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Journal articles on the topic 'Vacuum annealing'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Kurlov, A. S., N. D. Yumasheva, and D. A. Danilov. "Vacuum Annealing of TaC Nanopowders." Russian Journal of Physical Chemistry A 94, no. 7 (July 2020): 1447–55. http://dx.doi.org/10.1134/s0036024420070183.

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2

Chen, Tian, Linzhi Wang, and Sheng Tan. "Effects of vacuum annealing treatment on microstructures and residual stress of AlSi10Mg parts produced by selective laser melting process." Modern Physics Letters B 30, no. 19 (July 20, 2016): 1650255. http://dx.doi.org/10.1142/s0217984916502559.

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Selective laser melting (SLM)-fabricated AlSi10Mg parts were heat-treated under vacuum to eliminate the residual stress. Microstructure evolutions and tensile properties of the SLM-fabricated parts before and after vacuum annealing treatment were studied. The results show that the crystalline structure of SLM-fabricated AlSi10Mg part was not modified after the vacuum annealing treatment. Additionally, the grain refinement had occurred after the vacuum annealing treatment. Moreover, with increasing of the vacuum annealing time, the second phase increased and transformed to spheroidization and coarsening. The SLM-produced parts after vacuum annealing at 300[Formula: see text]C for 2 h had the maximum ultimate tensile strength (UTS), yield strength (YS) and elongation, while the elastic modulus decreased significantly. In addition, the tensile residual stress was found in the as-fabricated AlSi10Mg samples by the microindentation method.
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3

Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-7 Pa, flow of nitrogen and hydrogen. It is shown that the decrease of Ti layer thickness from 200 to 30 nm in the Ti/Si(100) film system causes the increase of the transition temperature of the metastable C49 TiSi2 phase to the stable C54 TiSi2 phase up to 1070 K at vacuum annealing. During annealing in the nitrogen flow of the Ti(30 nm)/Si(100) thin film system the C49 TiSi2 is the first crystal phase which is formed at 870 K. For annealings of the [(Ti+Si) 200 nm]/Si(100) thin film system by impulse heating method or for furnace annealings in inert gas atmosphere of N2, Ar, H or higher vacuum (10-5 Pa) the crystallization process has two stages: the first metastable C49 TiSi2 phase is formed at 870 K and then at higher temperatures it is transformed to the stable C54 TiSi2 phase.
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4

Aiempanakit, K., Supattanapong Dumrongrattana, and P. Rakkwamsuk. "Influence of Structural and Electrical Properties of ITO Films on Electrochromic Properties of WO3 Films." Advanced Materials Research 55-57 (August 2008): 921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.921.

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Indium tin oxide (ITO) films had been deposited on glass substrate without substrate heating and then tungsten oxide (WO3) films were deposited on ITO films by DC magnetron sputtering. In this work, we present the annealing ambient effect of ITO substrate on electrochromic properties of WO3 films. The ITO films were annealing in air and in vacuum at 350°C before coating with WO3 films. The structural, optical, and electrical properties of ITO films for as-deposited, annealing in air and in vacuum were investigated by X-ray diffraction, UV-VIS-NIR spectroscope and four point probe. The ITO films had a better crystallinity and lager grain size after annealing in air and in vacuum. The resistivity of ITO films increase with annealing in air, but decrease with annealing in vacuum. The WO3 films show difference surface morphology with higher grain size and surface roughness when coating on annealed ITO films in both cases. The electrochemical properties of film systems were characterized by cyclic voltammetry. The film systems of ITO plus WO3 showed that the charge capacity of ITO substrate annealing in vacuum was higher than the as-deposited ITO substrate and the ITO substrate annealing in air, respectively. This result corresponded to electrical conductivity of each ITO substrate.
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5

Bouguila, Nourredine, Abdelmajid Timoumi, and Hassen Bouzouita. "Vacuum annealing temperature on spray In2S3layers." European Physical Journal Applied Physics 65, no. 2 (February 2014): 20304. http://dx.doi.org/10.1051/epjap/2014130341.

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6

Lee, S. Y., N. Mettlach, N. Nguyen, Y. M. Sun, and J. M. White. "Copper oxide reduction through vacuum annealing." Applied Surface Science 206, no. 1-4 (February 2003): 102–9. http://dx.doi.org/10.1016/s0169-4332(02)01239-4.

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7

Kurlov, A. S., and A. I. Gusev. "Vacuum annealing of nanocrystalline WC powders." Inorganic Materials 48, no. 7 (June 27, 2012): 680–90. http://dx.doi.org/10.1134/s0020168512060088.

