Academic literature on the topic 'Vacuum annealing'

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Journal articles on the topic "Vacuum annealing"

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Kurlov, A. S., N. D. Yumasheva, and D. A. Danilov. "Vacuum Annealing of TaC Nanopowders." Russian Journal of Physical Chemistry A 94, no. 7 (July 2020): 1447–55. http://dx.doi.org/10.1134/s0036024420070183.

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Chen, Tian, Linzhi Wang, and Sheng Tan. "Effects of vacuum annealing treatment on microstructures and residual stress of AlSi10Mg parts produced by selective laser melting process." Modern Physics Letters B 30, no. 19 (July 20, 2016): 1650255. http://dx.doi.org/10.1142/s0217984916502559.

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Selective laser melting (SLM)-fabricated AlSi10Mg parts were heat-treated under vacuum to eliminate the residual stress. Microstructure evolutions and tensile properties of the SLM-fabricated parts before and after vacuum annealing treatment were studied. The results show that the crystalline structure of SLM-fabricated AlSi10Mg part was not modified after the vacuum annealing treatment. Additionally, the grain refinement had occurred after the vacuum annealing treatment. Moreover, with increasing of the vacuum annealing time, the second phase increased and transformed to spheroidization and coarsening. The SLM-produced parts after vacuum annealing at 300[Formula: see text]C for 2 h had the maximum ultimate tensile strength (UTS), yield strength (YS) and elongation, while the elastic modulus decreased significantly. In addition, the tensile residual stress was found in the as-fabricated AlSi10Mg samples by the microindentation method.
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Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-7 Pa, flow of nitrogen and hydrogen. It is shown that the decrease of Ti layer thickness from 200 to 30 nm in the Ti/Si(100) film system causes the increase of the transition temperature of the metastable C49 TiSi2 phase to the stable C54 TiSi2 phase up to 1070 K at vacuum annealing. During annealing in the nitrogen flow of the Ti(30 nm)/Si(100) thin film system the C49 TiSi2 is the first crystal phase which is formed at 870 K. For annealings of the [(Ti+Si) 200 nm]/Si(100) thin film system by impulse heating method or for furnace annealings in inert gas atmosphere of N2, Ar, H or higher vacuum (10-5 Pa) the crystallization process has two stages: the first metastable C49 TiSi2 phase is formed at 870 K and then at higher temperatures it is transformed to the stable C54 TiSi2 phase.
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Aiempanakit, K., Supattanapong Dumrongrattana, and P. Rakkwamsuk. "Influence of Structural and Electrical Properties of ITO Films on Electrochromic Properties of WO3 Films." Advanced Materials Research 55-57 (August 2008): 921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.921.

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Indium tin oxide (ITO) films had been deposited on glass substrate without substrate heating and then tungsten oxide (WO3) films were deposited on ITO films by DC magnetron sputtering. In this work, we present the annealing ambient effect of ITO substrate on electrochromic properties of WO3 films. The ITO films were annealing in air and in vacuum at 350°C before coating with WO3 films. The structural, optical, and electrical properties of ITO films for as-deposited, annealing in air and in vacuum were investigated by X-ray diffraction, UV-VIS-NIR spectroscope and four point probe. The ITO films had a better crystallinity and lager grain size after annealing in air and in vacuum. The resistivity of ITO films increase with annealing in air, but decrease with annealing in vacuum. The WO3 films show difference surface morphology with higher grain size and surface roughness when coating on annealed ITO films in both cases. The electrochemical properties of film systems were characterized by cyclic voltammetry. The film systems of ITO plus WO3 showed that the charge capacity of ITO substrate annealing in vacuum was higher than the as-deposited ITO substrate and the ITO substrate annealing in air, respectively. This result corresponded to electrical conductivity of each ITO substrate.
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Bouguila, Nourredine, Abdelmajid Timoumi, and Hassen Bouzouita. "Vacuum annealing temperature on spray In2S3layers." European Physical Journal Applied Physics 65, no. 2 (February 2014): 20304. http://dx.doi.org/10.1051/epjap/2014130341.

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Lee, S. Y., N. Mettlach, N. Nguyen, Y. M. Sun, and J. M. White. "Copper oxide reduction through vacuum annealing." Applied Surface Science 206, no. 1-4 (February 2003): 102–9. http://dx.doi.org/10.1016/s0169-4332(02)01239-4.

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Kurlov, A. S., and A. I. Gusev. "Vacuum annealing of nanocrystalline WC powders." Inorganic Materials 48, no. 7 (June 27, 2012): 680–90. http://dx.doi.org/10.1134/s0020168512060088.

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Hsu, Jui Me, Po Ching Ho, Chia Chiang Chang, and Ta Hsin Chou. "Ga-Doped ZnO Films Deposited by Atmospheric Pressure Plasma." Advanced Materials Research 939 (May 2014): 465–72. http://dx.doi.org/10.4028/www.scientific.net/amr.939.465.

