Journal articles: 'Van der Waals Heterostructures van der Waals heterostructures'

1

Tang, Hongyu, and Giulia Tagliabue. "Tunable photoconductive devices based on graphene/WSe₂ heterostructures." EPJ Web of Conferences 266 (2022): 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

Full text

Abstract:

Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was observed in the graphene/WSe2 heterostructures. The tunable photoconductive behaviors provide promising potential applications of van der Waals heterostructures in optoelectronics. This work has guiding significance for the realization of stacking engineering in van der Waals heterostructures.

APA, Harvard, Vancouver, ISO, and other styles

2

Xiang, Rong, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yang Qian, Yuta Sato, Ming Liu, et al. "One-dimensional van der Waals heterostructures." Science 367, no. 6477 (January 30, 2020): 537–42. http://dx.doi.org/10.1126/science.aaz2570.

Full text

Abstract:

We present the experimental synthesis of one-dimensional (1D) van der Waals heterostructures, a class of materials where different atomic layers are coaxially stacked. We demonstrate the growth of single-crystal layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS2) crystals on single-walled carbon nanotubes (SWCNTs). For the latter, larger-diameter nanotubes that overcome strain effect were more readily synthesized. We also report a 5-nanometer–diameter heterostructure consisting of an inner SWCNT, a middle three-layer BN nanotube, and an outer MoS2 nanotube. Electron diffraction verifies that all shells in the heterostructures are single crystals. This work suggests that all of the materials in the current 2D library could be rolled into their 1D counterparts and a plethora of function-designable 1D heterostructures could be realized.

APA, Harvard, Vancouver, ISO, and other styles

3

Rakib, Tawfiqur, Pascal Pochet, Elif Ertekin, and Harley T. Johnson. "Moiré engineering in van der Waals heterostructures." Journal of Applied Physics 132, no. 12 (September 28, 2022): 120901. http://dx.doi.org/10.1063/5.0105405.

Full text

Abstract:

Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

APA, Harvard, Vancouver, ISO, and other styles

4

Geim, A. K., and I. V. Grigorieva. "Van der Waals heterostructures." Nature 499, no. 7459 (July 2013): 419–25. http://dx.doi.org/10.1038/nature12385.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Wu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang, et al. "The fabrication and physical properties of two-dimensional van der Waals heterostructures." Acta Physica Sinica 71, no. 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.

Full text

Abstract:

Two-dimensional van der Waals materials (2D materials for short) have developed into a novel material family that has attracted much attention, and thus the integration, performance and application of 2D van der Waals heterostructures has been one of the research hotspots in the field of condensed matter physics and materials science. The 2D van der Waals heterostructures provide a flexible and extensive platform for exploring diverse physical effects and novel physical phenomena, as well as for constructing novel spintronic devices. In this topical review article, starting with the transfer technology of 2D materials, we will introduce the construction, performance and application of 2D van der Waals heterostructures. Firstly, the preparation technology of 2D van der Waals heterostructures in detail will be presented according to the two classifications of wet transfer and dry transfer, including general equipment for transfer technology, the detailed steps of widely used transfer methods, a three-dimensional manipulating method for 2D materials, and hetero-interface cleaning methods. Then, we will introduce the performance and application of 2D van der Waals heterostructures, with a focus on 2D magnetic van der Waals heterostructures and their applications in the field of 2D van der Waals magnetic tunnel junctions and moiré superlattices. The development and optimization of 2D materials transfer technology will boost 2D van der Waals heterostructures to achieve breakthrough results in fundamental science research and practical application.

APA, Harvard, Vancouver, ISO, and other styles

6

Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (December 13, 2022): 8921. http://dx.doi.org/10.3390/ma15248921.

Full text

Abstract:

One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.

APA, Harvard, Vancouver, ISO, and other styles

7

Albarakati, Sultan, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, et al. "Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures." Science Advances 5, no. 7 (July 2019): eaaw0409. http://dx.doi.org/10.1126/sciadv.aaw0409.