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8

Hsu, Jui Me, Po Ching Ho, Chia Chiang Chang, and Ta Hsin Chou. "Ga-Doped ZnO Films Deposited by Atmospheric Pressure Plasma." Advanced Materials Research 939 (May 2014): 465–72. http://dx.doi.org/10.4028/www.scientific.net/amr.939.465.

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Deposition of gallium-doped zinc oxide (GZO) thin films using atmospheric pressure plasma jet (APPJ) system is presented in this work. High quality GZO films were demonstrated: The resistivity of as-deposited film achieves up to ~7×10-4ohm-cm, which is comparable to that deposited using vacuum process. Further, the optical transmission with optimized thickness is > 89 % at wavelength of 550 nm. The Hall mobility increased as GZO deposition thickness increase to 300 nm. In order to study thermal stability of GZO thin films, the effect of thermal annealing on the optical and electrical properties was studied. Samples annealed in vacuum and in air showed opposite characteristics: resistivity decrease for vacuum annealing samples and increase for air annealing samples. Carrier reduction mainly attributed to the resistivity increase in air annealing. Mobility increases but carrier concentration decreases when samples were annealed in vacuum: The combined effects resulted in resistivity decrease to half of the prior-annealing values after 500 °C vacuum annealing. The GZO thin films used in capacitive touch sensors were also evaluated. We demonstrated that APPJ-deposited GZO thin films can be successfully applied to touch sensors in our work. These results indicate that our APPJ system can deposit good quality TCO films, which have potential to be applied in optoelectronics field.
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9

Zhang, Nai Lu, Li He, Wei Huang, Xin Liu, and Li Bo Li. "Research on Temperature Control System for Vacuum Annealing Furnace Based on Neural Network-PID." Applied Mechanics and Materials 644-650 (September 2014): 298–304. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.298.

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Vacuum annealing is an important part in rare metal tube production, accurate control of the annea ling temperature has enormous influence on the quality of tubes.According to the technological characteristics and temperature control requirements of the vacuum annealing furnace ,a high precision temperature control system was built based on IPC, intelligent temperature controller and thyratron transistor power-regulator.The neural network-PID strategy was proposed to control temperature online through OPC interface, which realized accurate control and automatic detection of the whole process of annealing temperature. Field data indicates that this system has realized the accurate control of the vacuum annealing temperature, effectively improves the quality of rare metal tubes and has extensive application value.
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10

Qin, C.-D., and B. Derby. "Diffusion bonding of nickel and zirconia: Mechanical properties and interfacial microstructures." Journal of Materials Research 7, no. 6 (June 1992): 1480–88. http://dx.doi.org/10.1557/jmr.1992.1480.

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Diffusion bonds of Ni/ZrO2 and Ni/NiO/ZrO2 fabricated in vacuum have been investigated using flexural 4-point bending tests and optical and electron microscopy. It is found that subsequent annealing in air after bonding improves bond strength, and annealing in vacuum reduces strength. This is attributed to the formation of a thin oxide layer during annealing in air which enhances adhesion to the ceramic, whereas annealing in vacuum creates debonding voids at the specimen edges. The transformation of NiO in vacuum to Ni explains why the strength of bonds using preoxidized Ni foil does not show any increase, as it is essentially still the diffusion bonding of Ni to ZrO2 in the configuration of Ni/NiO/Ni/ZrO2. The presence of extensive void necklaces on grain boundaries in the metal where they intersect the bonding interface shows the importance of the metal grain boundaries acting as vacancy sinks during diffusion bonding.
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11

Harris-Lee, Thom R., Yan Zhang, Christopher R. Bowen, Philip J. Fletcher, Yuanzhu Zhao, Zhenyu Guo, Jerome W. F. Innocent, S. Andrew L. Johnson, and Frank Marken. "Photo-Chlorine Production with Hydrothermally Grown and Vacuum-Annealed Nanocrystalline Rutile." Electrocatalysis 12, no. 1 (November 9, 2020): 65–77. http://dx.doi.org/10.1007/s12678-020-00630-x.

