10051734.

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The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented.

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19

Carlsson, Jan-Otto, Bertil Holmberg, Jorma Korvola, Erkki Kolehmainen, Knut Maartmann-Moe, and Nils Tælnes. "Precursor Design for Chemical Vapour Deposition." Acta Chemica Scandinavica 45 (1991): 864–69. http://dx.doi.org/10.3891/acta.chem.scand.45-0864.

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20

Kouchi, Akira, and Toshio Kuroda. "Amorphous Ar Produced by Vapour Deposition." Japanese Journal of Applied Physics 29, Part 2, No. 5 (May 20, 1990): L807—L809. http://dx.doi.org/10.1143/jjap.29.l807.

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21

van Dieten, V. E. J. "Electrochemical Vapour Deposition of Doped LaCrO3." ECS Proceedings Volumes 1995-1, no. 1 (January 1995): 960–72. http://dx.doi.org/10.1149/199501.0960pv.

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22

Gracio, J. J., Q. H. Fan, and J. C. Madaleno. "Diamond growth by chemical vapour deposition." Journal of Physics D: Applied Physics 43, no. 37 (September 2, 2010): 374017. http://dx.doi.org/10.1088/0022-3727/43/37/374017.

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23

Lindahl, Erik, Mikael Ottosson, and Jan-Otto Carlsson. "Chemical Vapour Deposition of Metastable Ni3N." ECS Transactions 25, no. 8 (December 17, 2019): 365–72. http://dx.doi.org/10.1149/1.3207614.

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24

Ruppi, S., and A. Larsson. "Chemical vapour deposition of κ-Al2O3." Thin Solid Films 388, no. 1-2 (June 2001): 50–61. http://dx.doi.org/10.1016/s0040-6090(01)00814-8.

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25

Brookes, Kenneth JA, and Andreas Lümkemann. "PLATIT – pioneers in physical vapour deposition." Metal Powder Report 68, no. 2 (March 2013): 24–27. http://dx.doi.org/10.1016/s0026-0657(13)70060-2.

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26

Forsgren, Katarina, and Anders H«rsta. "Halide chemical vapour deposition of Ta2O5." Thin Solid Films 343-344 (April 1999): 111–14. http://dx.doi.org/10.1016/s0040-6090(98)01624-1.

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27

DG Teer Coating Services Ltd. "Physical vapour deposition—equipment and service." Vacuum 37, no. 8-9 (January 1987): 720–21. http://dx.doi.org/10.1016/0042-207x(87)90072-8.

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28

Wieczorek, C. "Chemical vapour deposition of tantalum disilicide." Thin Solid Films 126, no. 3-4 (April 1985): 227–32. http://dx.doi.org/10.1016/0040-6090(85)90315-3.

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29

Vanleeuw, D., D. Sapundjiev, G. Sibbens, S. Oberstedt, and P. Salvador Castiñeira. "Physical vapour deposition of metallic lithium." Journal of Radioanalytical and Nuclear Chemistry 299, no. 2 (August 2, 2013): 1113–20. http://dx.doi.org/10.1007/s10967-013-2669-6.

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30

Li, J. H., X. Li, X. H. Wang, J. X. Hu, X. Y. Chu, X. Fang, and Z. P. Wei. "Preparing molybdenum disulphide by vapour deposition." Surface Engineering 32, no. 4 (March 24, 2016): 245–51. http://dx.doi.org/10.1179/1743294415y.0000000051.

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31

Auvert, Geoffroy. "Laser chemical vapour deposition for microelectronics." Applied Surface Science 86, no. 1-4 (February 1995): 466–74. http://dx.doi.org/10.1016/0169-4332(94)00451-x.

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32

Hageman, P. R., J. J. Schermer, and P. K. Larsen. "GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition." Thin Solid Films 443, no. 1-2 (October 2003): 9–13. http://dx.doi.org/10.1016/s0040-6090(03)00906-4.