Full text

Abstract:

With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

APA, Harvard, Vancouver, ISO, and other styles

8

Martanov, Sergey G., Natalia K. Zhurbina, Mikhail V. Pugachev, Aliaksandr I. Duleba, Mark A. Akmaev, Vasilii V. Belykh, and Aleksandr Y. Kuntsevich. "Making van der Waals Heterostructures Assembly Accessible to Everyone." Nanomaterials 10, no. 11 (November 21, 2020): 2305. http://dx.doi.org/10.3390/nano10112305.

Full text

Abstract:

Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, probe stations or are home-made. For many laboratories it is vital to build a simple, convenient and universal transfer machine. In this paper we discuss the guiding principles for the design of such a machine, review the existing machines and demonstrate our own construction, that is powerful and fast-in-operation. All components of this machine are extremely cheap and can be easily purchased using common online retail services. Moreover, assembling a heterostructure out of exfoliated commercially available hexagonal boron nitride and tungsten diselenide crystals with a pick-up technique and using the microphotolumenescence spectra, we show well-resolved exciton and trion lines, as a results of disorder suppression in WSe2 monolayer. Our results thus show that technology of the two-dimensional materials and heterostructures becomes accessible to anyone.

APA, Harvard, Vancouver, ISO, and other styles

9

Villalva, Julia, Sara Moreno-Da Silva, Palmira Villa, Luisa Ruiz-González, Cristina Navío, Saül Garcia-Orrit, Víctor Vega-Mayoral, et al. "Covalent modification of franckeite with maleimides: connecting molecules and van der Waals heterostructures." Nanoscale Horizons 6, no. 7 (2021): 551–58. http://dx.doi.org/10.1039/d1nh00147g.

Full text

Abstract:

We show that thiol–ene-like “click” chemistry can be used to decorate franckeite, a naturally occurring van der Waals heterostructure with maleimide reagents. In this way, we provide a pathway towards 2D–2D–0D mixed-dimensional heterostructures.

APA, Harvard, Vancouver, ISO, and other styles

10

Degaga, Gemechis D., Sumandeep Kaur, Ravindra Pandey, and John A. Jaszczak. "First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite." Materials 14, no. 7 (March 27, 2021): 1649. http://dx.doi.org/10.3390/ma14071649.

Full text

Abstract:

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

APA, Harvard, Vancouver, ISO, and other styles

11

Slepchenkov, Michael M., Dmitry A. Kolosov, and Olga E. Glukhova. "Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study." Materials 15, no. 12 (June 8, 2022): 4084. http://dx.doi.org/10.3390/ma15124084.

Full text

Abstract:

At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.

APA, Harvard, Vancouver, ISO, and other styles

12

Jariwala, Deep, Tobin J. Marks, and Mark C. Hersam. "Mixed-dimensional van der Waals heterostructures." Nature Materials 16, no. 2 (August 1, 2016): 170–81. http://dx.doi.org/10.1038/nmat4703.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Furchi, Marco M., Armin A. Zechmeister, Florian Hoeller, Stefan Wachter, Andreas Pospischil, and Thomas Mueller. "Photovoltaics in Van der Waals Heterostructures." IEEE Journal of Selected Topics in Quantum Electronics 23, no. 1 (January 2017): 106–16. http://dx.doi.org/10.1109/jstqe.2016.2582318.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Ma, Zechen, Ruifeng Li, Rui Xiong, Yinggan Zhang, Chao Xu, Cuilian Wen, and Baisheng Sa. "InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening." Materials 14, no. 14 (July 6, 2021): 3768. http://dx.doi.org/10.3390/ma14143768.

Full text

Abstract:

Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way.

APA, Harvard, Vancouver, ISO, and other styles

15

Wang, Han Yu, and An Ping Huang. "Progress in Graphene-Based Two-Dimensional Heterostructures and their Photoelectric Properties." Applied Mechanics and Materials 733 (February 2015): 231–35. http://dx.doi.org/10.4028/www.scientific.net/amm.733.231.

Full text

Abstract:

The zero-gap and low absorption in visible light spectrum has limited the potential of graphene potential in photoelectric applications. Two-dimensional (2D) heterostructures have grown up in recent years showing attractive prospects in making new materials with designed properties, and become a promising way to modulate properties of graphene. Recent research progress in 2D heterostructures, including the varieties and properties of van der waals and non-van der waals graphene-based 2D heterostructures separately, is reviewed in this paper. Then the photoelectric applications of graphene-based 2D heterostructures are summarized.