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AbstractPhoto-generated high-energy surface states can help to produce chlorine in aqueous environments. Here, aligned rutile (TiO2) nanocrystal arrays are grown onto fluorine-doped tin oxide (FTO) substrates and activated either by hydrothermal Sr/Ba surface doping and/or by vacuum-annealing. With vacuum-annealing, highly photoactive films are obtained with photocurrents of typically 8 mA cm−2 at 1.0 V vs. SCE in 1 M KCl (LED illumination with λ = 385 nm and approx. 100 mW cm−2). Photoelectrochemical chlorine production is demonstrated at proof-of-concept scale in 4 M NaCl and suggested to be linked mainly to the production of Ti(III) surface species by vacuum-annealing, as detected by post-catalysis XPS, rather than to Sr/Ba doping at the rutile surface. The vacuum-annealing treatment is proposed to beneficially affect (i) bulk semiconductor TiO2 nanocrystal properties and electron harvesting, (ii) surface TiO2 reactivity towards chloride adsorption and oxidation, and (iii) FTO substrate performance.
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12

Sundaram, Rajyashree, Takeo Yamada, Kenji Hata, and Atsuko Sekiguchi. "Purifying carbon nanotube wires by vacuum annealing." Materials Today: Proceedings 5, no. 13 (2018): 27316–26. http://dx.doi.org/10.1016/j.matpr.2018.08.157.

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13

Lazarova, V., Ts Yordanov, L. Spassov, and G. Beshkov. "Vacuum rapid thermal annealing of quartz resonators." Vacuum 69, no. 1-3 (December 2002): 379–83. http://dx.doi.org/10.1016/s0042-207x(02)00362-7.

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14

Ni, Zhen Hua, Hao Min Wang, Zhi Qiang Luo, Ying Ying Wang, Ting Yu, Yi Hong Wu, and Ze Xiang Shen. "The effect of vacuum annealing on graphene." Journal of Raman Spectroscopy 41, no. 5 (October 21, 2009): 479–83. http://dx.doi.org/10.1002/jrs.2485.

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15

Moolsradoo, Nutthanun, Shinya Abe, and Shuichi Watanabe. "Thermal Stability and Tribological Performance of DLC-Si–O Films." Advances in Materials Science and Engineering 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/483437.

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The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon films were investigated. The DLC-Si-O films were deposited using plasma-based ion implantation (PBII) method. The deposited films were annealed at 400°C, 600°C, and 750°C for 1 hour in vacuum, in argon, and in air atmospheres. Film properties were investigated using the Fourier transforms infrared spectroscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and a ball-on-disk friction tester. The structures of the DLC-Si-O films with a low Si content (25 at.%Si, 1 at.%O) and high Si content (25 at.%Si, 1 at.%O) were not affected by the thermal annealing in vacuum at 400°C and 600°C, respectively, while they were affected by thermal annealing in argon and in air at 400°C. Film with 34 at.%Si and 9 at.%O after annealing demonstrated almost constant atomic contents until annealing at 600°C in vacuum. The friction coefficient of DLC-Si–O films with 34 at.%Si and 9 at.%O was shown to be relatively stable, with a friction coefficient of 0.04 before annealing and 0.05 after annealing at 600°C in vacuum. Moreover, the low friction coefficient of film annealed at 600°C in vacuum with 34 at.%Si and 9 at.%O was corresponded with low wear rate of 1.85 10−7 mm3/Nm.
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16

Ginley, D. S., P. J. Nigrey, E. L. Venturini, B. Morosin, and J. F. Kwak. "Reoxygenation of vacuum-annealed YBa2Cu3O6.9." Journal of Materials Research 2, no. 6 (December 1987): 732–35. http://dx.doi.org/10.1557/jmr.1987.0732.

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Vacuum-annealed samples of single-phase orthorhombic YBa2Cu3O6.9 have been reoxygenated. The vacuum-annealed material is tetragonal, semiconducting at room temperature, and shows no superconductivity. Upon annealing these samples in 640 Torr O2 at 200°C, a partial return of 90 K superconductivity is observed; complete restoration is achieved following 300°C anneals. Oxygen uptake in vacuum-annealed pellets follows an Arrhenius relation with an activation energy of −27 kcal/mol. Deoxygenation and reoxygenation does not seem to affect the structure of the grain interconnects in the material. The maximum oxygen uptake for vacuum-annealed material occurs at 450°C, while the maximum magnetic Meissner effect is observed following oxygen annealing at 350°C.
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17

Bouabid, K., A. Ihlal, A. Outzourhit, and E. L. Ameziane. "Structural and Optical Properties ofIn2S3Thin Films Prepared by Flash Evaporation." Active and Passive Electronic Components 27, no. 4 (2004): 207–14. http://dx.doi.org/10.1080/08827510310001648899.

