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1
Šámal, Petr. "Rákosník firm in Karlín as a factory for architectural decoration. Function, production and importance of the sculptural-stucco firm since the era of Art Nouveau and historicism to the first half of the 20th century." Staletá Praha 34, no. 1 (June 15, 2018): 73–102. http://dx.doi.org/10.56112/sp.2018.1.03.
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Pont, Ulrich, Ulrike Herbig, and Ardeshir Mahdavi. "Performance Enquiries Regarding Traditional and Contemporary Indonesian Architecture: A Holistic Approach." Applied Mechanics and Materials 887 (January 2019): 273–81. http://dx.doi.org/10.4028/www.scientific.net/amm.887.273.
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This contribution sheds light on recent research efforts that pertain to the built environment in Indonesia. Within the rich diversity of cultures in the Nusantara archipelago interesting examples can be found that illustrate the adaptation to the challenging environmental conditions. Through this research the possibilities for sophisticated solutions for future are investigated, focusing on the building performance. Architecture and planning tasks in Indonesia have to consider the following preconditions: (i) The prevailing hot and humid climate, which will be strongly influenced by the climate change in the future; (ii) the country’s geography, which consists of a number of wide-spread islands; (iii) the rich and diverse historical development, including a very diverse architectural heritage; (iv) the location within the “Pacific Ring of Fire”, causing recurring natural disasters (e.g. volcano eruptions, earthquakes); (v) a currently ongoing rapid change in socioeconomic key data (economic growth rate, population growth, digitalization); (vi) a strong tendency to urbanization. Whereas these facts are known, as well as the need for energy efficient buildings, the level of knowledge about the performance of buildings in different regions of Indonesia is rather limited. Specifically, regional building traditions are often treated only in historical discourse. Thus, an interdisciplinary research effort that aims to examine Indonesian architecture in a comprehensive and holistic way has been undertaken in the past years, based on works dating back to 2005. In this paper we present parts of these efforts, namely (i) the assessment of a contemporary art museum in the city of Yogyakarta using monitored indoor conditions, and conception of potential future improvement; (ii) Further data collection efforts currently performed on a number of traditional residential buildings, (iii) a review of current, exemplary re-development efforts including the utilization and adaptation of traditional architectural concepts in Indonesia, and (iv) the details of the recently started incentive on interdisciplinary research on Indonesian architecture.
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Kim, Kyung-Tae, Seung-Han Kang, Seung-Ji Nam, Chan-Yong Park, Jeong-Wan Jo, Jae-Sang Heo, and Sung-Kyu Park. "Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture." Applied Sciences 11, no. 12 (June 14, 2021): 5501. http://dx.doi.org/10.3390/app11125501.
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A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared to conventional substrates. Based on the results, a conventional photolithography process was employed to implement the reverse-trapezoid homogeneous structures using a negative photoresist (NPR). Simply accessible photolithography using NPR enabled high-resolution patterning and thus large-area scalable device architectures could be obtained. The a-IGZO TFTs on the reverse-trapezoid-structured PDMS exhibited a maximum saturation mobility of 6.06 cm2V−1s−1 under a drain bias voltage of 10 V with minimal strain stress. As a result, the proposed a-IGZO TFTs, including stress-released architecture, exhibited highly enhanced mechanical properties, showing saturation mobility variation within 12% under a strain of 15%, whereas conventional planar a-IGZO TFTs on PDMS showed mobility variation over 10% even under a 1% strain and failed to operate beyond a 2% strain.
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Takeda, Fumiomi, Gerard Krewer, Changying Li, Daniel MacLean, and James W. Olmstead. "Techniques for Increasing Machine Harvest Efficiency in Highbush Blueberry." HortTechnology 23, no. 4 (August 2013): 430–36. http://dx.doi.org/10.21273/horttech.23.4.430.
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Northern highbush (NH) blueberry (Vaccinium corymbosum) and southern highbush (SH) blueberry (V. corymbosum hybrids) have fruit that vary in firmness. The SH fruit is mostly hand harvested for the fresh market. Hand harvesting is labor-intensive requiring more than 500 hours/acre. Rabbiteye blueberry (V. virgatum) tends to have firmer fruit skin than that of NH blueberry and has been mostly machine harvested for the processing industry. Sparkleberry (V. arboreum) has very firm fruit. With the challenges of labor availability, efforts are under way to produce more marketable fruit using machine harvesting. This could require changing the design of harvesting machine and plant architecture, and the development of cultivars with fruit that will bruise less after impact with hard surfaces of machines. The objectives of this study were to determine the fruit quality of machine-harvested SH blueberry, analyze the effect of drop height and padding the contact surface on fruit quality, investigate the effect of crown restriction on ground loss, and determine the effect of plant size on machine harvestability. The fruit of ‘Farthing’, ‘Scintilla’, ‘Sweetcrisp’, and several selections were either hand harvested or machine harvested and assessed during postharvest storage for bruise damage and softening. Machine harvesting contributed to bruise damage in the fruit and softening in storage. The fruit of firm-textured SH blueberry (‘Farthing’, ‘Sweetcrisp’, and selection FL 05-528) was firmer than that of ‘Scintilla’ after 1 week in cold storage. Fruit drop tests from a height of 20 and 40 inches on a plastic surface showed that ‘Scintilla’ was more susceptible to bruising than that of firm-textured ‘Farthing’ and ‘Sweetcrisp’. When the contact surface was cushioned with a foam sheet, bruise incidence was significantly reduced in all SH blueberry used in the study. Also, the fruit dropped 40 inches developed more bruise damage than those dropped 20 inches. Ground loss during machine harvesting was reduced from 24% to 17% by modifying the rabbiteye blueberry plant architecture. Further modifications to harvesting machines and plant architecture are necessary to improve the quality of machine-harvested SH and rabbiteye blueberry fruit and the overall efficiency of blueberry (Vaccinium species and hybrids) harvesting machines.
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Partawijaya, Yan. "MANAJEMEN PEMELIHARAAN GEDUNG E, G, K DAN V POLITEKNIK NEGERI PADANG." Jurnal Ilmiah Poli Rekayasa 17, no. 2 (April 30, 2022): 50. http://dx.doi.org/10.30630/jipr.17.2.232.
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Building maintenance is a very important to do after a building is completed or used. Maintenance makes of the building longer, safety, strength and appearance. Maintenance can reduce damage to the building, comfort and safety for all building users. Analysis of the maintenance management buildings E, G, K and V Politeknik Negeri Padang for 2023, maintenance schedule for buildings E, G, K and V Politeknik Negeri Padang for structural, architectural and utility components is divided daily, weekly, monthly and yearly intervals. Time periode, daily maintenance includes work on floors, walls, ceilings, doors, windows, frames, clean water installations, security installations, sanitary equipment and electrical installations. Maintenance periode of weekly and monthly intervals includes the work of structures, floors, walls, doors, frames, clean water installations and air conditioning installations. Annual periodic maintenance includes work on structures, walls, ceilings, doors, frames, air conditioning installations, fire protection installations and security installations. The maintenance cost of buildings E, G, K and V Politeknik Negeri Padang Rp. 810,834,743.17 with the cost of structural components of Rp. 84,443.56, architectural components of Rp. 651,660,899.61 and utility components of Rp. 159,089,400.00.
Keywords: Buildings, Maintenance, Time periode, Cost
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Shih, Andy, and Akintunde Ibitayo Akinwande. "Solution-Processed High-Voltage Organic Thin Film Transistor." MRS Advances 2, no. 51 (2017): 2961–66. http://dx.doi.org/10.1557/adv.2017.359.
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ABSTRACTA 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility μ of 0.005 cm2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C.
