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Dissertations / Theses on the topic 'Vapor plating'

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1

Mount, Mason B. "Chemical vapor deposition on a filament in a cylinder." Ohio : Ohio University, 1989. http://www.ohiolink.edu/etd/view.cgi?ohiou1182459287.

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2

Hunt, Andrew J. "Combustion chemical vapor deposition from liquid organic solutions." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/16836.

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3

Si, Jie. "Metalorganic chemical vapor deposition of metal oxides." Thesis, This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-12302008-063204/.

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4

Book, Gregory W. "Aerosol size effects in combustion chemical vapor deposition." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/20501.

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5

Shapiro, Michael Jay. "Chemical vapor deposition of silver films for superconducting wire applications." Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/19168.

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6

O'Brien, David F. "Annealing study of YBa2Cu3Ox thin films deposited by chemical vapor deposition on ceramic fiber tows." Thesis, Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/8650.

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7

Richards, Regina Hardin. "The chemical vapor deposition of hexagonal aluminates as a fiber-matrix interface coating for oxide-oxide composites." Thesis, Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/18958.

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8

Moss, Thomas Strong III. "The chemical vapor deposition of dispersed phase composites in the B-Si-C-H-Cl-Ar system." Diss., Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/19040.

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9

Ellzey, Karen Elizabeth. "Feasibility study of the chemical vapor infiltration of rhenium." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17534.

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10

Krishnan, Vidya. "Electroless deposition of copper for microelectronic applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/11752.

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11

Chiang, Daniel Young. "Optimization of chemical vapor infiltration of ceramic matrix composites." Thesis, Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/19964.

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12

Djugum, Richard, and n/a. "Novel fabrication processes for thin film vapour deposited strain gauges on mild steel." Swinburne University of Technology, 2006. http://adt.lib.swin.edu.au./public/adt-VSWT20070424.115951.

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Pressure measurement using a strain gauge bonded with epoxy adhesive to a metallic mechanical support has been, and still is, extensively employed, however, for some applications the use of an epoxy is inadequate, especially when temperatures exceed 120C. There is therefore particular interest in the use of thin film techniques to vacuum deposit strain gauges directly on metallic substrates. Such devices are highly cost effective when produced in large quantities due to the manufacturing techniques involved. This makes them ideally suited for use in large-volume products such as electronic weighing scales and pressure transducers. In this thesis, new techniques for fabricating thin film vapour deposited strain gauge transducers on metal substrates for application as novel pressure sensors in the fastener industry are developed. Clearly, for a vapour deposited strain gauge to function correctly, it is essential that it be deposited on a defect free, high quality electrically insulating film. This was a significant challenge in the present study since all available physical vapour deposition (PVD) equipment was direct current (DC) and insulators of around 4 um thick were needed to electrically isolate the strain gauges from metal. As a result, several methods of depositing insulators using DC were developed. The first involved the use of DC magnetron sputtering from an aluminium target to reactively deposit up to 4 um thick AlN. DC magnetron discharges suffer arc instability as the AlN forms on the target and this limits the maximum thickness that can be deposited. Consequently, the arc instability was suppressed manually by increasing argon gas flow at the onset of arcing. Although the deposited AlN showed a high insulating resistance, it was found that the breakdown voltage could significantly increase by (a) utilising a metallic interlayer between the thin film insulator and the metallic substrate and (b) annealing in air at 300C. A second deposition method involved the use of DC magnetron sputtering to deposit modulated thin film insulators in which an aluminium target was used to reactively deposit alternating layers of aluminium nitride and aluminium oxide. These films showed significant increases in average breakdown voltage when the number of layers within the composite film was increased. The third method involved the deposition of AlN thin film insulators using partially filtered cathodic arc evaporation with shielding. Initially, AlN was deposited under partially filtered conditions to obtain a relatively thick (~ 4 um) coating then, while still depositing under partially filtered conditions, a smooth top coating was deposited by using a shielding technique. The deposition of metal macroparticles is an inherent problem with cathodic arc deposition and shielding is one form of macroparticle filtering. Such particles are highly undesirable in this study as they are electrically conductive. A fourth coating technique for depositing insulators on steel was based on thermal spray technology. Insulating films of Al2O3 were plasma sprayed and then polished to thereby fabricate viable electrical insulators for vapour deposited strain gauges. With respect to depositing strain gauges two methods were employed. The first involved the sputter deposition of chromium through a shadow mask to form a strain gauge with gauge factor sensitivity of around 2. The second used cathodic arc evaporation to fabricate a multi-layered strain gauge composed of alternating CrN and TiAlN layers that yielded a gauge factor of around 3.5. The technique achieves better compatibility between gauge and insulator by allowing a wider selection of materials to form the gauge composition. Finally, a novel pressure sensor in the form of a load cell was developed that consisted of a chromium strain gauge on a steel washer electrically insulated with AlN thin film. The load cell showed good performance when tested under compressive load.
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13

Papazoglou, Despina. "CVD of ceramic coatings in a hot wall and fluidised bed reactor." Title page, contents and abstract only, 1994. http://web4.library.adelaide.edu.au/theses/09AS/09asp213.pdf.

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14

Young, Valerie Lynne Vandigrifft. "The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-06062008-170227/.

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15

Fraser, Samuel Carroll. "Prediction of thin films obliquely deposited in rotating recessed cones." Thesis, Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/9340.

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16

Boyd, Edwin Pressley. "Preparation of volatile metalorganic compounds for use in metalorganic chemical vapor deposition systems." Thesis, Georgia Institute of Technology, 1989. http://hdl.handle.net/1853/27400.

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17

Hwang, Sung-bo. "Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition /." Full text (PDF) from UMI/Dissertation Abstracts International, 2002. http://wwwlib.umi.com/cr/utexas/fullcit?p3081093.

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18

Lee, Woo Young. "Chemical vapor deposition of dispersed phase ceramic composites." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/11857.

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19

Sun, Grace Siswanto. "Simulations of platinum growth on Pt(111) using density functional theory and kinetic monte carlo simulations /." Thesis, Connect to this title online; UW restricted, 2000. http://hdl.handle.net/1773/9672.

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20

Chiang, Daniel Young. "The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/19991.

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21

Chen, Hsiao-Hui. "Formation of low temperature silicon dioxide films using chemical vapor deposition /." Online version of thesis, 1991. http://hdl.handle.net/1850/11160.

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22

Jean, Daniel Louis. "Design and operation of an advanced laser chemical vapor deposition system with on-line control." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/16486.

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23

Lee, Sangbeom. "Nondestructive examination of chemical vapor infiltration of 0°/90° SiC/Nicalon composites." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/19647.

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24

Vaidyaraman, Sundararaman. "Carbon/carbon composites by forced flow-thermal gradient chemical vapor infiltration (FCVI) process." Diss., Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/10028.

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25

Kushwaha, Alpa. "Frequency dependent properties of modified CVD grown PbTiO₃ and La-doped PbTiO₃ thin films." Thesis, Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/20832.

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26

Stephens, Alan Thomas. "Chemical vapor deposition reactor design and process optimization for the deposition of copper thin films /." Online version of thesis, 1994. http://hdl.handle.net/1850/11578.

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27

Park, Jae-hyoung. "Process planning for laser chemical vapor deposition." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/18367.

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28

Shaarawi, Mohammed Saad. "Laser chemical vapor deposition of millimeter scale three-dimensional shapes." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3023559.

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29

Grant, Ann W. "Surface studies of model catalysts using metal atoms and particles on ZnO(0001)-Zn and -O and TiO₂(110) /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/8499.

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30

Twait, Douglas J. "Codeposition of baron nitride plus aluminum nitride composites by chemical vapor deposition." Thesis, Georgia Institute of Technology, 1989. http://hdl.handle.net/1853/19581.

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31

Ryou, Jae-hyun. "III-phosphide semiconductor self-assembled quantum dots grown by metalorganic chemical vapor deposition." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3035973.

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32

Lam, Ka Man. "Determination of airborne carbonyl compounds by a thermal desorption GC/MS method : development and application of a vapour coating technique /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?CHEM%202005%20LAM.

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33

Djugum, Richard. "Novel fabrication processes for thin film vapour deposited strain gauges on mild steel." Australasian Digital Thesis Program, 2006. http://adt.lib.swin.edu.au/public/adt-VSWT20070424.115951/index.html.

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Thesis (PhD) - Swinburne University of Technology, School of Engineering and Science, 2006.
A thesis submitted for the degree of Doctor of Philosophy, School of Engineering and Science, Swinburne University of Technology, 2006. Typescript. Includes bibliographical references (p. 125-138).
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34

Ludden, John Michael. "Simulation of a cylindrical CVD reactor for deposition of silicon carbide." Thesis, Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15879.

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35

Karanikas, Christos Fotios. "Supercritical fluid deposition of thin metal films kinetics, mechanics and applications /." Amherst, Mass. : University of Massachusetts Amherst, 2009. http://scholarworks.umass.edu/dissertations/AAI3359900/.

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36

Hendricks, Warren Charles. "Metallorganic chemical vapor deposition of lead oxide and lead titanate." Thesis, Virginia Tech, 1993. http://hdl.handle.net/10919/41492.

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The purpose of this study was two-fold: firstly, the MOCVD deposition behavior of Pb(thd)2 was studied in detail and a one-dimensional kinetic model was proposed to successfully predict the effect of processing conditions on the deposition rate profile for PbO. Assuming the surface reaction is the rate-limiting step in the process, the effective activation energy for the process, Ea, was found to be 82 kJ/mol while the preexponential rate constant was found to be 33 g/cm2/min (0.15 moVcm2/min). The process was found to consistently produce a combination of the high temperature, orthorhombic modification of lead monoxide with randomly oriented plates of tetragonal lead monoxide. TEM electron diffraction was used to investigate the crystal orientation of the individual plates which was found to be in the plane normal to the <201> zone.

Secondly, the deposition behavior of PbTi03 and the resulting film structure and properties were investigated. Pb(thd)2 was used in conjunction with titanium ethoxide (Ti(OEt)4) as a titanium source. Stoichiometric lead titanate films which were found to be smooth, specular and transparent, and well-adhered were deposited on a variety of substrates by careful control of the experimental conditions. Film structure, composition, and thickness were studied and correlated to changes in various experimental parameters. Additionally, a high temperature regime at which the film stoichiometry is relatively insensitive to experimental conditions was found to occur. The effects of post-annealing on the as-deposited films including compositional changes, morphological changes and crystal structure was also studied. Some problems were obtained with film peeling on the ruthenium oxide (Ru02)-coated substrates which could be alleviated somewhat by the use of (100) oriented silicon wafer rather than (111) oriented silicon; a possible mechanism to explain this behavior is also suggested. Optical properties were obtained using UV -VISNIR transmission and reflectance spectroscopy; the ferroelectric hysteresis behavior of the films was observed using standard R T -66 A test equipment.
Master of Science

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37

Hanigofsky, John. "Modeling of the chemical vapor deposition of YBa₂Cu₃O, TiB₂, and SiC thin films onto continuous ceramic tows." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/36210.

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38

Gulizia, Stefan. "Soldering in high pressure die casting (HPDC) performance evaluation and characterisation of physical vapour deposition (PVD) coatings /." Swinburne Research Bank, 2008. http://hdl.handle.net/1959.3/39640.

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Thesis (MEng) - School of Engineering and Science, Swinburne University of Technology, 2008.
Thesis submitted for the degree of Master of Engineering, School of Engineering and Science, Swinburne University of Technology, 2008. Typescript. Includes bibliographical references (p. 98-101).
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39

Parker, Stephen Christy. "Particle nucleation, growth, and sintering of metallic films on oxide substrates /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/9788.

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40

Bernier, Jeremy Scott. "Evolution and characterization of partially stabilized zirconia (7wt% Y₂O₃) thermal barrier coatings deposited by electron beam physical vapor deposition." Link to electronic thesis, 2001. http://www.wpi.edu/Pubs/ETD/Available/etd-0517102-163444.

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41

Patz, Timothy Matthew. "Laser Processing of Biological Materials." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7451.

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I have explored the use of the matrix assisted pulsed laser evaporation (MAPLE) and MAPLE direct write (MDW) to create thin films of biological materials. MAPLE is a novel physical vapor deposition technique used to deposit thin films of organic materials. The MAPLE process involves the laser desorption of a frozen dilute solution (1-5%) containing the material to be deposited. A focused laser pulse (~200 mJ/cm2) impacts the frozen target, which causes the solvent to preferentially absorb the laser energy and evaporate. The collective action of the evaporated solvent desorbs the polymeric solute material towards the receiving substrate placed parallel and opposite to the target. The bioresorbable polymer PDLLA and the anti-inflammatory pharmaceutical dexamethasone were processed using MAPLE, and characterized using Fourier transform infrared spectroscopy, atomic force microscopy and x-ray photoelectron spectroscopy. MDW is a CAD/CAM controlled direct writing process. The material to be transferred is immersed in a laser-absorbing matrix or solution and coated onto a target or support positioned microns to millimeters away from a receiving substrate. Using a UV microscope objective, a focused laser pulse is directed at the backside of the ribbon, so that the laser energy first interacts with the matrix at the ribbon/matrix interface. This energy is used to gently desorb the depositing material and matrix onto the receiving substrate. I have deposited neuroblasts within a three-dimensional extracellular matrix. These two laser processing techniques have enormous potential for functional medical device and tissue engineering applications.
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42

King, Harry C. III. "Automation of CVI equipment for laminated matrix composite fabrication." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/19509.

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43

Roychoudhury, Rajat. "Growth and characterization of phosphorus doped diamond films : effects of doping, electrical characterization of interfaces and some device applications /." free to MU campus, to others for purchase, 1997. http://wwwlib.umi.com/cr/mo/fullcit?p9841331.

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44

Gannon, Paul Edward. "Study of solid oxide fuel cell interconnects, protective coatings and advanced physical vapor deposition techniques." Diss., Montana State University, 2007. http://etd.lib.montana.edu/etd/2007/gannon/GannonP0507.pdf.

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45

Mukati, Kapil. "An alternative structure for next generation regulatory controllers and scale-up of copper(indium gallium)selenide thin film co-evaporative physical vapor deposition process." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 311 p, 2007. http://proquest.umi.com/pqdweb?did=1397912441&sid=12&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2007.
Principal faculty advisor: Babatunde Ogunnaike, Dept. of Chemical Engineering, and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.
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46

Nowrozi, Mojtaba Faiz. "A systematic study of LPCVD refractory metal/silicide interconnect materials for very large scale integrated circuits." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184396.

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Recently, refractory materials have been proposed as a strong alternative to poly-silicon and aluminum alloys as metallization systems for Very Large Scale Integrated (VLSI) circuits because of their improved performance at smaller Integrated Circuit (IC) feature size and higher interconnect current densities. However, processing and reliability problems associated with the use of refractory materials have limited their widespread acceptance. The hot-wall low pressure chemical vapor deposition (LPCVD) of Molybdenum and Tungsten from their respective hexacarbonyl sources has been studied as a potential remedy to such problems, in addition to providing the potential for higher throughput and better step coverage. Using deposition chemistries based on carbonyl sources, Mo and W deposits have been characterized with respect to their electrical, mechanical, structural, and chemical properties as well as their compatibility with conventional IC processing. Excellent film step coverage and uniformity were obtained by low temperature (300-350 C) deposition at pressures of 400-600 mTorr. As-deposited films were observed to be amorphous, with a resistivity of 250 and 350 microohm-cm for Mo and W respectively. On annealing at high temperatures in a reducing or inert atmosphere, the films crystallize with attendant reduction in resistivity to 9.3 and 12 microohm-cm for Mo and W, respectively. The average grain size also increases as a function of time and temperature to a maximum of 2500-3000 A. The metals and their silicides that are deposited, using silane as silicon source, are integratable to form desired metal-silicide gate contact structures. Thus, use of the low resistivity of the elemental metal coupled with the oxidation resistance of its silicide manifests the quality and economy of the process. MOS capacitors with Mo and W as the gate material have been fabricated on n-type (100) silicon. A work function of 4.7 +/- 0.1 eV was measured by means of MOS capacitance-voltage techniques. The experimental results further indicate that the characteristics of W-gate MOS devices related to the charges in SiO₂ are comparable to those of poly-silicon; while, the resistivity is about two orders of magnitude lower than poly-silicon. It is therefore concluded that hot-wall low pressure chemical vapor deposition of Mo and W from their respective carbonyl sources is a viable technique for the deposition of reliable, high performance refractory metal/silicide contact and interconnect structures on very large scale integrated circuits.
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47

Culler, Adam J. "Design of a fiber coating system for physical vapor deposition." Ohio : Ohio University, 2001. http://www.ohiolink.edu/etd/view.cgi?ohiou1173811489.

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48

Donev, Jason Matthew Kaiser. "Non-contact atomic force microscopy studies of amorphous solid water deposited on Au(111) /." Thesis, Connect to this title online; UW restricted, 2003. http://hdl.handle.net/1773/9779.

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49

Sutcliffe, Ronald David. "Aluminum and Copper Chemical Vapor Deposition on Fluoropolymer Dielectrics and Subsequent Interfacial Interactions." Thesis, University of North Texas, 1997. https://digital.library.unt.edu/ark:/67531/metadc279304/.

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50

Appiah, Kwadwo Ampofo. "Microstructural and microanalytical characterization of laminated (C-SiC) matrix composites fabricated by forced-flow thermal-gradient chemical vapor infiltration (FCVI)." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14910.

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