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In2S3thin films were deposited by flash evaporation ofIn2S3powder. The effect of annealing in vacuum and under sulphur atmosphere on the structural and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation ofβ-In2S3phase is obtained after annealing under vacuum at 693 K. Heat treatments under sulphur pressure lead to the formation of the above phase at a less annealing temperature (573 K). The energy dispersive X-ray (EDX) analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness and the annealing temperature.
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18

Tam, C. Y., and C. H. Shek. "Oxidation-induced copper segregation in Cu60Zr30Ti10 bulk metallic glass." Journal of Materials Research 21, no. 4 (April 1, 2006): 851–55. http://dx.doi.org/10.1557/jmr.2006.0120.

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Copper segregation in a subsurface layer during annealing of Cu60Zr30Ti10 bulk metallic glass at 773 K under oxygen atmosphere has been investigated by x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. The formation of metallic copper is strongly dependent on the annealing environment. Various oxides with metallic copper are formed after annealing in oxygen atmosphere, but only crystalline intermetallic phases are found under vacuum annealing. Besides, surface characterization results show that the sample annealed in oxygen and vacuum result in enrichment and depletion of Cu on the surface region, respectively.
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19

Polyakov, B., A. Petruhin, L. Grigorjeva, P. Kulis, and I. Tale. "Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser Deposition." Latvian Journal of Physics and Technical Sciences 46, no. 1 (January 1, 2009): 44–48. http://dx.doi.org/10.2478/v10047-009-0003-4.

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Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser DepositionZnO thin films were deposited by pulsed laser deposition (fluence 2.2 J/cm2) in vacuum on different substrates kept at room temperature. This temperature allowed for fast film growing, however the as-prepared films had low transparency. To improve this optical property, keeping up at the same time the high electric conductivity of the films, post-annealing procedures in vacuum and in air were carried out. The influence of these procedures on the optical absorption, photoluminescence and electrical properties has been investigated. It is shown that the annealing in air improves only the transparency of such a film, however its conductivity decreases markedly. In turn, vacuum annealing for 3 min. at 600° C results in better transparency of the films, with their electric conductivity kept high.
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20

Bulkov, Alexey B., Vladimir V. Peshkov, and Vladimir F. Selivanov. "Kinetics of Growth of Gas-Saturated (Embrittled) Layers on Titanium during Vacuum Annealing." Solid State Phenomena 316 (April 2021): 821–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.316.821.

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The influence of the parameters of the vacuum annealing mode on the thickness of the embrittled layers, formed on the surface of titanium as a result of its interaction with the residual gases of the vacuumed space, is studied. The thickness and structure of the layers were determined on samples made of VT6 alloy obtained from sheet metal with a thickness of 3 mm. Annealing of samples in the temperature range of 500-750 °C was performed with air dilution from 10 to 3∙10-2 PA. The dimensions of the embrittled layers were determined by measuring the zone of brittle crack propagation in the fracture of the samples, and measuring the distance between the surface cracks in the embrittled layers, formed during bending deformation. To quantify the effect of vacuum annealing modes of sheet titanium alloy VT6 on the depth of the embrittled part of the formed oxide layer, it is proposed to use a parabolic relationship, characterized by the degree of growth and the constant of the embrittled layer. By processing experimental data, the effect of annealing time, temperature, and air dilution on the growth kinetics of the embrittled layers was established. Based on the obtained kinetic regularities of the growth of the embrittled layers, nomograms are constructed, to determine the size of the embrittled layer formed at the heating stage at different speeds up to the specified annealing temperature.
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21

Journal, Baghdad Science. "Isochronal Studies of the Structural and Electrical Properties of CdTe Films." Baghdad Science Journal 8, no. 1 (March 6, 2011): 134–40. http://dx.doi.org/10.21123/bsj.8.1.134-140.

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The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.
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22

Watanabe, Ken, Tetsuya Kida, Isao Sakaguchi, Naoki Ohashi, Kengo Shimanoe, and Hajime Haneda. "Effect of Annealing Atmosphere on Oxygen Diffusion through Ba-Fe-Based Perovskite Oxide." Key Engineering Materials 485 (July 2011): 141–44. http://dx.doi.org/10.4028/www.scientific.net/kem.485.141.

