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Academic literature on the topic 'Van der Waals Heterostructures van der Waals heterostructures'

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Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Van der Waals Heterostructures van der Waals heterostructures"

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Tang, Hongyu, and Giulia Tagliabue. "Tunable photoconductive devices based on graphene/WSe2 heterostructures." EPJ Web of Conferences 266 (2022): 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

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Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was observed in the graphene/WSe2 heterostructures. The tunable photoconductive behaviors provide promising potential applications of van der Waals heterostructures in optoelectronics. This work has guiding significance for the realization of stacking engineering in van der Waals heterostructures.
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Xiang, Rong, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yang Qian, Yuta Sato, Ming Liu, et al. "One-dimensional van der Waals heterostructures." Science 367, no. 6477 (January 30, 2020): 537–42. http://dx.doi.org/10.1126/science.aaz2570.

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We present the experimental synthesis of one-dimensional (1D) van der Waals heterostructures, a class of materials where different atomic layers are coaxially stacked. We demonstrate the growth of single-crystal layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS2) crystals on single-walled carbon nanotubes (SWCNTs). For the latter, larger-diameter nanotubes that overcome strain effect were more readily synthesized. We also report a 5-nanometer–diameter heterostructure consisting of an inner SWCNT, a middle three-layer BN nanotube, and an outer MoS2 nanotube. Electron diffraction verifies that all shells in the heterostructures are single crystals. This work suggests that all of the materials in the current 2D library could be rolled into their 1D counterparts and a plethora of function-designable 1D heterostructures could be realized.
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Rakib, Tawfiqur, Pascal Pochet, Elif Ertekin, and Harley T. Johnson. "Moiré engineering in van der Waals heterostructures." Journal of Applied Physics 132, no. 12 (September 28, 2022): 120901. http://dx.doi.org/10.1063/5.0105405.

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Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.
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Geim, A. K., and I. V. Grigorieva. "Van der Waals heterostructures." Nature 499, no. 7459 (July 2013): 419–25. http://dx.doi.org/10.1038/nature12385.

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Wu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang, et al. "The fabrication and physical properties of two-dimensional van der Waals heterostructures." Acta Physica Sinica 71, no. 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.

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Two-dimensional van der Waals materials (2D materials for short) have developed into a novel material family that has attracted much attention, and thus the integration, performance and application of 2D van der Waals heterostructures has been one of the research hotspots in the field of condensed matter physics and materials science. The 2D van der Waals heterostructures provide a flexible and extensive platform for exploring diverse physical effects and novel physical phenomena, as well as for constructing novel spintronic devices. In this topical review article, starting with the transfer technology of 2D materials, we will introduce the construction, performance and application of 2D van der Waals heterostructures. Firstly, the preparation technology of 2D van der Waals heterostructures in detail will be presented according to the two classifications of wet transfer and dry transfer, including general equipment for transfer technology, the detailed steps of widely used transfer methods, a three-dimensional manipulating method for 2D materials, and hetero-interface cleaning methods. Then, we will introduce the performance and application of 2D van der Waals heterostructures, with a focus on 2D magnetic van der Waals heterostructures and their applications in the field of 2D van der Waals magnetic tunnel junctions and moiré superlattices. The development and optimization of 2D materials transfer technology will boost 2D van der Waals heterostructures to achieve breakthrough results in fundamental science research and practical application.
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Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (December 13, 2022): 8921. http://dx.doi.org/10.3390/ma15248921.

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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.
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Albarakati, Sultan, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, et al. "Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures." Science Advances 5, no. 7 (July 2019): eaaw0409. http://dx.doi.org/10.1126/sciadv.aaw0409.

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With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.
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Martanov, Sergey G., Natalia K. Zhurbina, Mikhail V. Pugachev, Aliaksandr I. Duleba, Mark A. Akmaev, Vasilii V. Belykh, and Aleksandr Y. Kuntsevich. "Making van der Waals Heterostructures Assembly Accessible to Everyone." Nanomaterials 10, no. 11 (November 21, 2020): 2305. http://dx.doi.org/10.3390/nano10112305.