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Shahruddin, Syafizal. "A SYSTEMATIC REVIEW OF BIM REQUIREMENTS THROUGHOUT A WHOLE LIFE CYCLE OF A PROJECT." Asia Proceedings of Social Sciences 4, no. 1 (April 18, 2019): 164–67. http://dx.doi.org/10.31580/apss.v4i1.682.
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Research Highlights
In this systematic review, we attempt to defend a view that the full potential of building information modelling (BIM) in enabling sustainable design and construction could transpire only through an in-depth understanding of every required component of BIM requirements across a construction project lifecycle. The findings from the study add to the body of literature by expanding the required components of BIM requirements through the amalgamation of variables that reside within the General Practitioners Information System (including IT infrastructure, process, people and environment) (Saleh and Alshawi, 2005) and the protocols for a BIM-collaborative design framework (including policy, process, and technology) (Kassem et al., 2014). The most striking result to emerge from the study is the process requirements of BIM. The fact that the accuracy and reliability of the information produced, shared, and reused across the construction project lifecycle may be affected without having a BIM process map and procedure for each of the BIM core activities being in place.
Research Objectives
Much of the discussion on BIM implementation centres on the required set of BIM requirements and specifications that should be delivered throughout a whole lifecycle of a project (Farzaneh, Monfet, & Forgues, 2019; Gao & Pishdad-Bozorgi, 2019; Ibrahim & Kingdom, 2013; Kamel & Memari, 2019; Parllaku & Underwood, 2017; Sacks, Gurevich, & Shrestha, 2016). Yet, very few studies have attempted to systematically review every aspect of BIM requirements from the perspective of policy, process, technology, environment and people-related interlocking pillars. The review by Farzaneh, Monfet, and Forgues (2019) and Kamel and Memari (2019) disregarded the legal and process aspects of BIM requirements and included only the technical requirements of BIM technology. In another review study, Sacks, Gurevich, and Shrestha (2016) drew conclusions from the review of BIM protocols, guides and standards and not from the existing emprical studies in supporting the emerging findings of BIM requirements obtained through the BIM-based documents. This gap necessitates the present study to holistically define the required components of BIM requirements by extending the base knowledge of BIM requirements as defined by Saleh and Alshawi (2005) and Kassem et al. (2014).
Methodology
The study employed PRISMA-P (Preferred Reporting Items for Systematic reviews and Meta-Analyses) (Moher et al., 2009) by first identifying related literature in the Web of Science, Scopus, and specific top-ranked journals covering BIM area of research. The following sets of keywords were used: (1) body of knowledge (including requirements, specifications and deliverables); (2) field area (including BIM, “building information modelling,†“building information model,†“building information modelling and management,†“collaborative BIM,†“integrated BIM,†“level 2 BIM,†and “level 3 BIMâ€) and (3) context (including organisation, firm, SMEs, industry, “construction industry,†AEC, macro, micro, and project). The initial search produced a list of 423 records, but 24 records were removed because of duplication. The remaining 399 articles were screened based on the following criteria, among others: publication types (research articles), language (English publications), and year (publication from 2005 to 2019). Finally, an eligibility screening was conducted to finalise the relevant literature for the qualitative thematic analysis. The total number articles finalised for analysis in ATLAS.ti 8 was 39.
Results
The review of the study uncovered five main pillars and 41 subpillars of BIM requirements throughout a whole lifecycle of a project. The six main pillars are process (P1) (16 subpillars), policy (P2) (7 subpillars), technology (P3) (6 subpillars), environment (P4) (6 subpillars), and people (P5) (6 subpillars). Process requirements of BIM have been the primary focus of previous studies (n=29), from which the following 16 subpillars emerged under the “process†pillar (P1): (i) benchmarking practices; (ii) BIM implementation plan; (iii) BIM model deliverables; (iv) BIM lifecycle process map; (v) BIM uses process map; (vi) BIM-information delivery manuals (IDM); (vii) COBIE; (viii) cost implementation plan; (viv) digital data management; (x) identification of project team’s capability; (xi) mobilisation; (xii) pilot project; (xiii) process flow redesign; (xiv) quality assurance; (xv) scoping activities and purpose and (xvi) risk management. Furthermore, majority of of the reviewed articles (n=25) discuss the policy pillar (P2) of BIM requirements, which further consist of the following seven subpillars: (i) BIM based documents; (ii) BIM execution plan; (iii) collaboration requirements; (iv) contractual documents; (v) employer information requirements; (vi) intellectual property and (vii) obligation of stakeholders. Meanwhile, sub-pillars including (i) BIM object library; (ii) collaboration server; (iii) ICT infrastructure; (iv) interoperability; (v) technical support and (vi) vendor evaluation have emerged across 23 studies under the technological requirements of BIM (P3). Also, in regard to the environment pillar (P4), the following six subpillars are discussed across 13 studies: (i) BIM research and development; (ii) incentives and reward; (iii) IT vison and mission; (iv) knowledge management; (v) organisational culture and (vi) senior leadership. Finally, the following six sub-pillars emerged within the people pillar (P5) of BIM requirements: (i) BIM competence; (ii) organisation experience; (iii) qualification; (iv) roles and responsibilities; (v) staff experience and (vi) training and education.
Findings
In can be concluded from the study that striking a balance between fulfilling the required components that reside within the process, policy, technology, environment, and people pillars of BIM requirements is crucial in achieving the full benefits of BIM adoption throughout a construction project lifecycle. Despite the policy and process requirements of BIM being the focus of discussion in previous studies, very few have attended to the investigation of people-related requirements of BIM, hence providing an avenue for further study. BIM adoption can no longer be viewed as a technological challenge but rather a strategy that requires organisational, managerial, and operational changes within the traditional practices. This shift would require the existing architectural, engineering and construction (AEC) industry players to equip themselves with different skill sets in order to remain competitive in the AEC industry sector.
Acknowledgment
The authors acknowledge the Ministry of Higher Education Malaysia (MOHE) and Universiti Sains Malaysia (USM) for funding the study. Credit also goes to Universiti Putra Malaysia, supervisors, and all lecturers for supporting this research.
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Olmstead, James W., and Chad E. Finn. "Breeding Highbush Blueberry Cultivars Adapted to Machine Harvest for the Fresh Market." HortTechnology 24, no. 3 (June 2014): 290–94. http://dx.doi.org/10.21273/horttech.24.3.290.
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In recent years, world blueberry (Vaccinium sp.) production has been split evenly between processing and fresh fruit markets. Machine harvest of highbush blueberry {northern highbush blueberry [NHB (V. corymbosum)], southern highbush blueberry [SHB (V. corymbosum interspecific hybrids)], and rabbiteye blueberry [RE (V. virgatum)]} typically has been used to obtain large volumes of fruit destined for processing. Because of financial and labor concerns, growers are interested in using machine harvesting for fruit destined to be fresh marketed. Bush architecture, harvest timing, loose fruit clusters, easy detachment of mature berries compared with immature berries, no stem retention, small stem scar, a persistent wax layer, and firm fruit are breeding goals to develop cultivars amenable to machine harvest. Progress in selecting for these traits has been made in existing highbush blueberry breeding programs, but will likely intensify as the need for cultivars suitable for machine harvest for the fresh market increases.
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Chen, XinYi, Alan M. C. Ng, Aleksandra B. Djurišić, Chi Chung Ling, Wai-Kin Chan, Wai Keung Fong, Hsian Fei Lui, and Charles Surya. "Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes." MRS Proceedings 1439 (2012): 109–14. http://dx.doi.org/10.1557/opl.2012.1466.
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ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.