APA, Harvard, Vancouver, ISO, and other styles

16

Haley, Kristine L., Jeffrey A. Cloninger, Kayla Cerminara, Randy M. Sterbentz, Takashi Taniguchi, Kenji Watanabe, and Joshua O. Island. "Heated Assembly and Transfer of Van der Waals Heterostructures with Common Nail Polish." Nanomanufacturing 1, no. 1 (June 15, 2021): 49–56. http://dx.doi.org/10.3390/nanomanufacturing1010005.

Full text

Abstract:

Recent advances in the manipulation and control of layered, two-dimensional materials has given way to the construction of heterostructures with new functionality and unprecedented electronic properties. In this study, we present a simple technique to assemble and transfer van der Waals heterostructures using common nail polish. Commercially available nail polish acts as a resilient sticky polymer, allowing for the fabrication of complex multi-material stacks without noticeable fatigue. Directly comparing four commercially available brands of nail polish, we find that one stands out in terms of stability and stacking characteristics. Using this method, we fabricate two top-gated devices and report their electrical properties. Our technique reduces the complexity in assembling van der Waals heterostructures based on the proven van der Waals pick up method.

APA, Harvard, Vancouver, ISO, and other styles

17

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (April 28, 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

Full text

Abstract:

Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

APA, Harvard, Vancouver, ISO, and other styles

18

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (April 28, 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

Full text

Abstract:

Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

APA, Harvard, Vancouver, ISO, and other styles

19

Wu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.

Full text

Abstract:

The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.

APA, Harvard, Vancouver, ISO, and other styles

20

Vermeulen, Paul A., Jefta Mulder, Jamo Momand, and Bart J. Kooi. "Strain engineering of van der Waals heterostructures." Nanoscale 10, no. 3 (2018): 1474–80. http://dx.doi.org/10.1039/c7nr07607j.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.

Full text

Abstract:

The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).

APA, Harvard, Vancouver, ISO, and other styles

22

Goswami, P., and U. P. Tyagi. "Graphene-TMD Van der Waals Heterostucture Plasmonics." Journal of Scientific Research 12, no. 2 (February 1, 2020): 169–74. http://dx.doi.org/10.3329/jsr.v12i2.43685.

Full text

Abstract:

The collective excitations of electrons in the bulk or at the surface, viz. plasmons, play an important role in the properties of materials, and have generated the field of “plasmonics”. We report the observation of a highly unusual plasmon mode on the surface of Van der Waals heterostructures (vdWHs) of graphene monolayer on 2D transition metal dichalcogenide (Gr-TMD) substrate. Since the exponentially decaying fields of surface plasmon wave propagating along interface is highly sensitive to the ambient refractive index variations, such heterostructures are useful for ultra-sensitive bio-sensing.

APA, Harvard, Vancouver, ISO, and other styles

23

Wu, Jiazhen, Fucai Liu, Masato Sasase, Koichiro Ienaga, Yukiko Obata, Ryu Yukawa, Koji Horiba, et al. "Natural van der Waals heterostructural single crystals with both magnetic and topological properties." Science Advances 5, no. 11 (November 2019): eaax9989. http://dx.doi.org/10.1126/sciadv.aax9989.

Full text

Abstract:

Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

APA, Harvard, Vancouver, ISO, and other styles

24

Song, Tiancheng, Xinghan Cai, Matisse Wei-Yuan Tu, Xiaoou Zhang, Bevin Huang, Nathan P. Wilson, Kyle L. Seyler, et al. "Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures." Science 360, no. 6394 (May 3, 2018): 1214–18. http://dx.doi.org/10.1126/science.aar4851.

Full text

Abstract:

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

25

Yang, Xun, Chong-Xin Shan, Pei-Nan Ni, Ming-Ming Jiang, An-Qi Chen, Hai Zhu, Jin-Hao Zang, Ying-Jie Lu, and De-Zhen Shen. "Electrically driven lasers from van der Waals heterostructures." Nanoscale 10, no. 20 (2018): 9602–7. http://dx.doi.org/10.1039/c8nr01037d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Shukla, Ayushi, and Pooja Srivastava. "Van der Waals Heterostructures for device Applications." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 13, no. 01 (June 30, 2021): 48–52. http://dx.doi.org/10.18090/samriddhi.v13i01.9.

