Journal articles on the topic 'Ultrathin oxides'
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Bec, Romulad B., Andrzej Jakubowsk, Lidia Łukasiak, and Michał Korwin-Pawłowski. "Challenges in ultrathin oxide layers formation." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 27–34. http://dx.doi.org/10.26636/jtit.2001.1.46.
Taylor, Seth T., John Mardinly, and Michael A. O'Keefe. "HRTEM Image Simulations for the Study of Ultrathin Gate Oxides." Microscopy and Microanalysis 8, no. 5 (October 2002): 412–21. http://dx.doi.org/10.1017/s1431927602020123.
Morgen, P., A. Bahari, U. Robenhagen, J. F. Andersen, J. K. Hansen, K. Pedersen, M. G. Rao, and Z. S. Li. "Roads to ultrathin silicon oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 1 (January 2005): 201–7. http://dx.doi.org/10.1116/1.1842113.
Huang, Feng, W. J. Liu, J. F. Sullivan, J. A. Barnard, and M. L. Weaver. "Room-temperature oxidation of ultrathin TiB2 films." Journal of Materials Research 17, no. 4 (April 2002): 805–13. http://dx.doi.org/10.1557/jmr.2002.0118.
Zhu, Jianhui, Jian Jiang, Wei Ai, Zhanxi Fan, Xintang Huang, Hua Zhang, and Ting Yu. "Encapsulation of nanoscale metal oxides into an ultra-thin Ni matrix for superior Li-ion batteries: a versatile strategy." Nanoscale 6, no. 21 (2014): 12990–3000. http://dx.doi.org/10.1039/c4nr03661a.
Wang, Kai, Bolong Huang, Weiyu Zhang, Fan Lv, Yi Xing, Wenshu Zhang, Jinhui Zhou, et al. "Ultrathin RuRh@(RuRh)O2 core@shell nanosheets as stable oxygen evolution electrocatalysts." Journal of Materials Chemistry A 8, no. 31 (2020): 15746–51. http://dx.doi.org/10.1039/d0ta03213a.
Ting, D. Z. Y. "Tunneling characteristics of nonuniform ultrathin oxides." Applied Physics Letters 73, no. 19 (November 9, 1998): 2769–71. http://dx.doi.org/10.1063/1.122585.
Lobinsky, A. A., and V. I. Popkov. "Ultrathin 2D nanosheets of transition metal (hydro)oxides as prospective materials for energy storage devices: A short review." Electrochemical Materials and Technologies 1, no. 1 (2022): 20221008. http://dx.doi.org/10.15826/elmattech.2022.1.008.
Rotondaro, A. L. Pacheco, R. T. Laaksonen, and S. P. Singh. "Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters." Journal of Integrated Circuits and Systems 2, no. 2 (November 17, 2007): 63–66. http://dx.doi.org/10.29292/jics.v2i2.265.
Chari, K. S., and S. Kar. "Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides." Journal of The Electrochemical Society 138, no. 7 (July 1, 1991): 2046–49. http://dx.doi.org/10.1149/1.2085921.
Ting, D. Z. Y., Erik S. Daniel, and T. C. Mcgill. "Interface Roughness Effects in Ultra-Thin Tunneling Oxides." VLSI Design 8, no. 1-4 (January 1, 1998): 47–51. http://dx.doi.org/10.1155/1998/23567.
Choi, B. D., and D. K. Schroder. "Degradation of ultrathin oxides by iron contamination." Applied Physics Letters 79, no. 16 (October 15, 2001): 2645–47. http://dx.doi.org/10.1063/1.1410363.
Donggun Park and Chenming Hu. "Plasma charging damage on ultrathin gate oxides." IEEE Electron Device Letters 19, no. 1 (January 1998): 1–3. http://dx.doi.org/10.1109/55.650333.
Wen, H. J., and R. Ludeke. "Localized degradation studies of ultrathin gate oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (May 1998): 1735–40. http://dx.doi.org/10.1116/1.581293.
Eng, J., R. L. Opila, J. M. Rosamilia, B. J. Sapjeta, Y. J. Chabal, T. Boone, R. Masaitis, Thomas Sorsch, and Martin L. Green. "The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization." Solid State Phenomena 76-77 (January 2001): 145–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.145.
Takeda, Mikako, Takeshi Ohwaki, Hideo Fujii, Eisuke Kusumoto, Yoshiyuki Kaihara, Yoshizo Takai, and Ryuichi Shimizu. "Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide." Japanese Journal of Applied Physics 37, Part 1, No. 2 (February 15, 1998): 397–401. http://dx.doi.org/10.1143/jjap.37.397.
Hamed, Mai Hussein, David N. Mueller, and Martina Müller. "Thermal phase design of ultrathin magnetic iron oxide films: from Fe3O4 to γ-Fe2O3 and FeO." Journal of Materials Chemistry C 8, no. 4 (2020): 1335–43. http://dx.doi.org/10.1039/c9tc05921k.