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Wan Ibrahim, Mohd Haziman, Mohd Nasir Abdul Hadi, and Yee Hooi Min. "Soap Film of Tensioned Fabric Structure in the Form of Handkerchief Surface." Journal of Mechanical Engineering 16, no. 3 (December 31, 2019): 41–50. http://dx.doi.org/10.24191/jmeche.v16i3.15342.
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Form-finding has to be carried out for tensioned fabric structure in order to determine the initial equilibrium shape under prescribed support condition and pre-stress pattern. Tensioned fabric structures are normally designed to be in the form of equal tensioned surface. Tensioned fabric structure is highly suited to be used for realizing the surfaces of complex or new forms. However, the research study on a new form as a tensioned fabric structure has not attracted much attention. Alternative source of inspiration of minimal surface which could be adopted as form for tensioned fabric structure is very crucial. The aim of this study is to investigate initial equilibrium shape of tensioned fabric structures in the form of Handkerchief surface, u=v=0.2 and u=v=1.2. Experimental form-finding using soap film model is frequently used to develop the possible form of uniformly stressed surfaces. Apart from that, soap film model also provides a means for checking the accuracy of computational form-finding results. In this study, soap film model is used to investigate surface form corresponding to boundary shape defined by mathematical equation for minimal surface. Computational form-finding using nonlinear analysis method has been used in this study. The study proposes an alternative architectural surface for architect and structural engineer to consider Handkerchief surface, u=v=0.2 and u=v=1.2 applied in tensioned fabric structure. The results on factors affecting initial equilibrium shape can serve as a reference for proper selection of surface parameter for achieving a structurally viable surface. Such in-sight will lead the improvement of rural basic infrastructure, economic gains, sustainability of built environment and green technology initiative.
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Pons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran, and Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors." Superficies y Vacío 30, no. 3 (November 26, 2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.
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We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices with the thicker pentacene film. Top contact thin film transistors presented field-effect mobility values one order of magnitude higher (4.8 × 10-2 cm2/V·s) than bottom contact ones (1 × 10-3 cm2/V·s). Threshold voltage for top-contact thin film transistors was -3.1 V. After 2 months, performance in the devices degraded and presented an increase of one order of magnitude (105 - 106 ?) for BC-TFTs and two orders of magnitude (106 - 108 ?) for TC-TFTs in contact resistance.
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Yao, Jiangbo, Kai Zhou, Chuanbao Luo, Macai Lu, Junbiao Peng, and Xin Zhang. "32‐2: Mask Reducing Backplane Architecture for Advanced Micro‐LED Display." SID Symposium Digest of Technical Papers 54, no. 1 (June 2023): 457–60. http://dx.doi.org/10.1002/sdtp.16591.
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In this work, a novel thin film transistor (TFT) structure named ASD was prepared, which means active layer bottom‐contact with source/drain(SD) layer. ASD device use the first light shield metal layer served as SD electrode simultaneously, which can reduce 2‐count‐mask array process compared with traditional top gate (TG) device. The mobility and subthreshold swing of the ASD a‐IGZO TFT device can reach 14 cm2/Vs and 0.18 V/dec, respectively. The PBTS and NBTIS are within 0.5V through process optimization. In addition, a 7.1 inch Micro‐LED display used ASD TFT backplane has demonstrated, and Finally, the Micro‐LED panel shows +0.7V Vth shift after the high temperature and high humidity operation (HTHHO) 500h reliability test.
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Shih, Andy, and Akintunde Ibitayo Akinwande. "Solution-Processed and Self-Assembled Monolayer-Treated High-Voltage Organic Thin Film Transistors for Flexible MEMS Integration." MRS Advances 3, no. 33 (2018): 1877–82. http://dx.doi.org/10.1557/adv.2018.41.
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ABSTRACTWe report a 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) solution-processed high-voltage organic thin film transistor (HVOTFT) with a large breakdown voltage of |VDS| > 450 V, a three-fold increase from previous results. An offset channel architecture and an organosilane-based self-assembled monolayer (SAM) treatment were used to achieve large breakdown voltages. Solution-processed HVOTFTs will enable novel high-voltage and flexible applications. Reliability of the HVOTFT under high-field stress was studied in the context of threshold and onset to conduction voltages.
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Yoon, Jong-Gul. "A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films." Materials 13, no. 17 (August 20, 2020): 3680. http://dx.doi.org/10.3390/ma13173680.
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Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable information storage at nanoscale in an analogue way and in-memory computing. Memristive devices with long-/short-term synaptic plasticity are expected to provide a more capable neuromorphic system compared to traditional Si-based complementary metal-oxide-semiconductor circuits. Here, compositionally graded oxide films of Al-doped MgxZn1−xO (g-Al:MgZnO) are studied to fabricate a memristive device, in which the composition of the film changes continuously through the film thickness. Compositional grading in the films should give rise to asymmetry of Schottky barrier heights at the film-electrode interfaces. The g-Al:MgZnO films are grown by using aerosol-assisted chemical vapor deposition. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the films show self-rectifying memristive behaviors which are dependent on maximum applied voltage and repeated application of electrical pulses. Endurance and retention performance tests of the device show stable bipolar resistance switching (BRS) with a short-term memory effect. The short-term memory effects are ascribed to the thermally activated release of the trapped electrons near/at the g-Al:MgZnO film-electrode interface of the device. The volatile resistive switching can be used as a potential selector device in a crossbar memory array and a short-term synapse in neuromorphic computing.
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Illiberi, Andrea, Michael Givens, Alessandra Leonhardt, Matthew Surman, Ranjith Ramachandran, and Mihaela Popovici. "Atomic Layer Deposition for Memory Applications." ECS Meeting Abstracts MA2022-02, no. 31 (October 9, 2022): 1120. http://dx.doi.org/10.1149/ma2022-02311120mtgabs.
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The semiconductor industry has continuously adopted more complex architectures and 3D geometries, while simultaneously down scaling the critical dimensions of the devices. This presentation will briefly review the evolution of the memory device architectures, their impact on material/processing requirements, and outline how atomic scale processing has helped to overcome integration challenges. We will first present some key atomic scale processes which have enabled the fabrication of 3D memory devices, with particular focus on V-NAND and DRAM. Next, we will introduce new atomic scale processes, their implementation in emerging memory concepts and the related challenges on the path to productization. We will present the recent advances in ALD of ferroelectric materials, showing how a precise control of film composition, dopant incorporation and morphology are key to control ferroelectricity in doped HfZrO.
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Bagarinao, Katherine Develos, Toshiaki Yamaguchi, and Haruo Kishimoto. "Direct Deposition of Dense YSZ/Ni-YSZ Thin-Film Bilayers on Porous Anode-Supported Cells with High Performance and Stability." ECS Transactions 111, no. 6 (May 19, 2023): 1501–8. http://dx.doi.org/10.1149/11106.1501ecst.
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We present an approach for integrating a thin-film bilayer combination comprising a Ni(O)-YSZ nanocomposite layer and a YSZ thin-film electrolyte prepared using pulsed laser deposition into the architecture of porous Ni-YSZ-supported cells. Achieving a minimum bilayer thickness threshold of ~1.5 µm is found to be critical to achieve a high open circuit voltage value, as well as a significant decrease in the ohmic resistance to ~0.06 Ωcm2 at 750 °C and increase in maximum power density to 1.83 W/cm2. Short-term durability tests up to 45 h at a constant potential of 0.8 V showed stable operation with current densities reaching ~1.7 A/cm2. Cells utilizing thin-film bilayers can overcome issues associated degradation in conventionally sintered cells, in terms of maintaining excellent contact with the anode support and significantly suppressing Ni diffusion into the YSZ electrolyte.