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Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, probe stations or are home-made. For many laboratories it is vital to build a simple, convenient and universal transfer machine. In this paper we discuss the guiding principles for the design of such a machine, review the existing machines and demonstrate our own construction, that is powerful and fast-in-operation. All components of this machine are extremely cheap and can be easily purchased using common online retail services. Moreover, assembling a heterostructure out of exfoliated commercially available hexagonal boron nitride and tungsten diselenide crystals with a pick-up technique and using the microphotolumenescence spectra, we show well-resolved exciton and trion lines, as a results of disorder suppression in WSe2 monolayer. Our results thus show that technology of the two-dimensional materials and heterostructures becomes accessible to anyone.
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Villalva, Julia, Sara Moreno-Da Silva, Palmira Villa, Luisa Ruiz-González, Cristina Navío, Saül Garcia-Orrit, Víctor Vega-Mayoral, et al. "Covalent modification of franckeite with maleimides: connecting molecules and van der Waals heterostructures." Nanoscale Horizons 6, no. 7 (2021): 551–58. http://dx.doi.org/10.1039/d1nh00147g.

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We show that thiol–ene-like “click” chemistry can be used to decorate franckeite, a naturally occurring van der Waals heterostructure with maleimide reagents. In this way, we provide a pathway towards 2D–2D–0D mixed-dimensional heterostructures.
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Degaga, Gemechis D., Sumandeep Kaur, Ravindra Pandey, and John A. Jaszczak. "First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite." Materials 14, no. 7 (March 27, 2021): 1649. http://dx.doi.org/10.3390/ma14071649.

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Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.
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Dissertations / Theses on the topic "Van der Waals Heterostructures van der Waals heterostructures"

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Boddison-Chouinard, Justin. "Fabricating van der Waals Heterostructures." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38511.

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The isolation of single layer graphene in 2004 by Geim and Novoselov introduced a method that researchers could extend to other van der Waals materials. Interesting and new properties arise when we reduce a crystal to two dimensions where they are often different from their bulk counterpart. Due to the van der Waals bonding between layers, these single sheets of crystal can be combined and stacked with diferent sheets to create novel materials. With the goal to study the interesting physics associated to these stacks, the focus of this work is on the fabrication and characterization of van der Waals heterostructures. In this work, we first present a brief history of 2D materials, the fabrication of heterostructures, and the various tools used to characterize these materials. We then give a description of the custom-built instrument that was used to assemble various 2D heterostructures followed by the findings associated with the optimization of the cleanliness of the stack's interface and surface. Finally, we discuss the results related to the twisting of adjacent layers of stacked MoS2 and its relation to the interlayer coupling between said layers.
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Mauro, Diego. "Electronic properties of Van der Waals heterostructures." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10565/.

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L’interazione spin-orbita (SOI) nel grafene è attualmente oggetto di intensa ricerca grazie alla recente scoperta di una nuova classe di materiali chiamati isolanti topologici. Questi materiali, la cui esistenza è strettamente legata alla presenza di una forte SOI, sono caratterizzati dall’interessante proprietà di avere un bulk isolante ed allo stesso tempo superfici conduttrici. La scoperta teorica degli isolanti topologici la si deve ad un lavoro nato con l’intento di studiare l’influenza dell’interazione spin-orbita sulle proprietà del grafene. Poichè questa interazione nel grafene è però intrinsecamente troppo piccola, non è mai stato possibile effettuare verifiche sperimentali. Per questa ragione, vari lavori di ricerca hanno recentemente proposto tecniche volte ad aumentare questa interazione. Sebbene alcuni di questi studi abbiano mostrato un effettivo aumento dell’interazione spin-orbita rispetto al piccolo valore intrinseco, sfortunatamente hanno anche evidenziato una consistente riduzione della qualità del grafene. L’obbiettivo che ci si pone in questa tesi è di determinare se sia possibile aumentare l’interazione spin-orbita nel grafene preservandone allo stesso tempo le qualità. La soluzione proposta in questo lavoro si basa sull’utilizzo di due materiali semiconduttori, diselenio di tungsteno WSe2 e solfuro di molibdeno MoS2, utilizzati da substrato su cui sopra verrà posizionato il grafene formando così un’eterostruttura -nota anche di “van der Waal” (vdW)-. Il motivo di questa scelta è dovuto al fatto che questi materiali, appartenenti alla famiglia dei metalli di transizione dicalcogenuri (TMDS), mostrano una struttura reticolare simile a quella del grafene, rendendoli ideali per formare eterostrutture e ancora più importante, presentano una SOI estremamente grande. Sostanzialmente l’idea è quindi di sfruttare questa grande interazione spin-orbita del substrato per indurla nel grafene aumentandone così il suo piccolo valore intrinseco.
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Marsden, Alexander J. "Van der Waals epitaxy in graphene heterostructures." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/77193/.