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Deposition of gallium-doped zinc oxide (GZO) thin films using atmospheric pressure plasma jet (APPJ) system is presented in this work. High quality GZO films were demonstrated: The resistivity of as-deposited film achieves up to ~7×10-4ohm-cm, which is comparable to that deposited using vacuum process. Further, the optical transmission with optimized thickness is > 89 % at wavelength of 550 nm. The Hall mobility increased as GZO deposition thickness increase to 300 nm. In order to study thermal stability of GZO thin films, the effect of thermal annealing on the optical and electrical properties was studied. Samples annealed in vacuum and in air showed opposite characteristics: resistivity decrease for vacuum annealing samples and increase for air annealing samples. Carrier reduction mainly attributed to the resistivity increase in air annealing. Mobility increases but carrier concentration decreases when samples were annealed in vacuum: The combined effects resulted in resistivity decrease to half of the prior-annealing values after 500 °C vacuum annealing. The GZO thin films used in capacitive touch sensors were also evaluated. We demonstrated that APPJ-deposited GZO thin films can be successfully applied to touch sensors in our work. These results indicate that our APPJ system can deposit good quality TCO films, which have potential to be applied in optoelectronics field.
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Zhang, Nai Lu, Li He, Wei Huang, Xin Liu, and Li Bo Li. "Research on Temperature Control System for Vacuum Annealing Furnace Based on Neural Network-PID." Applied Mechanics and Materials 644-650 (September 2014): 298–304. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.298.

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Vacuum annealing is an important part in rare metal tube production, accurate control of the annea ling temperature has enormous influence on the quality of tubes.According to the technological characteristics and temperature control requirements of the vacuum annealing furnace ,a high precision temperature control system was built based on IPC, intelligent temperature controller and thyratron transistor power-regulator.The neural network-PID strategy was proposed to control temperature online through OPC interface, which realized accurate control and automatic detection of the whole process of annealing temperature. Field data indicates that this system has realized the accurate control of the vacuum annealing temperature, effectively improves the quality of rare metal tubes and has extensive application value.
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Qin, C.-D., and B. Derby. "Diffusion bonding of nickel and zirconia: Mechanical properties and interfacial microstructures." Journal of Materials Research 7, no. 6 (June 1992): 1480–88. http://dx.doi.org/10.1557/jmr.1992.1480.

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Diffusion bonds of Ni/ZrO2 and Ni/NiO/ZrO2 fabricated in vacuum have been investigated using flexural 4-point bending tests and optical and electron microscopy. It is found that subsequent annealing in air after bonding improves bond strength, and annealing in vacuum reduces strength. This is attributed to the formation of a thin oxide layer during annealing in air which enhances adhesion to the ceramic, whereas annealing in vacuum creates debonding voids at the specimen edges. The transformation of NiO in vacuum to Ni explains why the strength of bonds using preoxidized Ni foil does not show any increase, as it is essentially still the diffusion bonding of Ni to ZrO2 in the configuration of Ni/NiO/Ni/ZrO2. The presence of extensive void necklaces on grain boundaries in the metal where they intersect the bonding interface shows the importance of the metal grain boundaries acting as vacancy sinks during diffusion bonding.
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Dissertations / Theses on the topic "Vacuum annealing"

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Mallipeddi, Dinesh. "Carbon and Oxygen reduction during vacuum annealing of stainless steel powder." Thesis, KTH, Materialvetenskap, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101664.

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Stainless steel family grades are very famous for their combined corrosion resistance and high mechanical properties. These properties can be improved further by decreasing the content of impurities like carbon and oxygen. The main purpose of this research work is to study the possibility of stainless steel powder decarburization by vacuum annealing. The influence of different process parameters like treatment time, temperature, fraction size and depth of the powder layer on the decarburization process was analyzed. The investigation results showed that it is possible to achieve extra low values of carbon and oxygen in steel powder by processing it with optimum process parameters.
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Weber, J??rgen Wolfgang Photovoltaic &amp Renewable Engergy Engineering UNSW. "Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells." Awarded by:University of New South Wales. Photovoltaic and Renewable Engergy Engineering, 2006. http://handle.unsw.edu.au/1959.4/24847.