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33

Sharma, Uttam, Sachin S. Chauhan, Jayshree Sharma, A. K. Sanyasi, J. Ghosh, K. K. Choudhary, and S. K. Ghosh. "Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition." Journal of Physics: Conference Series 755 (October 2016): 012010. http://dx.doi.org/10.1088/1742-6596/755/1/012010.

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34

Abhinandan, Lala, and Andreas Holländer. "Localized deposition of hydrocarbon using plasma activated chemical vapour deposition." Thin Solid Films 457, no. 2 (June 2004): 241–45. http://dx.doi.org/10.1016/j.tsf.2003.10.014.

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35

Hwang, N. M., and D. Y. Yoon. "Driving force for deposition in the chemical vapour deposition process." Journal of Materials Science Letters 13, no. 19 (1994): 1437–39. http://dx.doi.org/10.1007/bf00405056.

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36

Spee, C. I. M. A., F. Verbeek, J. G. Kraaijkamp, J. L. Linden, T. Rutten, H. Delhaye, E. A. van der Zouwen, and H. A. Meinema. "Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors." Materials Science and Engineering: B 17, no. 1-3 (February 1993): 108–11. http://dx.doi.org/10.1016/0921-5107(93)90090-a.

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37

Oehr, C., and H. Suhr. "Deposition of silver films by plasma-enhanced chemical vapour deposition." Applied Physics A Solids and Surfaces 49, no. 6 (December 1989): 691–96. http://dx.doi.org/10.1007/bf00616995.

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38

Stuart, Bryan W., and George E. Stan. "Physical Vapour Deposited Biomedical Coatings." Coatings 11, no. 6 (May 21, 2021): 619. http://dx.doi.org/10.3390/coatings11060619.

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This Special Issue was devoted to developments made in Physical Vapour Deposited (PVD) biomedical coatings for various healthcare applications. The scrutinized PVD methods were Radio-Frequency Magnetron Sputtering (RF-MS), Cathodic Arc Evaporation, Pulsed Electron Deposition and its variants, Pulsed Laser Deposition, and Matrix Assisted Pulsed Laser Evaporation (MAPLE), due to their great promise especially in the dentistry and orthopaedics. These methods have yet to gain traction for industrialization and large-scale application in biomedicine. A new generation of implant coatings can be made available by the (1) incorporation of organic moieties (e.g., proteins, peptides, enzymes) into thin films by innovative methods such as combinatorial MAPLE, (2) direct coupling of therapeutic agents with bioactive glasses or ceramics within substituted or composite layers via RF-MS, or (3) by innovation in high energy deposition methods such as arc evaporation or pulsed electron beam methods.

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39

Jašek, Ondřej, Petr Synek, Lenka Zajíčková, Marek Eliáš, and Vít Kudrle. "Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric Pressure." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 311–13. http://dx.doi.org/10.2478/v10187-011-0049-9.

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Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric PressureCarbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.

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40

Ros, Katrin, Anders Johansen, Ilona Riipinen, and Daniel Schlesinger. "Effect of nucleation on icy pebble growth in protoplanetary discs." Astronomy & Astrophysics 629 (September 2019): A65. http://dx.doi.org/10.1051/0004-6361/201834331.