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Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or for modifying its intrinsic properties. This thesis aims to examine the role of van der Waals epitaxy within these heterostructures. First, the graphene-copper interaction during chemical vapour deposition of graphene is investigated. Graphene is found to grow with a mismatch epitaxy of 8 relative to the [001] direction of the Cu(100) surface, despite a mismatch in symmetry and lattice parameter between two. Further, the electronic structure of both graphene and copper is unchanged by the interaction. This highlights the weak interaction between the two, owing to its van der Waals nature. Functionalised graphene is another important heterostructure, and is intensively studied for both graphene production routes and for altering graphene’s properties. Here, it is the change to the homogeneous graphene surface that makes it interesting for van der Waals epitaxy. The effect of functionalisation of graphene with atomic oxygen and nitrogen is presented next. In both cases, only small amounts of functionalisation ( 5 at%) is sufficient to significantly deteriorate the -band structure of the graphene through localisation. For small amounts of nitrogen functionalisation, and greater amounts of oxygen functionalisation, extended topological defects are formed in the graphene lattice. Unlike epoxide oxygen groups, these disruptions to the pristine graphene are found to be irreversible by annealing. Next, the interaction between graphene and the organic semiconducting molecule vanadyl-phthalocyanine (VOPc) is presented. As a result of the van der Waals nature of the graphene surface, VOPc molecules can form crystals microns in size when deposited onto a substrate with an elevated temperature of 155 C; at ambient temperatures, the crystals are only tens of nanometres across. In contrast, the functionalised graphene oxide surface prevents large crystal growth, even at elevated temperatures, because surface functionalities inhibit molecule diffusion. This highlights the importance of graphene as a substrate for molecular crystal growth, even when the growth is not epitaxial. Finally, the supramolecular assembly of trimesic acid (TMA) and terephthalic acid (TPA) is presented. Despite their chemical similarity they display different behaviour as they transition from monolayers to three-dimensional structures: for TMA, the epitaxial chicken wire structure seen at a monolayer templates up through the layers as molecules stack, until a thickness of 20 nm, when random in-plane orientations appear; on the other hand, TPA forms a brickwork structure at the monolayer, which quickly transitions to fibre-like crystals with a bulk structure for the thin films. However, the TPA orientation is still determined by the epitaxy with the graphene substrate, although this is significantly weaker than for TMA.
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Coy, Diaz Horacio. "Preparation and Characterization of Van der Waals Heterostructures." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6212.