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Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times. Polycrystalline silicon (poly-Si, grain size > 1 pm) has the advantage of being non-toxic, abundant, and long-term stable. Glass as a substrate, however, limits the processing temperatures to ~600??C for longer process steps. Films with large grain size can be achieved by solid phase crystallisation (SPC), and especially by solid phase epitaxy (SPE) on seed layers, using amorphous silicon deposited at low temperatures as a precursor film. With SPC and SPE, the amorphous silicon film is typically crystallised at ~600??C over hours. During this anneal at atmospheric pressure -depending on the properties of the amorphous silicon film- ambient gas can percolate the film and can negatively affect the crystallisation. In this work, a high-vacuum anneal chamber was designed and built to allow the in-situ crystallisation of amorphous silicon films deposited on glass in a PECVD cluster tool. An important aspect of the design was the comfortable and safe operation of the vacuum anneal chamber to enable unattended operation. This was realised by means of a state-of-the-art, programmable temperature controller and a control circuit design that incorporates various safety interlocks. The chamber interior was optimised such that a temperature uniformity of 2-3K across the sample area was achieved. The chamber was calibrated and tested, and SPC and SPE samples were successfully crystallised. In initial SPC crystallisation experiments with solar cell structures, after post-deposition treatments, a 1 -sun open-circuit voltage of 465 mV was obtained, similar to furnace-annealed samples. In initial experiments with SPE solar cell structures, difficulties regarding the characterisation of the unmetallised solar cells with the quasi-steady-state open-circuit voltage method (QSSVOC) were encountered after post-deposition hydrogen treatment. A possible explanation for these difficulties is the contact formation with the metal probes. Furthermore, limiting factors of the QSSVOC method for the characterisation of unmetallised cells with high contact resistance values were investigated and, additionally, the accuracyof the QSSVOC setup was improved in the low light intensity range.
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Мартемьянов, Н. А., and N. A. Martemyanov. "Измерительный комплекс на базе модульной микрозондовой платформы для изучения электрофизических характеристик : магистерская диссертация." Master's thesis, б. и, 2020. http://hdl.handle.net/10995/94612.

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Для изучения электрофизических свойств широкозонных полупроводников собран модуль оптической стимуляции в микрозондовой станции CascadeMicrotechMPS150.Стимуляция производится светом полупроводникового лазера с длиной волны 532 нм. Управление лазером производится непосредственно из программы измерения характеристик материалов (написанной в среде LabView) и позволяет изменять мощность от 2 до 225 мВт/с путем изменения скважности управляющих импульсов. Разработан и собран модуль подогрева образца в микрозондовой станции CascadeMicrotechMPS150.Модуль имеет независимое от измерительного тракта управление нагревом и позволяет нагревать образец до 120 °С за 7,5 мин и поддерживать температуру образца с точностью до 0,1 °С. Разработан и собран модуль высокотемпературного отжига материалов. Модуль состоит из двух независимых блоков нагрева (950 ° С и 1300 °С)и позволяет производить отжиг материалов в вакууме и различных газовых средах. Максимальные размеры образца‒(Д х В х Ш, мм) –50х10х10, скорость нагрева в первом блоке до 950°С ‒7.5 мин., во втором до 1200°С‒103 минуты.
To study the electrophysical properties of wide-gap semiconductors, an optical stimulation module was assembled in a Cascade Microtech MPS 150 microprobe station. Stimulation is performed by the light of a semiconductor laser with a wavelength of 532 nm. The laser is controlled directly from the program for measuring the characteristics of materials (written in the LabView environment) and allows you to change the power from 2 to 225 mW / s by changing the duty cycle of the control pulses. A sample heating module was developed and assembled in the Cascade Microtech MPS 150 microprobe station. The module has heating control independent of the measuring path and allows heating the sample to 120 ° C in 7.5 minutes and maintaining the temperature of the sample with an accuracy of 0.1 ° C.A module for high‒temperature annealing of materials was developed and assembled. The module consists of two independent heating units (950 ° C and 1300 ° C) and allows annealing of materials in vacuum and various gaseous media. The maximum dimensions of the sample ‒ (L x W x H, mm) are 50x10x10, the heating rate in the first block to 950 ° C is 7.5 minutes, in the second to 1200 ° C for 103 minutes.
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4

Sojoudi, Hossein. "The synthesis, doping, and characterization of graphene films." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50125.

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Graphene, a two-dimensional counterpart of three-dimensional graphite, has attracted significant interest, due to its distinctive electrical and mechanical properties, for developing electronic, optoelectronic, and sensor technologies. In general, doping of graphene is important, as it gives rise to p-type and n-type materials, and it adjusts the work function of the graphene. This adjustment is necessary in order to control charge injection and collection in devices such as solar cells and light emitting devices. Current methods for graphene doping involve high temperature process or interactions with chemicals that are not stable. Moreover, the process of transferring graphene from its growth substrate and its exposure to the environment results in a host of chemical groups that can become attached to the film and alter its electronic properties by accepting or donating electrons/holes. Intentional and controllable doping of the graphene, however, requires a deeper understanding of the impact of these groups. The proposed research will attempt to clarify the unintentional doping mechanism in graphene through adsorption or desorption of gas/vapor molecules found in standard environments. A low temperature, controllable and defect-free method for doping graphene layers will also be studied through modifying the interface of graphene and its support substrate with self-assembled monolayers (SAMs) which changes the work function and charge carriers in the graphene layer. Furthermore, current methods of chemical vapor deposition synthesis of graphene requires the film to be transferred onto a second substrate when the metal layer used for growth is not compatible with device fabrication or operation. To address this issue, the proposed work will investigate a new method for wafer scale, transfer-free synthesis of graphene on dielectric substrates using new carbon sources. This technique allows patterned synthesis on the target substrate and is compatible with standard device fabrication technologies; hence, it opens a new pathway for low cost, large area synthesis of graphene films.
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CHOLLET, FREDERIC. "Epitaxie à basse température de couches silicium et Si(1-x)Gex : étude par microscopie à force atomique." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10183.