Hardy, An, Sven Van Elshocht, Jan D’Haen, Olivier Douhéret, Stefan De Gendt, Christoph Adelmann, Matty Caymax, et al. "Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films." Journal of Materials Research 22, no. 12 (December 2007): 3484–93. http://dx.doi.org/10.1557/jmr.2007.0433.
Liao, Zhaoliang, and Jiandi Zhang. "Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures." Applied Sciences 9, no. 1 (January 3, 2019): 144. http://dx.doi.org/10.3390/app9010144.
Chen, Zongkun, Minghua Huang, and Helmut Cölfen. "Synthesis of ultrathin metal oxide and hydroxide nanosheets using formamide in water at room temperature." CrystEngComm 23, no. 21 (2021): 3794–801. http://dx.doi.org/10.1039/d1ce00277e.
Fukuda, Masatoshi, Wataru Mizubayashi, Atsushi Kohno, Seiichi Miyazaki, and Masataka Hirose. "Analysis of Tunnel Current through Ultrathin Gate Oxides." Japanese Journal of Applied Physics 37, Part 2, No. 12B (December 15, 1998): L1534—L1536. http://dx.doi.org/10.1143/jjap.37.l1534.
Chen, C. C., C. Y. Chang, C. H. Chien, T. Y. Huang, H. C. Lin, and M. S. Liang. "Temperature-accelerated dielectric breakdown in ultrathin gate oxides." Applied Physics Letters 74, no. 24 (June 14, 1999): 3708–10. http://dx.doi.org/10.1063/1.123228.
Hori, Takashi, Hiroshi Iwasaki, Takuichi Ohmura, Atsuko Samizo, Minoru Sato, and Yoshiaki Yoshioka. "Compositional study of ultrathin rapidly reoxidized nitrided oxides." Journal of Applied Physics 65, no. 2 (January 15, 1989): 629–35. http://dx.doi.org/10.1063/1.343095.
Hattori, Takeo, Hiroshi Nohira, and Kensuke Takahashi. "The initial growth steps of ultrathin gate oxides." Microelectronic Engineering 48, no. 1-4 (September 1999): 17–24. http://dx.doi.org/10.1016/s0167-9317(99)00329-9.
Contaret, T., G. Ghibaudo, A. Ferron, and F. Bœuf. "Excess drain noise simulation in ultrathin oxides MOSFETs." Journal of Computational Electronics 5, no. 2-3 (July 2006): 187–92. http://dx.doi.org/10.1007/s10825-006-8842-1.
Zander, D., F. Saigne, C. Petit, and A. Meinertzhagen. "Electrical stress effects on ultrathin (2.3 nm) oxides." Journal of Non-Crystalline Solids 280, no. 1-3 (February 2001): 86–91. http://dx.doi.org/10.1016/s0022-3093(00)00393-8.
Chang, Chun-Yen, Chi-Chun Chen, Horng-Chih Lin, Mong-Song Liang, Chao-Hsin Chien, and Tiao-Yuan Huang. "Reliability of ultrathin gate oxides for ULSI devices." Microelectronics Reliability 39, no. 5 (May 1999): 553–66. http://dx.doi.org/10.1016/s0026-2714(99)00037-2.
Giustino, Feliciano, and Alfredo Pasquarello. "Infrared properties of ultrathin oxides on Si(100)." Microelectronic Engineering 80 (June 2005): 420–23. http://dx.doi.org/10.1016/j.mee.2005.04.025.
Zhang, Xinyu, Yongwei Wang, Fenghua Cheng, Zhiping Zheng, and Yaping Du. "Ultrathin lanthanide oxides nanomaterials: synthesis, properties and applications." Science Bulletin 61, no. 18 (September 2016): 1422–34. http://dx.doi.org/10.1007/s11434-016-1155-2.
Vereecke, G., E. Röhr, R. J. Carter, T. Conard, H. De Witte, and M. M. Heyns. "Investigation of fluorine in dry ultrathin silicon oxides." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2108. http://dx.doi.org/10.1116/1.1414050.
Cellere, G., L. Larcher, M. G. Valentini, and A. Paccagnella. "Micro breakdown in small-area ultrathin gate oxides." IEEE Transactions on Electron Devices 49, no. 8 (August 2002): 1367–74. http://dx.doi.org/10.1109/ted.2002.801443.
Lundgren, P., M. O. Andersson, K. R. Farmer, and O. Engström. "Electrical instability of ultrathin thermal oxides on silicon." Microelectronic Engineering 28, no. 1-4 (June 1995): 67–70. http://dx.doi.org/10.1016/0167-9317(95)00017-3.
Wu, E. Y., D. L. Harmon, and Liang-Kai Han. "Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides." IEEE Electron Device Letters 21, no. 7 (July 2000): 362–64. http://dx.doi.org/10.1109/55.847381.