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In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 were prepared and characterized. In the first heterostructure, polycrystalline graphene was synthesized by chemical vapor deposition and transferred on top of MoS2 single crystal. In the second heterostructure, MoTe2 monolayers were deposited on MoS2 by molecular beam epitaxy. Characterization of graphene-MoS2 heterostructures was conducted by spin and angle resolve spectroscopy which showed that the electronic structure of the bulk MoS2 and graphene in this van der Waals heterostructures is modified. For MoS2 underneath the graphene, a band structure renormalization and spin polarization are observed. The band structure of MoS2 is modified because the graphene induces screening which shifts the Г-point ~150 meV to lower binding compared to the sample without graphene. The spin polarization is explained by the dipole arising from band bending which breaks the symmetry at the MoS2 surface. For graphene, the band structure at lower binding energy shows that the Dirac cone remains intact with no significant doping. Instead, away from the Fermi level the formation of several gaps in the pi-band due to hybridization with states from the MoS2 is observed. For the heterostructures made depositing monolayer of MoTe2 on MoS2, the morphology, structure and electronic structure were studied. Two dimensional growth is observed under tellurium rich growth conditions and a substrate temperature of 200 °C but formation of a complete monolayer was not achieved. The obtained MoTe2 monolayer shows a high density of the mirror-twins grain boundaries arranged in a pseudo periodic wagon wheel pattern with a periodicity of ~2.6 nm. These grain boundary are formed due to Te-deficiency during the growth. The defect states from these domain boundary pin the Fermi level in MoTe2 and thus determine the band alignment in the MoTe2-MoS2 heterostructures.
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Ma, Qiong Ph D. Massachusetts Institute of Technology. "Optoelectronics of graphene-based Van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104523.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2016.
Cataloged from PDF version of thesis.
Includes bibliographical references.
Research on van der Waals (vdW) materials (homo- or hetero-) is a rapidly emerging field in condensed matter physics. They are layered structures with strong chemical bonding within layers and relatively weak van der Waals force to combine layers together. This unique layer-bylayer nature makes it easy to exfoliate layers out and at the same time to re-assemble in arbitrary sequences with different combinations. The versatility, flexibility, and relatively low cost of production make the scientific community enthusiastic about their future. In this thesis, I investigate the fundamental physical processes of light-matter interactions in these layered structures, including graphene, boron nitride, transition metal dichalcogenides and heterostructures formed from these materials. My research involves state-of-the-art nanoscale fabrication and microscale photocurrent spectroscopy and imaging. In Chapter 1, 1 will briefly discuss basic physical properties of the vdW materials involved in this thesis and introduce the main nanofabrication and measurement techniques. Chapter 2-4 are about hot electron dynamics and electron-phonon coupling in intrinsic graphene systems, among which Chapter 2 is focusing on the generation mechanism of the photocurrent at the p-n interface, which is demonstrated to have a photothermoelectric origin. This indicates a weak electron-phonon coupling strength in graphene. Chapter 3 is a direct experimental follow-up of the work in Chapter 2 and reveals the dominant electron-phonon coupling mechanism at different temperature and doping regimes. In Chapter 4, I present the observation of anomalous geometric photocurrent patterns in various devices at the charge neutral point. The spatial pattern can be understood as a local photo-generated current near edges being collected by remote electrodes. The anomalous behavior as functions of change density and temperature indicates an interesting regime of energy and charge dynamics. In Chapter 5 and 6, 1 will show the photoresponse of graphene-BN heterostuctures. In graphene-BN stack directly on SiO₂, we observed strong photo-induced doping phenomenon, which can be understood as charge transfer from graphene across BN and eventually trapped at the interface between BN and SiO₂. By inserting another layer of graphene between BN and SiO₂ , we can measure an electrical current after photoexcitation due to such charge transfer. We further studied the competition between this vertical charge transfer and in-plane carrier-carrier scattering in different regimes. In Chapter 7, I will briefly summarize collaborated work with Prof. Dimitri Basov's group on near-field imaging of surface polariton in two-dimensional materials. This technique provides a complementary tool to examine the intriguing light-matter interaction (for large momentum excitations) in low-dimensional materials. Chapter 8 is the outlook, from my own point of view, what more can be done following this thesis.
by Qiong Ma.
Ph. D.
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Khestanova, Ekaterina. "Van der Waals heterostructures : fabrication, mechanical and electronic properties." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/van-der-waals-heterostructures-fabrication-mechanical-and-electronic-properties(047ce24b-7a58-4192-845d-54c7506f179f).html.