Full text

Abstract:

Advent of two-dimensional (2D) materials owing to their extraordinary properties can revolutionize the field of nano-electronics. Experimental advancements have now made it possible to stack different 2D layers on top of each other to form a single system. Due to van der Waals bonding between the layers, the properties of each layer are not perturbed much. It helps in generating new functionalities for nano-electronics applications. The present paper focuses on the application of van der Waals heterostructure.

APA, Harvard, Vancouver, ISO, and other styles

27

Li, Jie, Lin Du, Jing Huang, Yuan He, Jun Yi, Lili Miao, Chujun Zhao, and Shuangchun Wen. "Passive photonic diodes based on natural van der Waals heterostructures." Nanophotonics 10, no. 2 (November 9, 2020): 927–35. http://dx.doi.org/10.1515/nanoph-2020-0442.

Full text

Abstract:

AbstractVan der Waals heterostructures are composed of stacked atomically thin two-dimensional (2D) crystals to provide unprecedented functionalities and novel physics. Franckeite, a naturally occurring van der Waals heterostructure consisting of superimposed SnS2-like and PbS-like layers alternately, shows intriguing potential in versatile optoelectronic applications. Here, we have prepared the few-layer franckeite via liquid-phase exfoliation method and characterized its third-order nonlinearity and ultrafast dynamics experimentally. We have found that the layered franckeite shows low saturable intensity, large modulation depth and picosecond ultrafast response. We have designed the passive photonic diodes based on the layered franckeite/C60 cascaded film and suspension configuration and found that the passive photonic diodes exhibit stable nonreciprocal transmission of light. The experimental results show the excellent nonlinear optical performance and ultrafast response of the layered franckeite, which may make inroad for the cost effective and reliable high-performance optoelectronic devices.

APA, Harvard, Vancouver, ISO, and other styles

28

Peimyoo, N., M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou, et al. "Laser-writable high-k dielectric for van der Waals nanoelectronics." Science Advances 5, no. 1 (January 2019): eaau0906. http://dx.doi.org/10.1126/sciadv.aau0906.

Full text

Abstract:

Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-koxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-koxide within various van der Waals devices without degrading the properties of the neighboring two-dimensional materials. This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. Furthermore, upon dielectric breakdown, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching memories. This nondestructive embedding of a high-koxide within complex van der Waals heterostructures could play an important role in future flexible multifunctional van der Waals devices.

APA, Harvard, Vancouver, ISO, and other styles

29

You, Siwen, Xiao Guo, Junjie Jiang, Dingbang Yang, Mingjun Li, Fangping Ouyang, Haipeng Xie, Han Huang, and Yongli Gao. "Temperature−Dependent Raman Scattering Investigation on vdW Epitaxial PbI2/CrOCl Heterostructure." Crystals 13, no. 1 (January 6, 2023): 104. http://dx.doi.org/10.3390/cryst13010104.

Full text

Abstract:

Van der Waals (vdW) epitaxial growth provides an efficient strategy to prepare heterostructures with atomically and electronically sharp interfaces. Herein, PbI2 was in situ thermally deposited onto exfoliated thin−layered CrOCl nanoflakes in high vacuum to fabricate vdW PbI2/CrOCl heterostructures. Optical microscopy, atomic force microscopy, X−ray diffraction, and temperature−dependent Raman spectroscopy were used to investigate the structural properties and phonon behaviors of the heterostructures. The morphology of PbI2 films on the CrOCl substrate obviously depended on the substrate temperature, changing from hemispherical granules to 2D nanoflakes with flat top surfaces. In addition, anomalous blueshift of the Ag1 and Au2 modes as the temperature increased in PbI2/CrOCl heterostructure was observed for the first time. Our results provide a novel material platform for the vdW heterostructure and a possible method for optimizing heterostructure growth behaviors.