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Les couches epitaxiees a basse temperature (<650c) offrent des perspectives interessantes en vue de la fabrication de dispositifs microelectroniques sophistiques, integrant des structures fragiles comme des profils de dopants tres minces ou des films heteroepitaxies metastables. Ces couches doivent etre structuralement parfaites afin d'atteindre les caracteristiques electriques attendues. Ce travail est motive par l'etude de la morphologie de surface de couches epitaxiales de si et si#1#-#xge#x deposees sur si(100) par cvd a basse temperature (550-800c). La caracterisation physique a principalement ete effectuee par microscopie a force atomique (afm). La preparation de surface des substrats avant epitaxie est une etape critique. C'est pourquoi la surface du si(100) a ete etudiee apres nettoyage par voie humide et apres recuit sous hydrogene vis a vis de la nano-rugosite, des terminaisons atomiques et des contaminants adsorbes. Les premiers instants de l'homoepitaxie de si ont ete etudies en detail. Deux modes de croissance (l'un lisse l'autre rugueux) dependant a la fois des parametres de substrat et de depot sont observes. Le mode lisse se caracterise par une croissance en terraces, alors que le mode rugueux correspond a une croissance par facettage. La morphologie de surface resultante a ete reliee a la couverture dynamique en hydrogene du front de croissance. D'autres mecanismes de croissance entrent en jeu dans les films si#1#-#xge#x en raison des contraintes existantes. Des films de si#1#-#xge#x contraints en compression et en tension ont ete etudies. Les films en compression presentent une croissance stranski-krastanov sans defaut permettant une relaxation partielle de la contrainte au travers d'ondulations de surface. Pour les films en tension, la topographie finale depend fortement de la diffusion de surface des ad-atomes.
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Huang, Bo-Ching, and 黃柏青. "Vacuum annealing effect on magnetoresistance of Co/TiO2 nanocomposite." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/49713992860664734230.

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碩士
國立成功大學
物理學系碩博士班
96
In this work, we synthesize nanocomposite under ultra-high vacuum which has high density defects. We observe little change to magnetoresistance(MR)when samples were annealing under ultra high vacuum environment(10-9 torr). However, apparent change of MR is observed under high vacuum annealing (10-6 torr). Structure of Co/TiO2 nanocomposite has characterized by XRD and XAS. The change of blocking temperature doesn’t have the corresponding result with MR which indicates that Co particles may not be main reason. Analysis of impedance spectra and temperature-dependent resistivity show that oxide layer have the great influence to the change of MR. In summary, we think that observed magnetoresistance change in different vacuum annealing was attributed to defects.
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Lai, Jian-Hong, and 賴建宏. "Effects of High-Vacuum Annealing on The Photoelectric Properties of ZnO:Fe Films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/16660569002212742897.

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碩士
大葉大學
電機工程學系
95
ZnO:Fe films were grown by the RF magnetrom sputtering technique. In this work we studied the effects of high-vacuum annealing on the conductivity、carrier concentration、mobility、transmittance and magnetization of ZnO:Fe films. The electron spectroscopy for chemical analyses (ESCA) was used to analyze the chemical states of ZnO:Fe thin films. The sputtering parameters were adjusted and employed to obtain the optimum electro-optical properties of ZnO:Fe thin films. The optimum conditions for the growth of 150-nm thick ZnO:Fe films are obtained with ZnO RF power = 30 W、Fe RF power = 10 W、working pressure = 1 mTorr、annealing pressure=8.5×10-6 torr and annealing temperature of 510 ℃、for 60 mins. As a result, we have successfully achieved the lowest resistivity of 2.24×10-3 Ωcm, and the carrier concentration of 2.78×1021 cm-3 with the mobility of 1.01 cm2/Vs. The average optical transmittance within the visible spectra is higher than 92.35 %. The ESCA analysis reveals that the valence of Fe is triplicate. Moreover, the resistivity is reduced with the increase of the grain size, being consistent with the prediction of grain-boundary-scattering model.
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"Thickness and vacuum annealing effects in single-crystal La₀.₆₇Ca₀.₃₃MnO3 thin films." 2000. http://library.cuhk.edu.hk/record=b5890521.

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Yeung Chun Fai = 厚度和眞空熱處理對單晶 La0.67Ca0.33MnO3 薄膜特性之影響 / 楊進輝.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2000.
Includes bibliographical references.
Text in English; abstracts in English and Chinese.
by Yeung Chun Fai = Hou du he zhen kong re chu li dui dan jing La0.67Ca0.33MnO3 bo mo te xing zhi ying xiang / Yang Jinhui.
Acknowledgements --- p.i
Abstract --- p.ii
論文摘要 --- p.iv
Table of contents --- p.v
List of Figures --- p.viii
List of Tables --- p.xiii
Chapter Chapter I --- Introduction
Chapter 1.1 --- Development of magnetoresistance materials --- p.1-1
Chapter 1.1.1 --- Magnetoresistance (MR) --- p.1-1
Chapter 1.1.2 --- Anisotropy magnetoresistance (AMR) --- p.1-1
Chapter 1.1.3 --- Giant magnetoresistance (GMR) --- p.1-2
Chapter 1.1.4 --- Colossal magnetoresistance (CMR) in rare-earth manganites --- p.1-3
Chapter 1.1.5 --- Possible origin of CMR in rare-earth manganites --- p.1-4
Chapter 1.1.5.1 --- Double exchange mechanism --- p.1-4
Chapter 1.1.5.2 --- Jahn-teller effect --- p.1-6
Chapter 1.1.5.3 --- Other mechanisms --- p.1-7
Chapter 1.1.6 --- Possible origins of CMR in Thallium manganite pyrochlores (TI2Mn207) --- p.1-7
Chapter 1.2 --- New developments in manganite materials --- p.1-8
Chapter 1.3 --- Our approach --- p.1-8
Chapter 1.3.1 --- Why choose La0 .67Ca0.33Mn03 material? --- p.1-8
Chapter 1.3.2 --- The role of oxygen content in manganite materials --- p.1-9
Chapter 1.4 --- The scope of this thesis work --- p.1-11
References --- p.1-12
Chapter Chapter II --- Instrumentation
Chapter 2.1 --- Thin film deposition --- p.2-1
Chapter 2.1.1 --- Introduction --- p.2-1
Chapter 2.1.2 --- Facing-target sputtering (FTS) --- p.2-3
Chapter 2.1.3 --- Deposition profile calculation for sputtering with FTS --- p.2-4
Chapter 2.1.4 --- Vacuum system --- p.2-7
Chapter 2.2 --- Characterization --- p.2-8
Chapter 2.2.1 --- Profilometer --- p.2-8
Chapter 2.2.2 --- Atomic force microscopy (AFM) --- p.2-8
Chapter 2.2.3 --- X-ray diffraction (XRD) --- p.2-8
Chapter 2.2.4 --- Resistance and magnetoresistance measurement --- p.2-10
Chapter 2.2.5 --- Hall effect measurement --- p.2-11
References --- p.2-13
Chapter Chapter III --- Epitaxial growth of La0.67Ca0.33 Mn03 thin films
Chapter 3.1 --- Introduction --- p.3-1
Chapter 3.2 --- Fabrication and characteristics of LCMO target --- p.3-1
Chapter 3.3 --- Substrate materials --- p.3-5
Chapter 3.4 --- Deposition --- p.3-10
Chapter 3.4.1 --- Sample preparation --- p.3-10
Chapter 3.4.2 --- Substrate temperature --- p.3-10
Chapter 3.4.3 --- Deposition process --- p.3-17
Chapter 3.5 --- Post-annealing effect --- p.3-18
Chapter 3.6 --- Film composition analysis --- p.3-22
Chapter 3.7 --- Epitaxial growth examination --- p.3-22
References --- p.3-27
Chapter Chapter IV --- Thickness effect in single-crystal LCMO thin films grown on NGO and STO
Chapter 4.1 --- Motivation --- p.4-1
Chapter 4.2 --- Resistance measurement --- p.4-2
Chapter 4.3 --- Magnetoresistance (MR) --- p.4-8
Chapter 4.4 --- Crystal structure --- p.4-12
Chapter 4.5 --- Surface morphology --- p.4-16
Chapter 4.6 --- Hall effect measurement --- p.4-19
Chapter 4.6.1 --- Basic principle --- p.4-19
Chapter 4.6.2 --- Experiment --- p.4-20
Chapter 4.6.3 --- Carrier concentration & mobility --- p.4-20
Chapter 4.7 --- Discussions --- p.4-25
References --- p.4-27
Chapter Chapter V --- Strain dependent vacuum annealing effectin single-crystal La0.67Ga0.33MnO3 thin films
Chapter 5.1 --- Motivation --- p.5-1
Chapter 5.2 --- Sample description --- p.5-1
Chapter 5.3 --- Vacuum annealing process --- p.5-2
Chapter 5.4 --- Crystal structure --- p.5-2
Chapter 5.5 --- Resistance measurement --- p.5-6
Chapter 5.6 --- Discussions --- p.5-8
Chapter 5.6.1 --- Lattice expansion --- p.5-8
Chapter 5.6.2 --- Determination of oxygen content --- p.5-9
References --- p.5-11
Chapter Chapter VI --- Activation energy of small polaron in La0.67Ca0.33MnO3 thin films
Chapter 6.1 --- Motivation --- p.6-1
Chapter 6.2 --- Basic theory --- p.6-1
Chapter 6.2.1 --- Variable range hopping --- p.6-1
Chapter 6.2.2 --- Semiconduction --- p.6-2
Chapter 6.2.3 --- Nearest-neighbor hoping of small polarons --- p.6-2
Chapter 6.3 --- Sample description --- p.6-3
Chapter 6.4 --- Resistance measurement --- p.6-4
Chapter 6.5 --- Activation energy --- p.6-4
Chapter 6.6 --- Discussions --- p.6-5
References --- p.6-12
Chapter Chapter VII --- Conclusions --- p.7-1
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"Vacuum annealing effect of Fe₃₋xZnxO₄ thin films and trilayer magnetic tunneling junction." 2006. http://library.cuhk.edu.hk/record=b5893053.

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Lee Wai Tak Joseph = Fe₃₋xZnxO₄的真空熱處理效應及磁隧道結 / 李懷德.
On t.p. "-x" and "x" is subscript.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2006.
Includes bibliographical references.
Text in English; abstracts in English and Chinese.
Lee Wai Tak Joseph = Fe₃₋xZnxO₄ de zhen kong re chu li xiao ying ji ci sui dao jie / Li Huaide.
Acknowledgement --- p.i
Abstract --- p.ii
論文摘要 --- p.iii
Table of contents --- p.iv
List of Figures --- p.ix
List of Tables --- p.xiv
Table of Contents
Chapter Chapter 1 --- Introduction
Chapter 1.1 --- Introduction to Magnetite Fe3O4 and Zinc Ferrite Fe3.-xZnxO4 --- p.1-1
Chapter 1.1.1 --- Crystal structure and Properties of Fe304 and Fe3-xZnxo4 --- p.1-1
Chapter 1.1.2 --- Transformation of Iron Oxides --- p.1-6
Chapter 1.2 --- Verwey transition --- p.1-10
Chapter 1.2.1 --- Introduction --- p.1-10
Chapter 1.2.2 --- Charge-orbital ordering --- p.1-15
Chapter 1.3 --- Trilayer Magnetic Tunneling Junction (MTJ) --- p.1-18
Chapter 1.3.1 --- Half-metallic Fe3O4 --- p.1-18
Chapter 1.3.2 --- Tunneling Magnetoresistance (TMR) --- p.1-19
Chapter 1.4 --- Research Motivation --- p.1-20
Chapter 1.5 --- Scope of this thesis --- p.1-21
References --- p.1-22
Chapter Chapter 2 --- Instrumentation
Chapter 2.1 --- Sample Preparation --- p.2-1
Chapter 2.1.1 --- Vacuum System --- p.2-1
Chapter 2.1.2 --- Facing-target Sputtering (FTS) Technique --- p.2-3
Chapter 2.2 --- Sample Treatment --- p.2-7
Chapter 2.2.1 --- Vacuum Annealing (VA) --- p.2-7
Chapter 2.2.2 --- Silver Electrode Coating System --- p.2-9
Chapter 2.3 --- Sample Characterization --- p.2-11
Chapter 2.3.1 --- Four-point-probe DC Resistivity Measurement --- p.2-11
Chapter 2.3.2 --- Current-Voltage Measurement (IV) --- p.2-11
Chapter 2.3.3. --- X-ray Diffraction (XRD) --- p.2-13
Chapter 2.3.4 --- X-ray Fluorescence (XRF) Method --- p.2-14
Chapter 2.3.5 --- Alpha-step Surface Profiler --- p.2-14
Chapter 2.3.6 --- Atomic Force Microscope (AFM) --- p.2-15
References --- p.2-16
Chapter Chapter 3 --- Fabrication of Fe3- xZnxO4Thin Films
Chapter 3.1 --- Thin Film Deposition --- p.3-1
Chapter 3.1.1 --- Review of Deposition Procedures --- p.3-1
Chapter 3.1.2 --- Preparation of Substrates --- p.3-6
Chapter 3.1.3 --- Deposition of Fe3-xZnxO4 thin films --- p.3-7
Chapter 3.2 --- Characterization of Fe3-xZnxO4 thin films --- p.3-9
Chapter 3.2.1 --- Surface Morphology --- p.3-9
Chapter 3.2.2 --- Temperature-Dependent Resistivity Measurement --- p.3-11
Chapter 3.3 --- Factors affecting the Quality of films --- p.3-18
Chapter 3.3.1 --- Effect of Substrates --- p.3-18
Chapter 3.3.2 --- Effects of Sputtering Power --- p.3-21
Chapter 3.3.3 --- Effects of Temperature --- p.3-24
Chapter 3.3.4 --- Effects of Thickness --- p.3-29
Chapter 3.4 --- Chapter summary --- p.3-32
References --- p.3-33
Chapter Chapter 4 --- Vacuum Annealing of Fe3-xZnxO4 Thin Films
Chapter 4.1 --- Introduction --- p.4-1
Chapter 4.2 --- Post-Annealing Effect in the Presence of Oxygen --- p.4-6
Chapter 4.3 --- Vacuum Annealing of Fe3-xZnx04 thin films --- p.4-12
Chapter 4.3.1 --- First Stage of Vacuum Annealing --- p.4-12
Chapter 4.3.2 --- Second Stage of Vacuum Annealing --- p.4-17
Chapter 4.3.3 --- Third Stage of Vacuum Annealing --- p.4-25
Chapter 4.4 --- Chapter summary --- p.4-32
References --- p.4-33
Chapter Chapter 5 --- Trilayer Magnetic Tunneling Junction (MTJ)
Chapter 5.1 --- Introduction --- p.5-1
Chapter 5.2 --- Fabrication of Trilayer Magnetic Tunneling Junction --- p.5-3
Chapter 5.3 --- Tunneling Magnetoresistance (TMR) --- p.5-5
Chapter 5.3.1 --- Current-Voltage Characteristic Curve (IV curve) --- p.5-5
Chapter 5.3.2 --- Magnetoresistance Measurement --- p.5-8
References --- p.5-10
Chapter Chapter 6 --- Conclusions
Chapter 6.1 --- Conclusions --- p.6-1
Chapter 6.2 --- Further research --- p.6-2
References --- p.6-3
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Tseng, An-ping, and 曾安平. "Defect Reduction of Carbon Nanotubes by Rapid Thermal Annealing via Vacuum Arc Discharge." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/38714088469174374337.