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The fast progress in the exploration of 2D materials such as graphene became possible due to development of fabrication techniques that allowed these materials to be protected from e.g. undesirable doping and gave rise to new functionalities realized within van der Waals heterostructures. Attracted by van der Waals interaction the constituent layers of such heterostructures preserve their exceptional electronic quality and for example in graphene allow for high electron mobility to be achieved. However, the studies of atomically thin layers such as NbSe2 that exhibit metallic behavior have been impeded by their reactivity and hence oxidation during exposure to ambient or oxidizing agents such as solvents. In this thesis, the existing heterostructure assembly technique was improved by the introduction of exfoliation and re-stacking by a fully motorized system placed in an inert atmosphere. This approach allowed us to overcome the problem of environmental degradation and create Hall bars and planar tunnel junctions from atomically thin superconducting NbSe2. Furthermore, this versatile approach allowed us to study the thickness dependence of the normal and superconducting state transport properties of NbSe2, uncovering the reduction of the superconducting energy gap and transition temperature in the thinnest samples. On the other hand, 2D materials being just 1-3 atoms thick represent an ultimate example of a membrane - thin but laterally extended object. Consisting of such atomically thin membranes the van der Waals heterostructures can be used for purposes other than the studies of electronic transport. In this work, ubiquitous bubbles occurring during van der Waals heterostructure assembly are employed as a tool to explore 2D materials' mechanical properties and mutual adhesion. This allowed us to measure Young's modulus of graphene and other 2D materials under 1-2% strain and deduce the internal pressure that can reach up to 1 GPa in sub-nanometer size bubbles.
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Yu, Geliang. "Transport properties of graphene based van der Waals heterostructures." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/transport-properties-of-graphene-based-van-der-waals-heterostructures(5cbb782f-4d49-42da-a05e-15b26606e263).html.

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In the past few years, led by graphene, a large variety of two dimensional (2D) materials have been discovered to exhibit astonishing properties. By assembling 2D materials with different designs, we are able to construct novel artificial van der Waals (vdW) heterostructures to explore new fundamental physics and potential applications for future technology. This thesis describes several novel vdW heterostructures and their fundamental properties. At the beginning, the basic properties of some 2D materials and assembled vdW heterostructures are introduced, together with the fabrication procedure and transport measurement setups. Then the graphene based capacitors on hBN (hexagonal Boron Nitride) substrate are studied, where quantum capacitance measurements are applied to determine the density of states and many body effects. Meanwhile, quantum capacitance measurement is also used to search for alternative substrates to hBN which allow graphene to exhibit micrometer-scale ballistic transport. We found that graphene placed on top of MoS2 and TaS2 show comparable mobilities up to 60,000cm2/Vs. After that, the graphene/hBN superlattices are studied. With a Hall bar structure based on the superlattices, we find that new Dirac minibands appear away from the main Dirac cone with pronounced peaks in the resistivity and are accompanied by reversal of the Hall effects. With the capacitive structure based on the superlattices, quantum capacitance measurement is used to directly probe the density states in the graphene/hBN superlattices, and we observe a clear replica spectrum, the Hofstadter-butterfly fan diagram, together with the suppression of quantum Hall Ferromagnetism. In the final part, we report on the existence of the valley current in the graphene/hBN superlattice structure. The topological current originating from graphene’s two valleys flows in opposite directions due to the broken inversion symmetry in the graphene/hBN superlattice, meaning an open band gap in graphene.
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Tomarken, Spencer Louis. "Thermodynamic and tunneling measurements of van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/123567.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2019
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 201-212).
In certain electronic systems, strong Coulomb interactions between electrons can favor novel electronic phases that are difficult to anticipate theoretically. Accessing fundamental quantities such as the density of states in these platforms is crucial to their analysis. In this thesis, I explore the application of two measurement techniques towards this goal: capacitance measurements that probe the thermodynamic ground state of an electronic system and planar tunneling measurements that access its quasiparticle excitation spectrum. Both techniques were applied to van der Waals materials, a class of crystals composed of layered atomic sheets with weak interplane bonding which permits the isolation of single and few-layer sheets that can be manually assembled into heterostructures. Capacitance measurements were performed on a material system commonly known as magic-angle twisted bilayer graphene (MATBG).
When two monolayers of graphene, a single sheet of graphite, are stacked on top of one another with a relative twist between their crystal axes, the resultant band structure is substantially modified from the cases of both monolayer graphene and Bernal-stacked (non-twisted) bilayer graphene. At certain magic angles, the low energy bands become extremely flat, quenching the electronic kinetic energy and allowing strong electron-electron interactions to become relevant. Exotic insulating and superconducting phases have been observed using conventional transport measurements. By accessing the thermodynamic density of states of MATBG, we estimate its low energy bandwidth, Fermi velocity, and interaction-driven energy gaps. Time-domain planar tunneling was performed on a heterostructure that consisted of monolayer graphene and hexagonal boron nitride (serving as the dielectric and tunnel barrier) sandwiched between a graphite tunneling probe and metal gate.
Tunneling currents were induced by applying a sudden voltage pulse across the full parallel plate structure. The lack of in-plane charge motion allowed access to the tunneling density of states even when the heterostructure was electrically insulating in the quantum Hall regime. These measurements represent the first application of time-domain planar tunneling to the van der Waals class of materials, an important step in extending the technique to new material platforms.
by Spencer Louis Tomarken.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Physics
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Luo, Yuanhong Ph D. Massachusetts Institute of Technology. "Twist angle physics in graphene based van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119050.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2018.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged student-submitted from PDF version of thesis.
Includes bibliographical references (pages 121-131).
In this thesis, I present my experimental work on twisted bilayer graphene, a van der Waals heterostructure consisting of two graphene sheets stack on top of each other. In particular, the twist angle is a new degree of freedom in this system, and has an important effect in the determination of its transport properties. The work presented will explore the twist-dependent physics in two regimes: the large twist angle and small twist angle regimes. In the large-twist angle limit, the two sheets have little interlayer interactions and are strongly decoupled, allowing us to put independent quantum Hall edge modes in both layers. We study the edge state interactions in this system, culminating in the formation of a quantum spin Hall state in twisted bilayer graphene. In the small twist angle limit, interlayer interactions are strong and the layers are strongly hybridized. Additionally, a new long-range moiré phenomenon emerges, and we study the effects of the interplay between moiré physics and interlayer interactions on its transport properties.
by Yuanhong Luo.
Ph. D.
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Yankowitz, Matthew Abraham. "Local Probe Spectroscopy of Two-Dimensional van der Waals Heterostructures." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/594649.