APA, Harvard, Vancouver, ISO, and other styles

30

Sutter, Peter, and Eli Sutter. "Unconventional van der Waals heterostructures beyond stacking." iScience 24, no. 9 (September 2021): 103050. http://dx.doi.org/10.1016/j.isci.2021.103050.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Massicotte, M., P. Schmidt, F. Vialla, K. G. Schädler, A. Reserbat-Plantey, K. Watanabe, T. Taniguchi, K. J. Tielrooij, and F. H. L. Koppens. "Picosecond photoresponse in van der Waals heterostructures." Nature Nanotechnology 11, no. 1 (October 5, 2015): 42–46. http://dx.doi.org/10.1038/nnano.2015.227.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Huang, Mingqiang, Shengman Li, Zhenfeng Zhang, Xiong Xiong, Xuefei Li, and Yanqing Wu. "Multifunctional high-performance van der Waals heterostructures." Nature Nanotechnology 12, no. 12 (October 9, 2017): 1148–54. http://dx.doi.org/10.1038/nnano.2017.208.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Jin, Chenhao, Eric Yue Ma, Ouri Karni, Emma C. Regan, Feng Wang, and Tony F. Heinz. "Ultrafast dynamics in van der Waals heterostructures." Nature Nanotechnology 13, no. 11 (November 2018): 994–1003. http://dx.doi.org/10.1038/s41565-018-0298-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Svatek, S. A., G. W. Mudd, Z. R. Kudrynskyi, O. Makarovsky, Z. D. Kovalyuk, C. J. Mellor, L. Eaves, P. H. Beton, and A. Patanè. "Graphene-InSe-graphene van der Waals heterostructures." Journal of Physics: Conference Series 647 (October 13, 2015): 012001. http://dx.doi.org/10.1088/1742-6596/647/1/012001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Gandi, Appala Naidu, Husam N. Alshareef, and Udo Schwingenschlögl. "Thermal response in van der Waals heterostructures." Journal of Physics: Condensed Matter 29, no. 3 (November 21, 2016): 035504. http://dx.doi.org/10.1088/1361-648x/29/3/035504.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Novoselov, K. S., A. Mishchenko, A. Carvalho, and A. H. Castro Neto. "2D materials and van der Waals heterostructures." Science 353, no. 6298 (July 28, 2016): aac9439. http://dx.doi.org/10.1126/science.aac9439.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Andersen, Kirsten, Simone Latini, and Kristian S. Thygesen. "Dielectric Genome of van der Waals Heterostructures." Nano Letters 15, no. 7 (June 12, 2015): 4616–21. http://dx.doi.org/10.1021/acs.nanolett.5b01251.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Ray, Kyle, Alexander E. Yore, Tong Mou, Sauraj Jha, Kirby K. H. Smithe, Bin Wang, Eric Pop, and A. K. M. Newaz. "Photoresponse of Natural van der Waals Heterostructures." ACS Nano 11, no. 6 (May 16, 2017): 6024–30. http://dx.doi.org/10.1021/acsnano.7b01918.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Liu, Lixin, and Tianyou Zhai. "Wafer‐scale vertical van der Waals heterostructures." InfoMat 3, no. 1 (December 2020): 3–21. http://dx.doi.org/10.1002/inf2.12164.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Su, Bao‐Wang, Xi‐Lin Zhang, Bin‐Wei Yao, Hao‐Wei Guo, De‐Kang Li, Xu‐Dong Chen, Zhi‐Bo Liu, and Jian‐Guo Tian. "Laser Writable Multifunctional van der Waals Heterostructures." Small 16, no. 50 (November 23, 2020): 2003593. http://dx.doi.org/10.1002/smll.202003593.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Z. Costa, Viviane, Bryce Baker, Hon-Loen Sinn, Addison Miller, K. Watanabe, T. Taniguchi, and Akm Newaz. "Observation of photoluminescence from a natural van der Waals heterostructure." Applied Physics Letters 120, no. 25 (June 20, 2022): 253101. http://dx.doi.org/10.1063/5.0089439.