Chen, Ming-Jer, Ting-Kuo Kang, Chuan-Hsi Liu, Yih J. Chang, and Kuan-Yu Fu. "Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides." Applied Physics Letters 77, no. 4 (July 24, 2000): 555–57. http://dx.doi.org/10.1063/1.127042.
Bruyère, S., F. Guyader, W. De Coster, E. Vincent, M. Saadeddine, N. Revil, and G. Ghibaudo. "Wet or dry ultrathin oxides: impact on gate oxide and device reliability." Microelectronics Reliability 40, no. 4-5 (April 2000): 691–95. http://dx.doi.org/10.1016/s0026-2714(99)00273-5.
Lin, M.-T., R. J. Jaccodine, and T. J. Delph. "Planar oxidation of strained silicon substrates." Journal of Materials Research 16, no. 3 (March 2001): 728–33. http://dx.doi.org/10.1557/jmr.2001.0112.
von Bardeleben, Hans Jürgen, J. L. Cantin, I. Vickridge, Yong Wei Song, S. Dhar, Leonard C. Feldman, John R. Williams, et al. "Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC." Materials Science Forum 483-485 (May 2005): 277–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.277.
SUÑE, JORDI, DAVID JIMENEZ, and ENRIQUE MIRANDA. "BREAKDOWN MODES AND BREAKDOWN STATISTICS OF ULTRATHIN SiO2 GATE OXIDES." International Journal of High Speed Electronics and Systems 11, no. 03 (September 2001): 789–848. http://dx.doi.org/10.1142/s0129156401001003.
Gao, Xinlong, Wenhui Shi, Pengchao Ruan, Jinxiu Feng, Dong Zheng, Linhai Yu, Min Xue, et al. "Ultrathin carbon boosted sodium storage performance in aqueous electrolyte." Functional Materials Letters 13, no. 05 (July 2020): 2030002. http://dx.doi.org/10.1142/s1793604720300029.
Istomin, A. V., and S. G. Kolyshev. "ELECTROSTATIC METHOD OF FORMING ULTRATHIN FIBERS OF REFRACTORY OXIDES." «Aviation Materials and Technologies», no. 2 (2019): 40–46. http://dx.doi.org/10.18577/2071-9140-2019-0-2-40-46.
Vereecke, Guy, Erika Röhr, R. J. Carter, Thierry Conard, H. De Witte, and Marc M. Heyns. "The Origins of Fluorine in Dry Ultrathin Silicon Oxides." Solid State Phenomena 76-77 (January 2001): 153–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.153.
Arienzo, Maurizio, Leonello Dori, and Thomas N. Szabo. "Effect of post‐oxidation anneal on ultrathin SiO2gate oxides." Applied Physics Letters 49, no. 16 (October 20, 1986): 1040–42. http://dx.doi.org/10.1063/1.97465.
Oellig, Eva M., E. G. Michel, M. C. Asensio, and R. Miranda. "Ultrathin gate oxides formed by catalytic oxidation of silicon." Applied Physics Letters 50, no. 23 (June 8, 1987): 1660–62. http://dx.doi.org/10.1063/1.97760.
Liao, Wei-Jian, Yi-Lin Yang, Shun-Cheng Chuang, and Jenn-Gwo Hwu. "Growth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides." Journal of The Electrochemical Society 151, no. 9 (2004): G549. http://dx.doi.org/10.1149/1.1783907.
Fair, Richard B. "Physical Models of Boron Diffusion in Ultrathin Gate Oxides." Journal of The Electrochemical Society 144, no. 2 (February 1, 1997): 708–17. http://dx.doi.org/10.1149/1.1837473.
Thompson, W. Howard, Zain Yamani, Laila AbuHassan, Osman Gurdal, and Munir Nayfeh. "The effect of ultrathin oxides on luminescent silicon nanocrystallites." Applied Physics Letters 73, no. 6 (August 10, 1998): 841–43. http://dx.doi.org/10.1063/1.122019.
Madsen, Jon M., Zhenjiang Cui, and Christos G. Takoudis. "Low temperature oxidation of SiGe in ozone: Ultrathin oxides." Journal of Applied Physics 87, no. 4 (February 15, 2000): 2046–51. http://dx.doi.org/10.1063/1.372134.
Mukhopadhyay, M., S. K. Ray, D. K. Nayak, and C. K. Maiti. "Ultrathin oxides using N2O on strained Si1−xGex layers." Applied Physics Letters 68, no. 9 (February 26, 1996): 1262–64. http://dx.doi.org/10.1063/1.115946.
Pennetta, C., L. Reggiani, and Gy Trefán. "A percolative model of soft breakdown in ultrathin oxides." Physica B: Condensed Matter 314, no. 1-4 (March 2002): 400–403. http://dx.doi.org/10.1016/s0921-4526(01)01408-9.
Beck, Romuald B. "Formation of ultrathin silicon oxides—modeling and technological constraints." Materials Science in Semiconductor Processing 6, no. 1-3 (February 2003): 49–57. http://dx.doi.org/10.1016/s1369-8001(03)00071-4.