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A large family of materials, collectively known as "van der Waals materials," have attracted enormous research attention over the past decade following the realization that they could be isolated into individual crystalline monolayers, with charge carriers behaving effectively two-dimensionally. More recently, an even larger class of composite materials has been realized, made possible by combining the isolated atomic layers of different materials into "van der Waals heterostructures," which can exhibit electronic and optical behaviors not observed in the parent materials alone. This thesis describes efforts to characterize the atomic-scale structural and electronic properties of these van der Waals materials and heterostructures through scanning tunneling microscopy measurements. The majority of this work addresses the properties of monolayer and few-layer graphene, whose charge carriers are described by massless and massive chiral Dirac Hamiltonians, respectively. In heterostructures with hexagonal boron nitride, an insulating isomorph of graphene, we observe electronic interference patterns between the two materials which depend on their relative rotation. As a result, replica Dirac cones are formed in the valence and conduction bands of graphene, with their energy tuned by the rotation. Further, we are able to dynamically drag the graphene lattice in these heterostructures, owing to an interaction between the scanning probe tip and the domain walls formed by the electronic interference pattern. Similar dragging is observed in domain walls of trilayer graphene, whose electronic properties are found to depend on the stacking configuration of the three layers. Scanning tunneling spectroscopy provides a direct method for visualizing the scattering pathways of electrons in these materials. By analyzing the scattering, we can directly infer properties of the band structures and local environments of these heterostructures. In bilayer graphene, we map the electrically field-tunable band gap and extract electronic hopping parameters. In WSe₂, a semiconducting transition metal dichalcogenide, we observe spin and layer polarizations of the charge carriers, representing a coupling of the spin, valley and layer degrees of freedom.
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Books on the topic "Van der Waals Heterostructures van der Waals heterostructures"

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Holwill, Matthew. Nanomechanics in van der Waals Heterostructures. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9.

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Holwill, Matthew. Nanomechanics in van der Waals Heterostructures. Springer, 2019.

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2D Materials and Van der Waals Heterostructures. MDPI, 2020. http://dx.doi.org/10.3390/books978-3-03928-769-7.

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Zhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.

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Zhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.

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Zhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Limited, John, 2022.

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Zhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.