Full text

Abstract:

van der Waals heterostructures comprised of two-dimensional (2D) materials offer a platform to obtain materials by design with unique electronic properties. Franckeite (Fr) is a naturally occurring van der Waals heterostructure comprised of two distinct alternately stacked semiconducting layers: (i) SnS2 layer and (ii) Pb3SbS4. Though both layers in the heterostructure are semiconductors, the photoluminescence from Franckeite remains elusive. Here, we report the observation of photoluminescence (PL) from Franckeite. We observed two PL peaks at ∼1.97 and ∼2.12 eV at 1.5 K. By varying the temperature from 1.5 to 280 K, we found that the PL peak position blueshifts and the integrated intensity decreases slowly as we increase the temperature. We observed linear dependence of photoluminescence integrated intensity on excitation laser power, indicating that the photoluminescence is originating from free excitons in the SnS2 layer of Fr. By comparing the PL from Fr with the PL from a monolayer MoS2, we determined that the PL quantum efficiency from Fr is an order of magnitude lower than that of a monolayer MoS2. Our study provides a fundamental understanding of the optical behavior in a complex naturally occurring van der Waals heterostructure and may pave an avenue toward developing nanoscale optical and optoelectronic devices with tailored properties.

APA, Harvard, Vancouver, ISO, and other styles

42

El-Sayed, Marwa A., Andrey P. Tselin, Georgy A. Ermolaev, Mikhail K. Tatmyshevskiy, Aleksandr S. Slavich, Dmitry I. Yakubovsky, Sergey M. Novikov, Andrey A. Vyshnevyy, Aleksey V. Arsenin, and Valentyn S. Volkov. "Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures." Nanomaterials 12, no. 24 (December 13, 2022): 4436. http://dx.doi.org/10.3390/nano12244436.

Full text

Abstract:

Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.

APA, Harvard, Vancouver, ISO, and other styles

43

Li, Jing, Wenhan Zhou, Lili Xu, Yaxin Huang, Shengli Zhang, and Haibo Zeng. "Recent progress on the interfacial regulation and application of 2D antimonene-based van der Waals heterostructures." Applied Physics Letters 121, no. 10 (September 5, 2022): 100501. http://dx.doi.org/10.1063/5.0103000.

Full text

Abstract:

Two-dimensional (2D) antimonene has triggered a wide range of interest owing to its unique structure and physical properties. Van der Waals heterostructures, which integrate two or more different materials with weak interactions between the layers, offer more degrees of freedom for designing functional materials. Very recently, 2D antimonene-based van der Waals heterostructures have inspired extensive research enthusiasm in various fields. Here, we systematically summarize the band alignment types and regulation strategies of interfacial properties for 2D antimonene-based heterostructures and the state-of-the-art current applications, including electronic and optoelectronic devices, catalysis, energy storage, and the biomedical field. Finally, we discuss the opportunities and challenges and put forward the prospects of 2D antimonene-based heterostructures.

APA, Harvard, Vancouver, ISO, and other styles

44

Fragkos, Sotirios, Panagiotis Pappas, Evgenia Symeonidou, Yerassimos Panayiotatos, and Athanasios Dimoulas. "Magnetic skyrmion manipulation in CrTe₂/WTe₂ 2D van der Waals heterostructure." Applied Physics Letters 120, no. 18 (May 2, 2022): 182402. http://dx.doi.org/10.1063/5.0089999.

Full text

Abstract:

Magnetic skyrmions in two-dimensional van der Waals materials provide an ideal platform to push skyrmion technology to the ultimate atomically thin limit. In this work, we theoretically demonstrate the Dzyaloshinskii–Moriya interaction and the formation of a Néel-type skyrmion lattice at the CrTe2/WTe2 bilayer van der Waals heterostructure. Our calculations suggest a field-controlled Néel-type skyrmion lattice—a ferromagnet transition cycle. In addition, a spin-torque induced by spin-polarized current injection was simulated in order to study the motion of a skyrmion on a racetrack, where an increase in the skyrmion Hall angle is observed at high temperatures. Consequently, this study suggests that generation and annihilation of skyrmions can be achieved with temperature or field control and also manipulate the velocity and the direction of the Néel-type skyrmions through ultra-low current densities and temperature, thus shedding light on the general picture of magnetic skyrmion control and design of two-dimensional van der Waals heterostructures.

APA, Harvard, Vancouver, ISO, and other styles

45

Zhou, Congcong, Xiaodan Li, and Taotao Hu. "Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2." Nanomaterials 10, no. 12 (November 27, 2020): 2358. http://dx.doi.org/10.3390/nano10122358.