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To determine the effect of the annealing atmosphere on oxygen diffusion through Ba0.95La0.05FeO3-d pellets, 18O2 tracer diffusion and high-resolution secondary ion mapping were performed. When annealing in air, the 18O concentration around the surface up to a depth of 40 µm was almost constant. On the other hand, when annealing in vacuum, the 18O concentration obviously decreased. High-resolution secondary ion mapping indicated that the 18O concentration around the grain boundary was reduced. These results suggested that the grain boundary of BLF annealed in vacuum prevents oxygen diffusion.
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23

Xue, Guanming, Yingchao Sun, Ling Xiang, Zhiguo Wang, Suying Hu, and Zhiwen Xie. "Effect of Vacuum Annealing on Microstructure and Hot-Salt Corrosion Behavior of CoNiCrAlY/YSZ/LaMgAl11O19 Double-Ceramic Coating." Coatings 11, no. 8 (August 9, 2021): 951. http://dx.doi.org/10.3390/coatings11080951.

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This study investigated the potential effect of vacuum annealing on the microstructure and hot salt corrosion behavior of CoNiCrAlY/YSZ/LaMgAl11O19 (LMA) double-ceramic coatings. A hot-salt corrosion test revealed that sprayed coatings exhibited an unsatisfactory anti-corrosion performance, and the LMA layer underwent severe fracture and corrosion degradation. Vacuum annealing induced a prominent recrystallization of the amorphous phase in LMA layer, triggering severe volume shrinkage and microcrack initiation. The recrystallization and volume shrinkage of the LMA layer were aggravated by an increase in the annealing temperature. The annealed coating with a higher fraction of the LaMA phase showed superior resistance to hot-salt corrosion. However, the salt mixture diffused simultaneously along the microcracks and eventually eroded into the YSZ layer. These results confirmed that vacuum annealing significantly enhanced the hot-salt corrosion resistance of the LMA layer. However, it deteriorated the barrier effect of the salt mixture through microcrack formation.
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24

Novikov, S., Yu N. Makarov, Heikki Helava, S. Lebedev, Andrey Lebedev, and Valeri Davydov. "Highly Sensitive NO2 Graphene Sensor Made on SiC Grown in Ta Crucible." Materials Science Forum 858 (May 2016): 1149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1149.

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Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring
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25

Yang, Xiangdong, Haitao Wang, Peng Wang, Xuxin Yang, and Hongying Mao. "Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2." Nanomaterials 10, no. 2 (January 26, 2020): 210. http://dx.doi.org/10.3390/nano10020210.

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Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.
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26

LI, Xiaobin. "Modeling and Decoupling Control for Vacuum Annealing Temperature." Chinese Journal of Mechanical Engineering 44, no. 10 (2008): 89. http://dx.doi.org/10.3901/jme.2008.10.089.

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27

Antón, R. López, J. A. González, J. P. Andrés, J. Canales-Vázquez, J. A. De Toro, and J. M. Riveiro. "High-vacuum annealing reduction of Co/CoO nanoparticles." Nanotechnology 25, no. 10 (February 14, 2014): 105702. http://dx.doi.org/10.1088/0957-4484/25/10/105702.

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28

Valdna, V. "Effect of the vacuum annealing onp-type CdTe." Physica Scripta T69 (January 1, 1997): 315–18. http://dx.doi.org/10.1088/0031-8949/1997/t69/068.

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29

Tomisu, Masahiro, Narumi Inoue, and Yoshizumi Yasuoka. "Annealing effect of vacuum evaporated InSb thin films." Vacuum 47, no. 3 (March 1996): 239–42. http://dx.doi.org/10.1016/0042-207x(95)00208-1.

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30

Kurlov, A. S., and A. I. Gusev. "Peculiarities of vacuum annealing of nanocrystalline WC powders." International Journal of Refractory Metals and Hard Materials 32 (May 2012): 51–60. http://dx.doi.org/10.1016/j.ijrmhm.2012.01.009.

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31

Chen, Shuang, Li Fang Zhang, Cui Zhi Dong, Kuai Zhang, and Xiudong Zhu. "W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering." Advanced Materials Research 652-654 (January 2013): 1747–50. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.1747.

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W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.
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32

Ahmadi, Monelee, and Vahid Khorramshahi. "Enhancing the Conductivity of the Nanostructured ZnO Thin Film by Vacuum Annealing." International Journal of Nanoscience 20, no. 03 (May 7, 2021): 2150023. http://dx.doi.org/10.1142/s0219581x2150023x.

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ZnO thin films were successfully synthesized using a facile chemical route and were characterized employing X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and photoluminescence (PL) analysis. The obtained precursor was spin-coated on Si(100)/SiO2 wafers, then the substrates were divided into two groups for the thermal annealing at ambient and vacuum conditions. Morphological characterization showed the formation of nanoflowers and porous structures at different annealing conditions. The effect of vacuum annealing on the current-voltage characterization of ZnO thin film has been presented to inspect the role of annealing condition in device fabrication. The electrical properties of the ZnO thin films were performed in the temperature range of 75–[Formula: see text]C. At [Formula: see text]C, the ambient annealed sample presents the current value of 10[Formula: see text][Formula: see text]A for 5[Formula: see text]V, and the vacuum annealed sample reaches the maximum current of 3.1[Formula: see text]mA for the same operating voltage. The presence of oxygen vacancies notably affects the electrical properties of ZnO thin films.
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33

Chen, Shuang, Cui Zhi Dong, Li Fang Zhang, and Zhi Ming Yu. "Annealing Effects on W-Doped VO2 Thin Films Prepared from Magnetron Sputtering." Advanced Materials Research 538-541 (June 2012): 101–4. http://dx.doi.org/10.4028/www.scientific.net/amr.538-541.101.

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W-doped VO2 thin films were prepared by magnetron sputtering after annealing in vacuum. The structure, morphology, infrared transmittance and phase transition were characterized by X-ray diffractometer, atomic force microscopy(AFM), infrared spectrometer (IR) and differential thermal analysis(DTA), respectively. The results show that after vacuum annealing at 500 °C for 2h, the major phase of W doped films is VO2. Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C.
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34

Xiao, Qing Quan, Quan Xie, Ke Jie Zhao, and Zhi Qiang Yu. "Effect of Annealing Atmosphere on the Mg2Si Film Growth Deposited by Magnetron Sputtering." Advanced Materials Research 129-131 (August 2010): 290–94. http://dx.doi.org/10.4028/www.scientific.net/amr.129-131.290.

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Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of annealing atmosphere on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that annealing atmosphere was an important factor that affected the growth of Mg2Si thin films, and vacuum annealing was not suitable for preparing Mg2Si thin films. Only Si (111) substrate diffraction peaks were observed, and no Mg2Si diffraction peak was observed when the first six Mg/Si samples were annealed under vacuum annealing condition. However, many Mg2Si diffraction peaks were observed besides the Si substrate diffraction peaks when the second six Mg/Si samples were annealed under Ar gas atmosphere. In addition, compact and smooth Mg2Si thin films annealed under Ar gas atmosphere were obtained.
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35

Cho, Hoon, Byoung Soo Lee, Hak Young Kim, and Hyung Ho Jo. "Influence of Annealing Atmosphere on the Mechanical and Wear Properties of Free-Cutting Phosphor Bronze Alloy." Advanced Materials Research 26-28 (October 2007): 461–64. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.461.

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The influence of annealing atmosphere on mechanical and wear properties of free-cutting phosphor bronze alloy was investigated. After annealing in vacuum, the mechanical properties of the alloy decreases due to vaporization of alloying element. In addition, the softening of matrix induces decreasing the wear resistance dramatically. In contrast, high mechanical properties were observed in the alloy annealed in air and in nitrogen atmosphere. In particular, a large smearing of lead in the alloy annealed in air atmosphere was observed and was affected on the enhancement of wear resistance. Consequently, annealing in vacuum atmosphere is not suitable for high mechanical properties and wear resistance.
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36

Ndubuisi, G. C., J. Liu, and J. M. Cowley. "Annealing effects on the sapphire (0001) surface." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 544–45. http://dx.doi.org/10.1017/s042482010015469x.

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The techniques of RHEED, REM and SREM have proven to be important in the study of surface structures. Since these techniques are sensitive to surface perturbations at nanometer scale they can be used to study surface structures as well as surface interactions such as metal surface oxidation processes, metal substrate interactions, etc. The study of the as-grown and the cleaved sapphire surfaces have benn reported. This paper intends to reports some preliminary results on the study of annealed sapphire (0001) surface structures and possible interactions with deposited small metal particles.The sapphire rod, with c-axis parallel to the rod, was purchased from Saphikon, Inc. A 2.0 mm disc was cut, thinned, oriented to the (0001) face and polished to 2.8х 1.0х0.2mm strips. Some of the strips were examined by Laue back reflection to ensure preservation of the [0001] orientation, then cleaned and transported to the furnace. The specimens were annealed in pure oxygen at high temperatures with a vacuum pressure a little above atmospheric. The experiments were performed both in a Philips 400T TEM with a vacuum pressure around 10-7 to 10-6 Torr. and in a VG HB5 STEM microscope with a vacuum pressure of about 5×10-9.
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37

Pan, Rui Kun, Yang Li, Fan Fang, Wan Qiang Cao, and Yun Bin He. "Effect of Annealing on Valence Electronic States Related to Mn Ions of La0.67Sr0.33MnO3 Films." Materials Science Forum 893 (March 2017): 113–17. http://dx.doi.org/10.4028/www.scientific.net/msf.893.113.