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Book chapters on the topic "Van der Waals Heterostructures van der Waals heterostructures"

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Holwill, Matthew. "van der Waals Heterostructures." In Nanomechanics in van der Waals Heterostructures, 19–31. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_3.

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Lui, C. H. "Raman Spectroscopy of van der Waals Heterostructures." In Raman Spectroscopy of Two-Dimensional Materials, 81–98. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1828-3_4.

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Holwill, Matthew. "Introduction." In Nanomechanics in van der Waals Heterostructures, 1–6. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_1.

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Holwill, Matthew. "Properties of Two-Dimensional Materials." In Nanomechanics in van der Waals Heterostructures, 7–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_2.

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Holwill, Matthew. "Fabrication and Characterisation Techniques." In Nanomechanics in van der Waals Heterostructures, 33–51. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_4.

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Holwill, Matthew. "Studying Superlattice Kinks via Electronic Transport." In Nanomechanics in van der Waals Heterostructures, 53–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_5.

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Holwill, Matthew. "Atomic Force Microscopy Studies of Superlattice Kinks." In Nanomechanics in van der Waals Heterostructures, 71–83. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_6.

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Holwill, Matthew. "Additional Work." In Nanomechanics in van der Waals Heterostructures, 85–91. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_7.

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Holwill, Matthew. "Conclusions and Future Work." In Nanomechanics in van der Waals Heterostructures, 93–94. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_8.

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Roy, Kallol. "Photoresponse in Graphene-on-MoS$$_2$$ Heterostructures." In Optoelectronic Properties of Graphene-Based van der Waals Hybrids, 141–56. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9_6.

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Conference papers on the topic "Van der Waals Heterostructures van der Waals heterostructures"

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Heinz, Tony F. "Optical Properties of van der Waals Heterostructures." In Laser Science. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/ls.2015.lw4h.1.

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Roy, T., M. Tosun, M. Amani, D. H. Lien, D. Kiriya, P. Zhao, S. Desai, A. Sachid, S. R. Madhvapathy, and A. Javey. "Van der Waals heterostructures for tunnel transistors." In 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S). IEEE, 2015. http://dx.doi.org/10.1109/e3s.2015.7336791.

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Shi, Xihang, Yaniv Kurman, Michael Shentcis, Liang Jie Wong, F. Javier García de Abajo, and Ido Kaminer. "Focused X-ray Beams from Van der Waals Heterostructures." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fw5b.6.

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We present the concept of customized van der Waals heterostructures with periodicity tailored to generate pre-designed X-ray patterns from free electrons. As an example, we demonstrate focused X-ray beams.
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Hashemi, Daniel, Stefan C. Badescu, Michael Snure, and Michael Snure. "Band Alignment in Van der Waals Phosphorous Heterostructures." In THE 3rd INTERNATIONAL CONFERENCE ON THEORETICAL AND APPLIED NANOSCIENCE AND NANOTECHNOLOGY. Avestia Publishing, 2019. http://dx.doi.org/10.11159/tann19.130.

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Plochocka, Paulina. "Excitons in MoS2/MoSe2 Van der Waals heterostructures." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.443.

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Basov, Dmitri N. "Nano-photonic Phenomena in van der Waals heterostructures." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_qels.2015.ftu1e.1.

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Plochocka, Paulina. "Excitons in MoS2/MoSe2 Van der Waals heterostructures." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.nfm.2019.443.

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Mariserla, Bala Murali Krishna, Michael K. L. Man, Soumya Vinod, Catherine Chin, Takaaki Harada, Jaime Taha-Tijerina, Chandra Sekhar Tiwary, et al. "Emergent photophenomena in three dimensional van der Waals heterostructures." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_qels.2015.fm3b.5.

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Kurman, Yaniv, Peter Schmidt, Frank Koppens, and Ido Kaminer. "The Ultimate Purcell Factor in Van der Waals Heterostructures." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_qels.2019.ftu3c.3.

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Miao, Feng. "2D van der Waals Heterostructures for Emerging Device Applications." In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278317.

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Reports on the topic "Van der Waals Heterostructures van der Waals heterostructures"

1

Kim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada616377.

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