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Solid particles in protoplanetary discs can grow by direct vapour deposition outside of ice lines. The presence of microscopic silicate particles may nevertheless hinder growth into large pebbles, since the available vapour is deposited predominantly on the small grains that dominate the total surface area. Experiments on heterogeneous ice nucleation, performed to understand ice clouds in the Martian atmosphere, show that the formation of a new ice layer on a silicate surface requires a substantially higher water vapour pressure than the deposition of water vapour on an existing ice surface. In this paper, we investigate how the difference in partial vapour pressure needed for deposition of vapour on water ice versus heterogeneous ice nucleation on silicate grains influences particle growth close to the water ice line. We developed and tested a dynamical 1D deposition and sublimation model, where we include radial drift, sedimentation, and diffusion in a turbulent protoplanetary disc. We find that vapour is deposited predominantly on already ice-covered particles, since the vapour pressure exterior of the ice line is too low for heterogeneous nucleation on bare silicate grains. Icy particles can thus grow to centimetre-sized pebbles in a narrow region around the ice line, whereas silicate particles stay dust-sized and diffuse out over the disc. The inhibition of heterogeneous ice nucleation results in a preferential region for growth into planetesimals close to the ice line where we find large icy pebbles. The suppression of heterogeneous ice nucleation on silicate grains may also be the mechanism behind some of the observed dark rings around ice lines in protoplanetary discs, as the presence of large ice pebbles outside ice lines leads to a decrease in the opacity there.

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41

Gómez-Aleixandre, C., J. M. Albella, F. Ojeda, and F. J. Martí. "Síntesis de materiales cerámicos mediante técnicas químicas en fase vapor (CVD)." Boletín de la Sociedad Española de Cerámica y Vidrio 42, no. 1 (February 28, 2003): 27–31. http://dx.doi.org/10.3989/cyv.2003.v42.i1.653.

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42

Schmidt, Volker, Stephan Senz, and Ulrich Gösele. "UHV chemical vapour deposition of silicon nanowires." Zeitschrift für Metallkunde 96, no. 5 (May 2005): 427–28. http://dx.doi.org/10.3139/146.018129.

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43

Sun, Fang Hong, X. G. Wang, Zhi Ming Zhang, H. S. Shen, and Ming Chen. "Chemical Vapour Deposition Diamond Coated Drawing Dies." Key Engineering Materials 259-260 (March 2004): 68–72. http://dx.doi.org/10.4028/www.scientific.net/kem.259-260.68.

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44

Kruzelecky, R. V., and S. Zukotynski. "DC Saddle-Field Plasma-Enhanced Vapour Deposition." Materials Science Forum 140-142 (October 1993): 89–106. http://dx.doi.org/10.4028/www.scientific.net/msf.140-142.89.

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45

Mohammadi, A. "CHEMICAL VAPOUR DEPOSITION OF ELECTRICALLY CONDUCTING POLYMERS." Surface Engineering 10, no. 2 (January 1994): 152–54. http://dx.doi.org/10.1179/sur.1994.10.2.152.

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46

Vasilev, Vladislav Yu, and Sergei M. Repinsky. "Chemical vapour deposition of thin-film dielectrics." Russian Chemical Reviews 74, no. 5 (May 31, 2005): 413–41. http://dx.doi.org/10.1070/rc2005v074n05abeh000886.

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47

Mainwood, A., L. Allers, A. Collins, J. F. Hassard, A. S. Howard, A. R. Mahon, H. L. Parsons, et al. "Neutron damage of chemical vapour deposition diamond." Journal of Physics D: Applied Physics 28, no. 6 (June 14, 1995): 1279–83. http://dx.doi.org/10.1088/0022-3727/28/6/035.

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48

Kuijlaars, K. J., C. R. Kleijn, and H. E. A. van den Akker. "Simulation of selective tungsten chemical vapour deposition." Materials Science in Semiconductor Processing 1, no. 1 (April 1998): 43–54. http://dx.doi.org/10.1016/s1369-8001(98)00004-3.

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49

Tägtström, P., and U. Jansson. "Chemical vapour deposition of epitaxial WO3 films." Thin Solid Films 352, no. 1-2 (September 1999): 107–13. http://dx.doi.org/10.1016/s0040-6090(99)00379-x.

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50

Boulard, Brigitte, and Youping Gao. "Vapour-phase deposition of multicomponent fluoride glasses." Comptes Rendus Chimie 5, no. 11 (November 2002): 675–78. http://dx.doi.org/10.1016/s1631-0748(02)01445-5.

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