Full text

Abstract:

Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has attracted great attention. By using ab initio density functional theory with van der Waals corrections, we theoretically investigated the structural and electronic properties of the heterostructures composed of antimonene and monolayer MoS2. Our results revealed that the Sb/MoS2 hetero-bilayer is an indirect semiconductor with type-II band alignment, which implies the spatial separation of photogenerated electron–hole pairs. Due to the weak van der Waals interlayer interactions between the adjacent sheets of the hetero-bilayer systems, the band structures of isolated antimonene and monolayer MoS2 are preserved. In addition, a tunable band gap in Sb/MoS2 hetero-bilayer can be realized by applying in-plane biaxial compressing/stretching. When antimonene and monolayer MoS2 are stacked into superlattices, the indirect semiconductors turn into direct semiconductors with the decreased band gaps. Our results show that the antimonene-based hybrid structures are good candidate structures for photovoltaic devices.

APA, Harvard, Vancouver, ISO, and other styles

46

Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

Full text

Abstract:

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

APA, Harvard, Vancouver, ISO, and other styles

47

Zheng, Yongjia, Akihito Kumamoto, Kaoru Hisama, Keigo Otsuka, Grace Wickerson, Yuta Sato, Ming Liu, et al. "One-dimensional van der Waals heterostructures: Growth mechanism and handedness correlation revealed by nondestructive TEM." Proceedings of the National Academy of Sciences 118, no. 37 (September 10, 2021): e2107295118. http://dx.doi.org/10.1073/pnas.2107295118.

Full text

Abstract:

We recently synthesized one-dimensional (1D) van der Waals heterostructures in which different atomic layers (e.g., boron nitride or molybdenum disulfide) seamlessly wrap around a single-walled carbon nanotube (SWCNT) and form a coaxial, crystalized heteronanotube. The growth process of 1D heterostructure is unconventional—different crystals need to nucleate on a highly curved surface and extend nanotubes shell by shell—so understanding the formation mechanism is of fundamental research interest. In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD)–synthesized 1D heterostructures. Edge structures, nucleation sites, and crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and nondestructive access to many intrinsic structural details. In particular, we have distinguished different-shaped boron nitride nanotube (BNNT) edges, which are confirmed by electron diffraction at the same location to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between the SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this 1D heterostructure material group but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nanometers) atomic substrates.

APA, Harvard, Vancouver, ISO, and other styles

48

Liu, Zhiyi, Xiaomei Hu, and Mingsheng Long. "High-performances ultraviolet photodetector based on vertical van der Waals heterostructures." Journal of Physics: Conference Series 2383, no. 1 (December 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2383/1/012037.

Full text

Abstract:

High-performance ultraviolet (UV) photodetectors play a very important role in many fields, especially in the military, biomedical and other fields. [1]In recent years, many studies have realized ultraviolet photodetectors of 2D layered materials, overcome the problems of traditional ultraviolet detectors that are large and use high voltages. [1]Up to now, most of these works use atomically thin layers and simple p-n van der Waals (vdW) heterostructures, which have difficulty meeting the conditions of high sensitivity and ultrafast response at the same time. we report the double p-n van der Waals (vdW) heterostructure built on a large electrode. The two p-n junctions connected in parallel were proven to be able to effectively separate photo-generated carriers and suitable for ultraviolet light. This new type of photodetector exhibits competitive performance, including high R up to 254.8 A/W under UV light, and fast photoresponse τr = 7.9 μs and τd = 3.9 μs. These results provide an ideal platform for realizing highly sensitive UV photodetectors.

APA, Harvard, Vancouver, ISO, and other styles

49

Xiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe₂/MoS₂ heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.

Full text

Abstract:

A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.

APA, Harvard, Vancouver, ISO, and other styles

50

Yang, Yaping, Jidong Li, Jun Yin, Shuigang Xu, Ciaran Mullan, Takashi Taniguchi, Kenji Watanabe, Andre K. Geim, Konstantin S. Novoselov, and Artem Mishchenko. "In situ manipulation of van der Waals heterostructures for twistronics." Science Advances 6, no. 49 (December 2020): eabd3655. http://dx.doi.org/10.1126/sciadv.abd3655.

Full text

Abstract:

In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be markedly changed by a moiré pattern induced by twist angles between different layers. This process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here, we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique, we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Van der Waals Heterostructures van der Waals heterostructures'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles