Journal articles on the topic 'Vapor degreasing'

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1

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 98, no. 1 (January 2000): 154–60. http://dx.doi.org/10.1016/s0026-0576(00)80321-9.

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2

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 99 (January 2001): 157–62. http://dx.doi.org/10.1016/s0026-0576(01)85273-9.

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3

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 100 (January 2002): 148–53. http://dx.doi.org/10.1016/s0026-0576(02)82015-3.

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4

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 97, no. 1 (January 1999): 154–60. http://dx.doi.org/10.1016/s0026-0576(00)83072-x.

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5

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 97, no. 1 (January 1999): 156–64. http://dx.doi.org/10.1016/s0026-0576(99)80014-2.

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6

Scapelliti, Joseph. "Enclosed vapor degreasing systems." Metal Finishing 93, no. 1 (January 1995): 144–51. http://dx.doi.org/10.1016/0026-0576(95)93360-e.

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7

Mertens, James A. "Vapor Degreasing with Chlorinated Solvents." Metal Finishing 98, no. 6 (January 2000): 43–51. http://dx.doi.org/10.1016/s0026-0576(00)80390-6.

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8

Murphy, Brian L. "Vapor degreasing with chlorinated solvents." Environmental Forensics 17, no. 4 (October 2016): 282–93. http://dx.doi.org/10.1080/15275922.2016.1230907.

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9

Mertens, James A. "Vapor degreasing with chlorinated solvents." Metal Finishing 108, no. 11-12 (December 2010): 23–32. http://dx.doi.org/10.1016/s0026-0576(10)00039-5.

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10

Mertens, James A. "Vapor degreasing with chlorinated solvents." Metal Finishing 97, no. 5 (January 1999): 56–64. http://dx.doi.org/10.1016/s0026-0576(99)80759-4.

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11

Ulander, Arne, Anders Seldén, and Gunnar Ahlborg. "ASSESSMENT OF INTERMITTENT TRICHLOROETHYLENE EXPOSURE IN VAPOR DEGREASING." American Industrial Hygiene Association Journal 53, no. 11 (November 1992): 742–43. http://dx.doi.org/10.1080/15298669291360454.

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12

García, Teresa, Rocío García-Aboal, Josep Albero, Pedro Atienzar, and Hermenegildo García. "Vapor-Phase Photocatalytic Overall Water Splitting Using Hybrid Methylammonium Copper and Lead Perovskites." Nanomaterials 10, no. 5 (May 18, 2020): 960. http://dx.doi.org/10.3390/nano10050960.

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Films or powders of hybrid methylammonium copper halide perovskite exhibit photocatalytic activity for overall water splitting in the vapor phase in the absence of any sacrificial agent, resulting in the generation of H2 and O2, reaching a maximum production rate of 6 μmol H2 × g cat−1h−1 efficiency. The photocatalytic activity depends on the composition, degreasing all inorganic Cs2CuCl2Br2 perovskite and other Cl/Br proportions in the methylammonium hybrids. XRD indicates that MA2CuCl2Br2 is stable under irradiation conditions in agreement with the linear H2 production with the irradiation time. Similar to copper analogue, hybrid methylammonium lead halide perovskites also promote the overall photocatalytic water splitting, but with four times less efficiency than the Cu analogues. The present results show that, although moisture is strongly detrimental to the photovoltaic applications of hybrid perovskites, it is still possible to use these materials as photocatalysts for processes requiring moisture due to the lack of relevance in the photocatalytic processes of interparticle charge migration.
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13

Hanley, Kevin William, Martin R. Petersen, Kenneth L. Cheever, and Lian Luo. "Bromide and N-acetyl-S-(n-propyl)-l-cysteine in urine from workers exposed to 1-bromopropane solvents from vapor degreasing or adhesive manufacturing." International Archives of Occupational and Environmental Health 83, no. 5 (March 14, 2010): 571–84. http://dx.doi.org/10.1007/s00420-010-0524-4.

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14

Brown, Marianne Parker. "Worker Risk Mapping: An Education-for-Action Approach." NEW SOLUTIONS: A Journal of Environmental and Occupational Health Policy 5, no. 2 (August 1995): 22–27. http://dx.doi.org/10.2190/ns5.2.e.

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The workers, all from the same shop, gather around a large sheet of paper taped to the wall. One of them is sketching the shop's floor plan and marking where certain health and safety hazards are. The other workers are giving her guidance — “Don't forget the vapors from the degreasing tanks,” “Remember the oily spot on the floor the custodians always miss,” “There's the noise from the punch press.” Later, they will decide where they want to start to make changes in their workplace.
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15

Stemmer, David, and Odi Kehagias. "Bone Degreasing – Finding a New Solution to an Old Problem." Biodiversity Information Science and Standards 2 (June 13, 2018): e26392. http://dx.doi.org/10.3897/biss.2.26392.

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The South Australian Museum boasts the largest and most comprehensive cetacean collection in Australia, including various large cetacean skeletons. The preparation of these skeletons was done at various locations throughout the history of the Museum until the state government funded a purpose-built preparation facility which opened in 1983. The well-equipped centre was fitted with a large (2800 L) custom-built liquid-vapour degreaser that used trichloroethylene (TCE) as solvent. Many beautifully degreased skeletons, including a 22 m pygmy blue whale, were prepared during its 15-year operation. An accidental spill of TCE in 1999 led to the decommissioning of the unit. The decision to abandon the use of the toxic and dangerous TCE has led to a series of experiments to find a benign replacement process that will work either with the existing degreaser or heated maceration vats. Numerous chemicals and treatment methods have been trialled with limited success. However, one particular group of chemicals, glycol ether surfactant compounds, has shown promise and has been the main focus for our ongoing studies. Glycol ethers are broad-spectrum active solvents characterised by high dilution ratios, low evaporation rates and wide solubility range. Their unique solubility characteristics also allow them to be used as a coupling solvent in more complex situations containing both hydrophilic and hydrophobic components, and because of their compatibility with non-ionic surfactants, blended formulations with glycol ether solvents may provide a new solution to an old problem.
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16

Seldén, Anders, Björn Hultberg, Arne Ulander, and Gunnar Ahlborg. "Trichloroethylene exposure in vapour degreasing and the urinary excretion of N-acetyl-β-d-glucosaminidase." Archives of Toxicology 67, no. 3 (April 1993): 224–26. http://dx.doi.org/10.1007/bf01973312.

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17

Ravi, Srivathsan, Karthick Venkatesh Ganesh, Arunachalam Ramanathan, Jegan Annamalai, and Prasanna Kumar Jaiswal. "Development of Nano Crystalline Nickel Coating for Engineering Applications." Key Engineering Materials 443 (June 2010): 487–92. http://dx.doi.org/10.4028/www.scientific.net/kem.443.487.

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The current research focuses on developing nano-crystalline nickel coating for engineering applications through pulse plating technique. Based on the literature survey, the current density, duty cycle and frequency were identified as important grain refining parameters. Coating was done over a mild steel sample after mechanical polishing, vapour degreasing and anodizing. Experiments were conducted using the three determining parameters and their influence on the properties of the coating was evaluated. Coatings were then characterized for the surface morphology and hardness. The XRD analysis for the surface morphology resulted in the grain size of 19 nm and the hardness measured from the microhardness tester was 677 HV which is higher than the hardness reported in the available literatures. The influence of the pulse plating parameters on the grain size and hardness of the coating has been listed out for the benefit of the scientific community.
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18

TAKEUCHI, Setuzo. "What vapour degreasing should be from now? In the face of curtailment or abolition in frons (CFC) and other solvents." Journal of the Surface Finishing Society of Japan 41, no. 2 (1990): 86–90. http://dx.doi.org/10.4139/sfj.41.86.

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19

"Vapor degreasing systems." Metal Finishing 97, no. 12 (December 1999): 60–61. http://dx.doi.org/10.1016/s0026-0576(00)81165-4.

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20

"Vapor degreasing method." Metal Finishing 98, no. 2 (February 2000): 117. http://dx.doi.org/10.1016/s0026-0576(00)81453-1.

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21

"Vapor degreasing system." Metal Finishing 99, no. 10 (October 2001): 100. http://dx.doi.org/10.1016/s0026-0576(01)82073-0.

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22

"Vapor degreasing system." Metal Finishing 94, no. 8 (August 1996): 86–87. http://dx.doi.org/10.1016/s0026-0576(96)97939-8.

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23

"Vapor degreasing apparatus." Metal Finishing 95, no. 2 (February 1997): 114. http://dx.doi.org/10.1016/s0026-0576(97)81852-1.

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24

"Vapor degreasing method." Metal Finishing 96, no. 8 (August 1998): 78. http://dx.doi.org/10.1016/s0026-0576(98)80679-x.

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25

"Refrigerated vapor degreasing system." Metal Finishing 97, no. 11 (November 1999): 88–89. http://dx.doi.org/10.1016/s0026-0576(00)82232-1.

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26

"Vapor degreasing and cleaning solvent." Metal Finishing 95, no. 9 (September 1997): 94. http://dx.doi.org/10.1016/s0026-0576(97)85883-7.

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27

"Evaluation of COSHH Essentials for Vapor Degreasing and Bag Filling Operations." Annals of Occupational Hygiene, September 19, 2005. http://dx.doi.org/10.1093/annhyg/mei053.

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28

Banerjee, S., A. Tasch, T. Hsu, R. Qian, D. Kinosky, J. Irby, A. Mahajan, and S. Thomas. "In Situ Low Temperature Cleaning and Passivation of Silicon by Remote Hydrogen Plasma for Silicon-Based Epitaxy." MRS Proceedings 259 (1992). http://dx.doi.org/10.1557/proc-259-43.

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ABSTRACTRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD), which involves nonthermal, remote plasma excitation of precursors, has been demonstrated to be a novel and attractive technique for low temperature (150-450C) Si and Sil-xGex epitaxy for applications in Si ULSI and novel Si heterostructure devices which require compact doping profiles and/or heterointerfaces. An in situ low temperature remote hydrogen plasma clean in the Ultra-High Vacuum (UHV) deposition chamber in order to achieve a chemically passive, hydrogenated Si surface with minimal O, C and N contamination, is a critical component of the process. The ex situ wet chemical cleaning consists of ultrasonic degreasing and a modified RCA clean, followed by a final dilute HF dip. The in situ clean is achieved by remote plasma excited H, where H introduced through the plasma column is r-f excited such that the plasma glow does not engulf the wafer. In situ AES analysis shows that the remote H plasma clean results in very substantial reduction of the C, O and N contamination on the Si surface. We believe that the H plasma produces atomic H which, in turn, produces a reducing environment and has a slight etching effect on Si and SiO2 by converting them to volatile byproducts. TEM analysis of the wafers subjected to this clean indicate that defect-free surfaces with dislocation loop densities below TEM detection limits of 105 /cm2 are achievable. Corroborating evidence of achieving an atomically clean, smooth Si surface by remote H plasma clean as obtained from in situ RHEED analysis will also be presented. After in situ H cleaning at low pressures (45 mTorr), typically for 30 min. at a substrate temperature of 310 C, we observe both stronger integral order streaks compared to the as-loaded sample and the appearance of less intense half-order lines indicative of a (2 × 1) reconstruction pattern, indicating a monohydride termination. A (3 × 1) reconstruction pattern is observed upon H plasma clean at lower temperatures (250 C), which can be attributed to an alternating monohydride and dihydride termination. Results of air exposure of hydrogenated Si surfaces by AES analysis indicate that the (3 × l) termination is chemically more inert towards readsorption of C and 0. Successful Si homoepitaxy and Si/Sil-xGex heteroepitaxy under a variety of surface cleaning conditions prove that by a combination of these cleaning techniques, and by exploiting the inertness of the H-passivated Si surface, very low defect density films with 0 and C levels as low as 1X1018 cm−3 and 5×1017 cm−3, respectively, can be achieved.
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29

"Evaluation of COSHH Essentials for Vapour Degreasing and Bag-Filling Operations." Annals of Occupational Hygiene, August 2006. http://dx.doi.org/10.1093/annhyg/mel045.

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