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Abstract:
碩士
大同大學
光電工程研究所
96
Carbon nanotubes (CNTs) give impetus to the research of carbon-based materials because of their singular properties for numerous fields, especially for the application of electronic devices. Multi-walled carbon nanotubes (MWNTs) synthesized by low temperature chemical vapor deposition (CVD) method have defects which can affect electrons transport and reduce the conductivity. In this thesis, vacuum arc rapid thermal annealing (VARTA) approach proposed to reduce the defect structures of MWNTs is to substitute the conventional furnace annealing. Two topics were investigated; Firstly, the defected MWNTs were annealed by heating and cooling in several cycles rapidly. The process is controlled by heating of vacuum arc and cooling of high flow Ar purging. The imperfect structures can be annealed out with high arc current, high flow of Ar, and annealing cycles. Secondly, the oxygen effect of defected MWNTs was studied. The MWNTs were annealed in the chamber which filled with water in low vacuum environment. Besides, we even added Al2O3 powder mixed with samples to discuss the oxidation of MWNTs. The results indicated that the oxygen played an important part to modify the defects in the MWNTs. According to the results found from Raman spectra, the ratio of intensity of G-band peak to that of D-band peak increased by VARTA process and oxidation. The morphology of MWNTs was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM).
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Books on the topic "Vacuum annealing"

1

Miyoshi, Kazuhisa. Surface chemistry, friction, and wear properties of untreated and laser-annealed surfaces of pulsed-laser-deposited WS₂ coatings. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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Miyoshi, Kazuhisa. Surface chemistry, friction, and wear properties of untreated and laser-annealed surfaces of pulsed-laser-deposited WS₂ coatings. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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Book chapters on the topic "Vacuum annealing"

1

Nagoshi, Masayasu, Yasuo Fukuda, Ayako Tokiwa, Junichi Murata, Noriaki Sanada, Teruo Suzuki, Yasuhiko Syono, and Masashi Tachiki. "Oxygen Loss from Bi2Sr2CaCu2Oy by Annealing in Vacuum." In Advances in Superconductivity III, 407–10. Tokyo: Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_90.

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2

Kauk, M., M. Altosaar, and J. Raudoja. "Influence Of Vacuum Annealing On The Composition Of CuInSe2." In Photovoltaic and Photoactive Materials — Properties, Technology and Applications, 337–39. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0632-3_35.

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Low, I. M., and W. K. Pang. "Diffraction Study of Self-Recovery in Decomposed Al2TiO5 During Vacuum Annealing." In Advanced Ceramic Coatings and Materials for Extreme Environments, 169–75. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118095232.ch15.

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Novikov, A. P., E. A. Shilova, L. D. Buiko, and V. A. Zaikov. "Thermal Stability and Structural Reactions at the Tantalum /a-C Interface under Vacuum Annealing Conditions." In Wide Band Gap Electronic Materials, 265–70. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0173-8_27.

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Gab, I. I., T. V. Stetsyuk, B. D. Kostyuk, O. M. Fesenko, and D. B. Shakhnin. "Dispersing of Molybdenum Nanofilms at Non-metallic Materials as a Result of Their Annealing in Vacuum." In Springer Proceedings in Physics, 425–37. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-17759-1_29.