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Lai, Ming-Hong, Auttasit Tubtimtae, Ming-Way Lee, and Gou-Jen Wang. "ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer." International Journal of Photoenergy 2010 (2010): 1–5. http://dx.doi.org/10.1155/2010/497095.
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Conventional nanorod-based dye-sensitized solar cells (DSSCs) are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO). The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1) one-step chemical vapor deposition (CVD) (2) two-step chemical bath deposition (CBD). The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/ and a power conversion efficiency of 0.73% under 85 mW/ of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.
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Zhao, Lili, Junwei Kuang, Weifeng Zhuang, Jie Chao, Wenbo Liao, Xiaobo Fu, Chao Li, Lingyun Ye, and Hailu Liu. "Studies on transmittance modulation and ions transfer kinetic based on capacitive-controlled 2D V2O5 inverse opal film for electrochromic energy storage application." Nanotechnology 33, no. 5 (November 12, 2021): 054001. http://dx.doi.org/10.1088/1361-6528/ac317b.
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Abstract Two-dimensional vanadium pentoxide inverse opal (2D V2O5 IO) architecture was fabricated by polystyrene (PS) sphere template assisted electrodeposition process. In comparison to the un-templated V2O5 film, the 2D V2O5 IO film exhibited a highly ordered hexagonal close-packed bowel-like array, as well as noticeable electrochromism, such as transmittance modulation up to 42.6% at 800 nm, high coloration efficiency (28.6 cm2 · C−1), fast ions transfer kinetic (t b = 7.2 s, t c = 2.5 s). These improvements of electrochromic performance were attributed to the ordered morphology with larger surface areas, which considerably shortened the ions diffusion paths and accelerated ions migration. An electrochromic energy storage device assembled from the 2D V2O5 IO film with simultaneous electrochromic and pseudocapacitive performance could not only show transmittance modulation accompanied by multicolor variations but also powered an LCD screen and an LED bulb, demonstrating a promising potential for practical applications.
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Baek, Dongki, Se-Hyeong Lee, So-Young Bak, Hyeongrok Jang, Jinwoo Lee, and Moonsuk Yi. "Control of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature." Electronics 13, no. 8 (April 18, 2024): 1544. http://dx.doi.org/10.3390/electronics13081544.
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Ultra-thin ZnO thin-film transistors with a channel thickness of <10 nm have disadvantages of a high threshold voltage and a low carrier mobility due to a low carrier concentration. Although these issues can be addressed by utilizing the strong reducing power of tri-methyl-aluminum, a method is required to control parameters such as the threshold voltage. Therefore, we fabricated a ZnO/Al2O3 thin-film transistor with a thickness of 6 nm and adjusted the threshold voltage and carrier mobility through the modulation of carrier generation by varying the growth temperature of Al2O3. As the growth temperature of Al2O3 increased, oxygen vacancies generated at the hetero–oxide interface increased, supplying a free carrier into the channel and causing the threshold voltage to shift in the negative direction. The optimized device, a ZnO/Al2O3 thin-film transistor with a growth temperature of 140 °C, exhibited a μsat of 12.26 cm2/V∙s, Vth of 8.16 V, SS of 0.65 V/decade, and ION/OFF of 3.98 × 106. X-ray photoelectron spectroscopy was performed to analyze the properties of ZnO/Al2O3 thin films.
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Cheremisin, A. B., S. A. Macegor, and D. M. Puzanov. "InZnON-based Thin Film Transistor for the Development of New Type Photo Detec-tors with a Colloidal Quantum Dots Sensitive Layer." Nano- i Mikrosistemnaya Tehnika 22, no. 8 (October 23, 2020): 452–60. http://dx.doi.org/10.17587/nmst.22.452-460.
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Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. In present work, we propose rather simple way to fabricate nitrogen doped InZnO-based TFT by DC reactive magnetron sputtering technique. The moderate nitrogen doping of the channel's semiconductor layer is studied in terms of the reproducibility and stability device's electrical characteristics. When nitrogen concentration in gas mix reaches the upper level of 71 % the best TFT parameters are achieved such as VON = -0.3 V, μ = 12 cm2/Vs, SS = 0.5 V/dec. The TFTs operate in depletion mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250 °C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. The prospects of using the thin-film transistor for the new type of photo detectors with a colloidal quantum dots (CQDs) sensitive layer are demonstrated. The solution-cast colloidal-quantum-dots were decorated on the nitrogen doped InZnO layer by spin-coating method. N-type CdSe/ZnS CQDs modified by the ligand (pyridine) are utilized as electron donor to inject electron to the channel layer. Higher photocurrent responsibility about 104 A/W at incident monochromatic light 405 nm is reached for hybrid phototransistor.
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Farooq, Waqas, Muhammad Ali Musarat, Javed Iqbal, Syed Asfandyar Ali Kazmi, Adnan Daud Khan, Wesam Salah Alaloul, Abdullah O. Baarimah, Ashraf Y. Elnaggar, Sherif S. M. Ghoneim, and Ramy N. R. Ghaly. "Optimized Thin-Film Organic Solar Cell with Enhanced Efficiency." Sustainability 13, no. 23 (November 26, 2021): 13087. http://dx.doi.org/10.3390/su132313087.
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Modification of a cell’s architecture can enhance the performance parameters. This paper reports on the numerical modeling of a thin-film organic solar cell (OSC) featuring distributed Bragg reflector (DBR) pairs. The utilization of DBR pairs via the proposed method was found to be beneficial in terms of increasing the performance parameters. The extracted results showed that using DBR pairs helps capture the reflected light back into the active region by improving the photovoltaic parameters as compared to the structure without DBR pairs. Moreover, implementing three DBR pairs resulted in the best enhancement gain of 1.076% in power conversion efficiency. The measured results under a global AM of 1.5G were as follows: open circuit voltage (Voc) = 0.839 V; short circuit current density (Jsc) = 10.98 mA/cm2; fill factor (FF) = 78.39%; efficiency (η) = 11.02%. In addition, a thermal stability analysis of the proposed design was performed and we observed that high temperature resulted in a decrease in η from 11.02 to 10.70%. Our demonstrated design may provide a pathway for the practical application of OSCs.
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Silva, Vinícius, Julio Martinez, Raphael Heideier, Jonathas Bernal, André Gimenes, Miguel Udaeta, and Marco Saidel. "A Long-Term Analysis of the Architecture and Operation of Water Film Cooling System for Commercial PV Modules." Energies 14, no. 6 (March 10, 2021): 1515. http://dx.doi.org/10.3390/en14061515.
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This work aims at analyzing and architecting natural and artificial parameters to model a water-film cooling system for photovoltaic modules for some months under warm conditions. Methodologically, the theoretical and technical aspects were structured to develop, implement, monitor, and assess the cooling system at an on-grid, outdoor testing unit, considering the following: (i) the criteria to select and to approve the implementation site (infrastructure and climatologic and solarimetric conditions); (ii) the types, frequency and qualities of the monitored data; (iii) the system measurement, monitoring and control equipment; (iv) the commissioning of the system as a whole; and (v) the tests and results empirically obtained. The water-film cooling system reduces the temperature by 15–19%, on average, and up to a maximum of 24–35%. In terms of electric power, there was an average gain of 5–9% at the time of day with the highest solar radiation, and maximum gains of 12% on days with solar radiation above average. Regarding gross energy, average gains of 2.3–6%, and maximum gains of 6.3–12%, were obtained. It was concluded that the test unit helps understand the natural phenomena and the development, operation, and maintenance of performance gain systems of on-grid PV modules for construction on a commercial scale.
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Siddiqui, Imran A., Russell C. Kirks, Eduardo L. Latouche, Matthew R. DeWitt, Jacob H. Swet, Erin H. Baker, Dionisios Vrochides, David A. Iannitti, Rafael V. Davalos, and Iain H. McKillop. "High-Frequency Irreversible Electroporation: Safety and Efficacy of Next-Generation Irreversible Electroporation Adjacent to Critical Hepatic Structures." Surgical Innovation 24, no. 3 (February 1, 2017): 276–83. http://dx.doi.org/10.1177/1553350617692202.
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Irreversible electroporation (IRE) is a nonthermal ablation modality employed to induce in situ tissue-cell death. This study sought to evaluate the efficacy of a novel high-frequency IRE (H-FIRE) system to perform hepatic ablations across, or adjacent to, critical vascular and biliary structures. Using ultrasound guidance H-FIRE electrodes were placed across, or adjacent to, portal pedicels, hepatic veins, or the gall bladder in a porcine model. H-FIRE pulses were delivered (2250 V, 2-5-2 pulse configuration) in the absence of cardiac synchronization or intraoperative paralytics. Six hours after H-FIRE the liver was resected and analyzed. Nine ablations were performed in 3 separate experimental groups (major vessels straddled by electrodes, electrodes placed adjacent to major vessels, electrodes placed adjacent to gall bladder). Average ablation time was 290 ± 63 seconds. No electrocardiogram abnormalities or changes in vital signs were observed during H-FIRE. At necropsy, no vascular damage, coagulated-thermally desiccated blood vessels, or perforated biliary structures were noted. Histologically, H-FIRE demonstrated effective tissue ablation and uniform induction of apoptotic cell death in the parenchyma independent of vascular or biliary structure location. Detailed microscopic analysis revealed minor endothelial damage within areas subjected to H-FIRE, particularly in regions proximal to electrode insertion. These data indicate H-FIRE is a novel means to perform rapid, reproducible IRE in liver tissue while preserving gross vascular/biliary architecture. These characteristics raise the potential for long-term survival studies to test the viability of this technology toward clinical use to target tumors not amenable to thermal ablation or resection.
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Jang, Won-Ho, Jun-Hyeok Yim, Hyungtak Kim, and Ho-Young Cha. "Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process." Electronics 12, no. 7 (March 31, 2023): 1667. http://dx.doi.org/10.3390/electronics12071667.
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We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. The AlN film deposited by PEALD exhibited a crystalline structure, not an amorphous one. The enhanced polarization effect of introducing the PEALD AlN film on a thin AlGaN barrier was confirmed through electrical analysis. To fabricate the E-mode AlGaN/GaN MIS-HFET, the PEALD AlN film was deposited on a 4.5 nm AlGaN barrier layer and then a damage-free wet etching process was used to open the gate region. The MIS-gate structure was formed by depositing a 15 nm plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide (SiO2) film. The fabricated thin-AlGaN/GaN MIS-HFET demonstrated successful E-mode operation, with a threshold voltage of 0.45 V, an on/off ratio of approximately 109, a specific on-resistance of 7.1 mΩ·cm2, and an off-state breakdown voltage exceeding 1100 V.
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Kim, Yeongkwon, Seung-Bae Jeon, and Byung Chul Jang. "Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing." Nanomaterials 13, no. 4 (February 13, 2023): 710. http://dx.doi.org/10.3390/nano13040710.
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Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.
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BINDL, DOMINICK J., and MICHAEL S. ARNOLD. "SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 687–95. http://dx.doi.org/10.1142/s0129156411006970.
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A photovoltaic photodetector harnessing near infrared band gap absorption by thin films of post-synthetically sorted semiconducting single walled carbon nanotubes ( s -SWCNTs) is described. Peak specific detectivity of 6×1011 Jones at -0.1 V bias at 1210 nm is achieved using a heterojunction device architecture: indium tin oxide/ ca. 5 nm s -SWCNT / 120 nm C60 / 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / Ag. The photodiodes are characterized by a series resistance of 2.9 Ω cm2 and a rectification ratio of 104 at ±1V. These results are expected to guide the exploration of new classes of solution-processable, mechanically flexible, integrable, thin film photovoltaic photodetectors with tunable sensitivity in the visible and infrared spectra based on semiconducting carbon nanotubes.
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Pal, Debashish, and Soumee Das. "C-V and I-V characterisation of CdS/CdTe thin film solar cell using defect density model." Serbian Journal of Electrical Engineering 18, no. 2 (2021): 255–70. http://dx.doi.org/10.2298/sjee2102255p.
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This paper presents a detailed study of the current-voltage (I-V) and capacitance-voltage (C-V) measurements made on a CdS/CdTe based solar cell by numerical modeling. Implementation of the simulated cell having a superstrate configuration was done with the help of SCAPS program using defect density model. The I-V characterisation includes window and absorber layer optimisation based on various factors including the impurity doping concentration, thickness and defect density. The energy band diagram, spectral response and currentvoltage plot of the optimised cell configuration are shown. C-V characterisation (Mott-Schottky analysis) of the solar cell is conducted at different low frequencies to determine the flatband potential, carrier concentration and to validate the reliability of the results. The optimum device performance was obtained when the active layer was 2 ?m thick with a doping level of 1?1015/cm3.
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Lee, Se-Hyeong, So-Young Bak, and Moonsuk Yi. "Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion." Electronics 11, no. 14 (July 20, 2022): 2263. http://dx.doi.org/10.3390/electronics11142263.
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Several studies on amorphous oxide semiconductor thin-film transistors (TFTs) applicable to next-generation display devices have been conducted. To improve the poor switching characteristics and gate bias stability of co-sputtered aluminum–indium–zinc oxide (AIZO) TFTs, we fabricate Al2O3/indium–zinc oxide (IZO) dual-active-layer TFTs. By varying the Al2O3 target power and oxygen partial pressure in the chamber during Al2O3 back-channel deposition, we optimize the electrical characteristics and gate bias stability of the Al2O3/IZO TFTs. The Al2O3/IZO TFTs, which are fabricated under 50 W Al2O3 target power and 13% oxygen partial pressure conditions, exhibit a high electron mobility of 23.34 cm2/V·s, a low threshold voltage of 0.96 V, an improved on–off current ratio of 6.8 × 107, and a subthreshold swing of 0.61 V/dec. Moreover, by increasing the oxygen partial pressure in the chamber, the positive and negative bias stress values improve to +0.32 V and −2.08 V, respectively. X-ray photoelectron spectroscopy is performed to reveal the cause of these improvements.
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Liu, Han Wu, Wen Jing Sun, and Shuai Gao. "Study on the Experimental Preparation of the SiO2 Minus Reflection Film of the Solar Spectrum Selective Absorption Coating." Advanced Materials Research 512-515 (May 2012): 182–85. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.182.
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In order to meet the applications of the solar power air-conditioning, solar power generation and in the high-end flat plate collector domestic market and architecture, the study on the middle-high temperature solar selective absorption coating has attracted people's attention. In this paper, SS-N-O and SiO2 were used as the absorption and the minus reflection film. The high-performance middle-high temperature flat solar selective absorption coating with excellent optical properties (absorption ratio was greater than 0.92 and the launch ratio was less than 0.09), strong oxidation resistance and weather resistance was prepared by the use of magnetron sputtering technique. By controlling the process parameters and the experimental tests of the optical properties, a good performance SiO2 minus reflection film was obtained, and then combined it with SS-N-O to form a relatively inexpensive gradient coating which could meet the relevant performance requirements. The experimental results show that: in the conditions of that the vacuum degree was 2.8 × 10-3 Pa, sputtering voltage was 268 V, argon gas flow was 4.0 sccm, oxygen flow rate was 0.7 sccm and the sputtering current was 1.3 A, borosilicate glass 3.3 was used as a carrier, the SiO2 minus reflection film which reflectance and transmittance were respectively 0.121 and 0.740 was obtained by 30 minutes of stable magnetron sputtering. This minus reflection film was combined well with the gradual double-layer absorption film SS-N-O, and the absorption rate was increased by 0.049.
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Chen, Guangyuan, Ning Xue, Zhimei Qi, Weichao Ma, Wangzhe Li, Zhenhu Jin, and Jiamin Chen. "Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum." Micromachines 15, no. 4 (April 12, 2024): 516. http://dx.doi.org/10.3390/mi15040516.
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Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.
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Chang, Changyuan, Xiong Han, Menglin Wu, Dadi Zhao, and Hongliang Xu. "Electrolytic Capacitorless AC/DC LED Driver." Journal of Circuits, Systems and Computers 28, no. 12 (November 2019): 1950200. http://dx.doi.org/10.1142/s0218126619502001.
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This paper presents electrolytic capacitorless AC/DC LED driver. It adopts Boost–Buck topology, through modulation of the conduction time [Formula: see text] and the change of input current reference, to reduce the instantaneous input and output power difference, so a smaller film capacitor can be used instead of the electrolytic capacitor. Therefore, LED driver power life has been effectively improved. The Buck converter operates in the inductor current discontinuous conduction mode to achieve constant output current by controlling the peak current. The control IC is fabricated in TSMC 0.35-[Formula: see text]m 5-V/650-V CMOS/LDMOS process, and verified in a 72-V/150-mA circuit prototype. The test results show that when the range of input voltage is 175–264 Vac, the efficiency of the system is 83%, the voltage linear regulation is [Formula: see text]%, the load regulation is [Formula: see text]%, and the electrolytic capacitor is replaced by 470-nF CBB capacitor under the condition that the power factor is above 0.7. Therefore, the design of the control chip in the LED driver has a very good application prospect.
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KIM, HONG KOO, and NASIR ABDUL BASIT. "FERROELECTRIC NONVOLATILE MEMORY FIELD-EFFECT TRANSISTORS BASED ON A NOVEL BUFFER LAYER STRUCTURE." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 39–46. http://dx.doi.org/10.1142/s0129156400000076.
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We have proposed and developed a ferroelectric nonvolatile field-effect transistor that incorporates a thin MgO buffer layer between a ferroelectric film and an oxidized Si substrate. The use of an MgO/SiO2 buffer for a ferroelectric gate is based on the following findings. First, a thin MgO buffer serves well as a template layer allowing the growth of highly oriented ferroelectric films on amorphous substrates. Second, MgO works well as a diffusion barrier between a ferroelectric film and a substrate, protecting the silicon FET channel region from interdiffusion or reaction that may occur during device processing. Third, thermal oxidation of Si is known to be one of the best ways of passivating silicon surfaces, thus to reduce high quality FET channels. The fabricated devices show excellent performance in ferroelectric polarization switching, memory retention, and fatigue resistance. The devices also demonstrate scalability in device dimension and operating voltage, i.e., they are suitable for low voltage operation (3-5 V or below) showing a sufficient memory window (1-2 V).
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Han, Ye-Ji, Se Hyeong Lee, So-Young Bak, Tae-Hee Han, Sangwoo Kim, and Moonsuk Yi. "Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction." Electronics 10, no. 9 (May 7, 2021): 1099. http://dx.doi.org/10.3390/electronics10091099.
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Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.
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Chang, Yeoungjin, Ravindra Naik Bukke, Youngoo Kim, Kiwan Ahn, Jinbaek Bae, and Jin Jang. "High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis." Electronics 12, no. 3 (January 30, 2023): 688. http://dx.doi.org/10.3390/electronics12030688.
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Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator (GI) exhibits the field-effect mobility (μFE) of 16 cm2V−1s−1, threshold voltage (VTH) of −0.45 V subthreshold swing (SS) of 133 mV/dec., and ON/OFF current ratio of ~108. The optimal a-IGTO TFT shows excellent stability under positive-bias-temperature stress (PBTS) with a small ΔVTH shift of 0.35 V. The enhancements are due to the high film quality and fewer interfacial traps at the a-IGTO/ZAO interface. Therefore, the spray pyrolyzed a-IGTO TFT can be a promising candidate for flexible TFT in the next-generation display.
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Anandan, M., D. C. Ketchum, and W. N. Carr. "Behaviour of internal positive column of HgAr discharge between thick-film integrated multi-channel hollow electrodes." Displays 13, no. 2 (January 1992): 75–80. http://dx.doi.org/10.1016/0141-9382(92)90101-v.
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Neumann, Bernhard, Thorsten Brezesinsky, Bernd Smarsly, and Helmut Tributsch. "Tayloring the Photocatalytical Activity of Anatase TiO2 Thin Film Electrodes by Three-Dimensional Mesoporosity." Solid State Phenomena 162 (June 2010): 91–113. http://dx.doi.org/10.4028/www.scientific.net/ssp.162.91.
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Mesoporous titanium dioxide (m-TiO2) thin film electrodes were synthesized by evaporation-induced self-assembly (EISA), utilizing a novel type of amphiphilic block copolymer as template. The ordered network of pores shows an accessible inner volume that results in a huge BET-surface and a distinct transparency. According to X-ray diffraction analyses the mesoporous films are highly crystalline after calcination at 550°C. 1D and 2D small-angle X-ray scattering and transmission electron microscopy investigations prove the high quality of the mesopore texture over micrometer-sized areas. These well-defined, crystalline m-TiO2 films show an increased photoactivity for overall water splitting and oxidation of formic acid as compared to porous films prepared in the same manner without a template. The performance of the electrodes was analyzed by measuring the photocurrent and the mass signal of liberated gas by electrochemical mass spectroscopy (EMS). These experiments reveal that film morphology have a great influence to the I-V characteristic of photoelectrodes. An appropriate crystallization temperature is indispensable to obtain an optimum between crystallinity, morphology and photoactivity and to prevent collapse of the mesopore architecture.
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Wang, Xinhai, Liqiong Wu, Hua Chen, Wei Wang, and Zhaoping Liu. "Frequency-Reconfigurable Microstrip Patch Antenna Based on Graphene Film." Electronics 12, no. 10 (May 19, 2023): 2307. http://dx.doi.org/10.3390/electronics12102307.
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Fifth-generation mobile communication systems must connect to multiple wireless networks. In order to enable a single device to match the frequency bands of multiple wireless networks, it is usually necessary to use multiple single-band or multi-band antennas, which occupy a large amount of space inside a given device. Using frequency-reconfigurable antennas to replace multiple single-function antennas is an effective way to solve this problem. In this paper, we propose a frequency-reconfigurable microstrip patch antenna based on graphene film, which fills the slot of the radiating patch with graphene film. It was found that the surface current of the antenna can be changed by changing the conductivity of graphene through bias voltage, which allows the operating mode of the antenna to switch between a nearly slotted antenna and a nearly unslotted antenna to achieve frequency reconfigurability. By changing the bias voltage from 0 V to 9 V, the resonant frequency of the antenna can be switched from 29.6 GHz to 40 GHz, and the center frequency can by altered by 10.4 GHz, corresponding to the reflection coefficients of −26 dB and −20.8 dB, respectively. The antenna achieves good matching in both operating modes.
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Baharom, Mohamad Faizal, Mohd Fauzi Ab Rahman, Anas Abdul Latiff, Aminah Ahmad, Mohd Hafiz Jali, and Sulaiman Wadi Harun. "Passive mode locking erbium-doped fiber laser using V2O5 polyethylene glycol saturable absorber." Indonesian Journal of Electrical Engineering and Computer Science 32, no. 1 (October 1, 2023): 269. http://dx.doi.org/10.11591/ijeecs.v32.i1.pp269-275.
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An ultrashort pulse erbium-doped fiber laser (EDFL) in anomalous group delay dispersion (GDD) has been proven to produce a soliton wave production at 1596 nm. The mode-locking operation was generated by employing a vanadium pentoxide-polyethylene glycol (V<sub>2</sub>O<sub>5</sub>)-(PEG) film as absorber for all-fiber ring setup. Under anomalous dispersion, the soliton mode-locked laser produced a peak wavelength with 2.7 nm spectral bandwidth and Kelly sidebands. Under this condition, we obtained pulse energy of 210 nJ and pulse width of 1.40 ps. The maximum peak electrical power of 150 kW was calculated at the maximum pump power. These findings shows that the V<sub>2</sub>O<sub>5</sub>-PEG film can be a good saturable absorber (SA) device in generating stable mode-locking fiber laser at the 1.55- area.
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Gordin, Alexey A., and Elena D. Gordina. "The River Terminal in the Historic Architectural Complex of Nizhny Novgorod." Herald of an archivist, no. 4 (2022): 1248–61. http://dx.doi.org/10.28995/2073-0101-2022-4-1248-1261.
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The authors focus on the evolution of architectural appearance of the Nizhny Novgorod River Terminal. The building on the spit of the Volga and Oka rivers attracts the attention of guests of the Volga region capital. The River Terminal is an adornment of the Nizhne-Volzhskaya embankment and one of the symbols of Nizhny Novgorod. The topic of the presented article is most relevant in connection with the recent 800th anniversary of Nizhny Novgorod. Our goal is to consider the evolution of architectural appearance of the Nizhny Novgorod River Terminal and also the transformations of its composition in the context of historical development. The main source base of the article is technical documentation, which is stored in the State Archive of Special Documentation of the Nizhny Novgorod Region (GASDNO) and is being introduced into scientific use for the first time. The authors express their gratitude to O. A. Ukhlina, the chief methodologist of the department for the use of documents and information work of the GASDNO. Another valuable source is materials of the periodical press. Undoubtedly, the topic is interdisciplinary. Presently, scientific works consider the Nizhny Novgorod (Gorky) River Terminal mainly from a technical and architectural position. This circumstance determines the scientific novelty of the article. The chronological framework covers the 1930s-2000s. In the years of the first five-year plans, when the city of Gorky became a major industrial center of the country, its need for development of water transport and river infrastructure increased significantly. In the 1930s architect P. Saburov developed the first draft of the River Terminal building, which remained unrealized. During the Great Patriotic War and in the post-war period, there was no terminal in Gorky, and only after the end of the restoration period, in the 1950s, the task to carry out the design of the terminal was set anew. The team of the Leningrad Design Institute for River Transport headed by M.I. Churilin and L.S. Smirnova developed the new project, permitting the construction to begin in 1959. Externally, the station reminds a ship, as its main facades are elongated along the river and the street, and it rises along its central axis in stepped volumes. Since its opening in 1964, the River Terminal has received thousands of passengers per year and Gorky has become a major tourist center. In 1987, the River Terminal was seriously damaged by fire; in 2003 it was restored upon the project of V. Romanova.
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Hu, Peixuan, Zhixiang Gao, Lu Yang, Wanfa Li, Xiaohan Liu, Ting Li, Yujia Qian, Lingyan Liang, Yufang Hu, and Hongtao Cao. "Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors." Electronics 13, no. 8 (April 13, 2024): 1478. http://dx.doi.org/10.3390/electronics13081478.
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In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device’s threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs.
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Jang, Nam-Su, Kang-Hyun Kim, and Jong-Man Kim. "Fabrication of Metal Nanowire Based Stretchable Mesh Electrode for Wearable Heater Application." Korean Journal of Metals and Materials 59, no. 8 (August 5, 2021): 575–81. http://dx.doi.org/10.3365/kjmm.2021.59.8.575.
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In recent years, human-convenient smart wearable devices have attracted considerable attention as emerging applications in smart healthcare systems, soft robotics, and human-machine interfaces. In particular, resistive film heaters with mechanical flexibility and excellent mechanical and electrothermal performance have recently been widely explored for wearable thermotherapy applications. Here, we present a simple and efficient way of fabricating highly flexible and stretchable resistive film heaters based on a patterned silver nanowire (AgNW)/polymer composite structure. The AgNW/polymer composite electrodes were successfully prepared using a photolithographically patterned polymer mold based selective transfer of a AgNW percolation network. The photolithographic mold patterning process allows the heater fabrication to be precise and reproducible. The mesh-patterned AgNW/polymer composite heater exhibited the excellent electrothermal performance of ~46.7 oC at 3 V. This low-voltage operation is highly desirable in practical wearable device applications. Moreover, the AgNW/polymer heater can be stretched up to 20% without significant degradation in electrothermal performance thanks to its open-cell architecture, suggesting that the device can stably transfer heat to the skin after being attached to various body parts with curvilinear surfaces. The experimental results suggest that the mesh-structured AgNW/polymer composite heaters are highly feasible for use as a wearable thermotherapy tool in many emerging applications.
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De Lima, Jader A., Sidnei F. Silva, Adriano S. Cordeiro, and Michel Verleysen. "A CMOS/SOI Single-input PWM Discriminator for Low-voltage Body-implanted Applications." VLSI Design 15, no. 1 (January 1, 2002): 469–76. http://dx.doi.org/10.1080/1065514021000012075.
Full textAbstract:
A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 μm single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm2. Measured resolution of encoding parameter α is better than 10% at 6 MHz and VDD = 3.3 V. Idle-mode consumption is 340 μW. Pulses of frequencies up to15 MHz and α =10% can be discriminated for 2.3 V ≤ VDD ≤ 3.3 V. Such an excellent immunity to VDD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.
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Ahmad, Fatin Nor, Yusmar Palapa Wijaya, Khairul Anuar Mohamad, Nafarizal Nayan, Megat Muhammad Ikhsan Megat Hasnan, Afishah Alias, and Bablu Kumar Ghosh. "Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique." Bulletin of Electrical Engineering and Informatics 10, no. 3 (June 1, 2021): 1291–99. http://dx.doi.org/10.11591/eei.v10i3.3029.
Full textAbstract:
The physical and structural characteristics of pentacene thin films on indium tin oxide (ITO)-coated glass were studied. The pentacene films were deposited using the thermal evaporation method with deposition times of 20, 30, and 60 minutes. Field-emission scanning electron microscopy (FESEM) images revealed that film thickness increased with deposition time, with a bulk phase layer appearing at 60 minutes. The presence of the thin-film phase corresponding to 15.5 Å lattice spacing was demonstrated by X-ray diffraction (XRD) patterns in pentacene films with deposition times of 20 and 30 minutes. Meanwhile, with a deposition time of 60 minutes and a lattice spacing of 14.5 Å, the existence of the bulk phase was verified in the pentacene film. Atomic force microscopy (AFM) images of the crystallinity of the pentacene films revealed that the pentacene films deposited on ITO-coated glass exhibited the formation of similar islands with modular grains, results in a fine crystalline structure. From the current-voltage (I-V) and current density-voltage (J-V) characteristics, the pentacene films were ohmic and that current increased as the pentacene’s thickness decreased. Pentacene films deposited on an ITO-coated glass substrate showed potential in the development of broadband and narrowband optoelectronic devices on a transparent substrate.