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La0.67Sr0.33MnO3 (LSMO) films were prepared on SrTiO3 single-crystal substrates by the pulsed laser deposition method. X-ray photoelectron spectra (XPS) were measured for the LSMO films as-prepared and annealed in vacuum, respectively. Multiple peak fitting for Mn 2p3/2 XPS spectra shows that Mn3+ and Mn4+ proportionally decrease on the surface of the LSMO film annealed in vacuum compared with the as-prepared film. And the saturation magnetization (Ms) slightly decreases. Analysis indicates that a small amount of Mn2+, as surface defects of LSMO films, hardly changed after vacuum annealing. The total of Mn3+, Mn4+ and the low-binding energy peak (LEP) remains unchanged before and after annealing in vacuum, which suggests that LEP should be related with Mn3+ and Mn4+ when the magnetic properties are considered.
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38

Fabrizi, A., Marcello Cabibbo, R. Cecchini, S. Spigarelli, C. Paternoster, Marie Haidopoulo, and P. V. Kiryukhantsev-Korneev. "Thermal Stability of Nanostructured Coatings." Materials Science Forum 653 (June 2010): 1–22. http://dx.doi.org/10.4028/www.scientific.net/msf.653.1.

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This paper is a review of the thermal stability of nanostructured nitride coatings synthesised by reactive magnetron sputtering technique. In the last three decade, nitride based coatings have been widely applied as hard wear-protective coatings in mechanical components. More recently, a larger interest has been addressed to evaluate the thermal stability of such coatings, as their mechanical and tribological properties are deteriorated at high working temperatures. This study describes the microstructural, mechanical and compositional stability of nano-crystalline Cr-N and nano-composited Ti-N based coatings (Ti-Al-Si-B-N and Ti-Cr-B-N) after air and vacuum annealing. For Cr-N coatings annealing in vacuum induces phase transformation from CrN to Cr2N, while after annealing in air only Cr2O3 phase is present. For Ti-N based coatings, a well-definite multilayered structure was shown after air annealing. Degradation of mechanical properties was observed for all the nitride coatings after thermal annealing in air.
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Abdul-Hamead, Alaa A. "Effect of annealed temperature on some structural, optical and mechanical properties of selenium thin film." Iraqi Journal of Physics (IJP) 12, no. 24 (February 18, 2019): 52–59. http://dx.doi.org/10.30723/ijp.v12i24.321.

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In this paper a thin films of selenium was prepare on substrates of n-Si by evaporation in a vacuum technique with thickness about 0.5μm. And then an annealing process was done on samples at two temperature (100 and 200) C ° in a vacuum furnace (10-3 torr).Some structural, optical and mechanical properties of prepared thin films were measured. Results showed that the prepared film was the crystallization, optical transmittance and micro hardness of the prepared thin films increased significantly after annealing.
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40

Vaschilin, V. S., and Egor Krivonozhko. "STUDIES OF THE INFLUENCE OF THE." Actual directions of scientific researches of the XXI century: theory and practice 8, no. 2 (December 29, 2020): 40–46. http://dx.doi.org/10.34220/2308-8877-2020-8-2-40-46.

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TiOх coatings are obtained by magnetron sputtering on a glass substrate, followed by vacuum photonic annealing to modify the coatings. Absolutely all samples obtained in the process of magnetron sputtering contained nonstoichiometric phases in their composition, and different O2 concentrations in plasma corresponded, in general, to different nonstoichiometric oxides, which may indicate the preferable formation of different TiO2 phases through different nonstoichiometric phases. It has been shown that with an increase in the oxygen concentration in the magnetron plasma, the structure of the coatings changes from amorphous to anatase-rutile (with a predominance of anatase). X-ray studies of the obtained samples of coatings have been carried out, which establish the role of oxygen in the crystallization of TiOx coatings, the effect of vacuum photon annealing on the formation of the anatase phase. It has been established that thermal treatment by photonic vacuum annealing at sufficiently low temperatures (350 ° C) promotes the recrystallization of all phases present in the coating into anatase phase.
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41

Шалыгин, Михаил, and Mikhail Shalygin. "Structure formation in surface layer of machine parts by methods of high-vacuum annealing and ion implantation." Science intensive technologies in mechanical engineering 1, no. 7 (July 4, 2016): 10–13. http://dx.doi.org/10.12737/20594.