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Naidich, Y. V., I. I. Gab, T. V. Stetsyuk, B. D. Kostyuk, and V. V. Kavelin. "Influence of Annealing in Vacuum on Dispersion Kinetics of Palladium and Platinum Nanofilms Deposited onto Oxide Materials." In Springer Proceedings in Physics, 457–67. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56422-7_34.

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Li, Xiaobin, and Ding Liu. "Modeling and Optimal for Vacuum Annealing Furnace Based on Wavelet Neural Networks with Adaptive Immune Genetic Algorithm." In Lecture Notes in Computer Science, 922–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/11539117_129.

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Naidich, Y. V., I. I. Gab, T. V. Stetsyuk, B. D. Kostyuk, O. M. Fesenko, and D. B. Shakhnin. "Influence of Annealing in Vacuum on Dispersion Kinetics of Titanium and Zirconium Nanofilms Deposited onto Oxide Materials." In Springer Proceedings in Physics, 487–98. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-92567-7_31.

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Yao, Zhaohui, Tingjin Chen, Chaofeng Xia, Hairong Yuan, Jingtian Li, Hua Liao, and Zuming Liu. "Influence of Substrate Temperature and Vacuum Annealing on the Structural Properties of CDTE(111)/Si(100) Thin Films." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1089–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_213.

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Gab, I. I., T. V. Stetsyuk, B. D. Kostyuk, and Y. V. Naidich. "Influence of Annealing in Vacuum on Kinetics of Dispersion–Coagulation of Niobium and Hafnium Nanofilms Deposited onto Oxide Materials." In Springer Proceedings in Physics, 155–62. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-30737-4_13.

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Conference papers on the topic "Vacuum annealing"

1

Gross, H., O. Khvostikova, and U. Willkommen. "Rapid Thermal Annealing for Large Area Applications." In Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2014. http://dx.doi.org/10.14332/svc14.proc.1825.

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Jianyong Kou, Tiechang Yan, Shilu Zhao, and Qingji Li. "Optimization of CCTWT BWI efficiency using annealing algorithm." In 2008 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2008. http://dx.doi.org/10.1109/ivelec.2008.4556463.

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Yan-Fang Yue, Hui-Zhen Wang, and Hong-Jie Chang. "Research on temperature controller for high vacuum annealing furnace." In 2009 International Conference on Machine Learning and Cybernetics (ICMLC). IEEE, 2009. http://dx.doi.org/10.1109/icmlc.2009.5212741.

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Pritula, Igor M., Marina I. Kolybayeva, Vitaly I. Salo, A. V. Semenov, and Serge V. Garnov. "Annealing of KDP crystals in vacuum and under pressure." In Laser-Induced Damage in Optical Materials: 1996, edited by Harold E. Bennett, Arthur H. Guenther, Mark R. Kozlowski, Brian E. Newnam, and M. J. Soileau. SPIE, 1997. http://dx.doi.org/10.1117/12.274260.

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Li, W. C., S. Roberts, and T. J. Balk. "Effects of annealing on microstructure of osmium-ruthenium thin films." In 2009 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2009. http://dx.doi.org/10.1109/ivelec.2009.5193510.

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Lim, Han Eol, Je Hwang Ryu, Byung Taek Son, Hye Mi Oh, Na Young Bae, Jin Jang, Jong Hyun Moon, Masayuki Nakamoto, and Kyu Chang Park. "Strong atmospheric stability of carbon nanotubes under high temperature annealing." In 2009 22nd International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2009. http://dx.doi.org/10.1109/ivnc.2009.5271625.

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Weiqun, Yuan, Sun Guangsheng, Yan Pin, and Zhang Chunlin. "Annealing Effects on DC Flashover Performance of PMMA in Vacuum." In 2006 Twenty-Seventh International Power Modulator Symposium. IEEE, 2006. http://dx.doi.org/10.1109/modsym.2006.365189.

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Safi, Djamschid, Philip Birtel, Michael Wulff, Sascha Meyne, and Arne F. Jacob. "Back-off efficiency optimization of traveling-wave tubes using simulated annealing." In 2018 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2018. http://dx.doi.org/10.1109/ivec.2018.8391478.

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Meyne, Sascha, Markus Krenz, and Arne F. Jacob. "Taper optimization for helix traveling-wave tubes using adaptive simulated annealing." In 2014 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2014. http://dx.doi.org/10.1109/ivec.2014.6857530.

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Jung, S. I., S. H. Jo, S. K. Choi, J. M. Kim, H. S. Moon, D. S. Zang, and C. J. Lee. "Thermal Annealing Effect on the Field Emission Characteristics of Double-Walled Carbon Nanotubes." In 2006 19th International Vacuum Nanoelectronics Conference. IEEE, 2006. http://dx.doi.org/10.1109/ivnc.2006.335364.

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