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Jeon, Young Pyo, Dongpyo Hong, Sang-hwa Lee, Eun Jung Lee, Tae Woong Cho, Do Yeon Kim, Chae Yeon Kim, et al. "Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis." Electronics 12, no. 1 (December 23, 2022): 47. http://dx.doi.org/10.3390/electronics12010047.
Full textAbstract:
Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries in areas such as semiconductors, spacecraft, aircraft, and rocket technologies due to its high bandgap energy, useful melting point, good thermal conductivity, and dielectric constants. In this context, our approach is a novel method to produce BeO thin films based on a two-step spin-coating innovation of the conventional powder synthesis method. The surface morphology and the crystal structure of BeO thin films were observed to be dependent on the citric acid/beryllium sulfate ratio and the sintering temperature, respectively. To characterize the BeO films, X-ray photoelectron spectroscopy was conducted for an elemental analysis. Furthermore, the bandgap of the BeO thin films was determined by reflection electron energy loss spectroscopy. Finally, the leakage current of a planar metal–insulator–metal device consisting of Au/Ti/BeO thin film/Ti/Au electrodes was determined to be below the nA range over the linear voltage sweeping range of −20 V to +20 V. These results can assist researchers in the areas of morphology control strategies, phase transfer theories, and applications that utilize BeO thin film manufactured by a solution process.
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Kim, Kyung-Tae, Keon Woo Lee, Sanghee Moon, Joon Bee Park, Chan-Yong Park, Seung-Ji Nam, Jaehyun Kim, Myoung-Jae Lee, Jae Sang Heo, and Sung Kyu Park. "Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistors." Materials 14, no. 12 (June 17, 2021): 3361. http://dx.doi.org/10.3390/ma14123361.
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Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a cost-effective and straightforward process capable of minimizing polymers bound to s-SWCNT surfaces acting as an interfering element for the charge carrier transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, we introduced conformal dielectric configuration for s-SWCNT FETs, which are explored by a carefully designed wide array of electrical and chemical characterizations with finite-element analysis (FEA) computer simulation. For more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel dielectrics, demonstrating field-effect mobility of ~8.19 cm2/V⋅s and on/off current ratio of ~105 along with negligible hysteresis.
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Huang, Wei-Lun, Sheng-Po Chang, Cheng-Hao Li, and Shoou-Jinn Chang. "The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method." Electronics 10, no. 5 (March 9, 2021): 631. http://dx.doi.org/10.3390/electronics10050631.
Full textAbstract:
In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.
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Chen, Kai, Yanling Wu, Xia Kong, Pingshun Zhang, Feifei Sun, Yanli Chen, and Jianzhuang Jiang. "Controlled preparation of ZnS nanoparticle arrays in Langmiur monolayer of an unsymmetrical phthalocyaninato zinc complex: Synthesis, organization and semiconducting properties." Journal of Porphyrins and Phthalocyanines 20, no. 08n11 (August 2016): 1334–41. http://dx.doi.org/10.1142/s1088424616500917.
Full textAbstract:
A new unsymmetrical phthalocyaninato zinc complex with typical amphiphilic nature, namely 2,3-di(4-hydroxyphenoxy)-9,10,16,17,24,25-hexakis([Formula: see text]-octyloxy)phthalocyaninato zinc, Zn[Pc(OC8H[Formula: see text](OPhOH)2], has been designed, synthesized, and characterized by a range of spectroscopic methods. The Langmuir monolayer of this amphiphilic complex has been used as not only an organic template but also as a good functional organic material to produce the monodispersed nanoparticles of Zn[Pc(OC8H[Formula: see text](OPhOH)2]/ZnS nanocomposite. In addition, multilayer pure and hybrid films have also been obtained by depositing monolayers of the amphiphilic complex and Zn[Pc(OC8H[Formula: see text](OPhOH)2]/ZnS nanocomposite, respectively, using the Langmuir–Shäfer (LS) method. Surface pressure-area isotherms, UV-vis spectroscopic, and XRD studies indicate that the molecules adopted a face-to-face configuration and edge-on orientation in both the multilayer pure LS and Zn[Pc(OC8H[Formula: see text](OPhOH)2]/ZnS hybrid films. In particular, current–voltage (I–V) measurements reveal the superior conductivity of the Zn[Pc(OC8H[Formula: see text](OPhOH)2]/ZnS hybrid film nanocomposites to that of the stand-alone films, and this is due to the existence of the densely packed molecular architecture in the film matrix and the large interfacial area between the two components. These characteristics remove the charge transporting bottleneck by creating an interpenetrating consistent thin film of hybrid materials. The result sheds lights on new ways for developing organic-inorganic hybrid nanostructures with good semiconducting properties.
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Alemanno, Alessio, Riccardo Morici, Miguel Pretelli, and Corrado Florian. "Design of a 7.5 kW Dual Active Bridge Converter in 650 V GaN Technology for Charging Applications." Electronics 12, no. 6 (March 7, 2023): 1280. http://dx.doi.org/10.3390/electronics12061280.
Full textAbstract:
High-voltage GaN switches offer low conduction and commutation losses compared with their Si counterparts, enabling the development of high-efficiency switching-mode DC–DC converters with increased switching frequency, faster dynamics, and more compact dimensions. Nonetheless, the potential of GaN switches can be fully exploited only by means of accurate simulations, optimal switch driving, suitable converter topology, accurate component selection, PCB layout optimization, and fast digital converter control. This paper describes the detailed design, simulation, and implementation of an air-cooled, 7.5 kW, dual active bridge converter exploiting commercial 650 V GaN switches, a compact planar transformer, and low ESL/ESR metal film capacitors. The isolated bidirectional converter operates at a 200 kHz switching frequency, with an output voltage range of 200–500 V at nominal 400 V input voltage, and a maximum output current of 28 A, with a wide full-power ZVS region. The overall efficiency at full power is 98.2%. This converter was developed in particular for battery charging applications, when bidirectional power flow is required.
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Li, Lei. "Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices." Nanomaterials 9, no. 4 (April 2, 2019): 518. http://dx.doi.org/10.3390/nano9040518.
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A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.
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Labrador, Natalie Yumiko, and Daniel V. Esposito. "(Invited) Multifunctional Membrane Coated Electrocatalysts." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1875. http://dx.doi.org/10.1149/ma2018-01/31/1875.
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Electrocatalysts are essential components in many emerging electrochemical technologies due to their ability to efficiently facilitate the interconversion between electrical and chemical energy. However, significant improvements in the stability, activity, and selectivity of state-of-the-art electrocatalysts must be made if these technologies are going to play a major role in a sustainable energy future. The vast majority of electrocatalysts used in today’s commercial devices are comprised of metallic nanoparticles or thin films that are deposited onto a conductive support and partially exposed to the bulk electrolyte. By contrast, this work has explored an alternate electrocatalyst architecture in which the active electrocatalyst has been encapsulated by an ultrathin permeable overlayer. Specifically, we encapsulate Pt nanoparticle and thin film electrocatalysts with 2-20 nm thick layers of silicon oxide (SiOx) fabricated using a room temperature deposition process.[1] Through a combination of physical characterization and electroanalytical measurements, we show that these permeable overlayers can serve as nano-scale membranes that provide significant benefits for stabilizing Pt nanoparticles and imparting advanced catalytic functionalities such as poison-resistance. This work has focused on SiOx-encapsulated Pt thin films electrocatalysts for the hydrogen evolution reaction, but the membrane coated electrocatalyst architecture also has great potential as a tunable platform that can be extended to many other materials and chemistries. [1] N. Y. Labrador, X. Li, Y. Liu, J. T. Koberstein, R. Wang, H. Tan, T. P. Moffat, and D. V. Esposito, Nano Letters, 16, 6452-6459, 2016.