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This paper reports the problems of hydrogen wear decrease in steel parts operating in hydrogen medium. The friction couples of particular machine parts subjected to hydrogen wear are shown. Steel grades of the samples analyzed and their hardness are pointed out. The technologies of high- vacuum annealing and ion implantation used in investigations are de-scribed. The modes for the carrying out of high-vacuum annealing and ion implantation of silicon into a surface of the samples investigated are presented. It is determined that in a surface layer after the carrying out of high-vacuum annealing and ion implantation appear new structures with their form similar to roundish spots. The dimensions of spots and their distribution according to depth are defined. The sample breaking tests are carried out. It is established that technological operations carried out affect only the surface layers of samples. The investigation results can be used at the analysis of methods for hydrogen wear decrease of parts operating in hydrogen medium.
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42

Misra, Shikhar, Di Zhang, Ping Lu, and Haiyan Wang. "Thermal stability of self-assembled ordered three-phase Au–BaTiO3–ZnO nanocomposite thin films via in situ heating in TEM." Nanoscale 12, no. 46 (2020): 23673–81. http://dx.doi.org/10.1039/d0nr06115h.

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Thermal stability of an ordered three-phase Au–BaTiO3–ZnO vertically aligned nanostructure by both ex situ annealing under air and vacuum conditions, and in situ heating in TEM in vacuum has been demonstrated.
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43

Feng, Jiangshan, Yuxiao Jiao, Hui Wang, Xuejie Zhu, Youming Sun, Minyong Du, Yuexian Cao, Dong Yang, and Shengzhong (Frank) Liu. "High-throughput large-area vacuum deposition for high-performance formamidine-based perovskite solar cells." Energy & Environmental Science 14, no. 5 (2021): 3035–43. http://dx.doi.org/10.1039/d1ee00634g.

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An in-vacuum low-temperature annealing process is developed to make high-density formamidine-based perovskite films. When the temperature is optimized, the efficiency increases to 21.32%, the highest value for a PSC fabricated with vacuum deposition.
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44

Xiao, Tingting, Qi Yang, Jian Yu, Zhengwei Xiong, and Weidong Wu. "Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition." Nanomaterials 11, no. 1 (January 8, 2021): 131. http://dx.doi.org/10.3390/nano11010131.

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FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.
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45

Xiao, Tingting, Qi Yang, Jian Yu, Zhengwei Xiong, and Weidong Wu. "Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition." Nanomaterials 11, no. 1 (January 8, 2021): 131. http://dx.doi.org/10.3390/nano11010131.

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FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.
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46

Park, Hyunik, Jongha Son, and Jihyun Kim. "Reducing the contact and channel resistances of black phosphorus via low-temperature vacuum annealing." Journal of Materials Chemistry C 6, no. 6 (2018): 1567–72. http://dx.doi.org/10.1039/c7tc05325h.

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47

Verma, Ashok, L. M. Malhotra, Kavita S. Jerath, Y. K. Vijay, and I. P. Jain. "Mossbauer Studies of Metallic Glasses Annealing Hydrogen and Vacuum." Key Engineering Materials 13-15 (January 1987): 355–58. http://dx.doi.org/10.4028/www.scientific.net/kem.13-15.355.

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48

Fabis, Philip M. "Defect distribution modification in CVD diamond by vacuum annealing." Thin Solid Films 288, no. 1-2 (November 1996): 193–97. http://dx.doi.org/10.1016/s0040-6090(96)08839-6.

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49

Beshkov, G., DB Dimitrov, St Georgiev, P. Petrov, L. Zambov, B. Ivanov, C. Popov, and M. Georgiev. "Thin CNx films prepared by vacuum rapid thermal annealing." Vacuum 51, no. 2 (October 1998): 169–72. http://dx.doi.org/10.1016/s0042-207x(98)00152-3.

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50

Osswald, Sebastian, John Chmiola, and Yury Gogotsi. "Structural evolution of carbide-derived carbons upon vacuum annealing." Carbon 50, no. 13 (November 2012): 4880–86. http://dx.doi.org/10.1016/j.carbon.2012.06.016.

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